CN108529554A - A kind of MEMS device and preparation method thereof - Google Patents
A kind of MEMS device and preparation method thereof Download PDFInfo
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- CN108529554A CN108529554A CN201710121271.6A CN201710121271A CN108529554A CN 108529554 A CN108529554 A CN 108529554A CN 201710121271 A CN201710121271 A CN 201710121271A CN 108529554 A CN108529554 A CN 108529554A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
- B81B1/004—Through-holes, i.e. extending from one face to the other face of the wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
Abstract
A kind of MEMS device of present invention offer and preparation method thereof, the method includes:MEMS wafer is provided；Filter layer is formed in the front of the MEMS wafer；Several filter openings are formed in the filter layer；The MEMS wafer is etched by the filter opening, to form groove in the MEMS wafer below the filter opening；MEMS wafer described in thinning back side, to expose the filter opening.According to the production method of MEMS device provided by the invention, first filter layer is formed in the front of MEMS wafer, and several filter openings are formed in the filter layer, then the MEMS wafer is etched to form groove in the MEMS wafer by the filter opening, MEMS wafer described in thinning back side is to expose the filter opening of the filter layer later.The method can effectively simplify the manufacture craft of MEMS device, reduce production cost.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of MEMS device and preparation method thereof.
Background technology
In consumer electronics field, multifunctional equipment is increasingly liked by consumer, compared to the simple equipment of function,
Multifunctional equipment manufacturing process will be more complicated, for example need to integrate the chip of multiple and different functions in circuit version, thus go out
3D integrated circuits (integrated circuit, IC) technology is showed.Wherein, microelectromechanical systems (Micro-
Electromechanical System, MEMS) volume, power consumption, weight and in price have fairly obvious advantage,
So far a variety of different sensors, such as acoustic sensor, pressure sensor, inertial sensor and others have been developed
Sensor.
MEMS device complex manufacturing technology, with high costs at present.Therefore, it is necessary to propose a kind of system of new MEMS device
Make method, to solve the above problems, simplifies the manufacture craft of MEMS device, reduce production cost.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, a kind of MEMS device of present invention offer and preparation method thereof, including：
MEMS wafer is provided；
Filter layer is formed in the front of the MEMS wafer；
Several filter openings are formed in the filter layer；
The MEMS wafer is etched by the filter opening, it is recessed to be formed in the MEMS wafer below the filter opening
Slot；
MEMS wafer described in thinning back side, to expose the filter opening.
Further, the filter layer includes polyimide layer.
Further, the method for several filter openings being formed in the filter layer includes：Pattern is carried out to the polyimide layer
Change to form the filter opening.
Further, further include the steps that polyimide layer described in curing process after patterning the polyimide layer.
Further, further include before the front of the MEMS wafer forms the filter layer the MEMS wafer just
Face forms the step of support construction.
Further, the support construction includes several master consoles arranged in a crossed manner and auxiliary overarm.
Further, the master console and auxiliary overarm intersection surround several polygonal regions.
Further, the polygonal region includes quadrangle, pentagon or hexagon.
Further, the material of the support construction includes polyimides.
Further, the method for etching the MEMS wafer includes wet etching.
Further, further include the steps that scribing is carried out to the MEMS wafer after MEMS wafer described in thinning back side.
Further, the MEMS wafer further includes the region of pre-formed Cutting Road, and the filter is formed in the filter layer
Further include the steps that the filter layer for the overlying regions for removing pre-formed Cutting Road while hole, also when forming the groove
Include the region of the etching pre-formed Cutting Road, the step of to form Cutting Road in the MEMS wafer.
Further, further include being bonded the front of the MEMS wafer by adhesive layer before MEMS wafer described in thinning back side
Step on to carrier；MEMS wafer described in thinning back side further includes by the MEMS wafer from institute to expose after the filter opening
State the step of being separated on carrier.
Further, the carrier includes glass substrate.
In addition, the present invention also provides a kind of MEMS device comprising：
MEMS wafer；
The front of the MEMS wafer is formed with filter layer；
Several filter openings are formed in the filter layer；
The back side of the MEMS wafer forms fluted, the groove exposing filter opening.
Further, the filter layer includes polyimide layer.
Further, it is also formed with support construction between the MEMS wafer and the filter layer.
Further, the support construction includes several master consoles arranged in a crossed manner and auxiliary overarm.
Further, the master console and auxiliary overarm intersection surround several polygonal regions.
Further, the polygonal region includes quadrangle, pentagon or hexagon.
Further, further include Cutting Road in the MEMS wafer.
According to the production method of MEMS device provided by the invention, filter layer is formed in the front of MEMS wafer first, and
Several filter openings are formed in the filter layer, and the MEMS wafer is then etched in the MEMS wafer by the filter opening
Groove is formed, MEMS wafer described in thinning back side is to expose the filter opening of the filter layer later.The method can effectively simplify
The manufacture craft of MEMS device reduces production cost.
Description of the drawings
The embodiment of the present invention is described in more detail in conjunction with the accompanying drawings, the above and other purposes of the present invention,
Feature and advantage will be apparent.Attached drawing is used for providing further understanding the embodiment of the present invention, and constitutes explanation
A part for book is not construed as limiting the invention for explaining the present invention together with the embodiment of the present invention.In the accompanying drawings,
Identical reference label typically represents same parts or step.
In attached drawing：
Figure 1A -1D are the schematic cross sectional views of the device obtained respectively the step of implementation successively according to the prior art.
Fig. 2A -2D are the devices that the step of according to an exemplary embodiment of the present one method is implemented successively obtains respectively
Schematic cross sectional view.
Fig. 2 E are according to an exemplary embodiment of the present one schematic plans of device that are obtained of method.
Fig. 3 A-3D are the devices that the step of according to an exemplary embodiment of the present two method is implemented successively obtains respectively
Schematic cross sectional view.
Fig. 3 E are according to an exemplary embodiment of the present two schematic plans of device that are obtained of method.
Fig. 4 A-4E are the devices that the step of according to an exemplary embodiment of the present three method is implemented successively obtains respectively
Schematic cross sectional view.
Fig. 4 F are according to an exemplary embodiment of the present three schematic plans of device that are obtained of method.
Fig. 5 A-5E are the devices that the step of according to an exemplary embodiment of the present four method is implemented successively obtains respectively
Schematic cross sectional view.
Fig. 5 F are according to an exemplary embodiment of the present four schematic plans of device that are obtained of method.
Fig. 6 is a kind of schematic flow chart of the manufacturing method of MEMS device according to an exemplary embodiment of the present invention.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions
Outside, the present invention can also have other embodiment.
It is the production method of MEMS device in the prior art as shown in figures 1 a-1d.First, as shown in Figure 1A, MEMS is provided
Wafer 100 forms in the front of the MEMS wafer 100 and is sequentially formed with silicon dioxide layer 101 and polysilicon layer from the bottom to top
102, and the polysilicon layer 102 is patterned by photoetching process；Then, as shown in Figure 1B, in the MEMS wafer
The interim bonding glue 103 of 100 surfaces coating, the MEMS wafer 100 is bonded on glass substrate 104；Then, such as Fig. 1 C institutes
Show, carries out grinding back surface so that the MEMS wafer 100 is thinned；Then, as shown in figure iD, photoetching is executed using backside alignment techniques
Then technique is etched using the photoresist layer as mask using deep reaction ion etching technique with forming patterned photoresist layer
The back side of the MEMS wafer 100 is open with being formed in the MEMS wafer, and etches the described of the removal opening exposing
Silicon dioxide layer 101；Then, MEMS wafer 100 is separated from glass substrate 104, continues rear road scribing and envelope
Dress technique.
Film layer preparation process, Twi-lithography processing step be (wherein in the manufacturing process of above-mentioned MEMS device, including twice
Once apply backside alignment techniques), film layer etch step (wherein once use deep reaction ion etching technique) and one three times
Bonding process steps are conciliate in secondary interim bonding.It is the complex manufacturing technology of MEMS device, with high costs.
Therefore, it is necessary to propose a kind of production method of new MEMS device, to solve the above problems, simplify MEMS device
Manufacture craft, reduce production cost.
In view of the deficiencies of the prior art, the present invention provides a kind of production method of semiconductor devices, including：
MEMS wafer is provided；
Filter layer is formed in the front of the MEMS wafer；
Several filter openings are formed in the filter layer；
The MEMS wafer is etched by the filter opening, it is recessed to be formed in the MEMS wafer below the filter opening
Slot；
MEMS wafer described in thinning back side, to expose the filter opening.
Wherein, the filter layer includes polyimide layer；The method that several filter openings are formed in the filter layer includes：It is right
The polyimide layer is patterned to form the filter opening；Further include at solidification after patterning the polyimide layer
The step of managing the polyimide layer；Further include in the MEMS before the front of the MEMS wafer forms the filter layer
The step of front of wafer forms support construction；The support construction includes several master consoles arranged in a crossed manner and auxiliary overarm；Institute
It states master console and auxiliary overarm intersection surrounds several polygonal regions；The polygonal region includes quadrangle, pentagon or six sides
Shape；The material of the support construction includes polyimides；The method for etching the MEMS wafer includes wet etching；Thinning back side
Further include the steps that scribing is carried out to the MEMS wafer after the MEMS wafer；The MEMS wafer further includes pre-formed cutting
The region in road further includes the institute for the overlying regions for removing pre-formed Cutting Road while forming the filter opening in the filter layer
The step of stating filter layer further includes the region for etching the pre-formed Cutting Road when forming the groove, in the MEMS
The step of Cutting Road is formed in wafer；Further include by adhesive layer before MEMS wafer described in thinning back side by the MEMS wafer
Front is bonded to the step on carrier；MEMS wafer described in thinning back side further includes later by the MEMS to expose the filter opening
The step of wafer is separated from the carrier；The carrier includes glass substrate.
