CN108573735A - A kind of the block restorative procedure and device of NAND-FLASH - Google Patents
A kind of the block restorative procedure and device of NAND-FLASH Download PDFInfo
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- CN108573735A CN108573735A CN201710136116.1A CN201710136116A CN108573735A CN 108573735 A CN108573735 A CN 108573735A CN 201710136116 A CN201710136116 A CN 201710136116A CN 108573735 A CN108573735 A CN 108573735A
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- block
- error
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- error block
- spare block
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
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- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
The present invention provides the block restorative procedure of NAND FLASH a kind of and devices, are related to data storage technical field.The block restorative procedure and device of a kind of NAND FLASH provided by the invention,After detecting error block,Corresponding reparation operation can be carried out according to the type of error block,When the error block is the first spare block,First by first spare block labeled as bad,The second spare block is recycled to repair first spare block,So,Due to first spare block can be marked as it is bad,Therefore,Even if having had been written into the address for being repaired block before in the first spare block,Also it can be excluded access due to its bad flag bit when accessing first spare block,Not only avoid the ineffective access to first spare block,Improve access efficiency,And,Access conflict caused by being accessed while avoiding to identical the first spare block and the second spare block for repairing address,Ensure that can reach effect using the second spare block to the reparation operation that first spare block carries out,So that repairing resource will not be wasted.
Description
Technical field
The present invention relates to data storage technical fields, more particularly to the block restorative procedure and dress of a kind of NAND-FLASH
It sets.
Background technology
NAND-FLASH memories use non-linear macroelement pattern because it is internal, are the realization of solid-state large-capacity memory
Cheap effective solution scheme is provided, therefore, NAND-FLASH memories are widely adopted in PC and electronic equipment
Etc..In the actual production process, due to the defect of manufacturing process, often occur error block in NAND-FLASH memories,
Therefore, in the fabrication process, certain spare block can be pre-set in NAND-FLASH as reparation resource.
In the prior art when carrying out error block and repairing, typically, after detecting error block, using reserved
Spare block repairs error block, exemplary, in the test phase of NAND-FLASH, detects error block .A, using reserved
Spare block .B when repaired to error block .A, typically, the address 01 for the block .A that malfunctions is written spare block .B's
In address mark position, in this way by address 01 access error block .A, when operation, due to error block .A address 01
Through being written in spare block .B, it is directed to the access of error block .A in this way, can be carried out on spare block .B, and then reached and repaiied
Multiple effect.
Inventor in the implementation of the present invention, it is found that at least there are the following problems for the prior art：
If mistake occurs in used spare block, i.e. there is mistake in the first spare block, in the prior art, can utilize
Original spare block, that is, the second spare block directly repairs first spare block, will appear reparation operation nothing in this way
The problem of effect, repaiies the spare block .B of the error using spare block .C for example, when mistake occurs in spare block .B
It is multiple, specifically, by the write-in spare block .C of the address 01 preserved in the spare block .B of error, complete to repair operation.But in this way
After reparation, since the address preserved in the spare block .B and spare block .C of error is all 01, carried out for address 01
Access can be carried out at the same time on the spare block .B and spare block .C of error, and then generate conflict, cause the access can not be just
It often carries out so that effect cannot be reached by repairing operation, and reparation resource is caused to be wasted.
Invention content
In view of the above problems, it is proposed that the present invention overcoming the above problem in order to provide one kind or solves at least partly
State the block restorative procedure and device of a kind of NAND-FLASH of problem.
According to the present invention in a first aspect, provide a kind of block restorative procedure of NAND-FLASH, including：
NAND-FLASH is detected into row block, determines the error block in the NAND-FLASH；
When the error block is the first spare block, by the error block labeled as bad, and the second spare block of utilization is to institute
Error block is stated to be repaired；
When the error block is calibrated bolck, the error block is repaired with second spare block.
Optionally, NAND-FLASH is being detected into row block, the step of determining the error block in the NAND-FLASH it
Afterwards, the method further includes：
Determine that the type of the error block, the type of the error block include：Calibrated bolck and the first spare block.
