CN105810831B - A kind of slicker solder mixing perovskite thin film, preparation method and application - Google Patents
A kind of slicker solder mixing perovskite thin film, preparation method and application Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 238000002156 mixing Methods 0.000 title claims abstract description 48
- 241000500881 Lepisma Species 0.000 title claims abstract description 39
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000012046 mixed solvent Substances 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 50
- 239000000843 powder Substances 0.000 claims description 30
- 238000003756 stirring Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 13
- 239000007791 liquid phase Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 229910001385 heavy metal Inorganic materials 0.000 abstract description 2
- 229910052718 tin Inorganic materials 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- JTDNNCYXCFHBGG-UHFFFAOYSA-L Tin(II) iodide Inorganic materials I[Sn]I JTDNNCYXCFHBGG-UHFFFAOYSA-L 0.000 description 5
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 4
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- CHSZQIWZTLYFNU-UHFFFAOYSA-N [Ti].[Ca].[Sn] Chemical compound [Ti].[Ca].[Sn] CHSZQIWZTLYFNU-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The present invention provides a kind of slicker solder mixing perovskite thin film, preparation method and applications.The preparation method of slicker solder mixing perovskite thin film is specifically in the present invention：By PbRE2And SnRE2It is dissolved separately in the in the mixed solvent of DMF and DMSO, is respectively formed PbRE2Solution and SnRE2Solution；RE is Cl, Br or I；Measure PbRE2Solution and SnRE2Solution, and the two is made to mix, form precursor liquid；Precursor liquid is spun on substrate；The spin coating CH on substrate again3NH3The aqueous isopropanol of RE, up to slicker solder mixing perovskite thin film after annealing.The present invention prepares slicker solder mixing perovskite thin film using liquid phase two-step method, the content of heavy metal lead in film can not only be efficiently reduced, and the coverage and quality of film can be improved, reduce the pin hole of film, leakage path is reduced, the photoelectric conversion efficiency of slicker solder mixing perovskite solar cell is improved.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically a kind of slicker solder mixing perovskite thin film, its preparation
Method and application.
Background technology
Solar energy can be directly changed into electric energy by solar cell, since solar energy is inexhaustible clear
The clean energy, therefore solar cell is that the mankind cope with energy crisis, seeks the important countermeasure of sustainable development.Currently, crystalline silicon
Solar cell occupies 89% photovoltaic market share.However, expensive raw material and its cumbersome battery process limit crystal
The long term growth of silicon solar cell.In past ten years, thin-film solar cells includes silica-base film, Cu (In, Ga)
Se2-xSxAnd CdTe battery etc. also begins to realize extensive industrialization.As the outstanding representative of third generation solar cell, calcium
Titanium ore solar cell is that a kind of one kind generating light induced electron and hole pair with organic-inorganic perovskite material is novel all solid state
Organic metal halide thin-film solar cells.Perovskite solar cell has energy conversion efficiency high, and carrier diffusion is long
The advantages that degree is long, mobility is high, and core photoelectric conversion material is cheap and easy to get.
Currently, perovskite material used in perovskite solar cell is mainly lead iodide methylamine（CH3NH3PbI3）,
Its band gap is about 1.5 eV, and extinction coefficient is high, and hundreds of nanometers of thick films can fully absorb 800 nm sunlights below.
CH3NH3PbI3Generally use liquid phase one-step method is completed in the preparation, i.e.,：By PbI2With CH3NH3I is mixed with certain molar ratio
It closes, is then dissolved in n,N-Dimethylformamide（DMF）In solution, it is spun on until completely dissolved in corresponding substrate, later
Film is heat-treated and forms CH3NH3PbI3Perovskite thin film.But a large amount of the results show, liquid phase one-step method
The perovskite thin film of preparation is extremely difficult to higher coverage, and film surface has very high roughness, this results in leaking
Electric and compound increase, to have an adverse effect to photovoltaic performance.
Invention content
An object of the present invention is just to provide a kind of slicker solder mixing perovskite thin film, slicker solder mixing perovskite thin film tool
There is higher quality, can be used to the perovskite solar cell for preparing efficient stable.
The second object of the present invention is just to provide a kind of preparation method of slicker solder mixing perovskite thin film, and this method passes through liquid
Phase two-step method is completed, and prepared film has high coverage and quality compared to the film prepared by liquid phase one-step method.
The third object of the present invention is just to provide a kind of application of above-mentioned slicker solder mixing perovskite thin film, i.e.,：It provides a kind of
Perovskite solar cell applies above-mentioned slicker solder mixing perovskite thin film in the perovskite solar cell.
