CN108610035A - High thermal expansion ceramic baseplate material of high intensity and preparation method thereof - Google Patents
High thermal expansion ceramic baseplate material of high intensity and preparation method thereof Download PDFInfo
- Publication number
- CN108610035A CN108610035A CN201810507528.6A CN201810507528A CN108610035A CN 108610035 A CN108610035 A CN 108610035A CN 201810507528 A CN201810507528 A CN 201810507528A CN 108610035 A CN108610035 A CN 108610035A
- Authority
- CN
- China
- Prior art keywords
- thermal expansion
- high thermal
- ceramic
- high intensity
- coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention belongs to electronic ceramics encapsulating material field, specific high thermal expansion ceramic baseplate material of high intensity and preparation method thereof is suitable for the ceramic package of large scale integrated chip, is encapsulated particularly suitable for ceramic ball grid array (CBGA).The present invention uses low temperature co-fired technique, and simple process is easy, and raw material are environmentally protective without polluter is limited in RoHS, and material property is stablized；It is excellent to provide high intensity high thermal expansion coefficient ceramic substrate material dielectric properties by the redesign to material prescription by the present invention：Dielectric constant 5~6, the small ＜ of dielectric loss 1.0 × 10‑3, bending strength is 170 190MPa, and Young's modulus is up to 60 70GPa, and coefficient of thermal expansion is 10~11 × 10‑6/℃；It can realize that the perfection with specific coefficient of thermal expansion pcb board is thermally matched, a kind of fabulous ceramic substrate material is provided for the encapsulation of IC devices；Meanwhile the baseplate material low production cost, there is industry Popularizing of A.
Description
Technical field
The invention belongs to electronic ceramics encapsulating material fields, are related to the high thermal expansion ceramic baseplate material of high intensity and its preparation
Method is suitable for the ceramic package of large scale integrated chip, is encapsulated particularly suitable for ceramic ball grid array (CBGA).
Background technology
Hyundai electronics rapid development of information technology, greatly push electronic device to high-performance, it is highly reliable, inexpensive,
Miniaturization, portability and popular universal etc. development.The development of IC (integrated circuit) greatly improves the density of circuit,
The traditional printed circuit orders of magnitude several greatly of circuit function density ratio of one IC chip carrying, especially VLSI are (ultra-large
Integrated circuit).And the advantage of IC only can be only achieved when itself and other resistors, capacitor, multi-chip hybrid circuit etc. are integrated
Most preferably, therefore there is still a need for being assembled to circuit, IC itself is also required to be encapsulated into device to cope with adverse circumstances sometimes.
IC package early has evolved into independent industry in the world, and collectively forms and partly lead with IC designs, IC manufactures and chip testing
Four big pillars of body industry.China's independent research goes out the novel encapsulating structure of a batch, but in general, the electronic seal in China
Dress industry or comparable backwardness.
BGA Package (BGA) technology that the nineties rises is to plant spherical shape by array way below substrate to draw
Foot is equipped with chip on substrate, is a kind of surface installing type encapsulation.BGA package presses the type of substrate, is broadly divided into PBGA (modelings
Seal BGA) and CBGA (ceramic BGA)；Ceramic substrate material the advantage is that compared to plastics：(1) have lower dielectric constant and
Loss, can improve the transmission rate of signal；(2) high resistivity ensures the insulating properties between signal wire；(3) ceramic material thermal conductivity
It is relatively high, it can preferably distribute heat when making multilager base plate；(4) plant ball is easier than plastics, and I/O numbers are big；(5) stability
It is good, it can be used to require air-tightness high occasion；(6) utilize multilayer ceramic substrate interior energy made of thick film hybrid technology real
Existing passive device integration；Thus than PBGA packaging density highers.But it is also deposited in commonly used ceramic packaging material now
In a series of problems：Material and electrode material and the thermally matched poor performance of chip, the coefficient of thermal expansion seriation of baseplate material
Too poor, raw material has pollution etc. to environment.