Optionally, the step of type of the determination error block, including：
The flag bit of the address of the error block and all spare blocks is compared one by one；
If compared successfully, flag bit detection is carried out to comparing successful spare block, determines the type of the error block；
If comparing failure, it is determined that the type of the error block is calibrated bolck.
Optionally, it compares successful spare block progress flag bit detection for described pair, determines the step of the type of the error block
Suddenly, including：
If the flag bit that used for comparing successful spare block is active states, it is determined that the class of the error block
Type is the first spare block；
If the flag bit that used for comparing successful spare block is Pending The Entry Into Force state, it is determined that the error block
Type is calibrated bolck.
Optionally, described that the error block is labeled as bad step, including：
It is arranged in the error block mark position and indicates that error block is that bad flag bit comes into force.
Second aspect according to the present invention provides a kind of block repair apparatus of NAND-FLASH, including：
First determining module determines the error block in the NAND-FLASH for being detected into row block to NAND-FLASH；
First repair module, it is bad for when the error block is the first spare block, the error block to be labeled as, and profit
The error block is repaired with the second spare block；
Second repair module is used for when the error block is calibrated bolck, with second spare block to the error block
It is repaired.
Optionally, described device further includes：
Second determining module, the type for judging the error block, the type for malfunctioning block include：Calibrated bolck and
One spare block.
Optionally, first determining module, including：
Submodule is compared, for being compared the flag bit of the address of the error block and all spare blocks one by one；
If first determination sub-module carries out flag bit detection, really for comparing successfully to comparing successful spare block
The type of the fixed error block；
Second determination sub-module, if for comparing failure, it is determined that the type of the error block is calibrated bolck.
Optionally, first determination sub-module, is used for：
If the flag bit that used for comparing successful spare block is active states, it is determined that the class of the error block
Type is the first spare block；
If the flag bit that used for comparing successful spare block is Pending The Entry Into Force state, it is determined that the error block
Type is calibrated bolck.
Optionally, first repair module, is used for：
It is arranged in the error block mark position and indicates that error block is that bad flag bit comes into force.
For first technology, the present invention has following advantage：
The block restorative procedure and device of a kind of NAND-FLASH provided in an embodiment of the present invention, detect error block it
Afterwards, can be carried out according to the type of error block it is corresponding repair operation, it is first that this is first standby when the error block is the first spare block
With block labeled as bad, the second spare block is recycled to repair first spare block, so, due to first spare block
It can be marked as bad, therefore, even if having had been written into the address for being repaired block before in the first spare block, accessing, this is first spare
Also it can be excluded access due to its bad flag bit when block, not only avoid the ineffective access to first spare block, improve
Access efficiency is accessed while moreover, avoiding to identical the first spare block and the second spare block for repairing address and is made
At access conflict, ensure that the reparation carried out to first spare block using the second spare block operation can reach effect, into
And so that repairing resource will not be wasted.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, and in order to allow above and other objects of the present invention, feature and advantage can
It is clearer and more comprehensible, below the special specific implementation mode for lifting the present invention.
Description of the drawings
By reading the detailed description of hereafter preferred embodiment, various other advantages and benefit are common for this field
Technical staff will become clear.Attached drawing only for the purpose of illustrating preferred embodiments, and is not considered as to the present invention
Limitation.And throughout the drawings, the same reference numbers will be used to refer to the same parts.In the accompanying drawings：
Fig. 1 is the block restorative procedure flow chart of steps of NAND-FLASH provided in an embodiment of the present invention a kind of；
Fig. 2-1 is the block restorative procedure flow chart of steps of another kind NAND-FLASH provided in an embodiment of the present invention；
Fig. 2-2 is a kind of method and step flow chart of determining error block provided in an embodiment of the present invention；
Fig. 2-3 is a kind of method and step flow chart of determining error block type provided in an embodiment of the present invention；
Fig. 3 is the block repair apparatus block diagram of NAND-FLASH provided in an embodiment of the present invention a kind of；
Fig. 4-1 is the block repair apparatus block diagram of another kind NAND-FLASH provided in an embodiment of the present invention；
Fig. 4-2 is the block repair apparatus block diagram of another NAND-FLASH provided in an embodiment of the present invention；
Fig. 4-3 is a kind of block diagram of second determining module provided in an embodiment of the present invention.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Embodiment one
Referring to Fig.1, it illustrates the block restorative procedure flow chart of steps of NAND-FLASH of the embodiment of the present invention a kind of, should
Method can specifically include following steps：
Step 101 detects NAND-FLASH into row block, determines the error block in the NAND-FLASH.
