CN108533992A - A kind of selective radiation light source - Google Patents
A kind of selective radiation light source Download PDFInfo
- Publication number
- CN108533992A CN108533992A CN201810354335.1A CN201810354335A CN108533992A CN 108533992 A CN108533992 A CN 108533992A CN 201810354335 A CN201810354335 A CN 201810354335A CN 108533992 A CN108533992 A CN 108533992A
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- China
- Prior art keywords
- selective radiation
- light source
- filament
- radiation light
- source according
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
Abstract
The invention belongs to lighting technical fields, more particularly to a kind of selective radiation light source, including selective radiation filament, glass bulb and two electrodes, the selective radiation filament is located at the center of glass bulb, and the glass bulb periphery is in spheroid shape, and internal is in vacuum state, outer surface is coated with infrared reflection coating, and described two electrodes are separately fixed at selective radiation filament, and each electrode one end is welded with selective radiation filament, the other end is pierced by glass bulb, is connect with external circuit；The selective radiation filament uses band-like tantalum-tungsten alloy.The present invention solves the problems, such as that light source utilization rate is not high in the prior art, using band-like selective radiation filament, in conjunction with the infrared reflection coating to match, realizes the purpose for obtaining high luminous efficiency at a lower temperature.
Description
Technical field
The invention belongs to lighting technical fields, and in particular to a kind of selective radiation light source.
Background technology
Incandescent lamp gives off visible light to be illuminated by heat filament.Since its main radiation wave band is all infrared
Region, therefore light efficiency is very low.The luminous efficiency for improving incandescent lamp needs to enhance its radiation in visible region, and reduces
Its radiation in infrared band.
By coating infrared reflecting layer in tube face, infrared light reflection can be returned filament, be re-used by filament, by
This improves the light efficiency of incandescent lamp.In recent years, there are many examples that incandescent lamp light efficiency is improved using infrared reflecting layer
(CN1216155A, CN101410938A, CN101529554A).But the infrared band of grey-body radiation is very wide, it is difficult to all have
Effect reflection；Meanwhile traditional filament absorption cross-section is too small, it is not high to the absorption efficiency of reflected light.Therefore, infrared external reflection is simply used
The light efficiency of the incandescent lamp of film is still relatively low.
Different from the grey-body radiation of traditional filament, selective radiation spectrum is concentrated mainly on one or several wave bands.Profit
Filament is made with selective radiator, its radiation in visible region can be enhanced, to greatly improve the luminous efficiency of light source.
Invention content
For the problems of the prior art, the present invention provides a kind of selective radiation light source, passes through the selective spoke of filament
It penetrates, in conjunction with the infrared reflection film of tube face, increases substantially the luminous efficiency of light source.
To realize the above technical purpose, the technical scheme is that：
A kind of selective radiation light source, including selective radiation filament, glass bulb and two electrodes, the selectivity spoke
Shot-light silk is located at the center of glass bulb, and the glass bulb periphery is in spheroid shape, and internal is in vacuum state, and outer surface applies
There are infrared reflection coating, described two electrodes to be separately fixed at selective radiation filament, and each electrode one end and selective spoke
Shot-light wire bond connects, and the other end is pierced by glass bulb, is connect with external circuit；The selective radiation filament is closed using band-like tantalum tungsten
Gold.
The thickness of the band-like tantalum-tungsten alloy is 10-100 μm.
The thickness of the band-like tantalum-tungsten alloy is 10-100 μm.
In the band-like tantalum-tungsten alloy, the mass content of tungsten is 0.1-10%.
The band-like tantalum-tungsten alloy surface etch has micro-nano structure, and deposition of rare-earth oxide-doped hafnium oxide in surface is thin
Film.
The hafnium oxide that the rare earth oxide doping hafnia film is adulterated using rare earth praseodymium oxide and holmia is thin
Film.
In the rare earth praseodymium oxide and the hafnia film of holmia doping, the doping content 0.1- of praseodymium oxide
10%.
In the rare earth praseodymium oxide and the hafnia film of holmia doping, the doping content 0.1- of holimium oxide
10%.
The infrared reflection coating is formed using titanium deoxid film and silica membrane alternating deposit.
From the above, it can be seen that the present invention has following advantages：
The present invention solves the problems, such as that light source utilization rate is not high in the prior art, using band-like selective radiation filament, knot
The infrared reflection coating to match is closed, the purpose for obtaining high luminous efficiency at a lower temperature is realized.
Description of the drawings
Fig. 1 is the selective radiation light-source structure schematic diagram in embodiment 1.
Fig. 2 is the sectional structure chart of the selective radiation light source in embodiment 1.
Fig. 3 is the sectional view of the filament in embodiment 1.
Fig. 4 is the grey-body radiation of light source and selective radiation spectrogram in embodiment 1.
Specific implementation mode
In conjunction with Fig. 1 to Fig. 4, the specific embodiment that the present invention will be described in detail, but the claim of the present invention is not done
Any restriction.
It is attached it is shown in FIG. 1 be selective radiation light source structural schematic diagram.Light source is by selective radiation filament 1, Glass lamp
Bubble 2 and two electrodes 3 form.Wherein selective radiation filament 1 is bar-shape, is located among glass bulb 2, glass bulb 2
Inside is evacuated, and two electrodes 3 are located at the both ends of selective radiation filament 1, and one end of each electrode and selective radiation
Filament 1 welds, and the other end is sealed by glass bulb, for being connect with external circuit.
Attached drawing 2 show the schematic cross-section of light source, and the wherein section of glass bulb 2 is ellipse, by transparent glass 2a
And the infrared reflection film 2b compositions coated in the outer surfaces transparent glass 2a.
It is attached it is shown in Fig. 3 be selective radiation filament sectional view.Filament main body is the ribbon filament of tantalum-tungsten alloy composition
1a, upper and lower surface etch the hafnia film 1c of micro-nano structure 1b, redeposited praseodymium and holmium doping.With tungsten phase
Than the ductility of tantalum is more preferable and coefficient of thermal expansion is small, therefore is more suitable for being prepared into ribbon filament.The incorporation of appropriate tungsten, can improve
The fusing point and intensity of metal tantalum enhance hot properties.Wherein, the quality doping content of tungsten is between 0.1-10%, ribbon filament
The thickness of 1a is 10-100 microns, and length is 10-100 millimeters.To improve filament in the radiance of short-wave band, need to filament
Surface is handled.Such as tantalum-tungsten alloy upper and lower surface is performed etching using femtosecond pulse, forms micro-nano structure 1b, including
The protrusion of micron-sized hole and a large amount of nano-scales.This micro-nano structure can substantially enhance filament surface short-wave band spoke
Penetrate rate.
To further enhance the selective radiation characteristic of filament, there is rear-earth-doped hafnia film in filament surface deposition
1c.Wherein hafnium oxide has good high-temperature stability, can prevent changing for metallic filament evaporation under vacuum and surface texture
Become.Meanwhile the metal/oxide medium interface being consequently formed can effectively reflect infrared light.In present specification, hafnia film
Mixed with rare earth oxide (Pr6O11) and holimium oxide (Ho2O3), quality doping content is between 0.1-10%.Both rare earths member
Element has higher radiance in visible region, and its oxide all has higher fusing point, can enhance filament at high temperature
Short-wave band radiance.And pass through the comparison of grey-body radiation spectrum and selective radiation spectrum shown in Fig. 4, it can be seen that with ash
Body radiation spectrum is compared, and selective radiation spectrum is very low in 2 microns or more of infrared luminous radiance, and the shortwave wave within 2 microns
The radiance of section substantially enhances.This selective radiation filament is combined with the infrared reflection film outside glass bulb, can be substantially
Improve radiation of the light source in visible region.
The ribbon filament that above-mentioned light source uses has larger absorption cross-section, is located among ellipsoidal glass light bulb, can be with
The reflected energy of effective heat absorbing glass light bulb, to improve the energy utilization efficiency of light source.The selective spoke used simultaneously
The radiation wave band of shot-light silk is concentrated mainly on 2 microns of short-wave bands below of wavelength, therefore using selection TiO2/SiO2Multi-layer thin
Film makes wavelength at 0.75 micron to the infrared light reflection in 2 micron ranges as infrared reflecting layer, by adjusting thicknesses of layers
Return filament.
Currently used reflective film material can be divided into two classes, including tin-doped indium oxide (ITO), aluminium-doped zinc oxide
(AZO) transparent conductive films and the one-dimensional photonic crystal film made of different refractivity material alternating deposit such as.It compares
For, transparent conductive film has a preferable reflex to the broadband infrared light of 2 microns of wavelength or more, but to 2 microns with
Under near infrared light reflectivity it is relatively low；And the reflected waveband range relative narrower of one-dimensional photonic crystal film, and by changing two
The thickness parameter of kind thin-film material can adjust its reflected waveband range, reach best reflecting effect.Therefore pass through TiO2/SiO2
The thickness parameter and the deposition number of plies of plural layers reach wavelength and are wanted in 0.75 micron of reflection to the infrared light in 2 micron ranges
It asks, greatly promotes the luminous efficiency of light source.
In conclusion the present invention has the following advantages：
The present invention solves the problems, such as that light source utilization rate is not high in the prior art, using band-like selective radiation filament, knot
The infrared reflection coating to match is closed, the purpose for obtaining high luminous efficiency at a lower temperature is realized.
It is understood that above with respect to the specific descriptions of the present invention, it is merely to illustrate the present invention and is not limited to this
Technical solution described in inventive embodiments.It will be understood by those of ordinary skill in the art that still can be carried out to the present invention
Modification or equivalent replacement, to reach identical technique effect；As long as meet use needs, all protection scope of the present invention it
It is interior.
Claims (9)
1. a kind of selective radiation light source, it is characterised in that：Including selective radiation filament, glass bulb and two electrodes, institute
The center that selective radiation filament is located at glass bulb is stated, the glass bulb periphery is in spheroid shape, and internal is in vacuum shape
State, outer surface are coated with infrared reflection coating, and described two electrodes are separately fixed at selective radiation filament, and each electrode one end
It is welded with selective radiation filament, the other end is pierced by glass bulb, is connect with external circuit；The selective radiation filament uses band
Shape tantalum-tungsten alloy.
2. a kind of selective radiation light source according to claim 1, it is characterised in that：The thickness of the band-like tantalum-tungsten alloy
It is 10-100 μm.
3. a kind of selective radiation light source according to claim 1, it is characterised in that：The thickness of the band-like tantalum-tungsten alloy
It is 10-100 μm.
4. a kind of selective radiation light source according to claim 1, it is characterised in that：In the band-like tantalum-tungsten alloy, tungsten
Mass content be 0.1-10%.
5. a kind of selective radiation light source according to claim 1, it is characterised in that：It carves on the band-like tantalum-tungsten alloy surface
Erosion has micro-nano structure, and the oxide-doped hafnia film of surface deposition of rare-earth.
6. a kind of selective radiation light source according to claim 5, it is characterised in that：The rare earth oxide doping oxidation
The hafnia film that hafnium film is adulterated using rare earth praseodymium oxide and holmia.
7. a kind of selective radiation light source according to claim 6, it is characterised in that：The rare earth praseodymium oxide and holmium oxygen
In the hafnia film of compound doping, the doping content 0.1-10% of praseodymium oxide.
8. a kind of selective radiation light source according to claim 6, it is characterised in that：The rare earth praseodymium oxide and holmium oxygen
In the hafnia film of compound doping, the doping content 0.1-10% of holimium oxide.
