CN108439328A - A kind of inflating thin film method preparing flexible film substrate micro nano structure - Google Patents
A kind of inflating thin film method preparing flexible film substrate micro nano structure Download PDFInfo
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- CN108439328A CN108439328A CN201810199159.9A CN201810199159A CN108439328A CN 108439328 A CN108439328 A CN 108439328A CN 201810199159 A CN201810199159 A CN 201810199159A CN 108439328 A CN108439328 A CN 108439328A
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- Prior art keywords
- film substrate
- flexible film
- nano structure
- micro nano
- photoresist
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0033—Manufacture or treatment of substrate-free structures, i.e. not connected to any support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
The invention discloses a kind of inflating thin film method preparing flexible film substrate micro nano structure, flexible film substrate is clamped using upper and lower two fixtures first by the present invention；Then backboard with air-filled pore is fixed on to the lower section of lower fixture；During contact exposure, the photoresist on flexible film substrate and its surface and mask gapless are fitted closely using the gas being passed through, to obtain high-precision micro nano structure.Compared with existing direct contact type exposes and prepares flexible film substrate micro nano structure technology, have film substrate be bonded with mask closely, micro nano structure line width and depth uniformity is good, process repeatability and high reliability.
Description
Technical field
The invention belongs to micro-nano processing technique fields, and in particular to a kind of flexible film substrate micro nano structure of preparing
Inflating thin film method.
Background technology
Flexible thin-film material such as polyimides, polyethylene naphthalate, Triafol T, polyvinyl alcohol, polyethers
Sulfone, polyether-ether-ketone, polyamidoimide, modified cyclic polyolefin etc., with light-weight, bent, chemical inertness is high, optical
Can be good, cost is relatively low the advantages that, therefore be widely applied in micro-nano processing technique field as base material.
But during contact exposure, since flexible film substrate is bonded depositing for the problems such as not close with mask
With flexible film substrate micro nano structure prepared by art methods there is very important linewidth error and depth to miss
Difference cannot be satisfied the high-precision requirement to micro-nano device in scientific research, industry etc..Therefore, develop a kind of fexible film base
On bottom the high-precision preparation method of micro nano structure be there is an urgent need to.
Invention content
For problems of the prior art, to prepare flexible film substrate micro-nano the purpose of the present invention is to propose to a kind of
The new method of structure --- inflating thin film method.Flexible film substrate is clamped using upper and lower two fixtures first by the present invention；Then
Backboard with air-filled pore is fixed on to the lower section of lower fixture；It, will be flexible using the gas being passed through during contact exposure
The photoresist on film substrate and its surface is fitted closely with mask gapless, to obtain high-precision micro nano structure.With
Existing direct contact type exposure prepares flexible film substrate micro nano structure technology and compares, and has flexible film substrate and mask
Version fitting is close, micro nano structure line width and depth uniformity are good, process repeatability and high reliability.
The present invention is implemented by the following technical programs：A kind of inflation preparing flexible film substrate micro nano structure is thin
Film method includes the following steps：
Flexible film substrate is clamped using upper and lower two fixtures, is tightened by step (1)；
Step (2) is evenly coated with a layer photoresist in flexible film substrate；
Step (3), the lower section that the backboard with air-filled pore is fixed on to lower fixture；
Step (4) takes one piece of conventional rigid mask, and it is made to detach certain interval placement with photoresist；
Step (5), by air-filled pore to the seal cavity being made of upper fixture, flexible film substrate, lower fixture and backboard
It is inside filled with the gas of certain volume, the photoresist on flexible film substrate and its surface is made to be fitted closely with mask；
Step (6) carries out optical exposure using contact exposure technology under the irradiation of ultraviolet light, and mask graph is passed
It is delivered on photoresist；
Step (7) obtains the micro nano structure on photoresist by developing process；
Photoetching offset plate figure is transmitted in flexible film substrate by step (8) using dry etching technology.
Wherein, when the upper fixture in the step (1) and lower fixture are fixed together using screw, pin or buckle, tool
There is clamping, tighten film.