In the test phase of NAND-FLASH memories, it will usually be detected into row block to NAND-FLASH memories, this hair
Block detection in bright embodiment is the block detection for each calibrated bolck and the progress of the first spare block in NAND-FLASH, into
And determine error block, when being detected into row block, the block that cannot be normally carried out operation is generally determined as the block that malfunctions.NAND-
FLASH memory is usually made of calibrated bolck and spare block.The spare block in NAND-FLASH memories for malfunctioning
The block that block is repaired, the spare block are divided into as the first spare block and the second spare block, wherein the expression of the first spare block has made
Used spare block, the second spare block indicate original spare block.By being detected into row block to NAND-FLASH memories,
The error block determined be likely to be the calibrated bolck of error it could also be possible that error the first spare block, for example, above-mentioned error
Spare block .B.
Step 102, when the error block is the first spare block, by the error block labeled as bad, and utilization second is standby
The error block is repaired with block.
If the error block is the first spare block, just the error block can be ensured through this in this way labeled as bad
When the address of error block accesses, which will not carry out on the first spare block of the error.For example, calibrated bolck .A
There is mistake, the address 01 of the calibrated bolck .A of the error is written in spare block .B, completes to repair operation, then passing through address
01 when access, and can be carried out in the tops spare block .B, if mistake occurs in spare block .B, pass through ground
It when location 01 accesses, still can be carried out on the spare block .B of the error, by the error block labeled as bad, it is ensured that
When being accessed by the address of the error block, which will not carry out on the error block, exemplary, by the standby of error
After being labeled as badly with block .B, just impenetrably location 01 accesses to the spare block .B of the error, avoids to the error
Spare block .B ineffective access.
Assuming that spare block .C is the second spare block, the spare block .B of above-mentioned error is repaired using spare block .C, is repaiied
After the completion of multiple, due to the spare block .B of the error have been labeled as it is bad, when being accessed by address 01, only meeting
It accesses to spare block .C, will not access to the spare block .B of error, avoid the generation of conflict, ensure that access
It can be normally carried out, so that spare block .C has reached effect to the reparation operation that the spare block .B of above-mentioned error is carried out.
Step 103, when the error block be calibrated bolck when, the error block is repaired with second spare block.
Since the error block is calibrated bolck, then after directly being repaired to the error block with the second spare block, it will not
Occur operating invalid problem because repairing caused by conflict, therefore can be directly with the second spare block directly to the error block
It is repaired.
In conclusion the block restorative procedure of NAND-FLASH provided in an embodiment of the present invention a kind of, is detecting error block
Later, can be carried out according to the type of error block it is corresponding repair operation, when the error block is the first spare block, first by this first
Spare block recycles the second spare block to repair first spare block labeled as bad, so, since this is first spare
Block can be marked as bad, and therefore, even if having had been written into the address for being repaired block before in the first spare block, accessing, this is first standby
With when block also access can be excluded because of its bad flag bit, the ineffective access to first spare block is not only avoided, is improved
Access efficiency accesses institute while moreover, avoiding to identical the first spare block and the second spare block for repairing address
Caused by access conflict, ensure that the reparation carried out to first spare block using the second spare block operation can reach effect,
So that repairing resource will not be wasted.
