CN108431943B - 自阻尼末端执行器 - Google Patents
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- 239000012636 effector Substances 0.000 title claims abstract description 74
- 238000013016 damping Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000000116 mitigating effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J15/00—Gripping heads and other end effectors
- B25J15/0014—Gripping heads and other end effectors having fork, comb or plate shaped means for engaging the lower surface on a object to be transported
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- H—ELECTRICITY
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- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J19/00—Accessories fitted to manipulators, e.g. for monitoring, for viewing; Safety devices combined with or specially adapted for use in connection with manipulators
- B25J19/0091—Shock absorbers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract
一种自阻尼末端执行器,包括:基座;指状件,自所述基座延伸且用以支撑衬底;以及阻尼器,与所述指状件相关联,所述阻尼器具有固有频率,所述固有频率处于所述指状件的固有频率的预定公差以内。
Description
技术领域
本发明的实施例大体涉及半导体加工及太阳能电池加工的领域,且更具体来说,涉及用于衬底处理***中的末端执行器。
背景技术
硅衬底用于半导体及太阳能电池的制作中。在制作期间,衬底经历涉及大量机器及加工站的各种制造过程。因此,衬底需要被一或多次自一个机器/站传送至另一机器/站。
机器/站之间的衬底的传送常通过具有支撑结构的机器人(通常被称作“末端执行器”)来执行,以用于以所期望的方式对衬底进行支撑及操控。末端执行器可为由具有自基座延伸的多个指状件或多个尖齿的基座界定的类似手的或类似爪的结构。所述指状件可用以在水平定向上支撑衬底。在操作期间,所述末端执行器可线性地(例如,向前及向后)移动以及旋转地移动,所有上述移动均在同一平面中(例如,x-y轴)。末端执行器也可在沿z轴的第三方向上移动以提供全范围的运动。
当末端执行器移动时,所述末端执行器的指状件可经历显著的加速力,从而导致指状件弯曲且随后根据所述指状件的固有频率而振动。此振动可引起由所述指状件支撑的衬底的非预期的移位或“走步”。这可能对后续加工步骤非常不利,尤其是在期望衬底的精确的布置或精确的定向时。振动可通过降低末端执行器在末端执行器的移动期间的加速度而得到减轻。此类降低会引起衬底经过加工工具的生产量减小,且因此一般是不期望的。
鉴于这些考虑及其他考虑,当前的改良可能是有用的。
发明内容
提供此发明内容是为了以简化的形式介绍下文在具体实施方式中进一步阐述的一系列概念。此发明内容并非旨在识别所声明的主题的关键特征或本质特征,且此发明内容也并非旨在帮助确定所声明的主题的范围。
根据本发明的自阻尼末端执行器的示例性实施例可包括:基座;指状件,自所述基座延伸且用以支撑衬底;以及阻尼器,与所述指状件相关联,所述阻尼器具有固有频率,所述固有频率处于所述指状件的固有频率的预定公差以内。
