CN108472765A - 半导体工件的激光图案化方法 - Google Patents
半导体工件的激光图案化方法 Download PDFInfo
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Abstract
本发明提供一种半导体工件的激光图案化方法,可以单一传递步骤有效且快速的分离形成于一硬脆基板(6)上的半导体元件。该方法基于沿深入一工件(6)的切割轨迹形成断裂;过程中的热应力由至少两个加工(极短脉冲)激光束(7)的传递产生,包含第一及第二脉冲。该第一脉冲用以生成一热累积区,能更有效的吸收该第二脉冲,该第二脉冲产生足够的热梯度以产生机械故障,足以使该工件(6)断裂成片。
Description
技术领域
本发明设计激光材料加工;特别涉及一种用以分离硬脆半导体基板或晶粒的方法及***。
背景技术
已知晶圆切割在半导体元件的制造中扮演着极为重要的角色,能够使半导体元件的体积更小,且更为复杂。碳化硅(SiC)和氮化镓(GaN)基板专门用于新一代高频(HF)通信和高功率(HP)转换器。而由于碳化硅(SiC)和氮化镓(GaN)皆为一种非常坚硬的材料,故此种元件的生产须要先进的晶粒加工技术,以使该基板和各功能层(涂层)的各种内外部缺陷的呈现,在晶圆切割(分离)过程中缩到最小。由于初始晶圆或基板涂覆有排列复杂的官能化层与金属电极,且该基板的材料为特别硬质的材料,例如碳化硅(SiC),故上述加工变的更为困难。由此可知,由于各个官能化层表面通常具有不同物理性质,而与过去的基板不同,故习用的“激光切割”或其他类似的技术已不敷使用,是以,发展出可以提升加工率的方法是极为重要的课题。
于2013年10月8日公开的美国专利案(专利案号为US8551792(B2))揭露了一种切割半导体晶圆的方法。该方法包含沿着多个晶粒隔道划刻至少一电介质层,以去除晶圆一表面上的物质,其中,该电介质层以脉冲宽度为1至1000皮秒(picosecond)的激光进行划刻,且该激光具有一对应于该些脉冲之间且短于该材料的热弛豫时间的重复频率脉冲。而后,该半导体晶圆的金属层及至少部份的基板被切割。
于2003年5月13日公开的美国专利案(专利案号为US6562698(B2))揭露了一种单切半导体晶圆的方法,其步骤包含:将一第一激光束与一第二激光束瞄准该基板的顶面;通过扫描第一激光束并穿透该涂层,以于该涂层上形成多个划刻线;以及通过该第二激光束沿着该些划刻线切割该基板,以形成个别的切口。该设备包含一第一激光束,具有一第一波长,位于该基板涂层的上方,以及一第二激光,具有与该第一波常相异的一第二波长,且同样位于该基板涂层的上方。该涂层具有对应于该第一激光波长的一第一吸收系数,而该半导体基板具有一小于该第一吸收系数的一第二吸收系数。该第一激光束的能量被吸收到涂层以形成的划刻线,而该第二激光束沿着该些划刻线切割该基板。
于2005年4月28日公开的日本专利案(专利案号为JP2005116844(A))揭露了一种制造半导体元件的方法。该发明的目的在于,即使当组成表层的材质与半导体基板的材质不同时,能减少切削工件表层时产生的碎屑。该方法包含以下步骤:通过一第一激光束扫描半导体基板的半导体元件的一划刻线的表面以形成一沟槽,其中该第一激光束汇聚于一划刻线的表面上;以及通过多光子吸收,与将一第二激光束沿第一划刻线汇聚于该半导体基板的内侧,以形成一修饰区。由于一表面沟槽通过该第一激光束形成于该划刻线上,该半导体基板的各独立表面的碎屑或切痕产生可减少,且该半导体基板在形成该修饰区后将容易通过该第二激光束以多光子吸收而被切割。
