CN106784194A - A kind of method for preparing single-chip ultra wide band white light LEDs - Google Patents
A kind of method for preparing single-chip ultra wide band white light LEDs Download PDFInfo
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- CN106784194A CN106784194A CN201710010262.XA CN201710010262A CN106784194A CN 106784194 A CN106784194 A CN 106784194A CN 201710010262 A CN201710010262 A CN 201710010262A CN 106784194 A CN106784194 A CN 106784194A
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 34
- 239000010980 sapphire Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 26
- 238000000608 laser ablation Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000368 destabilizing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a kind of method for preparing single-chip ultra wide band white light LEDs, using femto-second laser, subregion etches the groove of nano-scale and forms graphical nanostructured on a sapphire substrate, each region etch goes out the groove with different depth, then InGaN/GaN SQWs are grown in this structure, different zones LED crystal grain can launch the light of different wave length, the compound generation white light of these light.Single-chip LED, it is not necessary in surface coating fluorescent powder, only can be achieved with white light emission by single-chip luminous in itself；By to the phosphide element that adulterated in SQW, it is possible to produce the LED of ultra wide band；In the case where stoke shift is not produced, luminous efficiency can be higher；Cost can be substantially reduced under the switch condition for not needing fluorescent material.Promote the development of unstressed configuration powder single-chip ultra wide band white light LEDs device science and technology.
Description
Technical field
The present invention relates to a kind of LED illumination technology, more particularly to a kind of method for preparing single-chip ultra wide band white light LEDs.
Background technology
White light emitting diode（LED ）The advantages of because of its energy-saving and environmental protection, long-life, is extensive as light source of new generation
Using in fields such as illumination, display and car lights.At present, white light LEDs light-source encapsulation is commercially used, it is main using in blue-ray LED
Fluorescent material is covered on chip.This blue chip transmitting band is narrower, short wavelength's blue light for being produced by composite LED substrate and glimmering
Long wavelength's gold-tinted of light powder transmitting, so as to obtain wideband white transmitting.Packaging technology is bonded in blue light for silica gel mixed fluorescent powder
On chip.However, silica gel is organic matter, Tg（Glass transition temperature）Only 150 DEG C or so and thermal conductivity is low, make in light source
Easily occur during aging and turn yellow.Silica gel is aging to cause encapsulating structure unstable, fluorescent material and die bonding loosely,
Also easily occur breaking welding gold thread and causing dead lamp phenomenon, silica gel turns yellow can cause light source color temperature to drift about, above destabilizing factor
LED light sources reliability and service life are all significantly impacted, the development of great power LED is limited.
Another kind realizes that the method for white light LEDs is emitted white light using various LED crystal grain are compound, and every kind of LED crystal grain can be with
Launch the light of different wave length.For example, the content by changing indium in InGaN/GaN bases LED, a LED crystal grain can be realized
Blue light, blue green light and ultraviolet light/amber light transmitting.In recent years, there are some researches show by controlling InGaN/GaN nanometers of column battle array
The diameter of row changes indium component content, it is possible to achieve adjustable wavelength is launched.However, the use of multiple grain largely can
Increase the cost that the luminous complexity of LED is brought, hinder more widely using for this technology.
The content of the invention
The problem for existing is prepared the present invention be directed to LED, it is proposed that a kind of side for preparing single-chip ultra wide band white light LEDs
Method, the chip does not need surface coating fluorescent powder, only can realize white light emission by single-chip luminous in itself, solves single-chip
The key problems such as ultra wide band white light emission stability, luminous efficiency.
The technical scheme is that：A kind of method for preparing single-chip ultra wide band white light LEDs, is existed using femto-second laser
Subregion etches the groove of nano-scale and forms graphical nanostructured in Sapphire Substrate, and each region etch goes out to have not
With the groove of depth, InGaN/GaN SQWs are then grown in this structure, different zones LED crystal grain can launch different ripples
Light long, the compound generation white light of these light.