Embodiment two
With reference to Fig. 2-1, it illustrates the block restorative procedure steps flow charts of another NAND-FLASH of the embodiment of the present invention
Figure, this method can specifically include following steps：
Step 201 detects NAND-FLASH into row block, determines the error block in the NAND-FLASH.
Wherein, block detection is the block inspection for each calibrated bolck and the progress of the first spare block in NAND-FLASH
It surveys.Exemplary, Fig. 2-2 is a kind of method and step flow chart of determining error block provided in an embodiment of the present invention, such as Fig. 2-2 institutes
Show, this method can specifically include：
Step 2011, the object block into the NAND-FLASH program one group of detection data.
Due to containing multiple pieces in NAND-FLASH, before being programmed, an object block can be first determined,
For determine object block method, the embodiment of the present invention does not limit, exemplary, can by needed in NAND-FLASH into
Multiple pieces of row detection are randomly choosed, to determine object block；It will can also be needed in NAND-FLASH in a certain order
To be detected multiple pieces are determined as object block successively.The detection data can be one section of data defined at random, as long as can
Being normally carried out for programming is influenced to ensure the detection data not, it is not limited in the embodiment of the present invention.
Step 2012 is read out target data in the block, by the target data read out and the test
Data are compared.
Above-mentioned test data is all programmed after finishing, can be read out, will read to completing the object block after programming
The target data and above-mentioned test data taken out are compared, exemplary, can be by the target data and test data by
Position comparison.
During compare by turn, target data and position inconsistent in test data can be determined as malfunctioning
Position, is then arranged a preset ratio, if after comparison is completed, the ratio of error bit number has been more than the preset ratio, then really
The data that set the goal and test data are inconsistent, whereas if the ratio of error bit number is not above the preset ratio, it is determined that
Target data is consistent with test data.For the occurrence of the preset ratio, the embodiment of the present invention does not limit, when setting
It can be arranged according to actual needs.
If step 2013, the target data are consistent with the test data, it is determined that the object block is normal blocks.
It is exactly that the ratio of error bit number is not above preset ratio, determines that object block is normal blocks.
If step 2014, the target data and the test data are inconsistent, it is determined that the object block is error
Block.
It is exactly that the ratio of error bit number has been more than preset ratio, determines that object block is error block.
The above is a kind of method of schematic determining error block provided in an embodiment of the present invention, in the another of the present invention
In alternative embodiment, error block can also be determined by other methods, the method for specifically determining error block, the present invention
Embodiment does not limit.
Step 202, the type for determining the error block.
Wherein, the type of the error can be calibrated bolck and the first spare block.Fig. 2-3 is provided in an embodiment of the present invention
A kind of method and step flow chart for the type determining the error block, as shown in Fig. 2-2, this method can specifically include：
Step 2021 is compared the flag bit of the address of the error block and all spare blocks one by one.
All spare blocks include the first all spare blocks and the second all spare blocks.It can be wrapped in the flag bit
The address of spare block is included, can also include indicating the whether used flag bit of spare block in the flag bit, compared one by one
To when, the address for including in the address for the block that malfunctions and each spare block flag bit can be compared, if there is with
The consistent spare block of the error block address, then it is assumed that compare successfully, whereas if being not present consistent with the error block address standby
With block, then it is assumed that compare failure.
If step 2022 compares successfully, flag bit detection is carried out to comparing successful spare block, determines the error
The type of block.
Due to the address that the address for including in the flag bit of the second spare block is randomly generated, there may be random generate
Address situation consistent with the address of the error block, it is therefore desirable to the successful spare block of the comparison carry out flag bit detection, into
One step judges the type of the error block.Specifically, step 2022 may include：
If step 2022a, the described flag bit that used for comparing successful spare block is active states, it is determined that described
The type of error block is the first spare block.
When the block that malfunctions is repaired, it will usually the first spare block is set to active states using flag bit, because
This can determine that the type of the error block is if the flag bit that used of the successful spare block of the comparison is active states
First spare block.
