CN108281493B - 二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 - Google Patents
二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 Download PDFInfo
- Publication number
- CN108281493B CN108281493B CN201810011780.8A CN201810011780A CN108281493B CN 108281493 B CN108281493 B CN 108281493B CN 201810011780 A CN201810011780 A CN 201810011780A CN 108281493 B CN108281493 B CN 108281493B
- Authority
- CN
- China
- Prior art keywords
- tungsten
- photodetector
- insulating substrate
- schottky junction
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- KVXHGSVIPDOLBC-UHFFFAOYSA-N selanylidenetungsten Chemical class [Se].[W] KVXHGSVIPDOLBC-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 36
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000004044 response Effects 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 claims abstract description 7
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 230000035945 sensitivity Effects 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 235000019441 ethanol Nutrition 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000005641 tunneling Effects 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 32
- 230000008859 change Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- -1 is taken out Chemical compound 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公开一种二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备,属于材料应用技术领域。本发明包括绝缘衬底、隧穿层、金属电极、二硒化钨纳米片。本发明利用光照下二硒化钨和金属形成的肖特基结所产生的光伏效应,实现器件自驱动探测,垂直结构扩大结区受光面积,控制二硒化钨层数实现探测波长范围可调,隧穿层抑制反向电流的增加,提高了探测器的灵敏度和响应时间。
Description
技术领域
本发明属于材料应用技术领域,特别是涉及一种二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备。
背景技术
2011年,B.Radisavl jevic等人发现以单层二硫化钼为代表的过渡金属硫族化合物,不同于石墨烯的零带隙,这类层状材料具有非常优越的光、电、磁等物理化学性能,在电子学、光电子学领域受到了广泛的关注,被认为是发展下一代纳米光电器件的候选者。二硒化钨作为典型的双极型二维半导体,层与层之间通过范德华键作用连接;带隙可由多层的间接带隙(1.3 电子伏特)变化到单层的直接带隙(1.67电子伏特)。其高载流子迁移率(空穴迁移率250平方厘米每伏每秒),电子迁移率160平方厘米每伏每秒),超快响应时间(1皮秒),可作为电子器件、光电探测器等技术领域的优异候选者。
目前基于二硒化钨的光电探测器主要有二硒化钨光晶体管和PN结型光电探测器。虽然二硒化钨光晶体管可以实现高的光响应度,但响应时间长,且需要外加电源。虽然结型探测器可以解决响应时间长、外加电源的问题,但同质PN结型光电探测器需要复杂的掺杂工艺,异质PN结需要多种材料复合,增加器件成本。
发明内容
为了解决上述问题,本发明提出了一种二硒化钨和金属垂直型肖特基结自驱动光电探测器。该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对,利用光照下肖特基结所产生的光伏效应,实现器件自驱动探测,垂直结构扩大了结区有效光照面积,隧穿层抑制反向光电流的增加,提高了探测器的灵敏度和响应时间。
本发明的技术方案是:一种二硒化钨和金属垂直型肖特基结自驱动光电探测器,该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对,在光照下二硒化钨和金属肖特基结所产生的光伏效应,实现器件自驱动探测,垂直结构扩大结区受光面积,控制二硒化钨层数实现探测波长范围可调,隧穿层抑制反向电流的增加,提高了探测器的灵敏度和响应时间。
进一步,该自驱动光电探测器包括源极,隧穿层,二硒化钨层,漏极,绝缘衬底;
其中,所述源极设置在所述绝缘衬底一侧的上端,所述隧穿层覆盖在所述源极和所述绝缘衬底的另一侧,所述二硒化钨层覆盖在所述隧穿层上,所述漏极设置在所述绝缘衬底的另一侧的所述二硒化钨层上端。
进一步,所述隧穿层厚度为0.2-2纳米。
进一步,所述二硒化钨层为通过气相沉积法或者机械剥离获得二硒化钨纳米片,所述二硒化钨纳米片厚度为0.7-100纳米。
进一步,所述源极为铝、钛、铬或银电极,厚度为20-100纳米。
