CN108292583B - 多个带电粒子束的装置 - Google Patents

多个带电粒子束的装置 Download PDF

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Publication number
CN108292583B
CN108292583B CN201680026508.6A CN201680026508A CN108292583B CN 108292583 B CN108292583 B CN 108292583B CN 201680026508 A CN201680026508 A CN 201680026508A CN 108292583 B CN108292583 B CN 108292583B
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China
Prior art keywords
electron
micro
lens
source
optical axis
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CN201680026508.6A
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English (en)
Chinese (zh)
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CN108292583A (zh
Inventor
任伟明
李帅
刘学东
陈仲玮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Holding NV
Hermes Microvision Inc
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ASML Netherlands BV
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Publication of CN108292583A publication Critical patent/CN108292583A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04924—Lens systems electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/083—Beam forming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1516—Multipoles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
CN201680026508.6A 2016-04-13 2016-04-13 多个带电粒子束的装置 Active CN108292583B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2016/027267 WO2016145458A1 (en) 2015-03-10 2016-04-13 Apparatus of plural charged-particle beams

Publications (2)

Publication Number Publication Date
CN108292583A CN108292583A (zh) 2018-07-17
CN108292583B true CN108292583B (zh) 2020-03-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680026508.6A Active CN108292583B (zh) 2016-04-13 2016-04-13 多个带电粒子束的装置

Country Status (4)

Country Link
EP (1) EP3268979A4 (ja)
JP (1) JP6550478B2 (ja)
CN (1) CN108292583B (ja)
WO (1) WO2016145458A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111681939B (zh) 2015-07-22 2023-10-27 Asml荷兰有限公司 多个带电粒子束的装置
CN108738343B (zh) * 2015-11-30 2022-02-01 Asml荷兰有限公司 多个带电粒子束的设备
EP3408829B1 (en) 2016-01-27 2023-10-25 ASML Netherlands B.V. Apparatus of plural charged-particle beams
EP3692562A1 (en) 2017-10-02 2020-08-12 ASML Netherlands B.V. An apparatus using charged particle beams
US10741354B1 (en) 2018-02-14 2020-08-11 Kla-Tencor Corporation Photocathode emitter system that generates multiple electron beams
EP3576128A1 (en) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Electron beam apparatus, inspection tool and inspection method
CN112567493A (zh) * 2018-08-09 2021-03-26 Asml荷兰有限公司 用于多个带电粒子束的装置
DE102018124219A1 (de) * 2018-10-01 2020-04-02 Carl Zeiss Microscopy Gmbh Vielstrahl-Teilchenstrahlsystem und Verfahren zum Betreiben eines solchen
US10748739B2 (en) * 2018-10-12 2020-08-18 Kla-Tencor Corporation Deflection array apparatus for multi-electron beam system
WO2020078660A1 (en) * 2018-10-19 2020-04-23 Asml Netherlands B.V. System and method for aligning electron beams in multi-beam inspection apparatus
KR20210075184A (ko) * 2018-11-16 2021-06-22 에이에스엠엘 네델란즈 비.브이. 전자기 복합 렌즈 및 이러한 렌즈를 갖는 하전 입자 광학 시스템
JP7169452B2 (ja) 2018-12-31 2022-11-10 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査装置
US10748743B1 (en) * 2019-02-12 2020-08-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for operating a charged particle device with multiple beamlets
JP7271704B2 (ja) 2019-03-29 2023-05-11 エーエスエムエル ネザーランズ ビー．ブイ． シングルビームモードを備えたマルチビーム検査装置
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System
JP7303052B2 (ja) * 2019-07-16 2023-07-04 株式会社ニューフレアテクノロジー 多極子収差補正器の導通検査方法及び多極子収差補正器の導通検査装置
US11056312B1 (en) * 2020-02-05 2021-07-06 Kla Corporation Micro stigmator array for multi electron beam system
WO2021175685A1 (en) * 2020-03-05 2021-09-10 Asml Netherlands B.V. Beam array geometry optimizer for multi-beam inspection system
JP7442376B2 (ja) * 2020-04-06 2024-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法
JP7514677B2 (ja) * 2020-07-13 2024-07-11 株式会社ニューフレアテクノロジー パターン検査装置及びパターンの輪郭位置取得方法
CN111883408A (zh) * 2020-08-13 2020-11-03 深圳市奥谱太赫兹技术研究院 多电子束聚焦装置和控制方法

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US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
EP2879155A1 (en) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI

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US6630681B1 (en) * 1999-07-21 2003-10-07 Nikon Corporation Charged-particle-beam microlithography apparatus and methods including correction of aberrations caused by space-charge effects
AU1926501A (en) * 1999-11-23 2001-06-04 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
WO2002091421A1 (fr) * 2001-05-01 2002-11-14 Nikon Corporation Appareil a faisceau d'electrons et son utilisation pour la fabrication
JP2003331772A (ja) * 2002-05-16 2003-11-21 Ebara Corp 電子線装置及びデバイス製造方法
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
CN101414533A (zh) * 2002-10-30 2009-04-22 迈普尔平版印刷Ip有限公司 电子束曝光***
EP2579272A1 (en) * 2003-09-05 2013-04-10 Carl Zeiss SMT GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP3728315B2 (ja) * 2003-12-16 2005-12-21 キヤノン株式会社 電子ビーム露光装置、電子ビーム露光方法、および、デバイス製造方法
WO2006101116A1 (ja) * 2005-03-22 2006-09-28 Ebara Corporation 電子線装置
JP5420670B2 (ja) * 2008-10-01 2014-02-19 マッパー・リソグラフィー・アイピー・ビー．ブイ． 静電レンズ構造体
JP5498488B2 (ja) * 2009-05-27 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置及び試料観察方法
EP2722868B1 (en) * 2012-10-16 2018-02-21 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Octopole device and method for spot size improvement
JP2014082171A (ja) * 2012-10-18 2014-05-08 Canon Inc 照射系、描画装置および物品の製造方法
JP2014229481A (ja) * 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6175122B1 (en) * 1998-01-09 2001-01-16 International Business Machines Corporation Method for writing a pattern using multiple variable shaped electron beams
EP2879155A1 (en) * 2013-12-02 2015-06-03 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-beam system for high throughput EBI

Also Published As

Publication number Publication date
JP2018513543A (ja) 2018-05-24
EP3268979A4 (en) 2019-05-08
WO2016145458A1 (en) 2016-09-15
EP3268979A1 (en) 2018-01-17
JP6550478B2 (ja) 2019-07-24
CN108292583A (zh) 2018-07-17

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Effective date of registration: 20190211

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