CN108321205B - Based on gold-nano cuprous oxide wire reticular structure phasmon FET and preparation method - Google Patents
Based on gold-nano cuprous oxide wire reticular structure phasmon FET and preparation method Download PDFInfo
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- CN108321205B CN108321205B CN201810059011.5A CN201810059011A CN108321205B CN 108321205 B CN108321205 B CN 108321205B CN 201810059011 A CN201810059011 A CN 201810059011A CN 108321205 B CN108321205 B CN 108321205B
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- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229940112669 cuprous oxide Drugs 0.000 title claims abstract description 37
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000002353 field-effect transistor method Methods 0.000 title abstract description 4
- 239000000243 solution Substances 0.000 claims abstract description 91
- 239000002114 nanocomposite Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- SJUCACGNNJFHLB-UHFFFAOYSA-N O=C1N[ClH](=O)NC2=C1NC(=O)N2 Chemical compound O=C1N[ClH](=O)NC2=C1NC(=O)N2 SJUCACGNNJFHLB-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000003756 stirring Methods 0.000 claims abstract description 29
- 239000012153 distilled water Substances 0.000 claims abstract description 26
- 239000002070 nanowire Substances 0.000 claims abstract description 25
- 239000011259 mixed solution Substances 0.000 claims abstract description 19
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 239000004094 surface-active agent Substances 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 4
- 241000218202 Coptis Species 0.000 claims abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 60
- 239000010931 gold Substances 0.000 claims description 32
- 235000019441 ethanol Nutrition 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 20
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 14
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 14
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 229960005070 ascorbic acid Drugs 0.000 claims description 9
- 235000010323 ascorbic acid Nutrition 0.000 claims description 9
- 239000011668 ascorbic acid Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 229910002708 Au–Cu Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
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- 238000002604 ultrasonography Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 20
- 229910052737 gold Inorganic materials 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 230000005669 field effect Effects 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 10
- 239000002086 nanomaterial Substances 0.000 description 9
- 235000011121 sodium hydroxide Nutrition 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 150000003233 pyrroles Chemical class 0.000 description 5
- UMRSVAKGZBVPKD-UHFFFAOYSA-N acetic acid;copper Chemical compound [Cu].CC(O)=O UMRSVAKGZBVPKD-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 4
- RFUHYBGHIJSEHB-VGOFMYFVSA-N chembl1241127 Chemical compound C1=C(O)C(/C=N/O)=CC=C1C1=CC(O)=CC(O)=C1 RFUHYBGHIJSEHB-VGOFMYFVSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000008236 heating water Substances 0.000 description 4
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- 239000007791 liquid phase Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910018292 Cu2In Inorganic materials 0.000 description 3
- 206010027476 Metastases Diseases 0.000 description 3
- 240000007817 Olea europaea Species 0.000 description 3
- 240000007594 Oryza sativa Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 230000009401 metastasis Effects 0.000 description 3
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- PQLVXDKIJBQVDF-UHFFFAOYSA-N acetic acid;hydrate Chemical compound O.CC(O)=O PQLVXDKIJBQVDF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229940126678 chinese medicines Drugs 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
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- -1 gold ion Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/02—Oxides; Hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
- C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer
Abstract
The present invention, which provides, is based on gold-nano cuprous oxide wire reticular structure phasmon FET and preparation method.The following steps are included: production nano cuprous oxide wire；Surfactant and weak reductant are dissolved into distilled water, heated, and keep constant temperature, then nano cuprous oxide wire is poured into solution, stirs, obtains mixed solution；Adjust tetra chlorauric acid solution pH value arrive alkalescent, by tetra chlorauric acid solution be slowly added in mixed solution, formation Au-Cu2O nano composite structure；By Au-Cu2O nano composite structure is dissolved in water and the small solvent mixed liquor of surface tension, obtains Au-Cu2O nano composite structure solution；By Au-Cu2O nano composite structure solution is uniformly taped against on FET substrate, forms nano wire reticular structure, low temperature naturally dry；Low temperature thermal annealing, it is ensured that the gold thread Ohmic contact on nano composite structure and substrate is produced with Au-Cu2The FET of O nano wire reticular structure.Production method of the present invention have it is simple, quickly, it is low in cost the features such as, sensitiveer than traditional FET, investigative range is also wider.