The method for preparing single-chip ultra wide band white light LEDs, specifically includes following steps：
1）The preparation of graphical sapphire substrate：
A:Preparation facilities includes femto-second laser, and Sapphire Substrate a, condenser lens, a controllable movement of computer is put down
Platform；The laser that femto-second laser is launched is performed etching on a sapphire substrate by after condenser lens focusing, then by calculating
Machine automatically controls Sapphire Substrate, and movement is allowed to carve desired shape in the predetermined direction；
B:Using ti∶sapphire laser femto-second laser, its peak wavelength is 780nm, and repetition rate is 1000Hz, and the pulse duration is
150fs, and the unit pulse energy of etching light source is 2mJ；
C:Patterning etching is carried out to sapphire using strong etching laser, the energy density that strong etching laser is laser exceedes
4.8J/cm2；
D:Point four different zones in one piece of Sapphire Substrate, each region etch goes out the groove with same widths and depth
Array, and the distance between adjacent grooves are all consistent, regional etching depth is different by design requirement；
2）Single chip white light InGaN/GaN LED are prepared based on the Sapphire Substrate after etching：
Using Grown on Sapphire Substrates epitaxial layers of the metal organic chemical vapor deposition method MOCVD after laser ablation, obtain
InGaN/GaN base LED, its Sapphire Substrate from after laser ablation is upwards, whole to cover undoped GaN layer, then undoped
GaN layer includes with area upwards successively on one side：N-type GaN layer, the multiple InGaN/GaN quantum well layers and p-type GaN in 7 cycles
Layer, has electrode P and N respectively in p-type GaN layer and undoped GaN layer another side；7 multiple InGaN in cycle/GaN quantum well layers
Seven quantum well layers in cycle that superposition is formed are alternateed by GaN layer and InGaN layer.
The beneficial effects of the present invention are：The method that the present invention prepares single-chip ultra wide band white light LEDs, single-chip LED, no
Need in surface coating fluorescent powder, only can be achieved with white light emission by single-chip luminous in itself；Adulterated by SQW
Phosphide element, it is possible to produce the LED of ultra wide band；In the case where stoke shift is not produced, luminous efficiency can be higher；Fluorescence is not being needed
Cost can be substantially reduced under the switch condition of powder.Promote unstressed configuration powder single-chip ultra wide band white light LEDs device science and technology
Development.
Brief description of the drawings
Fig. 1 is the present invention by the sapphire structural representation after laser ablation；
Fig. 2 is the structural representation of ultra wide band single-chip InGaN/GaN LED of the present invention；
Fig. 3 is that piecemeal builds the LED structure schematic diagram for emitting white light to the present invention on a single chip.
Specific embodiment
The present invention prepares graphical sapphire substrate by femtosecond laser etching technics first, and then utilizes MOCVD
（Chinese）（Metal organic chemical vapor deposition method）Method grows MQW InGaN/GaN in patterned substrate
LED。
The method that the present embodiment prepares Single chip white light InGaN/GaNLED is comprised the following steps：
First, the preparation of graphical sapphire substrate, as shown in Figure 1：
1st, preparation facilities includes femto-second laser, and Sapphire Substrate a, condenser lens, a controllable movement of computer is put down
Platform；The laser that femto-second laser is launched is performed etching on a sapphire substrate by after condenser lens focusing, then by calculating
Machine automatically controls Sapphire Substrate, and movement is allowed to carve desired shape in the predetermined direction；
2nd, using ti∶sapphire laser femto-second laser, its peak wavelength is 780nm, and repetition rate is 1000Hz, and the pulse duration is
150fs, and the unit pulse energy of etching light source is 2mJ；
3rd, sapphire is patterned using strong etching laser, the energy density that the strong etching laser is laser need to surpass
Threshold value is crossed, its etching threshold value is 4.8J/cm2；
4th, performed etching on a sapphire substrate using strong etching laser, wherein etching well width is W, depth is H；
5th, four different zones in one piece of Sapphire Substrate, each region etch goes out the groove battle array with same widths and depth
Row, and the distance between adjacent grooves are all consistent, regional etching depth is different by design requirement.
