CN106024931A - InAs/GaSb super-lattice photonic crystal infrared detector and manufacturing method thereof - Google Patents
InAs/GaSb super-lattice photonic crystal infrared detector and manufacturing method thereof Download PDFInfo
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- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 89
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 54
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an InAs/GaSb super-lattice photonic crystal infrared detector and a manufacturing method thereof. Photonic crystal arrays are formed in a surface absorption area of the infrared detector; layout distances of the photonic crystal arrays are smaller than a cutoff wavelength of the infrared detector; and the photonic crystal arrays are conical arrays, pyramidal arrays or cylindrical arrays which are produced in the surface absorption area of an InAs/GaSb super-lattice material layer. According to the InAs/GaSb super-lattice photonic crystal infrared detector, conical photonic crystal arrays, pyramidal photonic crystal arrays or cylindrical photonic crystal arrays whose distances are smaller than the cutoff wavelength of the infrared detector and which are produced in an absorption area of an InAs/GaSb super-lattice infrared detector are utilized, the absorption rate of the infrared detector in a full-wave band range is improved, the absorption spectrum is expanded, and the detection of a full-spectrum range smaller than the cutoff wavelength of an InAs/GaSb super-lattice detector can be realized.
Description
Technical field
The present invention relates to wide spectrum Infrared Detectors technical field, relate more specifically to one
InAs/GaSb superlattices photonic crystal Infrared Detectors and preparation method thereof.
Background technology
Infrared Detectors is that a kind of can being converted into by sightless infra-red radiation can measure the photosensitive of signal
Device, it all has extensively in fields such as military, meteorological, industry, environmental science and medical diagnosiss
Application.The detector of covering visible light wave band has extremely important in terms of satellite remote-sensing image data
Application, and this technology is at home still in open position.Current business-like Infrared Detectors is big
Many based on mercury cadmium telluride (HgCdTe), antimonide superlattices (InAs/GaSb) isostructural detector.
Wherein, InAs/GaSb superlattices detector with its low cost, low growth difficulty, band gap is adjustable
The advantages such as joint become important candidate materials prepared by wide spectral detector.But current research still is limited to
In three atmospheric windows a certain section, such as 1-3 μm shortwave, 3-5 μm medium wave etc., response spectra scope mistake
Short, cause and cannot realize under whole adverse circumstances, as simultaneously at smog, night, dust weather etc.
Complete blur-free imaging.Based on this problem, have now researcher and inhaled by growth multilamellar different-waveband
Receive district and realize double-colored or polychrome imaging, but it still suffers from the device of many problem, such as different-waveband
Energy level difference, easily occurs that the poor and actual multiband that cannot realize of some wave band imaging effect is visited
Surveying, existing double-color detector has the inferior positions such as cost is high, refrigeration power consumption is big, and is applied to focal plane
The defects such as device reading circuit preparation difficulty, distance popularization and application still have the biggest difficulty.
Summary of the invention
In view of this, it is an object of the invention to provide a kind of InAs/GaSb superlattices photonic crystal red
External detector and preparation method thereof, in order to solve in above-mentioned technical problem at least one.
To achieve these goals, as one aspect of the present invention, the invention provides one
InAs/GaSb superlattices photonic crystal Infrared Detectors, in the Surface absorption district of described Infrared Detectors
Forming photonic crystal arrays, the arrangement pitches of described photonic crystal arrays is less than described Infrared Detectors
Cutoff wavelength.
Wherein, described photonic crystal arrays is on the surface formed by InAs/GaSb superlattice material layer
Cone, pyramid or cylindrical array prepared by the surface of uptake zone.
Wherein, described InAs/GaSb superlattice material layer is InAs and the GaSb alternate group of equal thickness
The superlattice material layer become.
Wherein, described InAs/GaSb superlattice material layer be InAs and GaSb of not equal thickness alternately
The superlattice material layer of composition.
Wherein, described photonic crystal arrays is equidistantly arrangement.
Wherein, described photonic crystal arrays is unequal-interval arrangement.
