CN108493268B - A kind of diamond ultraviolet detector three-diemsnional electrode structure and preparation method thereof - Google Patents
A kind of diamond ultraviolet detector three-diemsnional electrode structure and preparation method thereof Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 147
- 239000010432 diamond Substances 0.000 title claims abstract description 147
- 238000002360 preparation method Methods 0.000 title description 6
- 239000013078 crystal Substances 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000011435 rock Substances 0.000 claims description 2
- 230000004043 responsiveness Effects 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 2
- 230000012010 growth Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101150094373 Padi4 gene Proteins 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
The invention discloses a kind of diamond ultraviolet detector three-diemsnional electrode structures, including the single-crystal diamond substrate and intrinsic single-crystal diamond epitaxial layer being stacked, diamond epi-layer surface outwardly protrude and be provided with several diamond strips being parallel to each other, diamond epi-layer surface be additionally provided with two metal electrode pad being respectively used to as anode and cathode；The diamond strips equidistant interval passed perpendicularly through is provided with even number interdigital electrode, according to interdigital electrode put in order successively define the number of interdigital electrode 5 be 1,2,3 ..., n, then number is that the interdigital electrode of odd number is connected on the same metal electrode pad4, and number is that the interdigital electrode of even number is connected on another metal electrode pad.Solve the problems, such as that difficult using substrate when vertical sandwich electrode structure and thin film separation, the carrier collection time is long low with collection efficiency, simultaneously, solve the problems, such as that field uniformity is bad when using coplanar interdigitated electrode structure, to improve the responsiveness and time response performance of detector.
Description
[technical field]
The invention belongs to technical field of photoelectric detection, it is related to a kind of diamond ultraviolet detector three-diemsnional electrode structure and its system
Make method.
[background technique]
Ultraviolet photoelectric survey technology is a kind of highly important technology, can be widely applied to space fire defector, smog report
The fields such as police, space communication.It is very high to the material requirements of detector since working environment is complicated severe.Diamond conduct
A kind of wide bandgap semiconductor, cutoff wavelength have natural visible light optical filtering at 225 nanometers, are very suitable for preparation day blind purple
External detector.Meanwhile diamond has many excellent performances, thermal conductivity is high, and heat is good with chemical stability, has good
Anti-radiation performance.These all make diamond have big advantage in ultraviolet detector field.
Diamond UV photodetector is studied there are many people at present.But traditional diamond ultraviolet photoelectric
Surveying device electrode structure is mainly coplanar interdigitated electrode structure and vertical sandwich structure.For vertical structure, electric fields uniform
Property is good, is conducive to the drift motion of photo-generated carrier, so that sensitivity and collection efficiency are higher.Since ultraviolet light is in Buddha's warrior attendant stone material
Penetration depth is limited in material, then needs diamond thin to accomplish very thin, and it is as few as possible to be nucleated planar defect density, in this way,
Photo-generate electron-hole can just lose as few as possible in interelectrode Drift Process, so that reaching the load at electrode
Stream is more, contributes charge collection efficiency and sensitivity big.But for diamond epitaxial film and self-supporting mono-crystal diamond
For film, integral thickness is thicker, and the drift and collection to carrier are unfavorable.
Coplanar interdigitated electrode structure is the improvement to vertical sandwich structure.Since ultraviolet light penetrates in diamond film
Depth is smaller, focuses primarily upon surface, therefore interdigital electrode is prepared on diamond surface, and it is attached can preferably to collect surface
Close photo-generate electron-hole pair.Since ultraviolet light is decayed rapidly in the material, after penetrating certain depth, very to the contribution of electric current
It is small, therefore the collection efficiency of interdigital electrode is also relatively high.And interdigital electrode is interlaced, so that detector effectively detects
Area increases, and has very big contribution to the responsiveness of detector.But the field uniformity of interdigital electrode is not so good as vertical structure,
When uv power is larger, field distribution will unevenly be had an impact the collection of photo-generate electron-hole pair.
Many people attempt the detector of preparation three-dimensional structure at present, three-diemsnional electrode are embedded to inside diamond, to change
Field distribution near kind surface, improves the carrier collection ability of device.But the preparation method of this three-diemsnional electrode compares
Complexity, alignment difficulty are larger.In order to solve this problem, we are being greatly simplified using a kind of novel three-diemsnional electrode structure
While preparation process, the responsiveness and time response performance of device are improved.
