CN107342319A - 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 - Google Patents
一种复合应变Si/SiGe异质结双极晶体管及其制备方法 Download PDFInfo
- Publication number
- CN107342319A CN107342319A CN201710473915.8A CN201710473915A CN107342319A CN 107342319 A CN107342319 A CN 107342319A CN 201710473915 A CN201710473915 A CN 201710473915A CN 107342319 A CN107342319 A CN 107342319A
- Authority
- CN
- China
- Prior art keywords
- base
- substrate
- layer
- insulating barrier
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 18
- 239000002131 composite material Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 17
- 229920005591 polysilicon Polymers 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229910006990 Si1-xGex Inorganic materials 0.000 claims abstract description 8
- 229910007020 Si1−xGex Inorganic materials 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 238000000407 epitaxy Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 210000004209 hair Anatomy 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000035800 maturation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710473915.8A CN107342319B (zh) | 2017-06-21 | 2017-06-21 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710473915.8A CN107342319B (zh) | 2017-06-21 | 2017-06-21 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107342319A true CN107342319A (zh) | 2017-11-10 |
CN107342319B CN107342319B (zh) | 2019-12-10 |
Family
ID=60220928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710473915.8A Active CN107342319B (zh) | 2017-06-21 | 2017-06-21 | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107342319B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630748A (zh) * | 2018-05-09 | 2018-10-09 | 燕山大学 | 全平面太赫兹复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN108649067A (zh) * | 2018-05-09 | 2018-10-12 | 燕山大学 | 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN109148291A (zh) * | 2018-08-15 | 2019-01-04 | 深圳市诚朗科技有限公司 | 一种晶体管及其制作方法 |
CN109405860A (zh) * | 2018-09-19 | 2019-03-01 | 天津大学 | 基于天线直接匹配的锗硅异质结双极晶体管探测器 |
CN112992898A (zh) * | 2021-02-05 | 2021-06-18 | 重庆邮电大学 | 一种SiGe BiCMOS晶体管集成结构及其实现方法 |
CN113838923A (zh) * | 2021-09-23 | 2021-12-24 | 燕山大学 | 一种三维应变Si双极结型晶体管及其制备方法 |
CN113838926A (zh) * | 2021-08-16 | 2021-12-24 | 北京工业大学 | 一种具有高压和高增益模式的高频横向双极晶体管电路 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030006407A1 (en) * | 1996-10-16 | 2003-01-09 | Taylor Geoff W. | Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit |
US20080116488A1 (en) * | 2006-11-20 | 2008-05-22 | Kyu-Hwan Shim | Transistor structure and manufacturing method thereof |
CN101257043A (zh) * | 2007-02-28 | 2008-09-03 | 三洋电机株式会社 | 半导体装置及其制造方法 |
US20100062578A1 (en) * | 2007-06-01 | 2010-03-11 | Detlef Wilhelm | Bipolar Transistor and Method for Making Same |
CN103050400A (zh) * | 2011-10-11 | 2013-04-17 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN106298896A (zh) * | 2015-06-23 | 2017-01-04 | 格罗方德半导体公司 | 在有源装置区中具有埋入介电区的双极结晶体管 |
-
2017
- 2017-06-21 CN CN201710473915.8A patent/CN107342319B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030006407A1 (en) * | 1996-10-16 | 2003-01-09 | Taylor Geoff W. | Apparatus and a method of fabricating inversion channel devices with precision gate doping for a monolithic integrated circuit |
US20080116488A1 (en) * | 2006-11-20 | 2008-05-22 | Kyu-Hwan Shim | Transistor structure and manufacturing method thereof |
CN101257043A (zh) * | 2007-02-28 | 2008-09-03 | 三洋电机株式会社 | 半导体装置及其制造方法 |
US20100062578A1 (en) * | 2007-06-01 | 2010-03-11 | Detlef Wilhelm | Bipolar Transistor and Method for Making Same |
CN103050400A (zh) * | 2011-10-11 | 2013-04-17 | Nxp股份有限公司 | 双极晶体管制造方法、双极晶体管和集成电路 |
CN106298896A (zh) * | 2015-06-23 | 2017-01-04 | 格罗方德半导体公司 | 在有源装置区中具有埋入介电区的双极结晶体管 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630748A (zh) * | 2018-05-09 | 2018-10-09 | 燕山大学 | 全平面太赫兹复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN108649067A (zh) * | 2018-05-09 | 2018-10-12 | 燕山大学 | 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN108630748B (zh) * | 2018-05-09 | 2020-05-29 | 燕山大学 | 全平面太赫兹复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN108649067B (zh) * | 2018-05-09 | 2020-12-01 | 燕山大学 | 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 |
CN109148291A (zh) * | 2018-08-15 | 2019-01-04 | 深圳市诚朗科技有限公司 | 一种晶体管及其制作方法 |
CN109405860A (zh) * | 2018-09-19 | 2019-03-01 | 天津大学 | 基于天线直接匹配的锗硅异质结双极晶体管探测器 |
CN109405860B (zh) * | 2018-09-19 | 2020-12-29 | 天津大学 | 基于天线直接匹配的锗硅异质结双极晶体管探测器 |
CN112992898A (zh) * | 2021-02-05 | 2021-06-18 | 重庆邮电大学 | 一种SiGe BiCMOS晶体管集成结构及其实现方法 |
CN113838926A (zh) * | 2021-08-16 | 2021-12-24 | 北京工业大学 | 一种具有高压和高增益模式的高频横向双极晶体管电路 |
CN113838926B (zh) * | 2021-08-16 | 2023-09-12 | 北京工业大学 | 一种具有高压和高增益模式的高频横向双极晶体管电路 |
CN113838923A (zh) * | 2021-09-23 | 2021-12-24 | 燕山大学 | 一种三维应变Si双极结型晶体管及其制备方法 |
CN113838923B (zh) * | 2021-09-23 | 2023-07-25 | 燕山大学 | 一种三维应变Si双极结型晶体管及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107342319B (zh) | 2019-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107342319A (zh) | 一种复合应变Si/SiGe异质结双极晶体管及其制备方法 | |
US5637889A (en) | Composite power transistor structures using semiconductor materials with different bandgaps | |
CN107275407A (zh) | 一种碳化硅vdmos器件及其制作方法 | |
CN100530684C (zh) | 异质结双极型晶体管及其制造方法 | |
CN108649067B (zh) | 一种太赫兹SOI复合应变Si/SiGe异质结双极晶体管及制备方法 | |
CN108630748B (zh) | 全平面太赫兹复合应变Si/SiGe异质结双极晶体管及制备方法 | |
CN107275406A (zh) | 一种碳化硅TrenchMOS器件及其制作方法 | |
US11322595B2 (en) | Heterojunction bipolar transistor and preparation method thereof | |
CN109166916B (zh) | 一种绝缘栅双极型晶体管及其制备方法 | |
CN109192771B (zh) | 一种电荷存储型绝缘栅双极型晶体管及其制备方法 | |
CN107425068A (zh) | 一种碳化硅TrenchMOS器件及其制作方法 | |
CN105047719B (zh) | 基于InAsN‑GaAsSb材料的交错型异质结隧穿场效应晶体管 | |
CN107887430A (zh) | 衬底施加单轴应力的硅锗异质结双极晶体管及其制造方法 | |
CN106298943B (zh) | 一种具有体电场调制的横向双扩散金属氧化物半导体场效应管 | |
CN111739939A (zh) | 一种高频硅锗异质结双极晶体管及其制造方法 | |
CN109346509B (zh) | 一种电荷存储型绝缘栅双极型晶体管及其制备方法 | |
CN107146811A (zh) | 基于阻挡层调制结构的电流孔径功率晶体管及其制作方法 | |
CN108054203B (zh) | 一种绝缘体上硅锗衬底的异质结双极晶体管及其制造方法 | |
CN101944528B (zh) | Mos栅基极开关四极管 | |
CN104347403A (zh) | 一种绝缘栅双极性晶体管的制造方法 | |
CN101246825B (zh) | 硅材料高频低功耗功率结型场效应晶体管(jfet)的制造方法 | |
CN206422071U (zh) | 功率半导体器件 | |
CN106981510A (zh) | 一种碳化硅双极结型晶体管 | |
WO2015014282A1 (zh) | 绝缘栅双极型晶体管的制造方法 | |
US11195940B2 (en) | High-voltage terahertz strained SiGe/InGaP heterojunction bipolar transistor and preparation method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhou Chunyu Inventor after: Wang Guanyu Inventor after: Song Yutong Inventor before: Zhou Chunyu Inventor before: Wang Guanyu |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220307 Address after: 518112 Room 601, building A3, No. 31, Bulan Road, xialilang community, Nanwan street, Longgang District, Shenzhen, Guangdong Province Patentee after: Shenzhen Chengxin Micro Technology Co.,Ltd. Address before: 066004 No. 438 west section of Hebei Avenue, seaport District, Hebei, Qinhuangdao Patentee before: Yanshan University |
|
TR01 | Transfer of patent right |