Description
Technical field
The invention belongs to Nanosemiconductor Device technical fields, more particularly to one kind to be based on gold-cuprous oxide (Au-
Cu2O) the phasmon FET and preparation method thereof of nano wire reticular structure.
Background technique
Cuprous oxide is typical p-type semiconductor material, and direct band gap width is about 2.17eV, it is seen that the absorption model of light
It encloses relatively extensively, and having good hole mobility at room temperature is about 100cm2/ (V.s), is widely used photocatalysis,
Photovoltaic, the fields such as optical detection.But the light absorption length of cuprous oxide is about 10 μm, is far longer than its minority carrier
Diffusion length, so cuprous oxide is better than planar structure using nanowire structure.
Gold nano grain chemical property is more stable, in visible light region hypersorption, can be formed etc. on surface from swashing under illumination
Member has Surface enhanced Raman scattering, biocompatibility etc..
The light of all wave bands can be absorbed in metal, and semiconductor can only absorb the light that energy is greater than its forbidden bandwidth.Gold-oxygen
Change the performance that cuprous nanostructure is not only provided simultaneously with metal nanoparticle and nanometer semiconductor structure, semiconductor can also be made up
Characteristic in photoelectricity.Metal-semiconductor nanostructure is excited by illumination, metal surface phasmon, generates thermoelectricity
Son.When thermoelectron at metal and interface has sufficiently large energy, metal can be crossed and semiconductor directly contacts shape
At Schottky barrier, reach in the conduction band of semiconductor.This will lead to the photoelectric current enhancing of metal-semiconductor device.Metal-
Direct electric charge transfer between semiconductor improves the energy transfer efficiency from metal to semiconductor.Currently, field effect on the market
Should manage all is traditional technotron and Metal-oxide-semicondutor field-effect tube, but utilizes metal-semiconductor etc.
The field-effect tube device manufactured from excimer thermoelectron transfer has not been reported.
Summary of the invention
It is a kind of based on gold-cuprous oxide (Au-Cu the purpose of the present invention is providing regarding to the issue above2O) nano wire is netted
Phasmon FET of structure and preparation method thereof.Metal-semiconductor nano composite structure field-effect tube is directly electric using thermoelectron
Lotus transfer increases the characteristic of semiconductor light electric current, so that it is sensitiveer than traditional field-effect tube in terms of optical detection, visits
It is also wider to survey range, preparation method is simple, and technological parameter is controllable, and repeatability is high.
The invention mainly includes steps: production nano cuprous oxide wire；Surfactant and weak reductant are dissolved
Into distilled water, it is heated to 85-95 DEG C, and keep constant temperature, then nano cuprous oxide wire is poured into solution, stirs, mixed
Close solution；The pH value of adjusting tetra chlorauric acid solution is molten by the tetra chlorauric acid of 0.25-1ml after solution stirring to be mixed to alkalescent
Liquid is slowly added in mixed solution, forms Au-Cu2O nano composite structure；By the Au-Cu2O nano composite structure be dissolved in water with
In the small solvent mixed liquor of surface tension, Au-Cu is obtained2O nano composite structure solution；Using liquid technology by Au-Cu2O nanometers
Composite construction solution is uniformly taped against on pectination backgate FET substrate, forms nano wire reticular structure, low temperature naturally dry；It is rare
Under gas, low temperature thermal annealing, it is ensured that the gold thread Ohmic contact on nano composite structure and substrate is produced with the Au-
Cu2The pectination backgate FET of O nano wire reticular structure.Production method of the present invention have it is simple, quickly, it is low in cost the features such as, than
Traditional FET is sensitiveer, and investigative range is also wider.