High-density packages are disclosed in the patent of invention that application publication number is CN106904953A to be made pottery with high thermal expansion coefficient
Ceramic material and preparation method thereof, in the invention material, by percentage to the quality, the component of the ceramic material includes：SiO2：55
~70wt%, BaO：20~30wt%, B2O3：5~10wt%, Al2O3：2~5wt%, Y2O3：0.1~1wt% and CrO2With
ZrO2Mixture：1~3wt%；The high expansion coefficient low-temperature co-burning ceramic material of preparation, dielectric constant (5~6), dielectric loss
tanδ<4.0×10-3, coefficient of thermal expansion is 12~15ppm/ DEG C, and bending strength is up to 170~240MPa, Young's modulus is 50~
70GPa.Disclosed in the patent of invention that application publication number is CN106045323A a kind of high thermal expansion coefficient ceramic material and its
Preparation method, the high thermal expansion coefficient ceramic material formula are：CaO：20~65wt%, B2O3：5~15wt%, SiO2：20~
55wt%, Al2O3：0~10wt%, ZrO2：0~10wt%, Cr2O3Or Co2O3：0~2wt% and 25~65wt% quartz sands.
The dielectric constant of the material is 5.0~6.5, dielectric loss ＜ 1.0 × 10-3, insulation resistivity ＞ 1.0 × 108Ω cm, heat are swollen
Swollen coefficient is 8.5~12.5 × 10-6/℃.The coefficient of thermal expansion span section of the above material is too big, can not be with thermally expanding in the future
Number is thermally matched for 10~11ppm/ DEG C of Novel PCB board progress, it is difficult to meet the application under some environmental conditions；And in raw material
Contain Cr elements, can cause environmental pollution.
It can be seen that there is an urgent need to study a kind of high thermal expansion ceramic substrate material of the high intensity of coefficient of thermal expansion seriation
Material so that its future can be 10~11 × 10 with coefficient of thermal expansion-6/ DEG C Novel PCB board carry out it is thermally matched and reduce
The pollution of heavy metal in raw material.
Invention content
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide the high thermal expansion ceramic baseplate material of high intensity and its
Preparation method, the ceramic substrate material dielectric properties are excellent, while having high-flexural strength, high Young's modulus, and height thermally expands system
Number, and material property is stablized, in addition, the material is also small to Health Impact, is conducive to environmental protection.
To achieve the above object, the technical solution adopted by the present invention is：
The high thermal expansion ceramic baseplate material of high intensity, which is characterized in that
In terms of weight percent (wt%), the high thermal expansion ceramic baseplate material of high intensity is made of following components：
B2O3：5~10wt%；
BaO：25~35wt%；
SiO2：55~65wt%；
Al2O3：1~5wt%；
ZrO2+Sm2O3：1~10wt%, wherein ZrO2And Sm2O3Arbitrary proportion mixes.
The preparation method of the above-mentioned high thermal expansion ceramic baseplate material of high intensity, which is characterized in that include the following steps：
Step 1：With B2O3、BaO、SiO2、Al2O3、ZrO2、Sm2O3For raw material, is calculated, weighed simultaneously according to formula rate
It is uniformly mixed, obtains mixture；
Step 2：By step 1 gained mixture after ball milling, drying, sieving, evenly dispersed powder is obtained；
Step 3：Step 2 gained powder is packed into crucible, in electric furnace pre-burning 2-3 hours at a temperature of 600-700 DEG C；
Step 4：Step 3 Preburning material is become after being ground up, sieved and obtains evenly dispersed powder, then is granulated,
Compression moulding obtains idiosome；
Step 5：Idiosome obtained by step 4 compression moulding is placed in electric furnace, is sintered 1-2 hours at 900-950 DEG C after dumping,
Obtain the high thermal expansion ceramic baseplate material of high intensity.
The beneficial effects of the present invention are：
The present invention provides high intensity high thermal expansion coefficient ceramic substrate material and its preparation process, using low temperature co-fired work
Skill, simple process is easy, and raw material are environmentally protective without restriction polluter in RoHS (lead, mercury, cadmium, Cr VI, more bromines connection
Benzene and polybrominated diphenyl ethers), material property is stablized；It is swollen to provide high intensity high fever by the redesign to material prescription by the present invention
Swollen coefficient ceramics baseplate material dielectric properties are excellent：Dielectric constant 5~6, the small ＜ of dielectric loss 1.0 × 10-3, bending strength is
170-190MPa, Young's modulus are up to 60-70GPa, and coefficient of thermal expansion is 10~11 × 10-6/℃；Can be with thermally expanding in the future
Number is 10~11 × 10-6/ DEG C Novel PCB board perfection it is thermally matched, for IC devices encapsulate provide a kind of fabulous ceramic base
Plate material；By adding Sm2O3, the intensity of baseplate material is significantly improved, and by coefficient of thermal expansion control 10~11 ×
10-6/ DEG C, meanwhile, which has industry Popularizing of A.
Description of the drawings
Fig. 1 is the section SEM figures after the high intensity high thermal expansion coefficient ceramic substrate material of embodiment 2 is low temperature co-fired.
Fig. 2 is the XRD diffraction analysis after the high intensity high thermal expansion coefficient ceramic substrate material of embodiment 2 is low temperature co-fired
Figure.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
5 embodiments are provided in the specific embodiment of the invention, respectively number No.1~5, wherein high intensity height thermally expands
The concrete component of coefficient ceramics baseplate material is as shown in the table：
| Number | B2O3 | BaO | SiO2 | Al2O3 | ZrO2+Sm2O3 |
| No.1 | 5 | 25 | 65 | 1 | 4 |
| No.2 | 7 | 28 | 60 | 2 | 3 |
| No.3 | 8 | 26 | 55 | 4 | 7 |
| No.4 | 10 | 27 | 58 | 3 | 2 |
| No.5 | 6 | 32 | 59 | 2 | 1 |
Its preparation process is as follows：
The actual amount that the raw material of each component are calculated according to the weight percent for being formulated oxide used in table 1, weighs
And after batch mixing is uniform, the mixed powder obtained after ball milling, drying, sieving, after 600-700 DEG C of pre-burning heat preservation 2-3 hours, then
Powder after being ground up, sieved is granulated the powder body material, after dry-pressing formed, in air in 900-950 DEG C of sintering
And natural cooling obtains high intensity high thermal expansion coefficient ceramic substrate material after keeping the temperature 1-2 hours；
High intensity high thermal expansion coefficient ceramic substrate material is prepared into the various embodiments described above to test, properties
See the table below shown 2, wherein the microstructure of embodiment No.2 as shown in Figure 1, embodiment No.2 XRD diffraction analysis such as Fig. 2 institutes
Show：
As seen from the above table, it is excellent to provide high intensity high thermal expansion coefficient ceramic substrate material dielectric properties by the present invention：
Dielectric constant 5~6, the small ＜ of dielectric loss 1.0 × 10-3, bending strength 170-190MPa, Young's modulus is up to 60-70GPa,
Coefficient of thermal expansion is 10~11 × 10-6/℃；It can realize that with coefficient of thermal expansion be 10~11 × 10 in the future-6/ DEG C novel PCB
The perfection of plate is thermally matched.
The above description is merely a specific embodiment, any feature disclosed in this specification, except non-specifically
Narration, can be replaced by other alternative features that are equivalent or have similar purpose；Disclosed all features or all sides
Method or in the process the step of, other than mutually exclusive feature and/or step, can be combined in any way.
Claims (2)
1. the high thermal expansion ceramic baseplate material of high intensity, which is characterized in that
In terms of weight percent (wt%), the high thermal expansion ceramic baseplate material of high intensity is made of following components：
B2O3：5~10wt%；
BaO：25~35wt%；
SiO2：55~65wt%；
Al2O3：1~5wt%；
ZrO2+Sm2O3：1~10wt%, wherein ZrO2And Sm2O3Arbitrary proportion mixes.
2. by the preparation method of the high thermal expansion ceramic baseplate material of high intensity described in claim 1, which is characterized in that including following
Step：
Step 1：With B2O3、BaO、SiO2、Al2O3、ZrO2、Sm2O3For raw material, is calculated, weighed according to formula rate and mixed
Uniformly, mixture is obtained；
Step 2：By step 1 gained mixture after ball milling, drying, sieving, evenly dispersed powder is obtained；
Step 3：Step 2 gained powder is packed into crucible, in electric furnace pre-burning 2-3 hours at a temperature of 600-700 DEG C；
Step 4：Step 3 Preburning material is become after being ground up, sieved and obtains evenly dispersed powder, then is granulated, is suppressed
Molding, obtains idiosome；
Step 5：Idiosome obtained by step 4 compression moulding is placed in electric furnace, is sintered 1-2 hours, obtains high at 900-950 DEG C after dumping
The high thermal expansion ceramic baseplate material of intensity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810507528.6A CN108610035B (en) | 2018-05-24 | 2018-05-24 | High-strength high-thermal-expansion ceramic substrate material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810507528.6A CN108610035B (en) | 2018-05-24 | 2018-05-24 | High-strength high-thermal-expansion ceramic substrate material and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108610035A true CN108610035A (en) | 2018-10-02 |
| CN108610035B CN108610035B (en) | 2021-04-30 |
Family
ID=63663871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810507528.6A Active CN108610035B (en) | 2018-05-24 | 2018-05-24 | High-strength high-thermal-expansion ceramic substrate material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108610035B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110357597A (en) * | 2019-08-01 | 2019-10-22 | 电子科技大学 | High thermal expansion ceramic baseplate material of a kind of calcium borosilicate system and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106045323A (en) * | 2016-05-27 | 2016-10-26 | 电子科技大学 | High thermal expansion coefficient ceramic material and preparation method thereof |