[summary of the invention]
The object of the present invention is to provide one kind, to solve using substrate when vertical sandwich electrode structure and thin film separation
Difficult, the carrier collection time long problem low with collection efficiency, meanwhile, it solves equal using electric field when coplanar interdigitated electrode structure
The bad problem of even property, to improve the responsiveness and time response performance of detector.
The invention adopts the following technical scheme: a kind of diamond ultraviolet detector three-diemsnional electrode structure, including be stacked
Single-crystal diamond substrate and intrinsic single-crystal diamond epitaxial layer, be provided with if the diamond epi-layer surface outwardly protrudes
The diamond strips that dry item is parallel to each other, the diamond epi-layer surface, which is additionally provided with, to be respectively used to as anode and cathode
Two metal electrode pad；
It passes perpendicularly through the diamond strips equidistant interval and is provided with even number interdigital electrode, according to the arrangement of interdigital electrode
Sequence successively define the number of interdigital electrode 5 be 1,2,3 ..., n, then number be odd number interdigital electrode be connected to it is same
On metal electrode pad, number is that the interdigital electrode of even number is connected on another metal electrode pad.
Further, diamond strips are quadrangular, and interdigital electrode is quadrangular.
Further, diamond strips protrude the height of the intrinsic single-crystal diamond epitaxial layer for 100nm-500nm, and institute
The height for stating diamond strips is not more than the thickness of the intrinsic single-crystal diamond epitaxial layer.
Further, diamond strips along the intrinsic single-crystal diamond epitaxial layer direction width be 100nm-10 μm, two
The spacing of two diamond strips is 100nm-5 μm, and the spacing of the diamond strips is less than the width of the diamond strips.
Further, interdigital electrode along the intrinsic single-crystal diamond epitaxial layer direction width be 100nm-10 μm, two
The spacing of two interdigital electrodes is 100nm-50 μm, and the spacing of the interdigital electrode is no more than the inter-digital electrode width
10 times.
Further, single-crystal diamond substrate is high temperature and pressure substrate or cvd diamond substrate, is oriented to (100) side
To.
Further, diamond epitaxial layer with a thickness of 150nm-1 μm, nitrogen element content is lower than 1ppm.
Second of technical solution that the present invention uses is a kind of production side of diamond ultraviolet detector three-diemsnional electrode structure
Method, method includes the following steps:
Step 1, grown on single-crystal diamond substrate using microwave plasma CVD method one layer it is intrinsic
Single-crystal diamond epitaxial layer；
Step 2 etches several diamond strips being parallel to each other in intrinsic single-crystal diamond epi-layer surface；
Step 3, use MPCVD method on the sample after step 2 is etched regrowth a layer thickness for the sheet of 10-30nm
Levy single-crystal diamond epitaxial layer；
Step 4 is prepared on intrinsic single-crystal diamond epitaxial layer respectively as anode and two metal electrode pad of cathode,
Again on intrinsic single-crystal diamond epitaxial layer, passes perpendicularly through the diamond strips equidistant interval and prepares even number interdigital electrode,
According to interdigital electrode put in order successively define the number of interdigital electrode be 1,2,3 ..., n, then will number as the interdigital of odd number
Electrode is connected on the same metal electrode pad, and the interdigital electrode for numbering as even number is connected to another metal electrode
On pad.
Further, in step 2 using Etching Technologies of Diamond come etching diamond item.
Further, two metal electrode pad and interdigital electrode are prepared using photoetching and film deposition techniques in step 4.
Compared with prior art, the present invention, which at least has the advantages that, is limited in carrier in diamond strips in fact
Existing quasi- one-dimension transport, while using the internal gain of big surface area/volume ratio raising device, to improve the response of detector
Degree and time response performance.
[Detailed description of the invention]
Fig. 1 is a kind of structural schematic diagram of diamond ultraviolet detector three-diemsnional electrode structure of the present invention.
Wherein: 1. single-crystal diamond substrates, 2. intrinsic single-crystal diamond epitaxial layers, 3. diamond strips, 4. metal electrodes
Pad, 5. interdigital electrodes.
[specific embodiment]
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.