Technical solution of the present invention is specifically: one kind being based on gold-nano cuprous oxide wire reticular structure phasmon FET system
Preparation Method, comprising the following steps:
Production nano cuprous oxide wire: the Salicylaldoxime of 0.15g is completely dissolved in the distilled water of 40ml, then takes 69 μ l
Pyrroles be completely dissolved in the distilled water of 10ml, after then both solution are mixed evenly, pour into 50ml autoclave,
180 DEG C of heating 10h, then cool to room temperature, and clean impurity, take out the nano cuprous oxide wire of yellow green；
Surfactant and weak reductant are added in the distilled water of 10ml, stirs to being completely dissolved, is subsequently heated to
85-95 DEG C, and constant temperature is kept, then nano cuprous oxide wire is poured into solution, and be filled with rare gas, such as argon gas,
It keeps stirring, obtains mixed solution；
The pH value for adjusting tetra chlorauric acid solution arrives alkalescent, and solution to be mixed stirs ten minutes later, by the four of 0.25-1ml
Chlorauric acid solution drop is slowly added in heating water bath and the mixed solution that keeps stirring, after 1-2.5h, take out using liquid phase from
Heart isolation technics separates nano composite structure with reaction solution, obtains pure Au-Cu2O nano composite structure；
By the Au-Cu2O nano composite structure is dissolved in water and the small solvent mixed liquor of surface tension, obtains Au-Cu2O
Nano composite structure solution；
Using liquid technology by Au-Cu2O nano composite structure solution is uniformly taped against pectination back gate field-effect transistor substrate
On, nano wire reticular structure is formed, low temperature naturally dry is repeated several times；Under rare gas, low temperature thermal annealing, it is ensured that nanometer is multiple
The gold thread Ohmic contact on structure and substrate is closed, is produced with the Au-Cu2The pectination backgate of O nano wire reticular structure
FET。
In above scheme, the surfactant is the k value of the polyvinylpyrrolidone PVP, PVP of 0.0106-0.0318g
It is 30000, the weak reductant is the ascorbic acid of 0.033-0.1g.Surfactant holds that nano cuprous oxide wire more
After easily growth gold particle, there is PVP good dissolubility to be not only dissolved in water but also can be dissolved in alcohols, easy to clean, and PVP is dissolved in water
It forms colloid and protects cuprous oxide crystal face.Cuprous oxide can be prevented to be reduced using weak reductant.
In above scheme, the concentration of the tetra chlorauric acid solution is 0.5-1mM, and pH value adjustment is to 7~8, tetra chlorauric acid
In gold ion can be restored by weak reductant.The tetra chlorauric acid solution pH value adjustment to 7~8, receive by one side cuprous oxide
Rice noodles are easy to be dissolved under acidic environment, can exist under alkaline environment without being destroyed structure, ascorbic acid is in alkalinity
It cannot be stabilized under environment, pH value adjustment to 7~8 can make nano cuprous oxide wire and ascorbic acid in tetra chlorauric acid solution
In be stabilized simultaneously.
In above scheme, the pH value usable concentration of the tetra chlorauric acid solution is not less than the sodium hydroxide solution tune of 1mol/L
It saves to 8.The pH value adjustment of solution to 8 be can be prevented from into cuprous oxide by acid dissolution, with the big sodium hydroxide solution tune of concentration
Section can prevent the change of tetra chlorauric acid solution concentration.
In above scheme, tetra chlorauric acid solution is slowly added in mixed solution, after 1~2.5h, forms Au-Cu2O nanometers
Composite construction.Time is longer, and the gold nano grain of growth is more, and size is also bigger.Restore the size of gold particle generated and close
Collection degree is by time effects, and the time is longer, and the gold particle size of generation is bigger, also more intensive.
In above scheme, the small solvent mixed liquor of the surface tension is ethyl alcohol；First by Au-Cu2O nano composite structure is molten
In the small ethyl alcohol of surface tension, under low-power after sonic oscillation 15s, the distilled water with ethyl alcohol volume ratio 1:2~1:3 is then taken
It pours into after wherein stirring and low power ultrasound vibrates 10s, obtain Au-Cu2O nano composite structure solution；By distilled water and solution
Mixing can reduce evaporation rate, reduce uneven caused by reuniting.
In above scheme, liquid technology is to use drop pendant method or natural sedimentation by Au-Cu2O nano composite structure solution
Uniformly it is taped against on field-effect tube substrate.
Further, the drop pendant method is at low temperature, slowly to be dripped micro liquid close to substrate transverse with liquid-transfering gun
Onto substrate, making liquid uniformly by little airflow with super soft air-blowing is in membranaceous distribution, naturally dry.
The natural sedimentation is to place the substrate into nano composite structure ethanol solution, and keep horizontality, In
A period of time is stood under low temperature, until liquid level is lower than upper surface of substrate, then slow smooth vertical takes out substrate.
