CN108364870B - 改善栅极氧化层质量的屏蔽栅沟槽mosfet制造方法 - Google Patents
改善栅极氧化层质量的屏蔽栅沟槽mosfet制造方法 Download PDFInfo
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- CN108364870B CN108364870B CN201810062556.1A CN201810062556A CN108364870B CN 108364870 B CN108364870 B CN 108364870B CN 201810062556 A CN201810062556 A CN 201810062556A CN 108364870 B CN108364870 B CN 108364870B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 230000005669 field effect Effects 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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CN201810062556.1A CN108364870B (zh) | 2018-01-23 | 2018-01-23 | 改善栅极氧化层质量的屏蔽栅沟槽mosfet制造方法 |
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CN112864248A (zh) * | 2019-11-28 | 2021-05-28 | 南通尚阳通集成电路有限公司 | Sgtmosfet器件及制造方法 |
CN111276394B (zh) * | 2020-02-18 | 2022-09-23 | 捷捷微电(上海)科技有限公司 | 一种分离栅mosfet的制作方法 |
CN111463282B (zh) * | 2020-03-30 | 2023-09-26 | 南京华瑞微集成电路有限公司 | 集成启动管和采样管的低压超结dmos结构及制备方法 |
CN111446157A (zh) * | 2020-04-07 | 2020-07-24 | 中芯集成电路制造(绍兴)有限公司 | 屏蔽栅场效应晶体管及其形成方法 |
CN112185816B (zh) * | 2020-08-14 | 2022-04-08 | 江苏东海半导体股份有限公司 | 一种高能效屏蔽栅沟槽mosfet及其制造方法 |
CN112133637B (zh) * | 2020-11-30 | 2021-02-12 | 中芯集成电路制造(绍兴)有限公司 | 具有屏蔽栅沟槽的半导体器件的制造方法 |
CN112908841B (zh) * | 2021-03-24 | 2024-03-22 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制备方法 |
CN113471078A (zh) * | 2021-06-11 | 2021-10-01 | 上海格瑞宝电子有限公司 | 一种sgt-mosfet及其制造方法 |
CN113725078A (zh) * | 2021-09-11 | 2021-11-30 | 捷捷微电(上海)科技有限公司 | 一种分离栅mosfet的制作方法 |
CN118073186A (zh) * | 2022-11-22 | 2024-05-24 | 华润微电子(重庆)有限公司 | 一种屏蔽栅功率mosfet及其制作方法 |
CN116053315A (zh) * | 2023-02-16 | 2023-05-02 | 捷捷微电(南通)科技有限公司 | 一种sgt器件制作方法 |
CN116344622A (zh) * | 2023-05-25 | 2023-06-27 | 成都吉莱芯科技有限公司 | 一种低输出电容的sgt mosfet器件及制作方法 |
CN117457499A (zh) * | 2023-11-01 | 2024-01-26 | 中晶新源(上海)半导体有限公司 | 一种改善屏蔽栅功率半导体器件hdp填充的工艺方法 |
CN117524878A (zh) * | 2023-11-13 | 2024-02-06 | 中晶新源(上海)半导体有限公司 | 一种sgt-mosfet的制作方法 |
CN117410173B (zh) * | 2023-12-15 | 2024-03-08 | 中晶新源(上海)半导体有限公司 | 一种阶梯介质层的沟槽半导体器件的制作方法 |
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CN101315893A (zh) * | 2007-05-30 | 2008-12-03 | 上海华虹Nec电子有限公司 | 沟槽型双层栅功率mos结构实现方法 |
CN105914234A (zh) * | 2016-06-28 | 2016-08-31 | 上海华虹宏力半导体制造有限公司 | 分离栅功率mos管结构及制作方法 |
CN106206322A (zh) * | 2016-08-30 | 2016-12-07 | 西安龙腾新能源科技发展有限公司 | 自对准低压超结mofet的制造方法 |
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US7652326B2 (en) * | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
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CN101315893A (zh) * | 2007-05-30 | 2008-12-03 | 上海华虹Nec电子有限公司 | 沟槽型双层栅功率mos结构实现方法 |
CN105914234A (zh) * | 2016-06-28 | 2016-08-31 | 上海华虹宏力半导体制造有限公司 | 分离栅功率mos管结构及制作方法 |
CN106206322A (zh) * | 2016-08-30 | 2016-12-07 | 西安龙腾新能源科技发展有限公司 | 自对准低压超结mofet的制造方法 |
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