CN108291115B - 热固化性粘接片及半导体装置的制造方法 - Google Patents
热固化性粘接片及半导体装置的制造方法 Download PDFInfo
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- CN108291115B CN108291115B CN201680070228.5A CN201680070228A CN108291115B CN 108291115 B CN108291115 B CN 108291115B CN 201680070228 A CN201680070228 A CN 201680070228A CN 108291115 B CN108291115 B CN 108291115B
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- thermosetting adhesive
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Abstract
提供能够减少半导体晶圆的翘曲,并且减少碎片的发生的热固化性粘接片及半导体装置的制造方法。在切割之前对半导体晶圆的研磨面粘合热固化性粘接片并使之固化,该热固化性粘接片具有由含有包含环氧化合物和固化剂的树脂成分、和填充剂的树脂组合物形成的热固化性粘接层,对环氧化合物的环氧当量的倒数乘以树脂成分中的环氧化合物的含有率后的值的总和为1.15E-04以上,且填充剂的配合量相对于树脂成分100质量份而言是50质量份以上。
Description
技术领域
本发明涉及为了防止切割(dicing)工序时的裂缝而增强半导体晶圆的热固化性粘接片、及半导体装置的制造方法。本申请以在日本于2015年12月14日申请的日本专利申请号特愿2015-243649为基础主张优先权,该申请通过被参照,引用至本申请。
背景技术
在半导体芯片制造工序中,切割(小片化)工序对半导体晶圆带来巨大的应力(stress)。因此,在半导体晶圆中产生被称为碎片(chipping)的裂缝,从而会提高不良率。
为了事先防止这样问题的目的,提出了在即将进行切割工序之前(背面研磨(backgrinding)后)粘合增强半导体晶圆的热固化性粘接片的方案(例如参照专利文献1。)。
然而,随着半导体晶圆的薄型化,半导体晶圆的翘曲量变大,因此有时难以粘合切割带。
现有技术文献
专利文献
专利文献1:日本特开2002-280329号公报。
发明内容
发明要解决的课题
本发明鉴于这样的现有状况而提出,提供不仅减少半导体晶圆的翘曲,而且能够减少碎片的发生的热固化性粘接片及半导体装置的制造方法。
用于解决课题的方案
为了解决前述的课题,本发明所涉及的热固化性粘接片,其特征在于:具有由含有包含环氧化合物和固化剂的树脂成分、和填充剂(filler)的树脂组合物形成的热固化性粘接层,对所述环氧化合物的环氧当量的倒数乘以所述树脂成分中的环氧化合物的含有率后的值的总和为1.15E-04以上,所述填充剂的配合量相对于树脂成分100质量份而言是50质量份以上。
另外,本发明所涉及的半导体装置的制造方法,其特征在于具有:研磨半导体晶圆的研磨(grind)工序;对所述半导体晶圆的研磨面粘合热固化性粘接片并使之固化,减少所述半导体晶圆的翘曲量的固化工序;以及在所述半导体晶圆的热固化性粘接片面粘合切割带,并进行切割的切割工序,所述热固化性粘接片具有由含有包含环氧化合物和固化剂的树脂成分、和填充剂的树脂组合物形成的热固化性粘接层,对所述环氧化合物的环氧当量的倒数乘以所述树脂成分中的环氧化合物的含有率后的值的总和为1.15E-04以上,所述填充剂的配合量相对于树脂成分100质量份而言是50质量份以上。
发明效果
依据本发明,对半导体晶圆的研磨面粘合热固化性粘接片并使之固化,从而使热固化性粘接片收缩,能够减少半导体晶圆的翘曲。因此,能够在使晶圆平坦化的状态下进行切割,因此减少碎片,能够得到高质量的半导体装置。
附图说明