What an object of the present invention was realized in：A kind of slicker solder mixing perovskite thin film, the slicker solder calcium mixture titanium
The chemical general formula of mine film is CH3NH3Pb1-xSnxRE3；Wherein, RE Cl, Br or I；0≤x≤1.
Slicker solder mixing perovskite thin film provided by the present invention, on the one hand by tin instead of part lead so that perovskite is thin
The content of heavy metal lead reduces in film, and on the other hand the slicker solder mixing perovskite thin film is completed by liquid phase two-step method, finally
Being formed by film has high coverage and quality, disclosure satisfy that perovskite solar cell to perovskite thin film high quality
It is required that.
The second object of the present invention is to what is be achieved：A kind of preparation method of slicker solder mixing perovskite thin film, including such as
Lower step：
A, PbRE is weighed2Powder and SnRE2Powder；Wherein, RE Cl, Br or I；
B, dimethylformamide and dimethyl sulfoxide (DMSO) are measured, and the two is made to be mixed to form mixed solvent, later by institute's shape
At mixed solvent be divided into two parts；
C, the PbRE that will be weighed2Powder is dissolved in a copy of it in the mixed solvent, forms PbRE2Solution；By what is weighed
SnRE2Powder is dissolved in another in the mixed solvent, forms SnRE2Solution；
D, PbRE is measured2Solution and SnRE2Solution, and make the two mixing, stir evenly, form precursor liquid；
E, the precursor liquid in step d is spun on substrate；
F, the spin coating CH on substrate again3NH3The aqueous isopropanol of RE, after annealing to get slicker solder mixing perovskite thin film
CH3NH3Pb1-xSnxRE3。
Annealing process in step f is：Anneal 20min ~ 30min at 110 DEG C ~ 160 DEG C.
Rotating speed in step e and step f in spin coating solution on substrate is 4000r/min ~ 6000r/min.
In step c, by PbRE2Powder and SnRE2When powder is dissolved separately in the mixed solvent, solution temperature is 60 DEG C ~ 70
℃。
The preparation method of slicker solder mixing perovskite thin film provided by the present invention belongs to liquid phase two-step method, i.e.,：First with two
Methyl sulfoxide（DMSO）And dimethylformamide（DMF）As mixed solvent, make PbRE2Powder and SnRE2Powder（RE can be
Cl, Br or I）It is dissolved in the mixed solvent respectively, forms PbRE2Solution and SnRE2Solution, then make PbRE2Solution and SnRE2It is molten
Liquid mixes, as the precursor liquid for preparing slicker solder mixing perovskite thin film in two-step method.Due to the boiling point of DMSO（189℃）Compared with DMF
Boiling point（152℃）It is 37 DEG C high, therefore on substrate after the complete precursor liquid of spin coating, in solvent evaporation process, DMF prior to DMSO and
Evaporation leads to the DMSO and solute PbRE in film2And SnRE2Transition object PbRE is generated respectively2(DMSO) and SnRE2
(DMSO), the basic structure of both transition objects is PbRE2And SnRE2Atom outer wrapping one layer of DMSO molecule.It is revolved in second step
Apply CH3NH3When the aqueous isopropanol of RE, CH3NH3RE replaces the position of DMSO and and PbRE2And SnRE2Reaction generates
CH3NH3PbRE3And CH3NH3SnRE3, and Pb and Sn can replace mutually in the position of perovskite intramolecular, therefore the production ultimately generated
Object perovskite thin film is CH3NH3Pb1-xSnxRE3。
High boiling solvent dimethyl sulfoxide (DMSO) in the present invention（DMSO）Introducing buffering is played for the formation of perovskite thin film
The effect of agent.DMSO and SnRE2Form middle transition object, SnRE2Under the package of DMSO, SnRE can be both buffered2With
CH3NH3The vigorous reaction of RE, and isopropanol can be slowed down（IPA）To CH3NH3SnRE3Dissolving, to finally realize prepare it is high
The slicker solder mixing perovskite thin film CH of quality3NH3Pb1-xSnxRE3。
What the third object of the present invention was realized in：A kind of perovskite solar cell, the perovskite solar-electricity
Perovskite thin film in pond is slicker solder mixing perovskite thin film；The chemical general formula of the slicker solder mixing perovskite thin film is
CH3NH3Pb1-xSnxRE3；Wherein, RE Cl, Br or I；0≤x≤1.
The present invention prepares slicker solder mixing perovskite thin film using liquid phase two-step method can not only efficiently reduce weight in film
The content of metallic lead, and the coverage and quality of film can be improved, the pin hole of film is reduced, leakage path is reduced, is increased
The parallel resistance of device, the final photoelectric conversion efficiency for improving perovskite solar cell.
Description of the drawings
Fig. 1 is the different XRD diagram for mixing the perovskite thin film under tin amount in the embodiment of the present invention.