As another aspect of the present invention, present invention also offers a kind of InAs/GaSb superlattices light
The preparation method of sub-crystal Infrared Detectors, comprises the following steps:
Substrate is epitaxially formed the InAs/GaSb superlattice structure of cushion and Lattice Matching, obtains
Infrared Detectors epitaxial wafer；
Detector table top is prepared on described epitaxial wafer surface；
A photonic crystal arrays is formed on the InAs/GaSb superlattice structure surface of described detector table top,
The arrangement pitches of described photonic crystal arrays is less than the cutoff wavelength of described Infrared Detectors；
The described InAs/GaSb superlattices photon of finished product it is prepared as after being passivated by semi-finished product obtained above
Crystal Infrared Detectors.
Wherein, described detector table top is prepared on epitaxial wafer surface and at detector table top
InAs/GaSb superlattice structure surface forms the step of a photonic crystal arrays and includes:
Use standard photolithography techniques or electron beam lithography, and rotten with phosphoric acid, citric acid or hydrogen peroxide
Erosion or employing ICP etching carry out the InAs/GaSb superlattice structure surface system at described detector table top
Standby described photonic crystal arrays.
Wherein, the InAs/GaSb superlattice structure of described Lattice Matching is equal thickness or non-equal thickness
The superlattice material layer of InAs and GaSb alternately composition, its thickness sets according to the cutoff wavelength of device
Meter.
As another aspect of the invention, present invention also offers a kind of according to preparation as above
The InAs/GaSb superlattices photonic crystal Infrared Detectors that method prepares.
Understanding based on technique scheme, the Infrared Detectors of the present invention has the advantages that (1)
The raising of all band absorbance less than InAs/GaSb super crystal lattice material cutoff wavelength can be realized, real
Existing wide spectrographic detection, spectrum width can be extended to visible ray, and manufacturing process is simple；(2) compose in extended response
While scope, it is also possible to improve Infrared Detectors absorbance in the range of former response wave band, improve
Device performance；(3) this photon crystal device can realize cutting less than InAs/GaSb superlattices detector
The only detection of the full spectral region of wavelength；(4) present invention takes to prepare the side of photonic crystal in uptake zone
Method, it is achieved less than the raising of all band absorbance of device cutoff wavelength, it is achieved wide spectrographic detection, this
Device performance prepared by the method for kind is stable and homogeneity is good, and preparation technology and subsequent readout circuit are with existing
Technology matching degree high, practical.
Accompanying drawing explanation
Fig. 1 is the appearance structure generalized section of several photonic crystal arrays of the present invention；
Fig. 2 is the structural representation of the InAs/GaSb superlattices photonic crystal Infrared Detectors of the present invention；
Fig. 3 is the electromicroscopic photograph of the one of which photonic crystal SEM pattern prepared；
Fig. 4 is the photonic crystal detector quantum effect with conventional detector of 5 μm cutoff wavelengths of preparation
Rate curve chart.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with concrete real
Execute example, and referring to the drawings, the present invention is described in further detail.
The invention discloses a kind of with uptake zone at the InAs/GaSb superlattices photonic crystal of material surface
The wide spectral detector of preparation based on detector, utilizes structure on uptake zone to be smaller than cut-off wave
Long cone, pyramid or pillar-shaped crystal array increase strong light absorption, such that it is able to realize ultraviolet,
Visible response to infrared full-wave section spectral region.
More specifically, the InAs/GaSb superlattices photonic crystal Infrared Detectors of the present invention, Qi Zhong
Photonic crystal arrays is prepared in the Surface absorption district of this InAs/GaSb superlattices Infrared Detectors, and it is right to strengthen
The absorption of light, it is achieved wide spectrographic detection.
Cone that this photonic crystal arrays refers to prepare on InAs/GaSb superlattice material layer surface,
Pyramid or pillar-shaped crystal array, can be constructed as equal or unequal, but be smaller than material
The more effective fruit of cutoff wavelength of glassware part.
The uptake zone of this infrared detector material need to be grown in material surface so that preparing photonic crystal
Array.Photonic crystal arrays can be prepared by wet etching or dry plasma ICP.
As preferably, this Surface absorption district is the surface of InAs/GaSb superlattices light absorbing zone, should
InAs/GaSb superlattices light absorbing zone is e.g.InAs andThe super crystalline substance of GaSb alternately composition
Lattice, but be not limited to this, as long as InAs/GaSb composition to absorb infrared superlattices the most permissible
It is fabricated to absorbed layer.Such asInAs andThe absorption shortwave superlattices of GaSb alternately composition,InAs andThe absorption long wave superlattices of GaSb alternately composition all can regard light absorbing zone.
The preparation in the uptake zone of InAs/GaSb superlattices Infrared Detectors is utilized to be smaller than cutoff wavelength
Cone, pyramid or cylindricality photonic crystal arrays, it is possible to achieve Infrared Detectors is at all band
In the range of the raising of absorbance, thus extend absorption spectrum.
The invention also discloses the preparation side of a kind of InAs/GaSb superlattices photonic crystal Infrared Detectors
Method, specific implementation method is: extension GaSb cushion, Lattice Matching successively on GaSb substrate
InAs/GaSb superlattice structure (uptake zone finally grows) and InAs or GaSb cap rock；Pass through
Regulation each cycle InAs layer and the thickness of GaSb layer, the scope of absorbable wavelength from short-wave infrared to
Long wave, very long wave infrared band；After the epitaxial wafer table top prepared completes, use standard lithographic
Technology or electron beam lithography, and carve with phosphoric acid, citric acid, hydrogen peroxide corrosion or employing ICP
Erosion preparation cone, pyramid or cylindricality photonic crystal arrays；Anodic sulfide is used to add room temperature afterwards
Deposition SiO2Mode be passivated, open unthreaded hole and electrode window through ray afterwards；Peel off after depositing Ti/Pt/Au
Go out electrode, prepare the full spectrum that can realize less than InAs/GaSb superlattices detector cutoff wavelength
The detection of scope.
More specifically, this preparation method includes:
Extension GaSb the cushion, (absorption of InAs/GaSb superlattice structure successively on GaSb substrate
District finally grows) and InAs or GaSb cap rock.InAs/GaSb super crystal lattice material is all brilliant with GaSb
Lattice mate.InAs/GaSb superlattices are made up of InAs layer and the GaSb layer of alternating growth, pass through
Regulation each cycle InAs layer and the thickness of GaSb layer, the scope of absorbable wavelength from short-wave infrared to
Long wave, very long wave infrared band.
The epitaxial wafer prepared uses standard photolithography techniques and makes with phosphoric acid, citric acid, hydrogen peroxide corrosion
Make table top or use ICP etching to make table top.
Prepare the material of table top and use standard photolithography techniques or electron beam lithography, and with phosphoric acid,
The corrosion of citric acid, hydrogen peroxide or employing ICP etching preparation cone, pyramid or cylindricality photon
Photonic crystal arrays.
Use anodic sulfide plating one layer of sulfur, then room temperature deposition SiO2It is covered on sulfur layer, photoetching
And by buffered hydrofluoric acid solution (BOE) or the etched open light hole of ICP and electrode window through ray.Use sulfur layer blunt
Change can reduce dark current, SiO with the dangling bonds of saturated mesa side walls2Physical passivation protective value is unstable
Fixed sulfuric horizon.
Photoetching also deposits one layer of Ti/Pt/Au, then peels off the metal gone except for the electrodes, Ti/Pt/Au
N-type GaSb and p-type GaSb that can mix with height form good Ohmic contact.
Below in conjunction with the accompanying drawings a preferred embodiment of the present invention is illustrated explanation further.