9. a kind of selective radiation light source according to claim 1, it is characterised in that：The infrared reflection coating uses two
Thin film of titanium oxide and silica membrane alternating deposit form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810354335.1A CN108533992A (en) | 2018-04-19 | 2018-04-19 | A kind of selective radiation light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810354335.1A CN108533992A (en) | 2018-04-19 | 2018-04-19 | A kind of selective radiation light source |
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| Publication Number | Publication Date |
|---|---|
| CN108533992A true CN108533992A (en) | 2018-09-14 |
Family
ID=63478466
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810354335.1A Pending CN108533992A (en) | 2018-04-19 | 2018-04-19 | A kind of selective radiation light source |
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Citations (12)
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|---|---|---|---|---|
| CN1112285A (en) * | 1993-10-07 | 1995-11-22 | 菲利浦电子有限公司 | High-pressure metal halide discharge lamp |
| CN1370328A (en) * | 1999-08-22 | 2002-09-18 | Ip2H股份公司 | Light source |
| CN1919769A (en) * | 2006-09-15 | 2007-02-28 | 清华大学 | Photocatalysis thin film with illumination and purifying coupling function and manufacture method thereof |
| CN101111801A (en) * | 2005-01-04 | 2008-01-23 | 皇家飞利浦电子股份有限公司 | Wavelength conversion layers with embedded crystallites |
| CN101405831A (en) * | 2006-03-31 | 2009-04-08 | 通用电气公司 | Light source incorporating a high temperature ceramic composite and gas phase for selective emission |
| CN101529554A (en) * | 2005-04-07 | 2009-09-09 | D·坎宁安 | Incandescent lamp incorporating extended high-reflectivity IR coating and lighting fixture incorporating such an incandescent lamp |
| CN102130264A (en) * | 2010-01-13 | 2011-07-20 | 海洋王照明科技股份有限公司 | Light-emitting element, manufacturing method thereof and light-emitting method |
| CN103497759A (en) * | 2013-09-03 | 2014-01-08 | 东莞上海大学纳米技术研究院 | Visible-light-sensitized rare-earth-complex-doped luminescent gel and preparation method thereof |
| CN104178149A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Hafnium oxide luminescent film, preparing method thereof and electroluminescent device |
| CN104403671A (en) * | 2014-11-26 | 2015-03-11 | 中国计量学院 | Fluoride nanometer crystal for wideband optical amplification and preparation method and application of fluoride nanometer crystal |
| CN104650895A (en) * | 2013-11-18 | 2015-05-27 | 海洋王照明科技股份有限公司 | Praseodymium-holmium-codoped rare earth stannate up-conversion luminescent material and its preparation method and use |
| CN107178716A (en) * | 2017-04-24 | 2017-09-19 | 漳州立达信光电子科技有限公司 | Light uniform filament lamp |
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2018
- 2018-04-19 CN CN201810354335.1A patent/CN108533992A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1112285A (en) * | 1993-10-07 | 1995-11-22 | 菲利浦电子有限公司 | High-pressure metal halide discharge lamp |
| CN1370328A (en) * | 1999-08-22 | 2002-09-18 | Ip2H股份公司 | Light source |
| CN101111801A (en) * | 2005-01-04 | 2008-01-23 | 皇家飞利浦电子股份有限公司 | Wavelength conversion layers with embedded crystallites |
| CN101529554A (en) * | 2005-04-07 | 2009-09-09 | D·坎宁安 | Incandescent lamp incorporating extended high-reflectivity IR coating and lighting fixture incorporating such an incandescent lamp |
| CN101405831A (en) * | 2006-03-31 | 2009-04-08 | 通用电气公司 | Light source incorporating a high temperature ceramic composite and gas phase for selective emission |
| CN1919769A (en) * | 2006-09-15 | 2007-02-28 | 清华大学 | Photocatalysis thin film with illumination and purifying coupling function and manufacture method thereof |
| CN102130264A (en) * | 2010-01-13 | 2011-07-20 | 海洋王照明科技股份有限公司 | Light-emitting element, manufacturing method thereof and light-emitting method |
| CN104178149A (en) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | Hafnium oxide luminescent film, preparing method thereof and electroluminescent device |
| CN103497759A (en) * | 2013-09-03 | 2014-01-08 | 东莞上海大学纳米技术研究院 | Visible-light-sensitized rare-earth-complex-doped luminescent gel and preparation method thereof |
| CN104650895A (en) * | 2013-11-18 | 2015-05-27 | 海洋王照明科技股份有限公司 | Praseodymium-holmium-codoped rare earth stannate up-conversion luminescent material and its preparation method and use |
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| CN107178716A (en) * | 2017-04-24 | 2017-09-19 | 漳州立达信光电子科技有限公司 | Light uniform filament lamp |
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Application publication date: 20180914 |