CN108604589A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing method Download PDFInfo
- Publication number
- CN108604589A CN108604589A CN201680081182.7A CN201680081182A CN108604589A CN 108604589 A CN108604589 A CN 108604589A CN 201680081182 A CN201680081182 A CN 201680081182A CN 108604589 A CN108604589 A CN 108604589A
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- China
- Prior art keywords
- pressing plate
- semiconductor device
- insulating substrate
- silica hydrogel
- sealing resin
- Prior art date
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- Granted
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Classifications
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Obtain by high temperature, low temperature when, when the use of voltage being high voltage inhibit the generation of bubble, the stripping of Silica hydrogel and insulating substrate, the insulation performance caused by thermal cycle can be inhibited to deteriorate, it is ensured that the semiconductor device of insulation performance.It is characterized in that, having：Insulating substrate (5), in upper surface equipped with semiconductor element (4)；Parent plate (1), is joined to the lower surface of insulating substrate (5)；Housing parts (2) surround insulating substrate (5), connect with the face of the junction isolation substrate (5) of parent plate (1)；Sealing resin (8) is filled by the region of parent plate (1) and housing parts (2) encirclement, is sealed to insulating substrate (5)；Cover (9), it is opposite with the surface of sealing resin (8), it is bonded with housing parts (2)；And pressing plate (10), lower surface and a part for side and the surface of sealing resin (8) are touched, upper surface is highlightedly bonded from the face opposite with the surface of sealing resin (8) of cover (9).
Description
Technical field
The present invention relates to the sealing structures of semiconductor device made of being sealed to power semiconductor with sealing resin
It makes and its manufacturing method.
Background technology
Electrical path is set to become the semiconductor element of longitudinal type of element for the purpose of corresponding with high voltage, high current
Commonly referred to as (such as (Insulated Gate Bipolar Transistor, insulated gate are double by IGBT for power semiconductor
Gated transistors), MOSFET (Metal Oxide Semiconductor Field Effect Transistor, metal oxide
Semiconductor field effect transistor), bipolar transistor, diode etc.).Power semiconductor is installed in circuit board simultaneously
Semiconductor device made of being encapsulated using sealing resin is used in the extensive field such as industrial equipment, automobile, railway.In recent years
Come, with the high performance of the equipment equipped with semiconductor device, the increase of rated voltage and rated current, temperature in use model
The requirement of the such high performance to semiconductor device of expansion (high temperature, low temperature) enclosed improves.
About the packaging structure of semiconductor device, be referred to as shell construction is mainstream, and the semiconductor device of shell type is
The construction of shell is bonded across insulating substrate installation power semiconductor element on heat transmission parent plate and for parent plate.Installation
Power semiconductor inside semiconductor device is connect with main electrode.In the connection of the power semiconductor and main electrode
In, it uses closing line (bonding wire).For the purpose of defective insulation when preventing from applying high voltage, generally, as partly leading
The sealing resin of body device is used with the gel filler for the insulating properties that Silica hydrogel (silicone gel) is representative.
It in previous semiconductor device, discloses with the semiconductor device constructed as follows, in this configuration, in order to anti-
The only fracture of the closing line caused by the fluctuating of Silica hydrogel has the pressing being inserted into a manner of touching with the upper surface of Silica hydrogel
Lid, and in the side for pressing gland, be provided with the inner wall of periphery shell can be up and down protrusion (such as the patent document that engages
1)。
In addition, also disclosing with the semiconductor device constructed as follows, in this configuration, has covering Silica hydrogel upper table
Face and its end are fixed to the cap of shell, in the temperature range for allowing to use, the upper surface at least 80% of Silica hydrogel
Connect above with cap (such as patent document 2).
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2000-311970 bulletins (page 3, the 1st figure)
Patent document 2：Japanese Unexamined Patent Publication 2014-130875 bulletins (page 4, the 1st figure)
Invention content
Usually, temperature is higher, and the dissolvable amount of the gas into Silica hydrogel is fewer.Therefore, make in semiconductor device
With temperature range expansion when lower use Silica hydrogel at higher temperature, the gas not being completely dissolved in Silica hydrogel forms bubble.It is sending out
The place of raw such bubble, the insulated enclosure effect that the Silica hydrogel that is not used plays, so the insulating properties of semiconductor device
It can deterioration.
In order to inhibit gassing, stripping in the Silica hydrogel, the internal stress of Silica hydrogel is made to become compression stress.
The reason for this is that tensile stress becomes the driving force for making bubble, stripping expand, develop.
However, in semiconductor device described in Patent Document 1, even if in a manner of touching with the upper surface of sealing resin
Gland is pressed in insertion, due to press gland be capable of opposite outer circumference shell inner wall it is up and down, so in power semiconductor in height
Under temperature when action, sealing resin is thermally expanded and will can easily be jacked up by gland, so the generation of inhibition bubble will not occur
Compression stress, semiconductor device insulation performance deterioration.
On the other hand, in semiconductor device described in Patent Document 2, the end of cap is fixed to shell, so
Silica hydrogel thermally expands and can not jack up pressing plate when high temperature, so the internal stress of Silica hydrogel becomes compression stress, bubble
Occur to be suppressed.However, in low temperature, since the end of cap is fixed to shell, so wanting the Silica hydrogel quilt being heat-shrinked
It is stretched to cap, so the internal stress of Silica hydrogel becomes tensile stress.It is the shape of tensile stress in the internal stress of Silica hydrogel
Under state, when having small bubble in Silica hydrogel, due to tensile stress, bubble expands.
In addition, in the interface of Silica hydrogel and insulating substrate, the interface of Silica hydrogel and power semiconductor, gel and conducting wire
Interface in have the weak part of contiguity power in the case of, due to tensile stress, generate the stripping at interface or stripping made to develop.
The bubble as generation, stripping place, the insulated enclosure effect that the Silica hydrogel that is not used plays, so semiconductor device
Insulation performance deterioration.
In turn, when semiconductor device becomes higher voltage using voltage, though bubble, stripping it is smaller, still
It is easy to generate insulation breakdown, so the insulation performance deterioration of module.
In this way, in previous semiconductor device, there are the following problems：Expand in the use temperature range of semiconductor device
And it is at higher temperature, under low temperature use the case where, semiconductor device using voltage become high voltage in the case of, semiconductor device
Insulation performance deterioration.
The present invention be in order to solve the problems, such as to complete as above-mentioned, even if its object is to obtain it is a kind of at high temperature,
When low temperature, using voltage being high voltage, passes through and inhibit the generation of bubble, the stripping of Silica hydrogel and insulating substrate, insulation performance
The semiconductor device that will not be deteriorated.
The semiconductor device of the present invention is characterized in that having：Insulating substrate, in upper surface equipped with semiconductor element；
Parent plate is joined to the lower surface of the insulating substrate；Housing parts surround the insulating substrate, with connecing for described matrix plate
The face for closing the insulating substrate connects；Sealing resin is filled by the region of described matrix plate and housing parts encirclement, right
The insulating substrate is sealed；Cover, it is opposite with the surface of the sealing resin, it is bonded with the housing parts；And
The surface of a part for pressing plate, lower surface and side and the sealing resin is touched, and upper surface is from the cover
Opposite face highlightedly bonds with the surface of the sealing resin.
According to the present invention, by being arranged between the sealing resin and lid inside semiconductor device and sealing resin contiguity
Pressing plate can generate compression stress on the direction of insulating substrate in thermal cycle for sealing resin.As a result, energy
Enough improve the reliability of the semiconductor device under thermal cycle.
Description of the drawings
Fig. 1 is the profile construction schematic diagram for showing the semiconductor device in embodiments of the present invention 1.
Fig. 2 is profile construction schematic diagram when showing the low temperature of the semiconductor device in embodiments of the present invention 1.
Fig. 3 is profile construction schematic diagram when showing the high temperature of the semiconductor device in embodiments of the present invention 1.
Fig. 4 is profile construction schematic diagram when showing other low temperature of the semiconductor device in embodiments of the present invention 1.
Fig. 5 is the vertical view organigram for showing the semiconductor device in embodiments of the present invention 1.
Fig. 6 is the profile construction schematic diagram for showing other semiconductor devices in embodiments of the present invention 1.
Fig. 7 is the vertical view organigram for showing other semiconductor devices in embodiments of the present invention 1.
Fig. 8 is the profile construction schematic diagram for the manufacturing process for showing the semiconductor device in embodiments of the present invention 1.
Fig. 9 is the profile construction schematic diagram for the manufacturing process for showing the semiconductor device in embodiments of the present invention 1.
Figure 10 is the profile construction schematic diagram for the manufacturing process for showing the semiconductor device in embodiments of the present invention 1.
Figure 11 is the profile construction schematic diagram for the manufacturing process for showing the semiconductor device in embodiments of the present invention 1.
Figure 12 is the profile construction schematic diagram for showing lid and pressing plate in embodiments of the present invention 1.
Figure 13 is the profile construction schematic diagram for showing other lids and pressing plate in embodiments of the present invention 1.
Figure 14 is the profile construction schematic diagram for showing other lids and pressing plate in embodiments of the present invention 1.
Figure 15 is the profile construction schematic diagram of previous semiconductor device.
(reference sign)
1：Parent plate；2：Shell；3：Grafting material；4：Power semiconductor；5：Insulating substrate；6：Closing line；7：Electricity
Extreme son；8：Silica hydrogel；9：Lid；10：Pressing plate；51、53：Electrode pattern；52：Insulating layer；100、200、300：Semiconductor fills
It sets；101：Protrusion；102：Stick；103：Plate.
Specific implementation mode
Hereinafter, with reference to the accompanying drawings, the embodiment for the semiconductor device that the present invention will be described in detail.In addition, the present invention does not limit
In narration below, can suitably be changed in the range for not departing from the gist of the invention.
Embodiment 1.
Fig. 1 is the profile construction schematic diagram for showing the semiconductor device in embodiments of the present invention 1.It partly leads in the figure
Body device 100 has parent plate 1, housing parts 2, grafting material 3, the power semiconductor 4 as semiconductor element, insulation
Substrate 5, closing line 6, terminal 7, the Silica hydrogel 8 as sealing resin, the lid 9 as cover, pressing plate 10, electrode pattern
51,53, insulating layer 52.
About insulating substrate 5, lower surface (back side) side of insulating substrate 5 is joined to parent plate 1 using grafting material 3.
Insulating substrate 5 has insulating layer 52 and electrode pattern 51,53.About insulating substrate 5, in upper surface (surface) shape of insulating layer 52
Electrode pattern 53 is formed at electrode pattern 51, in the lower surface (back side) of insulating substrate 5.In the upper table for being formed in insulating substrate 5
On the electrode pattern 51 of surface side, power semiconductor 4 is bonded with the grafting materials such as solder 3.Here, for example, power semiconductor
Element 4 uses the Electric controls semiconductor elements such as MOSFET, IGBT of control high current, the diode of reflux.
In addition, about insulating substrate 5, with the grafting materials such as solder 3 by the electrode pattern 53 of the lower face side of insulating substrate 5
It is adhered to parent plate 1.In addition, formation and as bottom plate and by parent plate 1 be configured at around parent plate 1 by the parent plate 1
The region (hereinafter referred to as shell) that housing parts 2 surround.
For the purpose of the insulating properties of inside for ensuring semiconductor device 100, filling is as sealing resin inside housings
Silica hydrogel 8.Silica hydrogel 8 is filled to power semiconductor 4 and closing line 6 in the shell and is sealing into Silica hydrogel 8
Height.
To power semiconductor 4, connect for the electrode of power semiconductor 4 to be electrically connected to external closing line
6 equal wirings.In turn, the closing line 6 with terminal 7 by connecting, and is electrically connected with hull outside.Terminal 7 is directed to 2 quilt of housing parts
Embedded molding (insert molding) is externally embedded to molding (outsert molding).
Lid 9 is configured at the upper side (opposite side to connect with parent plate 1) of housing parts 2.Pass through lid 9, separating semiconductor
Device 100 it is inside and outside, prevent dust etc. from entering the inside of semiconductor device 100.By the bonding agent (not shown) of lid 9
Or screw is (not shown) fixed to housing parts 2.
Be connected to the lower surface of the lid 9 of the enclosure interior side as lid 9, the surface side opposite with Silica hydrogel 8 of lid 9 and configure
Pressing plate 10.Pressing plate 10 is contiguously configured with Silica hydrogel 8.Pressing plate 10 makes pressing plate 10 by highlightedly being configured from lid 9
Contiguously configured with Silica hydrogel 8, to by pressing plate 10 to Silica hydrogel 8 from pressing plate 10 on the direction of insulating substrate 5
Generate compression stress.
