CN108400211A - A kind of light emitting diode with multi-wavelength - Google Patents
A kind of light emitting diode with multi-wavelength Download PDFInfo
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- CN108400211A CN108400211A CN201810146423.2A CN201810146423A CN108400211A CN 108400211 A CN108400211 A CN 108400211A CN 201810146423 A CN201810146423 A CN 201810146423A CN 108400211 A CN108400211 A CN 108400211A
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- emitting diode
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- epitaxial layer
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- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007771 core particle Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- -1 110 ~ 112 Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention is in relation to a kind of light emitting diode with multi-wavelength, the at least substrate with several regions and epitaxial layer corresponding with the substrate in several regions, epitaxial layer includes the first semiconductor layer, active layer and the second semiconductor layer, the substrate in several regions has the pattern of different height and spacing, active layer corresponding from the epitaxial layer in several regions has different In contents and goes out optical wavelength, only can constitute the epitaxial layer of multi-wavelength's light extraction on the same substrate by changing underlay pattern.
Description
Technical field
The present invention relates to light emitting diode fields, and in particular to a kind of light emitting diode with multi-wavelength.
Background technology
Light emitting diode（Light Emitting Diodem, abbreviation LED）Due to its efficient luminous efficiency, at present
Through being widely applied to each light source field such as backlight, illumination, car light, decoration, display.The prior art is mainly adjusted by hair
The component and growth temperature of optical diode active layer adjust the wavelength that active layer excites light extraction, if necessary to by multi-wavelength's
Light emitting diode is set to application end, then production process is complex.
Invention content
To solve the problems in background technology, having luminous the two of multi-wavelength the main purpose of the present invention is to provide a kind of
Pole pipe simplifies the manufacture craft of existing multi-wave length illuminating diode and realizes the light emitting diode that can have both multi-wavelength light extraction.
In order to achieve the above objectives, the invention discloses a kind of light emitting diodes with multi-wavelength, at least have several
The substrate in region and epitaxial layer corresponding with the substrate in each region, epitaxial layer include the first semiconductor layer, active layer and the second half
Conductor layer, the substrate in each region is in substrate figure of the surface contacted with epitaxial layer with different height, different spacing, each region
The active layer of the corresponding epitaxial layer of substrate there is the In of different content, the corresponding epitaxial layer of substrate in each region to go out after being stimulated
Optical wavelength is different, in the present invention can be by making different figures on same substrate, to produce different wave length
Epitaxial layer.
According to the present invention, go out optical wavelength include ultraviolet wavelength, blue light wavelength, green wavelength, red light wavelength, infrared wavelength or
Person's wavelengths above arbitrarily combines, that is, excites light extraction that can cover panchromatic system's wavelength.
In some embodiments, it is preferred that the height of the corresponding substrate figure of blue light wavelength is 1.5 ~ 2.0 μm.
In accordance with this embodiment it is preferable that, the spacing of the corresponding substrate figure of blue light wavelength is 1.8 ~ 2.2 μm.
In accordance with this embodiment it is preferable that, the active layer In contents of the corresponding epitaxial layer of blue light wavelength are 18% ~ 22%.
In some embodiments, it is preferred that the height of the corresponding substrate figure of green wavelength is 0.5 ~ 1.5 μm.
In accordance with this embodiment it is preferable that, the spacing of the corresponding substrate figure of green wavelength is 0.8 ~ 1.2 μm.
In accordance with this embodiment it is preferable that, the active layer In contents of the corresponding epitaxial layer of green wavelength are 30% ~ 35%.
In some embodiments, it is preferred that be provided with barrier layer between the corresponding epitaxial layer of substrate in each region.
In accordance with this embodiment it is preferable that, barrier material SiO2Or SiNx。
In accordance with this embodiment it is preferable that, barrier layer is higher than the height of junior in adjacent substrate figure.
In some embodiments, it is preferred that there is groove between the substrate in each region.
, according to the invention it is preferred to, active layer includes InGaN.
, according to the invention it is preferred to, the chip size of light emitting diode is within 100 μm * 100 μm, i.e. the present invention can be with
Apply to the making of micro- light emitting diode.
, according to the invention it is preferred to, the InGaN lattice constants of the active layer of the corresponding epitaxial layer of substrate in each region are not
Together.