The present invention provides a kind of three-diemsnional electrode structures of diamond ultraviolet detector, including the monocrystalline gold being stacked
Hard rock substrate 1 and intrinsic single-crystal diamond epitaxial layer 2,2 surface of diamond epitaxial layer outwardly protrude be provided with several mutually
Parallel diamond strips 3,2 surface of diamond epitaxial layer be additionally provided be respectively used to as anode and cathode two metal electricity
Pole pad4；
3 equidistant interval of diamond strips passed perpendicularly through is provided with even number interdigital electrode 5, according to the arrangement of interdigital electrode 5
Sequence successively define the number of interdigital electrode 5 be 1,2,3 ..., n, then number be odd number interdigital electrode 5 be connected to it is same
On metal electrode pad4, number is that the interdigital electrode 5 of even number is connected on another metal electrode pad4.
Single-crystal diamond substrate 1 can be high temperature and pressure synthesis substrate, is also possible to CVD synthesis substrate, can also be certainly
Diamond thin is supported, orientation is (100) direction.The shape of single-crystal diamond substrate 1 be rectangle, circle, ellipse or
Other shapes.
Intrinsic single-crystal diamond epitaxial layer 2 realizes that reaction gas uses methane, hydrogen by the epitaxial growth of MPCVD technology
And nitrogen, growth thickness are 150nm-1 μm.Percent by volume shared by nitrogen is 0-0.01%, obtained intrinsic single crystal diamond
2 nitrogen element contents are lower than 1ppm in stone epitaxial layer.
Diamond strips 3 are quadrangular, are prepared by Etching Technologies of Diamond, generally there is induction ion coupling technique and reaction
Two kinds of ion etching technology, etching gas used is oxygen.Diamond strips 3 protrude the height of intrinsic single-crystal diamond epitaxial layer 2
For 100nm-500nm, and it is no more than the growth thickness of intrinsic single-crystal diamond epitaxial layer 2.In order to guarantee 3 pairs of diamond strips loads
Stream constrains and takes into account big effective area and effective volume, and the width of diamond strips 3 is 100nm-10 μm, diamond strips
Spacing between 3 is 100nm-5 μm, and the spacing of diamond strips 3 is less than the width of diamond strips 3.
After the completion of prepared by diamond strips 3, need to carry out sample again single-crystal diamond intrinsic epitaxial layer 2 are raw
It is long, it is damaged with repairing etching to surface bring.The parameter of this growth course is identical as the parameter of the first secondary growth, growth thickness
For 10-30nm.
Interdigital electrode 5 is quadrangular, and interdigital electrode 5 is arranged to the structure vertical with diamond strips 3, guarantee carrier along
The movement of 3 direction of diamond strips, realizes quasi- one-dimension transport.Width of the interdigital electrode 5 along intrinsic 2 direction of single-crystal diamond epitaxial layer be
100nm-10 μm, its spacing is 100nm-50 μm, and electrode spacing is no more than 10 times of width.Metal electrode pad4 connection one
A or multiple interdigital electrodes 5 are tested convenient for lead.The material of metal electrode pad 4 and interdigital electrode 5 can be identical, can also
With difference.
The present invention also provides a kind of production method of diamond ultraviolet detector three-diemsnional electrode structure, this method include with
Lower step:
Step 1, grown on single-crystal diamond substrate 1 using microwave plasma CVD method one layer it is intrinsic
Single-crystal diamond epitaxial layer 2；
Step 2 goes out several diamond strips being parallel to each other 3 in intrinsic 2 surface etch of single-crystal diamond epitaxial layer；Usually
It can be using Etching Technologies of Diamond come etching diamond item 3；
Step 3, use MPCVD method on the sample after step 2 is etched regrowth a layer thickness for the sheet of 10-30nm
Levy single-crystal diamond epitaxial layer 2；
Step 4 is prepared on intrinsic single-crystal diamond epitaxial layer 2 respectively as anode and two metal electrodes of cathode
Pad4, then on intrinsic single-crystal diamond epitaxial layer 2,3 equidistant interval of diamond strips passed perpendicularly through prepares the interdigital electricity of even number
Pole 5, according to interdigital electrode 5 put in order successively define the number of interdigital electrode 5 be 1,2,3 ..., n, then be odd number by number
Interdigital electrode 5 be connected on the same metal electrode pad4, the interdigital electrode 5 for numbering as even number is connected to another
On metal electrode pad4.Usually two metal electrode pad and interdigital electrode 5 can be prepared using photoetching and film deposition techniques.
Embodiment
Such as Fig. 1, diamond ultraviolet detector three-diemsnional electrode structure, single-crystal diamond substrate 1 is the sheet of high temperature and pressure synthesis
Single-crystal diamond is levied, having a size of 3*3*0.3mm3.Using MPCVD method in 1 surface epitaxial growth 250nm of single-crystal diamond substrate
Intrinsic single-crystal diamond epitaxial layer 2, growth conditions are as follows: reaction gas is methane, hydrogen and nitrogen, grows air pressure 80Torr, gas
Body flow is 500sccm, and percent by volume shared by methane is 0.1%, and percent by volume shared by nitrogen is 0.001%, lining
Bottom temperature is 900 DEG C.The concentration of nitrogen is 0.01ppm in final intrinsic single-crystal diamond epitaxial layer 2.After growth, benefit
Metal Ti bar shaped is prepared on intrinsic single-crystal diamond epitaxial layer 2 with standard photolithography process and Magnetron Sputtering Thin Film depositing technics
Array recycles ICP lithographic technique to perform etching the diamond fraction being exposed, etching depth is as mask layer
200nm.Ti exposure mask is removed with acid after etching, obtains the array of diamond strips 3, height 200nm, width is 10 μm,
Away from being 5 μm.The intrinsic single-crystal diamond epitaxial layer 2 of 30nm, growth conditions are grown using MPCVD method again are as follows: reaction gas is
Methane, hydrogen and nitrogen grow air pressure 80Torr, gas flow 500sccm, and percent by volume shared by methane is 0.1%,
Percent by volume shared by nitrogen is 0.001%, and underlayer temperature is 900 DEG C.Nitrogen member in final intrinsic single-crystal diamond epitaxial layer 2
The concentration of element is 0.01ppm.After growth, sour processing is carried out to sample, surface is become into oxygen terminal from hydrogen terminal.Then sharp
Interdigital electrode 5 and metal electrode pad4, metal electricity are prepared simultaneously with standard photolithography process and electron beam evaporation film depositing technics
Pole pad4 and the material of interdigital electrode 5 are Ti/Au.
Compared with conventional planar detector, deep ultraviolet region photoelectric current and responsiveness improve finally obtained three dimension detector
100%, the response suppression ratio of deep ultraviolet and visible light improves 4 times, and the rise time has become faster one times, and fall time becomes faster
A quarter.
The responsiveness of sensitive detection parts depends on material self character and device design.Itself with regard to material, illumination
Effective area and effective volume it is bigger, then its responsiveness is higher.It is aligned for one-dimension transport, needs the size of material enough
Small, such effective volume and effective area are with regard to smaller.Therefore, it is necessary to take into account one-dimension transport and big effective area and effective body
Product, to promote device performance.
And in existing three-diemsnional electrode structure, being will be in metal post-shaped electrode or graphite columnar electrode embedment diamond
Portion plays the role of improving electric field.In the present invention, it is processed into strip structure using by diamond, electrode is arranged to
The form vertical with diamond, so that carrier, which is limited in diamond strips, realizes quasi- one-dimension transport, and low-dimensional materials have
Big surface area/volume ratio, so that the inside gain of light of device improves, synthesis improves responsiveness and the response time of device.
The above content is merely illustrative of the invention's technical idea, and this does not limit the scope of protection of the present invention, all to press
According to technical idea proposed by the present invention, any changes made on the basis of the technical scheme each falls within claims of the present invention
Protection scope within.
Claims (10)
1. a kind of diamond ultraviolet detector three-diemsnional electrode structure, which is characterized in that including the single crystal diamond stone lining being stacked
Bottom (1) and intrinsic single-crystal diamond epitaxial layer (2), described diamond epitaxial layer (2) surface, which outwardly protrudes, is provided with several
The diamond strips (3) being parallel to each other, described diamond epitaxial layer (2) surface, which is additionally provided with, to be respectively used to as anode and cathode
Two metal electrode pad (4)；
It passes perpendicularly through described diamond strips (3) equidistant interval and is provided with even number interdigital electrode (5), according to interdigital electrode (5)
Put in order successively define the number of interdigital electrode 5 be 1,2,3 ..., n, then number is that the interdigital electrode (5) of odd number is all connected with
On to the same metal electrode pad (4), number is that the interdigital electrode (5) of even number is connected to another metal electrode pad (4)
On.
2. a kind of diamond ultraviolet detector three-diemsnional electrode structure as described in claim 1, which is characterized in that the diamond
Item (3) is quadrangular, and the interdigital electrode (5) is quadrangular.
3. a kind of diamond ultraviolet detector three-diemsnional electrode structure as claimed in claim 2, which is characterized in that the diamond
Item (3) protrudes the height of the intrinsic single-crystal diamond epitaxial layer (2) for 100nm-500nm, and the height of the diamond strips (3)
Degree is not more than the thickness of the intrinsic single-crystal diamond epitaxial layer (2).
4. a kind of diamond ultraviolet detector three-diemsnional electrode structure as claimed in claim 2 or claim 3, which is characterized in that the gold
Width of the hard rock item (3) along intrinsic single-crystal diamond epitaxial layer (2) direction is 100nm-10 μm, two-by-two the diamond strips
(3) spacing is 100nm-5 μm, and the spacing of the diamond strips (3) is less than the width of the diamond strips (3).
5. a kind of diamond ultraviolet detector three-diemsnional electrode structure as claimed in claim 2, which is characterized in that the interdigital electricity
Width of the pole (5) along intrinsic single-crystal diamond epitaxial layer (2) direction is 100nm-10 μm, two-by-two the interdigital electrode (5)
Spacing be 100nm-50 μm, and the spacing of the interdigital electrode (5) is no more than 10 times of the interdigital electrode (5) width.
6. a kind of diamond ultraviolet detector three-diemsnional electrode structure as described in any one of claim 1,2,3,5, special
Sign is that the single-crystal diamond substrate (1) is high temperature and pressure substrate or cvd diamond substrate, is oriented to (1 0 0) side
To.
7. a kind of diamond ultraviolet detector three-diemsnional electrode structure as described in any one of claim 1,2,3,5, special
Sign is, the diamond epitaxial layer (2) with a thickness of 150nm-1 μm, nitrogen element content is lower than 1ppm.
8. a kind of production side of diamond ultraviolet detector three-diemsnional electrode structure as described in any one of claim 1-7
Method, which is characterized in that method includes the following steps:
Step 1 grows one layer of intrinsic list using microwave plasma CVD method on single-crystal diamond substrate (1)
Diamond epitaxial layer (2)；
Step 2 goes out several diamond strips being parallel to each other (3) in intrinsic single-crystal diamond epitaxial layer (2) surface etch；
Step 3, use MPCVD method on the sample after step 2 is etched regrowth a layer thickness for the intrinsic list of 10-30nm
Diamond epitaxial layer (2)；
Step 4 is prepared on intrinsic single-crystal diamond epitaxial layer (2) respectively as anode and two metal electrode pad of cathode
(4), it then on intrinsic single-crystal diamond epitaxial layer (2), passes perpendicularly through described diamond strips (3) equidistant interval and prepares even number
Interdigital electrode (5), according to interdigital electrode (5) put in order successively define the number of interdigital electrode (5) be 1,2,3 ..., n, then
The interdigital electrode (5) for numbering as odd number is connected on the same metal electrode pad (4), the interdigital electricity for even number will be numbered
Pole (5) is connected on another metal electrode pad (4).
9. production method as claimed in claim 8, which is characterized in that carved in the step 2 using Etching Technologies of Diamond
It loses diamond strips (3).
10. production method as claimed in claim 8, which is characterized in that use photoetching and film deposition techniques in the step 4
Prepare two metal electrode pad (4) and interdigital electrode (5).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810398932.4A CN108493268B (en) | 2018-04-28 | 2018-04-28 | A kind of diamond ultraviolet detector three-diemsnional electrode structure and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1874009A (en) * | 2006-06-27 | 2006-12-06 | 上海大学 | Method for preparing detector in ultraviolet light |
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|---|---|---|---|---|
| JP4677634B2 (en) * | 2005-11-14 | 2011-04-27 | 独立行政法人物質・材料研究機構 | Diamond UV sensor element |
| CN102110735B (en) * | 2010-10-13 | 2012-09-26 | 兰州大学 | Semiconductor ultraviolet detection sensor and preparation method thereof |
| CN104752532B (en) * | 2015-01-17 | 2017-01-25 | 王宏兴 | Three-dimensional electrode structure of semiconductor device as well as preparation method and application of three-dimensional electrode structure |
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| CN1874009A (en) * | 2006-06-27 | 2006-12-06 | 上海大学 | Method for preparing detector in ultraviolet light |
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