Fig. 2 is the different SEM figures for mixing the perovskite thin film under tin amount in the embodiment of the present invention.
Fig. 3 is the different I-V curve figures for mixing the perovskite solar cell under tin amount in the embodiment of the present invention.
Specific implementation mode
The preparation method of slicker solder mixing perovskite thin film provided by the present invention, specifically comprises the following steps：
A, PbRE is weighed2Powder and SnRE2Powder；Wherein, RE Cl, Br or I.
B, dimethylformamide and dimethyl sulfoxide (DMSO) are measured, and the two is made to be mixed to form mixed solvent, later by institute's shape
At mixed solvent be divided into two parts.
C, the PbRE that will be weighed2Powder is dissolved in a copy of it in the mixed solvent, forms PbRE2's（DMF+DMSO）It is molten
Liquid；The SnRE that will be weighed2Powder is dissolved in another in the mixed solvent, forms SnRE2's（DMF+DMSO）Solution.When dissolving
The temperature of solution controls between 60 DEG C ~ 70 DEG C.
D, PbRE is measured2's（DMF+DMSO）Solution and SnRE2's（DMF+DMSO）Solution, and keep the two mixing, stirring equal
It is even, precursor liquid is formed, i.e.,：It is formed（PbRE2+SnRE2）'s（DMF+DMSO）Solution.
E, the precursor liquid in step d is spun on substrate, rotating speed when spin coating is 4000r/min ~ 6000r/min.
F, the spin coating on substrate again（Rotating speed is 4000r/min ~ 6000r/min）CH3NH3The aqueous isopropanol of RE, Zhi Hou
20min ~ 30min is annealed at 110 DEG C ~ 160 DEG C to get slicker solder mixing perovskite thin film CH3NH3Pb1-xSnxRE3, 0≤x≤1.
Slicker solder mixing perovskite thin film CH in the present invention3NH3Pb1-xSnxRE3It can be applied to just set the perovskite of structure
Solar cell can also be applied to the perovskite solar cell of inverted structure.
The perovskite solar cell of inverted structure is discussed in detail with reference to specific example（FTO/PEDOT:PSS/
CH3NH3Pb1-xSnxI3/PCBM/BCP/Ag）Preparation method.
The first step：The cleaning of electro-conductive glass.
By FTO electro-conductive glass（That is substrate）It is cut to specified size, in succession with ultrasound in deionized water, acetone, ethyl alcohol
Wave washer is cleaned by ultrasonic 10min respectively, uses N later2Drying, is put into oxygen plasma and handles 10min.
Second step：PEDOT:The preparation of PSS layer.
By PEDOT:PSS spin coatings liquid after filtering, is spun on substrate FTO, and thickness 50nm anneals at 140 DEG C
10min。
Third walks：CH3NH3Pb1-xSnxI3The preparation of layer.
1）The configuration of slicker solder mixing precursor liquid：
Weigh 170mg PbI2Powder and 138mg SnI2Powder；40 two parts of μ L DMSO are measured, 200 μ L DMF two are measured
Part；Make 200 μ L DMF mixing of 40 μ L DMSO of a copy of it and a copy of it, is formed a（40μL DMSO+200μL DMF）'s
Mixed solvent；Make another 40 μ L DMSO and another 200 μ L DMF mixing, forms another（40μL DMSO+200μL
DMF）Mixed solvent；By 170mg PbI2Powder is dissolved in a copy of it（40μL DMSO+200μL DMF）Mixed solvent
In, stirring to powder whole dissolves at 60 DEG C, forms PbI2Solution；By 138mg SnI2Powder is dissolved in another（40μL
DMSO+200μL DMF）In the mixed solvent, at 60 DEG C stirring to powder all dissolve, formed SnI2Solution.From SnI2Solution
It is middle to take y μ L SnI2Solution, from PbI2It is measured in solution（80-y）μL PbI2Solution, and the two is mixed, that is, make one
The precursor liquid of the slicker solder mixing of certainty ratio.
2）CH3NH3Pb1-xSnxI3The preparation of layer：
By above-mentioned precursor liquid with rotating speed it is that 5000r/min is spun in substrate, then by CH3NH3The aqueous isopropanol of I is to turn
Speed is that 5000r/min carries out spin coating, then removes to be positioned at 120 DEG C and carries out annealing 20min, that is, generates CH3NH3Pb1-xSnxI3
Layer.
4th step：PCBM layers of preparation.
PCBM powder is dissolved in a concentration of 20mg/mL in solvent chlorobenzene, then is spun on for 2000r/min with rotating speed
CH3NH3Pb1-xSnxI3In film layer.
5th step：BCP layers of preparation.