It is a kind of using described based on the production of gold-nano cuprous oxide wire reticular structure phasmon FET preparation method
Pectination backgate FET, pectination backgate field FET include the Au-Cu2O nano composite structure and substrate；The Au-Cu2O is nano combined
Structure is uniformly taped against the upper of substrate, forms Au-Cu2O nano wire reticular structure.
The substrate includes Au/Ti electrode, the SiO that the pectination being sequentially arranged from top to bottom is intersected2Insulating layer, p-type are heavily doped
Miscellaneous Si layer and back-gate electrode；
The Au-Cu2O nano composite structure is uniformly taped against the upper of substrate, reticulates directly with the Au/Ti electrode on substrate
Contact forms Au-Cu2O nano wire reticular structure；Source electrode and drain electrode and the Au/Ti electrode extended bilateral symmetry and it is in
Pectination is intersected, and the groove formed between the adjacent line of the Au/Ti electrode that pectination is intersected, source electrode and drain electrode is drawn by conductor in parallel respectively
Out, back-gate electrode is drawn also by conducting wire, is then fixed respectively with conductive silver glue, then packaged with insulating materials.
Compared with prior art, the beneficial effects of the present invention are: the present invention is in the solution with organic reducing agent by copper acetate
Reduction generates Cu2O nano wire；With weak reductant in Cu2By chlorauric acid solution in-situ reducing at Au nano particle on O nano wire.It adopts
Nano composite structure is tiled onto pectination back gate field-effect transistor substrate with liquid technology；Using Low Temperature Thermal under inert gas atmosphere
Annealing technology carries out structure optimization；External circuit and encapsulation.Nano composite structure and phasmon thermoelectron provided by the invention turns
The production method of the field-effect tube device of shifter mechanism have it is simple, quickly, it is low in cost the features such as, and the New Type Field produced
Effect tube device is sensitiveer than traditional, and investigative range is also wider.Preparation method of the invention can be simple, quick, stable
Prepare gold-nano cuprous oxide wire structure, the chemicals used is all environmental protection and the drug easily bought, the condition of preparation
Mildly, technological parameter is controllable, and repeatability is high.Field-effect tube device prepared by the present invention is based on metal-semiconductor etc. from sharp
First thermoelectron metastasis, metal-semiconductor nanostructure cause the optical absorption peak of semiconductor left from 480nm red shift to 650nm
The right side, so that detectable range is also more wide.In the prepared field-effect tube device based on the transfer of phasmon thermoelectron of the invention
The phasmon energy transfer thermoelectron of metal shifts so that the signal code of device enhances 10 times or so, and field-effect tube lining
Bottom uses backgate pectinate texture, and source-drain electrode is formed in parallel by many small source electrodes and many small drain electrodes respectively, increases electric current,
Keep device sensitiveer for detection optical signal.
Detailed description of the invention
Fig. 1 is the Au-Cu grown in the embodiment of the present invention three2O nano composite structure scanning electron microscope (SEM) photograph.
Fig. 2 is the pectination back gate field-effect transistor sectional view of the invention based on phasmon thermoelectron metastasis.
Fig. 3 is the top view of the pectination back gate field-effect transistor of the invention based on phasmon thermoelectron metastasis.
In figure, 1, gold-cuprous nano composite construction, 2, Au/Ti electrode, 3, SiO2Insulating layer, 4, p-type heavy doping Si
Layer, 5, back grid, 6, groove, 7, source electrode, 8, drain electrode, 9, copper wire.
Specific embodiment
Invention is further described in detail with reference to the accompanying drawings and detailed description, but protection scope of the present invention
It is not limited to this.
The present invention prepares gold-cuprous oxide Au-Cu2Reagent source used in the method for O nanostructure is as follows: nothing
Water acetic acid copper, pyrroles, tetra chlorauric acid, sodium hydroxide, ascorbic acid, PVP (K=30000) is bought to be tried in Chinese medicines group chemistry
Agent Co., Ltd, distilled water are then purchase Watson distilled water.
