CN108390671A - A kind of method and voltage conversion circuit of voltage conversion - Google Patents
A kind of method and voltage conversion circuit of voltage conversion Download PDFInfo
- Publication number
- CN108390671A CN108390671A CN201810161500.1A CN201810161500A CN108390671A CN 108390671 A CN108390671 A CN 108390671A CN 201810161500 A CN201810161500 A CN 201810161500A CN 108390671 A CN108390671 A CN 108390671A
- Authority
- CN
- China
- Prior art keywords
- voltage
- chip
- metal oxide
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of method of voltage conversion, this method includes that the first chip transmits first voltage to the source electrode of metal oxide semiconductcor field effect transistor；According to the first voltage, the channel described in the metal oxide semiconductcor field effect transistor on or off between source electrode and gate；According to the on or off situation in the channel between the source electrode and the gate, the metal oxide semiconductcor field effect transistor exports second voltage corresponding with the first voltage by base stage to the second chip.This method carries out voltage conversion by metal oxide semiconductcor field effect transistor, can effectively drop the design cost and space hold of low voltage transition.The invention also discloses a kind of voltage conversion circuits, equally have above-mentioned advantageous effect.
Description
Technical field
The present invention relates to computer realm, more particularly to a kind of method of voltage conversion；Further relate to a kind of voltage conversion electricity
Road.
Background technology
With the development of computer technology, chip design is more and more various.Currently, different chips, voltage design mostly
For different voltage values, many emerging chips are both designed as low voltage chip.At this point, just needing the core of two groups of different voltages of consideration
How piece carries out signal transmission, to lead to system operation irregularity because of the difference of chip voltage value, for example, high electricity
When the chip of pressure carries out signal transmission with low voltage chip, the foot position of low voltage chip is made to be damaged.
In order to ensure that each chip can be normally carried out signal transmission, voltage conversion is carried out using voltage conversion chip at present.
But voltage conversion chip is often expensive, and using voltage conversion chip carry out voltage conversion when, conversion line need
Occupy the larger space of printed circuit board.
Therefore, how to provide a kind of cheap, the simple voltage conversion method of circuit be those skilled in the art urgently
The technical issues of solution.
Invention content
The object of the present invention is to provide a kind of method of voltage conversion, the design of low voltage transition can effectively drop in this method
Cost and space hold.It is a further object to provide a kind of voltage conversion circuits, equally have above-mentioned beneficial to effect
Fruit.
In order to solve the above technical problems, the present invention provides a kind of method of voltage conversion, the method includes：
First chip transmits first voltage to the source electrode of metal oxide semiconductcor field effect transistor；
According to the first voltage, source electrode and lock described in the metal oxide semiconductcor field effect transistor on or off
Channel between pole；
According to the on or off situation in the channel between the source electrode and the gate, the metal-oxide semiconductor (MOS)
Field-effect transistor exports second voltage corresponding with the first voltage by base stage to the second chip.
Wherein, first chip includes to the source electrode of metal oxide semiconductcor field effect transistor transmission first voltage：
First chip transmits high LJ voltage to the source electrode of the metal oxide semiconductcor field effect transistor.
Wherein, first chip is also wrapped to the source electrode of metal oxide semiconductcor field effect transistor transmission first voltage
It includes：
First chip transmits low LJ voltage to the source electrode of the metal oxide semiconductcor field effect transistor.
In order to solve the above technical problems, the present invention also provides a kind of voltage conversion circuit, the circuit includes：
First chip, for transmitting first voltage to the source electrode of metal oxide semiconductcor field effect transistor；
Metal oxide semiconductcor field effect transistor, for according to the first voltage, source electrode described on or off with
Channel between gate；And according to the on or off situation according to the channel between the source electrode and the gate, pass through base
Pole exports second voltage corresponding with the first voltage to the second chip；
Second chip, for receiving the second voltage.
Wherein, first chip is specifically used for：
High LJ voltage is transmitted to the source electrode of the metal oxide semiconductcor field effect transistor or to the metal
The source electrode of oxide semiconductor field effect transistor transmits low LJ voltage.
