CN108388036A - A kind of manufacturing method for repairing the material of glass substrate, the method for repairing glass substrate and array substrate - Google Patents

A kind of manufacturing method for repairing the material of glass substrate, the method for repairing glass substrate and array substrate Download PDF

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Publication number
CN108388036A
CN108388036A CN201810177550.9A CN201810177550A CN108388036A CN 108388036 A CN108388036 A CN 108388036A CN 201810177550 A CN201810177550 A CN 201810177550A CN 108388036 A CN108388036 A CN 108388036A
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China
Prior art keywords
glass substrate
sio
sol
repairing
colloidal sol
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CN201810177550.9A
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CN108388036B (en
Inventor
张东徽
尹浩
陈川
马小叶
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to CN201810177550.9A priority Critical patent/CN108388036B/en
Publication of CN108388036A publication Critical patent/CN108388036A/en
Priority to US16/129,556 priority patent/US10644033B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/25—Oxides by deposition from the liquid phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Surface Treatment Of Glass (AREA)

Abstract

The present invention relates to a kind of material being used to repair glass substrate, the manufacturing methods of the method for repairing glass substrate and array substrate.The material includes SiO2Colloidal sol.Method for repairing glass substrate includes：At least the first sol material is coated in the pit of the glass substrate, wherein first sol material includes SiO2Colloidal sol；And dry first sol material.

Description

It is a kind of for repair the material of glass substrate, the method for repairing glass substrate and The manufacturing method of array substrate
Technical field
The embodiment of the present invention is related to glass substrate technical field, more specifically it relates to a kind of for repairing glass substrate Material, the method for repairing glass substrate and array substrate manufacturing method.
Background technology
TFT-LCD (Thin Film Transistor-Liquid Crystal Display) display generally use glass Glass substrate.In the manufacturing process of display, need to keep the surface of glass substrate flat as much as possible, so that it is guaranteed that can be The film layer of high quality is formed on glass substrate.
Invention content
The embodiment provides a kind of material for repairing glass substrate, the methods for repairing glass substrate With the manufacturing method of array substrate, the conductive layer to be formed on the glass substrate can be reduced, undesirable possibility of opening a way occurs, and Improve the optical property of glass substrate.
According to the first aspect of the invention, a kind of material for repairing glass substrate is provided.The material includes SiO2It is molten Glue.
In an embodiment of the present invention, the SiO2SiO in colloidal sol2A concentration of 0.01g/ml.
In an embodiment of the present invention, the SiO2Colloidal sol is by mixing absolute ethyl alcohol, ammonium hydroxide and ethyl orthosilicate It prepares.
In an embodiment of the present invention, the molar ratio of ammonium hydroxide and ethyl orthosilicate is 4:1.
According to the second aspect of the invention, a kind of method for repairing glass substrate is provided.This method includes：At least exist The pit of the glass substrate coats the first sol material, and first sol material includes SiO2Colloidal sol；And dry institute State the first sol material.
In an embodiment of the present invention, the SiO2SiO in colloidal sol2A concentration of 0.01g/ml.
In an embodiment of the present invention, the SiO2Colloidal sol is by mixing absolute ethyl alcohol, ammonium hydroxide and ethyl orthosilicate It prepares.
In an embodiment of the present invention, the molar ratio of ammonium hydroxide and ethyl orthosilicate is 4:1.
In an embodiment of the present invention, the SiO2SiO in colloidal sol2Micelle is negatively charged.
In an embodiment of the present invention, the SiO2The pH value of colloidal sol is 7.5.
In an embodiment of the present invention, the method further includes：Before coating first sol material, to be coated The second sol material is coated at the position of first sol material.Second sol material includes positively charged micelle.
In an embodiment of the present invention, the positively charged micelle includes alkali metal cation.
In an embodiment of the present invention, the positively charged micelle includes kayexalate micelle.
In an embodiment of the present invention, the temperature of the drying is 250 DEG C.
According to the third aspect of the invention we, a kind of manufacturing method of array substrate is provided, this method is included in the present invention's The method for repairing glass substrate described in second aspect.
The further aspect and range of adaptability become apparent from description provided herein.It should be appreciated that the application Various aspects can combine implementation individually or with other one or more aspects.It is also understood that description herein and The purpose that specific embodiment is intended to only illustrate is not intended to limit scope of the present application.
Description of the drawings
Attached drawing described herein is for the purpose only to the explanation of selected embodiment, not all possible reality Mode is applied, and is not intended to be limited to scope of the present application, wherein：
Fig. 1 is to show the flow chart according to an embodiment of the invention for repairing the method for glass substrate；
Fig. 2 a to 2b are to show the schematic diagram according to an embodiment of the invention for forming sol material on the glass substrate；
Fig. 3 is to show the flow chart according to an embodiment of the invention for repairing the method for glass substrate；
Fig. 4 a to 4c are to show the schematic diagram according to an embodiment of the invention for forming sol material on the glass substrate；
Fig. 5 is the schematic diagram for showing to be formed conductive layer on a kind of glass substrate；And
Fig. 6 is the schematic diagram for showing to be formed conductive layer on glass substrate according to an embodiment of the invention.
Through each view of these attached drawings, corresponding Ref. No. indicates corresponding component or feature.
Specific implementation mode
Firstly, it is necessary to explanation, unless in addition it is manifestly intended that otherwise in this paper and appended claims in context Used in word singulative include plural number, vice versa.Thus, when referring to odd number, generally include corresponding term Plural number.Similarly, wording "comprising" and " comprising " shall be interpreted as being included rather than exclusively.Similarly, term " packet Include " and "or" should be construed as being included, unless otherwise indicated herein (translation with following different, should be noted). In place of term " example " used herein, especially when it is located at after one group of term, " example " is merely exemplary And it is illustrative, and be not construed as monopolistic or popularity.
In addition it is also necessary to explanation, when introducing the element and embodiment of the application, article " one ", "one", "the" and " described " are intended to indicate that there are one or more elements；Unless otherwise indicated, the meaning of " plurality " is two or two More than a；Term "comprising", " comprising ", " containing " and " having " are intended to inclusive and indicate that there may be remove listed elements Except other element；Term " first ", " second ", " third " etc. are only used for the purpose of description, and should not be understood as indicating Or imply relative importance and formation sequence.
The flow chart described in the present invention is only an example.Without departing from the spirit of the invention, Ke Yicun The flow chart or in which description the step of many modifications.For example, the step can carry out in a different order, Huo Zheke With addition, deletion or amendment step.These modifications are considered as a part for aspect claimed.
Exemplary embodiment is described more fully with now with reference to attached drawing.
The embodiment provides a kind of materials for repairing glass substrate, can for example repair glass substrate table The pit in face occurs undesirable possibility of opening a way so as to reduce the conductive layer to be formed on the glass substrate, and improves glass The optical property of substrate.
In an exemplary embodiment of the present invention, the material for repairing glass substrate includes SiO2Colloidal sol.
In an exemplary embodiment of the present invention, SiO2Colloidal sol is by mixing absolute ethyl alcohol, ammonium hydroxide and ethyl orthosilicate And it prepares.It should be noted that absolute ethyl alcohol is as solvent, ammonium hydroxide is as catalyst.Shown in chemical equation such as formula (1).
(C2H5O)4Si+2H2O=4C2H5OH+SiO2 (1)
In an exemplary embodiment of the present invention, the molar ratio of ammonium hydroxide and ethyl orthosilicate is 4:1.
After preparing above-mentioned mixed solution, using ethanol water by SiO2SiO in colloidal sol2Concentration is adjusted to 0.01g/ml。
Next method according to an embodiment of the invention for repairing glass substrate is described.
Fig. 1 is to show the flow chart according to an embodiment of the invention for repairing the method for glass substrate.Fig. 2 a to 2b It is that the schematic diagram according to an embodiment of the invention for forming the first sol material on the glass substrate is shown.
As shown in S11 the and Fig. 2 a in Fig. 1, the first sol material 202 is coated on glass substrate 201, wherein first is molten Glue material 202 includes SiO2Colloidal sol.Specifically, the surface of glass substrate 201 has pit 200.At least in glass substrate 201 The first sol material 202 is coated at pit 200.Optionally, as shown in Figure 2 a, on the surface of glass substrate 201 and pit The first sol material 202 is coated at 200.Film due to the layer-growth rate in pit corner higher than other parts grows speed Rate, therefore can effectively reduce the difference in height in pit edge region.
As shown in S11 the and Fig. 2 b in Fig. 1, dry first sol material 202, at least partly to planarize pit 200, from And keep the surface of the glass substrate after reparation more flat compared with the surface of preprosthetic glass substrate.
In figure 2b, the first sol material 202 forms SiO after the drying2Layer.
In an exemplary embodiment of the present invention, dry temperature is about 250 DEG C.
Next, the method for repairing glass substrate by description according to another embodiment of the invention.
Fig. 3 is to show the flow chart according to an embodiment of the invention for repairing the method for glass substrate.Fig. 4 a to 4c It is that the schematic diagram according to an embodiment of the invention for forming the first and second sol materials on the glass substrate is shown.
In this embodiment, using the electronegative SiO of micelle2Colloidal sol is as the first sol material, correspondingly, in such as Fig. 1 Shown on the basis of embodiment, the method in Fig. 3 further includes second of coating with positively charged micelle before step S11 The optional step S10 of sol material.
Since glass baseplate surface has the hydroxyl for being easy to be combined with positively charged micelle, first coating includes positively charged The colloidal sol of micelle and then re-coating include the colloidal sol of negatively charged micelle, and repair materials is contributed to be attached to the surface of glass substrate, Specifically, in this embodiment, contribute to SiO2Colloidal sol better adheres to the surface of glass substrate.
Further, positively charged grain micelle may include alkali metal cation.Electronegative SiO2Micelle can in this way Positively charged micelle further react generate silicate.With SiO2It compares, the ingredient of the silicate and glass substrate is closer, from And it can more effectively repair glass substrate.
Specific embodiments of the present invention are described below in detail.
As shown in S10 the and Fig. 4 a in Fig. 3, before coating the first sol material (being not shown in Fig. 4 a), to be coated Coating includes the second sol material 203 of positively charged micelle at the position of first sol material, as an example, positively charged glue Grain includes alkali metal cation.Specifically, the surface of glass substrate 201 has pit 200.At least in the recessed of glass substrate 201 It cheats and coats second sol material 203 at 200.Optionally, as shown in fig. 4 a, on the surface of glass substrate 201 and pit The second sol material 203 is coated at 200.
In an exemplary embodiment of the present invention, the second sol material 203 includes that kayexalate (Na PSS) is molten Glue.The Na PSS colloidal sols obtain in the following way：Na PSS and water are mixed to prepare the Na PSS water that mass fraction is 20% Solution；Then the pH value of the aqueous solution is adjusted to 7 by adding HCl.
As shown in S11 the and Fig. 4 b in Fig. 3, the first sol material 202 is coated on the second sol material 203.
In this embodiment, in order to make SiO2SiO in colloidal sol2Micelle is negatively charged, as an example, can use ammonium hydroxide will SiO2The pH value of colloidal sol is adjusted to 7.5.Specifically, SiO2Surface generates anion after hydration reaction occurs, which is attached to SiO2Around particle, to form electronegative SiO2Micelle, shown in specific chemical equation such as formula (2) and (3).
SiO2+H2O=H2SiO3 (2)
NH3·H2O+H2SiO3=HSiO3 -+NH4 ++H2O (3)
After coating the first sol material 202, the SiO in the first sol material 2022With in the second sol material 203 Kayexalate reaction generate the silicate close with the ingredient of glass substrate, Na2SiO3(chemical equation such as formula (4) It is shown).
xSiO2+19xO2+2(C8H7NaO3S)x=xNa2SiO3+2xSO2+16xCO2+7xH2O (4)
As shown in S12 the and Fig. 4 c in Fig. 3, dry first sol material 202 and the second sol material 203 obtain final Silicate layer 204.
In an exemplary embodiment of the present invention, dry temperature is about 250 DEG C.
In an embodiment of the present invention, a kind of manufacturing method of array substrate is additionally provided comprising above-mentioned for repairing The method of substrate.
Fig. 5 is the schematic diagram for showing to be formed conductive layer on a kind of glass substrate.Fig. 6 is shown in reality according to the present invention Apply the schematic diagram that conductive layer is formed on the glass substrate of example.
As shown in figure 5, when forming conductive layer 205 on the glass substrate 201 that do not repair, due to the table of glass substrate 201 There are pits 200, conductive layer 205 can cause to be broken in the edge of pit 200 on face.
As shown in fig. 6, when forming conductive layer 205 on glass substrate 201 after reparation according to an embodiment of the invention, Pit 200 is planarized due to the use of the first sol material 202 or using the first and second sol materials 202,203, reduces base Difference in height of the plate at pit edge, so as to form continuous conductive layer 205.
In an exemplary embodiment of the present invention, conductive layer 205 for example can be grid layer or source-drain electrode layer.
The embodiment provides a kind of material for repairing glass substrate, the methods for repairing glass substrate With the manufacturing method of array substrate, the pit of glass baseplate surface can be repaired, particularly, glass substrate can be effectively reduced and existed Difference in height at pit edge, so as to reduce the material layer to form conductive layer on the glass substrate etc. on pit side The possibility being broken at edge, and improve the optical property of glass substrate.
The foregoing description of embodiment is provided above for the purpose of illustration and description.It is not intended to it is exhaustive or Limit the application.The each element or feature of specific embodiment is typically not limited to specific embodiment, still, in suitable situation Under, these elements and be characterized in it is interchangeable and can be used in selected embodiment in, even if being not shown or described in detail. It can also equally be varied in many ways.This change is not to be regarded as a departure from the application, and all such modifications are all Including within the scope of application.