According to the production method of MEMS device provided by the invention, filter layer is formed in the front of MEMS wafer first, and
Several filter openings are formed in the filter layer, and the MEMS wafer is then etched in the MEMS wafer by the filter opening
Groove is formed, MEMS wafer described in thinning back side is to expose the filter opening of the filter layer later.The method can effectively simplify
The manufacture craft of MEMS device reduces production cost.
[embodiment one]
Implement successively below with reference to the method that Fig. 2A-Fig. 2 E, wherein Fig. 2A -2D are according to an exemplary embodiment of the present one
The step of the schematic cross sectional view of device that obtains respectively.Fig. 2 E are that according to an exemplary embodiment of the present one method is obtained
The schematic plan of the device obtained.
The present invention provides a kind of preparation method of MEMS device, as shown in fig. 6, the key step of the preparation method includes：
Step S601：MEMS wafer is provided；
Step S602：Filter layer is formed in the front of the MEMS wafer；
Step S603：Several filter openings are formed in the filter layer；
Step S604：The MEMS wafer is etched by the filter opening, with the MEMS wafer below the filter opening
Middle formation groove；
Step S605：MEMS wafer described in thinning back side, to expose the filter opening.
In the following, being described in detail to the specific implementation mode of the production method of the MEMS device of the present invention.
First, it executes step S601 and provides MEMS wafer 200 as shown in Figure 2 A.
Illustratively, the MEMS wafer 200 can be following at least one of the material being previously mentioned：Monocrystalline silicon, absolutely
Silicon (SOI) on edge body, stacking silicon (SSOI) on insulator, stacking SiGe (S-SiGeOI), germanium on insulator on insulator
Silicon (SiGeOI) and germanium on insulator (GeOI) etc..
Then, step S602 is executed, as shown in Figure 2 A, filter layer 202 is formed in the front of the MEMS wafer 200.Institute
It includes polyimide layer to state filter layer 202.
Illustratively, polyimide layer can be used dynamic rotary coating method and be coated on wafer, and be dried after carrying out gluing
It is roasting, to improve the adhesion strength of polyimide layer and wafer.Film thickness after the polyimide material spin coating, baking is more than 10
μm, baking temperature is 50~800 DEG C, and baking time is 30s~6h.
It should be noted that polyimides is exemplary materials of the present invention convenient for explanation, the present invention can also use solid
Change with higher chemical stability and mechanical stability, with the organic material of some strength, such as PBO (polyparaphenylene's benzos
Er oxazoles), WPR etc..
Then, it executes step S603 and forms several filter openings 2020 in the filter layer 202 as shown in Figure 2 B.
Illustratively, the polyimide layer is patterned first.Polyimide layer is via photomask, using with predetermined agent
The light source of amount is exposed, and is patterned with being realized in polyimide layer.Light source can select ultraviolet light, deep ultraviolet light, extreme
Ultraviolet light or electron beam, the dosage of light source are more than the critical energy value that polyimide layer can be made to be imaged.The polyamides that exposure-processed is crossed
Photochemical reaction occurs for imines, and property changed, and when development will occur to chemically react and remove with developer solution, and polyamides is sub-
During development treatment, region, shape are not exposed using what organic solvent dissolved photoresist as photoresist is born for amine
At several filter openings 2020.Next, polyimide layer described in curing process.Curing process can effectively improve polyimides
Surface compact degree avoids or reduces the generation of defect, to improve the corrosion resistance of polyimides.It, will as an example
Polyimide layer carries out the processing that is heating and curing, and the temperature being heating and curing is generally 80 DEG C~180 DEG C, preferably 90 DEG C~170
DEG C, but the temperature being heating and curing is not limited to 80 DEG C~180 DEG C.The time being heating and curing can be 15 seconds~300
Second, preferably 30 seconds~150 seconds.The filter structure with several filter openings is formed after curing process.
Compared with prior art, according in the production method of MEMS device provided by the invention, with reference to Fig. 2 B, using polyamides
Imines forms filter layer 202, avoids dry etch step in the prior art and follow-up the step of removing photoresist mask layer,
The manufacture craft for simplifying MEMS device, reduces production cost.
Then, execute step S604 the MEMS wafer 200 is etched by the filter opening 2020 as shown in Figure 2 C, with
Groove is formed in the MEMS wafer below the filter opening.
Illustratively, the method for etching the MEMS wafer includes wet etching.As an example, the wet etching
Corrosive liquid be nitric acid and hydrofluoric acid mixed solvent, depending on desired size of the etch period according to the groove, generally
100s-300s.Hanging filter structure is formed after above-mentioned etching.
Then, step S605, as shown in Figure 2 D, MEMS wafer 200 described in thinning back side, to expose the filter opening are executed
2020。
Illustratively, the MEMS wafer 200 is carried out back thinning, to remove certain thickness backing material, is reached
Thinned wafer and the purpose for exposing filter opening 2020, to form the filter structure of MEMS wafer support.Described be thinned includes to institute
It states semiconductor crystal wafer 200 and carries out grinding back surface and/or etching.Specifically, method commonly used in the art can be used in grinding back surface, such as
Chemical mechanical grinding (CMP) etc..
