CN108604616A - Method for visualizing defect in semi-finished product CdTe thin film solar cell - Google Patents
Method for visualizing defect in semi-finished product CdTe thin film solar cell Download PDFInfo
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- CN108604616A CN108604616A CN201680074109.7A CN201680074109A CN108604616A CN 108604616 A CN108604616 A CN 108604616A CN 201680074109 A CN201680074109 A CN 201680074109A CN 108604616 A CN108604616 A CN 108604616A
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- Prior art keywords
- semi
- finished product
- solar cells
- metal ion
- ion solution
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- 239000011265 semifinished product Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract 18
- 230000007547 defect Effects 0.000 title abstract description 11
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000012544 monitoring process Methods 0.000 claims abstract description 5
- 238000007689 inspection Methods 0.000 claims abstract description 4
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract description 7
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 61
- 210000004027 cell Anatomy 0.000 description 53
- 239000000243 solution Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 6
- 230000000007 visual effect Effects 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 3
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- -1 metal chloride Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010129 solution processing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical group OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910002666 PdCl2 Inorganic materials 0.000 description 1
- 229910019029 PtCl4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 229910000153 copper(II) phosphate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012263 liquid product Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229910001463 metal phosphate Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- LGAWFGCTQRLGQE-UHFFFAOYSA-N octan-3-ylphosphonic acid Chemical class CCCCCC(CC)P(O)(O)=O LGAWFGCTQRLGQE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 125000002577 pseudohalo group Chemical group 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 229910000161 silver phosphate Inorganic materials 0.000 description 1
- 229910000367 silver sulfate Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
This application involves the methods of process monitoring and inspection for CdTe thin film solar cell (10) production process, visually to identify the defect caused by previous process steps.Metal ion solution (15) processing of semi-finished product CdTe thin film solar cell (10) combines while irradiating the surfaces of semi-finished product CdTe solar cells (10) and can visually identify defect and be associated with previous process steps.
Description
Technical field
This application involves a kind of method of process monitoring and inspection for CdT thin-film solar cells production processes, with
Just the defect caused by previous process steps is visually identified.
Background technology
In the prior art, CdTe solar cells have following structure：In glass bottom lining, transparent conductive oxide is deposited
Layer (TCO) is used as preceding contact.Tco layer may include high resistance buffer layer, help to make the shunt effect in solar cell
It minimizes.Here, one layer of cadmium sulfide (CdS) of deposition, and one layer of cadmium telluride (CdTe) is deposited on it.Finally, apply metal layer
Such as molybdenum, nickel vanadium, tantalum, titanium, tungsten, gold or comprising one any composition or compound in these elements, for collecting electricity
Charge carrier.The structure is referred to as upper-layer configured.
The film CdTe manufacture of solar cells processes of the prior art include further processing step, such as CdCl2Activation
And/or CuCl2Processing.Invisible defect can pass through film CdTe manufacture of solar cells mistakes such as pin hole, particle and agglomerate
All steps of journey cause.Defect can cause the shunting of CdTe thin film solar cell and/or power to reduce.For measuring and knowing
The art methods of other shunt effect are I-E characteristic and/or electricity and photoluminescence measurement., these methods have been limited to
At the film CdTe solar cells or small size CdTe solar cells of all process steps.In addition, by above-mentioned
Measurement method as a result, the correlation of process steps will not be caused.
Invention content
The object of the present invention is to provide a kind of process monitoring for CdTe thin film manufacture of solar cells process and inspections
Method, wherein this method can visually identify defect (such as pin hole, particle, agglomerate) and with previous process steps phase
It closes.
The purpose is realized by according to the method for claim 1.Advantageous embodiment is in the dependent claims
It is open.
Included the following steps according to the present processes：Semi-finished product CdTe solar cells are provided, by metal ion solution
It is applied to the surfaces CdTe and irradiates semi-finished product CdTe solar cells simultaneously, metal is removed from semi-finished product CdTe solar cells
Solion simultaneously visually examines the semi-finished product CdTe of metal ion solution processing too by operating personnel and/or light microscope
Positive energy battery.Semi-finished product CdTe solar cells include CdS layer and CdTe layer, the wherein surface opposite with CdS layer of CdTe layer
Form the surface of semi-finished product CdTe solar cells.As be known in the art, semi-finished product CdTe solar cells are further
Including substrate and preceding contact layer or preceding contact sequence of layer.CdS layer, CdTe layer and preceding contact layer or sequence of layer pass through in the prior art
Known method is formed.
