CN108292583B - 多个带电粒子束的装置 - Google Patents
多个带电粒子束的装置 Download PDFInfo
- Publication number
- CN108292583B CN108292583B CN201680026508.6A CN201680026508A CN108292583B CN 108292583 B CN108292583 B CN 108292583B CN 201680026508 A CN201680026508 A CN 201680026508A CN 108292583 B CN108292583 B CN 108292583B
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- CN
- China
- Prior art keywords
- electron
- micro
- lens
- source
- optical axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04924—Lens systems electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
- H01J2237/1516—Multipoles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2016/027267 WO2016145458A1 (en) | 2015-03-10 | 2016-04-13 | Apparatus of plural charged-particle beams |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108292583A CN108292583A (zh) | 2018-07-17 |
CN108292583B true CN108292583B (zh) | 2020-03-20 |
Family
ID=61141517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680026508.6A Active CN108292583B (zh) | 2016-04-13 | 2016-04-13 | 多个带电粒子束的装置 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3268979A4 (ja) |
JP (1) | JP6550478B2 (ja) |
CN (1) | CN108292583B (ja) |
WO (1) | WO2016145458A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111681939B (zh) | 2015-07-22 | 2023-10-27 | Asml荷兰有限公司 | 多个带电粒子束的装置 |
CN108738343B (zh) * | 2015-11-30 | 2022-02-01 | Asml荷兰有限公司 | 多个带电粒子束的设备 |
EP3408829B1 (en) | 2016-01-27 | 2023-10-25 | ASML Netherlands B.V. | Apparatus of plural charged-particle beams |
EP3692562A1 (en) | 2017-10-02 | 2020-08-12 | ASML Netherlands B.V. | An apparatus using charged particle beams |
US10741354B1 (en) | 2018-02-14 | 2020-08-11 | Kla-Tencor Corporation | Photocathode emitter system that generates multiple electron beams |
EP3576128A1 (en) * | 2018-05-28 | 2019-12-04 | ASML Netherlands B.V. | Electron beam apparatus, inspection tool and inspection method |
CN112567493A (zh) * | 2018-08-09 | 2021-03-26 | Asml荷兰有限公司 | 用于多个带电粒子束的装置 |
DE102018124219A1 (de) * | 2018-10-01 | 2020-04-02 | Carl Zeiss Microscopy Gmbh | Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen |
US10748739B2 (en) * | 2018-10-12 | 2020-08-18 | Kla-Tencor Corporation | Deflection array apparatus for multi-electron beam system |
WO2020078660A1 (en) * | 2018-10-19 | 2020-04-23 | Asml Netherlands B.V. | System and method for aligning electron beams in multi-beam inspection apparatus |
KR20210075184A (ko) * | 2018-11-16 | 2021-06-22 | 에이에스엠엘 네델란즈 비.브이. | 전자기 복합 렌즈 및 이러한 렌즈를 갖는 하전 입자 광학 시스템 |
JP7169452B2 (ja) | 2018-12-31 | 2022-11-10 | エーエスエムエル ネザーランズ ビー.ブイ. | マルチビーム検査装置 |
US10748743B1 (en) * | 2019-02-12 | 2020-08-18 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Device and method for operating a charged particle device with multiple beamlets |
JP7271704B2 (ja) | 2019-03-29 | 2023-05-11 | エーエスエムエル ネザーランズ ビー.ブイ. | シングルビームモードを備えたマルチビーム検査装置 |
DE102019004124B4 (de) * | 2019-06-13 | 2024-03-21 | Carl Zeiss Multisem Gmbh | Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System |
JP7303052B2 (ja) * | 2019-07-16 | 2023-07-04 | 株式会社ニューフレアテクノロジー | 多極子収差補正器の導通検査方法及び多極子収差補正器の導通検査装置 |
US11056312B1 (en) * | 2020-02-05 | 2021-07-06 | Kla Corporation | Micro stigmator array for multi electron beam system |
WO2021175685A1 (en) * | 2020-03-05 | 2021-09-10 | Asml Netherlands B.V. | Beam array geometry optimizer for multi-beam inspection system |
JP7442376B2 (ja) * | 2020-04-06 | 2024-03-04 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法 |
JP7514677B2 (ja) * | 2020-07-13 | 2024-07-11 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターンの輪郭位置取得方法 |
CN111883408A (zh) * | 2020-08-13 | 2020-11-03 | 深圳市奥谱太赫兹技术研究院 | 多电子束聚焦装置和控制方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6175122B1 (en) * | 1998-01-09 | 2001-01-16 | International Business Machines Corporation | Method for writing a pattern using multiple variable shaped electron beams |
EP2879155A1 (en) * | 2013-12-02 | 2015-06-03 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-beam system for high throughput EBI |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6630681B1 (en) * | 1999-07-21 | 2003-10-07 | Nikon Corporation | Charged-particle-beam microlithography apparatus and methods including correction of aberrations caused by space-charge effects |
AU1926501A (en) * | 1999-11-23 | 2001-06-04 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
WO2002091421A1 (fr) * | 2001-05-01 | 2002-11-14 | Nikon Corporation | Appareil a faisceau d'electrons et son utilisation pour la fabrication |
JP2003331772A (ja) * | 2002-05-16 | 2003-11-21 | Ebara Corp | 電子線装置及びデバイス製造方法 |
US7528614B2 (en) * | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
CN101414533A (zh) * | 2002-10-30 | 2009-04-22 | 迈普尔平版印刷Ip有限公司 | 电子束曝光*** |
EP2579272A1 (en) * | 2003-09-05 | 2013-04-10 | Carl Zeiss SMT GmbH | Particle-optical systems and arrangements and particle-optical components for such systems and arrangements |
JP3728315B2 (ja) * | 2003-12-16 | 2005-12-21 | キヤノン株式会社 | 電子ビーム露光装置、電子ビーム露光方法、および、デバイス製造方法 |
WO2006101116A1 (ja) * | 2005-03-22 | 2006-09-28 | Ebara Corporation | 電子線装置 |
JP5420670B2 (ja) * | 2008-10-01 | 2014-02-19 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | 静電レンズ構造体 |
JP5498488B2 (ja) * | 2009-05-27 | 2014-05-21 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置及び試料観察方法 |
EP2722868B1 (en) * | 2012-10-16 | 2018-02-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Octopole device and method for spot size improvement |
JP2014082171A (ja) * | 2012-10-18 | 2014-05-08 | Canon Inc | 照射系、描画装置および物品の製造方法 |
JP2014229481A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置 |
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2016
- 2016-04-13 EP EP16762718.1A patent/EP3268979A4/en active Pending
- 2016-04-13 WO PCT/US2016/027267 patent/WO2016145458A1/en active Application Filing
- 2016-04-13 CN CN201680026508.6A patent/CN108292583B/zh active Active
- 2016-04-13 JP JP2017567053A patent/JP6550478B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6175122B1 (en) * | 1998-01-09 | 2001-01-16 | International Business Machines Corporation | Method for writing a pattern using multiple variable shaped electron beams |
EP2879155A1 (en) * | 2013-12-02 | 2015-06-03 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-beam system for high throughput EBI |
Also Published As
Publication number | Publication date |
---|---|
JP2018513543A (ja) | 2018-05-24 |
EP3268979A4 (en) | 2019-05-08 |
WO2016145458A1 (en) | 2016-09-15 |
EP3268979A1 (en) | 2018-01-17 |
JP6550478B2 (ja) | 2019-07-24 |
CN108292583A (zh) | 2018-07-17 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
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TA01 | Transfer of patent application right |
Effective date of registration: 20190211 Address after: Holland Weide Eindhoven Applicant after: ASML Holding N.V Address before: Holland Weide Eindhoven Applicant before: Hermes-Microvision, Inc. Effective date of registration: 20190211 Address after: Holland Weide Eindhoven Applicant after: Hermes-Microvision, Inc. Address before: Floor 7, 18 Puding Road, Hsinchu East District, Taiwan, China Applicant before: Hermes-Microvision, Inc. |
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