CN108445302A - A kind of highly sensitive near field resonating electric field test probe of load T-type electrode - Google Patents
A kind of highly sensitive near field resonating electric field test probe of load T-type electrode Download PDFInfo
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- CN108445302A CN108445302A CN201810105741.4A CN201810105741A CN108445302A CN 108445302 A CN108445302 A CN 108445302A CN 201810105741 A CN201810105741 A CN 201810105741A CN 108445302 A CN108445302 A CN 108445302A
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- electric field
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
- G01R29/0878—Sensors; antennas; probes; detectors
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Abstract
A kind of highly sensitive near field resonating electric field test probe of load T-type electrode of the present invention, it includes at least Minisize coaxial connector (SMA connectors) and electric field probe ontology；The electric field probe ontology includes detection tip, resonator, impedance transformer, signal via and the co-planar waveguide CB CPW with metal backing for loading T-type electrode；The design and making of the electric field probe ontology are based on printing board PCB technique, using four-sheet structure.Test probe of the present invention has the characteristics that highly sensitive, miniaturization and high score rate, can efficiently extract useful electric field signal in the faint radiation level environment of CPS frequency bands.PCB processing technologys are used, production cost is reduced, shorten the R＆D cycle.Simultaneously more effectively highly sensitive detection technique device is provided for the positioning of the interference source of GPS narrow radio frequency electronic systems and tracking.
Description
【Technical field】
It is faint for narrowband the present invention relates to a kind of highly sensitive near field resonating electric field test probe of load T-type electrode
The extraction of electric field signal belongs to electromagnetic exposure and electromagnetic field near-field test field.
【Background technology】
Due to the increase of working frequency, the promotion of printed circuit board wiring density, digital signal low and high level is quickly cut
It changes, the increase of data bus speed, produces some undesirable electromagnetic field radiations.These radiation are by cable, cabling or collection
It is picked up at the pin of circuit, is coupled in electronic device or electronic system, produces serious electromagnetic compatibility problem so that Gao Xing
The radio frequency electric system design of energy is faced with the difficulty of completely new challenge and sternness.In design of electronic products, electromagnetic compatibility
Design just becomes more and more important technology.International standard, as IEC61967 and IEC62132 assesses the radiation of integrated circuit
Standardization Order is done.As the Primary Component in near-field test, near-field test probe can capture electric field and magnetic field radiation.It is right
For being operated in the radio frequency system of narrowband, radiation in special frequency band is the focal point of tester, wideband at this time
Band near-field test probe, it is clear that lost its and relied on the advantage that is widely used of broadband frequency band, be no longer best choosing
It selects.WIFI and GPS system narrow for working band, electromagnetic radiation is low extracts useful electricity how in high-noise environment
The technical issues of magnetic radiation, is more and more urgent.To solve above-mentioned new technical barrier, meet the production of electronics industry radio frequency electric system
The design requirement of product, for the electromagnetic radiation monitoring of the narrowbands GPS, the present invention has developed a kind of high sensitivity of load T-type electrode
Near field resonating electric field test probe.
【Invention content】
In order to solve the detection technique problem of above-mentioned GPS narrow radio frequencies signal low electromagnetic, the present invention devises one kind
Load the highly sensitive near field resonating electric field test probe of T-type electrode, in order to the effectively narrow radio frequencies system such as extraction GPS
The electromagnetic signal of middle radiation promotes the performance of electronic system.
In order to meet above-mentioned purpose, the solution of the present invention is as follows：
A kind of highly sensitive near field resonating electric field test probe of load T-type electrode, it is connected including at least mini-coax
Device (SMA connectors) and electric field probe ontology；
The super sub-miniature A connector that the SMA connector model South West USAs Microwave Corporation develops, concrete model 292-
04A-6；
The electric field probe ontology includes the detection tip for loading T-type electrode, resonator, impedance transformer, signal mistake
Hole and co-planar waveguide (Conductor-backed coplanar waveguide, CB-CPW) with metal backing；
The design and making of the electric field probe ontology, based on printed circuit board (Printed Circuit Board,
PCB) technique, using four-sheet structure.