If step 2022b, the described flag bit that used for comparing successful spare block is Pending The Entry Into Force state, it is determined that institute
The type for stating error block is calibrated bolck.
If the flag bit that used of the successful spare block of the comparison is Pending The Entry Into Force state, explanation can be determined above-mentionedly
It is successfully to cause to compare successfully, and then can determine because the address generated at random is consistent with the address of the error block that location, which compares,
The type for going out the error block is calibrated bolck.
If step 2023 compares failure, it is determined that the type of the error block is calibrated bolck.
If comparing failure, illustrate the address of the error block there is no being written in spare block, thus may determine that the error
Block is calibrated bolck.
Step 203, when the error block is the first spare block, by the error block labeled as bad, and utilization second is standby
The error block is repaired with block.
It is exemplary, it can be realized the error block labeled as bad by following step 2031：
Indicate that error block is that bad flag bit comes into force in step 2031, the setting error block mark position.
In practical application, it can be that the expression block that malfunctions is arranged be bad flag bit is high level state, that is, be exactly 1, with
This is effective to indicate the flag bit, can also be that the expression block that malfunctions is arranged be bad flag bit is low level state, that is, is exactly
0, to indicate that the flag bit is effective.The embodiment of the present invention indicates that error block is bad for being specifically arranged in the error block mark position
The method that comes into force of flag bit do not limit.
It is exemplary, it can be by following methods, to realize using the second spare block to the error block in the embodiment of the present invention
It is repaired, specifically, this method may include：
Step A, the address of the error block is written in the address mark position of the second spare block.
Step B, second spare block is set to active states using flag bit.
Step 204, when the error block be calibrated bolck when, the error block is repaired with second spare block.
It is exemplary, when the error block is calibrated bolck, directly using the second spare block to the calibrated bolck of the error into
The problem of row reparation is not in access conflict.Specifically, can be in method shown in 203 through the above steps, to realize use
Second spare block repairs the error block.
In practical application, when to NAND-FLASH memories detect for the first time, it is convenient to omit falling to judge should
The step of type of error block, i.e. step 202, directly the error block that detected is repaired, therefore detected for the first time
The error block come is all calibrated bolck, and the case where error block is the first spare block is not present, and can save repair operation in this way
Time reduces the cost for repairing operation.
In conclusion the block restorative procedure of NAND-FLASH provided in an embodiment of the present invention a kind of, is detecting error block
Later, can be carried out according to the type of error block it is corresponding repair operation, when the error block is the first spare block, first by this first
Spare block recycles the second spare block to repair first spare block labeled as bad, so, since this is first spare
Block can be marked as bad, and therefore, even if having had been written into the address for being repaired block before in the first spare block, accessing, this is first standby
With when block also access can be excluded because of its bad flag bit, the ineffective access to first spare block is not only avoided, is improved
Access efficiency accesses institute while moreover, avoiding to identical the first spare block and the second spare block for repairing address
Caused by access conflict, ensure that the reparation carried out to first spare block using the second spare block operation can reach effect,
So that repairing resource will not be wasted.
Embodiment three
Referring to Fig. 3, it illustrates a kind of block diagrams of the block repair apparatus 30 of NAND-FLASH of the embodiment of the present invention, such as scheme
Shown in 3, which may include：
First determining module 301 determines the error in the NAND-FLASH for being detected into row block to NAND-FLASH
Block.
First repair module 302, it is bad for when the error block is the first spare block, the error block to be labeled as,
And the error block is repaired using the second spare block.
Second repair module 303 is used for when the error block is calibrated bolck, with second spare block to the error
Block is repaired.
In conclusion the block repair apparatus of NAND-FLASH provided in an embodiment of the present invention a kind of, is detecting error block
Later, can be carried out according to the type of error block it is corresponding repair operation, when the error block is the first spare block, first by this first
Spare block recycles the second spare block to repair first spare block labeled as bad, so, since this is first spare
Block can be marked as bad, and therefore, even if having had been written into the address for being repaired block before in the first spare block, accessing, this is first standby
With when block also access can be excluded because of its bad flag bit, the ineffective access to first spare block is not only avoided, is improved
Access efficiency accesses institute while moreover, avoiding to identical the first spare block and the second spare block for repairing address
Caused by access conflict, ensure that the reparation carried out to first spare block using the second spare block operation can reach effect,
So that repairing resource will not be wasted.
Example IV
Referring to Fig. 4-1, it illustrates the block diagram of the block repair apparatus 40 of another NAND-FLASH of the embodiment of the present invention,
As shown in Fig. 4-1, which may include：
First determining module 401 determines the error in the NAND-FLASH for being detected into row block to NAND-FLASH
Block.
First repair module 402, it is bad for when the error block is the first spare block, the error block to be labeled as,
And the error block is repaired using the second spare block.
Second repair module 403 is used for when the error block is calibrated bolck, with second spare block to the error
Block is repaired.
Referring to Fig. 4-2, it illustrates the block diagram of the block repair apparatus 40 of another NAND-FLASH of the embodiment of the present invention,
As shown in the Fig. 4-2, which may include：Determining module 401, the first repair module 402, the second repair module 403 and
Judgment module 404.
First determining module 401 determines the error in the NAND-FLASH for being detected into row block to NAND-FLASH
Block.
First repair module 402, it is bad for when the error block is the first spare block, the error block to be labeled as,
And the error block is repaired using the second spare block.
Second repair module 403 is used for when the error block is calibrated bolck, with second spare block to the error
Block is repaired.
Second determining module 404, the type for determining the error block, the type for malfunctioning block include：Calibrated bolck
With the first spare block.
Fig. 4-3 is a kind of block diagram of second determining module 404 provided in an embodiment of the present invention, and as shown in Fig. 4-3, second really
Cover half block 404 may include：
Submodule 4041 is compared, for being compared the flag bit of the address of the error block and all spare blocks one by one
It is right.
If first determination sub-module 4042 carries out flag bit detection for comparing successfully to comparing successfully spare block,
Determine the type of the error block.
Second determination sub-module 4043, if for comparing failure, it is determined that the type of the error block is calibrated bolck.
Wherein, first determination sub-module 4042, can be also used for：
If the flag bit that used for comparing successfully spare block is active states, it is determined that the type of the error block
For the first spare block.
If the flag bit that used for comparing successfully spare block is Pending The Entry Into Force state, it is determined that the class of the error block
Type is calibrated bolck.
Optionally, first repair module 402, can be used for：
It is arranged in the error block mark position and indicates that error block is that bad flag bit comes into force.
In conclusion the block repair apparatus of NAND-FLASH provided in an embodiment of the present invention a kind of, is detecting error block
Later, can be carried out according to the type of error block it is corresponding repair operation, when the error block is the first spare block, first by this first
Spare block recycles the second spare block to repair first spare block labeled as bad, so, since this is first spare
Block can be marked as bad, and therefore, even if having had been written into the address for being repaired block before in the first spare block, accessing, this is first standby
With when block also access can be excluded because of its bad flag bit, the ineffective access to first spare block is not only avoided, is improved
Access efficiency accesses institute while moreover, avoiding to identical the first spare block and the second spare block for repairing address
Caused by access conflict, ensure that the reparation carried out to first spare block using the second spare block operation can reach effect,
So that repairing resource will not be wasted.
For device embodiments, since it is basically similar to the method embodiment, so fairly simple, the correlation of description
Place illustrates referring to the part of embodiment of the method.
In specification mentioned herein, numerous specific details are set forth.It is to be appreciated, however, that the embodiment of the present invention
It can put into practice without these specific details.In some instances, be not been shown in detail well known method, structure and
Technology, so as not to obscure the understanding of this description.