Compared with prior art, using the production method of MEMS device provided by the invention, bonding and solution bonding are eliminated
The Overall Steps of process, while avoiding many multiple using backside alignment techniques execution photoetching process, deep reaction ion etching etc.
Miscellaneous step simplifies the manufacture craft of MEMS device, reduces production cost.
Next, further including the steps that carrying out scribing to the MEMS wafer 200.
Illustratively, scribing is carried out to the MEMS wafer 200 using machine cuts method, to realize that chip detaches.At this
In embodiment, with reference to Fig. 2 E, the MEMS wafer is cut along Cutting Road I-I ' using high-speed rotating dicing blade.Later to institute
The chip for stating separation carries out the encapsulation in later stage.
[embodiment two]
Implement successively below with reference to the method that Fig. 3 A- Fig. 3 E, wherein Fig. 3 A-3D are according to an exemplary embodiment of the present two
The step of the schematic cross sectional view of device that obtains respectively.Fig. 3 E are that according to an exemplary embodiment of the present two method is obtained
The schematic plan of the device obtained.
First, it executes step S601 and provides MEMS wafer 300 as shown in Figure 3A.
Illustratively, the MEMS wafer 300 can be following at least one of the material being previously mentioned：Monocrystalline silicon, absolutely
Silicon (SOI) on edge body, stacking silicon (SSOI) on insulator, stacking SiGe (S-SiGeOI), germanium on insulator on insulator
Silicon (SiGeOI) and germanium on insulator (GeOI) etc..
With the increase of strainer size, breakage, reliability drop easily occur for the filter structure made according to one method of embodiment
It is low, in order to further expand the application scenarios of strainer, improve the reliability of filter structure, such as the anti-air-flow of enhancing strainer, liquid stream
The ability of impact further includes the steps that forming support construction in the front of the MEMS wafer before forming the filter layer.
With reference to Fig. 3 A, support construction 301 is formed in the front of the MEMS wafer 300.Illustratively, the support construction
301 material includes polyimides.With reference to Fig. 3 E, the support construction includes master console 301a and auxiliary overarm 301b.The master
Overarm 301a and auxiliary overarm 301b constitutes the layout minimum unit of the support construction, and the layout minimum unit can be four sides
Shape, pentagon, hexagon etc..
The process for forming the support construction 301 is as follows：First, the polyimide layer is formed.Illustratively, polyamides is sub-
Amine layer can be used dynamic rotary coating method and be coated on base material, and be toasted after carrying out gluing, to improve polyimide layer and crystalline substance
Round adhesion strength.Film thickness after the polyimide material spin coating, baking is more than 10 μm, and baking temperature is 50~800 DEG C,
Baking time is 30s~6h.Next, patterning the polyimide layer.Illustratively, polyimide layer is via photomask,
It is exposed using the light source with predetermined close, is patterned with being realized in polyimide layer.Light source can select ultraviolet light,
Deep ultraviolet light, extreme ultraviolet light or electron beam, the dosage of light source are more than the critical energy value that polyimide layer can be made to be imaged.Exposure
Photochemical reaction occurs for processed polyimides, and property is changed, and when development will chemically react with developer solution
And remove, polyimides dissolves photoresist not during development treatment as photoresist is born using organic solvent
It is exposed region, the part left is the master console 301a and auxiliary overarm 301b of support construction 301.Next, curing process
The polyimide layer.Curing process can effectively improve the surface compact degree of polyimides, avoid or reduce the production of defect
It is raw, to improve the corrosion resistance of polyimides.As an example, polyimide layer is subjected to the processing that is heating and curing, institute
It states the temperature being heating and curing and is generally 80 DEG C~180 DEG C, preferably 90 DEG C~170 DEG C, but the temperature being heating and curing and unlimited
In 80 DEG C~180 DEG C.The time being heating and curing can be 15 seconds~300 seconds, preferably 30 seconds~150 seconds.Optionally, to institute
The curing process step can wouldn't be executed by stating support construction 301, but in subsequent step, the curing process with filter layer
Step, which merges, to be executed.
Then, step S602 is executed, as shown in Figure 3B, filter layer 302 is formed in the front of the MEMS wafer 300.Institute
It includes polyimide layer to state filter layer 302.
Illustratively, polyimide layer can be used dynamic rotary coating method and be coated on base material, and be dried after carrying out gluing
It is roasting, to improve the adhesion strength of polyimide layer and wafer.Film thickness after the polyimide material spin coating, baking is more than 10
μm, baking temperature is 50~800 DEG C, and baking time is 30s~6h.
It should be noted that polyimides is exemplary materials of the present invention convenient for explanation, the present invention can also use solid
Change with higher chemical stability and mechanical stability, with the organic material of some strength, such as PBO (polyparaphenylene's benzos
Er oxazoles), WPR etc..
Then, it executes step S603 and forms several filter openings 3020 in the filter layer 302 as shown in Figure 3B.