Wherein, the metal oxide semiconductcor field effect transistor is specially double metal oxide semiconductor field effect crystal
Pipe.
The method of voltage provided by the present invention conversion, including the first chip is to metal oxide semiconductcor field effect transistor
Source electrode transmit first voltage；According to the first voltage, the metal oxide semiconductcor field effect transistor on or off
Channel between the source electrode and gate；According to the on or off situation in the channel between the source electrode and the gate, institute
It states metal oxide semiconductcor field effect transistor and exports corresponding with the first voltage second to the second chip by base stage
Voltage.
It is compared to the method that tradition carries out voltage conversion using voltage conversion chip, voltage conversion provided by the present invention
Method executes the operation of the voltage conversion of different chip chambers by metal oxide semiconductcor field effect transistor, each realizing
While signal transmits between chip, the design cost and space hold of voltage conversion are effectively reduced, cost pipe is met
Control demand.
Voltage conversion circuit provided by the present invention equally has above-mentioned advantageous effect.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to institute in the prior art and embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
The flow diagram of the method for the voltage conversion that Fig. 1 is provided by the embodiment of the present invention；
The schematic diagram for the voltage conversion circuit that Fig. 2 is provided by the embodiment of the present invention；
The schematic diagram of the voltage conversion for the multi-chip that Fig. 3 is provided by the embodiment of the present invention.
Specific implementation mode
Core of the invention is to provide a kind of method of voltage conversion, and the design of low voltage transition can effectively drop in this method
Cost and space hold.Another core of the present invention is to provide a kind of voltage conversion circuit, equally has above-mentioned beneficial to effect
Fruit.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Referring to FIG. 1, the flow diagram for the method that Fig. 1 is converted by the voltage that the embodiment of the present invention provides；With reference to figure 1
It is found that this method may comprise steps of：
S100：First chip transmits first voltage to the source electrode of metal oxide semiconductcor field effect transistor；
Specifically, the signal pin of the first chip, that is, be used for transmission the pin and metal oxide semiconductcor field effect of signal
The source lead of transistor is connected, to be drawn to the source electrode of metal oxide semiconductcor field effect transistor by the signal pin
Foot transmits first voltage.
Wherein, above-mentioned first chip includes to the source electrode of metal oxide semiconductcor field effect transistor transmission first voltage：
First chip transmits high LJ voltage to the source electrode of metal oxide semiconductcor field effect transistor.
Specifically, when the voltage of the first chip is high voltage, the first chip need to be LJ high to the transmission of the second chip, this
When, one high LJ voltage can be transmitted to the source electrode of connected metal oxide semiconductcor field effect transistor, to
It realizes the purpose for notifying that the second chip first chip is high voltage chip, and then completes to interrogate between the first chip and the second chip
Number transmission.
Wherein, above-mentioned first chip sends first voltage to the source electrode of metal oxide semiconductcor field effect transistor and also wraps
It includes：First chip transmits low LJ voltage to the source electrode of metal oxide semiconductcor field effect transistor.
Specifically, when the voltage of the first chip is low-voltage, it can be to connected metal-oxide semiconductor (MOS)
The source electrode of field-effect transistor transmits a low LJ voltage, to notify the second chip that first chip is low-voltage core at this time
Piece, and then complete the transmission of signal between the first chip and the second chip.
S200：According to first voltage, between metal oxide semiconductcor field effect transistor on or off source electrode and gate
Channel；
S300：According to the on or off situation in the channel between source electrode and gate, metal oxide semiconductcor field effect is brilliant
Body pipe exports second voltage corresponding with first voltage by base stage to the second chip.
