CN108321115B - Boat supporting structure for growth of wafer epitaxial substrate material - Google Patents
Boat supporting structure for growth of wafer epitaxial substrate material Download PDFInfo
- Publication number
- CN108321115B CN108321115B CN201810063388.8A CN201810063388A CN108321115B CN 108321115 B CN108321115 B CN 108321115B CN 201810063388 A CN201810063388 A CN 201810063388A CN 108321115 B CN108321115 B CN 108321115B
- Authority
- CN
- China
- Prior art keywords
- boat
- supporting
- support
- substrate material
- epitaxial substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The invention discloses a boat supporting structure for growth of a wafer epitaxial substrate material, which comprises a supporting base and a boat supporting body, wherein the boat supporting body is a circular ring-shaped plate with an upper surface and a lower surface, the edge of the boat supporting body is provided with inclined planes respectively connected with the upper surface and the lower surface, the boat supporting body is arranged on the upper surface of the supporting base, the upper surface, the lower surface and the inclined planes are positioned at different heights, the upper surface of the supporting base is provided with a positioning boss, and the upper surface and the lower surface of the boat supporting body are respectively provided with a positioning groove matched with the positioning boss. The invention has two usable surfaces, improves the effective utilization times of the support boat, reduces the cleaning times and improves the growth efficiency.
Description
Technical Field
The invention relates to a support boat for the growth of a wafer epitaxial substrate material.
Background
Currently commercialized group iii-v semiconductor epitaxial techniques mainly include Hydride Vapor Phase Epitaxy (HVPE), Metal Organic Chemical Vapor Deposition (MOCVD), and the like. In the gas reaction chamber, the wafer is arranged in the support boat, the existing support boat is used in a single surface, namely only one surface can be used for placing the wafer, frequent cleaning is needed, the effective utilization times are low, and the growth efficiency is also reduced due to frequent cleaning.
Disclosure of Invention
The invention aims to provide a support boat structure for the growth of a wafer epitaxial substrate material, which improves the effective utilization times of the support boat, reduces the cleaning times and improves the growth efficiency.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a hold in palm boat structure for growth of wafer epitaxial substrate material, includes and supports base and support boat, hold in the palm the ring shape board of boat for having upper surface and lower surface, hold in the palm the edge of boat and be equipped with the inclined plane of being connected with upper surface and lower surface respectively, hold in the palm the boat and establish the upper surface that supports the base, upper surface, lower surface and inclined plane are located different heights.
The upper surface of the supporting base is provided with a positioning boss, and the upper surface and the lower surface of the support boat are respectively provided with a positioning groove matched with the positioning boss.
The positioning boss is conical, cylindrical or polygonal, and the shape of the positioning groove is consistent with that of the positioning boss.
The upper part of the supporting base is provided with a supporting support, the supporting support is provided with a main supporting surface and an inclined supporting surface, the main supporting surface is arranged at the upper end of the inclined supporting surface, the positioning boss is arranged on the main supporting surface, and the support boat is placed on the surface of the main supporting surface.
The angle of an included angle formed between the main supporting surface and the inclined supporting surface is 3-25 degrees.
The inclined angle of the inclined plane is equal to the inclined angle of the inclined supporting surface.
The area of the cross section of the support boat is larger than that of the main supporting surface.
The supporting base and the support boat are both made of silicon carbide, sapphire, graphite or quartz materials.
The invention adopts the boat support with a two-sided structure, can effectively reduce the cleaning times and improve the effective utilization times, thereby improving the growth efficiency.
Drawings
FIG. 1 is an exploded view of the present invention;
FIG. 2 is a schematic cross-sectional view of the boat of the present invention.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
As shown in fig. 1 and 2, the present invention discloses a support boat structure for the growth of a wafer epitaxial substrate material, which comprises a support base 1 and a support boat 2, wherein the support boat 2 is a circular ring-shaped plate having an upper surface 202 and a lower surface 204, the edge of the support boat 2 is provided with an inclined surface 203 respectively connected with the upper surface 202 and the lower surface 204, the support boat 2 is arranged on the upper surface of the support base 1, and the upper surface 202, the lower surface 204 and the inclined surface 203 are located at different heights. The upper surface and the lower surface of the support boat have the same structure, and can be provided with grooves for placing wafer substrates, so that growth is realized on the two surfaces of the support boat.
