CN108649124A - A kind of inorganic perovskite solar cell of high efficiency and preparation method thereof - Google Patents
A kind of inorganic perovskite solar cell of high efficiency and preparation method thereof Download PDFInfo
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- CN108649124A CN108649124A CN201810502973.3A CN201810502973A CN108649124A CN 108649124 A CN108649124 A CN 108649124A CN 201810502973 A CN201810502973 A CN 201810502973A CN 108649124 A CN108649124 A CN 108649124A
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Abstract
The invention discloses one step solwution methods of one kind preparing inorganic perovskite solar cell of efficient plane hetero-junctions and preparation method thereof, and perovskite solar cell includes substrate, electron transfer layer, five part of perovskite material light absorbing layer, hole transmission layer and electrode.The preparation method of the present invention, includes the following steps：Substrate prepares and cleaning, processing；Stannic oxide electron transfer layer is prepared using spin coating mode；Prepare perovskite material precursor solution；Perovskite material film is prepared using spin-coating method or knife coating or print process and sudden strain of a muscle annealing process, obtains high quality perovskite material light absorbing layer；Prepare 2,2', tetra- [N of 7,7', N bis- (4 methoxyphenyl) amino] 9,9' spiral shells two fluorenes solution and on perovskite light absorbing layer deposition prepare 2,2', 7, two fluorenes hole transmission layer of 7' tetra- [N, N bis- (4 methoxyphenyl) amino] 9,9' spiral shells；Electrode is prepared using vapor deposition.The product of the present invention has many advantages, such as that thermal stability is high, simple for process, high efficiency, with important application prospects.
Description
Technical field
The invention belongs to field of photoelectric devices, and in particular to a step solwution method prepares efficient inorganic planar heterojunction
CsPbI2Br perovskite solar cells and preparation method thereof
Background technology
In existing various new energy technologies, photovoltaic generation is undoubtedly one of the direction of most foreground.Solar cell
It is the photoelectric device for referring to convert solar energy into electric energy.Currently, traditional solar cell mainly uses inorganic material system
It is standby, such as monocrystalline silicon, GaAs, copper indium gallium selenide.But for cost and efficiency, the pollution in manufacturing process and energy consumption are asked in addition
Topic affects its further development, therefore the novel solar cell of research and development high efficiency, low cost is just particularly important.
Recent years, metal halide perovskite semi-conducting material is because its light absorpting ability is strong, defect state density is low, current-carrying
The advantages that transport factor is high, carrier lifetime is long is very suitable for being applied to field of photovoltaic power generation, so as to cause the extensive of people
Concern.It is introduced in dye-sensitized solar cells from first time in 2009, and obtains 3.8% energy conversion efficiency, research
Temperature is continuously increased.Up to the present, the highest energy transfer efficiency of perovskite solar cell has been up to 22.1%.However
The organic inorganic hybridization perovskite material most studied extensively has significant thermal instability, so as to cause perovskite material point
Solution.Therefore, with the organic component in inorganic substitution perovskite structure, it is the basic solution for solving thermal instability, such as uses
Cs replaces A.As the substitute of hybrid inorganic-organic perovskite photoactive layer, halogen leaded caesium perovskite shows excellent
Thermal stability.Wherein CsPbI2Br is a kind of stabilization and efficient light conversion material, it has suitable band gap 1.91eV, can
Most of visible light is absorbed, is suitble to solar energy conversion, there are outstanding Photovoltaic Properties.
The present invention uses a step solwution method, successfully prepares the halogen leaded caesium perovskite thin film of smooth densification, obtains excellent
Different thermal stability, and it is prepared for efficient planar heterojunction solar cell as active layer, it is perovskite solar cell
Commercialization provides important references.
Invention content
The technical problem to be solved by the invention is to provide a kind of simple methods of technical process to prepare high quality halogen leaded
Caesium perovskite thin film, and the method that searching prepares high-performance plane hetero-junctions perovskite solar cell.
In order to solve the above technical problems, technical solution proposed by the present invention, which is a step solwution method, prepares high quality halogen leaded caesium
Perovskite thin film, and planar heterojunction high performance calcium titanium ore solar cell is prepared based on this, the solar cell includes
Substrate, hole transmission layer, five part of perovskite material light absorbing layer, electron transfer layer and electrode.