Top layer shielding layer plane is located at first layer, and bottom mask plane is located at the 4th layer；The inspection of the load T-type electrode
It surveys tip, resonator and impedance transformer and is located at third layer；The detection tip for loading T-type electrode shields layer plane and bottom than top layer
Layer mask plane extends 3mm, and effective path of integration is provided for electric field signal；The detection tip of load T-type electrode can enhance
Coupling between electric field probe and measured piece；The detection tip of resonator and load T-type electrode is cascaded, and resonator can be set
Count specific resonance frequency point；Impedance transformer is cascaded with resonator, and high input impedance may be implemented to low-impedance conversion, realize
With the matching of measuring instrument port Impedance so that near-field test probe has the transmission gain of bigger.
The SMA connectors are contacted with CB-CPW laminated types, and the signal that near field electric field probe is tested is sent to survey
Measuring appratus；The center conductor of CB-CPW is located in the rectangular slot opened of top layer shielding layer plane, prevent CB-CPW center conductors with
Top layer shielding layer plane is connected；The signal via shields layer plane through top layer shielding layer plane and bottom；Top layer screen
It covers layer plane and bottom shielding layer plane all outputs anti-pad, prevent signal via from shielding layer plane and bottom shielded layer with top layer
Signal via short circuit caused by plane connection；Signal via connects impedance transformer with CB-CPW center conductors；CB-CPW
The characteristic impedance of center conductor is 50 Ω, and impedance control plane is positioned at 1 layer plane of the centre of the second layer.
A kind of advantageous effect of highly sensitive near field resonating electric field test probe of load T-type electrode of the present invention is：
A kind of highly sensitive near field resonating electric field test probe for load T-type electrode that the present invention is invented has highly sensitive
The characteristics of degree, miniaturization and high score rate, useful electricity can be efficiently extracted in the faint radiation level environment of CPS frequency bands
Field signal；A kind of highly sensitive near field resonating electric field test probe of load T-type electrode provided by the present invention, uses maturation
PCB processing technologys, reduce production cost, shorten the R＆D cycle of near field electrical field test probe；It is provided by the present invention
A method of the highly sensitive near field resonating electric field test probe of load T-type electrode illustrates resonance probe design, and engineering is set
Meter, research staff are easy to grasp the inventive method of the near field electrical field test probe of the present invention, and engineering design, research staff can roots
It needs according to practical engineering project, in conjunction with the corresponding structure of present invention modification near field electrical field test probe, parameter etc., obtains different humorous
Shake frequency point, higher sensitivity gain performance near field electrical field test probe.
A kind of highly sensitive near field resonating electric field test probe of load T-type electrode provided by the present invention, effectively solves
It has determined in the test of GPS narrow radio frequency electronic system Low emissivity levels, the technical barrier of useful electric field signal capture can succeed
It is that the interference source of GPS narrow radio frequency electronic systems is fixed applied to the acquisition of transient voltage signals in GPS narrow radio frequency electronic systems
Position and tracking provide more effectively highly sensitive detection technique device.A kind of load T-type electrode provided by the present invention
Highly sensitive near field resonating electric field test probe is also the extraction of weak interference signal in other narrow radio frequency electronic systems simultaneously
And it develops high performance near-field test probe and provides mentality of designing and method of production.
【Description of the drawings】
Fig. 1 is a kind of PCB stacked graphs of the highly sensitive near field resonating electric field test probe ontology of load T-type electrode.
Fig. 2 is a kind of overall structure vertical view of the highly sensitive near field resonating electric field test probe of load T-type electrode.
Fig. 3 (a) is a kind of vertical view of the highly sensitive near field resonating electric field test probe ontology first layer of load T-type electrode
Figure.
Fig. 3 (b) is a kind of vertical view of the highly sensitive near field resonating electric field test probe ontology second layer of load T-type electrode
Figure.
Fig. 3 (c) is a kind of vertical view of the highly sensitive near field resonating electric field test probe ontology third layer of load T-type electrode
Figure.
Fig. 3 (d) is a kind of vertical view of the 4th layer of the highly sensitive near field resonating electric field test probe ontology of load T-type electrode
Figure.
Fig. 4 is a kind of resonance characteristic test device of the highly sensitive near field resonating electric field test probe of load T-type electrode
Figure.
Emulation and test S of the Fig. 5 for a kind of highly sensitive near field resonating electric field test probe of load T-type electrode12Curve.
Figure label is described as follows：
1-1：SMA connectors, 1-2：CB-CPW center conductors, 1-3：Impedance transformer,
1-4：Resonator, 1-5：Load the detection tip of T-type electrode, 1-6：Top layer shields layer plane,
1-7：Intermediate 1 layer plane, 1-8：Bottom shields layer plane,
2-1：Vector network analyzer, 2-2：3D manipulators, 2-3：Power drive line,
2-4：Power driving controller, 2-5：RS232 serial port data lines, 2-6：Computer,
2-7：General purpose interface bus GPIB, 2-8：Calibrate microstrip line, 2-9：Coaxial cable.
【Specific implementation mode】
In conjunction with attached drawing, it is each to will be evident from a kind of highly sensitive near field resonating electric field test probe of load T-type electrode
Partial structure, position relationship and function.
Fig. 1 illustrates a kind of highly sensitive near field resonating electric field test probe of load T-type electrode of the present invention
Four layers of PCB laminated construction.The highly sensitive near field resonating electric field that Fig. 2 illustrates a kind of load T-type electrode of the present invention is surveyed
The overall top view of probe header.Fig. 3 from left to right, illustrates a kind of the highly sensitive of load T-type electrode of the present invention successively
Spend the first layer (Fig. 3 (a)) of near field resonating electric field test probe, the second layer (Fig. 3 (b)), third layer (Fig. 3 (c)) and the 4th layer
(Fig. 3 (d)).
A kind of highly sensitive near field resonating electric field test probe of load T-type electrode of the present invention includes SMA connections
Device 1-1 and electric field probe ontology；The design and processing of electric field probe ontology, the four-layer circuit board structure based on PCB technology.Top layer
Shielding layer plane 1-6 is located at first layer, and the thickness that top layer shields layer plane 1-6 is 1.5oz.CB-CPW center conductors 1-2 is located at
In the rectangular slot that top layer shielding layer plane 1-6 is opened.The characteristic impedance of CB-CPW center conductors 1-2 is 50 Ω, characteristic impedance control
Reference planes processed are positioned at 1 layer plane 1-7 of the centre of third layer, thickness 0.5oz.Load the detection tip 1- of T-type electrode
5, resonator 1-4, impedance transformer 1-3 are located at 2 layers intermediate, cascade successively from bottom to up.Load the detection tip 1- of T-type electrode
5 thickness is 0.5oz, covers plane 1-6 than top layer screen layer and bottom shielding layer plane 1-8 extends 3mm.Resonator 1-4 is by parallel
Plate capacitor and plane annular inductance are constituted, and the resonance of specific frequency point may be implemented.Impedance transformer 1-3 can be by resonator 1-
4 high input impedances switch to the impedance to match with measuring instrument, to realize the transmission of maximum power.In the CB-CPW of top layer
Heart conductor 1-2 is connected with positioned at intermediate 2 layers of impedance transformer 1-3 by a signal via.By the inspection of load T-type electrode
It surveys tip 1-5 and incudes the electric current detected followed by resonator 1-4, impedance transformer 1-3, signal via, the centers CB-CPW
Conductor 1-2, SMA connector 1-1 is until measuring instrument.
Calibration test is carried out to the highly sensitive near field resonating electric field test probe of the load T-type electrode of designed processing.
Calibration test test device in the present embodiment is with reference to figure 4.In order to ensure that calibration test result surveys continuity and consistency, this reality
The calibration test process applied in example carries out in microwave dark room.The calibration microstrip line 2-8 of 50 Ω terminates (terminated
With the coaxial cable 2-9 of) the broadband test load of 50 Ω, shielding by vector network analyzer 2-1 and calibrates microstrip line 2-8 phases
Connection, vector network analyzer 2-1 can not only be used as driving source, but also can be used as receiver.SMA connectors 1-1 is visited with electric field
Head ontology connection, SMA connectors 1-1 shell () press and contact with 1 layer plane 1-7 of centre, bottom mask plane 1-8, SMA
The pin needle of connector 1-1 is contacted with the 1-2 pressings of CPW center conductors；Electric field probe ontology by SMA connectors 1-1, shielding
The electric field signal detected is sent to vector network analyzer 2-1 by coaxial cable 2-9.
