CN108604616B - Method for visualizing defects in semi-finished CdTe thin film solar cell - Google Patents
Method for visualizing defects in semi-finished CdTe thin film solar cell Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present application relates to a method for process monitoring and inspection of CdTe thin film solar cell (10) production processes in order to visually identify defects caused by previous process steps. The metal ion solution (15) treatment of the semi-finished CdTe thin film solar cell (10) in combination with simultaneous irradiation of the surface of the semi-finished CdTe solar cell (10) enables visual identification of defects and correlation with previous process steps.
Description
Technical Field
The present application relates to a method for process monitoring and inspection of a CdT thin-film solar cell production process in order to visually identify defects caused by previous process steps.
Background
In the prior art, cdTe solar cells have the following structure: on a glass substrate, a Transparent Conductive Oxide (TCO) layer is deposited as a front contact. The TCO layer may include a high resistance buffer layer that helps minimize shunting effects in the solar cell. Here, a layer of cadmium sulfide (CdS) is deposited, and a layer of cadmium telluride (CdTe) is deposited thereon. Finally, a metal layer, such as molybdenum, nickel vanadium, tantalum, titanium, tungsten, gold or any composition or compound containing one of these elements, is applied for collecting the charge carriers. This structure is referred to as the upper layer configuration.
The prior art thin film CdTe solar cell production process includes further process steps, such as CdCl 2 Activation and/or CuCl 2 And (6) processing. Invisible defects, such as pinholes, particles and agglomerates, can be caused by all steps of the thin film CdTe solar cell production process. Defects can lead to shunting and/or power reduction of CdTe thin film solar cells. Prior art methods for measuring and identifying shunt effects are current-voltage characteristics and/or electrical and photoluminescence measurements. These methods are limited to thin film CdTe solar cells or small size CdTe solar cells that complete all process steps. Furthermore, no dependency of the process steps is caused by the results of the aforementioned measuring methods.
Disclosure of Invention
It is an object of the present invention to provide a method for process monitoring and inspection of CdTe thin film solar cell production processes, wherein the method enables visual identification of defects (e.g. pinholes, particles, lumps) and is related to previous process steps.
This object is achieved by a method according to claim 1. Advantageous embodiments are disclosed in the dependent claims.
The method according to the application comprises the following steps: providing a semi-finished CdTe solar cell, applying a metal ion solution to the CdTe surface while irradiating the semi-finished CdTe solar cell, removing the metal ion solution from the semi-finished CdTe solar cell and visually inspecting the metal ion solution treated semi-finished CdTe solar cell by an operator and/or an optical microscope. The semi-finished CdTe solar cell comprises a CdS layer and a CdTe layer, wherein the surface of the CdTe layer opposite to the CdS layer forms the surface of the semi-finished CdTe solar cell. As known in the art, the semi-finished CdTe solar cell further comprises a substrate and a front contact or a front contact sequence. The CdS layer, cdTe layer and front contact layer or layer sequence are formed by methods known in the art.
The metal ion solution can be applied to the surface of the semi-finished CdTe solar cell by methods known in the art, such as, but not limited to:
immersing the semi-finished CdTe solar cell (or the surface of the semi-finished CdTesolar cell) in a metal ion solution contained in a container,
-spraying of the coating material,
-a spin-coating process,
sponge roller coating, etc.
The metal ion solution may be an aqueous solution of a metal salt, for example a metal chloride, metal sulphate, metal nitrate, metal phosphate, metal halide and metal pseudohalide, such as CuCl 2 、AgCl 3 、PdCl 2 、PtCl 4 、CuSO 4 ，Ag 2 SO 4 、Cu 3 (NO 3 ) 2 、AgNO 3 、Cu 3 (PO 4 ) 2 、Ag 3 PO 4 、CuBr 2 AgBr, cul or CuCN. The metal ion solution may further comprise a complexing agent, such as ammonia solution, sodium thiosulfate solution, potassium cyanide solution, ethylenediamine tetraacetic acid, phosphonate or 1-hydroxyethylidene-1, 1-diphosphonic acid. The metal ion solution may additionally further contain dilute hydrochloric acid or phosphoric acid.
The concentration of metal ions in the metal ion solution may be between 0.1mmol and 50mmol, preferably between 1mmol and 10 mmol. The first period of time during which the metal ion solution is present on the surface of the semifinished CdTe solar cell, for example, the first period of time during which the semifinished CdTe solar cell (or the surface of the semifinished CdTe solar cell) is immersed in the metal ion solution, may be in the range of 5 to 300 seconds, preferably 30 to 60 seconds.
Furthermore, the temperature of the semi-finished CdTe solar cell is controlled within the range between 15 ℃ and 80 ℃ during this period of time, the metal ion solution is applied to the surface of the semi-finished CdTe solar cell.
According to the present application, the semi-finished CdTe solar cell is irradiated for a second period of time while the metal ion solution is present on the surface of the semi-finished CdTe solar cell. The second period of time of simultaneous irradiation of the semi-finished CdTe solar cell is the period of time between the beginning of the step of applying the metal ion solution and the end of the step after the removal of the metal ion solution (according to the first period of time). The second time period may be equal to the first time period, i.e. the irradiation of the semi-finished CdTe solar cell during the whole process in which the metal ion solution is present at least at the surface of the semi-finished CdTe solar cell, or may be shorter than the first time period, i.e. only for part of the duration of the first time period, at least half of the first time period.
The irradiation generates electron-hole pairs which will be separated at the pn junction under the influence of the intrinsic electric field of the CdTe solar cell. Pinholes or other defects caused by previous process steps, e.g. CdS/CdTe deposition or CdCl 2 In the case of the current micro-pits caused by the activation treatment, the electrons generated can move along the micro-pits to the surface of the semi-finished CdTe solar cell. The reaction of the electrons and the metal ions at the surface of the semi-finished CdTe solar cell causes the electrodeposition of a metal on the surface of the semi-finished CdTe solar cell, which will be visible at the location of the current micro-pits.
By "simultaneous irradiation" is meant that there is more irradiation during the treatment of the metal ion solution than is due to ambient light. The "simultaneous illumination" is additionally provided to these illumination conditions by an illumination source and provides additional light with a brightness (luminous flux per unit area) in the range of 5000lx to 200000 lx.
The light simultaneously irradiated by the semifinished CdTe solar cell has a wavelength in the absorption region of the CdTe solar cell, and is preferably in the range of 300 to 900 nm.
The metal ion solution may be removed from the surface of the semi-finished CdTe solar cell by removing the semi-finished CdTe solar cell from the metal ion solution held in the container and/or by purging, rinsing with a cleaning solution, drying, or combinations thereof, or by other methods known in the art.
Visual inspection may be performed by a human operator and/or an optical microscope, or used in conjunction with an image analysis system, to enable identification of defect structures and correlations to cause processing steps.
The method according to the present application is therefore suitable for monitoring the production process of CdTe thin film solar cells and enables visual identification of defects and efficient resolution of problems by limiting the process steps that may arise.
Drawings
Fig. 1 schematically shows an exemplary processing sequence of a method according to the present application.
Fig. 2 schematically shows an embodiment of the method according to the application, wherein, after steps S40 and S50, wherein the application of the metal ion solution is performed by immersing the semifinished CdTe solar cell in the metal ion solution while irradiating.
Detailed Description
The method according to the invention is explained in the following exemplary embodiments, wherein the figures are not intended to imply a limitation of the illustrated embodiments.
Fig. 1 shows a processing sequence of a method according to the present application. First, a semi-finished CdTe solar cell having the above-mentioned surface is provided in step S10. In the next step S20, a metal ion solution is applied to the surface of the semi-finished CdTe solar cell. While the metal ion solution is present on the surface of the semi-finished CdTe solar cell, the semi-finished CdTe solar cell is irradiated (step S30). After the metal ion solution is present on the surface of the semi-finished CdTe solar cell, it is removed in step S40. After step S40, a visual inspection of the surface of the metal ion solution treated semi-finished CdTe solar cell is performed by an operator and/or an optical microscope (step S50).
In fig. 2, one exemplary embodiment of a method according to the present application is schematically shown, wherein the application of the metal ion solution (step S20) is performed by immersing the semi-finished CdTe solar cell (10) having a surface (11) in the metal ion solution (15) while irradiating (step S30) by the irradiation source (14). The metal ion solution (15) contained 1mmol of CuCl 2 Solution, equivalent to 134.45mg of CuCl diluted in 1L of DI-water (deionized water) 2 And held in a container (12). Half ofThe finished CdTe solar cell is supported by a member (13), for example a holder with clamps, immersed in a metal ion solution (15) for 60 seconds and simultaneously irradiated for the entire time, the semi-finished CdTe solar cell being immersed in the metal ion solution, whereby the temperature of the metal ion solution and the semi-finished CdTe solar cell is about 25 ℃ to 30 ℃. Further, the semi-finished CdTe solar cell (10) is irradiated with a halogen lamp (equivalent to a lamp with a power of 400W, a luminous flux of 8548lm, a luminous color of 2900K) with an illuminance of 150000lx using an irradiation source (14) while being immersed in a metal ion solution (15). Before the visual inspection (step S50), the metal ion solution is removed from the semi-finished CdTe solar cell according to the prior art, for example by means of a rinsing and drying device (20) (step S40). The following visual inspection (S50) of the surface (11) of the semi-finished CdTe solar cell (10) is carried out by an operator and/or an optical microscope.
