CN108369912B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN108369912B
CN108369912B CN201580085210.8A CN201580085210A CN108369912B CN 108369912 B CN108369912 B CN 108369912B CN 201580085210 A CN201580085210 A CN 201580085210A CN 108369912 B CN108369912 B CN 108369912B
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metal film
semiconductor device
organic protective
protective film
aluminum electrode
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CN108369912A (zh
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浜口卓也
中田洋辅
中野诚也
多留谷政良
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Mitsubishi Electric Corp
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Abstract

在半导体衬底(1)之上形成有铝电极(2)。焊料连接用的金属膜(3)形成于铝电极(2)之上。有机保护膜(4)在铝电极(2)之上与金属膜(3)分离地形成。有机保护膜(4)与金属膜(3)的间隔大于或等于有机保护膜(4)的厚度的一半。由此，即使在烧结接合时有机保护膜(4)发生变形，其应力也不会传递至金属膜(3)。因此，能够防止焊料连接用的金属膜(3)破裂。

Description

半导体装置及其制造方法
技术领域
本发明涉及能够防止焊料连接用的金属膜破裂的半导体装置及其制造方法。
背景技术
就功率循环寿命优异且需要高可靠性的半导体装置而言，在半导体衬底之上形成焊料接合用的金属膜(例如，参照专利文献1)。
专利文献1：日本特开2012-253058号公报
发明内容
在使半导体装置的背面电极与绝缘基板的电路图案烧结接合时，从半导体装置的表面侧进行加压。通常，就有机保护膜而言，为了避免由于晶片工艺或模块组装工序中的外部应力、来自模块的封装材料的应力等而破裂，优选使用杨氏模量低的材料。例如，通过将杨氏模量3GPa左右的聚酰亚胺形成大于或等于5μm，从而能够使其作为保护膜起作用。特别是，如果在晶片工艺中途有机保护膜破裂，则在之后的镀敷工序中镀敷膜会从破裂的部位异常生长，导致成品率的降低或晶片工艺污染，因此保护膜优选选定杨氏模量低且不易破裂的材料。但是，由于与焊料接合用的金属膜相比杨氏模量(同轴方向的应变和应力的比例常数)低，因此有机保护膜会由于模块组装工序时的Ag烧结的加压而发生变形。就现有的半导体装置而言，有机保护膜与焊料接合用的金属膜接触，因此存在金属膜的端部由于发生了变形的有机保护膜的应力而破裂这样的问题。
本发明就是为了解决上述课题而提出的，其目的在于得到能够防止焊料连接用的金属膜破裂的半导体装置及其制造方法。
本发明涉及的半导体装置的特征在于，具有：半导体衬底；铝电极，其形成于所述半导体衬底之上；焊料连接用的金属膜，其形成于所述铝电极之上；以及有机保护膜，其形成于所述铝电极之上，与所述金属膜分离，所述有机保护膜与所述金属膜的间隔大于或等于所述有机保护膜的厚度的一半。
发明的效果
在本发明中，有机保护膜与金属膜分离，两者的间隔大于或等于有机保护膜的厚度的一半。由此，即使在烧结接合时有机保护膜发生变形，其应力也不会传递至金属膜。因此，能够防止焊料连接用的金属膜破裂。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的剖视图。
图2是表示使图1示出的半导体装置与绝缘基板的电路图案烧结接合的情形的剖视图。
图3是表示对比例涉及的半导体装置的剖视图。
图4是表示本发明的实施方式2涉及的半导体装置的剖视图。
具体实施方式
参照附图对本发明的实施方式涉及的半导体装置及其制造方法进行说明。对相同或对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1.
图1是表示本发明的实施方式1涉及的半导体装置的剖视图。半导体衬底1例如具有硅衬底和在该硅衬底之上外延生长的半导体膜。在该半导体衬底1之上形成有铝电极2。焊料连接用的金属膜3形成于铝电极2之上。有机保护膜4在铝电极2之上与金属膜3分离地形成。背面电极5形成于半导体衬底1的背面。有机保护膜4与金属膜3的间隔w大于或等于有机保护膜4的厚度t的一半(w≥t/2)。