Embodiment one:
(1) firstly, the Salicylaldoxime that will weigh 0.15g, is poured into the distilled water of 40ml, magnetic agitation is used
30min makes it completely dissolved.It is injected in the distilled water of 20ml with the pyrroles that liquid-transfering gun takes out 140 microlitres, stirs 20min, make it
It is completely dissolved.Then the chromium solution of 10ml is instilled dropwise in acetic acid copper solution while stirring, then proceedes to stir
40min, until mixed solution color becomes olive green.Finally, the mixed solution by 80% pours into the autoclave of 50ml, roasting
In case at 180 DEG C, 10h is heated, then takes out and is rapidly cooled to room temperature.Liner is opened, black liquor is poured out, is subsequently poured into distillation
Water cleans 5 times, then with washes of absolute alcohol 3 times, the inside black impurity is eliminated, and is subsequently poured into ethyl alcohol for the yellow green on inner wall
Nano wire dissolution, takes out.
(2) ascorbic acid of the PVP of 0.0106g and 0.033g is dissolved in the distilled water of 10ml, stirring keeps it completely molten
Solution, then seals heating water bath to 85 DEG C for the solution, allows the gas in solution to be discharged, then the cuprous oxide of above-mentioned preparation is received
Rice noodles pour into wherein, argon gas are being passed through into solution, and in the state of being stirred continuously for 90 DEG C, stir 10min always.
(3) sodium hydroxide solution of 0.5mol/L and the tetra chlorauric acid solution of 0.5mM are first prepared, a few drop hydroxides are then dripped
Sodium solution is by the pH value adjustment of tetra chlorauric acid solution to 8.Then with liquid-transfering gun take the tetra chlorauric acid solution of 0.25ml slowly by
Drop instills in above-mentioned solution, and solution starts red occur, implies initially forming for gold particle.The growth course of gold particle is all
At 85 DEG C, carried out in the state of keeping stirring.After 1h, solution is taken out.Finally at 3000rmp, skill is centrifugated using liquid phase
Art separates nano composite structure with liquid, is then dissolved in 5ml ethyl alcohol.
(4) it is cleaned by ultrasonic FET substrate with ethyl alcohol and distilled water, with two fine copper wires by the source electrode of FET substrate two sides and leakage
Pole is connected in parallel respectively, is fixed with elargol, then with epoxy resin that electrode package is good.Because ethanol evaporation is fast, Au-
Cu2O nano composite structure is easy to reunite during evaporation due to surface tension, and Au-Cu2O nano composite structure exists
It is easy to reunite in water.The distilled water of 1ml is added to 3mlAu-Cu2In the ethanol solution of O nanostructure, after mixing evenly, obtain
To mixed solution, then take mixed solution when pipette soon encounters substrate with liquid-transfering gun using drop pendant method, it is vertical slow
It slowly drips in the substrate in the heart, making liquid uniformly by little airflow with super soft air-blowing is in membranaceous distribution, Au-Cu2O nanometers multiple
It closes structure to be taped against on packaged FET substrate, forms Au-Cu2O nano wire reticular structure slowly dries at 10 DEG C of vacuum, then
In the environment of argon gas, 200 DEG C of annealing 30min make Au-Cu2Gold thread on O nano composite structure and substrate forms Ohmic contact.
Copper wire is connected with elargol again with the grid of bottom finally, is packaged with epoxy resin.
Embodiment two:
(1) firstly, the Salicylaldoxime that will weigh 0.15g, is poured into the distilled water of 40ml, magnetic agitation is used
30min makes it completely dissolved.It is injected in the distilled water of 20ml with the pyrroles that liquid-transfering gun takes out 140 microlitres, stirs 20min, make it
It is completely dissolved.Then the chromium solution of 10ml is instilled dropwise in acetic acid copper solution while stirring, then proceedes to stir
40min, until mixed solution color becomes olive green.Finally, the mixed solution by 80% pours into the autoclave of 50ml, roasting
In case at 180 DEG C, 10h is heated, then takes out and is rapidly cooled to room temperature.Liner is opened, black liquor is poured out, is subsequently poured into distillation
Water cleans 5 times, then with washes of absolute alcohol 3 times, the inside black impurity is eliminated, and is subsequently poured into ethyl alcohol for the yellow green on inner wall
Nano wire dissolution, takes out.
(2) ascorbic acid of the PVP of 0.0318g and 0.1g to be dissolved in the distilled water of 10ml, stirring makes it completely dissolved,
Then the solution is sealed into heating water bath to 95 DEG C, allows gas discharge in solution, then by the cuprous nano of above-mentioned preparation
Line pours into wherein, argon gas is being passed through into solution, and in the state of being stirred continuously for 95 DEG C, stir 10min always.
(3) sodium hydroxide solution of 1mol/L and the tetra chlorauric acid solution of 1mM are first prepared, it is molten then to drip a few drop sodium hydroxides
Liquid is by the pH value adjustment of tetra chlorauric acid solution to 8.Then the tetra chlorauric acid solution of 1ml is taken slowly to instill dropwise with liquid-transfering gun
It states in solution, solution starts red occur, implies initially forming for gold particle.The growth course of gold particle be all at 90 DEG C,
It is carried out in the state of keeping stirring.After 2.5h, solution is taken out.Finally at 3000rmp, it will be received using liquid phase centrifugal separation technology
Rice composite construction is separated with liquid, is then dissolved in 5ml ethyl alcohol.
(4) it is cleaned by ultrasonic FET substrate with ethyl alcohol and distilled water, with two fine copper wires by the source electrode of FET substrate two sides and leakage
Pole is connected in parallel respectively, is fixed with elargol, then with epoxy resin that electrode package is good.Because ethanol evaporation is fast, Au-
Cu2O nano composite structure is easy to reunite during evaporation, and Au-Cu2O nano composite structure is easy to reunite in water.
The distilled water of 1ml is added to 3mlAu-Cu2In the ethanol solution of O nanostructure, after mixing evenly, then used using drop pendant method
Liquid-transfering gun takes mixed solution when pipette soon encounters substrate, vertically slowly drips in the substrate in the heart, with super
It is in membranaceous distribution that soft air-blowing, which makes liquid uniformly by little airflow, by Au-Cu2O nano composite structure is taped against packaged FET substrate
On, form Au-Cu2O nano wire reticular structure slowly dries at 10 DEG C of vacuum, then in the environment of argon gas, 200 DEG C of annealing
30min makes Au-Cu2Gold thread on O nano composite structure and substrate forms Ohmic contact.Finally again with elargol by copper wire and bottom
The grid in portion connects, and is packaged with epoxy resin.
Embodiment three:
(1) firstly, the Salicylaldoxime that will weigh 0.15g, is poured into the distilled water of 40ml, magnetic agitation is used
30min makes it completely dissolved.It is injected in the distilled water of 20ml with the pyrroles that liquid-transfering gun takes out 140 microlitres, stirs 20min, make it
It is completely dissolved.Then the chromium solution of 10ml is instilled dropwise in acetic acid copper solution while stirring, then proceedes to stir
40min, until mixed solution color becomes olive green.Finally, the mixed solution by 80% pours into the autoclave of 50ml, roasting
In case at 180 DEG C, 10h is heated, then takes out and is rapidly cooled to room temperature.Liner is opened, black liquor is poured out, is subsequently poured into distillation
Water cleans 5 times, then with washes of absolute alcohol 3 times, the inside black impurity is eliminated, and is subsequently poured into ethyl alcohol for the yellow green on inner wall
Nano wire dissolution, takes out.
(2) ascorbic acid of the PVP of 0.0318g and 0.1g to be dissolved in the distilled water of 10ml, stirring makes it completely dissolved,
Then the solution is sealed into heating water bath to 90 DEG C, allows gas discharge in solution, then by the cuprous nano of above-mentioned preparation
Line pours into wherein, argon gas is being passed through into solution, and in the state of being stirred continuously for 90 DEG C, stir 10min always.
(3) sodium hydroxide solution of 1mol/L and the tetra chlorauric acid solution of 1mM are first prepared, it is molten then to drip a few drop sodium hydroxides
Liquid is by the pH value adjustment of tetra chlorauric acid solution to 8.Then the tetra chlorauric acid solution of 0.5ml is taken slowly to instill dropwise with liquid-transfering gun
In above-mentioned solution, solution starts red occur, implies initially forming for gold particle.The growth course of gold particle is all 90
DEG C, it is carried out in the state of keeping stirring.After 1.5h, solution is taken out.Finally at 3000rmp, using liquid phase centrifugal separation technology
Nano composite structure is separated with liquid, is then dissolved in 5ml ethyl alcohol.
(4) it is cleaned by ultrasonic FET substrate with ethyl alcohol and distilled water, with two fine copper wires by the source electrode of FET substrate two sides and leakage
Pole is connected in parallel respectively, is fixed with elargol, then with epoxy resin that electrode package is good.Because ethanol evaporation is fast, Au-
Cu2O nano composite structure is easy to reunite during evaporation, and Au-Cu2O nano composite structure is easy to reunite in water.
The distilled water of 1ml is added to 3mlAu-Cu2In the ethanol solution of O nanostructure, after mixing evenly, then used using drop pendant method
Liquid-transfering gun takes mixed solution when pipette soon encounters substrate, vertically slowly drips in the substrate in the heart, with super
It is in membranaceous distribution that soft air-blowing, which makes liquid uniformly by little airflow, by Au-Cu2O nano composite structure is taped against packaged FET substrate
On, form Au-Cu2O nano wire reticular structure slowly dries at 10 DEG C of vacuum, then in the environment of argon gas, 200 DEG C of annealing
30min makes Au-Cu2Gold thread on O nano composite structure and substrate forms Ohmic contact.Finally again with elargol by copper wire and bottom
The grid in portion connects, and is packaged with epoxy resin.
Fig. 1 is the Au-Cu grown in specific embodiment three2O nano composite structure scanning electron microscope (SEM) photograph.Three specific implementations
In scheme, embodiment three prepares that nano composite structure is more uniform, and concentration is more appropriate.And when tetra chlorauric acid solution adds
The amount entered in growth-promoting media is much longer with the time of heating reaction, and the gold particle concentration grown is also just big, and size is also got over
Greatly.
Fig. 2 is the Au-Cu based on phasmon thermoelectron metastasis2The sectional view of O Nanostructure Network FET.Substrate
It is made of four parts: the Au/Ti electrode 2 that pectination is intersected, the SiO of 300nm or so2Insulating layer 3,4 He of Si layer of p-type heavy doping
Back-gate electrode 5.
Fig. 3 is the Au-Cu based on phasmon thermoelectron metastasis2The top view of O Nanostructure Network FET.It is a kind of
It is described to be based on Au-Cu2The pectination backgate FET of the phasmon FET preparation method production of O nano wire reticular structure, the pectination
Backgate FET includes Au-Cu2O nano composite structure 1 and substrate；The substrate includes Au/Ti electrode 2, the SiO that pectination is intersected2Absolutely
Edge layer 3, p-type heavy doping Si layer 4 and back-gate electrode 5.
The Au-Cu2O nano composite structure 1 is uniformly taped against the upper of substrate, reticulates with the Au/Ti electrode 2 on substrate
Directly contact.1cm2Square p-type heavy doping Si layer 4 be equipped with a layer thickness be 300nmSiO2Insulating layer 3, Au/Ti electricity
Pole 2 is to plate Ti and Au as the source electrode 7 and drain electrode 8, source electrode 7 and 8 bilateral symmetry of drain electrode on substrate and intersect in pectination, pectination
The groove 6 formed between the adjacent line of the Au/Ti electrode 2 of intersection, groove width are 8 μm or so.Source electrode 7 and drain electrode 8 respectively by
Conductor in parallel is drawn, and 4 lower section of Si layer of p-type heavy doping sets back-gate electrode 5, and back-gate electrode 5 is fixed by conductive silver glue, uses conducting wire
It draws, then packaged with insulating materials.
Although not each embodiment only includes one it should be appreciated that this specification describes according to various embodiments
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solutions in the various embodiments may also be suitably combined for bright book, and forming those skilled in the art can be with
The other embodiments of understanding.
The series of detailed descriptions listed above are illustrated only for possible embodiments of the invention,
The protection scope that they are not intended to limit the invention, it is all without departing from equivalent embodiment made by technical spirit of the present invention or change
It should all be included in the protection scope of the present invention.
Claims (10)
1. being based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method, which is characterized in that including following step
It is rapid: production nano cuprous oxide wire；
Surfactant and weak reductant are dissolved into distilled water, are heated to 85-95 DEG C, and keep constant temperature, then will oxidation Asia
Copper nano-wire pours into solution, and stirring obtains mixed solution；The surfactant is polyvinylpyrrolidone PVP, described weak
Reducing agent is ascorbic acid；
The pH value of tetra chlorauric acid solution is adjusted to alkalescent, after solution stirring to be mixed, by the tetra chlorauric acid solution of 0.25-1ml
It is slowly added in mixed solution, forms Au-Cu2O nano composite structure；
By the Au-Cu2O nano composite structure is dissolved in water and the small solvent mixed liquor of surface tension, obtains Au-Cu2O nanometers
Composite construction solution；
Use drop pendant method or natural sedimentation by Au-Cu using liquid technology2O nano composite structure solution is uniformly taped against pectination
On backgate FET substrate, nano wire reticular structure, low temperature naturally dry are formed；Under rare gas, low temperature thermal annealing, it is ensured that nanometer
Gold thread Ohmic contact on composite construction and substrate, is produced with the Au-Cu2The pectination backgate of O nano wire reticular structure
FET。
2. according to claim 1 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, the surfactant is that the k value of the polyvinylpyrrolidone PVP, PVP of 0.0106-0.0318g is 30000, institute
State the ascorbic acid that weak reductant is 0.033-0.1g.
3. according to claim 1 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, the concentration of the tetra chlorauric acid solution is 0.5-1mM, and pH value adjustment is to 7~8.
4. according to claim 1 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, tetra chlorauric acid solution is slowly added in mixed solution, after 1~2.5h, form Au-Cu2O nano composite structure.
5. according to claim 1 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, the small solvent mixed liquor of the surface tension is ethyl alcohol；First by Au-Cu2O nano composite structure is dissolved in surface tension
In small ethyl alcohol, sonic oscillation after a certain period of time, takes and pours into wherein with the distilled water of ethyl alcohol volume ratio 1:2~1:3 under low-power
After stirring and low power ultrasound vibrates certain time, obtains Au-Cu2O nano composite structure solution.
6. according to claim 1 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, the liquid technology is to use drop pendant method or natural sedimentation by Au-Cu2O nano composite structure solution is uniform
It is taped against on pectination backgate FET substrate.
7. according to claim 6 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, the drop pendant method is at low temperature, to take Au-Cu2O nano composite structure solution is slowly dripped to close to substrate transverse
On pectination backgate FET, making liquid uniformly with little airflow is in membranaceous distribution, naturally dry.
8. according to claim 6 be based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method,
It is characterized in that, the natural sedimentation is to place the substrate into nano composite structure ethanol solution, and keep horizontality, In
A period of time is stood under low temperature, until liquid level is lower than pectination backgate FET upper surface, then slow smooth vertical takes substrate
Out.
9. a kind of utilize is based on gold-nano cuprous oxide wire reticular structure phasmon FET described in claim 1-8 any one
The FET of preparation method production, which is characterized in that the FET includes Au-Cu described in claim 12O nano composite structure (1)
And substrate；
The Au-Cu2O nano composite structure (1) is uniformly taped against the upper of pectination backgate FET substrate, forms Au-Cu2O nano wire
Reticular structure.
10. according to claim 9 based on gold-nano cuprous oxide wire reticular structure phasmon FET preparation method production
FET, which is characterized in that the substrate includes Au/Ti electrode (2), the SiO that the pectination that is sequentially arranged from top to bottom is intersected2Absolutely
Edge layer (3), p-type heavy doping Si layer (4) and back-gate electrode (5)；
The Au-Cu2O nano composite structure (1) is uniformly taped against the upper of pectination backgate FET substrate, with the Au/Ti electricity on substrate
Pole (2) reticulates direct contact, forms Au-Cu2O nano wire reticular structure；The Au/Ti electrode that source electrode (7) and drain electrode (8) are stretched out
(2) symmetrically and in pectination intersect, the groove (6) formed between the adjacent line of the Au/Ti electrode (2) that pectination is intersected, source
Pole (7) and drain electrode (8) are drawn by conductor in parallel respectively, and back-gate electrode (5) is drawn by conducting wire, and conductive silver glue is fixed.
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| CN105664966A (en) * | 2015-12-31 | 2016-06-15 | 丽王化工(南通)有限公司 | Preparation method and application of metal/cuprous oxide composite nano material |
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