2nd, Single chip white light InGaN/GaN LED are prepared based on the Sapphire Substrate after etching, as shown in Figure 2：
1st, the Grown on Sapphire Substrates epitaxial layer using MOCVD methods after laser ablation, obtains InGaN/GaN base LED,
Its Sapphire Substrate from after laser ablation upwards, whole covering undoped GaN layer, then undoped GaN layer on one side successively to
It is upper to include with area：N-type GaN layer, the multiple InGaN/GaN quantum well layers in 7 cycles（It is i.e. mutual by GaN layer and InGaN layer
Seven quantum well layers in cycle that alternately superposition is formed）And p-type GaN layer, divide in p-type GaN layer and undoped GaN layer another side
There are not electrode P and N；
2nd, the light of various different colours can be obtained by changing the depth of laser ablation, it sends light and covers whole visible ray
Etching depth corresponding to blue light, feux rouges, green glow, amber light is wherein launched in spectrum, selection, and four not on one chip
It is the Single chip white light LED that can be emitted white light with region etch, however not excluded that other combinations reach same effect.
As shown in figure 3, four different zones in chip piece are etched to cross respectively and send blue light, feux rouges, green glow, amber
Four kinds of grooves of different depth striated of amber light, produce white light, with this reality by four kinds of mixing of light on the same chip
Existing Single chip white light LED lights.The part that selection wherein can respectively send blue light, feux rouges, green glow and amber light concentrates on list
On one chip.
The groove for etching nano-scale on a sapphire substrate using femto-second laser forms graphical nanostructured, so
InGaN/GaN SQWs are grown in this structure afterwards.Because the nanostructured that femto-second laser etching is produced can be according to laser
Different-energy, etch the groove with different depth H, and cause the difference of the indium content in microcosmic regional area.Due to
The difference of indium content, different zones LED crystal grain can launch the light of different wave length.Such as Fig. 3, feux rouges is sent in red regions,
Blue regions send blue light, and send green glow in green regions sends amber light in amber regions, by the compound of these light
Just produce white light.
The chip does not need surface coating fluorescent powder, only can realize white light emission by single-chip luminous in itself.It is this
The realization of LED will embody the huge technological progress of white light LEDs transmitting, because（1）It only needs to single-chip LED crystal grain,（2）
Cost can be greatly reduced under switch condition under not needing fluorescent material, and（3）In the case where stoke shift is not produced more preferably
Improve luminous efficiency.This project it is important that inquire into substrate graph structure and single-chip it is wide radiation wavelength between pass
System, solves the key problems such as single-chip ultra wide band white light emission stability, luminous efficiency.Promote unstressed configuration powder single-chip ultra wide band
The development of white light LEDs device science and technology.
Claims (2)
1. a kind of method for preparing single-chip ultra wide band white light LEDs, it is characterised in that using femto-second laser in Sapphire Substrate
The groove that upper subregion etches nano-scale forms graphical nanostructured, and each region etch goes out with the recessed of different depth
Groove, then grows InGaN/GaN SQWs in this structure, and different zones LED crystal grain can launch the light of different wave length, this
The compound generation white light of a little light.
2. the method for preparing single-chip ultra wide band white light LEDs according to claim 1, it is characterised in that specifically include as follows
Step：
1）The preparation of graphical sapphire substrate：
A:Preparation facilities includes femto-second laser, and Sapphire Substrate a, condenser lens, a controllable movement of computer is put down
Platform；The laser that femto-second laser is launched is performed etching on a sapphire substrate by after condenser lens focusing, then by calculating
Machine automatically controls Sapphire Substrate, and movement is allowed to carve desired shape in the predetermined direction；
B:Using ti∶sapphire laser femto-second laser, its peak wavelength is 780nm, and repetition rate is 1000Hz, and the pulse duration is
150fs, and the unit pulse energy of etching light source is 2mJ；
C:Patterning etching is carried out to sapphire using strong etching laser, the energy density that strong etching laser is laser exceedes
4.8J/cm2；
D:Point four different zones in one piece of Sapphire Substrate, each region etch goes out the groove with same widths and depth
Array, and the distance between adjacent grooves are all consistent, regional etching depth is different by design requirement；
2）Single chip white light InGaN/GaN LED are prepared based on the Sapphire Substrate after etching：
Using Grown on Sapphire Substrates epitaxial layers of the metal organic chemical vapor deposition method MOCVD after laser ablation, obtain
InGaN/GaN base LED, its Sapphire Substrate from after laser ablation is upwards, whole to cover undoped GaN layer, then undoped
GaN layer includes with area upwards successively on one side：N-type GaN layer, the multiple InGaN/GaN quantum well layers and p-type GaN in 7 cycles
Layer, has electrode P and N respectively in p-type GaN layer and undoped GaN layer another side；7 multiple InGaN in cycle/GaN quantum well layers
Seven quantum well layers in cycle that superposition is formed are alternateed by GaN layer and InGaN layer.