Hereinafter, each integral part is described in detail.
As power semiconductor 4, in the semiconductor element using the semi-conducting material acted at 150 DEG C or more
When, effect is big.Especially, the material shape as silicon carbide (SiC), gallium nitride (GaN) based material or diamond (C) is being applied
At, band gap is bigger than silicon (Si), so-called wide bandgap semiconductor materials when, effect is big.
In addition, in Fig. 1, as illustration, in the semiconductor device 100 sealed at one, carrying 2 semiconductor power elements
Part 4, but as the number of power semiconductor 4, it is without being limited thereto, can according to use purposes, circuit structure, carry necessary
Number power semiconductor 4.
As grafting material 3, using solder, but not limited to this, silver, silver alloy can also be used, power semiconductor is engaged
Element 4 and electrode pattern 51, electrode pattern 53 and parent plate 1.About electrode pattern 51,53, parent plate 1 and terminal 7, lead to
Often, as materials'use copper, but not limited to this, as long as the material with necessary heat dissipation characteristics.For example, it is also possible to make
With aluminium, iron, can also use to they carry out it is compound obtained from material.Alternatively, it is also possible to use copper/invar/copper etc. compound
Material can also use the alloys such as AlSiC, CuMo.
The surface of the material used in these electrode patterns 51,53, parent plate 1 and terminal 7 usually carries out nickel plating, but
It is without being limited thereto, can also carry out it is gold-plated, tin plating, as long as necessary electric current and voltage can be supplied to power semiconductor 4
Construction.In addition, at least part of terminal 7 and electrode pattern 51 is embedded in sealing resin 8, so can also be in order to
The adhesion for improving terminal 7 and electrode pattern 51 and sealing resin 8 is arranged micro- on the surface of terminal 7 and electrode pattern 51
Small bumps.Thereby, it is possible to improve the adhesion of terminal 7 and electrode pattern 51 and sealing resin 8.
Insulating substrate 5 be the insulating layer 52 using the ceramics such as Al2O3, SiO2, AlN, BN, Si3N4 two sides setting copper,
The structure of the electrode pattern 51,53 of aluminium.Insulating substrate 5 needs to have thermal diffusivity and insulating properties, is not limited to above-mentioned material, can also
It is insulating layer 52 having the hardening of resin object of ceramic wafer in the hardening of resin object as made of ceramic powder is made to disperse or embedment
The structure of electrode pattern 51,53 is set.
In addition, about the ceramic powder used in insulating substrate 5 (insulating layer 52), using Al2O3, SiO2, AlN, BN,
Si3N4 etc., but not limited to this, diamond, SiC, B2O3 etc. can also be used.In turn, silicone resin, acrylic acid can also be used
The powder of the resins such as resin.
These powder shapes are more using spherical situation, but not limited to this, can also use fragment shape, granular, flakey,
Agglutination body etc..About the loading of powder, the amount of necessary thermal diffusivity and insulating properties can be obtained in filling.About in insulation base
The resin used in plate 5 (insulating layer 52), usually using epoxy resin, but not limited to this, can also use polyimide resin,
Silicone resin, acrylic resin etc., as long as having both the material of insulating properties and cementability, it will be able to use.
About closing line 6, it is circular wire body to use the section shape with aluminium or gold for material, but not limited to this, example
Such as, it is structure (band) obtained from rectangular copper coin becomes band-like that can also make section shape.As shown in Figure 1, in this reality
Apply in mode 1, using 4 piece-root grafting zygonemas 6, connection power semiconductor 4 each other, power semiconductor 4 and terminal 7, electrode
Pattern 51 and terminal 7, but not limited to this, necessary thickness can be used according to the current density etc. of power semiconductor 4
The closing line 6 of (size), and necessary radical is set.
In addition, the engagement about closing line 6 and joint, can use the molten metal of the sheet metal of copper, tin etc., surpass
Sound wave engagement etc., but as long as being the method/construction that can supply necessary electric current and voltage to power semiconductor 4, does not then have
It is particularly limited to.
It is preferable to use the high resin materials of thermal softening point for housing parts 2, such as have PPS (Poly Phneylene
Sulfide, polyphenylene sulfide) resin, but as long as thermal deformation does not occur in the temperature in use region of semiconductor device 100, and have
There is insulating properties, is not particularly limited.
On the top of housing parts 2, be provided with lid 9, by lid 9, separating semiconductor device 100 it is inside and outside, prevent
Only dust etc. enters the inside of semiconductor device 100.
Pressing plate 10 is set to the lower face side (the opposite surface side with Silica hydrogel 8) of lid 9 to be contacted with sealing resin 8,
It is contacted with the Silica hydrogel 8 of the material as sealing resin.About pressing plate 10 thermoplastic resin can be used as material
Or thermosetting resin etc..For example, by using material same as the component of lid 9, can with semiconductor device 100
In the identical process of making of lid 9, pressing plate 10 and lid 9 are made together.By making together, operation can be simplified.Pressing plate
10 from lid 9 with Silica hydrogel 8 is opposite is protruded towards Silica hydrogel 8.Pressing plate 10 (is drawn with Silica hydrogel 8 always not occurring negative pressure
Stretch stress) mode, contacted with Silica hydrogel 8.Pressing plate 10 becomes the lower surface of pressing plate 10 by highlightedly being configured from lid 9
The state touched with Silica hydrogel 8 with a part for side.Pressing plate 10 touches the hardening thing of the Silica hydrogel 8 as sealing resin
Surface on.
For the purpose of ensuring the insulating properties in 100 inside of semiconductor device, what is surrounded by parent plate 1 and housing parts 2
In region, Silica hydrogel 8 is filled.Silica hydrogel 8 is filled to power semiconductor 4 and closing line 6 and is sealing into Silica hydrogel 8
Highly.
In addition, as sealing resin, using such as silicone resin, as long as however, not limited to this, there is desired elasticity
The resin of modulus and heat resistance, it will be able to use.
Fig. 2 is profile construction schematic diagram when showing the low temperature of the semiconductor device in embodiments of the present invention 1.Fig. 3
It is profile construction schematic diagram when showing the high temperature of the semiconductor device in embodiments of the present invention 1.Fig. 4 is to show the present invention
Embodiment 1 in semiconductor device other low temperature when profile construction schematic diagram.Fig. 2,4 show semiconductor device
Temperature be reduced to room temperature it is below in the case of semiconductor device inside profile construction schematic diagram.