Specifically, since the voltage that the first chip is transmitted to the source electrode of metal oxide semiconductcor field effect transistor may
Be also possible to as low LJ voltage for high LJ voltage, the source electrode of corresponding metal oxide semiconductcor field effect transistor with
Channel between gate can have shutdown in conducting two states, and further, metal oxide semiconductcor field effect transistor passes through
The second voltage that base stage is exported to the second chip can correspond to high LJ voltage and low LJ voltage, i.e. second voltage may be height
LJ voltages, it is also possible to be low LJ voltage.When the first chip is transmitted to the source electrode of metal oxide semiconductcor field effect transistor
High LJ voltage, such as when 5V voltages, the channel between the source electrode and gate of the metal oxide semiconductcor field effect transistor is just
It is off state, that is, the state being not turned on.The base stage phase of second chip and metal oxide semiconductcor field effect transistor at this time
The voltage of pin even can pull up as the pin voltage of itself, such as 3.3V, and the second chip receives high LJ and notifies at this time；Phase
Instead, when the first chip transmits low LJ voltage to the source electrode of metal oxide semiconductcor field effect transistor, such as when 0V voltages, this
Channel between metal oxide semiconductcor field effect transistor source electrode and gate will be connected, corresponding, the second chip and metal
The voltage of the connected pin of the base stage of oxide semiconductor field effect transistor can be pulled to low LJ voltage due to source voltage
0V, then, the second chip receive low LJ notice.
Importantly, be used merely to will not for the description of above-mentioned first chip, the second chip and first voltage, second voltage
With two chips and two voltages distinguish, without to indicate the chip, voltage or operation between there are any realities
The relationship or sequence on border.In addition, above-mentioned high LJ voltage, low LJ voltage are opposite, for example, the voltage phase of the first chip
Voltage for the second chip is high LJ voltage, and the voltage of the second chip is then low LJ electricity relative to the voltage of the first chip
Pressure.
In conclusion voltage conversion method provided by the present invention, by metal oxide semiconductcor field effect transistor come
Execute the operation of the voltage conversion of the chip chamber of different voltages effectively reduces while signal transmits between realizing each chip
The design cost and space hold of voltage conversion, meet cost control demand.
The present invention also provides a kind of voltage conversion circuit, the voltage conversion circuit described below can be with above description
Voltage conversion method correspond reference.Referring to FIG. 2, the voltage conversion circuit that Fig. 2 is provided by the embodiment of the present invention
Schematic diagram；As shown in Figure 2, which may include：
First chip 10, for transmitting first voltage to the source electrode of metal oxide semiconductcor field effect transistor；
Metal oxide semiconductcor field effect transistor 20, for according to first voltage, on or off source electrode and gate it
Between channel；And according to the on or off situation in the channel between source electrode and gate, exported to the second chip 30 by base stage
Second voltage corresponding with first voltage；
Second chip 30, for receiving second voltage.
Specifically, being used for transmission the pin and metal oxide semiconductcor field effect transistor 20 of signal in the first chip 10
Source lead is connected, the base of the pin for being used for transmission signal and metal oxide semiconductcor field effect transistor of the second chip 30
Pole pin is connected.On this basis, the first chip 10 transmits first to the source electrode of metal oxide semiconductcor field effect transistor
Voltage；Metal oxide semiconductcor field effect transistor 20, the channel between on or off source electrode and gate；And according to source electrode with
The on or off situation in the channel between gate exports corresponding with first voltage second by base stage to the second chip 30
Voltage.
Wherein, the first chip 10 is specifically used for：It is transmitted to the source electrode of metal oxide semiconductcor field effect transistor LJ high
Voltage transmits low LJ voltage to the source electrode of metal oxide semiconductcor field effect transistor.
Specifically, when the first chip 10 is high voltage chip, which can be to metal oxide semiconductcor field effect
The source electrode of transistor 20 transmits one high LJ voltage；When the first chip 10 is low voltage chip, which can be to
The source electrode of metal oxide semiconductcor field effect transistor 20 sends a low LJ voltage.
Wherein, metal oxide semiconductcor field effect transistor 20 is specially double metal oxide semiconductor field-effect transistor.
Specifically, due in practical applications, the possible more than two of the number for carrying out the chip of voltage conversion is needed, may be used also
It can be four.So two metal oxide semiconductcor field effect transistors can be packaged together, aoxidized by the bimetallic
Object semiconductcor field effect transistor realizes the voltage conversion of four chips.As shown in figure 3, what Fig. 3 was provided by the embodiment of the present invention
The schematic diagram of the voltage conversion of multi-chip；Wherein, chip 1 is carried out with chip 2 by metal oxide semiconductcor field effect transistor 1
Voltage is converted, and chip 3 carries out voltage conversion with chip 4 by metal oxide semiconductcor field effect transistor 2.It is, of course, also possible to
The quantity for expanding metal oxide semiconductcor field effect transistor according to actual conditions, to meet the needs of multi-chip voltage conversion.