根据本发明的自阻尼末端执行器的另一示例性实施例可包括:基座;大致平的指状件,自所述基座延伸且用以支撑衬底;以及阻尼器,包括由在所述指状件中形成的切口界定的所述指状件的悬臂部分,所述阻尼器具有固有频率,所述固有频率处于所述指状件的固有频率的预定公差以内。
根据本发明的自阻尼末端执行器的另一示例性实施例可包括:基座;大致平的指状件,自所述基座延伸且用以支撑衬底;以及阻尼器,自所述指状件的边缘延伸且与所述指状件的所述边缘连续,所述阻尼器具有固有频率,所述固有频率处于所述指状件的固有频率的预定公差以内。
附图说明
通过例子,现在将参照附图对根据本发明的装置的各种实施例进行阐述,其中:
图1A是说明根据本发明的末端执行器的示例性实施例的透视图。
图1B是说明图1A中示出的末端执行器的指状件的远侧端部的详细透视图。
图1C是说明图1A中示出的示例性末端执行器与同末端执行器一起使用的多个阻尼器的透视图。
图1D是说明图1C中示出的阻尼器中的一者的详细透视图。
图1E是说明图1A中示出的末端执行器的指状件及对应的阻尼器的剖视透视图。
图2是说明根据本发明的末端执行器的另一示例性实施例的透视图。
图3是说明根据本发明的末端执行器的另一示例性实施例的透视图。
具体实施方式
在下文中,现在将参照附图对根据本发明的自阻尼末端执行器进行更充分地阐述,在附图中呈现出自阻尼末端执行器的某些示例性实施例。自阻尼末端执行器可被实施为诸多不同的形式且不应被视为限制本文中所述的实施例。提供这些实施例是为了使本发明将透彻及完整,并将向所属领域中的技术人员充分传达自阻尼末端执行器的范围。在附图中,通篇中相同的数字指代相同的元件。
本文中所述的自阻尼末端执行器可用于与衬底处理设备(例如离子植入***、沉积***、刻蚀***、光刻***、真空***、或用于加工衬底的其他***)的连接。衬底可为太阳能电池、半导体晶片、发光二极管、或所属领域中的技术人员己知的其他晶片。
图1A是根据本发明的实施例的示例性末端执行器10的俯视透视图。为方便及清晰起见,本文中将使用例如“横向的(lateral)”、“纵向的(longitudinal)”、“顶部(top)”、“底部(bottom)”、“垂直的(vertical)”、“水平的(horizontal)”、“高度(height)”、“宽度(width)”及“长度(length)”等用语来阐述末端执行器10的各种部件的相对位置及相对定向,所有末端执行器10的各种部件的相对位置及相对定向是相对于图1A中出现的末端执行器10的几何及定向而言。所述术语将包括具体提到的词、具体提到的词的派生词、以及相似的外来词。相似的术语将以相似的方式用于阐述本文中公开的后续实施例。
末端执行器10可包括耦合至基座14的多个平行的、横向间隔开的指状件12a、12b、12c、12d。末端执行器10被示出为具有四个指状件12a至12d。作为另外一种选择,末端执行器10可设置有可为适当的以适合具体的应用的更多个或更少个指状件。指状件12a至12d可为管形的且可具有例如圆形、矩形、六边形等各种剖视形状中的任何剖视形状。指状件12a至12d的高度及宽度可自指状件12a-12d的邻近基座14的近侧端部16至定位于距基座14更远的远侧端部18逐渐变小。
多个支撑垫20可以纵向间隔开的关系刚性地贴附至指状件12a至12d。支撑垫20可用来以所属领域中的普通技术人员熟悉的方式支撑衬底的阵列(图中未示出)。参照图1B,说明用于安装支撑垫20的示例性布置的详细图。支撑垫20可例如利用机械紧固件可移除地紧固至鞍座22。鞍座22可例如利用机械紧固件或粘合剂贴附至指状件12a。鞍座22因此可提供用于将支撑垫20可移除地耦合至指状件12a的中间安装结构。
参照图1C,末端执行器10可设置有多个振动阻尼器24a、24b、24c、24d(下文中“阻尼器24a至24d”)。阻尼器24a至24d可用以纵向地***至指状件12a至12d中并刚性地耦合至指状件12a至12d。可设置阻尼器24a至24d以用于在避免指状件12a至12d的大小及重量显著增大的同时及在避免干扰指状件12a至12d的操作的同时阻尼指状件12a至12d的振动,如以下将更详细地阐述。
