CN108594594B - 显示装置制造用光掩模、以及显示装置的制造方法 - Google Patents

显示装置制造用光掩模、以及显示装置的制造方法 Download PDF

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Publication number: CN108594594B
Authority: CN; China
Prior art keywords: pattern; photomask; main; display device; manufacturing
Prior art date: 2017-03-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201810185361.6A

Other languages

English (en)

Chinese (zh)

Other versions

CN108594594A (zh

Inventor

今敷修久

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hoya Corp

Original Assignee

Hoya Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2017-03-10

Filing date

2018-03-07

Publication date

2023-05-02

2018-03-07 Application filed by Hoya Corp filed Critical Hoya Corp

2018-03-07 Priority to CN202310372114.8A priority Critical patent/CN116500854A/zh

2018-09-28 Publication of CN108594594A publication Critical patent/CN108594594A/zh

2023-05-02 Application granted granted Critical

2023-05-02 Publication of CN108594594B publication Critical patent/CN108594594B/zh

Status Active legal-status Critical Current

2038-03-07 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims abstract description 96
238000012546 transfer Methods 0.000 claims abstract description 98
230000010363 phase shift Effects 0.000 claims abstract description 88
230000005540 biological transmission Effects 0.000 claims abstract description 46
239000000758 substrate Substances 0.000 claims abstract description 32
239000010408 film Substances 0.000 claims description 142
238000002834 transmittance Methods 0.000 claims description 43
230000003287 optical effect Effects 0.000 claims description 15
239000012788 optical film Substances 0.000 claims description 2
238000000059 patterning Methods 0.000 claims description 2
238000010023 transfer printing Methods 0.000 claims 1
238000000034 method Methods 0.000 description 17
229920002120 photoresistant polymer Polymers 0.000 description 15
238000005530 etching Methods 0.000 description 13
239000000463 material Substances 0.000 description 12
230000000694 effects Effects 0.000 description 9
230000005484 gravity Effects 0.000 description 8
238000004088 simulation Methods 0.000 description 8
238000001039 wet etching Methods 0.000 description 7
239000004065 semiconductor Substances 0.000 description 6
238000005286 illumination Methods 0.000 description 5
238000013041 optical simulation Methods 0.000 description 5
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238000011161 development Methods 0.000 description 3
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238000010586 diagram Methods 0.000 description 3
238000001312 dry etching Methods 0.000 description 3
238000011156 evaluation Methods 0.000 description 3
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230000007261 regionalization Effects 0.000 description 2
230000035945 sensitivity Effects 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
239000002356 single layer Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
229910002651 NO3 Inorganic materials 0.000 description 1
NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
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CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
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239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
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239000011521 glass Substances 0.000 description 1
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Images

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
General Physics & Mathematics (AREA)
Inorganic Chemistry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Chemical & Material Sciences (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

CN201810185361.6A 2017-03-10 2018-03-07 显示装置制造用光掩模、以及显示装置的制造方法 Active CN108594594B (zh)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CN202310372114.8A CN116500854A (zh)	2017-03-10	2018-03-07	显示装置制造用光掩模、以及显示装置的制造方法

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2017-046175		2017-03-10
JP2017046175		2017-03-10

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
CN202310372114.8A Division CN116500854A (zh)	2017-03-10	2018-03-07	显示装置制造用光掩模、以及显示装置的制造方法

Publications (2)

Publication Number	Publication Date
CN108594594A CN108594594A (zh)	2018-09-28
CN108594594B true CN108594594B (zh)	2023-05-02

Family

ID=63625803

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CN201810185361.6A Active CN108594594B (zh)	2017-03-10	2018-03-07	显示装置制造用光掩模、以及显示装置的制造方法
CN202310372114.8A Pending CN116500854A (zh)	2017-03-10	2018-03-07	显示装置制造用光掩模、以及显示装置的制造方法

Family Applications After (1)

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CN202310372114.8A Pending CN116500854A (zh)	2017-03-10	2018-03-07	显示装置制造用光掩模、以及显示装置的制造方法

Country Status (4)