In the example shown in fig. 2, the illumination source (14) is arranged such that the light emitted by the illumination source (14) is irradiated on the surface (11) of the semi-finished CdTe solar cell (10). However, this is only one exemplary arrangement of the illumination unit. Nevertheless, the semi-finished CdTe solar cell can in any case be irradiated on the sunlight side, i.e. on a transparent substrate.
The embodiments of the invention described in the foregoing description are examples given by way of illustration and the invention is now limited thereto. Any modifications, variations, and equivalent arrangements, as well as combinations of embodiments, should be considered to be included within the scope of the present invention.
Reference numerals
10. Semi-finished CdTe solar cell
11. Surface of semi-finished CdTe solar cell
12. Container with a lid
13. Component for immersion
14. Radiation source
15. Metal ion solution
20. Washing and drying device
Claims (6)
1. Method for process monitoring and inspection of CdTe thin film solar cell production processes comprising the steps of:
a) Providing a semi-finished CdTe solar cell comprising a CdS layer and a CdTe layer, wherein a surface of the CdTe layer opposite the CdS layer forms a surface of the semi-finished CdTe solar cell,
b) Applying a metal ion solution to said surface of said semi-finished CdTe solar cell,
c) Irradiating the semi-finished CdTe solar cell simultaneously with b),
d) Removing the metal ion solution from the semi-finished CdTe solar cell, and
e) Visually inspecting the surface of the semi-finished CdTe solar cell by an operator and/or an optical microscope after removal of the metal ion solution;
wherein the semi-finished CdTe solar cell is illuminated light having a wavelength in an absorption region of the CdTe solar cell; the electrons generated by irradiation move along the micro-pits to the surface of the semi-finished CdTe solar cell, the reaction of the electrons and the metal ions at the surface of the semi-finished CdTe solar cell causes the electrodeposition of metal on the surface of the semi-finished CdTe solar cell.
2. The method according to claim 1, characterized in that the metal ion solution is applied by immersing the semifinished CdTe solar cell in the metal ion solution.
3. The method of claim 1, wherein the concentration of metal ions in the metal ion solution is in a range between 0.1mmol and 50 mmol.
4. The method of claim 1, wherein the metal ion solution is applied for a period of time in the range of 5 seconds to 5 minutes.
5. The method of claim 1, wherein the wavelength is in a range of 400 nm to 900 nm.
6. The method according to any of claims 1-5, characterized in that the temperature of the semi-finished CdTe solar cell and the metal ion solution applied to the semi-finished CdTe solar cell is in the range between 15 ℃ and 80 ℃ during a time period.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/112397 WO2018119675A1 (en) | 2016-12-27 | 2016-12-27 | Method for visualizing defects in a semi-finished cdte thin film solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN108604616A CN108604616A (en) | 2018-09-28 |
| CN108604616B true CN108604616B (en) | 2023-03-24 |
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| CN201680074109.7A Active CN108604616B (en) | 2016-12-27 | 2016-12-27 | Method for visualizing defects in semi-finished CdTe thin film solar cell |
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| WO (1) | WO2018119675A1 (en) |
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| JP2005166705A (en) * | 2003-11-28 | 2005-06-23 | Canon Inc | Defect detecting method of insulating film or semiconductor film |
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2016
- 2016-12-27 WO PCT/CN2016/112397 patent/WO2018119675A1/en active Application Filing
- 2016-12-27 CN CN201680074109.7A patent/CN108604616B/en active Active
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| US4144139A (en) * | 1977-11-30 | 1979-03-13 | Solarex Corporation | Method of plating by means of light |
| JPH11274257A (en) * | 1998-03-18 | 1999-10-08 | Shin Etsu Handotai Co Ltd | Method of evaluating defect of semiconductor crystal |
| US6174727B1 (en) * | 1998-11-03 | 2001-01-16 | Komatsu Electronic Metals, Co. | Method of detecting microscopic defects existing on a silicon wafer |
| CN101257059A (en) * | 2007-11-30 | 2008-09-03 | 无锡尚德太阳能电力有限公司 | Method for electrochemical depositing solar cell metallic electrode |
| JP2015220296A (en) * | 2014-05-15 | 2015-12-07 | 信越半導体株式会社 | Contamination evaluation method |
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| CN108604616A (en) | 2018-09-28 |
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