图1D及图1E分别说明阻尼器24a的详细图及末端执行器10(图1A)的阻尼器24a及对应的指状件12a的剖视图。阻尼器24a及指状件12a可与图1C中示出的阻尼器24b至24d及指状件12b至12d相同。因此,对阻尼器24a及指状件12a的以下阐述也将适用于阻尼器24b至24d及指状件12b至12d。
参照图1D,阻尼器24a可包括细长轴26及耦合至轴26的端部30的安装托架28。在各种实施例中,轴26可为管形的或实心的。安装托架28可设置有具有用于接纳轴26的端部30的孔33的夹紧部分32。夹紧部分32可在端部30周围收紧(例如,通过收紧穿过所述夹紧部分的螺杆及螺栓)以将安装托架28牢固地耦合至轴26。在其他预期的实施例中,安装托架28可利用各种类型的机械紧固件和/或粘合剂而耦合至轴26。在其他预期的实施例中,安装托架28及轴26可被形成为连续块材料的完整部分。
安装托架28可包括自夹紧部分32的顶部延伸且界定横向间隔开的紧固片36a、36b的紧固部分34。紧固片36a、36b可用以例如利用延伸穿过在紧固片36a、36b中及在鞍座22中形成的各对孔38a、38b及40a、40b(图1B)的机械紧固件(图中未示出)在各个指状件12a的远侧端部18处可移除地耦合至鞍座22(图1B)的底部。
参照图1E,指状件12a的远侧端部18被示出为具有为清晰起见而省略的支撑垫20(图1A)。阻尼器24a的轴26可穿过指状件12a的敞开的远侧端部18而延伸至指状件12a的中空内部,其中轴26以与指状件12a大致同轴的关系安置且轴26的端部30自远侧端部18突出。阻尼器24a的安装托架28的夹紧部分32可邻接远侧端部18及指状件12a,且安装托架28的紧固片36b可如上所述在鞍座22下方延伸并可紧固至鞍座22(尽管图1E中未示出,然而紧固片36a可以与紧固片36b相同的方式在鞍座22下方延伸并可紧固至鞍座22)。因此,阻尼器24a可在避免指状件12a的外部尺寸或重量显著增大并使整个阻尼器24a安置于鞍座22下方以免与在指状件12a顶部上被支撑的衬底发生干扰的同时而牢固地紧固至指状件12a。
阻尼器24a的固有频率可取决于阻尼器24a的刚度及质量分布。阻尼器24a的刚度及质量分布可被配置成提供具有与指状件12a的固有频率相等或处于指状件12a的固有频率的预定义公差(例如,10%)以内的固有频率的阻尼器24a。在如此配置阻尼器24a,且阻尼器24a如上所述刚性地耦合至指状件12a的条件下,阻尼器24a及指状件12a的匹配的(或近似匹配的)固有频率可相互干扰以提供具有两个额外振动频率的聚合结构(即,耦合的阻尼器24a与指状件12a),其中一个额外振动频率低于各别阻尼器24a及各别指状件12a的固有频率且一个额外振动频率高于各别阻尼器24a及各别指状件12a的固有频率。所述两个额外振动频率的振幅可小于各别阻尼器24a及各别指状件12a的固有频率的振幅。因此,将阻尼器24a耦合至指状件12a可显著地减小指状件12a在末端执行器10(图1A)的操作期间的振动的振幅,从而减轻由指状件12a支撑的衬底的非预期及不期望的移位并使得末端执行器10能够以相对于传统的末端执行器更高的速度操作以提高衬底处理***的生产量。
在各种实施例中,阻尼器24a(且相似地,阻尼器24b至24d)可具有与以上己阐述的构型、形状、大小、及安装布置不同的构型、形状、大小、及安装布置,其中此类构型、形状、大小、及安装布置可相似地提供具有与指状件12a的固有频率相等或处于指状件12a的固有频率的预定义公差以内的固有频率的此类实施例。在各种实施例中,指状件12a(且相似地,指状件12b至12d)可设置有沿指状件12a的长度分布的多个阻尼器。此类阻尼器可耦合至指状件12a自身、耦合至指状件12a的鞍座22中的一者或多者、和/或耦合至指状件12a的支撑垫20中的一者或多者。在各种实施例中,此类阻尼器被形成为指状件12a、鞍座22、和/或支撑垫20的完整的、连续的特征。在指状件上实作多个阻尼器可提供具有相对于上述“一个阻尼器”实施例的更大数量的振动频率的聚合结构(即,指状件及所述多个阻尼器),此类振动频率具有较所述一个阻尼器实施例的振幅更小的振幅且因此对指状件提供相对于所述一个阻尼器实施例的更大的振动阻尼。