Metal ion solution can be applied to the table of semi-finished product CdTe solar cells by method known in the art
Face, the method is such as, but not limited to：
Semi-finished product CdTe solar cells (or surface of semi-finished product CdTesolar batteries) are immersed and are accommodated in a reservoir
Metal ion solution in,
Spraying,
Rotary coating,
Sponge roller coating etc..
Metal ion solution can be the aqueous solution of metal salt, such as metal chloride, metal sulfate, metal nitrate
Salt, metal phosphate, metal halide and metal pseudohalide, such as CuCl2、AgCl3、PdCl2、PtCl4、CuSO4,
Ag2SO4、Cu3(NO3)2、AgNO3、Cu3(PO4)2、Ag3PO4、CuBr2, AgBr, Cul or CuCN.Metal ion solution can be further
Including complexing agent, for example, ammonia solution, hypo solution, potassium cyanide solution, ethylenediamine, ethylenediamine tetra-acetic acid, phosphonate or
1- hydroxy ethylene -1,1- di 2 ethylhexyl phosphonic acids.In addition metal ion solution can further contain dilute hydrochloric acid or phosphoric acid.
In metal ion solution the concentration of metal ion can between 0.1mmol and 50mmol, preferably in 1mmol and
Between 10mmol.There are the first time period of metal ion solution on the surface of semi-finished product CdTe solar cells, for example, half at
Product CdTe solar cells (or surface of semi-finished product CdTe solar cells) immerse the first time period in metal ion solution,
It can be at 5 seconds to 300 seconds, in the range of preferably 30 seconds to 60 seconds.
In addition, during the period by the control of the temperature of semi-finished product CdTe solar cells between 15 DEG C and 80 DEG C
In range, metal ion solution is applied to the surface of semi-finished product CdTe solar cells.
According to the application, while on the surface that metal ion solution is present in semi-finished product CdTe solar cells, half
The illuminated second time period of finished product CdTe solar cells.Irradiating the second time period of semi-finished product CdTe solar cells simultaneously is
Start in the step of applying metal ion solution and terminates the step of removing after metal ion solution (according at the first time
Section) between period.Second time period can be equal to first time period, i.e., in metal ion solution present at least at semi-finished product
Semi-finished product CdTe solar cells are irradiated during the entire process of at the surface of CdTe solar cells, or can be than at the first time
Section it is short, i.e., only the section duration of first time period, first time period at least half.
Irradiation generates electron-hole pair, these electron-hole pairs will be in the effect of the built-in field of CdTe solar cells
Under at pn-junction detach.In the pin hole caused by previous process steps or other defect, such as CdS/CdTe depositions or CdCl2It is living
In the case of changing current micro- hole caused by processing, the electronics of generation can be moved to semi-finished product CdTe solar cells along micro- hole
Surface.The reaction of electronics and metal ion at semi-finished product CdTe solar cell surfaces causes metal in the semi-finished product CdTe sun
Electro-deposition on the surface of energy battery, this will be visible at the position in current micro- hole.
" irradiating simultaneously " means exist more than the irradiation generated due to ambient light during metal ion solution processing
Irradiation." irradiating simultaneously " is these lighting conditions to be in addition supplied to by irradiation source, and provide to have and be arrived in 5000lx
The additional optical of brightness (luminous flux of per unit area) within the scope of 200000lx.
The light that semi-finished product CdTe solar cells irradiate simultaneously has wavelength in the absorption region of CdTe solar cells,
And preferably in the range of 300nm to 900nm.
By from keeping taking out semi-finished product CdTe solar cells in metal ion solution in a reservoir and/or by blowing
Wash, rinsed with clean solution, is dry or combinations thereof, or by other methods known in the art, it can be by metal ion
Solution is removed from the surface of semi-finished product CdTe solar cells.
Visual verification can be carried out by human operator and/or light microscope, or combined and make with image analysis system
With so as to identify defect sturcture and correlation to cause processing step.
Therefore, it is suitable for monitoring the production process of CdTe thin film solar cell according to the present processes and passes through limit
System may caused by process steps realize the visual recognition of defect and effective solve the problems, such as.
Description of the drawings
Fig. 1 schematically shows the exemplary processing order according to the present processes.
Fig. 2 schematically shows one embodiment according to the present processes, wherein in step S40 and step S50
Later, the application of wherein metal ion solution is by immersing in metal ion solution simultaneously semi-finished product CdTe solar cells
Irradiation and carry out.
Specific implementation mode
It is explained in following exemplary embodiment according to the method for the present invention, wherein attached drawing is not intended to imply that shown
The limitation of embodiment.
Fig. 1 shows the processing sequence according to the present processes.First, providing in step slo has above-mentioned surface
Semi-finished product CdTe solar cells.In following step S20, metal ion solution is applied to the semi-finished product CdTe sun
The surface of energy battery.While on the surface that metal ion solution is present in semi-finished product CdTe solar cells, irradiation half at
Product CdTe solar cells (step S30).On the surface that metal ion solution is present in semi-finished product CdTe solar cells it
Afterwards, it removes it in step s 40.After the step s 40, it is executed to metal ion by operating personnel and/or light microscope
The visual verification (step S50) on the surface of the semi-finished product CdTe solar cells of solution treatment.
In fig. 2, it is schematically shown according to exemplary embodiment of the present processes, wherein metal ion
The application (step S20) of solution is molten by that will have the semi-finished product CdTe solar cells (10) on surface (11) to immerse metal ion
It is executed by irradiation source (14) irradiation (step S30) while in liquid (15).Metal ion solution (15) includes 1mmol
CuCl2Solution is equivalent to the diluted 134.45mg CuCl in 1L DI- water (deionized water)2And it is maintained in container (12).
Semi-finished product CdTe solar cells are supported by component (13), such as the clamper with fixture immerses in metal ion solution (15)
It simultaneously irradiates the entire time simultaneously within 60 seconds, semi-finished product CdTe solar cells is immersed into metal ion solution, thus metal ion is molten
The temperature of liquid and semi-finished product CdTe solar cells is about 25 DEG C to 30 DEG C.Further, using irradiation source (14), illumination is
The halogen lamp (being equivalent to the lamp that power is 400W, luminous flux 8548lm, luminescent color are 2900K) of 150000lx is to semi-finished product
CdTe solar cells (10) are irradiated, while being dipped in metal ion solution (15).(the step before visual verification
S50), according to the prior art, for example, by rinse and drying device (20) remove metal from semi-finished product CdTe solar cells
Solion (step S40).The following visual verification (S50) on the surface (11) of semi-finished product CdTe solar cells (10) is by operating
Personnel and/or light microscope execute.
In the illustrated example shown in fig. 2, irradiation source (14) is arranged such that the light emitted by irradiation source (14) is radiated at half
On the surface (11) of finished product CdTe solar cells (10).However, this is only an exemplary arrangement of illumination unit.Although
In this way, semi-finished product CdTe solar cells can irradiate under any circumstance in sunlight side, i.e., on a transparent substrate.
The embodiment of the present invention described in description in front is the example provided by way of example, and the present invention
This is only limitted to now.Any modification, variation and the combination of equivalent arrangements and embodiment should be to be considered as included in the model of the present invention
In enclosing.
Reference numeral
10 semi-finished product CdTe solar cells
The surface of 11 semi-finished product CdTe solar cells
12 containers
13 component for immersion
14 irradiation sources
15 metal ion solutions
20 rinse drying device
Claims (7)
1. the method for the process monitoring and inspection for CdTe thin film manufacture of solar cells process, includes the following steps：
A) it includes CdS layer and the semi-finished product CdTe solar cells of CdTe layer to provide, wherein the CdTe layer with the CdS layer
Opposite surface forms the surface of the semi-finished product CdTe solar cells,
B) metal ion solution is applied to the surface of the semi-finished product CdTe solar cells,
C) the semi-finished product CdTe solar cells are irradiated while b),
D) metal ion solution is removed from the semi-finished product CdTe solar cells, and
E) semi-finished product are visually examined by operating personnel and/or light microscope after removing the metal ion solution
The surface of CdTe solar cells.
2. according to the method described in claim 1, it is characterized in that, by the way that the semi-finished product CdTe solar cells are immersed institute
It states and applies the metal ion solution in metal ion solution.
3. according to the method described in claim 1, it is characterized in that, metal ion in the metal ion solution it is described dense
Degree can be between 0.1mmol and 50mmol.
4. according to the method described in claim 1, it is characterized in that, the illuminated light of the semi-finished product CdTe solar cells exists
There is wavelength in the absorption region of the CdTe solar cells.
5. according to the method described in claim 4, it is characterized in that, the wavelength of the light 400nm to 900nm range
It is interior.
6. according to the method described in claim 1, it is characterized in that, applying the period of the metal ion solution in 5 seconds
To in the range of 5 minutes.
7. according to any method of the preceding claims, which is characterized in that the semi-finished product CdTe solar cells
With the temperature of the metal ion solution during the period between 15 DEG C to 80 DEG C, the metal ion
Solution is applied to the semi-finished product CdTe solar cells.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/112397 WO2018119675A1 (en) | 2016-12-27 | 2016-12-27 | Method for visualizing defects in a semi-finished cdte thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108604616A true CN108604616A (en) | 2018-09-28 |
| CN108604616B CN108604616B (en) | 2023-03-24 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680074109.7A Active CN108604616B (en) | 2016-12-27 | 2016-12-27 | Method for visualizing defects in semi-finished CdTe thin film solar cell |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108604616B (en) |
| WO (1) | WO2018119675A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144139A (en) * | 1977-11-30 | 1979-03-13 | Solarex Corporation | Method of plating by means of light |
| JPH11274257A (en) * | 1998-03-18 | 1999-10-08 | Shin Etsu Handotai Co Ltd | Method of evaluating defect of semiconductor crystal |
| US6174727B1 (en) * | 1998-11-03 | 2001-01-16 | Komatsu Electronic Metals, Co. | Method of detecting microscopic defects existing on a silicon wafer |
| CN101257059A (en) * | 2007-11-30 | 2008-09-03 | 无锡尚德太阳能电力有限公司 | Method for electrochemical depositing solar cell metallic electrode |
| JP2015220296A (en) * | 2014-05-15 | 2015-12-07 | 信越半導体株式会社 | Contamination evaluation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3558818B2 (en) * | 1997-03-31 | 2004-08-25 | 株式会社東芝 | Method and apparatus for evaluating defect of insulating film |
| JP2000082727A (en) * | 1998-09-04 | 2000-03-21 | Toshiba Corp | Method for evaluating fault of insulating film |
| JP2005166705A (en) * | 2003-11-28 | 2005-06-23 | Canon Inc | Defect detecting method of insulating film or semiconductor film |
| CN106252432A (en) * | 2016-09-28 | 2016-12-21 | 中山瑞科新能源有限公司 | A kind of cadmium telluride preparation method of solar battery reducing defect concentration |
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- 2016-12-27 WO PCT/CN2016/112397 patent/WO2018119675A1/en active Application Filing
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144139A (en) * | 1977-11-30 | 1979-03-13 | Solarex Corporation | Method of plating by means of light |
| JPH11274257A (en) * | 1998-03-18 | 1999-10-08 | Shin Etsu Handotai Co Ltd | Method of evaluating defect of semiconductor crystal |
| US6174727B1 (en) * | 1998-11-03 | 2001-01-16 | Komatsu Electronic Metals, Co. | Method of detecting microscopic defects existing on a silicon wafer |
| CN101257059A (en) * | 2007-11-30 | 2008-09-03 | 无锡尚德太阳能电力有限公司 | Method for electrochemical depositing solar cell metallic electrode |
| JP2015220296A (en) * | 2014-05-15 | 2015-12-07 | 信越半導体株式会社 | Contamination evaluation method |
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| CN108604616B (en) | 2023-03-24 |
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