[图1]图1是示出热固化性粘接片的概要的截面图。
[图2]图2是示出BG带粘贴工序的概要的截面图。
[图3]图3是示出研磨工序的概要的截面图。
[图4]图4是示出热固化性粘接片粘贴工序的概要的截面图。
[图5]图5是示出BG带剥离工序的概要的截面图。
[图6]图6是示出固化工序的概要的截面图。
[图7]图7是示出DC带粘贴工序的概要的截面图。
[图8]图8是示出切割处理工序的概要的截面图。
[图9]图9是示出扩展(expand)工序的概要を示す截面图。
[图10]图10是示出拾取工序的概要的截面图。
[图11]图11是示出安装工序的概要的截面图。
具体实施方式
以下,按照下述顺序,对本发明的实施方式详细地进行说明。
1. 热固化性粘接片
2. 半导体装置的制造方法
3. 实施例
<1. 热固化性粘接片>
本实施方式所涉及的热固化性粘接片,具有当切割半导体晶圆时,粘合到半导体晶圆的研磨面的热固化性粘接层,是在进行切割工序时增强晶圆,且防止称为碎片的裂缝的增强片。
图1是示出热固化性粘接片的概要的截面图。如图1所示,热固化性粘接片层叠有基体材料膜层11和热固化性粘接层12。
作为基体材料膜层11,能够采用由聚对苯二甲酸乙二醇酯、聚乙烯、聚丙烯、聚酯等的塑料膜、或纸、布、无纺布等组成的多孔基体材料。
热固化性粘接层12由含有包含环氧化合物和固化剂的树脂成分、和填充剂的树脂组合物形成。
作为环氧化合物,能够举出例如四对羟基苯基乙烷四缩水甘油醚环氧树脂、四对羟基甲基苯基乙烷四缩水甘油醚环氧树脂、四对羟基苯基甲烷四缩水甘油醚环氧树脂、三对羟基苯基乙烷四缩水甘油醚环氧树脂、三对羟基苯基甲烷四缩水甘油醚环氧树脂等的缩水甘油醚型环氧树脂;双环戊二烯型环氧树脂;缩水甘油胺型环氧树脂;双酚A型环氧树脂;双酚F型环氧树脂;双酚S型环氧树脂;螺环型环氧树脂;萘型环氧树脂;联苯型环氧树脂;萜烯型环氧树脂;四溴双酚A型环氧树脂;邻甲酚醛型环氧树脂;苯酚酚醛型环氧树脂;α-萘酚酚醛型环氧树脂;溴化苯酚酚醛型环氧树脂等。这些环氧树脂可以单独采用1种,也可以组合采用2种以上。作为能够在市场得到的环氧化合物的具体例,能举出三菱化学(株)的商品名“JER1009”(双酚A型环氧树脂、环氧当量2850)、商品名“JER1031S”(四羟基苯基乙烷(tetraphenylolethane)型环氧树脂、环氧当量200)、商品名“JERYL980”(液态双酚A型环氧树脂、环氧当量185)等。
在本实施方式中,对环氧化合物的环氧当量的倒数乘以树脂成分中的环氧化合物的含有率后的值的总和、即每树脂成分100质量份的环氧基的摩尔数为1.15E-04以上,优选为1.20E-04以上且2.00E-03以下。通过使每树脂成分100质量份的环氧基的摩尔数为1.15E-04以上,大幅收缩热固化性粘接层,能够减少半导体晶圆的翘曲。
此外,每树脂成分100质量份的环氧基的摩尔数,能由下述(1)式算出。
环氧基的摩尔数=环氧当量的倒数×树脂成分中的含有率 (1)
在此,环氧当量是通过以JIS K7236:2001标准化的方法来测定的、含有1当量的环氧基的树脂的质量(g/eq)。
作为固化剂,能够使用咪唑类、多元酚类、酸酐类、胺类、酰肼类、多硫醇类、路易斯酸-胺络合物类、潜伏性固化剂等。这些之中,也优选采用保存稳定性和固化物的耐热性优异的潜伏性固化剂。作为潜伏性固化剂,可举出双氰胺型潜伏性固化剂、胺加成物型潜伏性固化剂、有机酸酰肼型潜伏性固化剂、芳香族硫鎓盐型潜伏性固化剂、微胶囊型潜伏性固化剂、光固化型潜伏性固化剂等。这些之中,优选采用保存稳定性优异的微胶囊型潜伏性固化剂。作为微胶囊型潜伏性固化剂,可举出以乙烯化合物、尿素化合物、热塑性树脂胶囊化上述各固化促进剂的固化剂。作为能够在市场得到的微胶囊型潜伏性固化剂的具体例,能举出旭化成(ASAHI KASEI:旭化成ケミカルズ)(株)的商品名“Novacure(ノバキュア) HX-3941HP”(以异氰酸酯处理胺加成物型潜伏性固化剂后的微胶囊型潜伏性固化剂)等。
