CN108525699B - Ultra-thin 2D WO3/g-C3N4Z-type heterojunction photocatalyst and preparation method thereof - Google Patents
Ultra-thin 2D WO3/g-C3N4Z-type heterojunction photocatalyst and preparation method thereof Download PDFInfo
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- 239000011941 photocatalyst Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000002135 nanosheet Substances 0.000 claims abstract description 57
- 239000000243 solution Substances 0.000 claims description 18
- 239000002244 precipitate Substances 0.000 claims description 14
- 239000002064 nanoplatelet Substances 0.000 claims description 11
- 238000001354 calcination Methods 0.000 claims description 10
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 108091003079 Bovine Serum Albumin Proteins 0.000 claims description 7
- 229940098773 bovine serum albumin Drugs 0.000 claims description 7
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- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 230000001699 photocatalysis Effects 0.000 abstract description 20
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
-
- B01J35/39—
-
- B01J35/40—
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
- C01B3/04—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
- C01B3/042—Decomposition of water
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1005—Arrangement or shape of catalyst
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2203/00—Integrated processes for the production of hydrogen or synthesis gas
- C01B2203/10—Catalysts for performing the hydrogen forming reactions
- C01B2203/1041—Composition of the catalyst
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Abstract
The invention provides an ultrathin 2D WO3/g‑C3N4The preparation method of the Z-type heterojunction photocatalyst comprises the following steps: s1 preparation of ultrathin 2D WO3Nanosheets; s2, preparation of ultrathin 2D g-C3N4Nanosheets; and S3 by 2D WO3Nanosheets and 2D g-C3N4Ultrathin 2D WO prepared by nanosheet3/g‑C3N4A Z-type heterojunction photocatalyst. The invention also provides an ultrathin 2D WO3/g‑C3N4Z-type heterojunction photocatalyst comprising 2D WO3And 2D g-C3N4Wherein 2D WO3And 2D g-C3N4The mass ratio of (A) to (B) is 1-3: 10. 2D WO provided by the invention3/g‑C3N4The Z-shaped energy band structure of the heterojunction photocatalyst improves the photocatalytic efficiency, and meanwhile, the 2D/2D heterojunction in face-to-face contact can show a large interface contact area and smaller interface resistance, so that the charge transfer efficiency is improved, and the photocatalytic performance and stability are further improved.
Description
Technical Field
The invention relates to the field of environment-friendly and energy functional materials, in particular to ultrathin 2D WO3/g-C3N4A Z-type heterojunction photocatalyst and a preparation method thereof.
Background
Photocatalytic hydrogen production has been considered one of the most promising routes to convert low density solar energy into directly available chemical energy. However, a single semiconductor photocatalyst has difficulty achieving high photocatalytic activity due to the high recombination probability of photo-generated charge carriers. Constructing a suitable heterojunction system is one of the effective ways to solve this problem. In general, the design of high efficiency heterojunction photocatalysts has focused mainly on two key points. One is a suitable band-interleaved arrangement of the two semiconductor photocatalysts, and the other is an ideal interface between the two semiconductors for efficient charge transfer/separation.
Since Wang et al first reported g-C3N4Used for producing hydrogen g-C by photocatalytic water decomposition3N4Photocatalysts have been extensively studied for their narrow band gap, visible light response, relatively negative conduction band position, simple and feasible synthetic methods, and special two-dimensional (2D) layered structures. However, pure g-C3N4The photocatalytic performance of the catalyst has not yet reached the actual requirement. A series of sums g-C3N4Semiconductors with band interleaved structures are used to combine g-C3N4Composite construction of g-C3N4A base heterostructure photocatalyst. Such as TiO2/g-C3N4,ZnO/g-C3N4,WO3/g-C3N4,CdS/g-C3N4,ZnIn2S4/g-C3N4,BiOI/g-C3N4. At the interface of these type II heterojunctions, the photogenerated electrons will be transferred from the more negative valence band (CB) to the more positive CB, while the photogenerated holes will be transferred from the more negative Valence Band (VB) to the more negative VB. In this g-C3N4In group II heterojunctions, this typical charge transfer mode greatly reduces the redox capacity of electrons and holes, which then thermodynamically reduces the photocatalytic activity. In recent years, a direct Z-type charge transfer mechanism has been used to explain photogenerated charge separation between heterojunctions. In short, recombination occurs at the heterojunction interface between electrons from more positive conduction band positions and holes from more negative conduction band positions of the two semiconductors, respectively. Thus, the remaining photogenerated electrons in the more negative CB and the remaining photogenerated holes in the more positive VB are preserved whileTherefore, the photocatalyst has the optimal reduction and oxidation capacity, and participates in the photocatalytic oxidation reduction reaction to improve the performance of the photocatalyst. As we know, semiconductor photocatalysts with more negative CB positions can be considered to be good reduced photocatalysts, while semiconductor photocatalysts with more positive VB positions can be considered to be good oxidized photocatalysts. The reduction type photocatalyst and the oxidation type photocatalyst are compounded into the Z type heterojunction, so that the high reduction and oxidation capacities of the reduction type photocatalyst and the oxidation type photocatalyst can be fully utilized, and the photocatalytic performance is greatly improved. As described above, g-C3N4Is a typical reduced photocatalyst, and is suitable for being combined with g-C3N4Staggered band arrangement of oxidized semiconductor photocatalysts to design based on g-C3N4The direct Z-type heterojunction photocatalyst of (a) is still of great significance.
WO3It has been considered to be a promising oxygen-producing semiconductor due to its appropriate bandgap (about 2.6eV) (visible light responsive photocatalyst) and sufficiently positive VB position (high oxidation power). WO3One is a typical oxidized semiconductor photocatalyst.
Disclosure of Invention
The invention provides an ultrathin 2D WO for improving the efficiency of photocatalytic hydrogen production3/g-C3N4The preparation method of the Z-type heterojunction photocatalyst comprises the following steps:
s1 preparation of ultrathin 2D WO3Nanosheets;
s2, preparation of ultrathin 2D g-C3N4Nanosheets; and
s3, by 2D WO3Nanosheets and 2D g-C3N4Ultrathin 2D WO prepared by nanosheet3/g-C3N4A Z-type heterojunction photocatalyst.
Ultra-thin 2D WO described in the present invention3/g-C3N4In the method for preparing the Z-type heterojunction photocatalyst, the step S1 includes the steps of:
step S11, preparation of bulk phase WO3(ii) a And
step S12, preparing ultrathin 2D WO3Nanosheets.
Ultra-thin 2D WO described in the present invention3/g-C3N4In the method for preparing the Z-type heterojunction photocatalyst, the step S11 includes the steps of:
s111, adding Na2WO4·2H2O dispersed in HNO3Stirring thoroughly in the solution, then centrifuging to collect the precipitate, and washing the precipitate with water to pH 7;
s112, drying the obtained precipitate in an oven for 12 hours, and then calcining the dried precipitate at 500 ℃ for 3 hours to obtain a bulk phase WO3。
Ultra-thin 2D WO described in the present invention3/g-C3N4In the preparation method of the Z-type heterojunction photocatalyst, the step S12 is specifically to strip a bulk phase WO by ultrasound3。
Ultra-thin 2D WO described in the present invention3/g-C3N4In the preparation method of the Z-type heterojunction photocatalyst, bovine serum albumin is preferably used as an exfoliating agent to assist ultrasonic exfoliation of a bulk phase WO3。
Ultra-thin 2D WO described in the present invention3/g-C3N4In the method for preparing the Z-type heterojunction photocatalyst, the step S2 includes the steps of:
s21, loading urea into a crucible, covering the crucible, calcining at 550 ℃ for 2h at a heating rate of 5 ℃/min to obtain bulk phase-g-C3N4(ii) a And
s22 preparation of bulk-g-C from S213N4Grinding, loading into crucible, calcining at 550 deg.C for 2 hr at a heating rate of 5 deg.C/min to obtain ultrathin 2D g-C3N4Nanosheets.
Ultra-thin 2D WO described in the present invention3/g-C3N4In the method for preparing the Z-type heterojunction photocatalyst, the step S3 includes the steps of:
ultra-thin 2D g-C3N4Dispersing the nanoplatelets into a lactic acid solution and then dispersing the 2D WO3Adding the nanosheet into the solution, controlling the pH value of the mixed solution to be 4, continuously stirring for 2h, centrifuging, collecting precipitate, washing and drying.
The invention also provides an ultrathin 2D WO3/g-C3N4Z-type heterojunction photocatalyst comprising 2D WO3And 2D g-C3N4。
The ultrathin 2D WO provided by the invention3/g-C3N4In Z-type heterojunction photocatalyst, 2D WO3And 2D g-C3N4The mass ratio of (A) to (B) is 1-3: 10.
has the advantages that: due to g-C3N4And WO3With the bands arranged alternately in between to make WO3/g-C3N4The heterostructure is very effective for improving photocatalytic performance. The ideal interface between the two components plays a crucial role in charge transfer and separation. Also, the 2D/2D heterojunction in face-to-face contact may exhibit a large interface contact area and a smaller interface resistance, improving charge transfer efficiency, thereby further improving the performance and stability of photocatalysis.
Drawings
FIG. 1 is an ultra-thin 2D/2D WO according to an embodiment of the present invention3/g-C3N4A schematic diagram of a preparation method of the Z-type heterojunction photocatalyst;
FIG. 2 shows a bulk phase WO3,WO3Nanosheets and g-C3N4A Zet (ζ) potential diagram of the nanoplatelets at pH 4;
FIGS. 3a-3b are bulk WO3FESEM image of (g) and fig. 3C is g-C3N4FESEM image of nanoplatelets, FIG. 3d is 15% WO prepared in the second example3/g-C3N4FESEM image of (a);
FIG. 4 is a performance diagram of photocatalytic hydrogen production rate in different examples;
FIG. 5 shows 15% WO prepared in the second example3/g-C3N4The photocatalytic stability of (a);
FIG. 6a shows WO3Nanosheets and g-C3N4The Z-type charge transfer mechanism between them, and FIG. 6b is a charge transfer diagram between 2D/2D heterojunctions.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Although the steps in the present invention are arranged by using reference numbers, the order of the steps is not limited, and the relative order of the steps can be adjusted unless the order of the steps is explicitly stated or other steps are required for the execution of a certain step. It is to be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
As shown in FIG. 1, the present invention provides an ultra-thin 2D/2D WO3/g-C3N4The preparation method of the Z-type heterojunction photocatalyst specifically comprises the following steps:
s1 preparation of ultrathin 2D WO3Nanosheets;
s2, preparation of ultrathin 2D g-C3N4Nanosheets; and
s3, by 2D WO3Nanosheets and 2D g-C3N4Ultrathin 2D/2D WO prepared by nanosheet3/g-C3N4A heterojunction photocatalyst.
Specifically, step S1 further includes:
step S11, preparation of bulk phase WO3(ii) a And
step S12, preparing ultrathin 2D WO3Nanosheets.
Wherein, step S11 specifically includes:
s111, adding Na2WO4·2H2O dispersed in HNO3In solution, stirring well, then centrifuging and collecting yellow precipitate (WO)3·2H2O) and washed with water to pH 7;
in one embodiment of the invention, 500mg of Na is added2WO4·2H2O dispersed in 200mL of 4.8M HNO3The solution was stirred for 36 h.
S112, mixingObtained WO3·2H2Drying O in an oven for 12h, and then calcining at 500 ℃ for 3h to obtain a bulk phase WO3。
Step S12 is embodied by ultrasonic exfoliation of bulk WO3Preparation of ultra-thin 2D WO3Nanosheets;
in one embodiment of the present invention, in step S12, Bovine Serum Albumin (BSA) is used as the exfoliant to assist in ultrasonic exfoliate WO3. Because the BSA surface is rich in-NH under acidic conditions2The radicals may be reacted with WO3Strong electrostatic binding occurs. Under the action of ultrasound, the strong electrostatic force can be released from the WO3By tearing off ultrathin 2D WO on the surface3Nanosheets and greatly enhanced WO3Dispersibility of the nanoplatelets in solution.
In one embodiment of the invention, 10mg BSA is dissolved in 100mL H2In O, 1M HNO is used3The pH of the mixture solution was adjusted to 4. 50mg of bulk WO3The powder was dispersed in the above solution and sonicated for 3 h. The resulting milky white solution was centrifuged at 4500rpm for 30 min. After removal of excess BSA solution, the precipitate was redispersed in 100mL H at pH 42In O, the mixture was again sonicated vigorously for 3 h. Finally, milky ultra-thin 2D WO is obtained3A suspension of nanoplatelets, and the concentration of the suspension is 0.5 mg/mL.
Step S2 specifically includes:
s21, loading urea into a crucible, covering the crucible, calcining at 550 ℃ for 2h at a heating rate of 5 ℃/min to obtain light yellow powder (bulk-g-C)3N4);
The reason for capping the crucible and increasing the temperature at a higher rate is to prevent reduced gas volatilization and to increase the g-C3N4The yield of (2).
And S22, grinding the light yellow powder obtained in S21, loading into a crucible, and calcining at 550 deg.C for 2h at a heating rate of 5 deg.C/min to obtain ultrathin 2D g-C3N4Nanosheets. By secondary calcination and thermal oxidation stripping, ultrathin 2D g-C can be obtained3N4Nanosheets.
Step S3 specifically includes:
ultra-thin 2D g-C3N4Dispersing the nanosheets into a lactic acid solution, and adding WO3And (3) dripping the nanosheet suspension into the solution, continuously stirring for 2h when the pH of the mixed solution is 4, centrifuging, collecting precipitate, washing and drying.
The reason why the pH of the mixed solution was controlled to about 4 was that the peeled ultrathin 2D WO3The nanosheets are negatively surface charged at pH 4. And at pH 4, ultra-thin 2D g-C3N4The surface of (2) is positively charged, so that electrostatic adsorption between the two builds ultrathin 2D/2D WO3/g-C3N4A heterojunction photocatalyst.
Example 1
50mg of ultrathin 2D g-C3N4The nanosheets were dispersed in 80mL of 20 vol% lactic acid solution, and 10mL of WO was added3And (3) dripping the nanosheet suspension into the solution, and controlling the pH of the mixed solution to be close to 4. After stirring for 2h, the precipitate was collected by centrifugation and washed clean with deionized water. The product obtained is designated as 10% WO3/g-C3N4。
Example 2
Example 2 is essentially the same as example 1, except for the difference in WO3The addition of the nanosheet suspension was 15mL, and the resulting product was designated as 15% WO3/g-C3N4。
Example 3
Example 3 is essentially the same as example 1, except for the difference in WO3The addition of the nanosheet suspension was 20mL, and the resulting product was designated as 20% WO3/g-C3N4。
Example 4
Example 4 is essentially the same as example 1, except for the difference in WO3The addition of the nanosheet suspension was 30mL, and the resulting product was designated as 30% WO3/g-C3N4。
Experimental data
As shown in fig. 2, bulk phase WO at pH 43,WO3Nanosheets and g-C3N4Zeta potential (Zeta) diagram of the nanoplatelets. At pH 4, bulk WO3A negative zeta potential of-9.7 mV is shown. WO3The nanoplatelets also exhibit a negative zeta potential of-22.8 mV. At pH 4, higher Zeta potential values indicate WO3Dispersable phase comparison of nanosheets WO3And more preferably. The stripping process brings more surface groups, thereby improving WO3Dispersibility of the nanosheets. At pH 4, g-C3N4The nanoplatelets exhibit a positive zeta potential of 10.3 mV. The opposite zeta potential value can bring WO3Nanosheets and g-C3N4The strong electrostatic attraction between the nano sheets is favorable for charge transfer between the nano sheets. Stable 2D/2D WO3/g-C3N4Heterojunctions can be obtained by electrostatic attraction.
As shown in FIGS. 3a-3d, FIG. 3a shows a bulk phase WO3From the FESEM image of (a), a uniform sheet structure of about 500nm size and 50nm thickness was observed. WO after peeling3The thickness of the nanosheets becomes very thin. As shown in FIG. 3b, a number of thin, tiled WO's can be observed3Nanosheets. In addition, WO3The size of the nanosheets also became comparative WO3Much smaller. This result demonstrates that the ultrasonic exfoliation phase WO is electrostatically assisted by BSA3Can successfully obtain ultrathin WO3Nanosheets. FIG. 3C shows g-C3N4FESEM images of the nanoplatelets, a layered structure with curled edges can be observed. With WO3Comparative nanosheets, g-C3N4The size of the nanoplatelets is larger because of g-C3N4The nanosheet structure of (A) is more flexible, whereas WO3Is a brittle material. FIG. 3d shows 15% WO prepared in the second example3/g-C3N4The FESEM image of (1) shows that all the nanosheets are aggregated together, and g-C is difficult to distinguish3N4And WO3And the nano-sheets show that the material after compounding has high fusion degree and is uniform.
FIG. 4 is a performance diagram of the photocatalytic hydrogen production rate in different examples. 80mL of 20 vol% aqueous lactic acid was used as the sacrificial agent. 2 wt% of Pt is loaded on the sample by adopting a photoreduction deposition methodThe product surface is used as a hydrogen production promoter. A full spectrum 350W xenon lamp was used as the light source. WO can be seen in FIG. 43The nanosheets had no significant hydrogen production activity due to WO3Is not properly located. Pure g-C3N4Shows 583. mu. mol h-1g-1Hydrogen production activity of (1). Following WO3/g-C3N4WO of Zhong3The hydrogen production rate is gradually improved by increasing the content of the nano sheets. When WO is3When the proportion of the nano-sheets reaches 15%, the hydrogen production rate reaches the highest (982 mu mol h)-1g-1). Notably, 20% WO3/g-C3N4And 30% of WO3/g-C3N4Shows a ratio of 15% WO3/g-C3N4Lower hydrogen production rate. This result indicates WO3/g-C3N4Presence of WO in composite materials3The optimal proportion of the nano-sheets. Too high of WO3The nanosheet content being such that WO3/g-C3N4The oxidation capability of the composite material is enhanced, and the g-C of the reductive photocatalyst is reduced3N4In such an amount that WO3/g-C3N4The reducing power of the composite material is reduced.
FIG. 5 shows 15% WO prepared in the second example3/g-C3N4The photocatalytic stability of (c). Overall, 15% WO3/g-C3N4There was no significant decrease in photocatalytic activity after 4 cycles, indicating 15% WO3/g-C3N4Has high photocatalytic stability under irradiation.
FIG. 6a shows WO3Nanosheets and g-C3N4Schematic diagram of Z-type charge transfer mechanism in between. With the help of an electric field built in the interface, the photon-generated carriers can be better separated and transferred in space. WO3Can transfer photo-generated electrons in the Conductive (CB) to g-C3N4And its photo-generated holes (VB). As a result, higher reducing ability photogenerated electrons can be retained in g-C3N4And photogenerated holes of higher oxidation capacity can be retained in WO3On VB of (c). These retained electrons and holes may exhibit greater reoxidation capabilities. FIG. 6b further shows the charge transfer between 2D/2D heterojunctions. It is clear that the 2D/2D structure provides more contact area, which is beneficial for charge transfer. Furthermore, WO3And g-C3N4The intimate contact between them also results in a smaller interface resistance, resulting in easier interface charge transfer.
The invention provides an ultrathin 2D/2D WO3/g-C3N4The preparation method of the Z-type heterojunction photocatalyst is simple, and the ultrathin 2D/2D WO prepared simultaneously3/g-C3N4The Z-type heterojunction photocatalyst has a novel structure, and the efficiency and the photocatalytic stability of photocatalytic hydrogen production can be greatly improved by the planar structure and Z-type charge transfer.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. Ultra-thin 2D WO3/g-C3N4The preparation method of the Z-type heterojunction photocatalyst is characterized by comprising the following steps:
s1 preparation of ultrathin 2D WO3Nanosheet, bovine serum albumin is used as a stripping agent, and phase WO is stripped through ultrasound3;
S2, preparation of ultrathin 2D g-C3N4Nanosheets;
s3, by 2D WO3Nanosheets and 2D g-C3N4Ultrathin 2D WO prepared by nanosheet3/g-C3N4A Z-type heterojunction photocatalyst;
step S3 includes the following steps:
ultra-thin 2D g-C3N4Dispersing the nanoplatelets into a lactic acid solution and then dispersing the 2D WO3Adding the nanosheet into the solution, controlling the pH value of the mixed solution to be 4, continuously stirring for 2h, centrifuging, collecting precipitate, washing and drying.
2. The method of claim 1, wherein the step S1 includes the steps of:
step S11, preparation of bulk phase WO3(ii) a And
step S12, preparing ultrathin 2D WO3Nanosheets.
3. The method of claim 2, wherein the step S11 includes the steps of:
s111, adding Na2WO4·2H2O dispersed in HNO3Stirring thoroughly in the solution, then centrifuging to collect the precipitate, and washing the precipitate with water to pH 7;
s112, drying the obtained precipitate in an oven for 12 hours, and then calcining the dried precipitate at 500 ℃ for 3 hours to obtain a bulk phase WO3。
4. The method of claim 1, wherein the step S2 includes the steps of:
s21, loading urea into a crucible, covering the crucible, calcining at 550 ℃ for 2h at a heating rate of 5 ℃/min to obtain bulk phase-g-C3N4(ii) a And
s22 preparation of bulk-g-C from S213N4Grinding, loading into crucible, calcining at 550 deg.C for 2 hr at a heating rate of 5 deg.C/min to obtain ultrathin 2D g-C3N4Nanosheets.
5. Ultra-thin 2D WO3/g-C3N4A Z-type heterojunction photocatalyst, characterized by comprising 2D WO3And 2D g-C3N4And is prepared by the preparation method as described in any one of claims 1 to 4.
6. The ultra-thin 2D WO of claim 53/g-C3N4A Z-type heterojunction photocatalyst, characterized in that 2D WO3And 2D g-C3N4The mass ratio of (A) to (B) is 1-3: 10.
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