Each embodiment is described by the way of progressive in specification, the highlights of each of the examples are with other realities
Apply the difference of example, just to refer each other for identical similar portion between each embodiment.For device disclosed in embodiment, set
For standby and computer readable storage medium, since it is corresponded to the methods disclosed in the examples, so the comparison of description is simple
Single, reference may be made to the description of the method.
Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure
And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is implemented in hardware or software actually, depends on the specific application and design constraint of technical solution.Profession
Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered
Think beyond the scope of this invention.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor
The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
The method and voltage conversion circuit of voltage provided by the present invention conversion are described in detail above.Herein
In apply specific case principle and implementation of the present invention are described, the explanation of above example is only intended to sides
Assistant solves the method and its core concept of the present invention.It should be pointed out that for those skilled in the art, not
, can be with several improvements and modifications are made to the present invention under the premise of being detached from the principle of the invention, these improvement and modification are also fallen into
The protection domain of the claims in the present invention.
Claims (6)
1. a kind of method of voltage conversion, which is characterized in that including：
First chip transmits first voltage to the source electrode of metal oxide semiconductcor field effect transistor；
According to the first voltage, source electrode described in the metal oxide semiconductcor field effect transistor on or off and gate it
Between channel；
According to the on or off situation in the channel between the source electrode and the gate, the metal oxide semiconductcor field effect
Transistor exports second voltage corresponding with the first voltage by base stage to the second chip.
2. according to the method described in claim 1, it is characterized in that, first chip is brilliant to metal oxide semiconductcor field effect
The source electrode of body pipe transmits first voltage：
First chip transmits high LJ voltage to the source electrode of the metal oxide semiconductcor field effect transistor.
3. according to the method described in claim 1, it is characterized in that, first chip is brilliant to metal oxide semiconductcor field effect
The source electrode of body pipe transmits first voltage：
First chip transmits low LJ voltage to the source electrode of the metal oxide semiconductcor field effect transistor.
4. a kind of voltage conversion circuit, which is characterized in that the circuit includes：
First chip, for transmitting first voltage to the source electrode of metal oxide semiconductcor field effect transistor；
Metal oxide semiconductcor field effect transistor, for according to the first voltage, source electrode and gate described on or off
Between channel；And according to the on or off situation according to the channel between the source electrode and the gate, by base stage to
Second chip exports second voltage corresponding with the first voltage；
Second chip, for receiving the second voltage.
5. voltage conversion circuit according to claim 4, which is characterized in that first chip is specifically used for：
High LJ voltage is transmitted to the source electrode of the metal oxide semiconductcor field effect transistor or is aoxidized to the metal
The source electrode of object semiconductcor field effect transistor transmits low LJ voltage.