图2是根据本发明的另一实施例的示例性末端执行器110的俯视透视图。末端执行器110可为具有自基座114延伸的两个指状件112a、112b的大致平的结构。在各种实施例中,末端执行器110可实作有比图2中示出的两个指状件112a、112b更大数量或更小数量的指状件。
指状件112a、112b可设置有相应切口123a、123b,相应切口123a、123b被形成为穿过指状件112a、112b以用于界定与指状件112a、112b连续、与指状件112a、112b共面、且由与指状件112a、112b相同的材料形成的悬臂振动阻尼器124a、124b(下文中,「阻尼器124a、124b」)。切口123a、123b可如图2中所示为大致U形的。在各种可供选择的实施例中,切口123a、123b实际上可具有相似地界定指状件112a、112b的悬臂部分的任何其他形状(例如,V形)。
与上述的阻尼器24a至24d相似,可设置阻尼器124a、124b用于在避免指状件112a、112b的大小及重量显著增加及避免干扰指状件112a、112b的操作的同时阻尼指状件112a、112b的振动。阻尼器124a、124b的固有频率可取决于阻尼器124a、124b的刚度及质量分布。阻尼器124a、124b的刚度及质量分布可被配置成提供具有与阻尼器124a、124b的对应的指状件112a、112b的固有频率相等或处于阻尼器124a、124b的对应的指状件112a、112b的固有频率的预定义公差(例如,10%)以内的相应固有频率的阻尼器124a、124b。在如此配置阻尼器124a、124b的条件下,阻尼器124a、124b及阻尼器124a、124b的对应的指状件112a、112b的匹配的(或近似匹配的)固有频率可相互干扰以提供具有两个额外振动频率的聚合结构(即,阻尼器124a与指状件112a的聚合结构以及阻尼器124b与指状件112b的聚合结构),其中一个额外振动频率低于相应各别阻尼器124a、124b及相应各别指状件112a、112b的固有频率且一个额外振动频率高于相应各别阻尼器124a、124b及相应各别指状件112a、112b的固有频率。所述两个额外振动频率的振幅小于相应各别阻尼器124a、124b及相应各别指状件112a、112b的固有频率的振幅。因此,为指状件112a、112b提供阻尼器124a、124b可显著地减小指状件112a、112b在末端执行器110的操作期间的振动的振幅,同时减轻由指状件112a、112b支撑的衬底的非预期及不期望的移位并使得末端执行器110能够以相对于传统的末端执行器更高的速度操作以提高衬底处理***的生产量。
在各种实施例中,阻尼器124a、124b可具有与以上己阐述的构型、形状、大小、及布置不同的构型、形状、大小、及布置,其中此类构型、形状、大小、及布置可相似地提供具有与对应的指状件112a、112b的固有频率相等或处于对应的指状件112a、112b的固有频率的预定义公差以内的固有频率的此类实施例。在各种实施例中,指状件112a、112b可设置有与沿指状件112a、112b的长度分布的阻尼器124a、124b相似的各个多个阻尼器(由各个切口界定)。在指状件上实作多个阻尼器可提供具有相对于上述“一个阻尼器”实施例更大数量的振动频率的聚合结构(即,指状件与所述多个阻尼器),此类振动频率具有比所述一个阻尼器实施例的振幅更小的振幅且因此对指状件提供相对于所述一个阻尼器实施例更大的振动阻尼。
图3是根据本发明的另一实施例的示例性末端执行器210的俯视透视图。末端执行器210可为具有自基座214延伸的两个指状件212a、212b的大致平的结构。在各种实施例中,末端执行器210可实作有比图3中示出的两个指状件212a、212b更大数量或更小数量的指状件。
指状件212a、212b可设置有被形成为指状件212a、212b的完整的、连续的延伸部的各个振动阻尼器224a、224b(下文中,“阻尼器224a、224b”)。在所说明的实施例中,阻尼器224a、224b自指状件212a、212b的外边缘延伸。在各种其他实施例中,阻尼器224a、224b可自指状件212a、212b的内边缘、尖端、或下侧延伸。在各种实施例中,阻尼器224a、224b可由与指状件212a、212b相同的材料形成。