Fig. 2 is the generalized section of a kind of photonic crystal width spectrum Infrared Detectors of the present invention, and it is
As a example by a kind of medium wave NBN type InAs/GaSb superlattices Infrared Detectors, but the present invention does not limit
In this kind of medium wave NBN type InAs/GaSb superlattices Infrared Detectors.The specific embodiment party of the program
Formula is as follows:
As in figure 2 it is shown, on GaSb substrate 1, forming extension carrier concentration is 1～3 × 1018、
Thickness is the N-type GaSb cushion 2 of 0.5 μm；Extension carrier concentration is 1～3 × 1018, thick
Degree is the InAs/GaSb superlattice n-type contact layer 3 of 0.5 μm, and thickness is 0.5 μm
InAs/GaSb/AlSb barrier layer 4；Involuntary doping, or weak N doping, thickness is 3 μm
InAs/GaSb superlattices light absorbing zone 5.
Wherein, InAs/GaSb superlattices light absorbing zone 5 is alternately arranged by 400-600 cycle
InAs layer and GaSb layer composition.In each cycle, the thickness of InAs isGaSb in each cycle
Layer thickness is
InAs/GaSb/AlSb barrier layer 4 is the InAs alternately arranged by 100 cycles
/GaSb/AlSb/GaSbConstitute.
The epitaxial wafer prepared uses standard photolithography techniques and makes with phosphoric acid, citric acid, hydrogen peroxide corrosion
Make table top or use ICP etching to make table top, the mesa etch degree of depth 3.9 μm, eroding to N-type and connect
Contact layer 3.
Afterwards use standard photolithography techniques and with phosphoric acid, citric acid, hydrogen peroxide corrode making table top or
Use ICP to be etched in table top uptake zone and make photonic crystal arrays, array etching depth 2 μm, corrosion
Only carry out on InAs/GaSb superlattices light absorbing zone 5.
Then in the ethylene glycol solution of anhydrous sodium sulfide, electroplate the sulfur of one layer of 30nm, then use magnetic control
Sputtering or the SiO of plasma deposition chamber one layer of 200nm of temperature accumulation2Cover on sulfur, formed blunt
Change layer 6.Photoetching is also corroded or plasma etching SiO with buffered hydrofluoric acid solution2With sulfur layer, at table top
Go up and on N-type contact layer 3, perforate for electrode contact and forms light hole.
Photoetching also deposits a Ti/Pt/AuLayer is to form Europe
Nurse contacts, and then peels off the metal gone except for the electrodes, finally absorbs at InAs/GaSb superlattices light
Electrode 7, N-type contact layer 3 and bottom electrode 8 is retained on layer 5.
The InAs/GaSb medium wave superlattices photonic crystal Infrared Detectors prepared is carried out corresponding spectrum
Test and black matrix test, the device quantum efficiencies being calculated is as shown in Figure 4.It will be seen that system
The detector of standby photonic crystal achieves the detection in the range of 0.8-5 mu m waveband, and does not prepares photon
The detector of crystal does not then respond at 0.8-2 μm short-wave band.By preparing photonic crystal, device exists
All band quantum efficiency is obtained for lifting.And set owing to testing less than the device quantum efficiencies of 0.8 μm
Standby limitation, does not measure, but according to equipment performance, and the decline of 0.8-1 μm quantum efficiency also differs
Surely it is that device quantum efficiencies reduces, it is more likely that the impact of spectrogrph grating is caused.
Particular embodiments described above, is carried out the purpose of the present invention, technical scheme and beneficial effect
Further describe it should be understood that the foregoing is only the specific embodiment of the present invention,
Be not limited to the present invention, all within the spirit and principles in the present invention, any amendment of being made,
Equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. an InAs/GaSb superlattices photonic crystal Infrared Detectors, it is characterised in that in institute
The Surface absorption district stating Infrared Detectors forms photonic crystal arrays, the arrangement of described photonic crystal arrays
It is smaller than the cutoff wavelength of described Infrared Detectors.
2. Infrared Detectors as claimed in claim 1, it is characterised in that described photonic crystal battle array
Row be prepare on the surface in the Surface absorption district formed by InAs/GaSb superlattice material layer cone,
Pyramid or cylindrical array.
