CN108346645A - A kind of power module and its manufacturing method - Google Patents
A kind of power module and its manufacturing method Download PDFInfo
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- CN108346645A CN108346645A CN201710063330.9A CN201710063330A CN108346645A CN 108346645 A CN108346645 A CN 108346645A CN 201710063330 A CN201710063330 A CN 201710063330A CN 108346645 A CN108346645 A CN 108346645A
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- backlight unit
- switch tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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Abstract
The present invention provides a kind of power module and its manufacturing method, power module includes：Dielectric substrate, upper surface have the first conductive layer；Switch tube chip and diode chip for backlight unit, chip are attached on the upper surface of the dielectric substrate；Insulating layer is covered on the dielectric substrate, chip is coated in, the insulating layer offers the through-hole above chip, and conductive materials are filled in the through-hole；Second conductive layer is set on the insulating layer, and second conductive layer is electrically connected by the conductive materials and chip.Encapsulation saves production cost without opening plastic sealed mould；In addition, power semiconductor chip is realized and is electrically connected by opening up through-hole on the insulating layer and filling the conductive layer on conductive materials and upper layer, the volume of module is reduced, module miniaturization is conducive to.
Description
Technical field
The present invention relates to hydrid integrated circuit fields, more particularly to a kind of power module and its manufacturing method.
Background technology
Power semiconductor modular is the device that more semiconductor chips are packaged together by certain circuit structure.One
In a IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module, igbt chip and
Diode chip for backlight unit is integrated on one piece of common bottom plate, and the power device of module and its installation surface (i.e. heat sink) are mutual
Insulation.
Traditional power semiconductor modular plastic packaging molding needs to mold, and cost is higher；In addition, power semiconductor modular includes
The electrical interconnecting block to play a supportive role, module volume is larger, and integrated level is small.
Invention content
Present invention aims at a kind of power module of offer and its manufacturing methods, it is intended to solve traditional power semiconductor mould
Block needs to mold, and includes the electrical interconnecting block to play a supportive role, the larger problem of module volume.
The present invention provides a kind of power modules, including：
Dielectric substrate, upper surface have patterned first conductive layer；
At least one switch tube chip and at least one diode chip for backlight unit, the switch tube chip and diode chip for backlight unit are sticked
In on the upper surface of the dielectric substrate, is formed and be electrically connected with first conductive layer；
Insulating layer is covered on the dielectric substrate, the switch tube chip and diode chip for backlight unit are coated in,
The insulating layer offers the through-hole through its upper and lower surface, and conductive materials are filled in the through-hole；
Patterned second conductive layer, is set on the insulating layer, and second conductive layer passes through the conductive material
Matter is conductively connected with first conductive layer, and by the conductive materials by the switch tube chip and diode chip for backlight unit circuit
Connection.
The present invention also provides a kind of manufacturing methods of power module, include the following steps：
A upper surface, which is arranged, has the dielectric substrate of the first conductive layer；
At least one switch tube chip and at least one diode chip for backlight unit are set on first conductive layer, with described the
One conductive layer forms electrical connection；
An insulating layer is set on the first dielectric substrate, the switch tube chip and diode chip for backlight unit are coated
Inside；
Second conductive layer is set on the insulating layer, opens up the through-hole for penetrating the insulating layer and the second conductive layer, and
Conductive materials are filled in the through-hole, and second conductive layer is made to pass through the conductive materials in the through-hole and first conduction
Layer electrical connection, and switch tube chip is connected with diode chip for backlight unit circuit.
Above-mentioned power module and its encapsulation of manufacturing method module save production cost without opening plastic sealed mould；In addition, work(
Rate semiconductor chip is realized and is electrically connected by opening up through-hole on the insulating layer and filling the conductive layer on conductive materials and upper layer, is subtracted
The small volume of module is conducive to module miniaturization.
Description of the drawings
Fig. 1 is the structural schematic diagram of power module in first embodiment of the invention；
Fig. 2 is the structural schematic diagram of power module in second embodiment of the invention；
Fig. 3 is power module integral layout figure schematic diagram；
Fig. 4 is the structural schematic diagram of heat dissipation tablet in the embodiment of the present invention；
Fig. 5 is the flow chart of the manufacturing method of power module in present pre-ferred embodiments.
Specific implementation mode
In order to make technical problems, technical solutions and advantageous effects to be solved by the present invention be more clearly understood, below in conjunction with
Accompanying drawings and embodiments, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only used
To explain the present invention, it is not intended to limit the present invention.
It please refers to Fig.1 to Fig.4, the power module in present pre-ferred embodiments includes dielectric substrate 10, at least one
A switch tube chip 20, at least one diode chip for backlight unit 30, insulating layer 40 and the second conductive layer 50.
There is dielectric substrate 10 upper and lower surface being oppositely arranged, wherein at least one surface to cover metal, and middle layer is
Ceramic layer 11.In the present embodiment, the upper surface of dielectric substrate 10 covers metal and forms patterned first conductive layer 12, and under
Surface can cover metal and form another patterned conductive layer 13, and radiating fin 14 can also directly be arranged (refering to Fig. 2).
Switch tube chip 20 in the present embodiment is IGBT, diode chip for backlight unit 30 be FRD (fast recovery diode,
Fast recovery diode), power module has one or more IGBT pipes and FRD, constitutes driving circuit.Switch tube chip 20 its
Upper and lower surface all has polarity pin, and in the present embodiment, there are two polarity pins for 20 upper surface of switch tube chip tool, are door respectively
Pole and emitter, lower surface have collector.There is 30 upper surface of diode chip for backlight unit anode, lower surface to have cathode, or vice versa.
Switch tube chip 20 and diode chip for backlight unit 30 are attached on the upper surface of the dielectric substrate 10, with described the
One conductive layer 12 forms electrical connection.Specifically, circuit pattern is formed on the first conductive layer 12, switchs tube chip 20 and two poles
When tube chip 30 is attached at by way of welding or crimping on circuit pattern, polarity pin and the corresponding circuit of lower surface
Pattern forming circuit is connected to draw.
Insulating layer 40 is covered on the dielectric substrate 10, and the switch tube chip 20 and diode chip for backlight unit 30 are wrapped
In overlaying on, insulating layer 40 is covered in by way of lamination on dielectric substrate 10.Specifically, in the product, insulating layer 40
Lower surface offer for accommodate switch tube chip 20 and diode chip for backlight unit 30 groove.The predeterminated position of the insulating layer 40
It offers and is equipped with multiple through-holes 42 through its upper and lower surface, multiple through-hole 42 arrives separately at switch tube core through insulating layer 40
Piece 20, diode chip for backlight unit 30 and the second conductive layer 50, and be filled with and the switch tube chip 20, diode in the through-hole 42
The conductive materials of chip 30 and the electrical connection of the second conductive layer 50.Preferably, ensuring to tie between plated-through hole 42 and chip
Under the premise of the reliability of conjunction, the settings more as much as possible of through-hole 42 of same circuit connection path, to ensure the overcurrent energy of circuit
Power and raising chip top heat-sinking capability.
In the production process, in the present embodiment, insulating layer 40 heats and solidifies shape by prepreg (Pre-pregnant)
At the conductive materials in through-hole 42 are metallized simultaneously when, heating；Wherein, prepreg is mainly by resin and reinforcing material group
Can be glass-fiber-fabric, paper substrate, composite material etc. at, reinforcing material, the coefficient of thermal expansion of the prepreg and the switching tube
The matched coefficients of thermal expansion of chip 20 and diode chip for backlight unit 30, avoid power device due to encapsulating material coefficient of thermal expansion not
The Problem of Failure of the excessive appearance of stress caused by matching suffered by device.
Second conductive layer 50 is set on the insulating layer 40, and insulating layer 40 is located at particular by the mode of lamination is folded
On.Second conductive layer 50 passes through the conductive materials and the switch tube chip 20, diode chip for backlight unit 30 and the first conductive layer 12
Electrical connection, and connected the switch tube chip 20 with 30 circuit of diode chip for backlight unit by the conductive materials.The present embodiment
In, circuit pattern, the polarity pin of 20 upper surface of switch tube chip and corresponding circuit pattern shape are formed on the second conductive layer 50
At electrical connection to draw.In this way, switch tube chip 20 is led by being opened in the through-hole to metallize on insulating layer 40 42 with second
Electric layer 50 realizes that electrical connection, substitution electrical interconnecting block realize electrical connection, reduce the volume of module, it is small-sized to be conducive to module
Change.
Dielectric substrate 10 in listed embodiment is not limited to DBC, and (direct bond copper, cover copper ceramic base
Plate) substrate or DBA (direct bond aluminum, cover aluminium ceramic substrate) substrate, or cover gold for other any surfaces
Belong to dielectric substrate, with reference to figure 1.In additional embodiment, dielectric substrate 10 can also be that copper, another surface are covered in a surface
Radiating fin 14 is arranged covers copper ceramic substrate, with reference to figure 2.
In the present embodiment, the second conductive layer 50 is conductive metal sheet, can be specifically copper sheet, aluminium flake or other conductive golds
Belong to material to be made.In other embodiments, the second conductive layer 50 can be covered by the lower surface of another dielectric substrate
Metal is constituted.Another dielectric substrate has the upper and lower surface that is oppositely arranged, and wherein at least one surface covers metal and constitutes the
Two conductive layers 50, middle layer are ceramic layer.And upper surface can cover metal and form another conductive layer, and radiating fin can also be arranged
Piece.
Preferably, power module further includes leading-out terminal 60 (i.e. power module pin), one end of leading-out terminal 60 and institute
The first conductive layer 12 or 50 holding electrical of the second conductive layer connection are stated, and coordinates the conductive materials in the through-hole 42 electrical
Be connected on 30 corresponding polarity pin of the switch tube chip 20 and diode chip for backlight unit, the other end of the leading-out terminal 60 to
Outer stretching.Leading-out terminal 60 will be for that will switch tube chip 20 and diode chip for backlight unit 30 in the form of preinstalled circuit by the terminal of circuit
Extraction connect for use as with external circuit.Leading-out terminal 60 can be fixed on the first conductive layer 12, can also be fixed on second
On conductive layer 50.
In the present embodiment, illustrate so that leading-out terminal 60 is fixed on the first conductive layer 12 as an example.Leading-out terminal 60 includes control
Terminal 62 and power terminal 61, power terminal 61 include emitter power terminal 61A and Power of collector terminal 61B, and described the
One conductive layer 12 includes the first circuit pattern 121 and second circuit pattern 122 positioned at power module opposite sides, the first circuit
Pattern 121 includes the emitter pad 121A sum aggregate electrode pads 121B for carrying the same side for being disposed side by side on power module.It is described
Switch the polarity pin of tube chip 20 and 30 lower surface of diode chip for backlight unit and the collector pad 121B electricity of the first circuit pattern 121
Gas connects, and Power of collector terminal 61B is electrically connected with collector pad 121B；The switch tube chip 20 and diode chip for backlight unit
The polarity pin of 30 upper surfaces is divided by conductive materials in the corresponding through-hole 42 and second conductive layer 50 respectively
It is not connected electrically to the emitter pad 121A and second circuit pattern 122 of first circuit pattern 121, the control terminal
62, emitter power terminal 61A respectively with second circuit pattern 122, the emitter pad 121A of first circuit pattern 121
Welding.It can be understood that second circuit pattern 122 is also pin pad.
More specifically, the second conductive layer 50 includes tertiary circuit pattern 51 and the 4th circuit pattern 52, the first circuit pattern
121 are connected to switch tube chip 20 and diode by conductive materials in the corresponding through-hole 42 and tertiary circuit pattern 51
The polarity pin of 30 upper surface of chip.Second circuit pattern 122 passes through the conductive materials and the 4th in the corresponding through-hole 42
Circuit pattern 52 is connected to the polarity pin of 20 upper surface of switch tube chip.In the present embodiment, tube chip 20 and the first electricity are switched
Road pattern 121 be electrically connected be emitter, with second circuit pattern 122 be electrically connected be gate pole, with intermediate circuit pattern
123 electrical connections are collectors.
Fig. 3 is power module integral layout figure schematic diagram.Filling region is 12 generally shown figure of the first conductive layer in figure
Change, it is that the second conductive layer 50 is generally shown graphical that wire frame, which blackens region,.Switch tube chip 20 and diode chip for backlight unit 30 are welded on
First conductive layer, 12 corresponding position, control terminal 62 and power terminal 61 are also welded to 12 corresponding position of the first conductive layer, via
The through-hole 42 of metallization is so that chip polarity forms electrical connection with corresponding terminal.Control terminal 62 and power terminal 61 distinguish position
In module both sides, low voltage control end reduces electrical Interference of the high-pressure side to low-pressure end far from high-voltage power end, improves control
The reliability at end.
Preferably, please refer to Fig.1,2 and 3, power module further includes radiator 70, and the insulation is arranged in the radiator 70
The lower surface of medium substrate 10 and/or the upper surface of second conductive layer 50.Radiator 70 can be by covering metal-insulator medium base
Plate 10 directly constitutes (such as radiating fin 14), also external can separately be arranged.Radiator 70 can be provided separately within power module following table
Face may also be arranged on power module upper and lower surface and realize two-side radiation.Specifically, the lower surface of dielectric substrate 10 and/or
The upper surface of second conductive layer 50 is connect by the way that thermal plastic insulation is after 80s with radiator 70.Radiator 70 be radiating fin or
Flat-plate heat pipe.Fig. 4 is flat-plate heat pipe schematic diagram.What switch tube chip 20 and diode chip for backlight unit 30 generated is thermally conducted to heat pipe evaporation
Face 71, working solution 72 absorbs heat and vaporizes and be full of vapor chamber in capillary.The cryosurface 73 of flat-plate heat pipe 70 is cold using recycling
But liquid is cooled down.Steam 90 is in 73 regelation of cryosurface at liquid, and under the hair suction of capillary wick 74, liquid is again
Evaporating surface 71 is flowed back to, repeats the above steps and realizes circulation cooling.
In addition, incorporated by reference to Fig. 1 to Fig. 5, a kind of manufacturing method manufacturing above-mentioned power module is also disclosed, including following
Step：
Step S110, one upper surface of setting have the dielectric substrate 10 of the first conductive layer 12.
In this step, the dielectric substrate 10 provided should have the upper and lower surface that is oppositely arranged, and wherein at least one
Cover metal in a surface.In the present embodiment, the upper surface of dielectric substrate 10 covers metal and forms patterned first conductive layer 12,
And lower surface can cover metal and form another conductive layer, and radiating fin 14 can also be arranged (refering to Fig. 3)；Also, first leads
Corresponding circuit pattern should be preset in electric layer 12.
It is conductive to be set to described first by step S120 at least one switch tube chip 20 and at least one diode chip for backlight unit 30
On layer 12, is formed and be electrically connected with first conductive layer 12.
Specifically, switch tube chip 20 is IGBT, and diode chip for backlight unit 30 is FRD.Chip upper and lower surface all has polarity and draws
Foot, switch tube chip 20 are attached on the upper surface of the dielectric substrate 10, are formed electrically with first conductive layer 12
Connection.Specifically, it switchs tube chip 20 and diode chip for backlight unit 30 is attached at the first conductive layer 12 by way of welding or crimping
Circuit pattern on when, the polarity pin of lower surface and corresponding circuit pattern form circuit and connect to draw.
An insulating layer 40 is arranged on the first dielectric substrate 10 in step S130, by the switch tube chip 20
It is coated on diode chip for backlight unit 30 interior.
In the present embodiment, the insulating layer 40 is prepreg, and prepreg is insulation, and its coefficient of thermal expansion need to use up
The matched coefficients of thermal expansion of amount and switch tube chip 20.
The second conductive layer 50 is arranged in step S140 on the insulating layer 40.Second conductive layer 50 is preferably conductive metal
Piece.By second conductive layer 50 (conductive metal sheet or the second dielectric substrate), prepreg and it is equipped with the switching tube
The dielectric substrate 10 of chip 20 and diode chip for backlight unit 30 stacks gradually pressing, makes the filling of prepreg gummosis and overlay switch
Tube chip 20 and diode chip for backlight unit 30.
The through-hole 42 for penetrating the insulating layer 40 and the second conductive layer 50 is opened up, and fills conductive material in the through-hole 42
Matter makes second conductive layer 50 be electrically connected with first conductive layer 12 by the conductive materials in the through-hole 42, with
And switch tube chip 20 is connected with 30 circuit of diode chip for backlight unit.
Specifically, it is made of laser technology on the second conductive layer 50 and insulating layer 40 and reaches switching tube chip 20 and two
The polarity pin of pole pipe chip 30, and the through-hole 42 of the first conductive layer 12 is reached, conductive materials are filled in the through-hole 42
Through-hole 42 is set to metallize.Second conductive layer 50 needs to make circuit pattern before or after lamination, switchs tube chip 20 and two poles
The polarity pin of 30 upper surface of tube chip forms circuit connection by the through-hole 42 of metallization with corresponding circuit pattern.
In more specific embodiment, further include in the step s 120：Leading-out terminal 60 is also set up, the leading-out terminal 60 is made
One end connect with 12 holding electrical of the first conductive layer, the protruding step of the other end.In other embodiments, may be used
When patterned second conductive layer 50 is arranged, leading-out terminal is set, one end and described second of the leading-out terminal 60 will be made
50 holding electrical of conductive layer connects, and the other end is protruding.Leading-out terminal includes control terminal 62 and power terminal 61, the control
Terminal 62 and power terminal 61 processed are located at power module opposite sides.Low voltage control end is reduced far from high-voltage power end
High-pressure side improves the reliability of control terminal to the electrical Interference of low-pressure end.
Further, the method further includes the steps that heating, so that the prepreg solidification is realized insulation by heating.
Further, the method further includes that setting is led with the lower surface of the dielectric substrate and/or described second
The step of radiator of the upper surface of electric layer.
As it can be seen that above-mentioned production method is that encapsulation is not necessarily to open plastic sealed mould making power module, production cost is saved；
Chip realizes electrical connection by the through-hole 42 of metallization, reduces the volume of module, is conducive to module miniaturization.
More specifically, the manufacturing method of power module is：It will switch tube chip 20 and diode chip for backlight unit 30, control terminal 62
And power terminal 61 is welded on 10 patterned first conductive layer 12 of dielectric substrate, by the prepreg of respective thickness
(insulating layer) the 40, second conductive layer 50 is laminated with the dielectric substrate 10 for posting chip, makes the gummosis of prepreg 40
It fills and covers chip, wherein prepreg 40 is insulation, and its coefficient of thermal expansion needs to thermally expand with power device as possible and is
Number matching.It is graphical to the second conductive layer 50 of module after lamination first, then through-hole 42 is made using laser technology and is metallized,
It is electrically connected so that chip polarity pin is formed with corresponding leading-out terminal 60.Ensuring to combine between plated-through hole 42 and chip
The settings more as much as possible of reliability premise lower through-hole 42, to ensure the conveyance capacity of circuit and to improve chip top heat radiation energy
Power.Module (dielectric substrate 10) lower surface is radiated by radiator 70, and module (the second conductive layer 50) upper surface is coated
Thermal plastic insulation is after 80s to connect heat dissipation with another radiator 70, realizes two-side radiation with this, improves heat-sinking capability.Two heat dissipations
Device 70 is not necessarily required to be arranged simultaneously, disclosure satisfy that radiating condition, also can be only independent by the radiator of lower surface 70
Constitute single side heat dissipation.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (12)
1. a kind of power module, which is characterized in that including：
Dielectric substrate, upper surface have patterned first conductive layer；
At least one switch tube chip and at least one diode chip for backlight unit, the switch tube chip and diode chip for backlight unit are attached at institute
On the upper surface for stating dielectric substrate, is formed and be electrically connected with first conductive layer；
Insulating layer is covered on the dielectric substrate, the switch tube chip and diode chip for backlight unit are coated in, it is described
Insulating layer offers the through-hole through its upper and lower surface, and conductive materials are filled in the through-hole；
Patterned second conductive layer, is set on the insulating layer, second conductive layer by the conductive materials with
First conductive layer is conductively connected, and is connected the switch tube chip and diode chip for backlight unit circuit by the conductive materials
It connects.
2. power module as described in claim 1, which is characterized in that the insulating layer is prepreg.
3. power module as described in claim 1, which is characterized in that further include leading-out terminal, one end of the leading-out terminal
It is connect with first conductive layer or the second conductive layer holding electrical, and the conductive materials in the through-hole is coordinated electrically to connect
It is connected in the switch tube chip and the corresponding polarity pin of diode chip for backlight unit, the other end of the leading-out terminal is protruding.
4. power module as claimed in claim 3, which is characterized in that the leading-out terminal includes control terminal and power end
Son, first conductive layer include the first circuit pattern and second circuit pattern positioned at power module opposite sides；
It is described switch tube chip and diode chip for backlight unit polarity pin respectively by the conductive materials in the corresponding through-hole with
And second conductive layer is each electrically coupled to first circuit pattern and second circuit pattern, the control terminal and work(
Rate terminal is connected with first circuit pattern with second circuit pattern holding electrical respectively.
5. power module as claimed in claim 4, which is characterized in that first circuit pattern includes emitter pad sum aggregate
Electrode pad, the power terminal include the emitter power terminal sum aggregate welded respectively with emitter pad sum aggregate electrode pad
Electrode power terminal.
6. power module as described in claim 1, which is characterized in that further include radiator, the radiator setting is described absolutely
The lower surface of edge medium substrate and/or the upper surface of second conductive layer.
7. power module as claimed in claim 6, which is characterized in that the radiator is radiating fin or flat-plate heat pipe.
8. a kind of manufacturing method of power module, which is characterized in that include the following steps：
A upper surface, which is arranged, has the dielectric substrate of the first conductive layer；
At least one switch tube chip and at least one diode chip for backlight unit are set on first conductive layer, led with described first
Electric layer forms electrical connection；
An insulating layer is set on the first dielectric substrate, the switch tube chip and diode chip for backlight unit are coated on
It is interior；
Second conductive layer is set on the insulating layer, opens up the through-hole for penetrating the insulating layer and the second conductive layer, and in institute
It states and fills conductive materials in through-hole, second conductive layer is made to pass through the conductive materials in the through-hole and first conductive layer
Electrical connection, and switch tube chip is connected with diode chip for backlight unit circuit.
9. the manufacturing method of power module as claimed in claim 6, which is characterized in that by least one switch tube chip and
When at least one diode chip for backlight unit is set on first conductive layer, leading-out terminal is also set up, one end of the leading-out terminal is made
It is connect with the first conductive layer holding electrical, the other end is protruding；Or
When second conductive layer is set, leading-out terminal is set, one end of the leading-out terminal is made to fix electricity with second conductive layer
Gas connects, and the other end is protruding.
10. the manufacturing method of half-bridge power module as claimed in claim 7, which is characterized in that the leading-out terminal includes control
Terminal and power terminal processed, the control terminal and power terminal are located at the power module opposite sides.
11. the manufacturing method of power module as claimed in claim 6, which is characterized in that the method further includes the step of heating
Suddenly；Wherein, the insulating layer is prepreg, so that the prepreg solidification is realized insulation by heating.
12. the manufacturing method of power module as claimed in claim 6, which is characterized in that further include that setting is situated between with the insulation
The radiator of the lower surface of matter substrate and/or the upper surface of second conductive layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710063330.9A CN108346645A (en) | 2017-01-24 | 2017-01-24 | A kind of power module and its manufacturing method |
| PCT/CN2018/073368 WO2018137560A1 (en) | 2017-01-24 | 2018-01-19 | Power module and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710063330.9A CN108346645A (en) | 2017-01-24 | 2017-01-24 | A kind of power module and its manufacturing method |
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| CN108346645A true CN108346645A (en) | 2018-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710063330.9A Pending CN108346645A (en) | 2017-01-24 | 2017-01-24 | A kind of power module and its manufacturing method |
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| Country | Link |
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| CN (1) | CN108346645A (en) |
| WO (1) | WO2018137560A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782498A (en) * | 2021-07-27 | 2021-12-10 | 华为数字能源技术有限公司 | Power module and power device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110120354B (en) * | 2019-05-06 | 2024-05-28 | 珠海零边界集成电路有限公司 | Intelligent power module packaging method and intelligent power module |
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| CN113782498B (en) * | 2021-07-27 | 2024-05-17 | 华为数字能源技术有限公司 | Power module and power device |
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| Publication number | Publication date |
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| WO2018137560A1 (en) | 2018-08-02 |
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