Similarly, it should be understood that in order to simplify the present invention and help to understand one or more of each inventive aspect,
Above in the description of exemplary embodiment of the present invention, each feature of the invention is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the invention should be construed to reflect following intention：It is i.e. required to protect
Shield the present invention claims the more features of feature than being expressly recited in each claim.More precisely, as following
Claims reflect as, inventive aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific implementation mode are expressly incorporated in the specific implementation mode, wherein each claim itself
All as a separate embodiment of the present invention.
Those skilled in the art, which are appreciated that, to carry out adaptively the module in the equipment in embodiment
Change and they are arranged in the one or more equipment different from the embodiment.It can be the module or list in embodiment
Member or component be combined into a module or unit or component, and can be divided into addition multiple submodule or subelement or
Sub-component.Other than such feature and/or at least some of process or unit exclude each other, it may be used any
Combination is disclosed to all features disclosed in this specification (including adjoint claim, abstract and attached drawing) and so to appoint
Where all processes or unit of method or equipment are combined.Unless expressly stated otherwise, this specification (including adjoint power
Profit requires, abstract and attached drawing) disclosed in each feature can be by providing the alternative features of identical, equivalent or similar purpose come generation
It replaces.
In addition, it will be appreciated by those of skill in the art that although some embodiments described herein include other embodiments
In included certain features rather than other feature, but the combination of the feature of different embodiments means in of the invention
Within the scope of and form different embodiments.For example, in the following claims, embodiment claimed is appointed
One of meaning mode can use in any combination.
It should be noted that the present invention will be described rather than limits the invention for above-described embodiment, and ability
Field technique personnel can design alternative embodiment without departing from the scope of the appended claims.In the claims,
Any reference mark between bracket should not be configured to limitations on claims.Word "comprising" does not exclude the presence of not
Element or step listed in the claims.Word "a" or "an" before element does not exclude the presence of multiple such
Element.The present invention can be by means of including the hardware of several different elements and being come by means of properly programmed computer real
It is existing.In the unit claims listing several devices, several in these devices can be by the same hardware branch
To embody.The use of word first, second, and third does not indicate that any sequence.These words can be explained and be run after fame
Claim.
Claims (10)
1. the block restorative procedure of NAND-FLASH a kind of, which is characterized in that the method includes：
NAND-FLASH is detected into row block, determines the error block in the NAND-FLASH；
When the error block be the first spare block when, by the error block be labeled as it is bad, and using the second spare block to it is described go out
Wrong block is repaired；
When the error block is calibrated bolck, the error block is repaired with second spare block.
2. according to the method described in claim 1, it is characterized in that, described in, into row block detection, being determined to NAND-FLASH
After the step of error block in NAND-FLASH, the method further includes：
Determine that the type of the error block, the type of the error block include：Calibrated bolck and the first spare block.
3. according to the method described in claim 2, it is characterized in that, the determination it is described error block type the step of, including：
The flag bit of the address of the error block and all spare blocks is compared one by one；
If compared successfully, flag bit detection is carried out to comparing successful spare block, determines the type of the error block；
If comparing failure, it is determined that the type of the error block is calibrated bolck.
4. according to the method described in claim 3, it is characterized in that, described pair compares successful spare block and carries out flag bit inspection
The step of surveying, determining the type of the error block, including：
If the flag bit that use for comparing successful spare block is active states, it is determined that the type for malfunctioning block is
First spare block；
If the flag bit that used for comparing successful spare block is Pending The Entry Into Force state, it is determined that the type of the error block
For calibrated bolck.
5. according to the method described in claim 1, it is characterized in that, it is described by the error block be labeled as bad step, including：
It is arranged in the error block mark position and indicates that error block is that bad flag bit comes into force.
6. a kind of block repair apparatus of NAND-FLASH, which is characterized in that described device includes：
First determining module determines the error block in the NAND-FLASH for being detected into row block to NAND-FLASH；
First repair module, it is bad for when the error block is the first spare block, the error block to be labeled as, and utilize the
Two spare blocks repair the error block；
Second repair module, for when the error block is calibrated bolck, being carried out to the error block with second spare block
It repairs.