Above-mentioned planar heterojunction high performance calcium titanium ore solar cell, the substrate are indium tin oxide target (ITO).
Above-mentioned planar heterojunction high performance calcium titanium ore solar cell, the electron transfer layer are stannic oxide.
Above-mentioned planar heterojunction high performance calcium titanium ore solar cell, the perovskite material are CsPbIxBr3-x。
Above-mentioned planar heterojunction high performance calcium titanium ore solar cell, the hole transmission layer are 2,2', 7,7'- tetra-
Two fluorenes of [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells.
Above-mentioned planar heterojunction high performance calcium titanium ore solar cell, the electrode layer are silver.
, thermal stability simple for preparation process be good and high performance planar heterojunction CsPbI2Br perovskite solar-electricities
The technical solution of pond problem encountered, aforementioned present invention proposes one kind with CsPbI2Br perovskite materials be light absorbing layer,
2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells, two fluorenes are hole transmission layer, and stannic oxide is electricity
The solar battery structure of sub- transport layer is based particularly on following thinking and research experience：Perovskite material is outstanding light
Absorbing material absorbs preferable optical absorption characteristics in ultraviolet, visible light, near infrared region, can be good at using the sun
It can field of batteries.However the organic inorganic hybridization perovskite material most studied extensively has significant thermal instability, to lead
Perovskite material is caused to decompose.As the substitute of hybrid inorganic-organic perovskite photoactive layer, halogen leaded caesium perovskite is shown
Excellent thermal stability.However, it is contemplated that the factors such as band gap and phase stability, the photovoltaic device based on purely inorganic perovskite
Manufacture is still challenging.And CsPbI2Br perovskites have the suitable band gap of 1.91eV, can absorb most of visible
Light is suitble to solar energy conversion, has outstanding Photovoltaic Properties.We select the simple step solwution method of technical process or blade coating
Or print to prepare the perovskite thin film of high quality, and by selecting suitable electron hole transport layer, prepare efficient
Planar heterojunction solar cell, the final specific implementation for the present invention provide premise and basis.
The technical concept total as one, present invention generally provides one kind being based on CsPbI2Br perovskites are the height of active layer
Performance planar heterojunction solar cell preparation method, includes the following steps：
(1) substrate prepares and cleaning, processing；
(2) stannic oxide electron transfer layer is prepared based on solution film formation；
(3) inorganic perovskite material precursor solution is prepared；
(4) inorganic perovskite material film is prepared by a step solwution method spin coating or blade coating or printing, then through dodging at annealing
Reason, obtains high quality perovskite material light absorbing layer；
(5) hole transmission layer is prepared based on solution film formation；
(6) top electrode is prepared.
Above-mentioned preparation method, in the step (1), substrate prepare with cleaning, handle refer to by substrate using acetone, wash
Wash agent/deionized water, deionized water, isopropanol to be respectively cleaned by ultrasonic 20 minutes, then be dried up using nitrogen, finally again it is ultraviolet-
Ozone treatment 20 minutes.Organic matter, the impurity etc. that substrate surface can be effectively removed by above-mentioned cleaning step, so as to improve boundary
Face contacts, while being conducive to prepare high quality perovskite thin film；It is dried up using nitrogen, the main solid for removing substrate surface attachment
Particle；In addition, handling substrate by UV-ozone, ITO work functions can be improved, while improving stannic oxide solution in substrate table
The wellability in face is conducive to the preparation of stannic oxide electron transfer layer.
Above-mentioned preparation method, in the step (2), the stannic oxide electron transfer layer for preparing refers to, using spin coating
Mode prepare stannic oxide electron transfer layer.Spin coating proceeding is：With spin coating 30s under the rotating speed of 3000rpm.Wet film after spin coating
It is made annealing treatment 15 minutes at a temperature of 150 degree.