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| CN201710010262.XA CN106784194A (en) | 2017-01-06 | 2017-01-06 | A kind of method for preparing single-chip ultra wide band white light LEDs |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331743A (en) * | 2017-08-29 | 2017-11-07 | 上海应用技术大学 | It is a kind of to prepare method and its structure based on lithium aluminate substrate Single chip white light LED |
| CN108133982A (en) * | 2017-12-20 | 2018-06-08 | 西安智盛锐芯半导体科技有限公司 | The preparation method of multi-colored led chip based on SiC |
| CN108400211A (en) * | 2018-02-12 | 2018-08-14 | 厦门三安光电有限公司 | A kind of light emitting diode with multi-wavelength |
| CN110190163A (en) * | 2019-05-24 | 2019-08-30 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, production method, storage medium and LED chip |
| CN110783434A (en) * | 2019-11-18 | 2020-02-11 | 深圳远芯光路科技有限公司 | LED chip and preparation method thereof |
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
| CN111312867A (en) * | 2020-02-21 | 2020-06-19 | 湘能华磊光电股份有限公司 | Preparation method of single-chip white light LED |
| WO2021138871A1 (en) * | 2020-01-09 | 2021-07-15 | 苏州晶湛半导体有限公司 | Semiconductor structure, substrate therefor and methods for manufacturing the semiconductor structure and the substrate |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331743A (en) * | 2017-08-29 | 2017-11-07 | 上海应用技术大学 | It is a kind of to prepare method and its structure based on lithium aluminate substrate Single chip white light LED |
| CN108133982A (en) * | 2017-12-20 | 2018-06-08 | 西安智盛锐芯半导体科技有限公司 | The preparation method of multi-colored led chip based on SiC |
| CN108400211A (en) * | 2018-02-12 | 2018-08-14 | 厦门三安光电有限公司 | A kind of light emitting diode with multi-wavelength |
| CN110190163B (en) * | 2019-05-24 | 2020-04-28 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, manufacturing method, storage medium and LED chip |
| CN110190163A (en) * | 2019-05-24 | 2019-08-30 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, production method, storage medium and LED chip |
| CN110783434A (en) * | 2019-11-18 | 2020-02-11 | 深圳远芯光路科技有限公司 | LED chip and preparation method thereof |
| CN110783434B (en) * | 2019-11-18 | 2021-06-11 | 深圳远芯光路科技有限公司 | LED chip and preparation method thereof |
| CN111048637A (en) * | 2019-12-09 | 2020-04-21 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
| CN111048637B (en) * | 2019-12-09 | 2022-03-18 | 南京邮电大学 | Multi-color LED epitaxial chip with high-drop-height step structure and preparation method thereof |
| WO2021138871A1 (en) * | 2020-01-09 | 2021-07-15 | 苏州晶湛半导体有限公司 | Semiconductor structure, substrate therefor and methods for manufacturing the semiconductor structure and the substrate |
| US11978826B2 (en) | 2020-01-09 | 2024-05-07 | Enkris Semiconductor, Inc. | Semiconductor structures and substrates thereof, and methods of manufacturing semiconductor structures and substrates thereof |
| CN111312867A (en) * | 2020-02-21 | 2020-06-19 | 湘能华磊光电股份有限公司 | Preparation method of single-chip white light LED |
| CN111312867B (en) * | 2020-02-21 | 2023-12-15 | 湘能华磊光电股份有限公司 | Preparation method of single-chip white light LED |
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Application publication date: 20170531 |
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