CN108287589A - Band-gap reference circuit and its operational amplifier - Google Patents
Band-gap reference circuit and its operational amplifier Download PDFInfo
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- CN108287589A CN108287589A CN201810064039.8A CN201810064039A CN108287589A CN 108287589 A CN108287589 A CN 108287589A CN 201810064039 A CN201810064039 A CN 201810064039A CN 108287589 A CN108287589 A CN 108287589A
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- triode
- operational amplifier
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- electrically connected
- gap reference
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- Automation & Control Theory (AREA)
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Abstract
The invention discloses a kind of band-gap reference circuit and its operational amplifier, the operational amplifier includes first input end, the second input terminal and the first output end, and the operational amplifier further includes power supply circuit；The first input end includes the first triode, and second input terminal includes the second triode；The emitter area of first triode is more than the emitter area of second triode；First output end is used for outputting drive voltage.The present invention simplifies the operational amplifier configuration in existing band-gap reference circuit by improving the operational amplifier in band-gap reference circuit, reduce because operational amplifier mismatch caused by circuit gain error；Meanwhile with simple in structure, another biasing circuits are not needed, without additional circuit structure, and reduce current loss.
Description
Technical field
The present invention relates to IC design technical field, more particularly to a kind of band-gap reference circuit and its operation amplifier
Device.
Background technology
As shown in Figure 1, being existing band-gap reference circuit, made using the base-emitter voltage difference VBE of NPN triode
For the band-gap reference circuit of positive temperature coefficient.The band-gap reference circuit is based primarily upon the saturation current of triode Q0 and triode Q1
Is is related to the band-gap energy of semi-conducting material, specific as follows to state formula：
Wherein, VT=KT/q；
ICIndicate transistor collector electric current, VTIndicate the voltage equivalent of temperature；K is 1.38 × 10^- of Boltzmann constant
23J/K, T are thermodynamic temperature, i.e. absolute temperature (300K), and q is 1.6 × 10^-19C of electron charge.At normal temperatures, VT≈
26mV。
The band-gap reference circuit, the output voltage of the band-gap reference circuit are designed according to the temperature characterisitic of saturation current Is
VBG has the characteristics that not vary with temperature.
Specifically, output voltage VBG is driven by the output voltage of operational amplifier A.Wherein, triode Q0 and triode
The emitter area ratio of Q1 is n：1 (n value ranges are 2~20), to generate different voltages size and different temperature coefficients
VBE0 and VBE1；The corresponding VBE0 of triode Q0 are negative temperature coefficient.The input two of operational amplifier A clamper operational amplifier
Terminal voltage is applied to resistance to the difference DELTA VBE (Δ VBE is positive temperature coefficient) of the VBE of triode Q0 and triode Q1
On R0, the electric current on the left side branch R0 of control circuit；The output voltage VBG calculation formula of band-gap reference circuit are as follows：
VBG=VBE1+ Δs VBE × R/R0
By above-mentioned calculation formula it is found that suitably adjusting the proportionate relationship of R and R0, Positive and Negative Coefficient Temperature item can be offset, to
Obtain the voltage of a zero-temperature coefficient.
But there are following problems for the band-gap reference circuit of the prior art：1) in order to reduce the mismatch of circuit, operation
The input pipe of amplifier A must be made big；2) operational amplifier A needs bias current to ensure its work, to increase volume
Outer circuit structure and current loss；3) according to the Output Voltage Formula of band-gap reference it is found that the mismatch of operational amplifier A causes
Error voltage be easy to equally be added on resistance R0, be then amplified by resistance ratio relationship R/R0, it is whole to increase
The gain error of a circuit.
Invention content
The technical problem to be solved by the present invention is in order to overcome band-gap reference circuit in the prior art to exist to reduce
The input pipe of the mismatch of circuit, operational amplifier existing for band-gap reference circuit need to be made big；Operational amplifier needs to bias
Electric current ensures its work；Gain error of the entire circuit easy to increase of error voltage caused by the mismatch of operational amplifier etc. lacks
It falls into, and it is an object of the present invention to provide a kind of band-gap reference circuit and its operational amplifier.
The present invention is to solve above-mentioned technical problem by following technical proposals：.
The present invention provides a kind of operational amplifier for band-gap reference circuit, and the operational amplifier includes the first input
End, the second input terminal and the first output end, the operational amplifier further include power supply circuit；
The power supply circuit is used to power to the operational amplifier；
The first input end includes the first triode, and second input terminal includes the second triode；
The base stage of first triode is electrically connected with the positive voltage terminal in the band-gap reference circuit, the one or three pole
The collector of pipe is electrically connected with one end of the power supply circuit, the emitter ground connection of first triode；
The base stage of second triode is electrically connected with the voltage negative terminal in the band-gap reference circuit, the two or three pole
The collector of pipe is electrically connected with the other end of the power supply circuit, the emitter ground connection of second triode；
The emitter area of first triode is more than the emitter area of second triode；
First output end is used for outputting drive voltage.