Wherein, the flexible film substrate material in the step (1) be polyimides, epoxy resin, polyurethanes,
Dimethyl silicone polymer, polyethylene terephthalate, polyethylene naphthalate, Triafol T, polyvinyl alcohol,
Polyether sulfone, polyether-ether-ketone, polyamidoimide, modified cyclic polyolefin, makrolon or polymethyl methacrylate.
Wherein, the backboard in the step (3) can utilize screw, pin or buckle the lower section for being fixed on lower fixture, and
Backboard and upper fixture, flexible film substrate, lower fixture form the only seal cavity there are one air-filled pore together.
Wherein, the air-filled pore in the step (3) can process the bottom or side in backboard.
Wherein, the gap width between the mask and photoresist in the step (4) is within the scope of 1-200um, to ensure
The air between photoresist and mask in flexible film substrate can be squeezed away completely, and ensure what micro-structure was transmitted
Positional precision.
Wherein, the gas of certain volume, the following table in flexible film substrate are filled in the step (5) into seal cavity
Under the action of the draught head of face, photoresist and the mask gapless on flexible film substrate and its surface fit closely, at this time will be close
The gas for sealing inside cavity locks, then gas pressure intensity remains unchanged in the short time, to ensure flexible film substrate in exposure process
It will not deform upon.
Wherein, the dry etching technology in the step (8) includes physical etchings, chemical etching and physical chemistry etching.
The advantage of the invention is that：
(1), the present invention makes flexible film substrate and its surface by changing flexible film substrate upper and lower surface draught head
Photoresist is fitted closely with mask gapless, uses the line width and depth of flexible film substrate micro nano structure prepared by this method
Spend that uniformity is more preferable, consistency higher.
(2), method is simple, process repeatability and reliability are high, it can be achieved that flexible for inflating thin film proposed by the present invention
In film substrate prepared by the high-precision of micro nano structure, mass, promotes its extensive use in scientific research, production.
In conclusion the present invention solve flexible film substrate during contact exposure be bonded with mask it is untight
Problem provides technical support for application of the high-precision film substrate micro nano structure in research and production.
Description of the drawings
Fig. 1 is the first, second embodiment：Inflating thin film method prepares the technique stream of flexible film substrate micro nano structure
Cheng Tu, wherein：1- upper fixtures, 2- flexible film substrates, fixture under 3-, 4- photoresists, 5- carry the backboard of air-filled pore, 6- masks
Version, 7- gases, 8- ultraviolet lights.
Specific implementation mode
Below in conjunction with the accompanying drawings and the present invention is discussed in detail in specific implementation mode, and protection scope of the present invention should be wanted including right
The full content asked.By following embodiment, the full content of the claims in the present invention can be thus achieved in those skilled in the art.
Embodiment one：
As shown in 1-1 in Figure 1, flexible film substrate 2 is fixed using 3 two aluminum fixtures of upper fixture 1 and lower fixture,
In, flexible film substrate 2 is Kapton substrate；
As shown in 1-2 in Figure 1, the AZ1500 photoresists 4 that thickness is 600nm are uniformly coated on Kapton base
The upper surface at bottom, and in being toasted 60 seconds on 100 DEG C of hot plate；
As shown in 1-3 in Figure 1, the aluminum backboard 5 with air-filled pore is fixed on lower fixture 3；
As shown in 1-4 in Figure 1, one piece of conventional rigid mask 6 is taken to be mounted on the mask folder of contact exposure machine, and profit
It is 40um to adjust the gap between mask 6 and photoresist 4 with the jacking system of contact exposure machine；
As shown in 1-5 in Figure 1, the air 7 of certain volume is filled with into seal cavity by air-filled pore, it is thin in polyimides
Under the action of film upper and lower surface draught head, photoresist 4 and 6 gapless of mask on Kapton and its surface are closely pasted
It closes, at this time locks the gas inside seal cavity, then gas pressure intensity remains unchanged in the short time, to ensure to gather in exposure process
Imide membrane substrate will not deform upon；
As shown in 1-6 in Figure 1, optical exposure is carried out under the irradiation of ultraviolet light 8 using contact exposure technology, by mask
Figure in version 6 is transmitted on photoresist 4；
As shown in 1-7 in Figure 1, the substrate after exposure is put into AZ300MIF developer solutions and is developed, obtain required photoetching
Glue pattern dries up substrate surface, post bake 20 minutes in 120 DEG C of baking oven after ultrapure water using nitrogen；
As shown in 1-8 in Figure 1, photoetching agent pattern is transmitted on Kapton using reactive ion etching technology,
Obtaining surface has the Kapton of high-precision micro nano structure.