The upper surface of the supporting base 1 is provided with a positioning boss 6, and the upper surface and the lower surface of the support boat 2 are respectively provided with a positioning groove matched with the positioning boss. Through the matching of the positioning boss and the positioning groove, the boat is stably placed on the upper surface of the supporting base. In this embodiment, set up three location boss, corresponding also sets up three positioning groove, realizes firm assembly.
The positioning boss is conical, cylindrical or polygonal, and the shape of the positioning groove is consistent with that of the positioning boss. Or other shapes, and the above list is not limiting.
The upper part of the supporting base 1 is provided with a supporting bracket which is provided with a main supporting surface 5 and an inclined supporting surface 4, the main supporting surface 5 is arranged at the upper end of the inclined supporting surface 4, a positioning boss 6 is arranged on the main supporting surface 5, and the support boat 2 is placed on the surface of the main supporting surface 5. The angle of the included angle formed between the main supporting surface and the inclined supporting surface is 3-25 degrees, and the stay of byproducts is reduced. The diameter of the main supporting surface is smaller than that of the support boat, so that the epitaxial growth substrate completely covers the main supporting surface.
The inclined angle of the inclined plane is equal to or basically equal to that of the inclined supporting surface, so that better matching is facilitated.
The area of the cross section of the support boat is larger than that of the main supporting surface. The supporting base and the support boat are made of silicon carbide, sapphire, graphite or quartz materials, or other high-temperature-resistant and corrosion-resistant materials.
In the invention, when the support boat is assembled on the supporting base, the lower surface of the support boat and the main supporting surface are in the same horizontal plane. The substrate to be grown is on the upper surface of the boat and has a diameter smaller than the diameter of the surface of the boat. The inclined surface on the support boat ensures that the part of the grown byproducts is less. The angle optimization through supporting the base and the by-product remain less on the surface of the support boat, so that the two sides of the support boat can be used to reduce the cleaning frequency of the support boat, and the industrialization of growing epitaxial substrate materials at high temperature is facilitated.
In addition, the upper surface, the lower surface, etc. of the boat mentioned above are defined by directions disclosed in fig. 1 and 2, and are only referred to, and are not intended to limit the components in the present application.
Although the present invention has been described in detail with reference to the embodiments, it will be apparent to those skilled in the art that modifications, equivalents, improvements, and the like can be made in the technical solutions of the foregoing embodiments or in some of the technical features of the foregoing embodiments, but those modifications, equivalents, improvements, and the like are all within the spirit and principle of the present invention.
Claims (5)
1. A boat supporting structure for growth of a wafer epitaxial substrate material comprises a supporting base and a boat supporting body, and is characterized in that the boat supporting body is a circular ring-shaped plate with an upper surface and a lower surface, inclined planes respectively connected with the upper surface and the lower surface are arranged on the edge of the boat supporting body, the boat supporting body is arranged on the upper surface of the supporting base, and the upper surface, the lower surface and the inclined planes are located at different heights;
the upper surface of the supporting base is provided with a positioning boss, and the upper surface and the lower surface of the support boat are respectively provided with a positioning groove matched with the positioning boss; the positioning boss is conical, cylindrical or polygonal, and the shape of the positioning groove is consistent with that of the positioning boss;
the upper part of the supporting base is provided with a supporting support, the supporting support is provided with a main supporting surface and an inclined supporting surface, the main supporting surface is arranged at the upper end of the inclined supporting surface, the positioning boss is arranged on the main supporting surface, and the support boat is placed on the surface of the main supporting surface.
2. The cradle structure for wafer epitaxial substrate material growth of claim 1, wherein the angle formed between the main support surface and the inclined support surface is between 3 and 25 degrees.
3. The cradle structure for wafer epitaxial substrate material growth of claim 2, wherein the inclined plane has an angle of inclination equal to an angle of inclination of the inclined support surface.
4. The cradle structure for wafer epitaxial substrate material growth of claim 3, wherein the cradle cross-section has an area greater than the area of the primary support surface.