Above-mentioned preparation method, in the step (3), perovskite material precursor solution is by CsBr:PbI2By mole
Than 1:After 1 weighs, it is dissolved in the mixing (volume ratio 4 of N-N dimethylformamides and dimethyl sulfoxide (DMSO):1) in solution, formation rubs
The perovskite solution of your a concentration of 0.5mol/L, 12 hours of heating stirring at a temperature of 60-70 degree.Using said ratio, and
By the means such as heating, stirring, material can be made fully to dissolve, to ensure the proportioning of film each component, wet film be made subsequently to move back
It fully can react to form perovskite in fire ring section, to reduce the PbI of remaining2。
In the step (4), electron-transport is being deposited by spin coating or blade coating or printing technology for above-mentioned preparation method
Inorganic perovskite material film layers are prepared on the sample of layer, then annealing is dodged between 220 degrees Celsius to 250 degrees Celsius and arrives for 8 seconds
20 seconds, light absorbing layer of continuous, the fine and close, thickness between 200 nanometers to 350 nanometers can be formed.
Above-mentioned preparation method, in the step (5), the hole material is 2,2', 7,7'- tetra- [(the 4- methoxies of N, N- bis-
Base phenyl) amino] -9,9'- spiral shells, two fluorenes, it is dissolved in chlorobenzene, forms the solution of a concentration of 90mg/ml, and add 45ul bis-
(trimethyl fluoride sulfonyl) lithium solution (solvent is acetonitrile, a concentration of 170mg/ml) and 10ul tributyl phosphates, stirring at normal temperature 12
Hour, using spin coating mode, deposition prepares hole transmission layer on perovskite light absorbing layer, with spin coating under the rotating speed of 3000rpm
30s。
Above-mentioned preparation method, it is described electrode is prepared using vapor deposition to refer in the step (6), by the way of vapor deposition,
Deposition forms the silver electrode of 100nm.
Compared with the prior art, the advantages of the present invention are as follows：
1. the present invention prepares CsPbI2Br perovskite thin film preparation methods are simple for process, utilize spin coating or blade coating or printing skill
Art, and propose to dodge annealing process i.e. 220 degree Celsius to dodging annealing 8 seconds to 20 seconds between 250 degrees Celsius, you can it has prepared high-quality
The perovskite thin film of amount.
2. using stannic oxide/CsPbI simultaneously2Br perovskites/2,2', [N, N- bis- (4- methoxyphenyls) ammonia of 7,7'- tetra-
Base] -9,9'- spiral shells, two fluorenes structure, prepared high performance perovskite planar heterojunction solar cell.For that will aoxidize for the first time
Tin electron transfer layer is applied in the inorganic perovskite solar cell of halogen leaded caesium.
It is prepared based on CsPbI in general, it is proposed that a kind of2The high efficiency planar heterojunction sun of Br perovskites
Battery methods simplify the technique for preparing halogen leaded caesium perovskite solar cell, practical to improving perovskite solar cell
It is of great significance.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
【Fig. 1】Based on CsPbI2The planar heterojunction solar battery structure schematic diagram of Br perovskite active layers.
【Fig. 2】Dodge the scanning electron microscope shape appearance figure on perovskite thin film surface prepared by annealing.
【Fig. 3】Dodge the X-ray diffraction spectrum of perovskite thin film prepared by annealing.
【Fig. 4】Dodge the uv-visible absorption spectroscopy of perovskite thin film prepared by annealing.
【Fig. 5】CsPbI is prepared based on spin-coating method2Br perovskite active layers, cavitation layer are Spiro-OMeTAD's or NiOx
The current -voltage curve of planar heterojunction solar cell；CsPbI is prepared based on knife coating2The plane of Br calcium titanium ore beds is heterogeneous
The current -voltage curve of joint solar cell.
【Fig. 6】Based on CsPbI2The energy conversion efficiency of the planar heterojunction solar cell of Br perovskite active layers counts
Distribution map.
Specific implementation mode
To facilitate the understanding of the present invention, below in conjunction with Figure of description and embodiment to the present invention make more comprehensively, it is careful
Ground describes, but the protection scope of the present invention is not limited to the following specific embodiments.
Unless otherwise defined, all technical terms used hereinafter and the normally understood meaning of those skilled in the art
It is identical.Technical term used herein is intended merely to the purpose of description specific embodiment, is not intended to the limitation present invention
Protection domain.
Unless otherwise specified, various raw material, reagent, the instrument and equipment etc. used in the present invention can pass through city
Field is commercially available or can be prepared by existing method.
Embodiment 1：
The battery structure of this embodiment such as Fig. 1, including substrate, electron transfer layer, perovskite material light absorbing layer, hole
Five part of transport layer and electrode, perovskite material light absorbing layer thickness about 200nm.Its hole-transporting layer is Spiro-
OMeTAD。
Preparation method in the present embodiment in indium tin oxide target (ITO) substrate includes the following steps：
(1) acetone, detergent/deionized water, deionized water, isopropanol is used to divide indium tin oxide target (ITO) substrate of glass
Chao Shengqingxi not be 20 minutes, it is then dried up using nitrogen, then UV-ozone is handled 20 minutes again.
(2) stannic oxide solution takes out from refrigerating chamber, stirs 20min at room temperature, through 0.45ul organic system filtering head mistakes
Filter.Substrate is placed, filtered stannic oxide solution is instilled, rotating technics are to accelerate to 3000rpm in 3 seconds, keep 30
Second.Wet film after spin coating makes annealing treatment 15 minutes at a temperature of 150 degree.
(3) by CsBr:PbI2In molar ratio 1:After 1 weighs, it is dissolved in the mixing of N-N dimethylformamides and dimethyl sulfoxide (DMSO)
(volume ratio 4:1) in solvent, finally heated stirring, wherein heating temperature are 65 degree, and mixing time is 12 hours, is obtained
The CsPbI of 0.5mol/L2Br precursor solutions.
(4) in glove box light absorbing layer is prepared with a step solwution method.Sample is placed on spin coating instrument, is instilled
CsPbI2Br precursor solutions.Rotating technics are to accelerate to 2000rpm in 6 seconds to be kept for 30 seconds.After spin coating, wet film is existed
Under 240 degree, anneal 10 seconds.Annealing terminates and waits the perovskite thin film for obtaining high quality after cooling.Perovskite thin film surface
Scanning electron microscope shape appearance figure as shown in Fig. 2, perovskite thin film X-ray diffraction spectrum as shown in figure 3, perovskite thin film purple
Outside-visible absorption spectrum is as shown in Figure 4.
(5) 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells, two fluorenes are dissolved in chlorobenzene, shape
At the solution of a concentration of 90mg/ml, and adds (trimethyl fluoride sulfonyl) lithiums of 45ul bis- solution (solvent is acetonitrile, a concentration of
170mg/ml) and 10ul tributyl phosphates, 12 hours of stirring at normal temperature.It is sunk on perovskite light absorbing layer using spin coating mode
Product prepares hole transmission layer.There is the substrate of light absorbing layer to place deposition, instills 2,2', 7,7'- tetra- [(the 4- methoxies of N, N- bis-
Base phenyl) amino] two fluorenes solution of -9,9'- spiral shells, spin coating proceeding is that 3000rpm is accelerated in 6 seconds, is kept for 30 seconds.
(6) silver electrode is prepared using vapor deposition, deposition forms the silver electrode of 100nm.
It is prepared through the above steps based on CsPbI2Br perovskite active layers, using Spiro-OMeTAD as hole transport
The planar heterojunction solar cell of layer, current -voltage curve is as shown in figure 5, energy conversion efficiency statistical Butut such as Fig. 6
It is shown.
By the present embodiment made from the above method based on CsPbI2The planar heterojunction sun of Br perovskite active layers
Energy battery, reaches 13.09% energy conversion efficiency, reaches target.It is above-mentioned to be based on CsPbI2Br perovskite active layers
Planar heterojunction solar cell specific performance is as shown in the table：
Embodiment 2：
The battery structure of this embodiment includes substrate, electron transfer layer, perovskite material light absorbing layer, hole transmission layer
And five part of electrode, perovskite material light absorbing layer thickness about 200nm.Its hole-transporting layer is NiOx.
Preparation method in the present embodiment in indium tin oxide target (ITO) substrate includes the following steps：
(1) acetone, detergent/deionized water, deionized water, isopropanol is used to divide indium tin oxide target (ITO) substrate of glass
Chao Shengqingxi not be 20 minutes, it is then dried up using nitrogen, then UV-ozone is handled 20 minutes again.
(2) NiOx solution stirs 1h at 90 degree, is filtered through filtering head.Substrate is placed, filtered nickel oxide is instilled
Solution, rotating technics are that 3000rpm is accelerated in 3 seconds, are kept for 30 seconds.Wet film after spin coating makes annealing treatment at a temperature of 300 degree
30 minutes.