进一步,所述隧穿层为三氧化二铝、二氧化铪或二氧化硅,
进一步,所述的漏极包括钯、铂、金、石墨烯、有机电极,厚度为0.7-100纳米。
进一步,所述的绝缘衬底为二氧化硅衬底、蓝宝石衬底或氮化铝衬底。
本发明的另一目的是提供上述自驱动光电探测器的制备方法,该方法具体包括以下步骤:
步骤1. 将绝缘衬底依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟,取出,吹干;
步骤2. 利用热蒸镀或电子束蒸镀在绝缘衬底上蒸镀源极;
步骤3. 采用原子层沉积技术在源极上沉积隧穿层;
步骤4. 将二硒化钨转移至源极上;
步骤5. 在二硒化钨上制备漏极,即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。
进一步,所述二硒化钨和金属垂直肖特基结自驱动光电探测器的对633纳米光的响应时间上升沿0.05秒,下降沿0.08秒,暗电流达到10-15安,光电流为10-8安。
本发明的有益效果是,由于采用上述技术方案,本发明的二硒化钨和金属垂直型肖特基结自驱动光电探测器,利用二硒化钨纳米片与金属形成的肖特基结有效分离光生电子空穴对,在光照下利用肖特基结所产生的光伏效应,实现自驱动器件探测,垂直结构扩大了结区有效光照面积,隧穿层抑制反向光电流的增加,提高了探测器的灵敏度和响应时间。
附图说明
图1为一种二硒化钨和金属垂直肖特基结自驱动光电探测器的器件示意图;
图2为实例一中肖特基型自驱动光电探测器的时间-电流曲线;
图中:
1.源极、2.隧穿层、3.二硒化钨纳米片、4.漏极、5.绝缘衬底。
具体实施方式
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
下面结合实例对本发明的技术方案进行详细说明,显然,所描述的实例仅仅是本发明中很小的一部分,而不是全部的实例。基于本发明中的实例,本领域人员在没有做出创造性劳动前提下所获得的所有其他实例,都属于本发明保护的范围。
如图1所示,本发明一种二硒化钨和金属垂直型肖特基结自驱动光电探测器,该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对,在光照下二硒化钨和金属肖特基结所产生的光伏效应,实现器件自驱动探测,垂直结构扩大结区受光面积,控制二硒化钨层数实现探测波长范围可调,隧穿层抑制反向电流的增加,提高了探测器的灵敏度和响应时间。
该自驱动光电探测器包括源极1,隧穿层2,二硒化钨层3,漏极4,绝缘衬底5;
其中,所述源极1设置在所述绝缘衬底5一侧的上端,所述隧穿层2覆盖在所述源极1和所述绝缘衬底5的另一侧,所述二硒化钨层3覆盖在所述隧穿层2上,所述漏极4设置在所述绝缘衬底5的另一侧的所述二硒化钨层3上端。
所述隧穿层2厚度为0.2-2纳米。
所述二硒化钨层3为通过气相沉积法或者机械剥离获得二硒化钨纳米片,所述二硒化钨纳米片厚度为0.7-100纳米。
所述源极1为铝、钛、铬或银电极,厚度为20-100纳米。
所述隧穿层2为三氧化二铝、二氧化铪或二氧化硅,
所述的漏极4为钯、铂、金、石墨烯或有机电极,厚度为0.7-100纳米。
所述的绝缘衬底2为二氧化硅衬底、蓝宝石衬底或氮化铝衬底。
本发明一种制备上述的自驱动光电探测器的方法,该方法具体包括以下步骤:
步骤1. 将绝缘衬底依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟,取出,吹干;
步骤2. 利用热蒸镀或电子束蒸镀在绝缘衬底上蒸镀源极;
步骤3. 采用原子层沉积技术在源极上沉积隧穿层;
步骤4. 将二硒化钨转移至源极上;
步骤5. 在二硒化钨上制备漏极,即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。
所述二硒化钨和金属垂直肖特基结自驱动光电探测器的对633纳米光的响应时间上升沿0.05秒,下降沿0.08秒,暗电流达到10-15安,光电流为10-8安。
实施例1
二硒化钨和金属垂直肖特基结自驱动光电探测器,包括源极铝电极,隧穿层三氧化二铝,机械剥离的3纳米厚二硒化钨,漏极钯电极,绝缘衬底二氧化硅。铝电极厚度为20纳米;三氧化二铝厚度为0.5纳米;钯电极厚度为30纳米。光电探测器具体制备步骤为:首先,将绝缘衬底二氧化硅依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟,取出,氮气吹干;接着,利用热蒸镀或电子束蒸镀在二氧化硅上蒸镀铝电极;然后,采用原子层沉积技术在铝电极上沉积隧穿层三氧化二铝;再次,将二硒化钨转移至隧穿层上;最后,在二硒化钨上制备钯电极,即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。光电探测器的对633纳米光的响应时间上升沿0.05秒,下降沿0.08秒,暗电流达到10-15安,光电流为10-8安。
实施例2
二硒化钨和金属垂直肖特基结自驱动光电探测器,包括源极铝电极,隧穿层三氧化二铝,机械剥离的1纳米厚二硒化钨,漏极钯电极,绝缘衬底二氧化硅。钛电极厚度为20纳米;三氧化二铝厚度为0.3纳米;钯电极厚度为50纳米。光电探测器具体制备步骤为:首先,将绝缘衬底二氧化硅依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟,取出,氮气吹干;接着,利用热蒸镀或电子束蒸镀在二氧化硅上蒸镀钛电极;然后,采用原子层沉积技术在钛电极上沉积隧穿层三氧化二铝;再次,将二硒化钨转移至隧穿层上;最后,在二硒化钨上制备钯电极,即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。光电探测器的对白光的响应时间上升沿0.01秒,下降沿0.03秒,暗电流达到10-15安,光电流为10-8安。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (7)
1.一种二硒化钨和金属垂直型肖特基结自驱动光电探测器,其特征在于,该探测器利用二硒化钨纳米片与金属形成的肖特基结来有效分离光生电子空穴对,在光照下二硒化钨和金属肖特基结所产生的光伏效应,实现器件自驱动探测,垂直结构扩大结区受光面积,控制二硒化钨层数实现探测波长范围可调,隧穿层抑制反向电流的增加,提高了探测器的灵敏度和响应时间;该自驱动光电探测器包括源极,隧穿层,二硒化钨层,漏极,绝缘衬底;
其中,所述源极设置在所述绝缘衬底一侧的上端,所述隧穿层覆盖在所述源极和所述绝缘衬底的另一侧,所述二硒化钨层覆盖在所述隧穿层上,所述漏极设置在所述绝缘衬底的另一侧的所述二硒化钨层上端;所述隧穿层为三氧化二铝、二氧化铪或二氧化硅。
2.根据权利要求1所述的自驱动光电探测器,其特征在于,所述隧穿层厚度为0.2-2纳米。
3.根据权利要求1所述的自驱动光电探测器,其特征在于,所述二硒化钨层为通过气相沉积法或者机械剥离获得二硒化钨纳米片,所述二硒化钨纳米片厚度为0.7-100纳米。
4.根据权利要求1所述的自驱动光电探测器,其特征在于,所述源极为铝、钛、铬或银电极,厚度为20-100纳米。
5.根据权利要求1所述的自驱动光电探测器,其特征在于,所述的漏极包括钯、铂、金、石墨烯、有机电极,厚度为0.7-100纳米。
6.根据权利要求1所述的自驱动光电探测器,其特征在于,所述的绝缘衬底为二氧化硅衬底、蓝宝石衬底或氮化铝衬底。
7.一种制备如权利要求1-6任意一项所述的自驱动光电探测器的方法,其特征在于,该方法具体包括以下步骤:
步骤1. 将绝缘衬底依次放入丙酮、乙醇、去离子水三种溶液中超声清洗15分钟,取出,吹干;
步骤2. 利用热蒸镀或电子束蒸镀在绝缘衬底上蒸镀源极;
步骤3. 采用原子层沉积技术在源极上沉积隧穿层;
步骤4. 将二硒化钨转移至源极上;
步骤5. 在二硒化钨上制备漏极,即得到所述二硒化钨和金属垂直肖特基结自驱动光电探测器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810011780.8A CN108281493B (zh) | 2018-01-05 | 2018-01-05 | 二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810011780.8A CN108281493B (zh) | 2018-01-05 | 2018-01-05 | 二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108281493A CN108281493A (zh) | 2018-07-13 |
CN108281493B true CN108281493B (zh) | 2019-11-12 |
Family
ID=62803339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810011780.8A Active CN108281493B (zh) | 2018-01-05 | 2018-01-05 | 二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108281493B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111245416B (zh) * | 2020-01-17 | 2022-04-05 | 北京科技大学 | 一种二维水平同质结、自驱动逻辑光电开关及其制备方法 |
CN111509076B (zh) * | 2020-04-30 | 2021-07-20 | 华南理工大学 | 一种具有低暗电流的自驱动型光电探测器及其制备方法 |
TWI783805B (zh) * | 2021-12-01 | 2022-11-11 | 天光材料科技股份有限公司 | 光電半導體之結構 |
CN114927587B (zh) * | 2022-03-15 | 2024-03-22 | 中国民用航空飞行学院 | 一种基于三元材料平面隧穿效应的光电探测器及制备方法 |
CN115000230B (zh) * | 2022-06-13 | 2024-03-22 | 太原理工大学 | 一种垂直结构TiN增强型4H-SiC基宽谱光电探测器及制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013063399A1 (en) * | 2011-10-28 | 2013-05-02 | Georgetown University | Method and system for generating a photo-response from mos2 schottky junctions |
CN104393093A (zh) * | 2014-11-13 | 2015-03-04 | 北京工业大学 | 应用石墨烯的高探测率氮化镓基肖特基型紫外探测器 |
CN107221575A (zh) * | 2017-07-12 | 2017-09-29 | 中国科学院上海技术物理研究所 | 基于二维材料垂直肖特基结近红外探测器及制备方法 |
-
2018
- 2018-01-05 CN CN201810011780.8A patent/CN108281493B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013063399A1 (en) * | 2011-10-28 | 2013-05-02 | Georgetown University | Method and system for generating a photo-response from mos2 schottky junctions |
CN104393093A (zh) * | 2014-11-13 | 2015-03-04 | 北京工业大学 | 应用石墨烯的高探测率氮化镓基肖特基型紫外探测器 |
CN107221575A (zh) * | 2017-07-12 | 2017-09-29 | 中国科学院上海技术物理研究所 | 基于二维材料垂直肖特基结近红外探测器及制备方法 |
Non-Patent Citations (4)
Title |
---|
"High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors";Nihar R. Pradhan;《ACS Appl. Mater. Interfaces》;20150519;全文 * |
"Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials";Seon Namgung;《ACS Nano》;20161102;第10500页第1段至10505页最后一段 * |
"Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene";Chao Xie;《Adv. Funct. Mater.》;20161108;全文 * |
"Visible to near-infrared photodetectors based on MoS2 vertical Schottky junctions";Fan Gong;《Nanotechnology》;20171109;全文 * |
Also Published As
Publication number | Publication date |
---|---|
CN108281493A (zh) | 2018-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108281493B (zh) | 二硒化钨和金属垂直型肖特基结自驱动光电探测器及制备 | |
Ahmadi et al. | A review on organic–inorganic halide perovskite photodetectors: device engineering and fundamental physics | |
Zhang et al. | Sensitive deep ultraviolet photodetector and image sensor composed of inorganic lead-free Cs3Cu2I5 perovskite with wide bandgap | |
Liao et al. | A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect | |
CN108198897B (zh) | 一种石墨烯场效应晶体管量子点光电探测器及其制备方法 | |
CN105762281A (zh) | 一种铁电局域场增强型二维半导体光电探测器及制备方法 | |
CN109950403B (zh) | 一种铁电场调控的二维材料pn结光电探测器及制备方法 | |
US20170110616A1 (en) | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS | |
KR101558801B1 (ko) | 그래핀-실리콘 양자점 하이브리드 구조를 이용한 포토 다이오드 및 그 제조방법 | |
CN107221575B (zh) | 基于二维材料垂直肖特基结近红外探测器及制备方法 | |
CN104766902A (zh) | 基于石墨烯碳纳米管复合吸收层的红外光探测晶体管 | |
Huang et al. | Realization of a self-powered InGaZnO MSM UV photodetector using localized surface fluorine plasma treatment | |
Pradel et al. | Optoelectronic properties of solution grown ZnO np or pn core–shell nanowire arrays | |
Ferhati et al. | Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer | |
CN205723636U (zh) | 一种铁电局域场增强型二维半导体光电探测器 | |
Cai et al. | High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction | |
US11069868B2 (en) | Semiconductor structure, semiconductor device, photodetector and spectrometer | |
Kim et al. | High-performing ITO/CuO/n-Si photodetector with ultrafast photoresponse | |
Kim et al. | Cu4O3-based all metal oxides for transparent photodetectors | |
Zhang et al. | Ultra-broadband, self-powered and high performance vertical WSe2/AlOx/Ge heterojunction photodetector with MXene electrode | |
Sun et al. | Research on piezo-phototronic effect in ZnO/AZO heterojunction flexible ultraviolet photodetectors | |
Han et al. | Type-III organic/two-dimensional multi-layered phototransistors with promoted operation speed at the communication band | |
Ghosh et al. | High performance broad-band ultraviolet-B to visible photodetection based on planar Al-Zn2SnO4-Al structure | |
CN107706260B (zh) | 一种二硒化钨薄片/氧化铟纳米线复合结构近红外光电探测器及其制备方法 | |
CN106098804B (zh) | 石墨烯/氧化锌单晶基片肖特基结紫外光电探测器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |