CN108615796A - A kind of SLD devices and preparation method thereof of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO - Google Patents
A kind of SLD devices and preparation method thereof of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 13
- 239000010980 sapphire Substances 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 9
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 7
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- 238000001312 dry etching Methods 0.000 claims description 3
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- 229910052682 stishovite Inorganic materials 0.000 claims 2
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- 239000000543 intermediate Substances 0.000 description 6
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
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- 229910017604 nitric acid Inorganic materials 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
A kind of SLD devices of " people " font wave crest structure based on GaN LED secondary epitaxies ITO, wherein, including Sapphire Substrate and the u GaN buffer layers being sequentially arranged in Sapphire Substrate, Al GaN layers, n GaN layers, n GaN layers are equipped with first step structure and second step structure, first step structure includes the first insulating layer being located in n GaN layers, and the first insulating layer is equipped with the first metal electrode being connect with n GaN layers；Second step structure includes the InGaN/GaN mqw active layers being sequentially arranged in n GaN layers, p GaN layers and second insulating layer, " people " font ITO wave crest structures being connect with p GaN layers are equipped between second insulating layer and p GaN layers, " people " the font top of " people " font ITO wave crest structures is equipped with ohmic contact metal layer, and position corresponding with ohmic contact metal layer is equipped with the second metal electrode being connect with ohmic contact metal layer in second insulating layer.The present invention also provides the preparation methods of above-mentioned SLD devices.The present invention can improve restriction effect of the device to light, reduce the bulk of optical feedback of device, improve the stability of device.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, to a kind of people based on GaN-LED secondary epitaxies ITO
The SLD devices and preparation method thereof of font wave crest structure.
Background technology
For SLD as a kind of a kind of device of optical characteristics between LD and LED as LED, SLD has wide wave
Long spectrum, is converted into lower temporal coherence；SLD is again similar with LD simultaneously, has higher transmission power and smaller diverging
Angle.Since SLD has the characteristic of both LED and LD simultaneously, in view of be applied to can be by optical communication field.
At present due to the light source device of visible light communication have LD, LED, SLD these three, wherein since LD needs additional dissipate
Hot systems, and its equipment is more expensive, the light of at the same time LD transmittings is too strong, and certain injury can be caused to human eye；Compared to
The reliability of LED and SLD, LD are poor, and the reliability of LED is best.Although the technical maturity of LED, device is small and exquisite, convenient for integrated,
Commercialization is universal, cheap, but the modulation bandwidth of commercial LED is generally very low at present, only several MHz, so low band
Width seriously limits development of the LED in visible light high-speed communication.The capacity for transmitting information is very low, and the angle of divergence is very big, causes to pass
Defeated distance is very short.And SLD at present be all based on LD extensions repacking, substrate GaN is expensive, thus also after
The cost for having held LD is in contrast expensive, the shortcomings of needing additional heat dissipation equipment.
Therefore it is small and exquisite to find a kind of device, convenient for integrated, cheap, equipment is simple, and has high brightness and lofty tone
The SLD light source devices of bandwidth processed are the trend places of this field.
Invention content
The object of the present invention is to provide a kind of SLD devices of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO
And preparation method thereof, the present invention by GaN-LED secondary epitaxy ITO be used as wave crest, improve restriction effect of the device to light,
By designing herringbone ITO wave crest structures, the bulk of optical feedback of device is reduced, the stability of device is improved.
In order to solve the above technical problems, the technical solution adopted by the present invention is：One kind being based on GaN-LED secondary epitaxies ITO
Herringbone wave crest structure SLD devices, wherein including Sapphire Substrate and the u- that is sequentially arranged in the Sapphire Substrate
GaN buffer layers, Al-GaN layers, n-GaN layers, the n-GaN layers are equipped with first step structure and second step structure, and described the
One step structure includes the first insulating layer being located on the n-GaN layers, first insulating layer be equipped with it is n-GaN layers described
First metal electrode of connection；The second step structure includes the InGaN/GaN Quantum Well being sequentially arranged on the n-GaN layers
Active layer, p-GaN layer and second insulating layer are equipped between the second insulating layer and p-GaN layer and connect with the p-GaN layer
Herringbone ITO wave crest structures, the herringbone top of the herringbone ITO wave crest structures are equipped with ohmic contact metal layer, and described the
Position corresponding with the ohmic contact metal layer is equipped with the second gold medal being connect with the ohmic contact metal layer on two insulating layers
Belong to electrode.In use, the SLD devices need to coordinate formal dress substrate to use, it only need to be by the first metal electrode of the SLD devices and second
Metal electrode is connect with the positive and negative anodes of formal dress substrate respectively.
Using herringbone ITO wave crest structures as wave crest in the present invention so that light feedback reduces, and enhances the reliable of device
Property.And due to the refractive index of ITO（n=2.036）Refractive index than GaN（n=2.45）It is low, known by total reflection formula, light is from folding
Penetrate that the big directive refractive index of rate is small to be easily totally reflected, therefore light can be limited between device levels.Make luminous energy edge
The transmitting of waveguiding structure direction.
Further, the u-GaN buffer layers in the Sapphire Substrate, Al-GaN layers and n-GaN layers and n-GaN layers
On InGaN/GaN mqw active layers and p-GaN layer sequentially formed by epitaxial growth.
Further, the herringbone ITO wave crest structures between second insulating layer and p-GaN layer are to pass through
It is formed after corrosion after MOCVD growths.The thickness of the herringbone ITO wave crest structures is 80nm.The herringbone ITO wave crests
Structure is after being grown by MOCVD through chloroazotic acid（Hydrochloric acid and nitric acid volume ratio are 3:1）It is formed after corrosion.
Further, the ohmic contact metal layer is formed by deposition of metal, the metal ohmic contact of the deposition
Layer includes Ni metal layers and Au metal layers, and the thickness of deposition is respectively 5nm and 7nm.
Further, first metal electrode and the second metal electrode are by exhausted in the first insulating layer and second respectively
Windowing is corroded in the corresponding position of edge layer, and electrode evaporation metal contact layer is formed in the window, the electrode metal of vapor deposition
Contact layer includes Cr metal layers, Pd metal layers and Au metal layers, and the thickness that they are deposited is respectively 20nm, 40nm and 200nm.
Further, first insulating layer and second insulating layer are SiO insulating layers.First insulating layer and second is absolutely
Windowing is corroded in the corresponding position of edge layer, is corroded by BOE.
The present invention also provides a kind of preparations of the SLD devices of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO
Method, wherein include the following steps：
S1. u-GaN buffer layers, Al-GaN layers, n-GaN layers, InGaN/ are sequentially formed by epitaxial growth on a sapphire substrate
GaN mqw active layers and p-GaN layer, and grow to form secondary epitaxy ITO layer by MOCVD in p-GaN layer；
S2. it uses mask to carry out mesa patternings to the surface of secondary epitaxy ITO layer, secondary epitaxy is then corroded by chloroazotic acid
The corresponding position of first step structure is to p-GaN layer in ITO layer, then by inductively coupled plasma in first step structure
Corresponding position layer from p-GaN layer dry etching to n-GaN；
S3. it uses mask to carry out mesa patternings to the surface of the secondary epitaxy ITO layer remained in step S2, passes through king
Water corrodes the region in the secondary epitaxy ITO layer that remains in addition to the corresponding position of herringbone ITO wave crest structures,
P-GaN layer is eroded to, forms herringbone ITO wave crest structures in p-GaN layer；
S4. mask is used to carry out mesa patternings to the surface of herringbone ITO wave crest structures, in herringbone ITO wave crest structures
Herringbone overburden ohmic contact metal layer；
S5. position corresponding with second step structure on n-GaN layers and on the corresponding position of first step structure, p-GaN layer
And depositing insulating layer on the surface of herringbone ITO wave crest structures, it is respectively formed the first insulating layer and second insulating layer；
S6. mask is used to carry out SiO patternings to the first insulating layer and second insulating layer respectively, using BOE in the first insulating layer
On and second insulating layer on corresponding with ohmic contact metal layer position corrode windowing, the window on the first insulating layer with
N-GaN layers below first insulating layer are connected to, the window in second insulating layer and the metal ohmic contact below second insulating layer
Layer connection；
S7. the surface of the first insulating layer of mask pair and second insulating layer is used to carry out PAD patternings, then in the first insulating layer
With the window area electrode evaporation metal contact layer of second insulating layer, it is respectively formed the first metal electrode and the second metal electrode；
So far, prepared by the SLD devices of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO completes.
Further, in the step S4, mesa patternings are carried out to the surface of herringbone ITO wave crest structures using mask
When, photoetching development is using negtive photoresist.
Further, in the step S4, after deposit ohmic contact metal layer, the ohmic contact metal layer of formation is carried out
Annealing.
Compared with prior art, beneficial effects of the present invention：
The present invention, using the ITO of secondary epitaxy as wave crest, can increase device and be imitated to the limitation of light in GaN-LED extensions
Fruit, enable light assemble along ridge waveguide light-emitting directions, the angle of divergence very little of device.
The shape of wave crest is set as herringbone by the present invention, preferably can be absorbed light in uptake zone, be reduced the feedback of light,
To generate incoherent light, the stability of device is improved.
The present invention makes SLD in existing cheap GaN-LED extensions, reduces production cost so that this device
Commercial value is embodied.
Description of the drawings
Fig. 1 is the structural schematic diagram for the SLD device intermediates that step 1 obtains in the embodiment of the present invention 2.
Fig. 2 is the structural schematic diagram for the SLD device intermediates that step 2 obtains in the embodiment of the present invention 2.
Fig. 3 is the structural schematic diagram for the SLD device intermediates that step 3 obtains in the embodiment of the present invention 2.
Fig. 4 is the structural schematic diagram for the SLD device intermediates that step 4 obtains in the embodiment of the present invention 2.
Fig. 5 is the structural schematic diagram for the SLD device intermediates that step 5 obtains in the embodiment of the present invention 2.
Fig. 6 is the structural schematic diagram for the SLD device intermediates that step 6 obtains in the embodiment of the present invention 2.
Fig. 7 is the structural schematic diagram for the SLD device final finisheds that step 7 obtains in the embodiment of the present invention 2.
Specific implementation mode
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent；It is attached in order to more preferably illustrate the present embodiment
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art,
The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of position relationship described in attached drawing
Illustrate, should not be understood as the limitation to this patent.
Embodiment 1
As shown in Fig. 1 to Fig. 7, a kind of SLD devices of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO, wherein
Including Sapphire Substrate 1 and the u-GaN buffer layers 2, Al-GaN layers 3, the n-GaN layers 4 that are sequentially arranged in the Sapphire Substrate 1,
The n-GaN layers 4 are equipped with first step structure and second step structure, and the first step structure includes being located at the n-
The first insulating layer 5 in GaN layer 4, first insulating layer 5 are equipped with the first metal electrode 6 being connect with the n-GaN layers 4；
The second step structure includes the InGaN/GaN mqw active layers 7 being sequentially arranged on the n-GaN layers 4,8 and of p-GaN layer
Second insulating layer 9 is equipped with the herringbone ITO waves being connect with the p-GaN layer 8 between the second insulating layer 9 and p-GaN layer 8
The herringbone top of ridge structure 10, the herringbone ITO wave crests structure 10 is equipped with ohmic contact metal layer 11, second insulation
Position corresponding with the ohmic contact metal layer 11 is equipped with the second metal being connect with the ohmic contact metal layer 11 on layer 9
Electrode 12.In use, the SLD devices need to coordinate formal dress substrate to use, it only need to be by the first metal electrode 6 of the SLD devices and the
Two metal electrodes 12 are connect with the positive and negative anodes of formal dress substrate respectively.
Wave crest is used as using herringbone ITO wave crests structure 10 in the present invention so that light feedback reduces, and enhances the reliable of device
Property.And due to the refractive index of ITO（n=2.036）Refractive index than GaN（n=2.45）It is low, known by total reflection formula, light is from folding
Penetrate that the big directive refractive index of rate is small to be easily totally reflected, therefore light can be limited between device levels.Make luminous energy edge
The transmitting of waveguiding structure direction.
In the present embodiment, the u-GaN buffer layers 2, Al-GaN layers 3 and n-GaN layers 4 in the Sapphire Substrate 1 and n-
InGaN/GaN mqw active layers 7 and p-GaN layer 8 in GaN layer 4 are sequentially formed by epitaxial growth.
In the present embodiment, the herringbone ITO wave crests structure 10 between the second insulating layer 9 and p-GaN layer 8 is logical
It is formed after corrosion after crossing MOCVD growths.The thickness of the herringbone ITO wave crests structure 10 is 80nm.The herringbone ITO
Wave crest structure 10 is after being grown by MOCVD through chloroazotic acid（Hydrochloric acid and nitric acid volume ratio are 3:1）It is formed after corrosion.
In the present embodiment, the ohmic contact metal layer 11 is formed by deposition of metal, the Ohmic contact of the deposition
Metal layer 11 includes Ni metal layers and Au metal layers, and the thickness of deposition is respectively 5nm and 7nm.
In the present embodiment, first metal electrode, 6 and second metal electrode 12 is by respectively in 5 He of the first insulating layer
Windowing is corroded in 9 corresponding position of second insulating layer, and electrode evaporation metal contact layer is formed in the window, the electricity of vapor deposition
Pole metal contact layer includes Cr metal layers, Pd metal layers and Au metal layers, and the thickness that they are deposited is respectively 20nm, 40nm and
200nm。
In the present embodiment, first insulating layer 5 and second insulating layer 9 are SiO insulating layers.First insulating layer, 5 He
Windowing is corroded in 9 corresponding position of second insulating layer, is corroded by BOE.
Embodiment 2
The present invention also provides a kind of preparation sides of the SLD devices of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO
Method, wherein include the following steps：
S1. as shown in Figure 1, in Sapphire Substrate 1 by epitaxial growth sequentially form u-GaN buffer layers 2, Al-GaN layers 3,
N-GaN layers 4, InGaN/GaN mqw active layers 7 and p-GaN layer 8, and grown by MOCVD in p-GaN layer 8 to be formed it is secondary
Extension ITO layer；
S2. as shown in Fig. 2, carrying out mesa patternings to the surface of secondary epitaxy ITO layer using mask, then pass through chloroazotic acid corruption
The corresponding position of first step structure in secondary epitaxy ITO layer is lost to p-GaN layer 8 then to exist by inductively coupled plasma
The corresponding position of first step structure is from 8 dry etching of p-GaN layer to n-GaN layers 4；
S3. as shown in figure 3, carrying out mesa patterns to the surface of the secondary epitaxy ITO layer remained in step S2 using mask
Change, by chloroazotic acid to the area in the secondary epitaxy ITO layer that remains in addition to 10 corresponding position of herringbone ITO wave crests structure
Domain is corroded, and p-GaN layer 8 is eroded to, and herringbone ITO wave crests structure 10 is formed in p-GaN layer 8；
S4. as shown in figure 4, mesa patternings are carried out to the surface of herringbone ITO wave crests structure 10 using mask, in herringbone
The herringbone overburden ohmic contact metal layer 11 of ITO wave crests structure 10；
S5. as shown in figure 5, on n-GaN layers 4 position corresponding with first step structure, in p-GaN layer 8 with second step knot
Depositing insulating layer on the corresponding position of structure and the surface of herringbone ITO wave crests structure 10 is respectively formed the first insulating layer 5 and
Two insulating layers 9；
S6. it as shown in fig. 6, carrying out SiO patternings to the first insulating layer 5 and second insulating layer 9 respectively using mask plate, utilizes
BOE is on the first insulating layer 5, and windowing is corroded in position corresponding with ohmic contact metal layer 11 in second insulating layer 9,
Window on first insulating layer 5 is connected to the n-GaN layers 4 of 5 lower section of the first insulating layer, the window in second insulating layer 9 and second
The ohmic contact metal layer 11 of 9 lower section of insulating layer is connected to；
S7. as shown in fig. 7, carrying out PAD patternings using the surface of the first insulating layer of mask pair 5 and second insulating layer 9, then
In the window area electrode evaporation metal contact layer of the first insulating layer 5 and second insulating layer 9, it is respectively formed the first metal electrode 6
With the second metal electrode 12；So far, prepared by the SLD devices of the herringbone wave crest structure based on GaN-LED secondary epitaxies ITO
At.
In the present embodiment, in the step S4, mesa figures are carried out to the surface of herringbone ITO wave crests structure 10 using mask
When case, photoetching development is using negtive photoresist.
In the present embodiment, in the step S4, after deposit ohmic contact metal layer 11, to the ohmic contact metal layer of formation
11 are made annealing treatment.
Obviously, the above embodiment of the present invention is merely to clearly demonstrate examples made by the present invention, and be not pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
All any modification, equivalent and improvement etc., should be included in the claims in the present invention made by within the spirit and principle of invention
Protection domain within.
Claims (10)
1. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO, which is characterized in that including indigo plant
Jewel substrate（1）Be sequentially arranged at the Sapphire Substrate（1）On u-GaN buffer layers（2）, Al-GaN layers（3）, n-GaN layers
（4）, n-GaN layers described（4）It is equipped with first step structure and second step structure, the first step structure includes being located at institute
State n-GaN layers（4）On the first insulating layer（5）, first insulating layer（5）Be equipped with it is n-GaN layers described（4）The of connection
One metal electrode（6）；The second step structure is n-GaN layers described including being sequentially arranged at（4）On InGaN/GaN Quantum Well have
Active layer（7）, p-GaN layer（8）And second insulating layer（9）, the second insulating layer（9）And p-GaN layer（8）Between be equipped with it is described
P-GaN layer（8）" people " font ITO wave crest structures of connection（10）, " people " the font ITO wave crest structures（10）" people " font
Top is equipped with ohmic contact metal layer（11）, the second insulating layer（9）The upper and ohmic contact metal layer（11）It is corresponding
Position is equipped with and the ohmic contact metal layer（11）Second metal electrode of connection（12）.
2. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 1
Part, which is characterized in that the Sapphire Substrate（1）On u-GaN buffer layers（2）, Al-GaN layers（3）With n-GaN layers（4）, with
And n-GaN layers（4）On InGaN/GaN mqw active layers（7）And p-GaN layer（8）It is to be sequentially formed by epitaxial growth
's.
3. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 1
Part, which is characterized in that the second insulating layer（9）And p-GaN layer（8）Between " people " font ITO wave crest structures（10）It is logical
It is formed after corrosion after crossing MOCVD growths.
4. a kind of SLD of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 1 or 3
Device, which is characterized in that " people " the font ITO wave crest structures（10）Thickness be 80nm, and " people " font ITO wave crests
Structure（10）It is formed after chloroazotic acid corrodes after being grown by MOCVD.
5. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 1
Part, which is characterized in that the ohmic contact metal layer（11）It is formed by deposition of metal, the metal ohmic contact of the deposition
Layer（11）Including Ni metal layers and Au metal layers, the thickness of deposition is respectively 5nm and 7nm.
6. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 1
Part, which is characterized in that first metal electrode（6）With the second metal electrode（12）It is by respectively in the first insulating layer（5）
And second insulating layer（9）Windowing is corroded in corresponding position, and electrode evaporation metal contact layer is formed in the window, vapor deposition
Electrode metal contact layer include Cr metal layers, Pd metal layers and Au metal layers, the thickness that they are deposited is respectively 20nm, 40nm
And 200nm.
7. a kind of SLD of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 1 or 6
Device, which is characterized in that first insulating layer（5）And second insulating layer（9）For SiO2Insulating layer, first insulating layer
（5）And second insulating layer（9）Windowing is corroded in corresponding position, is corroded by BOE.
8. a kind of preparation method of the SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO, feature
It is, includes the following steps：
S1. in Sapphire Substrate（1）It is upper that u-GaN buffer layers are sequentially formed by epitaxial growth（2）, Al-GaN layers（3）、n-GaN
Layer（4）, InGaN/GaN mqw active layers（7）And p-GaN layer（8）, and in p-GaN layer（8）It is upper to grow to be formed by MOCVD
Secondary epitaxy ITO layer；
S2. it uses mask to carry out mesa1 patternings to the surface of secondary epitaxy ITO layer, secondary epitaxy is then corroded by chloroazotic acid
The corresponding position of first step structure is to p-GaN layer in ITO layer（8）, then by inductively coupled plasma in first step
The corresponding position of structure is from p-GaN layer（8）Dry etching is to n-GaN layers（4）；
S3. it uses mask to carry out mesa2 patternings to the surface of the secondary epitaxy ITO layer remained in step S2, passes through king
Water is to removing " people " font ITO wave crest structures in the secondary epitaxy ITO layer that remains（10）Region except corresponding position into
Row corrosion, erodes to p-GaN layer（8）, in p-GaN layer（8）Upper formation " people " font ITO wave crest structures（10）；
S4. use mask to " people " font ITO wave crest structures（10）Surface carry out mesa2 patternings, in " people " font ITO
Wave crest structure（10）" people " font overburden ohmic contact metal layer（11）；
S5. at n-GaN layers（4）Upper position corresponding with first step structure, p-GaN layer（8）It is upper corresponding with second step structure
Position and " people " font ITO wave crest structures（10）Surface on depositing insulating layer, be respectively formed the first insulating layer（5）With
Two insulating layers（9）；
S6. use mask plate respectively to the first insulating layer（5）And second insulating layer（9）Carry out SiO2Patterning, using BOE the
One insulating layer（5）On, and in second insulating layer（9）Upper and ohmic contact metal layer（11）Windowing is corroded in corresponding position,
First insulating layer（5）On window and the first insulating layer（5）The n-GaN layers of lower section（4）Connection, second insulating layer（9）On window
Mouth and second insulating layer（9）The ohmic contact metal layer of lower section（11）Connection；
S7. the first insulating layer of mask pair is used（5）And second insulating layer（9）Surface carry out PAD patternings, then first
Insulating layer（5）And second insulating layer（9）Window area electrode evaporation metal contact layer, be respectively formed the first metal electrode（6）
With the second metal electrode（12）；So far, prepared by the SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO
It completes.
9. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 8
The preparation method of part, which is characterized in that in the step S4, using mask to " people " font ITO wave crest structures（10）Surface
When carrying out mesa2 patternings, photoetching development is using negtive photoresist.
10. a kind of SLD devices of " people " font wave crest structure based on GaN-LED secondary epitaxies ITO according to claim 8
The preparation method of part, which is characterized in that in the step S4, deposit ohmic contact metal layer（11）Afterwards, ohm of formation is connect
Touch metal layer（11）It is made annealing treatment.
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| US20130214320A1 (en) * | 2012-02-21 | 2013-08-22 | Nichia Corporation | Semiconductor light emitting element and method for producing the same |
| CN103503174A (en) * | 2011-05-02 | 2014-01-08 | 松下电器产业株式会社 | Super-luminescent diode |
| US20160118531A1 (en) * | 2013-09-03 | 2016-04-28 | Sensor Electronic Technology, Inc. | Optoelectronic Device with Modulation Doping |
| CN105762236A (en) * | 2014-12-15 | 2016-07-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nitride super luminescent diode and preparation method thereof |
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| CN103503174A (en) * | 2011-05-02 | 2014-01-08 | 松下电器产业株式会社 | Super-luminescent diode |
| US20130214320A1 (en) * | 2012-02-21 | 2013-08-22 | Nichia Corporation | Semiconductor light emitting element and method for producing the same |
| US20160118531A1 (en) * | 2013-09-03 | 2016-04-28 | Sensor Electronic Technology, Inc. | Optoelectronic Device with Modulation Doping |
| CN105762236A (en) * | 2014-12-15 | 2016-07-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Nitride super luminescent diode and preparation method thereof |
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