阻尼器224a、224b可如图3中所示为大致L形。在各种可供选择的实施例中,阻尼器224a、224b实际上可具有任何形状,例如Z形、U形、W形、圆形形状、矩形形状、三角形形状、不规则形状等。与上述阻尼器24a至24d及124a、124b相似,可设置阻尼器224a、224b用于在避免指状件212a、212b的大小及重量的显著增大及避免干扰指状件212a、212b的操作的同时阻尼指状件212a、212b的振动,如以下将更详细地阐述。
阻尼器224a、224b的固有频率可取决于阻尼器224a、224b的刚度及质量分布。阻尼器224a、224b的刚度及质量分布可被配置成提供具有与阻尼器224a、224b的对应的指状件212a、212b的固有频率相等或处于阻尼器224a、224b的对应的指状件212a、212b的固有频率的预定义公差(例如,10%)以内的相应固有频率的阻尼器224a、224b。在如此配置阻尼器224a、224b,且阻尼器224a、224b如上所述刚性地耦合至指状件212a、212b的条件下,阻尼器224a、224b及阻尼器224a、224b的对应的指状件212a、212b的匹配的(或近似匹配的)固有频率可相互干扰以提供具有两个额外振动频率的聚合结构(即,耦合的阻尼器224a与指状件212a以及耦合的阻尼器224b与指状件212b),其中一个额外振动频率低于相应各别阻尼器224a、224b及相应各别指状件212a、212b的固有频率且一个额外振动频率高于相应各别阻尼器224a、224b及相应各别指状件212a、212b的固有频率。所述两个额外振动频率的振幅小于相应各别阻尼器224a、224b及相应各别指状件212a、212b的固有频率的振幅。因此,将阻尼器224a、224b耦合至指状件212a、212b可显著地减小指状件212a、212b在末端执行器210的操作期间的振动的振幅,同时减轻由指状件212a、212b支撑的衬底的非预期及不期望的移位并使得末端执行器210能够以相对于传统的末端执行器更高的速度操作以提高衬底处理***的生产量。
在各种实施例中,阻尼器224a、224b可具有与以上己阐述的构型、形状、大小、及安装布置不同的构型、形状、大小、及安装布置,其中此类构型、形状、大小、及安装布置可相似地提供具有与对应的指状件212a、212b的固有频率相等或处于对应的指状件212a、212b的固有频率的预定义公差以内的固有频率的此类实施例。在各种实施例中,指状件212a、212b可设置有与沿指状件212a、212b的长度分布的阻尼器224a、224b相似的各个多个阻尼器。在指状件上实作多个阻尼器可提供具有相对于上述“一个阻尼器”实施例的更大数量的振动频率的聚合结构(即,指状件与所述多个阻尼器),此类振动频率具有比所述一个阻尼器实施例的振幅更小的振幅且因此对指状件提供相对于所述一个阻尼器实施例更大的振动阻尼。
鉴于前述说明,所属领域中的普通技术人员将理解由本发明的末端执行器10、110、210及阻尼器24a至24d、124a、124b、及224a、224b提供的优于传统的末端执行器的诸多优点。举例来说,由末端执行器10、110、210及阻尼器24a至24d、124a、124b、及224a、224b带来的第一个优点是减小振动振幅,以减轻由末端执行器10、110、210支撑的衬底的非预期及不期望的移位。由末端执行器10、110、210及阻尼器24a至24d、124a、124b、及224a、224b带来的另一优点是在减轻由末端执行器10、110、210支撑的衬底的非预期移位的同时以相对于传统的末端执行器更大的速度及更大的加速度来移动末端执行器10、110、210的能力。由末端执行器10、110、210及阻尼器24a至24d、124a、124b、及224a、224b带来的又一优点是在减轻对末端执行器10、110、210的衬底处理能力的干扰的同时及在避免末端执行器10、110、210的大小或重量相对于传统末端执行器显著增大的同时实作上述振动阻尼特征的能力。
本发明的范围并非由本文中所述的具体实施例限制。确切来说,除本文中所述的这些实施例外,通过前述说明及附图,本发明的其他各种实施例及对本发明的其他各种修改对所属领域中的普通技术人员而言将显而易见。因此,此类其他实施例及修改旨在落于本发明的范围内。此外,尽管在本文中出于特定目的在特定环境中的特定实作的上下文中说明了本发明,然而所属领域中的普通技术人员将认识到,本发明的有效性并非仅限于此而是本发明可出于任何目的在任何环境中有益地实作。因此,以上所述的权利要求将鉴于在如本文中所述的本发明的充分范围及精神来理解。
Claims (11)
1.一种自阻尼末端执行器,其特征在于,包括:
基座;
多个指状件,自所述基座延伸且用以支撑衬底;以及
阻尼器,与所述多个指状件中的一者相关联,所述阻尼器具有固有频率,所述固有频率处于所述多个指状件中的一者的固有频率的预定公差以内,
其中所述阻尼器包括延伸至所述多个指状件中的一者的中空内部中的细长轴。
2.根据权利要求1所述的自阻尼末端执行器,其特征在于,进一步包括鞍座,所述鞍座耦合至所述多个指状件中的一者以利于将支撑垫耦合至所述多个指状件中的一者,所述阻尼器进一步包括安装托架,所述安装托架耦合至自所述多个指状件中的一者的端部突出的所述细长轴的端部,所述安装托架耦合至所述鞍座。
3.根据权利要求1所述的自阻尼末端执行器,其特征在于,所述阻尼器是由所述多个指状件中的一者中的切口界定的所述多个指状件中的一者的悬臂部分。
4.根据权利要求1所述的自阻尼末端执行器,其特征在于,所述阻尼器自所述多个指状件中的一者的边缘延伸且与所述多个指状件中的一者的所述边缘连续。
5.根据权利要求1所述的自阻尼末端执行器,其特征在于,所述预定公差是10%。
6.根据权利要求1所述的自阻尼末端执行器,其特征在于,进一步包括鞍座,所述鞍座耦合至所述多个指状件中的一者以利于将支撑垫耦合至所述多个指状件中的一者,所述阻尼器进一步包括安装托架,所述安装托架耦合至自所述多个指状件中的一者的端部突出的细长轴的端部,所述安装托架耦合至所述鞍座。
7.一种自阻尼末端执行器,其特征在于,包括:
基座;
平的第一指状件及第二指状件,自所述基座延伸且用以支撑衬底;以及
第一阻尼器,包括由在所述第一指状件中形成的切口界定的所述第一指状件的悬臂部分,所述第一阻尼器具有固有频率,所述第一阻尼器的所述固有频率处于所述第一指状件的固有频率的预定公差以内;以及
第二阻尼器,包括由在所述第二指状件中形成的切口界定的所述第二指状件的悬臂部分,所述第二阻尼器具有固有频率,所述第二阻尼器的所述固有频率处于所述第二指状件的固有频率的预定公差以内。
8.根据权利要求7所述的自阻尼末端执行器,其特征在于,与所述第一阻尼器相关联的所述预定公差是10%。
9.根据权利要求7所述的自阻尼末端执行器,其特征在于,所述第一指状件的所述切口是U形的。
10.一种自阻尼末端执行器,其特征在于,包括:
基座;
平的第一指状件及第二指状件,自所述基座延伸且用以支撑衬底;
第一阻尼器,自所述第一指状件的边缘延伸且与所述第一指状件的所述边缘连续,所述第一阻尼器具有固有频率,所述第一阻尼器的所述固有频率处于所述第一指状件的固有频率的预定公差以内;以及
第二阻尼器,自所述第二指状件的边缘延伸且与所述第二指状件的所述边缘连续,所述第二阻尼器具有固有频率,所述第二阻尼器的所述固有频率处于所述第二指状件的固有频率的预定公差以内。
11.根据权利要求10所述的自阻尼末端执行器,其特征在于,与所述第一阻尼器相关联的所述预定公差是10%。
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KR102609419B1 (ko) | 2023-12-04 |
CN108431943A (zh) | 2018-08-21 |
WO2017112355A1 (en) | 2017-06-29 |
US9862101B2 (en) | 2018-01-09 |
KR20180088481A (ko) | 2018-08-03 |
US20170173799A1 (en) | 2017-06-22 |
TW201724332A (zh) | 2017-07-01 |
TWI712099B (zh) | 2020-12-01 |
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