Illustratively, the polyimide layer is patterned first.Polyimide layer is via photomask, using with predetermined agent
The light source of amount is exposed, and is patterned with being realized in polyimide layer.Light source can select ultraviolet light, deep ultraviolet light, extreme
Ultraviolet light or electron beam, the dosage of light source are more than the critical energy value that polyimide layer can be made to be imaged.The polyamides that exposure-processed is crossed
Photochemical reaction occurs for imines, and property changed, and when development will occur to chemically react and remove with developer solution, and polyamides is sub-
During development treatment, region, shape are not exposed using what organic solvent dissolved photoresist as photoresist is born for amine
At several filter openings 3020.Next, polyimide layer described in curing process.Curing process can effectively improve polyimides
Surface compact degree avoids or reduces the generation of defect, to improve the corrosion resistance of polyimides.It, will as an example
Polyimide layer carries out the processing that is heating and curing, and the temperature being heating and curing is generally 80 DEG C~180 DEG C, preferably 90 DEG C~170
DEG C, but the temperature being heating and curing is not limited to 80 DEG C~180 DEG C.The time being heating and curing can be 15 seconds~300
Second, preferably 30 seconds~150 seconds.The filter structure with several filter openings is formed after curing process.
Then, execute step S604 the MEMS wafer 300 is etched by the filter opening 3020 as shown in Figure 3 C, with
Groove is formed in the MEMS wafer below the filter opening.
Illustratively, the method for etching the MEMS wafer includes wet etching.As an example, the wet etching
Corrosive liquid be nitric acid and hydrofluoric acid mixed solvent, depending on desired size of the etch period according to the groove, generally
100s-300s.Hanging filter structure is formed after above-mentioned etching.
Then, step S605, as shown in Figure 3D, MEMS wafer 300 described in thinning back side, to expose the filter opening are executed
3020。
Illustratively, the MEMS wafer 300 is carried out back thinning, to remove certain thickness backing material, is reached
Thinned wafer and the purpose for exposing filter opening 3020, to form the filter structure of MEMS wafer support.Described be thinned includes to institute
It states semiconductor crystal wafer 300 and carries out grinding back surface and/or etching.Specifically, method commonly used in the art can be used in grinding back surface, such as
Chemical mechanical grinding (CMP) etc..
Next, further including the steps that carrying out scribing to the MEMS wafer 300.
Illustratively, scribing is carried out to the MEMS wafer 300 using machine cuts method, to realize that chip detaches.Reference
Fig. 3 E cut the MEMS wafer using high-speed rotating dicing blade along Cutting Road I-I '.Later to the chip of the separation
Carry out the encapsulation in later stage.
[embodiment three]
Implement successively below with reference to the method that Fig. 4 A- Fig. 4 F, wherein Fig. 4 A-4E are according to an exemplary embodiment of the present three
The step of the schematic cross sectional view of device that obtains respectively.Fig. 4 F are that according to an exemplary embodiment of the present three method is obtained
The schematic plan of the device obtained.
First, it executes step S601 and provides MEMS wafer 400 as shown in Figure 4 A.
Illustratively, the MEMS wafer 400 can be following at least one of the material being previously mentioned：Monocrystalline silicon, absolutely
Silicon (SOI) on edge body, stacking silicon (SSOI) on insulator, stacking SiGe (S-SiGeOI), germanium on insulator on insulator
Silicon (SiGeOI) and germanium on insulator (GeOI) etc..
Then, step S602 is executed, as shown in Figure 4 A, filter layer 402 is formed in the front of the MEMS wafer 200.Institute
It includes polyimide layer to state filter layer 402.
Illustratively, polyimide layer can be used dynamic rotary coating method and be coated on wafer, and be dried after carrying out gluing
It is roasting, to improve the adhesion strength of polyimide layer and wafer.Film thickness after the polyimide material spin coating, baking is more than 10
μm, baking temperature is 50~800 DEG C, and baking time is 30s~6h.
It should be noted that polyimides is exemplary materials of the present invention convenient for explanation, the present invention can also use solid
Change with higher chemical stability and mechanical stability, with the organic material of some strength, such as PBO (polyparaphenylene's benzos
Er oxazoles), WPR etc..
Then, it executes step S603 and forms several filter openings 4020 in the filter layer 202 as shown in Figure 4 B.
Illustratively, the polyimide layer is patterned first.Polyimide layer is via photomask, using with predetermined agent
The light source of amount is exposed, and is patterned with being realized in polyimide layer.Light source can select ultraviolet light, deep ultraviolet light, extreme
Ultraviolet light or electron beam, the dosage of light source are more than the critical energy value that polyimide layer can be made to be imaged.The polyamides that exposure-processed is crossed
Photochemical reaction occurs for imines, and property changed, and when development will occur to chemically react and remove with developer solution, and polyamides is sub-
During development treatment, region, shape are not exposed using what organic solvent dissolved photoresist as photoresist is born for amine
At several filter openings 4020, while the filter layer of the overlying regions of the pre-formed Cutting Road of MEMS wafer is removed, defines Cutting Road
4021 shape.Next, polyimide layer described in curing process.Curing process can effectively improve the surface of polyimides
Consistency avoids or reduces the generation of defect, to improve the corrosion resistance of polyimides.As an example, by polyamides
Imine layer carries out the processing that is heating and curing, and the temperature being heating and curing is generally 80 DEG C~180 DEG C, preferably 90 DEG C~170 DEG C, but
The temperature being heating and curing is not limited to 80 DEG C~180 DEG C.The time being heating and curing can be 15 seconds~300 seconds, excellent
It selects 30 seconds~150 seconds.The filter structure with several filter openings is formed after curing process.
Then, execute step S604 the MEMS wafer 400 is etched by the filter opening 4020 as shown in Figure 4 C, with
Groove is formed in the MEMS wafer below the filter opening.Illustratively, the same of the groove is formed in etching MEMS wafer
When in the MEMS wafer formed Cutting Road 4021.
Illustratively, the method for etching the MEMS wafer includes wet etching.As an example, the wet etching
Corrosive liquid be nitric acid and hydrofluoric acid mixed solvent, depending on desired size of the etch period according to the groove, generally
100s-300s.Hanging filter structure is formed after above-mentioned etching.
Next, as shown in Figure 4 D, the front of the MEMS wafer 400 is bonded on carrier 404.Illustratively, first
Adhesive layer 403 is first formed on the filter layer 402, and then the MEMS wafer 400 is adhered on carrier 404.It is described viscous
It includes dryness jointing material to tie layer 403.The carrier 404 includes glass substrate.
Then, step S605, as shown in Fig. 4 E and 4F, MEMS wafer 400 described in thinning back side, to expose the filter are executed
Hole 4020.Illustratively, shape exposes Cutting Road 4021 while exposing filter opening 4020, the chip detached.
Illustratively, the MEMS wafer 400 is carried out back thinning, to remove certain thickness backing material, is reached
Thinned wafer and the purpose for exposing filter opening 4020 to form the filter structure of MEMS wafer support, and are exposing the filter
Cutting Road 4021 is formd while hole 4020, realizes the segmentation of wafer.Described be thinned includes to the semiconductor crystal wafer 400
Carry out grinding back surface and/or etching.Specifically, method commonly used in the art, such as chemical mechanical grinding can be used in grinding back surface
(CMP) etc..
Compared with prior art, using the production method of MEMS device provided by the invention, follow-up scribing processes are eliminated
Overall Steps, while avoiding that execute photoetching process, deep reaction ion etching etc. using backside alignment techniques many complicated
Step simplifies the manufacture craft of MEMS device, reduces production cost.
Next, further including solution bonding steps for separating the MEMS wafer from the carrier and to described point
From chip carry out the later stage encapsulation the step of.
[example IV]
Implement successively below with reference to the method that Fig. 5 A- Fig. 5 F, wherein Fig. 5 A-5E are according to an exemplary embodiment of the present four
The step of the schematic cross sectional view of device that obtains respectively.Fig. 5 F are that according to an exemplary embodiment of the present four method is obtained
The schematic plan of the device obtained.
First, it executes step S601 and provides MEMS wafer 500 as shown in Figure 5A.
Illustratively, the MEMS wafer 500 can be following at least one of the material being previously mentioned：Monocrystalline silicon, absolutely
Silicon (SOI) on edge body, stacking silicon (SSOI) on insulator, stacking SiGe (S-SiGeOI), germanium on insulator on insulator
Silicon (SiGeOI) and germanium on insulator (GeOI) etc..
With the increase of strainer size, breakage, reliability drop easily occur for the filter structure made according to one method of embodiment
It is low, in order to further expand the application scenarios of strainer, improve the reliability of filter structure, such as the anti-air-flow of enhancing strainer, liquid stream
The ability of impact further includes the steps that forming support construction in the front of the MEMS wafer before forming the filter layer.
With reference to Fig. 5 A, support construction 501 is formed in the front of the MEMS wafer 500.Illustratively, the support construction
501 material includes polyimides.With reference to Fig. 5 F, the support construction includes master console 501a and auxiliary overarm 501b.The master
Overarm 501a and auxiliary overarm 501b constitutes the layout minimum unit of the support construction, and the layout minimum unit can be four sides
Shape, pentagon, hexagon etc..
The process for forming the support construction 501 is as follows：First, the polyimide layer is formed.Illustratively, polyamides is sub-
Amine layer can be used dynamic rotary coating method and be coated on base material, and be toasted after carrying out gluing, to improve polyimide layer and crystalline substance
Round adhesion strength.Film thickness after the polyimide material spin coating, baking is more than 10 μm, and baking temperature is 50~800 DEG C,
Baking time is 30s~6h.Next, patterning the polyimide layer.Illustratively, polyimide layer is via photomask,
It is exposed using the light source with predetermined close, is patterned with being realized in polyimide layer.Light source can select ultraviolet light,
Deep ultraviolet light, extreme ultraviolet light or electron beam, the dosage of light source are more than the critical energy value that polyimide layer can be made to be imaged.Exposure
Photochemical reaction occurs for processed polyimides, and property is changed, and when development will chemically react with developer solution
And remove, polyimides dissolves photoresist not during development treatment as photoresist is born using organic solvent
It is exposed region, the part left is the master console 501a and auxiliary overarm 501b of support construction 501.Next, curing process
The polyimide layer.Curing process can effectively improve the surface compact degree of polyimides, avoid or reduce the production of defect
It is raw, to improve the corrosion resistance of polyimides.As an example, polyimide layer is subjected to the processing that is heating and curing, institute
It states the temperature being heating and curing and is generally 80 DEG C~180 DEG C, preferably 90 DEG C~170 DEG C, but the temperature being heating and curing and unlimited
In 80 DEG C~180 DEG C.The time being heating and curing can be 15 seconds~300 seconds, preferably 30 seconds~150 seconds.At solidification
The filter structure with several filter openings is formed after reason.Optionally, the support construction 501 can wouldn't be executed at the solidification
Step is managed, but in subsequent step, merge execution with the curing process step of filter layer.
Then, step S602 is executed, as shown in Figure 5 B, filter layer 502 is formed in the front of the MEMS wafer 500.Institute
It includes polyimide layer to state filter layer 502.
Illustratively, polyimide layer can be used dynamic rotary coating method and be coated on base material, and be dried after carrying out gluing
It is roasting, to improve the adhesion strength of polyimide layer and wafer.Film thickness after the polyimide material spin coating, baking is more than 10
μm, baking temperature is 50~800 DEG C, and baking time is 30s~6h.
It should be noted that polyimides is exemplary materials of the present invention convenient for explanation, the present invention can also use solid
Change with higher chemical stability and mechanical stability, with the organic material of some strength, such as PBO (polyparaphenylene's benzos
Er oxazoles), WPR etc..
Then, it executes step S603 and forms several filter openings 5020 in the filter layer 502 as shown in Figure 5 B.
Illustratively, the polyimide layer is patterned first.Polyimide layer is via photomask, using with predetermined agent
The light source of amount is exposed, and is patterned with being realized in polyimide layer.Light source can select ultraviolet light, deep ultraviolet light, extreme
Ultraviolet light or electron beam, the dosage of light source are more than the critical energy value that polyimide layer can be made to be imaged.The polyamides that exposure-processed is crossed
Photochemical reaction occurs for imines, and property changed, and when development will occur to chemically react and remove with developer solution, and polyamides is sub-
During development treatment, region, shape are not exposed using what organic solvent dissolved photoresist as photoresist is born for amine
At several filter openings 5020, while the filter layer of the overlying regions of the pre-formed Cutting Road of MEMS wafer is removed, defines Cutting Road
5021 shape.Next, polyimide layer described in curing process.Curing process can effectively improve the surface of polyimides
Consistency avoids or reduces the generation of defect, to improve the corrosion resistance of polyimides.As an example, by polyamides
Imine layer carries out the processing that is heating and curing, and the temperature being heating and curing is generally 80 DEG C~180 DEG C, preferably 90 DEG C~170 DEG C, but
The temperature being heating and curing is not limited to 80 DEG C~180 DEG C.The time being heating and curing can be 15 seconds~300 seconds, excellent
It selects 30 seconds~150 seconds.
Then, execute step S604 the MEMS wafer 500 is etched by the filter opening 5020 as shown in Figure 5 C, with
Groove is formed in the MEMS wafer below the filter opening.Illustratively, the same of the groove is formed in etching MEMS wafer
When in the MEMS wafer formed Cutting Road 5021.
Illustratively, the method for etching the MEMS wafer includes wet etching.As an example, the wet etching
Corrosive liquid be nitric acid and hydrofluoric acid mixed solvent, depending on desired size of the etch period according to the groove, generally
100s-300s.Hanging filter structure is formed after above-mentioned etching.
Next, as shown in Figure 5 D, the front of the MEMS wafer 500 is bonded on carrier 504.Illustratively, first
Adhesive layer 503 is first formed on the filter layer 502, and then the MEMS wafer 500 is adhered on carrier 504.It is described viscous
It includes dryness jointing material to tie layer 503.The carrier 504 includes glass substrate.
Then, step S605, as shown in Fig. 5 E and 5F, MEMS wafer 500 described in thinning back side, to expose the filter are executed
Hole 5020.Illustratively, Cutting Road 5021 is exposed while exposing filter opening 5020, the chip detached.
Illustratively, the MEMS wafer 500 is carried out back thinning, to remove certain thickness backing material, is reached
Thinned wafer and the purpose for exposing filter opening 5020 to form the filter structure of MEMS wafer support, and are exposing the filter
Cutting Road 5021 is exposed while hole 5020, the chip detached.Described be thinned includes to the semiconductor crystal wafer 500
Carry out grinding back surface and/or etching.Specifically, method commonly used in the art, such as chemical mechanical grinding can be used in grinding back surface
(CMP) etc..
Next, further including solution bonding steps for separating the MEMS wafer from the carrier and to described point
From chip carry out the later stage encapsulation the step of.
[embodiment five]
With reference to Fig. 5 E and Fig. 5 F, the structure of MEMS device provided in an embodiment of the present invention is described.The MEMS
Device includes MEMS wafer 500 and the filter layer 502 that is formed in the front of the MEMS wafer 500, shape in the filter layer 502
At there are several filter openings 5020, it is formed in the MEMS wafer 500 of 5020 lower section of the filter opening and exposes the filter opening 5020
Groove slot.
MEMS wafer 500 is provided.Illustratively, the MEMS wafer 500 can be in the following material being previously mentioned extremely
Few one kind：Monocrystalline silicon, silicon-on-insulator (SOI), stacking silicon (SSOI) on insulator, stacking SiGe (S- on insulator
SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc..
The front of the MEMS wafer 500 is formed with filter layer 502；The filter layer 502 is formed with several filter openings 5020.
Illustratively, the filter layer 502 includes polyimide layer.Illustratively, in the MEMS wafer 500 and the filter layer
Support construction 501 can also be formed between 502.The support construction includes master console 501a and auxiliary overarm 501b.
It is formed with the slot for exposing the filter opening 5020 in the MEMS wafer 500 of 5020 lower section of the filter opening.
According to the production method of MEMS device provided by the invention, filter layer is formed in the front of MEMS wafer first, and
Several filter openings are formed in the filter layer, and the MEMS wafer is then etched in the MEMS wafer by the filter opening
Groove is formed, MEMS wafer described in thinning back side is to expose the filter opening of the filter layer later.The method can effectively simplify
The manufacture craft of MEMS device reduces production cost.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (22)
1. a kind of production method of MEMS device, which is characterized in that include the following steps：
MEMS wafer is provided；
Filter layer is formed in the front of the MEMS wafer；
Several filter openings are formed in the filter layer；
The MEMS wafer is etched by the filter opening, to form groove in the MEMS wafer below the filter opening；
MEMS wafer described in thinning back side, to expose the filter opening.
2. the method as described in claim 1, which is characterized in that the filter layer includes polyimide layer.
3. method as claimed in claim 2, which is characterized in that the method for forming several filter openings in the filter layer includes：
The filter opening is patterned to form to the polyimide layer.
4. method as claimed in claim 3, which is characterized in that after patterning the polyimide layer further include at solidification
The step of managing the polyimide layer.
5. the method as described in claim 1, which is characterized in that before the front of the MEMS wafer forms the filter layer
Further include the steps that forming support construction in the front of the MEMS wafer.
6. method as claimed in claim 5, which is characterized in that the support construction include several master consoles arranged in a crossed manner and
Auxiliary overarm.
7. method as claimed in claim 6, which is characterized in that the master console and auxiliary overarm intersection surround several polygon areas
Domain.
8. the method for claim 7, which is characterized in that the polygonal region includes quadrangle, pentagon or six sides
Shape.
9. method as claimed in claim 5, which is characterized in that the material of the support construction includes polyimides.
10. the method as described in claim 1, which is characterized in that the method for etching the MEMS wafer includes wet etching.
11. the method as described in claim 1, which is characterized in that further include to described after MEMS wafer described in thinning back side
MEMS wafer carries out the step of scribing.
12. the method as described in claim 1, which is characterized in that the MEMS wafer further includes the region of pre-formed Cutting Road,
It further include the filter layer for the overlying regions for removing pre-formed Cutting Road while forming the filter opening in the filter layer
The step of, further include the region for etching the pre-formed Cutting Road when forming the groove, with the shape in the MEMS wafer
The step of at Cutting Road.
13. method as claimed in claim 12, which is characterized in that further including before MEMS wafer described in thinning back side will be described
The front of MEMS wafer is bonded to the step on carrier；MEMS wafer described in thinning back side further includes after the filter opening to expose
The step of MEMS wafer is separated from the carrier.
14. method as claimed in claim 13, which is characterized in that the carrier includes glass substrate.
15. a kind of MEMS device, which is characterized in that including：
Bottom MEMS wafer；
The front of the MEMS wafer is formed with filter layer；
Several filter openings are formed in the filter layer；
The back side of the MEMS wafer forms fluted, the groove exposing filter opening.
16. device as claimed in claim 15, which is characterized in that the filter layer includes polyimide layer.
17. device as claimed in claim 15, which is characterized in that also formed between the MEMS wafer and the filter layer
There is support construction.
18. method as claimed in claim 17, which is characterized in that the support construction includes several master consoles arranged in a crossed manner
With auxiliary overarm.
19. device as claimed in claim 18, which is characterized in that the master console and auxiliary overarm intersection surround several polygons
Region.
20. device as claimed in claim 19, which is characterized in that the polygonal region includes quadrangle, pentagon or six
Side shape.
21. device as claimed in claim 17, which is characterized in that the material of the support construction includes polyimides.
22. device as claimed in claim 15, which is characterized in that further include Cutting Road in the MEMS wafer.
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