另外,热固化性粘接层12也可以包含弹性体、苯氧基树脂等作为膜形成树脂的聚合物来作为树脂成分。作为弹性体,可举出例如丙烯类弹性体、丁二烯类弹性体、乙烯类弹性体、丙烯类弹性体、苯乙烯类弹性体等,能够采用这些的1种或2种以上。这些之中,优选采用透明性优异的丙烯类弹性体。作为能够在市场得到的丙烯类弹性体的具体例,可举出Nagase ChemteX(株)的商品名“SG-P3”等。另外,作为苯氧基树脂,可举出例如芴型苯氧基树脂、双酚型苯氧基树脂、酚醛型苯氧基树脂、萘型苯氧基树脂、联苯型苯氧基树脂等,能够使用这些的1种或2种以上。
另外,聚合物的重均分子量(Mw)优选为5000以上150000以下,更优选为10000以上80000以下。若重均分子量(Mw)过小,则有片特性下降的倾向,若过多则有与其他成分的相溶性变差的倾向。
另外,树脂成分中的聚合物的含有率优选小于15wt%,更优选小于10%。若树脂成分中的聚合物的含有率变高,则有晶圆的翘曲控制性下降的倾向。
另外,作为树脂成分,优选添加硅烷偶联剂。作为硅烷偶联剂,能够采用(甲基)丙烯类、环氧类、氨类、巯基类、硫化物类、酰脲类等,但是在本实施方式中,优选采用环氧类硅烷偶联剂。由此,能够提高有机材料与无机材料的界面上的密合可靠性。
填充剂能够采用无机或有机的任一种,优选采用对于对准上使用的红外线具有透射性的材料。作为对于红外线具有透射性的材料,可举出例如硅石、硅、锗、石英、蓝宝石等,能够采用这些的1种或2种以上。这些之中,从激光标记视觉辨认性的观点考虑优选采用硅石。
另外,填充剂的配合量为相对于树脂成分100质量份而言50质量份以上,优选为50质量份以上100质量份以下。若填充剂的含有量过少,则有降低晶圆的翘曲量的效果下降的倾向,若过多则有密合可靠性下降的倾向。
另外,作为其他填充剂,优选添加黑色颜料等的着色剂。着色剂使得激光标记部分和其他部分产生对比差,提高激光标记视觉辨认性。作为这样的着色剂,可举出例如碳黑、钛黑、氧化钛、氧化铁等,能够采用这些的1种或2种以上。这些之中,从提高对比差的观点考虑优选使用碳黑。
另外,热固化性粘接片在波长1000nm上的透射率优选为30%以上。若该红外线透射率过低,则难以进行利用红外线的对准。
依据这样的热固化性粘接片,通过在半导体晶圆的研磨面粘合并固化,使热固化性粘接片收缩,能够减少半导体晶圆的翘曲。因此,由于能够在使晶圆平坦化的状态下进行切割,所以减少碎片,能够得到高质量的半导体装置。
<2. 半导体装置的制造方法>
接着,对采用前述的热固化性粘接片的半导体装置的制造方法进行说明。本实施方式所涉及的半导体装置的制造方法,具有:研磨半导体晶圆的研磨工序;对半导体晶圆的研磨面粘合热固化性粘接片并使之固化,减少半导体晶圆的翘曲量的工序;以及在半导体晶圆的热固化性粘接片面粘合切割带,并进行切割的切割工序。由于减少半导体晶圆的翘曲,并能够在使晶圆平坦化的状态下进行切割,所以减少碎片,能够得到高质量的半导体装置。
以下,对具体的半导体装置的制造方法进行说明。作为具体例示出的半导体装置的制造方法具有:粘贴具有粘接剂层的保护带的保护带粘贴工序(A);研磨工序(B);热固化性树脂片粘贴工序(C);保护带剥离工序(D);固化工序(E);粘着带粘贴工序(F);切割处理工序(G);扩展工序(H);拾取工序(I);以及安装工序(J)。此外,保护带剥离工序(D)也可以在热固化性树脂片粘贴工序(C)之前进行。
[(A)保护带粘贴工序]
图2是示出保护带粘贴工序的概要的截面图。在保护带粘贴工序中,在形成有突起电极22的晶圆21面粘贴保护带30。从减少空隙、提高晶圆密合性及防止晶圆磨削后的翘曲的观点考虑,粘贴保护带30的粘贴温度设为25℃以上100℃以下,优选为40℃以上80℃以下。
晶圆21具有形成在硅等的半导体表面的集成电路和被称为凸点的连接用的突起电极22。晶圆21的厚度没有特别限定,优选为200μm以上1000μm以下。
作为突起电极22,没有特别限定,但是可举出例如利用焊锡的低熔点凸点或高熔点凸点、锡凸点、银-锡凸点、银-锡-铜凸点、金凸点、铜凸点等。另外,突起电极22的高度没有特别限制,优选为10μ以上200μm以下。