, according to the invention it is preferred to, substrate figure includes terrace with edge, histogram column, round platform, cylinder, circular cone, pyramid, hemisphere
Or arbitrary combination above-mentioned.
, according to the invention it is preferred to, the InGaN lattice constants of the active layer of the corresponding epitaxial layer of substrate in each region are not
Together.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The purpose of the present invention and other advantages can be by specification, rights
Specifically noted structure is realized and is obtained in claim and attached drawing.
Description of the drawings
Attached drawing is used to provide further understanding of the present invention, and a part for constitution instruction, the reality with the present invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is the light emitting diode schematic diagram of one embodiment；
Fig. 2 is the light emitting diode schematic diagram of second embodiment；
Fig. 3 is the light emitting diode schematic diagram of third embodiment；
Fig. 4 is the light emitting diode schematic diagram of the 4th embodiment.
Attached drawing indicates：100, substrate, 110 ~ 112, substrate figure, the 200, first semiconductor layer, 300, active layer, 400,
Two semiconductor layers, 500, barrier layer, 600, groove, 700, wavelength conversion material.
Specific implementation mode
Just several specific embodiments of the present invention are described in further detail in conjunction with attached drawing below.But below in relation to implementation
The description of example and explanation are not limited in any way the scope of the present invention.
It should be appreciated that term used in the present invention is limited merely for the purpose of description specific implementation mode without being intended to
The system present invention.It further understands, when term "comprising", " including " is used in the present invention, the feature, whole for showing statement
The presence of body, step, component, and/or packaging part, and it is not excluded for other one or more features, entirety, step, component, encapsulation
The presence or increase of part, and/or combination thereof.
Unless defined otherwise, all terms used in the present invention（Including technical terms and scientific terms）With with this
The identical meaning of meaning that the those of ordinary skill of field that the present invention belongs to is generally understood.It is to be further understood that the present invention is made
Term should be understood there is consistent with meaning of these terms in the context and related field of this specification contain
Justice, and should not be understood with the meaning of idealization or too formal, in addition to be clearly so defined in the present invention.
The present invention provides a kind of light emitting diodes with multi-wavelength, simplify the making of existing multi-wave length illuminating diode
Technique and realize the LED device for making and integrating multi-wavelength light extraction.
A kind of light emitting diode with multi-wavelength disclosed by the invention, at least with several regions substrate 100 and
Epitaxial layer corresponding with the substrate in each region, epitaxial layer include the first semiconductor layer 200, active layer 300 and the second semiconductor layer
400, the substrate in each region is in substrate figure 110 of the surface contacted with epitaxial layer with different height, different spacing, each region
The active layer 300 of the corresponding epitaxial layer of substrate there is the In of different content, the corresponding epitaxial layer of substrate in each region is stimulated
After go out optical wavelength difference, in the present invention can be by making different figures on same substrate, in same epitaxial manufacture process
Under produce the epitaxial layer of different wave length.Cause the stacking stress of epitaxial semiconductor material different by underlying graphics variation, shape
Of different sizes according to lattice at different epitaxial material lattices, In components are different when causing to stack, and are formed when extension stacks and excited
Go out the offset of optical wavelength.
According to the present invention, on same substrate 100, the epitaxial layer to grow out simultaneously can include a variety of light extractions, and
Do not need additional epitaxial growth steps, go out optical wavelength include ultraviolet wavelength, it is blue light wavelength, green wavelength, red light wavelength, infrared
Wavelength or wavelengths above arbitrarily combine, that is, excite light extraction that can cover panchromatic system's wavelength, meet shining same for different wave length
Requirements of combination in diode core particles.