接下来，对本实施方式涉及的半导体装置的制造方法进行说明。
图2是表示使图1示出的半导体装置与绝缘基板的电路图案烧结接合的情形的剖视图。首先，在半导体衬底1之上形成铝电极2。在铝电极2之上形成焊料连接用的金属膜3以及与金属膜3分离的有机保护膜4。在半导体衬底1的背面形成背面电极5。
然后，如图2所示，在背面电极5与绝缘基板6的电路图案7之间涂敷被有机膜包覆的Ag颗粒8，一边利用加压夹具9从表面侧对半导体衬底1进行加压一边进行加热，从而使背面电极5与电路图案7进行Ag烧结接合。
接下来，与对比例比较而对本实施方式的效果进行说明。图3是表示对比例涉及的半导体装置的剖视图。在对比例中，有机保护膜4与金属膜3接触。就有机保护膜4而言，杨氏模量为3GPa左右，通过烧结接合时的加压而发生变形，由于其应力而使金属膜3的端部破裂。
另一方面，在本实施方式中，有机保护膜4与金属膜3分离，两者的间隔大于或等于有机保护膜4的厚度的一半。由此，即使在烧结接合时有机保护膜4发生变形，其应力也不会传递至金属膜3。因此，能够防止焊料连接用的金属膜3破裂。
另外，金属膜3是相对于焊料的接合强度比铝电极2高的物质。由此，能够容易地获得良好的焊料接合界面。
另外，有机保护膜4不与焊料发生反应。由此，焊料不会浸润扩展至金属膜3与引线框的接合部以外，因此能够防止焊料厚度变薄而使接合强度降低。
另外，在背面电极5与绝缘基板6的电路图案7进行焊接的情况下，不需要从半导体衬底1的表面侧进行会使有机保护膜4发生变形的程度的加压。但是，在背面电极5与绝缘基板6的电路图案7进行烧结接合的情况下，由于加压而使有机保护膜4发生变形，因此需要本实施方式的上述结构。
另外，通过使用Ag膜作为烧结接合的接合剂，从而能够设为Cu或Ni与非金属材料的密接强度高，导电性以及散热性优异的接合部。
另外，金属膜3以Ni或Cu作为主要成分。Ni以及Cu广泛用作半导体装置的电极材料，因此能够实现稳定的生产。
实施方式2.
图4是表示本发明的实施方式2涉及的半导体装置的剖视图。在本实施方式中，中间层10在金属膜3与有机保护膜4之间将铝电极2覆盖。另外，中间层10是杨氏模量为195GPa左右、与有机保护膜4相比杨氏模量高、不易变形的物质，因此不会受到由有机保护膜4的变形产生的应力的影响。
在本实施方式涉及的半导体装置的制造方法中，将具有开口的中间层10形成于铝电极2之上。将该中间层10作为掩模而通过湿式镀敷法形成焊料接合用的金属膜3。通过以湿式镀敷法形成金属膜3，从而能够容易地形成比中间层10厚的金属膜。通过将金属膜3形成得厚，从而能够减轻由于焊料接合时的热负载或高温工作使Ni向焊料内扩散、膜厚减小这一情况，因此能够使高Tj耐久性的可靠性提高。
例如，使用SiN膜作为中间层10。如果将中间层10作为掩模而通过湿式镀敷法形成金属膜3，则通常会进行各向同性生长，因此如果超过中间层10的高度，则也会在水平方向上生长，能够使金属膜3的端部伸出至中间层10之上。由此，在Ag烧结时，能够主要通过金属膜3承受从半导体元件上表面方向受到的应力。虽然金属膜3会发生变形，对中间层10施加应力，但如果将SiN膜用于中间层10，则铝电极2与中间层10的密接性强，因此能够防止铝电极2与中间层10的剥离。
另外，中间层10也形成于铝电极2与有机保护膜4的端部之间。但是，不需要在铝电极2与有机保护膜4之间的所有区域形成中间层10，以有机保护膜4的端部为起点具有所期望的宽度即可。通过以上述方式局部地设置使铝电极2与有机保护膜4直接接触的部位，从而能够增强有机保护膜4的密接性，进一步提高产品的可靠性。
此外，在实施方式1、2中，半导体衬底1不限定于硅，也可以是带隙比硅大的宽带隙半导体。宽带隙半导体例如是碳化硅、氮化镓类材料或金刚石。由上述宽带隙半导体形成的半导体装置的耐电压性或容许电流密度高，因此能够实现小型化。通过使用该小型化的半导体装置，从而安装有该半导体装置的半导体模块也能够实现小型化。另外，由于半导体装置的耐热性高，因此能够使散热器的散热鳍片小型化，能够将水冷部风冷化，因此能够使半导体模块进一步小型化。另外，由于半导体装置的电力损耗低且高效率，因此能够使半导体模块高效化。
另外，半导体衬底1的背面电极5与绝缘基板6之上的电路图案7烧结接合而未使用焊料，因此能够实现导电性和散热性优异的功率模块。因此，不限定于Si制的MOSFET、IGBT以及二极管(Diode)，即使应用于要求在更高温环境下的工作结温范围的SiC产品，也能够确保功率循环耐久性等可靠性。
标号的说明
1半导体衬底，2铝电极，3金属膜，4有机保护膜，5背面电极，6绝缘基板，7电路图案，8Ag颗粒，10中间层。

Claims (13)

1.一种半导体装置，其特征在于，具有：
半导体衬底；
铝电极，其形成于所述半导体衬底之上；
焊料连接用的金属膜，其形成于所述铝电极之上；以及
有机保护膜，其形成于所述铝电极之上，与所述金属膜分离，
所述有机保护膜与所述金属膜的间隔大于或等于所述有机保护膜的厚度的一半。
2.根据权利要求1所述的半导体装置，其特征在于，
所述金属膜是相对于焊料的接合强度比所述铝电极高、比所述铝电极硬的物质。
3.根据权利要求1或2所述的半导体装置，其特征在于，
所述有机保护膜是杨氏模量比所述铝电极低的物质。
4.根据权利要求1或2所述的半导体装置，其特征在于，
还具有中间层，该中间层在所述金属膜与所述有机保护膜之间将所述铝电极覆盖，是杨氏模量比所述有机保护膜高的物质。
5.根据权利要求4所述的半导体装置，其特征在于，
所述金属膜的端部伸出至所述中间层之上。
6.根据权利要求4所述的半导体装置，其特征在于，
所述中间层也形成于所述铝电极与所述有机保护膜的端部之间。
7.根据权利要求4所述的半导体装置，其特征在于，
所述金属膜是将所述中间层作为掩模而通过镀敷法形成的。
8.根据权利要求1或2所述的半导体装置，其特征在于，还具有：
背面电极，其形成于所述半导体衬底的背面；以及
绝缘基板，其具有电路图案，
所述背面电极与所述绝缘基板的所述电路图案进行烧结接合。
9.根据权利要求8所述的半导体装置，其特征在于，
还具有Ag膜作为烧结接合的接合剂。
10.根据权利要求1或2所述的半导体装置，其特征在于，
所述金属膜以Ni或Cu作为主要成分。
11.根据权利要求1或2所述的半导体装置，其特征在于，
所述半导体衬底是宽带隙半导体。
12.一种半导体装置的制造方法，其特征在于，具有下述工序：
在半导体衬底之上形成铝电极的工序；
在所述铝电极之上形成焊料连接用的金属膜以及与所述金属膜分离的有机保护膜的工序；
在所述半导体衬底的背面形成背面电极的工序；以及
在所述背面电极与绝缘基板的电路图案之间涂敷Ag颗粒，从表面侧对所述半导体衬底进行加压，从而使所述背面电极与所述电路图案进行Ag烧结接合的工序，
所述有机保护膜与所述金属膜的间隔大于或等于所述有机保护膜的厚度的一半。
13.根据权利要求12所述的半导体装置的制造方法，其特征在于，还具有下述工序：
将具有开口的中间层形成于所述铝电极之上的工序；以及
将所述中间层作为掩模而通过镀敷法形成所述金属膜的工序，
所述中间层在所述金属膜与所述有机保护膜之间将所述铝电极覆盖，是杨氏模量比所述有机保护膜高的物质。
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