Claims (15)

1. a kind of material for repairing glass substrate, wherein the material includes SiO2Colloidal sol.
2. material according to claim 1, wherein the SiO2SiO in colloidal sol2A concentration of 0.01g/ml.
3. material according to claim 2, wherein the SiO2Colloidal sol is by by absolute ethyl alcohol, ammonium hydroxide and ethyl orthosilicate It mixes and prepares.
4. material according to claim 3, wherein the molar ratio of ammonium hydroxide and ethyl orthosilicate is 4:1.
5. a kind of method for repairing glass substrate, including：
At least the first sol material is coated in the pit of the glass substrate, wherein first sol material includes SiO2It is molten Glue；And
Dry first sol material.
6. according to the method described in claim 5, wherein, the SiO2SiO in colloidal sol2A concentration of 0.01g/ml.
7. according to the method described in claim 5, wherein, the SiO2Colloidal sol is by by absolute ethyl alcohol, ammonium hydroxide and ethyl orthosilicate It mixes and prepares.
8. according to the method described in claim 7, wherein, the molar ratio of ammonium hydroxide and ethyl orthosilicate is 4:1.
9. according to the method described in claim 8, wherein, the SiO2SiO in colloidal sol2Micelle is negatively charged.
10. according to the method described in claim 9, wherein, the SiO2The pH value of colloidal sol is 7.5.
11. according to the method described in claim 9, further including：Before coating first sol material, to be coated described The second sol material is coated at the position of first sol material, wherein second sol material includes positively charged micelle.
12. according to the method for claim 11, wherein the positively charged micelle includes alkali metal cation.
13. according to the method for claim 11, wherein the positively charged micelle includes kayexalate micelle.
14. according to the method described in claim 5, wherein, the temperature of the drying is 250 DEG C.
15. being used to repair glass substrate described in any one of a kind of manufacturing method, including claim 5 to 14 of array substrate Method.
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