保护带30被称为背面研磨带(Back Grind Tape),在后面的研磨处理工序(B)中,保护晶圆免受损伤、破裂、污染等。如图2所示,保护带30层叠有热塑性树脂层31和基体材料膜层32,在突起电极22的形成面和热塑性树脂层31相接的状态下粘合,突起电极22被埋入热塑性树脂层31。
作为热塑性树脂层31,可举出乙烯-乙酸乙烯酯共聚物(EVA:Ethylene VinylAcetate)、聚乙烯、聚丙烯、聚酰胺、聚缩醛、聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、氟化树脂、聚苯硫醚、聚苯乙烯、ABS树脂、丙烯类树脂、聚碳酸酯、聚氨酯、聚氯化乙烯、聚苯醚等,这些既可以单独使用1种,也可以并用2种以上。
作为基体材料膜层32,能够采用由聚对苯二甲酸乙二醇酯、聚乙烯、聚丙烯、聚酯等的塑料膜、或纸、布、无纺布等构成的多孔基体材料。
此外,保护带30并不限于前述的结构,也可以在各层的表面或邻接的层间形成其他层。
[(B)研磨工序]
图3是示出研磨工序的概要的截面图。在研磨工序中,对保护带30粘贴面的相反面进行研磨处理。将粘贴保护带30的晶圆21的相反面固定于磨削装置并加以研磨。在该研磨工序中,通过研磨,晶圆21的厚度成为200μm以下、进而成为50μm以下。晶圆21的厚度越小,晶圆21的翘曲量就越大。此外,晶圆21的翘曲量为将晶圆21置于平面台(X、Y轴)时的翘曲(Z轴)的最大值。
[(C)热固化性粘接片粘贴工序]
图4是示出热固化性粘接片粘贴工序的概要的截面图。在热固化性粘接片粘贴工序中,在晶圆21的研磨处理面粘贴热固化性粘接片的热固化性粘接层12。
[(D)保护带剥离工序]
图5是示出保护带剥离工序的概要的截面图。在保护带剥离工序中,剥离保护带30。
[(E)固化工序]
图6是示出固化工序的概要的截面图。在固化工序中,使热固化性粘接层12固化。作为固化方法及固化条件,能够采用使热固化型的粘接剂固化的公知方法。在固化工序中,例如,通过以80~200℃的温度、0.1~5h的时间进行固化(cure),能够使热固化性粘接层12固化。由此,热固化性粘接层12显著收缩,产生与晶圆21的翘曲相反方向的应力,因此能够使晶圆21维持在平坦的状态。
[(F)粘着带粘贴工序]
图7是示出粘着带粘贴工序的概要的截面图。在粘着带粘贴工序中,对研磨处理面粘贴粘着带40。粘着带40被称为切割带(Dicing Tape),是用于在切割工序(G)中保护晶圆21并进行固定、保持至拾取工序(I)的带。
作为粘着带40,无特别限定,能够使用公知的。一般,粘着带40具有粘着剂层和基体材料膜层。作为粘着剂层,能举出例如聚乙烯类、丙烯类、橡胶类、尿烷类等的粘着剂。另外,作为基体材料膜层,能够采用由聚对苯二甲酸乙二醇酯、聚乙烯、聚丙烯、聚酯等的塑料膜、或纸、布、无纺布等构成的多孔基体材料。另外,作为粘着带的粘贴装置及条件,无特别限定,能够采用公知的装置及条件。
[(G)切割处理工序]
图8是示出切割处理工序的概要的截面图。在切割处理工序中,对粘贴有粘着带40的晶圆21进行切割处理,得到单片的半导体芯片。作为切割方法,无特别限定,能够采用例如以切割机(Dicing Saw)切削晶圆21而切出等的公知方法。由于热固化性粘接片减少晶圆的翘曲,所以能够在使晶圆平坦化的状态下进行切割,从而能够减少碎片。
[(H)扩展工序]
图9是示出扩展工序的概要的截面图。在扩展工序中,例如使粘贴着分割后的多个半导体芯片的粘着带40沿辐射方向伸长,扩大各个半导体芯片的间隔。
[(I)拾取工序]
图10是示出拾取工序的概要的截面图。在拾取工序中,从粘着带40的下表面顶起而剥离粘贴固定在粘着带40上的半导体芯片,以夹头(collet)吸附该剥离的半导体芯片。拾取的半导体芯片被收纳到芯片托盘,或者被输送到倒装接合器的芯片搭载喷嘴。
[(J)安装工序]
图11是示出安装工序的概要的截面图。在安装工序中,例如采用NCF(非导电膜:Non Conductive Film)等的电路连接材料来连接半导体芯片和电路基板。作为电路基板,无特别限定,但是能够采用聚酰亚胺基板、环氧玻璃基板等的塑料基板、陶瓷基板等。另外,作为连接方法,能够采用使用加热接合器、回流炉等的公知方法。