(3) by CsBr:PbI2In molar ratio 1:After 1 weighs, it is dissolved in the mixing of N-N dimethylformamides and dimethyl sulfoxide (DMSO)
(volume ratio 4:1) in solvent, finally heated stirring, wherein heating temperature are 65 degree, and mixing time is 12 hours, is obtained
The CsPbI of 0.5mol/L2Br precursor solutions.
(4) in glove box light absorbing layer is prepared with a step solwution method.Sample is placed on spin coating instrument, is instilled
CsPbI2Br precursor solutions.Rotating technics are to accelerate to 2000rpm in 6 seconds to be kept for 30 seconds.After spin coating, wet film is existed
Under 240 degree, anneal 10 seconds.Annealing terminates and waits the perovskite thin film for obtaining high quality after cooling.
(5) PCBM is dissolved in chlorobenzene, forms the solution of a concentration of 15mg/ml, 12 hours of 50 degree of heating stirrings.It uses
Spin coating mode deposits preparation on perovskite light absorbing layer.There is the substrate of light absorbing layer to place deposition, it is molten to instill PCBM
Liquid, spin coating proceeding are that 3000rpm is accelerated in 6 seconds, are kept for 30 seconds.
(6) silver electrode is prepared using vapor deposition, deposition forms the silver electrode of 100nm.
It is prepared through the above steps based on CsPbI2Br perovskite active layers, using NiOx as the plane of hole transmission layer
Heterojunction solar battery, current -voltage curve as shown in figure 5,
Embodiment 3：
The battery structure of this embodiment includes substrate, electron transfer layer, perovskite material light absorbing layer, hole transmission layer
And five part of electrode.Wherein perovskite material light absorbing layer is prepared for knife coating.
Preparation method in the present embodiment in indium tin oxide target (ITO) substrate includes the following steps：
(1) acetone, detergent/deionized water, deionized water, isopropanol is used to divide indium tin oxide target (ITO) substrate of glass
Chao Shengqingxi not be 20 minutes, it is then dried up using nitrogen, then UV-ozone is handled 20 minutes again.
(2) stannic oxide solution takes out from refrigerating chamber, stirs 20min at room temperature, through 0.45ul organic system filtering head mistakes
Filter.Substrate is placed, filtered stannic oxide solution is instilled, rotating technics are to accelerate to 3000rpm in 3 seconds, keep 30
Second.Wet film after spin coating makes annealing treatment 15 minutes at a temperature of 150 degree.
(3) by CsBr:PbI2In molar ratio 1:After 1 weighs, it is dissolved in the mixing of N-N dimethylformamides and dimethyl sulfoxide (DMSO)
(volume ratio 4:1) in solvent, finally heated stirring, wherein heating temperature are 65 degree, and mixing time is 12 hours, is obtained
The CsPbI of 0.5mol/L2Br precursor solutions.
(4) the perovskite precursor solution prepared is scratched to the substrate for having electron transfer layer to deposition with blade coating equipment
On, edge of a knife spacing is 150 microns, and coating speed is set as 15 ms/min, and coated substrate is placed in anneal in 240 degree of thermal station and do
Dry 1s forms active layer film.
(5) 2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells, two fluorenes are dissolved in chlorobenzene, shape
At the solution of a concentration of 90mg/ml, and adds (trimethyl fluoride sulfonyl) lithiums of 45ul bis- solution (solvent is acetonitrile, a concentration of
170mg/ml) and 10ul tributyl phosphates, 12 hours of stirring at normal temperature.It is sunk on perovskite light absorbing layer using spin coating mode
Product prepares hole transmission layer.There is the substrate of light absorbing layer to place deposition, instills 2,2', 7,7'- tetra- [(the 4- methoxies of N, N- bis-
Base phenyl) amino] two fluorenes solution of -9,9'- spiral shells, spin coating proceeding is that 3000rpm is accelerated in 6 seconds, is kept for 30 seconds.
(6) silver electrode is prepared using vapor deposition, deposition forms the silver electrode of 100nm.
By scratching CsPbI2Planar heterojunction solar cell prepared by Br perovskite active layers, current-voltage are bent
Line is as shown in Figure 5.