3D manipulators 2-2, power driving controller 2-4 and computer 2-6 constitute near field electrical field test probe 3D positioning
Kinematic system.3D manipulators 2-2 can drive electrical field test probe near field accurately to be moved freely through in 3 dimension spaces；Power drives
Movement controller 2-4 and 3D manipulators 2-2 is interconnected by power drive line 2-3；Computer 2-6 and power driving controller 2-4 it
Between pass through RS232 serial ports receipt lines 2-5 communication；PC control software, the movement instruction of transmission have been installed in computer 2-6
Be transmitted to power driving controller 2-4 by serial port data line 2-5, power driving controller 2-4 according to the command information received,
It exports powerful fortune control control signal and gives 3D manipulators 2-2.Vector network analyzer 2-1 passes through general purpose interface bus GPIB
2-7 is communicated with computer, and vector network analyzer 2-1 can be arranged in computer 1 by general purpose interface bus GPIB 2-7, including
Test frequency range, resolution bandwidth, video bandwidth etc..In the present embodiment, the signal of vector network analysis 2-1 is Keysight
E5071C 9kHz~20GHz, test frequency range is from 1.1GHz to 1.9GHz, resolution bandwidth 30kHz, and video bandwidth is " certainly
It is dynamic " mode, number of scan points 1001.
In the present embodiment, electrical field test probe near field is placed at calibration microstrip line 2-8 overcentres 2mm, and port 2 is made
To drive port, port 1 to be used as receiving port, the transmission coefficient from port 2 to port 1, i.e. S are tested12.In test structure,
Only focus on S12Amplitude, unit be dB forms.As shown in figure 5, emulation | S12| curve and test | S12| curves obtain very
It is good, 1.57GHz frequency points, | S12| reach maximum value, than there is the transmission gain of bigger at other frequency points.From | S12| from the point of view of, the present invention
A kind of highly sensitive near field resonating electric field test probe for the load T-type electrode being related to has higher sensitivity, is suitable for narrowband
The electromagnetic interference of radio frequency system Low emissivity level detects.
It should be pointed out that technological means disclosed by the invention, design method are not limited only to the present invention, it is also applied for simultaneously
The other sides derived in conjunction with design philosophy of the present invention, inventive method, technological means and technical characteristic of the present invention
Case, inventive method, invention product, therefore these other schemes for being derived, inventive method, invention product are regarded as this hair
The range of bright protection.
Claims (7)
1. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode, it includes at least Minisize coaxial connector
And electric field probe ontology, it is characterised in that：
The Minisize coaxial connector is SMA connectors, the super sub-miniature A connector that model South West USA Microwave Corporation develops；
The electric field probe ontology include load the detection tip of T-type electrode, resonator, impedance transformer, signal via and
Co-planar waveguide CB-CPW with metal backing；
The design and making of the electric field probe ontology are based on printing board PCB technique, using four-sheet structure；
Top layer shielding layer plane is located at first layer, and bottom mask plane is located at the 4th layer；The detection point of the load T-type electrode
End, resonator and impedance transformer are located at third layer；
The detection tip of the load T-type electrode can enhance the coupling between electric field probe and measured piece；Resonator and load T-type
The detection tip of electrode is cascaded, and resonator can design resonance frequency point；Impedance transformer is cascaded with resonator, realizes high input
Impedance realizes the matching with measuring instrument port Impedance to low-impedance conversion, so that near-field test probe has transmission to increase
Benefit；
The SMA connectors are contacted with CB-CPW laminated types, and the signal that near field electric field probe is tested is sent to measuring instrument；
The center conductor of CB-CPW is located in the rectangular slot that top layer shielding layer plane is opened, and prevents CB-CPW center conductors from being shielded with top layer
Layer plane is connected；Signal via shields layer plane through top layer shielding layer plane and bottom；Top layer shields layer plane and bottom
Shielding layer plane all outputs anti-pad, prevents that signal via and top layer from shielding layer plane and bottom shields caused by layer plane connect
Signal via short circuit；Signal via connects impedance transformer with CB-CPW center conductors.
2. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode according to claim 1, feature
It is：The SMA connectors concrete model is 292-04A-6.
3. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode according to claim 1, feature
It is：The detection tip of the load T-type electrode shields layer plane than top layer and bottom mask plane extends 3mm, believes for electric field
Number provide effective path of integration.
4. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode according to claim 1, feature
It is：The characteristic impedance of CB-CPW center conductors is 50 Ω.
5. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode according to claim 4, feature
It is：The control plane of characteristic impedance is located at 1 layer plane of centre of third layer, thickness 0.5oz.
6. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode according to claim 1, feature
It is：The thickness that top layer shields layer plane is 1.5oz.
7. a kind of highly sensitive near field resonating electric field test probe of load T-type electrode according to claim 1, feature
It is：The thickness for loading the detection tip of T-type electrode is 0.5oz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810105741.4A CN108445302B (en) | 2018-02-02 | 2018-02-02 | High-sensitivity near-field resonance electric field test probe loaded with T-shaped electrode |
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| CN201810105741.4A CN108445302B (en) | 2018-02-02 | 2018-02-02 | High-sensitivity near-field resonance electric field test probe loaded with T-shaped electrode |
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| CN108445302B CN108445302B (en) | 2021-01-19 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109521374A (en) * | 2018-10-18 | 2019-03-26 | 北京航空航天大学 | It is embedded in integrated balun and loads the tangential electric field probe of resonance of modified dipole |
| CN109884412A (en) * | 2019-01-28 | 2019-06-14 | 北京航空航天大学 | A kind of ultra wide band electrically Field probe using U-shaped structure |
| CN110470917A (en) * | 2019-07-22 | 2019-11-19 | 西安电子科技大学 | A kind of high temperature resistant electric-field probe applied to high temperature and high speed plasma internal electric field distribution measuring |
| CN110531161A (en) * | 2019-07-29 | 2019-12-03 | 北京航空航天大学 | A kind of contactless online testing device of printed circuit board each position input impedance |
| CN110568386A (en) * | 2019-07-22 | 2019-12-13 | 西安电子科技大学 | High-temperature-resistant magnetic field probe applied to high-temperature high-speed plasma internal magnetic field distribution measurement |
| CN110824261A (en) * | 2019-10-21 | 2020-02-21 | 北京航空航天大学 | Active magnetic field probe adopting hybrid bias filter network |
| CN113238098A (en) * | 2021-05-12 | 2021-08-10 | 厦门大学 | Wide-frequency electric field probe capable of simultaneously measuring double-component electric field |
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| CN105720336A (en) * | 2016-04-08 | 2016-06-29 | 北京航空航天大学 | Resonance suppression structure of broadband near-field magnetic field probe, and construction method of resonance suppression structure |
| CN105891611A (en) * | 2016-04-08 | 2016-08-24 | 北京航空航天大学 | Broadband miniature near-field electric field test probe |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109521374A (en) * | 2018-10-18 | 2019-03-26 | 北京航空航天大学 | It is embedded in integrated balun and loads the tangential electric field probe of resonance of modified dipole |
| CN109521374B (en) * | 2018-10-18 | 2020-10-27 | 北京航空航天大学 | Resonance tangential electric field probe embedded with integrated balun and loaded improved dipole |
| CN109884412A (en) * | 2019-01-28 | 2019-06-14 | 北京航空航天大学 | A kind of ultra wide band electrically Field probe using U-shaped structure |
| CN110470917A (en) * | 2019-07-22 | 2019-11-19 | 西安电子科技大学 | A kind of high temperature resistant electric-field probe applied to high temperature and high speed plasma internal electric field distribution measuring |
| CN110568386A (en) * | 2019-07-22 | 2019-12-13 | 西安电子科技大学 | High-temperature-resistant magnetic field probe applied to high-temperature high-speed plasma internal magnetic field distribution measurement |
| CN110568386B (en) * | 2019-07-22 | 2022-01-25 | 西安电子科技大学 | High-temperature-resistant magnetic field probe for measuring magnetic field distribution in high-temperature high-speed plasma |
| CN110531161A (en) * | 2019-07-29 | 2019-12-03 | 北京航空航天大学 | A kind of contactless online testing device of printed circuit board each position input impedance |
| CN110531161B (en) * | 2019-07-29 | 2020-10-23 | 北京航空航天大学 | Non-contact type on-line testing device for input impedance of each position of printed circuit board |
| CN110824261A (en) * | 2019-10-21 | 2020-02-21 | 北京航空航天大学 | Active magnetic field probe adopting hybrid bias filter network |
| CN113238098A (en) * | 2021-05-12 | 2021-08-10 | 厦门大学 | Wide-frequency electric field probe capable of simultaneously measuring double-component electric field |
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