Country	Link
JP (2)	JP6808665B2 (ko)
KR (2)	KR102209088B1 (ko)
CN (2)	CN108594594B (ko)
TW (2)	TWI777402B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7383490B2 (ja) *	2020-01-07	2023-11-20	株式会社エスケーエレクトロニクス	フォトマスク
CN113260178B (zh) *	2021-06-16	2021-09-28	广东科翔电子科技股份有限公司	一种刚挠结合板高精密线路的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07230160A (ja) *	1994-02-16	1995-08-29	Sony Corp	位相シフトマスク
CN1574223A (zh) *	2003-06-24	2005-02-02	松下电器产业株式会社	光掩模、使用该光掩模的图案形成方法及该光掩模的掩模数据编制方法
CN105319831A (zh) *	2014-07-17	2016-02-10	Hoya株式会社	光掩模、光掩模的制造方法、光掩模坯料以及显示装置的制造方法
CN105467745A (zh) *	2014-09-29	2016-04-06	Hoya株式会社	光掩模和显示装置的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3577363B2 (ja) *	1994-06-29	2004-10-13	株式会社ルネサステクノロジ	半導体装置の製造方法
US6022644A (en) *	1998-03-18	2000-02-08	Taiwan Semiconductor Manufacturing Co., Ltd.	Mask containing subresolution line to minimize proximity effect of contact hole
US20020172796A1 (en) *	2001-05-18	2002-11-21	Ronnie Magee	Multi-patterned floor covering sample element
WO2004012260A1 (ja) *	2002-07-30	2004-02-05	Tamura Corporation	精密加工用ステージ装置
JP2006338057A (ja) *	2006-09-25	2006-12-14	Matsushita Electric Ind Co Ltd	フォトマスク
KR20090045493A (ko) *	2007-11-02	2009-05-08	주식회사 동부하이텍	반도체 소자 제조용 마스크 및 이를 이용한 반도체 소자의제조 방법과, 상기 마스크 및 제조 방법에 의해 제조되는반도체 소자
JP6022644B2 (ja) *	2015-07-14	2016-11-09	株式会社タイトー	ゲーム機

2018
- 2018-01-29 JP JP2018012734A patent/JP6808665B2/ja active Active
- 2018-02-12 TW TW110104097A patent/TWI777402B/zh active
- 2018-02-12 TW TW107104933A patent/TWI721247B/zh active
- 2018-03-07 CN CN201810185361.6A patent/CN108594594B/zh active Active
- 2018-03-07 CN CN202310372114.8A patent/CN116500854A/zh active Pending
- 2018-03-08 KR KR1020180027587A patent/KR102209088B1/ko active IP Right Grant
2020
- 2020-12-09 JP JP2020203848A patent/JP2021047449A/ja active Pending
2021
- 2021-01-22 KR KR1020210009641A patent/KR102245531B1/ko active IP Right Grant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07230160A (ja) *	1994-02-16	1995-08-29	Sony Corp	位相シフトマスク
CN1574223A (zh) *	2003-06-24	2005-02-02	松下电器产业株式会社	光掩模、使用该光掩模的图案形成方法及该光掩模的掩模数据编制方法
CN105319831A (zh) *	2014-07-17	2016-02-10	Hoya株式会社	光掩模、光掩模的制造方法、光掩模坯料以及显示装置的制造方法
CN105467745A (zh) *	2014-09-29	2016-04-06	Hoya株式会社	光掩模和显示装置的制造方法

Also Published As

Publication number	Publication date
KR20180103743A (ko)	2018-09-19
TWI721247B (zh)	2021-03-11
TW202129402A (zh)	2021-08-01
CN116500854A (zh)	2023-07-28
TWI777402B (zh)	2022-09-11
TW201843523A (zh)	2018-12-16
KR102209088B1 (ko)	2021-01-28
KR102245531B1 (ko)	2021-04-29
JP2018151618A (ja)	2018-09-27
JP6808665B2 (ja)	2021-01-06
JP2021047449A (ja)	2021-03-25
KR20210011481A (ko)	2021-02-01
CN108594594A (zh)	2018-09-28

Legal Events

Date	Code	Title
2018-09-28	PB01	Publication
2018-09-28	PB01	Publication
2019-11-26	SE01	Entry into force of request for substantive examination
2019-11-26	SE01	Entry into force of request for substantive examination
2023-05-02	GR01	Patent grant
2023-05-02	GR01	Patent grant

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KR101895122B1 (ko)	2018-09-04	포토마스크의 제조 방법, 포토마스크 및 표시 장치의 제조 방법
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