It weighs 20mg BCP powder to be put into crucible, under vacuum conditions with rate for 0.2/s deposition of thick on PCBM layers
Degree is the BCP layers of 6nm.
6th step：The preparation of Ag electrodes.
Filamentary silver is heated under vacuum to melt, evaporation thickness is 100nm.
Above-described embodiment is repeated, y=0,10,20,30,40,50,60,70 and 80 is taken respectively in the third step, is obtained nine
A perovskite solar cell.
Perovskite thin film CH in nine perovskite solar cells is tested respectively3NH3Pb1-xSnxI3XRD, acquired results
See Fig. 1.The curve of the top in Fig. 1（Curve indicated by Sn-80-sim, sim are the abbreviation of simulated）For computer institute
The lowermost curve in the XRD of the perovskite thin film of the pure tin of simulation, Fig. 1（Curve indicated by Sn-0-sim）For computer institute
The XRD of the perovskite thin film of the pure lead of simulation, as seen from Figure 1, pure lead perovskite thin film are tetragonal phase structure, and pure tin calcium titanium
Mine film is cube phase structure, and with the increase for mixing tin amount, there are one from tetragonal phase to cubic phase for slicker solder mixing perovskite thin film
Transition.
Perovskite thin film CH in nine perovskite solar cells is tested respectively3NH3Pb1-xSnxI3SEM, acquired results
See Fig. 2.As seen from Figure 2, with the increase for mixing tin amount, film can also keep extraordinary compactness, crystal grain arrangement fine and close, tight
It gathers.
The photovoltaic performance of nine perovskite solar cells is tested respectively, and acquired results are shown in Fig. 3.As seen from Figure 3, y=
When 10,13.75% efficiency is achieved, which is the highest transfer efficiency having been reported that at present.Its specific each perovskite is too
The I-V data of positive energy battery see the table below：
Claims (2)
1. a kind of slicker solder mixing perovskite thin film, characterized in that the chemical general formula of the slicker solder mixing perovskite thin film is
CH3NH3Pb1-xSnxRE3；Wherein, RE is Cl or Br；0 < x < 1；
The preparation method of the slicker solder mixing perovskite thin film, includes the following steps：
A, PbRE is weighed2Powder and SnRE2Powder；
B, dimethylformamide and dimethyl sulfoxide (DMSO) are measured, and the two is made to be mixed to form mixed solvent, will be formed by later
Mixed solvent is divided into two parts；
C, the PbRE that will be weighed2Powder is dissolved in a copy of it in the mixed solvent, forms PbRE2Solution；By what is weighed
SnRE2Powder is dissolved in another in the mixed solvent, forms SnRE2Solution；By PbRE2Powder and SnRE2Powder is dissolved separately in
When in the mixed solvent, solution temperature is 60 DEG C ~ 70 DEG C；
D, PbRE is measured2Solution and SnRE2Solution, and make the two mixing, stir evenly, form precursor liquid；
E, the precursor liquid in step d is spun on the rotating speed of 4000r/min ~ 6000r/min on substrate；
F, again on substrate with the rotating speed spin coating CH of 4000r/min ~ 6000r/min3NH3The aqueous isopropanol of RE, later 110
DEG C ~ 160 DEG C at annealing 20min ~ 30min to get slicker solder mixing perovskite thin film CH3NH3Pb1-xSnxRE3。
2. a kind of perovskite solar cell, characterized in that the perovskite thin film in the perovskite solar cell is slicker solder
Mix perovskite thin film；The chemical general formula of the slicker solder mixing perovskite thin film is CH3NH3Pb1-xSnxRE3；Wherein, RE Cl,
Or Br；0 < x < 1；
The preparation method of the slicker solder mixing perovskite thin film, includes the following steps：
A, PbRE is weighed2Powder and SnRE2Powder；
B, dimethylformamide and dimethyl sulfoxide (DMSO) are measured, and the two is made to be mixed to form mixed solvent, will be formed by later
Mixed solvent is divided into two parts；
C, the PbRE that will be weighed2Powder is dissolved in a copy of it in the mixed solvent, forms PbRE2Solution；By what is weighed
SnRE2Powder is dissolved in another in the mixed solvent, forms SnRE2Solution；
D, PbRE is measured2Solution and SnRE2Solution, and make the two mixing, stir evenly, form precursor liquid；
E, the precursor liquid in step d is spun on substrate；
F, the spin coating CH on substrate again3NH3The aqueous isopropanol of RE, after annealing to get slicker solder mixing perovskite thin film
CH3NH3Pb1-xSnxRE3。
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| CN110323337A (en) * | 2019-06-26 | 2019-10-11 | 广西大学 | A kind of slicker solder binary perovskite photodetector and preparation method thereof |
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