Referring to Fig. 1, one embodiment provided by the invention is a kind of light emitting diode, a kind of hair with multi-wavelength
Optical diode, at least substrate and epitaxial layer corresponding with the substrate in each region, substrate 100 and epitaxial layer phase with several regions
It includes terrace with edge, histogram column, round platform, cylinder, circular cone, pyramid, hemisphere that the surface of contact, which has substrate figure 110, substrate figure 110,
Body or arbitrary combination above-mentioned.Epitaxial layer includes the first semiconductor layer, active layer and the second semiconductor layer, the material packet of active layer
InGaN is included, active layer preferred in this embodiment is the multi-quantum pit structure of InGaN/GaN, at least one of which region
Light extraction is blue light wavelength after the corresponding epitaxial layer of substrate is stimulated, which is 400 ~ 480nm, in order to realize the wavelength, at this
Preferred in embodiment, substrate figure 110 is pyramid type, the height h of the corresponding substrate figure of blue light wavelength 111BIt is 1.5 ~ 2.0
μm, the spacing d of the corresponding substrate figure of blue light wavelength 111BIt is 1.8 ~ 2.2 μm.In growth circle that above-mentioned substrate figure 111 provides
Face, the active layer In contents for finally growing corresponding epitaxial layer are 18% ~ 22%.
In this embodiment, light extraction is green wavelength after also tool is stimulated there are one the corresponding epitaxial layer of substrate in region,
The wavelength is 500 ~ 560nm, preferred in this embodiment, and substrate figure 112 is pyramid type, the corresponding tpo substrate of green wavelength
The height h of shape 112GIt is 0.5 ~ 1.5 μm, the spacing d of the corresponding substrate figure of green wavelength 112GIt is 0.8 ~ 1.2 μm.Green wavelength
The active layer In contents of corresponding epitaxial layer are 30% ~ 35%.
On the whole, it can be seen that the present embodiment at least can by change substrate figure 110 same substrate 100 simultaneously
Epitaxial growth is produced be electrically excited after have both the light emitting diode of blue light and green light light extraction.
With reference to figure 2, second of embodiment provided by the invention, on the basis of above-mentioned light emitting diode epitaxial structure,
Barrier layer 500, extension bottom when avoiding or reducing growth using barrier layer 500 are set between the corresponding epitaxial layer of substrate in each region
Layer material interferes with each other.500 material of barrier layer provided in this embodiment is SiO2Or SiNx.Barrier layer 500 is higher than adjacent substrate
Good Anti-Jamming can be achieved in the height of junior in figure 110 substantially.
Similar with 500 effect of above-mentioned barrier layer, the present invention provides a kind of embodiment, on the basis of one embodiment
On, there is groove 600, groove 600 to provide certain Anti-Jamming between the substrate in each region.
Referring to Fig. 3, above-mentioned each embodiment is applied to light emitting diode by the third embodiment provided by the invention
Chip size be 100 μm * 100 μm within microchip on, through the invention while growing technology, by different wave length
Epitaxial layer is integrated on one piece of micro- light-emitting diode chip for backlight unit, compares other prior arts, the technology of the present invention can effectively reduce luminous
The volume of diode chip for backlight unit, the effect of simplification of flowsheet.
Referring to Fig. 4, the 4th kind of embodiment provided by the invention, the embodiment is a kind of light-emitting device, and light-emitting device can be with
The luminescence component or light emitting packages being made of light emitting diode, the embodiment are blue in part on the basis of embodiment 1
Wavelength conversion material 700 is arranged in the correspondence light-emitting device region of light epitaxial layer, such as the present embodiment is above the second semiconductor layer
Wavelength conversion material 700 is covered, some blue light or green light are converted into feux rouges, common wavelength conversion material such as fluorescence
Powder.Can realize the three primary colours display function of red, green, blue using same core particles.
The above is only a preferred embodiment of the present invention, it is noted that for those skilled in the art,
Without departing from the principles of the invention, several improvements and modifications can also be made, these improvements and modifications also should be regarded as this hair
Bright protection domain.
Claims (16)
1. a kind of light emitting diode with multi-wavelength, substrate at least with several regions and corresponding with the substrate in each region
Epitaxial layer, epitaxial layer include the first semiconductor layer, active layer and the second semiconductor layer, it is characterised in that：The substrate in each region
In substrate figure of the surface contacted with epitaxial layer with different height, different spacing, the corresponding epitaxial layer of substrate in each region
Active layer there is the In of different content, the corresponding epitaxial layer of substrate in each region to go out optical wavelength difference after being stimulated.
2. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：Going out optical wavelength includes
Ultraviolet wavelength, blue light wavelength, green wavelength, red light wavelength, infrared wavelength or wavelengths above arbitrarily combine.
3. a kind of light emitting diode with multi-wavelength according to claim 2, it is characterised in that：Blue light wavelength corresponds to
Substrate figure height be 1.5 ~ 2.0 μm.
4. a kind of light emitting diode with multi-wavelength according to claim 3, it is characterised in that：Blue light wavelength corresponds to
Substrate figure spacing be 1.8 ~ 2.2 μm.
5. a kind of light emitting diode with multi-wavelength according to claim 2,3, any one of 4, feature exist
In：The active layer In contents of the corresponding epitaxial layer of blue light wavelength are 18% ~ 22%.
6. a kind of light emitting diode with multi-wavelength according to claim 2, it is characterised in that：Green wavelength corresponds to
Substrate figure height be 0.5 ~ 1.5 μm.
7. a kind of light emitting diode with multi-wavelength according to claim 6, it is characterised in that：Green wavelength corresponds to
Substrate figure spacing be 0.8 ~ 1.2 μm.
8. a kind of light emitting diode with multi-wavelength according to claim 2,6, any one of 7, feature exist
In：The active layer In contents of the corresponding epitaxial layer of green wavelength are 30% ~ 35%.
9. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：The substrate in each region
It is provided with barrier layer between corresponding epitaxial layer.
10. a kind of light emitting diode with multi-wavelength according to claim 9, it is characterised in that：Barrier material
For SiO2Or SiNx。
11. a kind of light emitting diode with multi-wavelength according to claim 9, it is characterised in that：Barrier layer is higher than
The height of junior in adjacent substrate figure.
12. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：The lining in each region
There is groove between bottom.
13. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：The material of active layer
Material includes InGaN.
14. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：Light emitting diode
Chip size be 100 μm * 100 μm within.
15. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：Substrate figure
Include terrace with edge, histogram column, round platform, cylinder, circular cone, pyramid, hemisphere or arbitrary combination above-mentioned.
16. a kind of light emitting diode with multi-wavelength according to claim 1, it is characterised in that：The lining in each region
The InGaN lattice constants of the active layer of the corresponding epitaxial layer in bottom are different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810146423.2A CN108400211B (en) | 2018-02-12 | 2018-02-12 | Light-emitting diode with multiple wavelengths |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810146423.2A CN108400211B (en) | 2018-02-12 | 2018-02-12 | Light-emitting diode with multiple wavelengths |
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| Publication Number | Publication Date |
|---|---|
| CN108400211A true CN108400211A (en) | 2018-08-14 |
| CN108400211B CN108400211B (en) | 2021-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810146423.2A Active CN108400211B (en) | 2018-02-12 | 2018-02-12 | Light-emitting diode with multiple wavelengths |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
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|---|---|---|---|---|
| CN103190005A (en) * | 2010-11-04 | 2013-07-03 | 皇家飞利浦电子股份有限公司 | Solid state light emitting devices based on crystallographically relaxed structures |
| JP5403212B2 (en) * | 2008-10-06 | 2014-01-29 | 株式会社Ｉｈｉ | White LED manufacturing apparatus and method |
| CN106784194A (en) * | 2017-01-06 | 2017-05-31 | 上海应用技术大学 | A kind of method for preparing single-chip ultra wide band white light LEDs |
| CN107425413A (en) * | 2016-05-13 | 2017-12-01 | 欧司朗光电半导体有限公司 | Luminous semiconductor chip and the method for manufacturing luminous semiconductor chip |
-
2018
- 2018-02-12 CN CN201810146423.2A patent/CN108400211B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5403212B2 (en) * | 2008-10-06 | 2014-01-29 | 株式会社Ｉｈｉ | White LED manufacturing apparatus and method |
| CN103190005A (en) * | 2010-11-04 | 2013-07-03 | 皇家飞利浦电子股份有限公司 | Solid state light emitting devices based on crystallographically relaxed structures |
| CN107425413A (en) * | 2016-05-13 | 2017-12-01 | 欧司朗光电半导体有限公司 | Luminous semiconductor chip and the method for manufacturing luminous semiconductor chip |
| CN106784194A (en) * | 2017-01-06 | 2017-05-31 | 上海应用技术大学 | A kind of method for preparing single-chip ultra wide band white light LEDs |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
| CN111048637B (en) * | 2019-12-09 | 2022-03-18 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
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| CN108400211B (en) | 2021-03-26 |
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