6. voltage conversion circuit according to claim 5, which is characterized in that the metal oxide semiconductcor field effect crystal
Pipe is specially double metal oxide semiconductor field-effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810161500.1A CN108390671A (en) | 2018-02-27 | 2018-02-27 | A kind of method and voltage conversion circuit of voltage conversion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810161500.1A CN108390671A (en) | 2018-02-27 | 2018-02-27 | A kind of method and voltage conversion circuit of voltage conversion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108390671A true CN108390671A (en) | 2018-08-10 |
Family
ID=63069880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810161500.1A Pending CN108390671A (en) | 2018-02-27 | 2018-02-27 | A kind of method and voltage conversion circuit of voltage conversion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108390671A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109960393A (en) * | 2019-03-25 | 2019-07-02 | 苏州浪潮智能科技有限公司 | A kind of voltage conversion method based on CPLD/FPGA, equipment and storage medium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731678A (en) * | 2004-08-07 | 2006-02-08 | 鸿富锦精密工业（深圳）有限公司 | The signal potential change-over circuit |
| CN101291147A (en) * | 2007-04-18 | 2008-10-22 | 联发科技股份有限公司 | Emulated level converter |
| US20100026359A1 (en) * | 2008-08-01 | 2010-02-04 | Analog Devices, Inc. | Interface circuit for bridging voltage domains |
| CN202602615U (en) * | 2012-03-07 | 2012-12-12 | 快捷半导体(苏州)有限公司 | Control circuit of rail-to-rail enable signals and electric level conversion circuit |
| US20150130528A1 (en) * | 2013-11-12 | 2015-05-14 | Stmicroelectronics International N.V. | Wide range core supply compatible level shifter circuit |
| KR20170009181A (en) * | 2015-07-16 | 2017-01-25 | 에스케이하이닉스 주식회사 | Level shift circuit |
-
2018
- 2018-02-27 CN CN201810161500.1A patent/CN108390671A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731678A (en) * | 2004-08-07 | 2006-02-08 | 鸿富锦精密工业（深圳）有限公司 | The signal potential change-over circuit |
| CN101291147A (en) * | 2007-04-18 | 2008-10-22 | 联发科技股份有限公司 | Emulated level converter |
| US20100026359A1 (en) * | 2008-08-01 | 2010-02-04 | Analog Devices, Inc. | Interface circuit for bridging voltage domains |
| CN202602615U (en) * | 2012-03-07 | 2012-12-12 | 快捷半导体(苏州)有限公司 | Control circuit of rail-to-rail enable signals and electric level conversion circuit |
| US20150130528A1 (en) * | 2013-11-12 | 2015-05-14 | Stmicroelectronics International N.V. | Wide range core supply compatible level shifter circuit |
| KR20170009181A (en) * | 2015-07-16 | 2017-01-25 | 에스케이하이닉스 주식회사 | Level shift circuit |
Non-Patent Citations (1)
| Title |
|---|
| SAM ABDEH: "MOSFET封装进步帮助提供超前于芯片组路线图的移动功能", 《设计应用》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109960393A (en) * | 2019-03-25 | 2019-07-02 | 苏州浪潮智能科技有限公司 | A kind of voltage conversion method based on CPLD/FPGA, equipment and storage medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11114945B2 (en) | Secondary-controlled active clamp implementation for improved efficiency | |
| US9490781B2 (en) | Redundant clock transition tolerant latch circuit | |
| CN109637565A (en) | Memory cell | |
| US9160166B2 (en) | Charge pump for low power consumption apparatus and associated methods | |
| TWI439851B (en) | Low power consumption circuit and method for reducing power consumption | |
| CN108390428A (en) | Charging circuit and mobile terminal | |
| CN104168012B (en) | Voltage level shifter and its system of realization | |
| CN108390671A (en) | A kind of method and voltage conversion circuit of voltage conversion | |
| CN108599130A (en) | A kind of esd protection circuit and its implementation with reverse-connection preventing circuit | |
| CN214101345U (en) | Level conversion structure supporting wide level range high-speed data | |
| CN107395180A (en) | The enabled circuit of power down delay | |
| CN208353315U (en) | Substrate switching circuit for li-ion cell protection | |
| CN209676211U (en) | Level shifting circuit with power down latch function | |
| CN101207277A (en) | Electrical fuse circuit | |
| CN103856204A (en) | Integrated circuit, integrated circuit starting method and voltage selection circuit | |
| US20230378877A1 (en) | Drive scheme for secondary-controlled active clamp flyback (acf) mode | |
| CN206181001U (en) | Take integrated circuit of multiplexing pin | |
| CN108762455A (en) | A kind of chip power-on reset circuit | |
| CN112462131B (en) | Mains supply zero-crossing detection circuit and non-isolated power supply system using same | |
| CN108933592A (en) | high-speed level conversion circuit, level conversion method and data transmission device | |
| CN203911896U (en) | Output level compatible circuit of programmable chip | |
| CN209543335U (en) | A kind of circuit of the address HRP-configured slave device I2C | |
| CN106656164A (en) | High-level selection circuit and electronic system | |
| CN107437894A (en) | Overvoltage protection | |
| CN110164495A (en) | Reduce the quiescent dissipation circuit of LPDRAM under deep power down mode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180810 |