| CN106430984A (en) * | 2016-09-22 | 2017-02-22 | 陕西科技大学 | Method for preparing microcrystal wollastonite glass from wollastonite |
| CN106746676A (en) * | 2017-01-19 | 2017-05-31 | 内蒙古科技大学 | A kind of Surface Crystallization devitrified glass containing rare earth and preparation method and application |
| CN106904953A (en) * | 2017-03-24 | 2017-06-30 | 电子科技大学 | High-density packages high thermal expansion coefficient ceramic material and preparation method thereof |
-
2018
- 2018-05-24 CN CN201810507528.6A patent/CN108610035B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106045323A (en) * | 2016-05-27 | 2016-10-26 | 电子科技大学 | High thermal expansion coefficient ceramic material and preparation method thereof |
| CN106430984A (en) * | 2016-09-22 | 2017-02-22 | 陕西科技大学 | Method for preparing microcrystal wollastonite glass from wollastonite |
| CN106746676A (en) * | 2017-01-19 | 2017-05-31 | 内蒙古科技大学 | A kind of Surface Crystallization devitrified glass containing rare earth and preparation method and application |
| CN106904953A (en) * | 2017-03-24 | 2017-06-30 | 电子科技大学 | High-density packages high thermal expansion coefficient ceramic material and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110357597A (en) * | 2019-08-01 | 2019-10-22 | 电子科技大学 | High thermal expansion ceramic baseplate material of a kind of calcium borosilicate system and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108610035B (en) | 2021-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102030471B (en) | Low-temperature cofiring glass and ceramic multilayer microcircuit substrate and preparation method thereof | |
| CN106904953B (en) | High-thermal-expansion-coefficient ceramic material for high-density packaging and preparation method thereof | |
| CN109206124B (en) | Low-temperature co-fired ceramic dielectric material and preparation method thereof | |
| CN110436894B (en) | Low-dielectric-constant LTCC material and preparation method thereof | |
| CN104672785A (en) | Epoxy molding compound and preparation method thereof | |
| CN108558215A (en) | A kind of High strength low heat expansion coefficient micro crystal glass and preparation method thereof | |
| CN111574212A (en) | Low-temperature sintered low-dielectric microwave ceramic material and preparation method thereof | |
| CN110357597A (en) | High thermal expansion ceramic baseplate material of a kind of calcium borosilicate system and preparation method thereof | |
| CN108610035A (en) | High thermal expansion ceramic baseplate material of high intensity and preparation method thereof | |
| CN106045323B (en) | A kind of high thermal expansion coefficient ceramic material and preparation method thereof | |
| CN108735343A (en) | A kind of conductive silver paste and preparation method thereof for low-temperature co-fired ceramic substrate | |
| CN110128114B (en) | Low-temperature co-fired ceramic dielectric material and preparation method thereof | |
| CN112299825A (en) | Preparation method of low dielectric low temperature co-fired ceramic material | |
| CN103553558B (en) | Polynary borosilicate glass+aluminium nitride low-temperature co-burning ceramic material and preparation method thereof | |
| CN105347781A (en) | Ceramic material and preparation method thereof | |
| CN108314327B (en) | Ce-doped low-temperature co-fired ceramic material and preparation method thereof | |
| CN110342915A (en) | A kind of high thermal expansion calcium borosilicate base ceramic packaging material and preparation method thereof | |
| CN108962422A (en) | A kind of conductive silver paste and preparation method thereof for LTCC ceramic substrate | |
| CN102898027B (en) | Ceramic powder for electronic component packaging material and production method for ceramic powder | |
| CN107056277B (en) | Low-temperature sintered medium-dielectric-constant microwave dielectric material and preparation method thereof | |
| CN106220176A (en) | A kind of diamond/ceramic composite substrate material and preparation method thereof | |
| CN108424132B (en) | High-thermal-expansion high-strength ceramic packaging material and preparation method thereof | |
| CN103979941B (en) | Low-temperature co-fired ceramic and preparation method thereof | |
| CN114974650A (en) | Gold inner electrode conductor slurry for matching LTCF/LTCC composite structure substrate, preparation method and application | |
| CN109305805A (en) | Electronic component ceramic powder used for packing material and its production method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |