CN108336192B - Preparation method of light-emitting diode epitaxial wafer - Google Patents
Preparation method of light-emitting diode epitaxial wafer Download PDFInfo
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- CN108336192B CN108336192B CN201711479739.5A CN201711479739A CN108336192B CN 108336192 B CN108336192 B CN 108336192B CN 201711479739 A CN201711479739 A CN 201711479739A CN 108336192 B CN108336192 B CN 108336192B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 85
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 80
- 230000010287 polarization Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 43
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 29
- 230000000903 blocking effect Effects 0.000 claims description 13
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000005428 wave function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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Abstract
The invention discloses a preparation method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The method comprises the following steps: providing a substrate; growing an atomic polarization adjustment layer on a substrate, the atomic polarization adjustment layer being a compound formed of a metal element and a nitrogen element, the metal element including at least one of aluminum and gallium, a surface of the atomic polarization adjustment layer opposite to a surface provided on the substrate being a nitrogen-polarity surface; and a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electronic barrier layer and a P-type gallium nitride layer are sequentially grown on the atomic polarization adjusting layer. According to the invention, the stress generated by lattice mismatch between the substrate and the gallium nitride is released through the atomic polarization adjusting layer, and dislocation and defect generated by lattice mismatch between the substrate and the gallium nitride are inhibited from extending to the multiple quantum well layer, so that the growth quality of the multiple quantum well layer is improved, the polarization effect is avoided, and the light emitting efficiency of the light emitting diode is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a light-emitting diode epitaxial wafer.
Background
A Light Emitting Diode (LED) is a semiconductor Light Emitting device manufactured by using the PN junction electroluminescence principle of a semiconductor. The epitaxial wafer is a primary finished product in the preparation process of the light-emitting diode.
The existing epitaxial wafer comprises a sapphire substrate, and a buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electronic barrier layer and a P-type gallium nitride layer which are sequentially stacked on the sapphire substrate. The multiple quantum well layer comprises a plurality of quantum wells and a plurality of quantum barriers, the quantum wells and the quantum barriers are alternately stacked, the quantum wells are indium gallium nitride layers, and the quantum barriers are gallium nitride layers. When current is injected, electrons provided by the N-type gallium nitride layer and holes provided by the P-type gallium nitride layer are injected into the multi-quantum well layer to perform composite light emission.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
the buffer layer is an aluminum nitride layer or a gallium nitride layer, and because the appearance of a metal polar surface (an aluminum polar surface or a gallium polar surface) is smoother than that of a non-metal polar surface (a nitrogen polar surface) and the stability is better, the surface of the buffer layer provided with the undoped gallium nitride layer is usually a metal polar surface, so that stress and defects generated by lattice mismatch between the substrate and the gallium nitride can easily extend to the multiple quantum well layer, the growth quality of the multiple quantum well layer is poor, a polarization effect is generated, the overlapping of electron wave functions of the multiple quantum well layer is weakened, the recombination efficiency of electrons and holes is influenced, and the light emitting efficiency of the light emitting diode is reduced.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present invention provide a method for manufacturing an epitaxial wafer of a light emitting diode. The technical scheme is as follows:
the embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which comprises the following steps:
providing a substrate;
growing an atomic polarization adjustment layer on the substrate, the atomic polarization adjustment layer being a compound formed of a metal element and a nitrogen element, the metal element including at least one of aluminum and gallium, a surface of the atomic polarization adjustment layer opposite to a surface provided on the substrate being a nitrogen-polarity surface;
and growing a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electronic barrier layer and a P-type gallium nitride layer on the atomic polarization adjusting layer in sequence.
Optionally, when the metal element includes only aluminum, the growing an atomic polarization adjustment layer on the substrate includes:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing the atomic polarization adjusting layer by adopting ammonia gas and trimethylaluminum.
Optionally, when the metal element includes only gallium, the growing an atomic polarization adjustment layer on the substrate includes:
treating the surface of the substrate by adopting ammonia gas;
the growth temperature is controlled to be 900-1200 ℃, the V/III ratio is controlled to be 40-200, and the atomic polarization adjusting layer is grown by adopting ammonia gas and trimethyl gallium.
Optionally, when the metal element includes aluminum and gallium, growing an atomic polarization adjustment layer on the substrate includes:
treating the surface of the substrate by adopting ammonia gas;
the growth temperature is controlled to be 400-900 ℃, the V/III ratio is controlled to be 40-200, and the atomic polarization adjusting layer is grown by adopting ammonia gas, trimethylaluminum and trimethylgallium.
Optionally, the atomic polarization adjustment layer has a thickness of 20nm to 200 nm.
Optionally, the thickness of the gallium nitride buffer layer is 50nm to 100 nm.
Optionally, the growth pressure of the atomic polarization adjustment layer is 100torr to 400 torr.
Optionally, the providing a substrate comprises:
and forming an aluminum nitride film on the sapphire substrate by adopting a physical vapor deposition technology.
Optionally, the electron blocking layer is a P-type doped aluminum gallium nitride layer, and the surface of the electron blocking layer on which the P-type gallium nitride layer grows is a nitrogen polar surface.
Optionally, the sequentially growing a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer, and a P-type gallium nitride layer on the atomic polarization adjustment layer includes:
after the multiple quantum well layer grows, treating the surface of the multiple quantum well layer by ammonia gas;
controlling the growth temperature to be 400-1200 ℃, controlling the V/III ratio to be 40-1200, and growing the electron barrier layer by adopting ammonia gas, trimethylaluminum and trimethylgallium.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
the method comprises the steps of growing an atomic polarization adjusting layer on a substrate, wherein the atomic polarization adjusting layer is a compound formed by a metal element and a nitrogen element, the surface opposite to the surface arranged on the substrate is a nitrogen polarity surface, and then growing a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electron barrier layer and a P-type gallium nitride layer on the atomic polarization adjusting layer in sequence, so that the gallium nitride buffer layer and the like grow on the nitrogen polarity surface of the atomic polarization adjusting layer. Because the shape of the nitrogen polar surface is more uneven than that of the metal polar surface, the gallium nitride buffer layer and the like grow on the nitrogen polar surface of the atomic polarization adjusting layer, the stress generated by lattice mismatch between the substrate and the gallium nitride can be effectively released, dislocation and defect generated by lattice mismatch between the substrate and the gallium nitride are inhibited from extending to the multiple quantum well layer, the growth quality of the multiple quantum well layer is improved, the polarization effect is avoided, the electronic wave function overlapping of the multiple quantum well layer is enhanced, the recombination efficiency of electrons and holes is improved, and the light emitting efficiency of the light emitting diode is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Example one
The embodiment of the invention provides a preparation method of a light emitting diode epitaxial wafer, fig. 1 is a flow chart of the preparation method provided by the embodiment of the invention, and referring to fig. 1, the preparation method comprises the following steps:
step 101: a substrate is provided.
Optionally, this step 101 may include:
an aluminum nitride film is formed on a sapphire substrate by using a Physical Vapor Deposition (PVD).
An aluminum nitride film is formed on a sapphire substrate in advance by utilizing a PVD (physical vapor deposition) technology, and a subsequent atomic polarization adjusting layer grows on the aluminum nitride film, so that the growth of the atomic polarization adjusting layer is facilitated, and the growth quality of an epitaxial wafer is improved.
Step 102: an atomic polarization adjusting layer is grown on the substrate.
In the present embodiment, the atomic polarization adjustment layer is a compound formed of a metal element including at least one of aluminum and gallium and a nitrogen element, and a surface of the atomic polarization adjustment layer opposite to a surface provided on the substrate is a nitrogen polarity surface, that is, a surface of the atomic polarization adjustment layer provided with the gallium nitride buffer layer is a nitrogen polarity surface.
In a first implementation manner of the present embodiment, when the metal element includes only aluminum, the step 102 may include:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing the atomic polarization adjusting layer by adopting ammonia gas and trimethylaluminum.
In a second implementation manner of the present embodiment, when the metal element includes only gallium, the step 102 may include:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing the atomic polarization adjusting layer by adopting ammonia gas and trimethyl gallium.
In a third implementation manner of the present embodiment, when the metal element includes aluminum and gallium, the step 102 may include:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing the atomic polarization adjusting layer by adopting ammonia gas, trimethylaluminum and trimethylgallium.
The surface of the atomic polarization adjustment layer opposite to the surface provided on the substrate is a nitrogen-polarity surface by controlling the growth temperature and the v/iii ratio. Wherein the v/iii ratio is a molar ratio of a group v element and a group iii element in the atomic polarization adjustment layer, specifically, a molar ratio of a gas (i.e., ammonia gas) supplying the group v element in the atomic polarization adjustment layer and a gas (at least one of trimethyl gallium and trimethyl aluminum) supplying the group iii element in the atomic polarization adjustment layer.
Alternatively, the atomic polarization adjustment layer may have a thickness of 20nm to 200 nm.
By controlling the thickness of the atomic polarization adjusting layer, the phenomenon that the atomic polarization adjusting layer cannot play a role due to too small thickness is avoided on one hand, and the phenomenon that the epitaxial wafer is warped and materials are wasted due to too large thickness of the atomic polarization adjusting layer is avoided on the other hand.
Specifically, the growth pressure of the atomic polarization adjustment layer may be 100Torr to 300 Torr.
Step 103: and a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electronic barrier layer and a P-type gallium nitride layer are sequentially grown on the atomic polarization adjusting layer.
Specifically, the thickness of the gallium nitride buffer layer may be 50nm to 100 nm.
The thickness of the gallium nitride buffer layer is controlled to be matched with the atomic polarization adjusting layer, so that a flat surface is provided for the growth of the undoped gallium nitride layer and the like.
Specifically, the multiple quantum well layer may include a plurality of quantum wells and a plurality of quantum barriers, the plurality of quantum wells and the plurality of quantum barriers are alternately stacked, the quantum wells may be indium gallium nitride layers, and the quantum barriers may be gallium nitride layers or aluminum gallium nitride layers; the electron blocking layer may be a P-type doped AlGaN layer, such as AlyGa1-yN，0.1＜y＜0.5。
Alternatively, the surface of the electron blocking layer growth P-type gallium nitride layer can be a nitrogen polar surface.
The surface of the electron blocking layer arranged on the P-type gallium nitride layer is arranged on the nitrogen polar surface, and the nitrogen polar surface is more uneven than the metal polar surface in appearance, so that the electron blocking layer is contacted with the P-type gallium nitride layer more tightly, the ohmic contact resistance is low, the short channel effect is weak, the injection of holes is facilitated, the recombination efficiency of the holes and electrons is increased, and the luminous efficiency of the light-emitting diode is improved.
Specifically, the step 103 may include:
after the multiple quantum well layer grows, treating the surface of the multiple quantum well layer by ammonia gas;
controlling the growth temperature to be 400-1200 ℃, controlling the V/III ratio to be 40-1200, and growing the electron barrier layer by adopting ammonia gas, trimethylaluminum and trimethylgallium.
Specifically, the growth pressure of the electron blocking layer may be 200torr to 500 torr.
More specifically, the thickness of the undoped gallium nitride layer may be 1 μm to 5 μm. The thickness of the N-type gallium nitride layer may be 1 μm to 5 μm, and the doping concentration of the N-type dopant may be 1018cm-3～1019cm-3. The thickness of the quantum well can be 2.5 nm-3.5 nm, and the thickness of the quantum barrier can be 9 nm-20 nm; the number of quantum barriers is the same as the number of quantum wells, and the number of quantum wells may be 5 to 15. The electron blocking layer may have a thickness of 50nm to 150 nm. The thickness of the P-type gallium nitride layer can be 100 nm-200 nm.
Furthermore, the growth temperature of the GaN buffer layer can be 400-600 ℃, and the growth pressure can be 400-600 torr. The growth temperature of the undoped gallium nitride layer can be 1000-1100 ℃, and the growth pressure can be 100-500 torr. The growth temperature of the N-type gallium nitride layer can be 1000-1200 ℃, and the growth pressure can be 100-500 torr. The growth temperature of the quantum well can be 720-829 ℃, and the growth pressure can be 100-500 torr; the growth temperature of the quantum barrier can be 850-959 deg.C, and the growth pressure can be 100-500 torr. The growth temperature of the P-type gallium nitride layer can be 750-1080 ℃, and the growth pressure can be 200-500 torr.
According to the embodiment of the invention, the atomic polarization adjusting layer is grown on the substrate, the atomic polarization adjusting layer is a compound formed by metal elements and nitrogen elements, the surface opposite to the surface arranged on the substrate is a nitrogen polarity surface, and then the gallium nitride buffer layer, the undoped gallium nitride layer, the N-type gallium nitride layer, the multi-quantum well layer, the electron barrier layer and the P-type gallium nitride layer are sequentially grown on the atomic polarization adjusting layer, so that the gallium nitride buffer layer and the like are grown on the nitrogen polarity surface of the atomic polarization adjusting layer. Because the shape of the nitrogen polar surface is more uneven than that of the metal polar surface, the gallium nitride buffer layer and the like grow on the nitrogen polar surface of the atomic polarization adjusting layer, the stress generated by lattice mismatch between the substrate and the gallium nitride can be effectively released, dislocation and defect generated by lattice mismatch between the substrate and the gallium nitride are inhibited from extending to the multiple quantum well layer, the growth quality of the multiple quantum well layer is improved, the polarization effect is avoided, the electronic wave function overlapping of the multiple quantum well layer is enhanced, the recombination efficiency of electrons and holes is improved, and the light emitting efficiency of the light emitting diode is improved.
Example two
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is a specific implementation of the preparation method provided by the embodiment. Specifically, the preparation method comprises the following steps:
step 200: and treating the surface of the substrate by adopting ammonia gas.
Step 201: controlling the temperature at 1200 ℃, the pressure at 200Torr and the V/III ratio at 1200, and growing an atomic polarization adjusting layer with the thickness of 100nm by adopting ammonia gas and trimethylaluminum.
Step 202: the temperature was controlled at 500 ℃ and the pressure at 500Torr, and a 100nm thick gallium nitride buffer layer was grown on the atomic polarization adjusting layer.
Step 203: an undoped gallium nitride layer with a thickness of 1 μm was grown on the gallium nitride buffer layer while controlling the temperature at 1050 ℃ and the pressure at 300 Torr.
Step 204: controlling the temperature at 1100 deg.C and the pressure at 300Torr, and growing on the undoped gallium nitride layer with the thickness of 3 μm and the doping concentration of 5 x 1018cm-3The N-type gallium nitride layer of (1).
Step 205: and controlling the pressure to be 300Torr, and growing a multi-quantum well layer on the N-type gallium nitride layer.
In the present embodiment, the multiple quantum well layer includes 10 quantum wells and 10 quantum barriers, and the 10 quantum wells and the 10 quantum barriers are alternately stacked; the quantum well is an indium gallium nitride layer, the thickness of the quantum well is 3nm, and the growth temperature is 775 ℃; the quantum barrier layer is a gallium nitride layer, the thickness is 15nm, and the growth temperature is 905 ℃.
Step 206: controlling the temperature to be 965 ℃ and the pressure to be 350Torr, and growing a P-type aluminum gallium nitride layer with the thickness of 100nm on the multi-quantum well layer to form the electron barrier layer.
Step 207: and controlling the temperature to be 915 ℃ and the pressure to be 350Torr, and growing a P-type gallium nitride layer with the thickness of 150nm on the electron blocking layer.
Step 208: the temperature was controlled at 950 ℃ and the pressure was 200Torr, and the growth of a P-type contact layer with a thickness of 150nm was continued.
Step 209: the temperature was controlled at 750 ℃ for 7.5 minutes, and annealing was performed in a nitrogen atmosphere.
The experiment shows that the temperature is 60 milliamperes/300 mil2And the voltage is reduced by 0.02V-0.05V, and the energy efficiency is improved by 0.5-1%.
EXAMPLE III
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is another specific implementation of the preparation method provided by the first embodiment. The fabrication method provided in this example is substantially the same as the fabrication method provided in the second example, except that in this example, the growth temperature of the atomic polarization adjustment layer is 1100 ℃, and the v/iii ratio is 400.
Experiments show that compared with the embodiment, the beneficial effect is improved by about 5%.
Example four
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is another specific implementation of the preparation method provided by the first embodiment. The manufacturing method provided in this example is substantially the same as the manufacturing method provided in the second example, except that in this example, the growth temperature of the atomic polarization adjustment layer is 1100 ℃, and the v/iii ratio is 100.
Experiments show that compared with the two phases of the embodiment, the beneficial effects are basically consistent.
EXAMPLE five
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is another specific implementation of the preparation method provided by the first embodiment. The manufacturing method provided in this example is substantially the same as the manufacturing method provided in the second example, except that in this example, the growth temperature of the atomic polarization adjustment layer is 1000 ℃, and the v/iii ratio is 100.
Experiments show that compared with the two phases of the embodiment, the beneficial effects are basically consistent.
EXAMPLE six
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is another specific implementation of the preparation method provided by the first embodiment. The manufacturing method provided in this example is substantially the same as the manufacturing method provided in the second example, except that in this example, the growth temperature of the atomic polarization adjustment layer is 900 ℃, and the v/iii ratio is 200.
Experiments show that compared with the embodiment, the beneficial effects are slightly improved.
EXAMPLE seven
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is another specific implementation of the preparation method provided by the first embodiment. The preparation method provided in this example is substantially the same as that provided in the second example, except that in this example, the growth temperature of the atomic polarization adjustment layer is 500 ℃, the v/iii ratio is 400, and ammonia gas and trimethyl gallium are used for formation.
Experiments show that compared with the two phases of the embodiment, the beneficial effects are basically consistent.
Example eight
The embodiment of the invention provides a preparation method of a light-emitting diode epitaxial wafer, which is another specific implementation of the preparation method provided by the first embodiment. The preparation method provided in this example is substantially the same as that provided in the second example, except that in this example, the growth temperature of the atomic polarization adjustment layer is 500 ℃, the v/iii ratio is 40, and ammonia gas and trimethyl gallium are used for formation.
Experiments show that compared with the two phases of the embodiment, the beneficial effects are basically consistent.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (7)
1. A preparation method of a light emitting diode epitaxial wafer is characterized by comprising the following steps:
providing a substrate;
growing an atomic polarization adjustment layer on the substrate, the atomic polarization adjustment layer being a compound formed of a metal element and a nitrogen element, the metal element including at least one of aluminum and gallium, a surface of the atomic polarization adjustment layer opposite to a surface provided on the substrate being a nitrogen-polarity surface;
growing a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electronic barrier layer and a P-type gallium nitride layer on the atomic polarization adjusting layer in sequence;
when the metal element includes only aluminum, growing an atomic polarization adjustment layer on the substrate includes:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing an atomic polarization adjusting layer by adopting ammonia gas and trimethylaluminum;
when the metal element includes only gallium, growing an atomic polarization adjustment layer on the substrate includes:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing an atomic polarization adjusting layer by adopting ammonia gas and trimethyl gallium;
when the metal element includes aluminum and gallium, growing an atomic polarization adjustment layer on the substrate includes:
treating the surface of the substrate by adopting ammonia gas;
controlling the growth temperature to be 900-1200 ℃, controlling the V/III ratio to be 40-200, and growing the atomic polarization adjusting layer by adopting ammonia gas, trimethylaluminum and trimethylgallium.
2. The production method according to claim 1, wherein the atomic polarization adjustment layer has a thickness of 20nm to 200 nm.
3. The method according to claim 1 or 2, wherein the thickness of the gallium nitride buffer layer is 50nm to 100 nm.
4. The method according to claim 1 or 2, wherein the growth pressure of the atomic polarization adjustment layer is 100to 300 torr.
5. The method of claim 1 or 2, wherein the providing a substrate comprises:
and forming an aluminum nitride film on the sapphire substrate by adopting a physical vapor deposition technology.
6. The preparation method according to claim 1 or 2, wherein the electron blocking layer is a P-type doped aluminum gallium nitride layer, and the surface of the electron blocking layer on which the P-type gallium nitride layer grows is a nitrogen polar surface.
7. The method according to claim 1 or 2, wherein the sequentially growing a gallium nitride buffer layer, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer, and a P-type gallium nitride layer on the atomic polarization adjustment layer comprises:
after the multiple quantum well layer grows, treating the surface of the multiple quantum well layer by ammonia gas;
controlling the growth temperature to be 400-1200 ℃, controlling the V/III ratio to be 40-1200, and growing the electron barrier layer by adopting ammonia gas, trimethylaluminum and trimethylgallium.
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| CN103811603A (en) * | 2012-11-14 | 2014-05-21 | 三星电子株式会社 | A semiconductor light emitting device and a method of manufacturing the same |
| CN104835893A (en) * | 2015-05-29 | 2015-08-12 | 东南大学 | Nitrogen polar surface LED based on metal nitride semiconductor and preparation method |
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| CN101778967A (en) * | 2007-08-09 | 2010-07-14 | 昭和电工株式会社 | Group iii nitride semiconductor epitaxial substrate |
| CN103811603A (en) * | 2012-11-14 | 2014-05-21 | 三星电子株式会社 | A semiconductor light emitting device and a method of manufacturing the same |
| CN104835893A (en) * | 2015-05-29 | 2015-08-12 | 东南大学 | Nitrogen polar surface LED based on metal nitride semiconductor and preparation method |
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