5. The cradle structure for wafer epitaxial substrate material growth of claim 4, wherein the support pedestal and the cradle are made of silicon carbide, sapphire, graphite or quartz material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810063388.8A CN108321115B (en) | 2018-01-23 | 2018-01-23 | Boat supporting structure for growth of wafer epitaxial substrate material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810063388.8A CN108321115B (en) | 2018-01-23 | 2018-01-23 | Boat supporting structure for growth of wafer epitaxial substrate material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108321115A CN108321115A (en) | 2018-07-24 |
| CN108321115B true CN108321115B (en) | 2020-09-29 |
Family
ID=62888004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810063388.8A Active CN108321115B (en) | 2018-01-23 | 2018-01-23 | Boat supporting structure for growth of wafer epitaxial substrate material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108321115B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5654033A (en) * | 1979-10-09 | 1981-05-13 | Matsushita Electronics Corp | Heater for substrate and chemical evaporation using said heater |
| US5843237A (en) * | 1996-02-22 | 1998-12-01 | Samsung Electronics Co., Ltd. | Apparatus for manufacturing a semiconductor device having a wafer loading stage with an annular slope |
| CN102560636A (en) * | 2010-12-14 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate loading device and substrate processing device applying same |
-
2018
- 2018-01-23 CN CN201810063388.8A patent/CN108321115B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5654033A (en) * | 1979-10-09 | 1981-05-13 | Matsushita Electronics Corp | Heater for substrate and chemical evaporation using said heater |
| US5843237A (en) * | 1996-02-22 | 1998-12-01 | Samsung Electronics Co., Ltd. | Apparatus for manufacturing a semiconductor device having a wafer loading stage with an annular slope |
| CN102560636A (en) * | 2010-12-14 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate loading device and substrate processing device applying same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108321115A (en) | 2018-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102983093B (en) | A kind of graphite carrier for LED epitaxial wafer processing procedure | |
| CN103715069A (en) | Method for reducing defects in silicon carbide epitaxial film | |
| CN202543389U (en) | Graphite plate for improving wavelength uniformity of 4-inch epitaxial wafer in metal organic chemical vapor deposition (MOCVD) cabinet | |
| CN215856452U (en) | Single crystal diamond substrate table based on microwave plasma chemical vapor deposition | |
| CN204676191U (en) | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity | |
| CN108321115B (en) | Boat supporting structure for growth of wafer epitaxial substrate material | |
| CN203947179U (en) | Epitaxy chip carrying disk | |
| KR20210145256A (en) | MOCVD Reactor | |
| CN203582971U (en) | Graphite plate for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafer | |
| CN103074607A (en) | Graphite plate and reaction chamber with graphite plate | |
| CN212640659U (en) | Epitaxial seed crystal of single crystal diamond holds in palm | |
| CN101661876A (en) | Method for preparing nitride self-supported substrate | |
| CN203820884U (en) | Graphite disc for improving uniformity of MOCVD (Metal Organic Chemical Vapor Deposition) epitaxial wafers | |
| CN205821452U (en) | A kind of sectional wafer carrier | |
| CN204825126U (en) | A graphite bears dish for epitaxial wafer processing procedure of LED | |
| CN103614707B (en) | A kind of graphite plate improving MOCVD epitaxy sheet homogeneity | |
| CN114108097B (en) | Device and method for improving growth uniformity of gallium nitride crystal | |
| CN105568371A (en) | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride | |
| CN102644106A (en) | Method for controlling uniform-thickness growth of epitaxial layer of single-wafer furnace | |
| CN113488375B (en) | Method for inhibiting Crown defect of epitaxial edge | |
| CN203820926U (en) | Practical graphite plate capable of improving uniformity of MOCVD epitaxial wafer | |
| CN203768457U (en) | Graphite plate for improving quality of epitaxial wafers | |
| CN205907398U (en) | Metal organic chemistry vapour deposition device | |
| CN203513831U (en) | Silicon carbide epitaxial furnace compatible small disk base | |
| CN204714942U (en) | Improve a kind of graphite plate assembly of MOCVD epitaxy sheet wavelength uniformity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |