CN108352344B - 用于毫秒退火***的流体泄漏检测 - Google Patents
用于毫秒退火***的流体泄漏检测 Download PDFInfo
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- CN108352344B CN108352344B CN201680063481.8A CN201680063481A CN108352344B CN 108352344 B CN108352344 B CN 108352344B CN 201680063481 A CN201680063481 A CN 201680063481A CN 108352344 B CN108352344 B CN 108352344B
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- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
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- 239000012498 ultrapure water Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 239000002826 coolant Substances 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
- G01M3/20—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562272849P | 2015-12-30 | 2015-12-30 | |
US62/272,849 | 2015-12-30 | ||
PCT/US2016/066344 WO2017116686A1 (en) | 2015-12-30 | 2016-12-13 | Fluid leakage detection for a millisecond anneal system |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108352344A CN108352344A (zh) | 2018-07-31 |
CN108352344B true CN108352344B (zh) | 2022-01-04 |
Family
ID=59225815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680063481.8A Active CN108352344B (zh) | 2015-12-30 | 2016-12-13 | 用于毫秒退火***的流体泄漏检测 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10359334B2 (zh) |
KR (1) | KR102079543B1 (zh) |
CN (1) | CN108352344B (zh) |
TW (1) | TWI698631B (zh) |
WO (1) | WO2017116686A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10395955B2 (en) * | 2017-02-15 | 2019-08-27 | Globalfoundries Singapore Pte. Ltd. | Method and system for detecting a coolant leak in a dry process chamber wafer chuck |
US11056365B2 (en) * | 2017-09-27 | 2021-07-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fault detection method in semiconductor fabrication facility |
US10643867B2 (en) * | 2017-11-03 | 2020-05-05 | Applied Materials, Inc. | Annealing system and method |
KR102170028B1 (ko) * | 2018-11-27 | 2020-10-26 | 한국원자력연구원 | 습도센서 센서튜브 및 이를 이용한 습도센서 어셈블리 |
US20210043478A1 (en) * | 2019-08-07 | 2021-02-11 | Samsung Electronics Co., Ltd. | Pressure heating apparatus |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101371331A (zh) * | 2005-12-06 | 2009-02-18 | 普莱克斯技术有限公司 | 磁性退火工具热交换***及处理工艺 |
CN104541061A (zh) * | 2012-07-19 | 2015-04-22 | 阿迪克森真空产品公司 | 用于泵浦加工室的方法和设备 |
CN104871299A (zh) * | 2013-01-16 | 2015-08-26 | 应用材料公司 | 使用高温计对锥形灯头内的灯进行的多区域控制 |
Family Cites Families (15)
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US6204203B1 (en) | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
JP2000150360A (ja) * | 1998-11-05 | 2000-05-30 | Tokyo Electron Ltd | 基板処理装置 |
US6485203B2 (en) | 1999-12-20 | 2002-11-26 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
US7442415B2 (en) | 2003-04-11 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US7790633B1 (en) | 2004-10-26 | 2010-09-07 | Novellus Systems, Inc. | Sequential deposition/anneal film densification method |
KR101610269B1 (ko) * | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
GB2478674B (en) * | 2009-01-06 | 2014-05-07 | Access Business Group Int Llc | Smart cookware |
KR101236810B1 (ko) | 2009-11-16 | 2013-02-25 | 세메스 주식회사 | 기판 이송 장치 및 이를 구비하는 기판 처리 장치 그리고 그의 처리 방법 |
KR101780789B1 (ko) * | 2010-03-15 | 2017-09-22 | 삼성전자주식회사 | 기판 이송 용기, 가스 퍼지 모니터링 툴, 그리고 이들을 구비한 반도체 제조 설비 |
US20120090383A1 (en) * | 2010-10-14 | 2012-04-19 | Audra Lopez | System and method for detecting a refrigerant leak and chemicals produced as a result of heating of the refrigerant |
US8809175B2 (en) | 2011-07-15 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of anneal after deposition of gate layers |
US9004279B2 (en) * | 2012-07-24 | 2015-04-14 | Illinois Tool Works Inc. | Pill container carrier |
US9093468B2 (en) | 2013-03-13 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regions |
US20150140838A1 (en) | 2013-11-19 | 2015-05-21 | Intermolecular Inc. | Two Step Deposition of High-k Gate Dielectric Materials |
-
2016
- 2016-12-13 US US15/377,217 patent/US10359334B2/en active Active
- 2016-12-13 WO PCT/US2016/066344 patent/WO2017116686A1/en active Application Filing
- 2016-12-13 KR KR1020187011209A patent/KR102079543B1/ko active IP Right Grant
- 2016-12-13 CN CN201680063481.8A patent/CN108352344B/zh active Active
- 2016-12-21 TW TW105142452A patent/TWI698631B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101371331A (zh) * | 2005-12-06 | 2009-02-18 | 普莱克斯技术有限公司 | 磁性退火工具热交换***及处理工艺 |
CN104541061A (zh) * | 2012-07-19 | 2015-04-22 | 阿迪克森真空产品公司 | 用于泵浦加工室的方法和设备 |
CN104871299A (zh) * | 2013-01-16 | 2015-08-26 | 应用材料公司 | 使用高温计对锥形灯头内的灯进行的多区域控制 |
Also Published As
Publication number | Publication date |
---|---|
TWI698631B (zh) | 2020-07-11 |
US10359334B2 (en) | 2019-07-23 |
KR102079543B1 (ko) | 2020-02-20 |
CN108352344A (zh) | 2018-07-31 |
KR20180049120A (ko) | 2018-05-10 |
WO2017116686A1 (en) | 2017-07-06 |
US20170191897A1 (en) | 2017-07-06 |
TW201734425A (zh) | 2017-10-01 |
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Effective date of registration: 20181206 Address after: American California Applicant after: Mattson Tech Inc. Applicant after: Beijing Yitang Semiconductor Technology Co., Ltd. Address before: American California Applicant before: Mattson Tech Inc. |
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Address after: California, USA Applicant after: MATTSON TECHNOLOGY, Inc. Applicant after: Beijing Yitang Semiconductor Technology Co.,Ltd. Address before: California, USA Applicant before: MATTSON TECHNOLOGY, Inc. Applicant before: Beijing Yitang Semiconductor Technology Co.,Ltd. |
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