7. device according to claim 6, which is characterized in that described device further includes：
Second determining module, the type for determining the error block, the type for malfunctioning block include：Calibrated bolck and first standby
With block.
8. device according to claim 7, which is characterized in that first determining module, including：
Submodule is compared, for being compared the flag bit of the address of the error block and all spare blocks one by one；
If first determination sub-module carries out flag bit detection to comparing successful spare block, determines institute for comparing successfully
State the type of error block；
Second determination sub-module, if for comparing failure, it is determined that the type of the error block is calibrated bolck.
9. device according to claim 8, which is characterized in that first determination sub-module is used for：
If the flag bit that use for comparing successful spare block is active states, it is determined that the type for malfunctioning block is
First spare block；
If the flag bit that used for comparing successful spare block is Pending The Entry Into Force state, it is determined that the type of the error block
For calibrated bolck.
10. device according to claim 6, which is characterized in that first repair module is used for：
It is arranged in the error block mark position and indicates that error block is that bad flag bit comes into force.
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| CN201710136116.1A CN108573735B (en) | 2017-03-08 | 2017-03-08 | NAND-FLASH block repair method and device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110546709A (en) * | 2019-07-12 | 2019-12-06 | 长江存储科技有限责任公司 | Memory device providing bad column repair and method of operating the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6260156B1 (en) * | 1998-12-04 | 2001-07-10 | Datalight, Inc. | Method and system for managing bad areas in flash memory |
| CN1567460A (en) * | 2003-06-10 | 2005-01-19 | 联发科技股份有限公司 | Data breakage management method of optical storage media |
| CN1991788A (en) * | 2005-12-30 | 2007-07-04 | 深圳市桑达实业股份有限公司 | Method for treating broken block when using flash memory in tax-controlled cashing machine |
| US20080282045A1 (en) * | 2007-05-09 | 2008-11-13 | Sudeep Biswas | Garbage collection in storage devices based on flash memories |
| CN104615550A (en) * | 2015-01-27 | 2015-05-13 | 华为技术有限公司 | Storage equipment bad block processing method and device and storage equipment |
| CN105225695A (en) * | 2014-05-28 | 2016-01-06 | 上海复旦微电子集团股份有限公司 | The method for deleting of flash memory and flash memory |
| CN105489246A (en) * | 2014-09-16 | 2016-04-13 | 华邦电子股份有限公司 | NOR flash memory and repair method thereof |
-
2017
- 2017-03-08 CN CN201710136116.1A patent/CN108573735B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6260156B1 (en) * | 1998-12-04 | 2001-07-10 | Datalight, Inc. | Method and system for managing bad areas in flash memory |
| CN1567460A (en) * | 2003-06-10 | 2005-01-19 | 联发科技股份有限公司 | Data breakage management method of optical storage media |
| CN1991788A (en) * | 2005-12-30 | 2007-07-04 | 深圳市桑达实业股份有限公司 | Method for treating broken block when using flash memory in tax-controlled cashing machine |
| US20080282045A1 (en) * | 2007-05-09 | 2008-11-13 | Sudeep Biswas | Garbage collection in storage devices based on flash memories |
| CN105225695A (en) * | 2014-05-28 | 2016-01-06 | 上海复旦微电子集团股份有限公司 | The method for deleting of flash memory and flash memory |
| CN105489246A (en) * | 2014-09-16 | 2016-04-13 | 华邦电子股份有限公司 | NOR flash memory and repair method thereof |
| CN104615550A (en) * | 2015-01-27 | 2015-05-13 | 华为技术有限公司 | Storage equipment bad block processing method and device and storage equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110546709A (en) * | 2019-07-12 | 2019-12-06 | 长江存储科技有限责任公司 | Memory device providing bad column repair and method of operating the same |
| CN110546709B (en) * | 2019-07-12 | 2021-11-23 | 长江存储科技有限责任公司 | Memory device providing bad column repair and method of operating the same |
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| CN108573735B (en) | 2020-12-11 |
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