3. Infrared Detectors as claimed in claim 2, it is characterised in that described InAs/GaSb
Superlattice material layer is the superlattice material layer of InAs and the GaSb alternately composition of equal thickness.
4. Infrared Detectors as claimed in claim 2, it is characterised in that described InAs/GaSb
Superlattice material layer is the superlattice material layer of InAs and the GaSb alternately composition of not equal thickness.
5. Infrared Detectors as claimed in claim 1, it is characterised in that described photonic crystal battle array
It is classified as equidistantly arrangement.
6. Infrared Detectors as claimed in claim 1, it is characterised in that described photonic crystal battle array
It is classified as unequal-interval arrangement.
7. a preparation method for InAs/GaSb superlattices photonic crystal Infrared Detectors, its feature
It is, comprises the following steps:
Substrate is epitaxially formed the InAs/GaSb superlattice structure of cushion and Lattice Matching, obtains
Infrared Detectors epitaxial wafer；
Detector table top is prepared on described epitaxial wafer surface；
A photonic crystal arrays is formed on the InAs/GaSb superlattice structure surface of described detector table top,
The arrangement pitches of described photonic crystal arrays is less than the cutoff wavelength of described Infrared Detectors；
The described InAs/GaSb superlattices photon of finished product it is prepared as after being passivated by semi-finished product obtained above
Crystal Infrared Detectors.
8. preparation method as claimed in claim 7, it is characterised in that described on epitaxial wafer surface
Prepare detector table top and form a photon on the InAs/GaSb superlattice structure surface of detector table top
The step of crystal array includes:
Use standard photolithography techniques or electron beam lithography, and rotten with phosphoric acid, citric acid or hydrogen peroxide
Erosion or employing ICP etching carry out the InAs/GaSb superlattice structure surface system at described detector table top
Standby described photonic crystal arrays.
9. preparation method as claimed in claim 7, it is characterised in that described Lattice Matching
InAs/GaSb superlattice structure is the super of InAs and the GaSb alternately composition of equal thickness or non-equal thickness
Lattice material layer, its thickness designs according to the cutoff wavelength of device.
10. one kind prepares according to the preparation method described in claim 7 to 9 any one
InAs/GaSb superlattices photonic crystal Infrared Detectors.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994038A (en) * | 2017-12-08 | 2018-05-04 | 中国科学院长春光学精密机械与物理研究所 | A kind of enhanced silicon substrate four-quadrant photo detector of near-infrared and preparation method thereof |
| CN109524499A (en) * | 2017-09-18 | 2019-03-26 | 中国科学院半导体研究所 | The medium-wave infrared detector cells device and preparation method thereof that visible light is expanded |
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| CN109524499A (en) * | 2017-09-18 | 2019-03-26 | 中国科学院半导体研究所 | The medium-wave infrared detector cells device and preparation method thereof that visible light is expanded |
| CN109802004A (en) * | 2017-11-17 | 2019-05-24 | 中国科学院半导体研究所 | The preparation method of infrared detector light trapping structure |
| CN109802004B (en) * | 2017-11-17 | 2021-01-15 | 中国科学院半导体研究所 | Preparation method of optical trap structure of infrared detector |
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| CN112652720A (en) * | 2020-12-22 | 2021-04-13 | 青岛大学 | Perovskite solar cell based on two-dimensional photonic crystal structure |
| CN112652720B (en) * | 2020-12-22 | 2023-09-05 | 青岛大学 | Perovskite solar cell based on two-dimensional photonic crystal structure |
| CN113130676A (en) * | 2021-04-16 | 2021-07-16 | 中国科学院半导体研究所 | Focal plane infrared detector chip, detector and preparation method |
| CN115207150A (en) * | 2022-07-21 | 2022-10-18 | 北京工业大学 | High-speed photoelectric detector covered by full communication wave band |
| CN115207150B (en) * | 2022-07-21 | 2023-10-10 | 北京工业大学 | High-speed photoelectric detector covered by full communication wave band |
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