Fig. 3 is the semiconductor dress in the case of showing the temperature rise to the hardening temperature of Silica hydrogel of semiconductor device or more
The profile construction schematic diagram for the inside set.
The hardening temperature of the Silica hydrogel 8 used in the insulated enclosure of semiconductor device 100 is typically 60~150 DEG C.Separately
Outside, the linear expansion coefficient of the Silica hydrogel 8 used in the insulated enclosure of semiconductor device 100 is typically 300~500ppm/K.Separately
On the one hand, the linear expansion coefficient of the other structures component used in semiconductor device 100 is 3~25ppm/K, Silica hydrogel 8
Linear expansion coefficient is~mono- hundred tens times of value bigger by tens than the other structures component used in semiconductor device 100.
Therefore, make the Silica hydrogel 8 being filled into inside shell 2 harden and make sealing process complete after, semiconductor device
When 100 temperature is reduced to room temperature, Silica hydrogel 8 is more substantially heat-shrinked than other structures component.At this point, the surface of Silica hydrogel 8 is high
Spend due to Silica hydrogel 8 thermal contraction and compare harden when low (referring to Fig.1).
In addition, when the temperature of semiconductor device 100 is lower than room temperature, as shown in Fig. 2, the apparent height of Silica hydrogel 8 is into one
Step is lower.In turn, as shown in figure 4, according to set temperature, it is also contemplated that the apparent height of Silica hydrogel 8 becomes and pressing plate 10
The case where position that peripheral portion connects.
On the other hand, when the temperature of semiconductor device 100 is higher than hardening temperature, Silica hydrogel 8 is more than other structures component
It substantially thermally expands, so as shown in figure 3, the position when apparent height of Silica hydrogel 8 is than hardening is high.
Here, the variable quantity of the Silica hydrogel 8 caused by temperature change is set as Δ L, the surface area of Silica hydrogel 8 is set as to S,
When the volume of Silica hydrogel 8 being set as V, the cubical expansivity of Silica hydrogel 8 being set as β, temperature variation is set as to Δ T, Δ L=V
The relationship of × β × Δ T × 1/S is set up.In the amount for giving as security pressing plate 10 from 8 surface of Silica hydrogel than at temperature difference Δ Tmin
When the variation delta Lmin of Silica hydrogel 8 is big, at a temperature of the use environment of semiconductor device 100, pressing plate 10 always touches
The internal stress on 8 surface of Silica hydrogel, the Silica hydrogel 8 of 10 lower part of pressing plate becomes compression stress, and temperature difference Δ Tmin is to incite somebody to action
Be set to the pressing plate 10 of lid 9 from 8 surface of Silica hydrogel to 5 direction of insulating substrate give as security fashionable temperature, with semiconductor device 100
The temperature difference of minimum temperature under temperature in use environment.
Therefore, 8 surface of slave Silica hydrogel of pressing plate 10 enters amount to the signature in 5 direction of insulating substrate and is preferably greater than Δ Lmin.Example
Such as, when the minimum temperature environment using semiconductor device 100 is -40 DEG C, if pressing plate is arranged under room temperature (25 DEG C)
10, then Δ Tmin as 65 DEG C, give as security into amount Δ Lmin by setting.For example, close in the resin that cubical expansivity β is 1300ppm/K
In the case of the semiconductor device for being sealed to height 20mm, become Δ Lmin=1.7mm.By than Δ Lmin larger give as security into,
Even if in low temperature, since pressing plate always pierces in gel, so compression stress can be applied.
In addition, if at -40 DEG C of the minimum temperature using semiconductor device 100 setting (give as security into) pressing plate 10,
Δ Tmin becomes 0, so give as security also becomes 0 into amount Δ Lmin.8 table of Silica hydrogel is arrived that is, only becoming and pressing plate 10 being made to contact (contiguity)
State on face, always to the power semiconductor 4 of 10 lower part of pressing plate under the use environment of semiconductor device 100
With insulating substrate 5 assign compression stress, and can inhibit bubble, stripping development, the stripping quilt of insulating substrate 5 and Silica hydrogel 8
Inhibit, has the effect of inhibiting the insulation degradation of power module.It is high therefore, it is possible to obtain reliability at a temperature of use environment
Semiconductor device.
Even being given as security into amount in addition, Δ Lmin is below, also certainly to from power semiconductor 4 or insulating substrate 5
The inhibition of inhibition, the stripping of the bubble occurred with the interface of Silica hydrogel 8 has effect.
Fig. 5 is the vertical view organigram for showing the semiconductor device in embodiments of the present invention 1.Fig. 6 is to show this
The profile construction schematic diagram of other semiconductor devices in the embodiment 1 of invention.Fig. 7 is to show embodiments of the present invention 1
In other semiconductor devices vertical view organigram.Fig. 5 is the vertical view construction signal for showing the case where pressing plate 10 is 1
Figure.Fig. 6,7 are the profile construction schematic diagram and vertical view organigram for showing the case where pressing plate 10 is 2.
In the semiconductor device 100 for being sealed with Silica hydrogel 8, as the happening part of bubble, closing line 6 can be enumerated and connect
Close position, insulating substrate 5 and grafting material 3 interface, case bonding agent interface etc., it is ensured that power semiconductor 4 and absolutely
Insulating properties in edge substrate 5 is most important, and it is advantageous to pressing plate 10 is arranged in a manner of covering the upper surface of insulating substrate 5.
In vertical view organigram shown in fig. 5, becomes and be configured with the construction of insulating substrate 5 in the lower part of pressing plate 10.
In addition, in fig. 1 it is illustrated that the case where insulating substrate 5 is 1, but can also be applied to carry 2 or more certainly
The semiconductor device of insulating substrate 5, pressing plate 10 are also not necessarily limited to 1, can also be split and configure multiple pressing plate 10
To lid 9.For example, semiconductor device 200 as shown in Figure 6,7, carries out 2 segmentations to pressing plate 10 and configures, can also obtain same
The effect of sample.