先前技术的方法有对于基板厚度、材料类型,以及用于晶圆分离的加工质量的限制。为了能针对硬脆的材料做加工,例如附着有多个官能化涂层的碳化硅(SiC)或氮化镓(GaN),前述的现有技术需要加大功率的激光,或增加通过各该划刻线的激光束;同样地,在某些情况下,必须修改多层的材料层。如此一来,对于半导体元件的性能及产量都将会有帮助。
发明内容
有鉴于此,本发明的目的在于提供一种半导体工件的激光图案化方法,消除了上述的缺点,并提供了一种有效且快速的分离半导体元件的方法,其中该半导体元件形成于坚硬的基板上。在分离该元件或基板的过程中,也即劈裂/断裂(cleaving/breaking)或切割(dicing)该元件或基板的过程中,产生了因热应力导致的由一第一表面延伸的裂纹或断裂,而形成了一损坏(也可视为“修饰”)面,其中该些裂纹或断裂形成了一平整工件表面上的预期分离的轨迹。该应力由局部高温加热及随后的冷却该材料而产生,属于单一传递过程,因此能增加产量。而后所述的「工件(工件)」的定义包含基板、多层基板、晶圆、晶圆薄片、(多个)元件,或其他类似物,而该些类似物皆可被加工及进一步机械分离(沿切割面断离),且该些定义可交替着使用。
缘以达成上述目的,本发明提供的一种半导体工件的激光图案化方法,其中该工件包含至少一基层,由一材料制成,其中该材料具有介于2.5至4伏特(eV)的能带隙;该工件具有相互平行的一第一表面与一第二表面,且该方法使用一脉冲激光束放射源,其中该工件或加工激光束沿着一预期切割轨迹相对地移动。本方法的特征在于包含有以下步骤。
首先,形成至少两个脉冲激光束(加工脉冲光束),其中该至少两个脉冲激光束由该脉冲激光束放射源射出的一初始光束所形成,即具有一第一脉冲与一第二脉冲的一第一脉冲激光束及一第二脉冲激光束。接着,通过一聚光装置传递该至少两个脉冲激光束至该工件上及该工件中,其中该工件针对该第一脉冲激光束与该第二脉冲激光束进行相对地移动。该些脉冲延迟一时间间隔,其中该时间间隔略高于该基层材料的电子声子弛豫时间(electron-phonon relaxation time),也即该材料晶体的声子吸收时间。该时间间隔被设定为从数十到数百皮秒,而射入该切割表面的第一脉冲激光束用以在至少一热影响区块启动并维持表面烧蚀和热能积聚,而对应的第二脉冲激光束与所述热影响区块重叠。
本发明的效果在于,通过能量(热能)累积和“预热”(热影响区块)的步骤,该第二脉冲激光束产生的烧蚀及能量吸收将更加有效率。上述的“预热”与随后的烧蚀使该基层的表面显示出多个损坏结构,借此,所述损坏结构作为延伸进入
该基层深处的大型断裂和裂缝的前驱构造,其中该些损坏结构通过热梯度及快速的非均匀冷却所形成。该些大型断裂和裂缝则通过大量层体材料的张力所形成,且沿平面的预定切割轨迹形成。
附图说明
图1为本案第一实施例半导体工件的激光图案化方法的过程中的实时变化图,揭示该工件通过一脉冲对于其表面加工过程的实时变化;其中该工件沿该方向1线性平移。
图2为本案上述第一实施例的单张力产生图,揭示该碳化硅基板在吸收该第一及第二脉冲激光束的单一脉冲对的能量后,所产生的张力结果。
图3为本案上述第一实施例所须的激光加工设备,揭示欲进行本案半导体工件的激光图案化方法所须的最简易元件。
图4类同图3,揭示欲进行本案半导体工件的激光图案化方法所须的额外可选择元件。
图5为本案上述第一实施例所呈现的结果,揭示表面涂覆有金的基板经划刻后的结果。