Claims (4)
1. a kind of inorganic perovskite solar cell of high efficiency and preparation method thereof, the solar cell is by hearth electrode, electronics
Transport layer, inorganic perovskite material light absorbing layer, hole transmission layer and five part of top electrode composition, wherein electron transfer layer and
It is different that inorganic perovskite material light absorbing layer and inorganic perovskite material light absorbing layer and hole transmission layer construct two planes
Matter knot, the electron transfer layer, inorganic perovskite material light absorbing layer, hole transmission layer are formed a film by solwution method；
The inorganic perovskite material is CsPbIxBr3-x, different according to solution manner of formulation, the value of x is between 1 to 3；
The electron transfer layer is stannic oxide, and thin film layer thickness is between 10 nanometers to 80 nanometers；
The hole transmission layer is nickel oxide or poly- [bis- (4- phenyl) (2,4,6- trimethylphenyls) amine] or 2,2', 7,7'- tetra-
[N, N- bis- (4- methoxyphenyls) amino] -9,9'- spiral shells, two fluorenes, hole transmission layer film thickness 10 nanometers to 100 nanometers it
Between.
2. a kind of preparation method of the inorganic perovskite solar cell of high efficiency, includes the following steps：
(1) substrate prepares and cleaning, processing；
(2) stannic oxide electron transfer layer is prepared based on solution film formation；
(3) inorganic perovskite material precursor solution is prepared；
(4) inorganic perovskite material film is prepared by a step solwution method spin coating or blade coating or printing, then is made annealing treatment through dodging, obtained
To high quality perovskite material light absorbing layer；
(5) hole transmission layer is prepared based on solution film formation；
(6) top electrode is prepared.
3. a kind of preparation method of the inorganic perovskite solar cell of high efficiency according to claim 2, which is characterized in that institute
It states in step (3), the perovskite material precursor solution is by CsBr and PbI2After being weighed by certain molar ratio, it is dissolved in N-
Mixing (the volume ratio 4 of N-dimethylformamide and dimethyl sulfoxide (DMSO):1) in solution, the nothing that molar concentration is 0.5mol/L is formed
Machine perovskite solution, 12 hours of heating stirring under 60 degrees Celsius to 70 degree celsius temperatures.
4. a kind of preparation method of the inorganic perovskite solar cell of high efficiency according to claim 2, which is characterized in that institute
It states in step (4), inorganic perovskite is prepared on the sample for deposited electron transfer layer by spin coating or blade coating or printing technology
Then material film layers dodge annealing 8 seconds to 20 seconds between 220 degrees Celsius to 250 degrees Celsius, can be formed continuous, fine and close, thick
Spend the light absorbing layer between 200 nanometers to 350 nanometers.
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| CN109473554A (en) * | 2018-11-16 | 2019-03-15 | 常州大学 | A kind of full-inorganic perovskite solar cell and preparation method thereof |
| CN110112258A (en) * | 2019-05-23 | 2019-08-09 | 电子科技大学 | Perovskite solar battery and its manufacturing method |
| CN110504363A (en) * | 2019-07-31 | 2019-11-26 | 浙江天地环保科技有限公司 | A kind of full-inorganic perovskite preparation method of solar battery |
| CN111653672A (en) * | 2020-06-15 | 2020-09-11 | 安徽大学 | Lattice-matched heterojunction composite film, preparation method and perovskite solar cell |
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| CN107104190A (en) * | 2017-06-23 | 2017-08-29 | 中南大学 | A kind of flexible perovskite solar cell and preparation method thereof |
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| CN110112258A (en) * | 2019-05-23 | 2019-08-09 | 电子科技大学 | Perovskite solar battery and its manufacturing method |
| CN110504363A (en) * | 2019-07-31 | 2019-11-26 | 浙江天地环保科技有限公司 | A kind of full-inorganic perovskite preparation method of solar battery |
| CN111653672A (en) * | 2020-06-15 | 2020-09-11 | 安徽大学 | Lattice-matched heterojunction composite film, preparation method and perovskite solar cell |
| CN111653672B (en) * | 2020-06-15 | 2022-07-01 | 安徽大学 | Lattice-matched heterojunction composite film, preparation method and perovskite solar cell |
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