Preferably, the power supply circuit includes the first PMOS tube and the second PMOS tube；
The source electrode of first PMOS tube is electrically connected with the source electrode of second PMOS tube；
The grid of first PMOS tube is electrically connected with the grid of second PMOS tube；
The drain electrode of first PMOS tube is electrically connected with the collector of first triode；
The drain electrode of second PMOS tube is electrically connected with the collector of second triode.
Preferably, the operational amplifier includes biasing circuit；
The output end of the biasing circuit respectively with first PMOS tube drain electrode and first PMOS tube grid
Electrical connection；
The biasing circuit is for starting the operational amplifier.
Preferably, the operational amplifier further includes buffer；
The input terminal of the buffer is electrically connected with the drain electrode of second PMOS tube, and the output end of the buffer is institute
State the first output end；
The buffer be used for the output voltage of drain electrode of the second PMOS tube carry out isolation processing.
Preferably, first triode and second triode are NPN type triode；
The emitter area of first triode is M times of the emitter area of second triode, wherein M=
m2- 1, m are the positive integer more than 1.
Preferably, the operational amplifier further includes first resistor；
The transmitting with the emitter of first triode and second triode respectively of one end of the first resistor
Pole is electrically connected, the other end ground connection of the first resistor.
The present invention also provides a kind of band-gap reference circuit, the band-gap reference circuit includes above-mentioned operational amplifier.
Preferably, the band-gap reference circuit further includes third transistor, the 4th triode and second resistance；
The first input end is electrically connected with the collector of first output end and the third transistor respectively；
Second input terminal is electrically connected with the collector of first output end and the 4th triode respectively；
The transmitting with the emitter of the third transistor and the 4th triode respectively of one end of the second resistance
Pole is electrically connected, the other end ground connection of the second resistance.
Preferably, the band-gap reference circuit further includes 3rd resistor, the 4th resistance and the 5th resistance；
One end of the 3rd resistor is electrically connected with the first input end, and the other end is electrically connected with first output end
It connects；
One end of 4th resistance is electrically connected with second input terminal, and the other end is electrically connected with first output end
It connects；
One end of 5th resistance is electrically connected with second input terminal, the other end of the 5th resistance and described the
The collector of four triodes is electrically connected.
Preferably, the resistance value of the 3rd resistor is equal with the resistance value of the 4th resistance；And/or
The emitter area of the third transistor is N times of the emitter area of the 4th triode, wherein N=
n2- 1, n are the positive integer more than 1.
The positive effect of the present invention is that：
The present invention is simplified by improving the operational amplifier in band-gap reference circuit in existing band-gap reference circuit
Operational amplifier configuration, reduce because operational amplifier mismatch caused by circuit gain error；Meanwhile with structure letter
It is single, another biasing circuits are not needed, without additional circuit structure, and reduce current loss.
Description of the drawings
Fig. 1 is the circuit structure diagram of the existing band-gap reference circuit of the present invention；
Fig. 2 is the circuit structure diagram of the operational amplifier for band-gap reference circuit of present pre-ferred embodiments；
Fig. 3 is the circuit structure diagram of the band-gap reference circuit of present pre-ferred embodiments.
Specific implementation mode
It is further illustrated the present invention below by the mode of embodiment, but does not therefore limit the present invention to the reality
It applies among a range.
As shown in Figures 2 and 3, the operational amplifier 1 for band-gap reference circuit of the present embodiment includes first input end
A, the second input terminal b, the first output end c, power supply circuit 2, biasing circuit 3, buffer 4 and first resistor R1.
The first input end a includes the second triode Q3 including the first triode Q2, the second input terminal b.
Wherein, the first triode Q2 and the second triode Q3 is NPN type triode；And the one or three pole
The emitter area of pipe Q2 is more than the emitter area of the second triode Q3.That is, the first input of the operational amplifier 1
Hold a and the second input terminal b compared to traditional operational amplifier, using the triode of different emitter areas as Differential Input
Right, area ratio is M：1, wherein M=m2- 1, m are positive integer more than 1, for reducing the gain error of operational amplifier 1,
Reduce the imbalance of the band-gap reference circuit.