依据这样的半导体装置的制造方法,使热固化性粘接片粘合到半导体晶圆的研磨面并加以固化,减少半导体晶圆的翘曲量,因此抑制碎片而能够容易进行切割。
实施例
<3. 实施例>
以下,对本发明的实施例进行说明。在本实施例中,制作热固化性粘接片,使它粘合到发生翘曲的带图案晶圆,从而制作了层叠体。然后,对热固化性粘接片的薄膜特性、切割时的碎片抑制、及晶圆的翘曲的控制性进行了评价。
[热固化性粘接片的制作]
配合下述成分,调制了树脂组合物。采用棒涂机来对剥离处理后的PET(Polyethylene terephthalate)涂敷该组合物,并在80℃的烤炉中干燥3分钟,制作了具有厚度20μm的热固化性粘接层的热固化性粘接片(保护层(cover)剥离PET(25μm)/热固化性粘接层(20μm)/基极剥离PET(50μm))。
JER1009:双酚A型环氧树脂(三菱化学(株)、环氧当量2850)
JER1031S:四羟基苯基乙烷型环氧树脂(三菱化学(株)、环氧当量200)
JERYL980:液态双酚A型环氧树脂(三菱化学(株)、环氧当量185)
Novacure HX-3941HP:以异氰酸酯处理胺加成物型潜伏性固化剂后的微胶囊型潜伏性固化剂(旭化成(ASAHI KASEI:旭化成イーMaterials)(株))
A-187:环氧类硅烷偶联剂(Momentive Performance Materials Japan合同会社)
SG-P3:弹性体(Nagase ChemteX(株)制)
AEROSIL R202:硅石(日本AEROSIL(株))
#3050B:碳黑(三菱化学(株))
[层叠体的制作]
用压力机来使厚度20μm的热固化性粘接层粘合到带图案晶圆上,在180℃、1h的条件下固化而得到了层叠体。
带图案晶圆使用厚度200μm的8英寸的晶圆。另外,带图案晶圆的平均翘曲量(样本数:10)为4mm。此外,带图案晶圆的翘曲量设为在将带图案晶圆置于平面台(X、Y轴)时的翘曲(Z轴)的最大值。
[薄膜特性的评价]
对热固化性粘接片的薄膜特性、折缝(tuck)性及层压性进行评价,将所有评价为良好的情况评价为“A”,而薄膜特性良好,折缝性或层压性的任一个评价为不良的情况评价为“B”,除这些以外的情况评价为“C”。
[切割时的碎片抑制的评价]
在层叠体的热固化性粘接层侧层压切割带,观察切割后的层叠体。将碎片造成的不良率小于5%的情况评价为“A”,而不良率为5%以上的情况评价为“B”。
[晶圆的翘曲的控制性的评价]
与带图案晶圆的翘曲量的测定同样,层叠体的翘曲量设为在将层叠体置于平面台(X、Y轴)时的翘曲(Z轴)的最大值。将层叠体的翘曲量小于1.0mm的评价为“A”,层叠体的翘曲量为1.0mm以上且小于1.5mm的评价为“B”,层叠体的翘曲量为1.5mm以上且小于2.5mm的评价为“C”,而层叠体的翘曲量为2.5mm以上的评价为“D”。
<实施例1>
如表1所示,对配合了39质量份的固体环氧化合物(JER1009)、60质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)的树脂成分100质量份,添加80质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.368E-04,相对于树脂成分100质量份的填充剂的配合量为80质量份。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为B、薄晶圆翘曲控制性的评价为B。
<实施例2>
如表1所示,对配合了38质量份的固体环氧化合物(JER1009)、59质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)的树脂成分100质量份,添加80质量份的硅石(AEROSIL R202)、2质量份的碳黑而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.361E-04,相对于树脂成分100质量份的填充剂的配合量为82质量份。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为B、薄晶圆翘曲控制性的评价为B。
<实施例3>
如表1所示,对配合了32质量份的多官能固体环氧化合物(JER1031S)、67质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)的树脂成分100质量份,添加80质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.600E-03,相对于树脂成分100质量份的填充剂的配合量为80质量份。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为B、薄晶圆翘曲控制性的评价为A。
<实施例4>
如表1所示,对配合了35质量份的多官能固体环氧化合物(JER1009)、4质量份的多官能液态环氧化合物、60质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)的树脂成分100质量份,添加80质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为3.390E-04,相对于树脂成分100质量份的填充剂的配合量为80质量份。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为B、切割时的碎片抑制的评价为A、薄晶圆翘曲控制性的评价为A。
<实施例5>
如表1所示,对配合了34质量份的多官能固体环氧化合物(JER1009)、55质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)的树脂成分90质量份,添加50质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.326E-04,相对于树脂成分100质量份的填充剂的配合量为56质量份。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为A、薄晶圆翘曲控制性的评价为A。
<实施例6>
如表1所示,对配合了34质量份的多官能固体环氧化合物(JER1009)、55质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)、5质量份的弹性体的树脂成分95质量份,添加80质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.256E-04,相对于树脂成分100质量份的填充剂的配合量为84质量份。另外,树脂成分中的弹性体的含有量为5wt%。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为A、薄晶圆翘曲控制性的评价为A。
<实施例7>
如表1所示,对配合了34质量份的多官能固体环氧化合物(JER1009)、55质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)、10质量份的弹性体的树脂成分100质量份,添加80质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.193E-04,相对于树脂成分100质量份的填充剂的配合量为80质量份。另外,树脂成分中的弹性体的含有量为10wt%。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为A、薄晶圆翘曲控制性的评价为B。
<比较例1>
如表1所示,对配合了34质量份的多官能固体环氧化合物(JER1009)、55质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)、10质量份的弹性体的树脂成分100质量份,添加30质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.193E-04,相对于树脂成分100质量份的填充剂的配合量为30质量份。另外,树脂成分中的弹性体的含有量为10wt%。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为B、切割时的碎片抑制的评价为B、薄晶圆翘曲控制性的评价为C。
<比较例2>
如表1所示,对配合了34质量份的多官能固体环氧化合物(JER1009)、55质量份的固化剂(HX-3941HP)、1质量份的耦联剂(A-187)、15质量份的弹性体的树脂成分105质量份,添加80质量份的硅石(AEROSIL R202)而调制了树脂组合物。每树脂成分100质量份的环氧基的摩尔数为1.136E-04,相对于树脂成分100质量份的填充剂的配合量为76质量份。另外,树脂成分中的弹性体的含有量为15wt%。采用该树脂组合物来制作的热固化性粘接片的薄膜特性的评价为A、切割时的碎片抑制的评价为B、薄晶圆翘曲控制性的评价为C。
[表1]
如比较例1那样填充剂的配合量过少的情况下,热固化性粘接片的收缩较小,没能显著减少晶圆的翘曲量。另外,如比较例2那样弹性体的配合量较多、每树脂成分100质量份的环氧基的摩尔数小于1.15E-04的情况下,热固化性粘接片的收缩也较小,没能显著减少晶圆的翘曲量。
另一方面,如实施例1~7那样,每树脂成分100质量份的环氧基的摩尔数为1.15E-04以上、且填充剂的配合量相对于树脂成分100质量份而言为50质量份以上,从而热固化性粘接片的收缩变大,能够显著减少晶圆的翘曲量。由此,能够在使晶圆平坦化的状态下进行切割,因此能够显著减少碎片的发生。另外,根据实施例6、实施例7、及比较例2,知晓树脂成分中的弹性体的含有率变高会降低晶圆的翘曲控制性。
标号说明
11 基体材料膜层;12 热固化性粘接层;21 晶圆;22 突起电极;30 保护带;31 热塑性树脂层;32 基体材料膜层。
Claims (7)
1.一种热固化性粘接片,具有由树脂组合物形成的热固化性粘接层,该树脂组合物含有树脂成分和填充剂,所述树脂成分包含环氧化合物、固化剂和聚合物,其中,
对所述环氧化合物的环氧当量的倒数乘以所述树脂成分中的环氧化合物的含有率后的值的总和为1.15E-04以上,
所述填充剂的配合量相对于树脂成分100质量份而言是50质量份以上,
所述树脂成分中的所述聚合物的含有率小于15wt%。
2.如权利要求1所述的热固化性粘接片,其中,
所述树脂成分中的所述聚合物的含有率小于10wt%。
3.如权利要求1或2所述的热固化性粘接片,其中,
所述填充剂的配合量相对于树脂成分100质量份而言是50质量份以上且100质量份以下。
4.如权利要求1或2所述的热固化性粘接片,其中,
所述填充剂包含黑色颜料。
5.如权利要求3所述的热固化性粘接片,其中,
所述填充剂包含黑色颜料。
6.一种半导体装置的制造方法,具有:
研磨半导体晶圆的研磨工序;
对所述半导体晶圆的研磨面粘贴热固化性粘接片的热固化性粘接片粘贴工序;
使所述热固化性片固化,减少所述半导体晶圆的翘曲量的固化工序;
对所述半导体晶圆的热固化性粘接片面粘贴切割带的切割带粘贴工序;以及
对粘贴有切割带的晶圆进行切割处理,得到单片的半导体芯片的切割处理工序,
所述热固化性粘接片具有由树脂组合物形成的热固化性粘接层,该树脂组合物含有树脂成分和填充剂,所述树脂成分包含环氧化合物、固化剂和聚合物,
对所述环氧化合物的环氧当量的倒数乘以所述树脂成分中的环氧化合物的含有率后的值的总和为1.15E-04以上,
所述填充剂的配合量相对于树脂成分100质量份而言是50质量份以上,
所述树脂成分中的所述聚合物的含有率小于15wt%。
7.如权利要求6所述的半导体装置的制造方法,其中,
在所述研磨工序中,研磨至厚度成为200μm以下为止。
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