In turn, the pressing plate 10 involved by present embodiment has flat shape with the contact site of Silica hydrogel 8, but presses
The shape of pressing plate 10 can also be the shape for having convex towards the direction of insulating substrate 5.Pressing plate 10 is in 8 hardening of Silica hydrogel
It is given as security into 5 direction of insulating substrate from the surface of Silica hydrogel 8, so if the fracture strength of Silica hydrogel 8 is low, will pressed afterwards
When plate 10 is given as security into Silica hydrogel 8, worry cracks inside pressing plate 10 end to Silica hydrogel 8, and it is advantageous in pressing plate
R shapes (being rounded) are formed at the angle of 10 ends.
Next, illustrating the manufacturing method of present embodiment 1.Especially, here, explanation has setting for the lid 9 of pressing plate 10
Set method.
Fig. 8 to Figure 11 is to show that the profile construction of the manufacturing method of the semiconductor device in embodiments of the present invention 1 shows
It is intended to.Figure 12 is the profile construction schematic diagram for showing lid and pressing plate in embodiments of the present invention 1.Figure 13 is to show this hair
The profile construction schematic diagram of other lids and pressing plate in bright embodiment 1.Figure 14 is shown in embodiments of the present invention 1
Other lid and pressing plate profile construction schematic diagram.Fig. 8 be power semiconductor 4 etc. is installed, connected up and is used it is close
It seals resin and completes the section shape schematic diagram after sealing.Fig. 9 is the profile construction schematic diagram that pressing plate 10 is configured to lid 9.Figure 10
It is the profile construction schematic diagram that just housing parts 2 have been installed before lid 9.Figure 11 is the semiconductor device 100 installed after lid 9
Section shape schematic diagram.Figure 12 is the construction that pressing plate 10 is configured to lid 9.Figure 13 is that have bump as pressing plate to lid 9
101 construction.Figure 14 is the construction for having across stick 102 to lid 9 plate 103.
It can be manufactured by the technique shown in Fig. 8 to Figure 11 (via process).Fig. 8 is the semiconductor before additional cap 9
The preparatory process (component arrangement step, resin filling work procedure and hardening of resin process) of device 100.In this process, pass through
Parent plate 1, housing parts 2, insulating substrate 5, power semiconductor 4, closing line 6, Silica hydrogel 8 are suitably configured, is formed attached
Semiconductor device 100 before capping 9.
Specifically, the electrode pattern 51 of the surface side to insulating substrate 5, with the grafting materials such as solder 3, bonding power half
Conductor element 4.In addition, with the grafting materials such as solder 3, the electrode pattern 53 of the back side of insulating substrate 5 is bonded with parent plate 1
(component arrangement step).Form the region that the parent plate 1 becomes bottom plate and surrounded by parent plate 1 and housing parts 2.The region at
For shell.In the shell, until power semiconductor 4 and closing line 6 are sealing into the height in Silica hydrogel 8, silicon is filled
Gel 8 (resin filling work procedure).It is enclosed after Silica hydrogel 8 in shell, semiconductor device 100 itself is placed under decompression, from
And remove in Silica hydrogel 8 in semiconductor device 100 bubble (hardening of resin process).
Next, illustrating the process that pressing plate 10 is arranged to lid 9.Fig. 9 is the figure shown after the setting pressing plate 10 of lid 9.
In addition, Figure 12 to Figure 14 is the profile construction schematic diagram for the shape for showing pressing plate 10.In fig. 12, the shape about pressing plate 10
Shape, to shape object of the lid 9 configured with plate (with reference to Fig. 9).In fig. 13, the direction of oriented insulating substrate 5 is configured to lid 9 to be become
The bump 101 of convex form.In fig. 14, it is being formed with plate 103 from the stick 102 that lid 9 extends.As long as in this way, being capable of conduct
The pressing plate 10 for giving as security the sealing resin (Silica hydrogel 8) into coverage power semiconductor element 4 functions, then the shape of pressing plate 10
It is not particularly limited.
As the process that pressing plate 10 is arranged to lid 9, material same as the component of lid 9 is used by the component of pressing plate 10
Matter can be made by pressing plate 10 be molded together in the making same processes with lid 9.In addition, in the portion of lid 9
In the case of the component difference of part and pressing plate 10, the bump of convex form can be adhered to lid 9 by using bonding material etc.
The face opposite with insulating substrate 5 make.It in turn, can be by right when needing arbitrarily to adjust the height of pressing plate 10
Lid 9 and pressing plate 10 implement hole processing to adjust respectively.In this case, first, laterally disposed in 9 side of lid from lid 9
Threaded hole is inserted into screw externally to inside, later, the threaded hole of pressing plate 10 is screwed in the threaded male portion for being set to lid 9, from
And it can be adjusted in a manner of so that pressing plate 10 is become scheduled height.
Next, illustrating the lid 9 by being formed with pressing plate 10, the process (contiguity of (contiguity) is compressed to Silica hydrogel 8
Process).As shown in Figure 10, Silica hydrogel 8 is filled in shell, after hardening Silica hydrogel 8 under scheduled hardening temperature, is made hard
The temperature of the Silica hydrogel 8 of change is reduced to room temperature or its temperature below.Later, so that pressing plate 10 touches 8 table of Silica hydrogel
The mode in face is provided with the lid 9 of pressing plate 10, the direction in 5 direction of insulating substrate is compressed to Silica hydrogel 8, by swaging
At the lid 9 for having pressing plate 10, fixed cover 9 at a predetermined height.
Enter amount about the signature on 8 surface of slave Silica hydrogel of pressing plate 10, preferably in the temperature in use area of semiconductor device 100
In domain, always it is directed to insulating substrate 5 and applies compression stress, it is advantageous to for to the semiconductor in the state for not applying stress
Device 100 be arranged pressing plate 10 when temperature to use semiconductor device 100 minimum temperature region Δ Lmin or more
It gives as security into amount.
For example, when the minimum temperature environment using semiconductor device 100 is -40 DEG C, it is arranged under room temperature (25 DEG C)
In the case of pressing plate 10, Δ Tmin becomes 65 DEG C, and setting is given as security into amount Δ Lmin.For example, being 1300ppm/ in cubical expansivity β
In the case that the resin of K is sealed to the semiconductor device of height 20mm, become Δ Lmin=1.7mm.By than Δ Lmin
Larger give as security into, even if in low temperature, also due to pressing plate always pierces in gel, so can apply compression stress.
In addition, in the case that pressing plate 10 are set at -40 DEG C of the minimum temperature using semiconductor device 100, Δ
Tmin becomes 0 DEG C, so give as security also becomes 0mm into amount Δ Lmin.That is, only becoming makes pressing plate 10 be fitted on 8 surface of Silica hydrogel
State, by a temperature of the use environment of semiconductor device 100, always partly being led to the power of the lower part of pressing plate 10
Volume elements part 4 and insulating substrate 5 assign compression stress, can manufacture the high semiconductor device of reliability.Therefore, it is possible in semiconductor
At a temperature of the use environment of device 100, inhibit bubble, stripping development, the stripping of insulating substrate 5 and Silica hydrogel 8 is suppressed, tool
There is the effect for the insulation degradation for inhibiting power module.
Even being given as security into amount in addition, Δ Lmin is below, also certainly to from power semiconductor 4, insulating substrate 5 and silicon
The inhibition of inhibition, the stripping of the bubble that the interface of gel 8 occurs has effect.
Next, illustrating the fixed step of lid 9 and housing parts 2.Figure 11 is shown after lid 9 is fixed to shell.As setting
It is equipped with the fixing means of the lid 9 of pressing plate 10, as long as fixing pressing plate 10 at a predetermined height, is not particularly limited, energy
It is enough to be made by using the fixed method of bonding agent, the method linked by screw-driving.
Using bonding agent fixed cover 9 and housing parts 2, unhardened bonding agent is injected to syringe, is made
With equipment such as distributors, bonding agent is applied to the necessary place of lid 9 and housing parts 2.Later, in adhesive cover 9 and shell
After component 2, given as security using fixture into being fixed in a manner of so that lid 9 and pressing plate 10 is become scheduled height.Then, make to glue
Connect after agent hardens under scheduled curing condition, removal give as security into fixture.For example, as bonding agent used as silicone tree
In the case of chemical industrial company of the SHIN-ETSU HANTOTAI KE-1833 of fat, 1 hour cure process is carried out at 120 DEG C.It is hard in bonding agent
After change, after so that fixture is cooled to room temperature, removal give as security into fixture, then can make using pressing plate 10 make Silica hydrogel 8 compress
Semiconductor device 100.
About the bonding agent of lid 9 and housing parts 2, as long as in the high temperature action of semiconductor device 100, fixed lid 9
It will not be fallen off, be not particularly limited, but and housing section from housing parts 2 due to the power associated with the thermal expansion of Silica hydrogel 8
The bonding force of part is preferably 1.5MPa or more.
By screw-driving come fixed cover 9 and housing parts 2, hole is threaded in housing parts 2 simultaneously
Screw is equably tightened to the threaded hole of setting, so that fashionable being given as security using pressing plate 10, Silica hydrogel 8 becomes scheduled height
Degree, is thus made.The radical of the screw of connection is not particularly limited, but in order to make the compression Silica hydrogel 8 of pressing plate 10
Power becomes impartial, is preferably provided with even number root.
Manufacturing method in this way can manufacture semiconductor device 100.
Illustrate the feature for the semiconductor device 100 that manufacturing method in this way is produced.Before filling Silica hydrogel
The scheduled position of semiconductor device is arranged previous pressing plate and so that Silica hydrogel is hardened at a predetermined temperature to manufacture
In semiconductor device, under high temperature environment, Silica hydrogel thermally expands, so the Silica hydrogel in the lower expansion of pressing plate passes through pressing
Its expansion of plate is pressed, and applies compression stress for the lower part of pressing plate, so can inhibit that gas occurs in the lower part of pressing plate
Bubble, stripping.
But under the hardening temperature of Silica hydrogel low temperature environment below, Silica hydrogel is heat-shrinked, so under pressing plate
To whole directions of the contiguity including pressing plate tensile stress occurs for the Silica hydrogel that portion is shunk, so depositing in the lower part of pressing plate
In the bottom surface sections of power semiconductor and the semiconductor device of insulating substrate, the stretching in the lid direction for top is also generated
Stress, worry promote gassing and stripping.
However, in the semiconductor device 100 manufactured by the manufacturing method of present embodiment, after the hardening of Silica hydrogel 8
It is given as security from 8 surface of Silica hydrogel into pressing plate 10, compression stress is applied to power semiconductor 4 and insulating substrate 5, by applying Δ
The signature of Lmin or more enters amount, even if Silica hydrogel 8 is shunk in the minimum temperature region under the use environment of semiconductor device 100
In the case of, still apply compression stress.Therefore, when being not only the expansion of the Silica hydrogel 8 under hot environment, and in low temperature environment
Under contraction when, also can in the lower part of pressing plate 10, inhibit the bubble generated from power semiconductor 4 and insulating substrate 5,
The development of stripping can improve the insulating reliability of semiconductor device 100.
In the semiconductor device 100 constituted as previously discussed, it is not only with the applied at elevated temperature in semiconductor device 100
Silica hydrogel 8 expands and can be directed to power semiconductor 4 and the imparting compression of insulating substrate 5 of 10 lower part of pressing plate under environment
Stress, and under low temperature use environment Silica hydrogel 8 shrink when, also for 10 lower part of pressing plate power semiconductor 4 with
And insulating substrate 5 assigns compression stress, so the insulating reliability of semiconductor device improves.
In addition, at high temperature, Silica hydrogel 8 is expanded due to thermal expansion, the Silica hydrogel 8 of expansion is pressed the pressing of plate 10, from
And in 10 lower part of pressing plate, internal stress pair and the opposite direction of insulating substrate 5 of Silica hydrogel 8 become compression stress, can press down
Bubble processed, stripping development, have the effect of inhibiting the insulation degradation of semiconductor device.
In turn, in low temperature, Silica hydrogel 8 is shunk due to thermal contraction, so while pair direction opposite with insulating substrate 5
Compression stress than being reduced when high temperature, but due to being endowed compression stress, so the hair of the growth of bubble, stripping can be inhibited
Exhibition, can obtain the high semiconductor device of reliability.
The above embodiment is to illustrate and be not interpreted as restrictive in all respects.The scope of the present invention is not
Shown, but be shown in the claims by the range of the above embodiment, include with the meaning of claims equalization and
Being had altered in range.
Alternatively, it is also possible to form invention by appropriately combined multiple inscapes disclosed in the above-described embodiment.
Embodiment of disclosure is to illustrate, and be not considered as restrictive in all respects.The model of the present invention
Enclose and not shown by above description, but be shown in the claims, it is intended that include with the meaning of claims equalization and
Being had altered in range.
[embodiment]
In the present embodiment, it shows to carry pressing plate 10 to the semiconductor device 100 of experiment, the signature of pressing plate 10 is made to enter
Amount, dimension modifying carry out result obtained from thermal cycling test.Whole be put into of semiconductor device 100 can be controlled into temperature
Thermostat, so that the temperature of thermostat is changed repeatedly between -40 DEG C~150 DEG C, to implement thermal cycling test.
About the semiconductor device 100 of evaluation, the size of parent plate 1 is 90 × 140mm, insulating substrate 5 using 50 ×
1 substrate using Si3N4 of 60mm sizes.Power semiconductor 4 uses the IGBT of 4 11 × 12mm.Closing line 6 uses
Conducting wire diameter is the aluminium of 0.4mm.In addition, Silica hydrogel 8 utilizes Asahi Chemical Industry Wacker Silicone corporation WACKER SilGel612
Sealing.Housing parts 2, lid 9 and pressing plate 10 are made using the PPS resin Z240 of DIC corporations.
In order to promote gassing and stripping in Silica hydrogel 8, do not implement reduced pressure treatment, under atmospheric pressure by Silica hydrogel
8 injection 160g are hardened after placing 30min under atmospheric pressure at 70 DEG C/1hr, are made of above-mentioned component to produce
Semiconductor device 100.The PPS of the thickness of 20mm is cut into scheduled size, the back of the body of lid 9 is adhered to using silicone bonding agent
Face, to produce pressing plate 10.
About thermal cycling test as a result, judge the generation of the bubble in Silica hydrogel, Silica hydrogel and various parts whether there is or not
Stripping.The visually quantity of observation gassing, is then judged as zero if it is 0, is then judged as △ if it is 1~4, if it is
5 or more be then judged as ×.In addition, about stripping, the feelings without stripping and crackle in the interface of various parts and Silica hydrogel 8
Under condition, it is set as zero, in the case where there is stripping and crackle, be set as ×.
Figure 15 is the profile construction schematic diagram of previous semiconductor device.In fig.15, previous as comparative example 1
In semiconductor device 300, the pressing plate 10 such as present embodiment 1 is not arranged to lid 9.
Table 1 shows the relationship of the pressing plate for studying/evaluating given as security into amount and thermal cycling test.The sample studied be by 50 ×
Various give as security is set to carry out various changes into amount right over the setting to insulating substrate 5 of pressing plate 10 of 60mm and under 25 DEG C of temperature environment
Change and studies.Signature about pressing plate 10 enters amount, in 0mm (comparative example 1), 1mm (embodiment 2), 3mm (embodiment 1) this 3
Under the conditions of implement.
[table 1]
According to table 1 it is found that in the sample without pressing plate 10 of comparative example 1, in thermal cycling test 250cyc, from insulation
The bubble of a part occurs for 3 lower part of grafting material of substrate 5.In contrast, in the sample for having pressing plate 10 of embodiment 1,2
In, inhibit the generation and stripping of bubble.In addition, giving as security for pressing plate 10 is set as into amount the sample of 1mm about embodiment 2
Product confirm the bubble of a part.But, it is known that make the amount of signature of pressing plate 10 as in the sample of 3mm in embodiment 1,
The generation of bubble and stripping is not observed after thermal cycling test 1000cyc yet.
According to the above results it is found that by the way that pressing plate is arranged on power semiconductor 4 and insulating substrate 5
10, and it is always to confer to compression stress to Silica hydrogel 8, inhibit the generation of bubble and stripping.In addition, understanding that the signature of pressing plate 10 enters
Amount is bigger, and the inhibition of generation and the stripping of bubble is higher.
Table 2 shows the relationship of size (size) and thermal cycling test for the pressing plate for studying/evaluating.The sample studied is pair
The size of pressing plate 10 makes various changes and is arranged to right over insulating substrate 5, will be given as security into amount under 25 DEG C of temperature environment
It is set as 3mm and gives as security into and study.Pressing plate is dimensioned to 10 × 15mm (embodiment 2), 25 × 30mm (embodiments
3), this 4 conditions of 30 × 50mm (embodiment 4), 50 × 60mm (embodiment 1), 84 × 120mm (embodiment 5), are set to insulation
The center of substrate 5.
[table 2]
According to table 2, in the pressing board size of embodiment 2 is the sample of 10 × 15mm, generation, stripping about bubble,
As result same as the sample without pressing plate 10 shown in table 1.It is as a result, insulating substrate 5 in the size of pressing plate 10
When 5% area, the bubble and stripping that the compression to power semiconductor 4 and insulating substrate 5 is played less are seen
From inhibition.
It understands in the pressing board size of embodiment 3 is the sample of 25 × 30mm, generation, stripping about bubble are compared
Sample without pressing plate 10 shown in table 1, can inhibit the generation of bubble and stripping.But it is although unconfirmed from setting
There is the position gassing of pressing plate 10, but when the size of pressing plate 10 is 25% area of insulating substrate 5, in insulation base
Pressing plate 10 is not present in the top of 5 periphery of plate, and bubble is confirmed from the grafting material 3 of 5 lower part of insulating substrate.
It understands in the pressing board size of embodiment 4 is the sample of 30 × 50mm, generation, stripping about bubble are compared
Sample without pressing plate 10 shown in table 1, can inhibit the generation of bubble and stripping.Understanding the size in pressing plate 10 is
When 50% area of insulating substrate 5, the generation of bubble and stripping is not observed after thermal cycling test 1000cyc yet.
It understands in 10 size of pressing plate of embodiment 1 is the sample of 50 × 60mm, generation, stripping about bubble, phase
Than the sample without pressing plate 10 shown in table 1, the generation of bubble and stripping can be inhibited.Known to pressing plate 10 size with
When 5 identical area of insulating substrate, the generation of bubble and stripping is not observed after thermal cycling test 1000cyc yet.
It understands in 10 size of pressing plate of embodiment 5 is the sample of 84 × 120mm, generation, stripping about bubble, phase
Than the sample without pressing plate 10 shown in table 1, the generation of bubble and stripping can be inhibited.But it is although unconfirmed from setting
It is equipped with the position gassing of pressing plate 10, but is the most surface of the Silica hydrogel 8 of semiconductor device 100 in the size of pressing plate
When 80% or more (contact area is 80% or more) of area, in thermal cycling test 250cyc, confirm and 2 side of housing parts
The crackle of the stripping in face and the Silica hydrogel from 10 side of pressing plate.Think that the size in pressing plate 10 is semiconductor device
100 1 size of parent plate 80% or more when, expand at high temperature Silica hydrogel 8 concentration be pooled to unused pressing plate 10 covering
20% position below, so the addendum modification of Silica hydrogel 8 is big, so generating stripping and the silicon of Silica hydrogel 8 and housing parts 2
The crackle of gel 8.Therefore, it is known that in order to inhibit stripping, crackle, pressing plate 10 to be more preferably less than with the contact area of Silica hydrogel 8
80%.
According to the above results, it is pressed plate 10 by insulating substrate 5 to cover, gassing and stripping can be inhibited.
In addition, the area for passing through pressing plate be 50% or more of the area of insulating substrate 5 and with the contact surface on the surface of Silica hydrogel 8
Product is less than 80%, can inhibit stripping, crackle.
Claims (10)
1. a kind of semiconductor device, which is characterized in that have：
Insulating substrate, in upper surface equipped with semiconductor element；
Parent plate is joined to the exhausted lower surface for obtaining substrate；
Housing parts surround the insulating substrate, connect with the face for being bonded to the insulating substrate of described matrix plate；
Sealing resin is filled by the region of described matrix plate and housing parts encirclement, is carried out to the insulating substrate close
Envelope；
Cover, it is opposite with the surface of the sealing resin, it is bonded with the housing parts；And
Pressing plate, the lower surface of the pressing plate and a part for side and the surface of the sealing resin are touched, upper surface
It is highlightedly bonded from the face opposite with the surface of the sealing resin of the cover.
2. semiconductor device according to claim 1, which is characterized in that
The pressing plate touches on the surface of the hardening thing of the sealing resin.
3. semiconductor device according to claim 1 or 2, which is characterized in that
The pressing plate is configured at the top of the insulating substrate.
4. according to the semiconductor device described in any one in claims 1 to 3, which is characterized in that
The pressing plate have the insulating substrate area 50% or more size, and with the contact area on the surface
Less than 80%.
5. according to the semiconductor device described in any one in Claims 1-4, which is characterized in that
The pressing plate is always touched with the sealing resin within the temperature range of allowing use.
6. according to the semiconductor device described in any one in claim 1 to 5, which is characterized in that
The pressing plate is divided into multiple and configures.
7. according to the semiconductor device described in any one in claim 1 to 6, which is characterized in that
The pressing plate is the material different from the cover.
8. a kind of manufacturing method of semiconductor device, which is characterized in that have：
Filling work procedure, to the area filling sealing resin surrounded by parent plate and housing parts；
Hardening process makes the sealing resin of filling harden；
Touch process, pressing plate is made to be fitted into the sealing resin of hardening；And
Fixed step fixes the pressing plate at a predetermined height.
9. the manufacturing method of semiconductor device according to claim 8, which is characterized in that
In the contiguity process, the sealing resin is pressed to described matrix plate side direction with the pressing plate.
10. the manufacturing method of semiconductor device according to claim 9, which is characterized in that
At minimum temperature within the temperature range of allowing use, implement the contiguity process.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016027058 | 2016-02-16 | ||
| JP2016-027058 | 2016-02-16 | ||
| PCT/JP2016/087228 WO2017141532A1 (en) | 2016-02-16 | 2016-12-14 | Semiconductor device and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108604589A true CN108604589A (en) | 2018-09-28 |
| CN108604589B CN108604589B (en) | 2022-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680081182.7A Active CN108604589B (en) | 2016-02-16 | 2016-12-14 | Semiconductor device and method for manufacturing the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10720368B2 (en) |
| JP (1) | JP6676079B2 (en) |
| CN (1) | CN108604589B (en) |
| DE (1) | DE112016006433T5 (en) |
| WO (1) | WO2017141532A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782504A (en) * | 2021-09-08 | 2021-12-10 | 中国矿业大学 | Simplified packaging structure of power module of integrated radiator and manufacturing method |
| WO2023098184A1 (en) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | Package for insulated gate bipolar transistor (igbt) electrical unit |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6848802B2 (en) | 2017-10-11 | 2021-03-24 | 三菱電機株式会社 | Semiconductor device |
| EP3799546A1 (en) * | 2019-09-25 | 2021-03-31 | Siemens Aktiengesellschaft | Support for electrical components |
| JP7384146B2 (en) * | 2020-11-26 | 2023-11-21 | 三菱電機株式会社 | Semiconductor equipment and power conversion equipment |
| EP4273918A1 (en) * | 2022-05-05 | 2023-11-08 | Infineon Technologies AG | A semiconductor package comprising structures configured to withstand a change of the volume of an potting compound |
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| JP3788760B2 (en) * | 2001-11-09 | 2006-06-21 | 三菱電機株式会社 | Semiconductor device |
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| JP2014175454A (en) * | 2013-03-08 | 2014-09-22 | Mitsubishi Electric Corp | Power semiconductor device and method of manufacturing power semiconductor device |
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- 2016-12-14 WO PCT/JP2016/087228 patent/WO2017141532A1/en active Application Filing
- 2016-12-14 CN CN201680081182.7A patent/CN108604589B/en active Active
- 2016-12-14 JP JP2017567964A patent/JP6676079B2/en active Active
- 2016-12-14 DE DE112016006433.0T patent/DE112016006433T5/en active Pending
- 2016-12-14 US US16/073,448 patent/US10720368B2/en active Active
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| JPH04113656A (en) * | 1990-09-03 | 1992-04-15 | Mitsubishi Materials Corp | High strength heat radiation structural member for package type semiconductor device |
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| WO2023098184A1 (en) * | 2021-11-30 | 2023-06-08 | 北京卫星制造厂有限公司 | Package for insulated gate bipolar transistor (igbt) electrical unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2017141532A1 (en) | 2018-10-25 |
| CN108604589B (en) | 2022-03-15 |
| WO2017141532A1 (en) | 2017-08-24 |
| US10720368B2 (en) | 2020-07-21 |
| DE112016006433T5 (en) | 2018-11-15 |
| JP6676079B2 (en) | 2020-04-08 |
| US20190371686A1 (en) | 2019-12-05 |
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