图6为图5所述基板经切割后的侧视图。
具体实施方式
为能更清楚地说明本发明,现举一实施例并配合附图详细说明如后。本发明提供一用以分离半导体元件的激光加工方法,其中该半导体元件形成于包含有至少一硬脆材料层的单一基板上,而该硬脆材料尤其指碳化硅(SiC)。在制备一用于后续切割/劈裂/断裂程序的样品的过程中,大量的损坏结构有助于沿预定的分离面分离该工件,且减少该分离面的缺陷。另外一提的是,将经切割的晶圆分离成晶粒或芯片的技术,皆为本发明技术人员所熟知。
在一最佳实施例中,工件包含一主基层,由4H多型体(4H polytype)碳化硅(4H-SiC)所制成(当然也可以是其他的多形体或类型),且具有一金属、半导体,或介电涂层。该工件具有相互平行的一第一表面与一第二表面。该脉冲激光束放射源用以射出波长介于紫外线(UV)至中红外线(mid IR)光谱范围的射线(例如515或1030nm),且其脉冲持续时间少于1皮秒,较佳者介于200至500飞秒(fs)(FWHM为1.41)。该初始光束被引导至光束操纵组件,该光束操纵组件可具有至少两个光分束器及一时间延迟光路(两个可滑动镜面)。该第一光分束器将该初始光束分离成该第一及第二脉冲激光束,而该第二光分束器于所述两个脉冲激光束间被引入控制时间迟滞后,将该两个脉冲激光束结合至一单一光路径上。对本发明所属技术领域中具有通常知识者来说,为了产生所述第一及第二脉冲激光束,该束操纵组件可以多种方式排列。该两个脉冲激光束皆通过一聚光装置(聚焦镜及物镜等)被导入预定的划刻面并沿其上至少一切割轨迹,其中该聚光装置的数值孔径介于0.1至0.4之间。如图1所示,该第一及第二脉冲激光束2汇聚于该工件样品的表面。
该工件依线性方式平移,以使该第一及第二脉冲激光束传送至该预定的划刻面,其中该些脉冲激光束于每微米2至8个脉冲的脉冲封装中。各该第一脉冲伴随着至少一对应的第二脉冲,且该第二脉冲具有一较短的时间间隔的延迟,其中该时间间隔略高于该主基层材料的电子声子弛豫时间,在一较佳的例子中,该第二脉冲延迟了该初始光束的脉冲重复周期的一半,举例而言,设定为200千赫(kHz)的频率。在其他的例子中,该时间间隔可选择为介于10到1000皮秒。射至该切割表面上的第一脉冲激光束用以启动并维持表面烧蚀和热能积聚(通过储蓄额外的热能,即“预热”),其中该表面可对应至功能层3或堆叠在主基层的层状***。另外,该第一脉冲使所述基层的表面产生了些微的物理变化,即形成了断裂或裂缝的前驱构造4,借此减少由应力导致的机械故障的损伤临界值。由于该脉冲持续时间为飞秒的规模,且该些第二脉冲抵达的时间间隔相当于碳化硅的电子声子弛豫时间,故局部形成至少一热影响区块;对于在该热影响区块范围内随之而来的脉冲烧蚀和能量吸收将变得更有效率。各该连续的第一脉冲所对应随后的第二脉冲与所述热影响区块重叠,借此,一斜率大的热梯度及快速非均匀冷却使得大量的基板材料产生高度张力以及一损坏结构5,其中该损坏结构5为一机械故障的延伸系列,并自该基层的表面延伸。值得注意的是,该第二脉冲不仅将热能积蓄在该热影响区块,还能维持该基板表面和涂层3的烧蚀过程。另外,由于此种处理方法的原理基于一个以上脉冲所产生的累积效应,一第一脉冲可作为后续第一脉冲的对应第二脉冲。本案方法过程如图1所示,揭示了连续导入的脉冲光束的传递脉冲对2、涂层3、半导体基板6、裂缝前驱构造4、约略的断裂生成底边线5、第一及第二脉冲的脉冲对所产生的单张力轮廓7(脉冲对的轮廓对),以及工件移动方向1。图2则显示该碳化硅基板于吸收第一及第二脉冲的单一脉冲对后所产生的张力。在最佳状况下,上述加工脉冲能量介于4至50μJ。
在另一实施例中,所述至少一第一及第二脉冲激光束被引导通过光束操纵组件中的光束操纵元件,其中该至少一脉冲激光束的参数可被修正,例如波长、脉冲持续时间、脉冲的时间封包形状或光谱、光束差异、空间光谱、时间或空间相位调整,或其他类似的参数。
在再一实施例中,所述第一及第二脉冲激光束的参数皆相同。
在更一实施例中,该工件包含一基层及两个以上具有不同材料的涂层。
在另一实施例中,该第一脉冲激光束聚焦于该第一表面上或其下方(汇聚点或聚焦点位于或形成于该工件的第一表面的下方)以烧蚀工件的该些涂层,使得该涂层厚度下降,抑或完全将该涂层去除,使所述至少一硬脆的基层不被覆盖。借此,一热影响区块将产生,且该第二脉冲激光束汇聚于该第一表面下方。
在再一实施例中,该第二脉冲激光束被修正为,在聚焦至该预定的划刻面之前提高发散,使得其聚焦点位于该第一脉冲激光束的聚焦点(或光束发散点)下方,且与该热影响区块重叠,其中该热影响区块由于多光子吸收而增加热能的积聚,因为该多光子吸收的截面系数也使材料的温度增加。
在更一实施例中,该工件的至少一基层的材质为氮化镓(Gallium Nitride)。
在另一实施例中,该工件包含一基层及两个以上具有不同材质的涂层,且更产生多个加工光束,以逐渐去除该些涂层并逐渐生成热累积区。
在再一实施例中,该工件具有一非平面的表面。另外,在加工过程中,在该工件的第一表面与该聚光装置之间的固定距离经由主动的方式维持。
为使本发明所属技术领域中具有通常知识者更理解本案技术,图3及图4进一步揭示本案技术特征。图3揭示一本发明所揭露方法所需的最简易的***,其中一脉冲激光束放射源8用以射出该初始光束11,而该初始光束11被引导至该光束操纵组件9以生成分散的脉冲激光束,且一迟滞形成于该第一及第二脉冲激光束之间。当至少一该第一脉冲激光束与至少一该第二脉冲激光束被引导出该光束操纵组件9后,随即被引导至一聚光装置10。该聚光装置10可以是一球面透镜、一非球面透镜、一物镜,或一曲面的聚焦镜。值得注意的是,该光束操纵组件9中的初始光束须被分散而生成两个以上的脉冲激光束,即所述第一及第二脉冲激光束;其中包含于该至少一第一脉冲激光束及至少一第二脉冲激光束内的加工脉冲光束以成对或成束的脉冲而产生。此外,本案方法中的加工光束12或/及该工件13必须以相反于彼此的方向移动,欲达成此动作的最简单的方式将该工件13固定于一电动线性平移台复合体14上进行加工,或直接取代该加工***,抑或是使用一检流计扫描仪等。
图4则揭示本案该光束操纵组件9的选择。该初始光束11在一脉冲光束操纵组件9被分散,其中该脉冲光束操纵组件9包含两个光分束器15以及一延迟光路,该延迟光路以至少两个可移式镜面16所组成。为本案所属领域所已知的是,该可移式镜面16可以一可移式屋顶型反射器或电介质棱镜代替;其他选项则包含,使用电光调节器、声光调节器、绕射光学元件,或以双折射材料制成的元件,分离及延迟所述脉冲光束,而不须将该些脉冲光束自该初始光束11的主光轴移开。此外,至少一光束操纵元件或光束操纵装置17可被置于各个光路之中,用以改变该脉冲光束的参数,例如波长、脉冲宽度、时间封包、空间强度分部,或至少一分离脉冲光束的相位调整、分散及偏振。该光束操纵元件17可以是用以将该光束分散而形成多个平行光束的一绕射元件、一位相板、非线性倍频晶体、聚焦或散焦镜头、液晶相位调节器、自适应光学元件,或任何用以改变所述至少一脉冲光束的空间、时间或光谱性质的其他元件。另外,该光束操纵组件与该聚光装置可一体成型为单一装置。
为更清楚揭露本发明,提供以下实施例予以说明。然而,该实施例及当中提及的参数仅为了便于说明,而并不以此为限。该些参数可在一广泛的范围中变化,而呈现相似或相异的结果,但即使如此,该切割过程的主要概念仍然不会改变。
实施例一
该工件基板的材料为碳化硅(4H-SiC),并以金涂覆而具有一单一金属涂层。该第一及第二脉冲激光束平均结合后的能量为10微焦耳(microjoules)。该激光束放射源可射出一脉冲激光束的一飞秒激光器,其中该脉冲激光束波长为1030nm,脉冲宽度低于300fs(半峰全宽FWHM为1.41),且具有一200kHz的输出频率。该第一及第二脉冲激光束通过非线性二次谐波产生的晶体被改变为515nm的波长。该第一及第二脉冲激光束之间被设定为有一100ps的迟滞。该聚焦单元与一0.15NA的聚焦物镜一同排列为一聚光装置,并具有一15mm的聚焦长度。该工件的线性平移速度被设定为100mm/s。本实施例切割方法的结果呈现于图5及图6。
权利要求书(按照条约第19条的修改)
1.一种半导体工件的激光图案化方法,其中该工件包含至少一基层,而该基层由一硬脆的材料制成,其中该材料具有介于2.5至4eV的能带隙;该工件具有相互平行的一第一表面与一第二表面,且该方法使用一脉冲激光束放射源,以射出至少两个脉冲激光束,即第一脉冲激光束及一第二脉冲激光束;其中该工件或该脉冲激光束沿着一预期切割轨迹相对地移动,其特征在于:
一初始光束通过一光束操纵组件被引导,其中该光束操纵组件用以分离自该脉冲激光束放射源射出的该初始光束,其中该初始光束被分离成至少一该第一脉冲激光束及至少一该第二脉冲激光束,其中该第一脉冲激光束具有一第一脉冲,而该第二脉冲激光束具有一第二脉冲;随后该第一脉冲激光束及该第二脉冲激光束通过一聚光装置传送至该工件中预定的划刻面至少一预期切割轨迹,其中该第一及第二脉冲激光束在每微米2至8个脉冲的脉冲封装中传送至该工件中预定的划刻面;且该第二脉冲距离该第一脉冲具有一时间间隔的延迟,而该时间间隔略高于所述基层之材料的电子声子弛豫时间;射至该工件上的第一脉冲激光束于至少一热影响区块激活并维持表面烧蚀和热能积聚,且对应的第二脉冲激光束与所述热影响区块重叠;借此,一热梯度及快速非均匀冷却产生了多个自所述基层表面延伸,及沿该划刻面深入该基层的裂纹及断裂。
2.如权利要求1所述的半导体工件的激光图案化方法,其中该至少一该第一脉冲激光束及至少一该第二脉冲激光束在该光束操纵组件内被修饰,其中所述修饰包含:
改变该些脉冲激光束的至少一参数,其中该参数包含波长、脉冲持续时间、脉冲的时间封包形状或光谱、光束差异,及空间光谱。
3.如权利要求1所述的半导体工件的激光图案化方法,其中该些脉冲激光束的参数被设定为皆相同。
4.如权利要求1所述的半导体工件的激光图案化方法,其中所基层的该第一表面包含有以不同材质组成的至少一涂层。
5.如权利要求1所述的半导体工件的激光图案化方法,其中该脉冲激光束放射源射出的脉冲激光束,具有介于紫外线至红外线波长范围的波长,且其脉冲持续时间介于200至1000飞秒之间。
6.如权利要求1和5所述的半导体工件的激光图案化方法,其中该至少一第一及第二脉冲激光束的脉冲能量介于4至50μJ之间。
7.如权利要求1,以及2至6中至少一者所述的半导体工件的激光图案化方法,其中该第一脉冲激光束聚焦于该工件的第一表面上或其下方,以烧蚀该至少一涂层,其中该涂层厚度下降抑或完全被去除,使所述至少一硬脆的基层不被覆盖,借此产生该热影响区块。
8.如权利要求1,以及2至6中至少一者所述的半导体工件的激光图案化方法,其中该第二脉冲激光束经修饰为,在聚焦至该预定的划刻面之前提高发散,使得该第二脉冲激光束的聚焦点位于该第一脉冲激光束的聚焦点下方,并与该热影响区块重叠,其中该热影响区块由于在大量基层的多光子吸收而增加热能的积聚。
9.如权利要求1,以及2至7中至少一者所述的半导体工件的激光图案化方法,其中该工件的一基层的材料由碳化硅或氮化镓所制成。
Claims (9)
1.一种半导体工件的激光图案化方法,其中该工件包含至少一基层,而该基层由一硬脆的材料制成,其中该材料具有介于2.5至4eV的能带隙;该工件具有相互平行的一第一表面与一第二表面,且该方法使用一脉冲激光束放射源,以射出至少两个脉冲激光束,即第一脉冲激光束及一第二脉冲激光束;其中该工件或该脉冲激光束沿着一预期切割轨迹相对地移动,其特征在于:
一初始光束通过一光束操纵组件被引导,其中该光束操纵组件用以分离自该脉冲激光束放射源射出的该初始光束,其中该初始光束被分离成至少一该第一脉冲激光束及至少一该第二脉冲激光束,其中该第一脉冲激光束具有一第一脉冲,而该第二脉冲激光束具有一第二脉冲;随后该第一脉冲激光束及该第二脉冲激光束通过一聚光装置传送至该工件中预定的划刻面至少一预期切割轨迹,其中该第一及第二脉冲激光束在每微米2至8个脉冲的脉冲封装中传送至该工件中预定的划刻面;各该第一脉冲伴随着至少一对应的第二脉冲,且具有一延迟时间从10到1000皮秒;射至该工件上的第一脉冲激光束于至少一热影响区块激活并维持表面烧蚀和热能积聚,且对应的第二脉冲激光束与所述热影响区块重叠;借此,一热梯度及快速非均匀冷却产生了多个自所述基层表面延伸,及沿该划刻面深入该基层的裂纹及断裂。
2.如权利要求1所述的半导体工件的激光图案化方法,其中该至少一该第一脉冲激光束及至少一该第二脉冲激光束在该光束操纵组件内被修饰,其中所述修饰包含:
改变该些脉冲激光束的至少一参数,其中该参数包含波长、脉冲持续时间、脉冲的时间封包形状或光谱、光束差异,及空间光谱。
3.如权利要求1所述的半导体工件的激光图案化方法,其中该些脉冲激光束的参数被设定为皆相同。
4.如权利要求1所述的半导体工件的激光图案化方法,其中所基层的该第一表面包含有以不同材质组成的至少一涂层。
5.如权利要求1所述的半导体工件的激光图案化方法,其中该脉冲激光束放射源射出的脉冲激光束,具有介于紫外线至红外线波长范围的波长,且其脉冲持续时间介于200至1000飞秒之间。
6.如权利要求1和5所述的半导体工件的激光图案化方法,其中该至少一第一及第二脉冲激光束的脉冲能量介于4至50μJ之间。
7.如权利要求1,以及2至6中至少一者所述的半导体工件的激光图案化方法,其中该第一脉冲激光束聚焦于该工件的第一表面上或其下方,以烧蚀该至少一涂层,其中该涂层厚度下降抑或完全被去除,使所述至少一硬脆的基层不被覆盖,借此产生该热影响区块。
8.如权利要求1,以及2至6中至少一者所述的半导体工件的激光图案化方法,其中该第二脉冲激光束经修饰为,在聚焦至该预定的划刻面之前提高发散,使得该第二脉冲激光束的聚焦点位于该第一脉冲激光束的聚焦点下方,并与该热影响区块重叠,其中该热影响区块由于在大量基层的多光子吸收而增加热能的积聚。
9.如权利要求1,以及2至7中至少一者所述的半导体工件的激光图案化方法,其中该工件的一基层的材料由碳化硅或氮化镓所制成。
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