Embodiment two：
As shown in 1-1 in Figure 1, flexible film substrate 2 is fixed using 3 two aluminum fixtures of upper fixture 1 and lower fixture,
In, flexible film substrate 2 is Polyethersulfone membranes substrate；
As shown in 1-2 in Figure 1, the AZ3100 photoresists 4 that thickness is 1.2um are uniformly coated on Polyethersulfone membranes substrate
Upper surface, and in being toasted 150 seconds on 100 DEG C of hot plate；
As shown in 1-3 in Figure 1, the aluminum backboard 5 with air-filled pore is fixed on lower fixture 3；
As shown in 1-4 in Figure 1, one piece of conventional rigid mask 6 is taken to be mounted on the mask folder of contact exposure machine, and profit
It is 20um to adjust the gap between mask 6 and photoresist 4 with the jacking system of contact exposure machine；
As shown in 1-5 in Figure 1, the air 7 of certain volume is filled with into seal cavity by air-filled pore, in Polyethersulfone membranes
Under the action of upper and lower surface draught head, photoresist 4 and 6 gapless of mask on Polyethersulfone membranes and its surface fit closely, this
When by inside seal cavity gas lock, then gas pressure intensity remains unchanged in the short time, to ensure polyether sulfone in exposure process
Film will not deform upon；
As shown in 1-6 in Figure 1, optical exposure is carried out under the irradiation of ultraviolet light 8 using contact exposure technology, by mask
Figure in version 6 is transmitted on photoresist 4；
As shown in 1-7 in Figure 1, the substrate after exposure is put into AZ300MIF developer solutions and is developed, obtain required photoetching
Glue pattern 4 dries up substrate surface, post bake 20 minutes in 120 DEG C of baking oven after ultrapure water using nitrogen；
As shown in 1-8 in Figure 1, photoetching agent pattern is transmitted on Polyethersulfone membranes using reactive ion etching technology, is obtained
Obtaining surface has the flexible polyether sulfone film of high-precision micro nano structure.
What the present invention did not elaborated partly belongs to techniques known.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of inflating thin film method preparing flexible film substrate micro nano structure, it is characterised in that：Include the following steps：
Flexible film substrate (2) is clamped using upper fixture (1) and lower fixture (3), is tightened by step (1)；
Step (2) is evenly coated with a layer photoresist (4) in flexible film substrate (2)；
Step (3), the lower section that the backboard (5) with air-filled pore is fixed on to lower fixture (3)；
Step (4) takes one piece of hardmask version (6), and it is made to detach certain interval placement with photoresist (4)；
Step (5), by air-filled pore to being made of upper fixture (1), flexible film substrate (2), lower fixture (3) and backboard (5)
It is filled with the gas (7) of certain volume in seal cavity, makes the photoresist (4) and mask on flexible film substrate (2) and its surface
(6) it fits closely；
Step (6) carries out optical exposure using contact exposure technology under the irradiation of ultraviolet light (8), and mask graph is passed
It is delivered on photoresist (4)；
Step (7) obtains the micro nano structure on photoresist (4) by developing process；
Photoetching offset plate figure is transmitted in flexible film substrate (2) by step (8) using dry etching technology.
2. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
When upper fixture (1) and lower fixture (3) in step (1) are fixed together using screw, pin or buckle, there is clamping, tighten
The effect of film.
3. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Flexible film substrate (2) material in step (1) is polyimides, epoxy resin, polyurethanes, polydimethylsiloxanes
Alkane, polyethylene terephthalate, polyethylene naphthalate, Triafol T, polyvinyl alcohol, polyether sulfone, polyethers
Ether ketone, polyamidoimide, modified cyclic polyolefin, makrolon or polymethyl methacrylate.
4. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Backboard (5) in step (3) can utilize screw, pin or buckle be fixed on the lower sections of lower fixture (3), and backboard (5) and upper
Fixture (1), flexible film substrate (2), lower fixture (3) form the only seal cavity there are one air-filled pore together.
5. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Air-filled pore in step (3) can process the bottom or side in backboard (5).
6. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Gap width between mask (6) in step (4) and photoresist (4) is in 1-200 μ ms, to ensure flexible film substrate
On photoresist and mask between air can be squeezed away completely, and ensure micro-structure transmit positional precision.
7. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
The gas (7) of certain volume is filled in step (5) into seal cavity, in flexible film substrate (2) upper and lower surface draught head
Under effect, photoresist (4) and mask (6) gapless on flexible film substrate (2) and its surface fit closely, at this time will sealing
The gas of inside cavity locks, then gas pressure intensity remains unchanged in the short time, to ensure flexible film substrate in exposure process (2)
It will not deform upon.
8. the inflating thin film method according to claim 1 for preparing flexible film substrate micro nano structure, it is characterised in that：
Dry etching technology in step (8) includes physical etchings, chemical etching and physical chemistry etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810199159.9A CN108439328A (en) | 2018-03-12 | 2018-03-12 | A kind of inflating thin film method preparing flexible film substrate micro nano structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810199159.9A CN108439328A (en) | 2018-03-12 | 2018-03-12 | A kind of inflating thin film method preparing flexible film substrate micro nano structure |
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| CN108439328A true CN108439328A (en) | 2018-08-24 |
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| CN201810199159.9A Pending CN108439328A (en) | 2018-03-12 | 2018-03-12 | A kind of inflating thin film method preparing flexible film substrate micro nano structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111169153A (en) * | 2020-03-06 | 2020-05-19 | 鄂尔多斯市源盛光电有限责任公司 | Printing equipment and frame sealing glue printing device |
| CN111473805A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111620296A (en) * | 2020-05-19 | 2020-09-04 | 中国科学院光电技术研究所 | High-flatness fixing method for adding uniform radial pre-tightening force to flexible film |
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| JPS55144230A (en) * | 1979-04-27 | 1980-11-11 | Fujitsu Ltd | Exposure device |
| JP2008041935A (en) * | 2006-08-07 | 2008-02-21 | Canon Inc | Apparatus and method for controlling close contact of near-field exposure mask |
| CN101375209A (en) * | 2005-08-12 | 2009-02-25 | 惠普开发有限公司 | Contact lithography apparatus, system and method |
| US20140224427A1 (en) * | 2013-02-14 | 2014-08-14 | Fujifilm Corporation | Dry etching apparatus and clamp therefor |
| US20140308768A1 (en) * | 2013-04-16 | 2014-10-16 | Samsung Display Co., Ltd. | Laser-induced thermal imaging apparatus, method of laser-induced thermal imaging, and manufacturing method of organic light-emitting display apparatus using the method |
-
2018
- 2018-03-12 CN CN201810199159.9A patent/CN108439328A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55144230A (en) * | 1979-04-27 | 1980-11-11 | Fujitsu Ltd | Exposure device |
| CN101375209A (en) * | 2005-08-12 | 2009-02-25 | 惠普开发有限公司 | Contact lithography apparatus, system and method |
| JP2008041935A (en) * | 2006-08-07 | 2008-02-21 | Canon Inc | Apparatus and method for controlling close contact of near-field exposure mask |
| US20140224427A1 (en) * | 2013-02-14 | 2014-08-14 | Fujifilm Corporation | Dry etching apparatus and clamp therefor |
| US20140308768A1 (en) * | 2013-04-16 | 2014-10-16 | Samsung Display Co., Ltd. | Laser-induced thermal imaging apparatus, method of laser-induced thermal imaging, and manufacturing method of organic light-emitting display apparatus using the method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111169153A (en) * | 2020-03-06 | 2020-05-19 | 鄂尔多斯市源盛光电有限责任公司 | Printing equipment and frame sealing glue printing device |
| CN111473805A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111473805B (en) * | 2020-04-17 | 2021-09-21 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111620296A (en) * | 2020-05-19 | 2020-09-04 | 中国科学院光电技术研究所 | High-flatness fixing method for adding uniform radial pre-tightening force to flexible film |
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Application publication date: 20180824 |