Specifically, the emitter area of the first triode Q2 is the 4 of the emitter area of the second triode Q3
~16 times, i.e. the value range of M is 4~16.The base stage of the first triode Q2 and the voltage in the band-gap reference circuit
Anode is electrically connected, and the collector of the first triode Q2 is electrically connected with one end of the power supply circuit 2, first triode
The emitter of Q2 is grounded.
The base stage of the second triode Q3 is electrically connected with the voltage negative terminal in the band-gap reference circuit, and the described 2nd 3
The collector of pole pipe Q3 is electrically connected with the other end of the power supply circuit 2, the emitter ground connection of the second triode Q3.
The first output end c is used for outputting drive voltage.
Wherein, the power supply circuit 2 is used to power to the operational amplifier 1.
Specifically, the power supply circuit 2 includes the first PMOS tube PM1 and the second PMOS tube PM2.
The source electrode of the first PMOS tube PM1 is electrically connected with the source electrode of the second PMOS tube PM2；
The grid of the first PMOS tube PM1 is electrically connected with the grid of the second PMOS tube PM2；
The drain electrode of the first PMOS tube PM1 is electrically connected with the collector of the first triode Q2；
The drain electrode of the second PMOS tube PM2 is electrically connected with the collector of the second triode Q3.
The output end of the biasing circuit 3 respectively with the drain electrode of the first PMOS tube PM1 and the first PMOS tube PM1
Grid electrical connection；
The biasing circuit 3, without additionally accessing current source, simplifies circuit for starting the operational amplifier
Complexity, to realize that band-gap reference circuit can work independently independently of other modules.
The input terminal of the buffer 4 is electrically connected with the drain electrode of the second PMOS tube PM2, the output of the buffer 4
End is electrically connected with the ends VBG of band-gap reference circuit；The output end of the buffer 4 is the first output end c.
The buffer 4 be used for the output voltage of drain electrode of the second PMOS tube PM2 carry out isolation processing, and according to every
Treated voltage output driving voltage absolutely.
Specifically, the operational amplifier in actual application, since electric current is respectively from the operational amplifier
The base stage of the first triode Q2 and the input of the base stage of the second triode Q3, if the electric current of input is not over described
Buffer 4 carries out isolation processing, but is directly exported by the first output end c, to drive the output with operational amplifier
The triode for holding electrical connection, then can introduce error, so as to cause the mismatch of operational amplifier in operational amplifier；Therefore, it needs
The buffer 4 is set in the output end of operational amplifier, to completely cut off the first input end a from the operational amplifier respectively
The electric current for inputting with the second input terminal b, and being exported from the first output end c.
One end of the first resistor R1 respectively with the emitter of the first triode Q2 and the second triode Q3
Emitter electrical connection, the first resistor R1 the other end ground connection.
As shown in figure 3, the band-gap reference circuit of the present embodiment includes operational amplifier 1, further include third transistor Q4,
Four triode Q5, second resistance R2,3rd resistor R3, the 4th resistance R4 and the 5th resistance R5.
The first input end a is electrically connected with the collector of the first output end c and the third transistor Q4 respectively；
The second input terminal b is electrically connected with the collector of the first output end c and the 4th triode Q5 respectively；
One end of the second resistance R2 respectively with the emitter of the third transistor Q4 and the 4th triode Q5
Emitter electrical connection, the second resistance R2 the other end ground connection.
Wherein, the second resistance R2 is used to increase the input voltage of operational amplifier 1, so that operational amplifier
The first triode Q2 and the second triode Q3 can be worked normally.Meanwhile it may be implemented to adjust band-gap reference circuit
With the dc point of operational amplifier 1.
One end of the 3rd resistor R3 is electrically connected with the first input end a, the other end and the first output end c electricity
Connection；
One end of the 4th resistance R4 is electrically connected with the second input terminal b, the other end and the first output end c electricity
Connection；
One end of the 5th resistance R5 is electrically connected with the second input terminal b, the other end of the 5th resistance R5 with
The collector of the 4th triode Q5 is electrically connected.
Wherein, the resistance value of the 3rd resistor R3 is equal with the resistance value of the 4th resistance R4.
In the present invention, the area ratio of the emitter of third transistor Q4 and the 4th triode Q5 is N：1, wherein N=
n2- 1, n are the positive integer more than 1.Preferably, the emitter area of the third transistor Q4 is the 4th triode Q5's
2~20 times of emitter area, the i.e. value range of N are 2~20.
Since band-gap reference circuit is generally as main circuit, and in view of the controllability of circuit design, in actual design,
Input terminal (the i.e. base stage of the first triode Q2 and the second triode Q3 of operational amplifier can be reduced using larger electric current
Base stage) the influence using electric current to itself circuit, be typically designed the transmitting pole-face of third transistor Q4 and the 4th triode Q5
The ratio between the emitter area of base stage and second triode Q3 of the ratio between the product more than the first triode Q2, to prevent operational amplifier from drawing
The variable entered causes band-gap reference circuit excessive influence.
Wherein, in a semiconductor material, the third transistor Q4 of two pairings in the band-gap reference circuit of the present embodiment
It is as follows with the formula of the difference DELTA VBE of the voltage VBE of the base-emitter of the 4th triode Q5：
ΔVBE=VTln(MN)
I.e. by Δ V in existing band-gap reference circuitBE=VTLn (N) is increased to Δ VBE=VTln(MN)；
Wherein, the area ratio of the emitter of the first triode Q2 and the second triode Q3 is M：1；Third transistor Q4 and
The area ratio of the emitter of four triode Q5 is N：1；It is this to design the area for greatly saving triode, reduce operational amplifier
The error that 1 input brings pipe mismatch to circuit；Increased Δ VBE reduces the value of the R/R0 in above-mentioned background technology, from
And reduce the amplification factor of the mismatch of operational amplifier.
The band-gap reference circuit of the present embodiment and its operation principle of operational amplifier are as follows：
Start-up circuit, makes the output voltage VBP of biasing circuit 3 pull down to ground, and the electric current of power supply circuit 2 passes through operation amplifier
The right branch of device 1 makes the first output end c set height；As shown in figure 3, the first output end c of operational amplifier 1 and band-gap reference electricity
The output voltage VBG electrical connections on road, providing voltage makes two branches of band-gap reference circuit be connected, and the second of operational amplifier 1
Input terminal b obtains negative voltage feedback, and operational amplifier 1 is made to be connected；When operational amplifier 1 have certain gain after, then clamper its
Input difference is to the voltage at both ends and it is made to be consistent, and due to the presence of negative voltage feedback, makes band-gap reference circuit gradually just
Often work, reaches the final balance of band-gap reference circuit.
The operational amplifier that the present embodiment uses simplifies the operational amplifier configuration in existing band-gap reference circuit, drops
The low mismatch because of operational amplifier gain error caused by circuit；It, need not separately plus biased electrical meanwhile with simple in structure
Road without additional circuit structure, and reduces current loss.
Although specific embodiments of the present invention have been described above, it will be appreciated by those of skill in the art that these
It is merely illustrative of, protection scope of the present invention is defined by the appended claims.Those skilled in the art is not carrying on the back
Under the premise of from the principle and substance of the present invention, various changes or modifications can be made to these embodiments, but these are changed
Protection scope of the present invention is each fallen with modification.
Claims (10)
1. a kind of operational amplifier for band-gap reference circuit, the operational amplifier includes first input end, the second input
End and the first output end, which is characterized in that the operational amplifier further includes power supply circuit；
The power supply circuit is used to power to the operational amplifier；
The first input end includes the first triode, and second input terminal includes the second triode；
The base stage of first triode is electrically connected with the positive voltage terminal in the band-gap reference circuit, first triode
Collector is electrically connected with one end of the power supply circuit, the emitter ground connection of first triode；
The base stage of second triode is electrically connected with the voltage negative terminal in the band-gap reference circuit, second triode
Collector is electrically connected with the other end of the power supply circuit, the emitter ground connection of second triode；
The emitter area of first triode is more than the emitter area of second triode；
First output end is used for outputting drive voltage.
2. being used for the operational amplifier of band-gap reference circuit as described in claim 1, which is characterized in that the power supply circuit packet
Include the first PMOS tube and the second PMOS tube；
The source electrode of first PMOS tube is electrically connected with the source electrode of second PMOS tube；
The grid of first PMOS tube is electrically connected with the grid of second PMOS tube；
The drain electrode of first PMOS tube is electrically connected with the collector of first triode；
The drain electrode of second PMOS tube is electrically connected with the collector of second triode.
3. being used for the operational amplifier of band-gap reference circuit as claimed in claim 2, which is characterized in that the operational amplifier
Including biasing circuit；
Grid of the output end of the biasing circuit respectively with the drain electrode of first PMOS tube and first PMOS tube is electrically connected
It connects；
The biasing circuit is for starting the operational amplifier.
4. being used for the operational amplifier of band-gap reference circuit as claimed in claim 2, which is characterized in that the operational amplifier
It further include buffer；
The input terminal of the buffer is electrically connected with the drain electrode of second PMOS tube, and the output end of the buffer is described the
One output end；
The output voltage that the buffer is used for the drain electrode to second PMOS tube carries out isolation processing.
5. being used for the operational amplifier of band-gap reference circuit as described in claim 1, which is characterized in that first triode
It is NPN type triode with second triode.
6. being used for the operational amplifier of band-gap reference circuit as claimed in claim 2, which is characterized in that the operational amplifier
It further include first resistor；
One end of the first resistor is electric with the emitter of the emitter of first triode and second triode respectively
Connection, the other end ground connection of the first resistor.
7. a kind of band-gap reference circuit, which is characterized in that the band-gap reference circuit includes such as any one of claim 1-6 institutes
The operational amplifier stated.
8. band-gap reference circuit as claimed in claim 7, which is characterized in that the band-gap reference circuit further includes the three or three pole
Pipe, the 4th triode and second resistance；
The first input end is electrically connected with the collector of first output end and the third transistor respectively；
Second input terminal is electrically connected with the collector of first output end and the 4th triode respectively；
One end of the second resistance is electric with the emitter of the emitter of the third transistor and the 4th triode respectively
Connection, the other end ground connection of the second resistance.
9. band-gap reference circuit as claimed in claim 8, which is characterized in that the band-gap reference circuit further includes third electricity
Resistance, the 4th resistance and the 5th resistance；
One end of the 3rd resistor is electrically connected with the first input end, and the other end is electrically connected with first output end；
One end of 4th resistance is electrically connected with second input terminal, and the other end is electrically connected with first output end；
One end of 5th resistance is electrically connected with second input terminal, the other end and the described 4th 3 of the 5th resistance
The collector of pole pipe is electrically connected.
10. band-gap reference circuit as claimed in claim 9, which is characterized in that the resistance value of the 3rd resistor and the described 4th
The resistance value of resistance is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810064039.8A CN108287589A (en) | 2018-01-23 | 2018-01-23 | Band-gap reference circuit and its operational amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810064039.8A CN108287589A (en) | 2018-01-23 | 2018-01-23 | Band-gap reference circuit and its operational amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108287589A true CN108287589A (en) | 2018-07-17 |
Family
ID=62835824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810064039.8A Pending CN108287589A (en) | 2018-01-23 | 2018-01-23 | Band-gap reference circuit and its operational amplifier |
Country Status (1)
| Country | Link |
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| CN (1) | CN108287589A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110083193A (en) * | 2019-03-29 | 2019-08-02 | 南京中感微电子有限公司 | Bandgap Reference Voltage Generation Circuit |
| CN110620556A (en) * | 2019-08-01 | 2019-12-27 | 中国科学院微电子研究所 | Heterogeneous integrated radio frequency amplifier structure |
| CN114625200A (en) * | 2022-02-17 | 2022-06-14 | 普冉半导体(上海)股份有限公司 | Operational amplifier and band-gap reference source circuit |
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| CN103488227A (en) * | 2013-09-09 | 2014-01-01 | 广州金升阳科技有限公司 | Band-gap reference voltage circuit |
| CN104503528A (en) * | 2014-12-24 | 2015-04-08 | 电子科技大学 | Low-noise band-gap reference circuit reducing detuning influence |
| CN105955382A (en) * | 2016-06-23 | 2016-09-21 | 电子科技大学 | Self-biasing high-power-supply-rejection-ratio reference circuit |
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| JPH10303658A (en) * | 1997-02-27 | 1998-11-13 | Toshiba Microelectron Corp | Differential amplifier, reference voltage generating circuit, booster circuit and semiconductor storage device |
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| CN102279610A (en) * | 2011-04-13 | 2011-12-14 | 清华大学 | Sub-threshold reference voltage source with extremely low power consumption and wide temperature range |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110083193A (en) * | 2019-03-29 | 2019-08-02 | 南京中感微电子有限公司 | Bandgap Reference Voltage Generation Circuit |
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| CN110620556A (en) * | 2019-08-01 | 2019-12-27 | 中国科学院微电子研究所 | Heterogeneous integrated radio frequency amplifier structure |
| CN110620556B (en) * | 2019-08-01 | 2023-06-02 | 中国科学院微电子研究所 | Heterogeneous integrated radio frequency amplifier structure |
| CN114625200A (en) * | 2022-02-17 | 2022-06-14 | 普冉半导体(上海)股份有限公司 | Operational amplifier and band-gap reference source circuit |
| CN114625200B (en) * | 2022-02-17 | 2024-04-12 | 普冉半导体(上海)股份有限公司 | Operational amplifier and band gap reference source circuit |
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Application publication date: 20180717 |
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