CN108269931A - A kind of organic electroluminescence device and preparation method thereof - Google Patents
A kind of organic electroluminescence device and preparation method thereof Download PDFInfo
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- CN108269931A CN108269931A CN201611257711.2A CN201611257711A CN108269931A CN 108269931 A CN108269931 A CN 108269931A CN 201611257711 A CN201611257711 A CN 201611257711A CN 108269931 A CN108269931 A CN 108269931A
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- organic electroluminescence
- electroluminescence device
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000126 substance Substances 0.000 claims abstract description 40
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 43
- 238000002347 injection Methods 0.000 claims description 33
- 239000007924 injection Substances 0.000 claims description 33
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 8
- -1 anode Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 230000021615 conjugation Effects 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 125000000468 ketone group Chemical group 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000004185 ester group Chemical group 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 125000004076 pyridyl group Chemical group 0.000 claims description 2
- 125000005493 quinolyl group Chemical group 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052713 technetium Inorganic materials 0.000 claims description 2
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 238000010791 quenching Methods 0.000 abstract description 10
- 230000000171 quenching effect Effects 0.000 abstract description 10
- 238000004020 luminiscence type Methods 0.000 abstract description 9
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 17
- 239000003574 free electron Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- 229910021645 metal ion Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 230000000536 complexating effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- PPTSBERGOGHCHC-UHFFFAOYSA-N boron lithium Chemical compound [Li].[B] PPTSBERGOGHCHC-UHFFFAOYSA-N 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 125000006617 triphenylamine group Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
In order to solve the problems, such as that the centre of luminescence of organic electroluminescence device of the prior art quenching probability is higher, the embodiment of the present application provides a kind of organic electroluminescence device and preparation method thereof.Organic electroluminescence device includes electron injecting layer, wherein, the electron injecting layer includes at least one complex formed by least one inert metal simple substance and at least one electron transport material, wherein, the at least one electron transport material has coordination ability, and include N^O and/or N^N heterocycles.
Description
Technical field
This application involves organic electroluminescence device field more particularly to a kind of organic electroluminescence device and its preparation sides
Method.
Background technology
With the development of science and technology, the application range of organic electroluminescence device is more and more wider.
Wherein, electronics, hole in conjunction with rate (γ) be influence one of organic electroluminescence device luminous efficiency it is important
Factor.Therefore, the more balance for injecting electrons and holes allows γ values to be the best means for improving quantum efficiency close to 1.0.
But in present organic electroluminescence device, hole luminescent layer quantity than electronics two quantity more than the quantity of luminescent layer
Grade, which results in organic electroluminescence device luminescent layer have compared with low hole, electronics in conjunction with rate, therefore reduce number of cavities
Or it is to improve the solution of device light emitting efficiency to improve electron injection ability.Organic electroluminescence device is generally by substrate, sun
Pole, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode are formed.
Wherein, the effect of electron injecting layer is the injection for promoting free electron from cathode to electron transfer layer, reduces driving
Voltage saves resource.The material of the electron injecting layer of organic electroluminescence device of the prior art is generally alkali metal chemical combination
Object, such as lithia, oxidation lithium boron, potassium carbonate, cesium carbonate.Organic electroluminescence device can made of alkali metal compound
It effectively reduces driving voltage and improves device current efficiency.The material of the another kind of electron injecting layer often used is alkali metal fluosilicate
Compound, such as lithium fluoride LiF, especially LiF/Al structures have the injection barrier that the characteristic of Ohmic contact reduces electronics, carry
The high efficiency of device and the driving voltage for reducing device.
But alkali metal is more active, is unfavorable for preserving for a long time, cotton-shaped dust is easily generated during vacuum evaporation,
This has all seriously affected production efficiency and product yield.And since above-mentioned metal ion is easily migrated to luminescent layer, so as to hold
Easily lead to the centre of luminescence quenching of organic electroluminescence device.
Invention content
The embodiment of the present application provides a kind of organic electroluminescence device and preparation method thereof and device, to solve existing skill
The problem of probability of the centre of luminescence quenching of organic electroluminescence device in art is higher.
The embodiment of the present application uses following technical proposals：
A kind of organic electroluminescence device, including electron injecting layer, the electron injecting layer is included by least one inertia
At least one complex that metal simple-substance is formed at least one electron transport material, wherein, at least one electronics
Transmission material has coordination ability, and includes N^O and/or N^N heterocycles.
A kind of preparation method of organic electroluminescence device, the organic electroluminescence device include substrate, anode, hole
Implanted layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode, the method includes：
On the substrate successively vapor deposition on be stacked on one another the anode, hole transmission layer, luminescent layer, electron-transport
Layer, electron injecting layer and cathode,
Wherein, when the electron injecting layer is deposited, using at least one inert metal list of method vapor deposition for mixing vapor deposition
Matter and at least one electron transport material so that at least one inert metal simple substance exists at least one electron transport material
During vapor deposition, at least one complex is formed, wherein, at least one electron transport material has coordination ability,
And include N^O and/or N^N heterocycles.
Above-mentioned at least one technical solution that the embodiment of the present application uses can reach following advantageous effect：
Electron injecting layer in organic electroluminescence device provided by the embodiments of the present application is included by least one inertia gold
Belong to the complex that simple substance is formed at least one electron transport material.Wherein, at least one electron transport material tool
There is coordination ability, and include N^O and/or N^N heterocycles.
The work function of above-mentioned complex that above-mentioned electron injecting layer includes is relatively low, the lumo energy with electron transfer layer
Match, the injection barrier of free electron can be reduced, reduce the obstruction that free electron is injected from cathode to electron transfer layer, because
And injection of the free electron from cathode to electron transfer layer can be promoted, reduce driving voltage.In addition, above-mentioned electron injecting layer packet
The above-mentioned complex property included is relatively stablized, and the complexing between inert metal ion and electron transport material is larger, that
Metal ion just do not allow it is easy to migrate to luminescent layer, so as to solve in the shining of organic electroluminescence device of the prior art
The problem of probability of heart quenching is higher.
Description of the drawings
Attached drawing described herein is used for providing further understanding of the present application, forms the part of the application, this Shen
Illustrative embodiments and their description please do not form the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 is a kind of concrete structure schematic diagram of organic electroluminescence device provided by the embodiments of the present application；
Fig. 2 is voltage provided by the embodiments of the present application and current density relational graph；
Fig. 3 is brightness provided by the embodiments of the present application and current efficiency relational graph.
Specific embodiment
Purpose, technical scheme and advantage to make the application are clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Go out all other embodiments obtained under the premise of creative work, shall fall in the protection scope of this application.
Below in conjunction with attached drawing, the technical solution that each embodiment of the application provides is described in detail.
In order to solve the problems, such as that the probability of the centre of luminescence of organic electroluminescence device of the prior art quenching is higher, this
Apply for that embodiment provides a kind of organic electroluminescence device.The organic electroluminescence device can be that top emitting organic electronic shines
Device or bottom emitting organic electroluminescence device, the embodiment of the present application is to this without any restriction.
A kind of concrete structure schematic diagram of organic electroluminescence device 100 provided by the embodiments of the present application is as shown in Figure 1.It should
Organic electroluminescence device 100 can include substrate 101, anode 102, hole injection layer 103, hole transmission layer 104, luminescent layer
105th, electron transfer layer 106, electron injecting layer 107, cathode 108, the conducting wire 109 being connected with anode 102 and with 108 phase of cathode
Conducting wire 110 even.
Above-mentioned electron injecting layer 107 can be included by least one inert metal simple substance and at least one electron transport material
At least one complex of formation, wherein, at least one electron transport material has coordination ability, and include N^O
And/or N^N heterocycles.
It is above-mentioned at least one inert metal simple substance can include but is not limited to titanium Ti, vanadium V, chromium Cr, manganese Mn, iron Fe, cobalt Co,
Nickel, copper Cu, zinc Zn, zirconium Zr, niobium Nb, molybdenum Mo, technetium Tc, ruthenium Ru, rhodium Rh, lead Pd, silver Ag, cadmium Cd, tantalum Ta, tungsten W, rhenium Re, osmium
At least one of Os, iridium Ir, gold Au, platinum Pt or mercury Hg.Wherein, above-mentioned inert metal simple substance is relatively stablized, and work(in air
Function is above 4.0V.It should be noted that a kind of in above-mentioned at least one inert metal simple substance can be with the material of cathode 108
Matter is identical, can also be different, and the embodiment of the present application is to this without any restriction.
Preferably, at least one inert metal simple substance can include but is not limited to cobalt Co, nickel, copper Cu, ruthenium Ru, silver Ag,
Iridium Ir, gold at least one of Au or platinum Pt.Wherein, the coordination ability of those inert metal simple substance is stronger, it is easier to electronics
Transmission material forms complex, and then finally formed complex can be caused more to stablize.
The corresponding at least one electron-transport material of main part of above-mentioned at least one electron transport material, which can be selected from, to be had such as
Structural formula (1) is at least one of to the material of (12)：
Wherein, R1、R2、R3、R4、R5、R6、R7、R8Selected from hydrogen-based, alkyl (- CnH2n+1), conjugation aromatic group, conjugation it is miscellaneous
Ring, methoxyl group (- OCH3), amino and alkyl-substituted amino (- NRxH2-x), cyano (- CN) and cyano substituted alkyl chain (- CnH2n-
CN), halogen family base (- X) and halogenated alkyl chain, aldehyde radical and ketone group (- CHO ,-COR2) and carboxaldehyde radicals substituted alkyl chain (- CnH2n-CHO)、
Ester group (- COOR) and ester group substituted alkyl chain (- CnH2n- COOR) or levulinic ketone group (- COCH2COR) and levulinic ketone group is for alkane
Base chain (- CnH2n-COCH2At least one of COR), the aromatic group that is conjugated is described for phenyl (- Ph), naphthalene or anthryl
It is pyridyl group (- Py) or quinolyl to be conjugated heterocycle.
Above-mentioned at least one electron transport material may be selected from one in the material such as the structural formula of (2-1) to (9-1)
Kind：
The volume ratio of above-mentioned inert metal simple substance and electron transport material can be 1:99~99:1 or inert metal simple substance
Mass ratio with electron transport material can be 1:99~99:1.
Preferably, the mass ratio of inert metal simple substance and electron transport material can be 5:95~30:70.
For example, if inert metal simple substance is silver, electron transport material is the electron transport material for having structural formula (5-1),
That is 4,7- diphenyl -1,10- ferrosins, then the structure for the complex that silver is formed with 4,7- diphenyl -1,10- ferrosin
Formula can be：
Substrate 101, anode 102, hole injection layer 103, hole transmission layer in above-mentioned organic electroluminescence device 100
104th, the material of luminescent layer 105, electron transfer layer 106, cathode 108, conducting wire 109 and conducting wire 110 can be the prior art
It is usually applied to substrate in organic electroluminescence device, anode, hole injection layer, hole transmission layer, luminescent layer, electron-transport
Layer, electron injecting layer, cathode, the conducting wire being connected with anode and the conducting wire being connected with cathode material, no longer go to live in the household of one's in-laws on getting married herein
It states.
In the embodiment of the present application, the work function of above-mentioned complex that electron injecting layer 107 includes is relatively low, and above-mentioned
The lumo energy of electron transfer layer 106 matches, and can reduce the injection barrier of free electron, reduces free electron by cathode
108 obstructions injected to electron transfer layer 106, thus note of the free electron from cathode 108 to electron transfer layer 106 can be promoted
Enter, reduce driving voltage.In addition, above-mentioned at least one inert metal itself is in respectively with above-mentioned at least one electron transport material
Existing electroneutral, using the method for mixing vapor deposition be deposited on electron transfer layer 106 at least one inert metal and it is above-mentioned extremely
During a few electron transport material, above-mentioned at least one inert metal can lose electronics, finally be passed with above-mentioned at least one electronics
Defeated material, which is formed, is presented electropositive complex.So, just there are free electrons in electron injecting layer 107.This will increase
Add the quantity of the free electron injected to electron transfer layer 106, so as to improve electron injection efficiency.Therefore, above-mentioned coordination
Compound can be as the material for forming electron injecting layer, and can play the role of electron injecting layer should play.Wherein, it is above-mentioned
The above-mentioned complex property that electron injecting layer includes relatively is stablized, the complexing between inert metal ion and electron transport material
Act on larger, then metal ion just do not allow it is easy to migrate to luminescent layer, so as to reduce organic electroluminescence hair of the prior art
The probability of the centre of luminescence quenching of optical device.
It should be noted that when organic electroluminescence device provided by the embodiments of the present application is top radiation organic EL
During device, the top radiation organic EL part is in addition to that can reduce shining for organic electroluminescence device of the prior art
Except the probability of center quenching, it is saturating in use that top radiation organic EL part of the prior art can also be solved
The problem of light rate continuously decreases.Specifically, the electron injecting layer of some top radiation organic EL parts of the prior art
Material for active metal simple substance, but active metal easily aoxidizes, and forms oxide, wherein, the light transmittance of oxide is relatively low,
The usage time of those top radiation organic EL parts is longer, and the degree of active metal oxidation is higher, the oxide of formation
Just more, this will cause those top radiation organic EL parts, and light transmittance is lower and lower in use.And this Shen
Please embodiment provide top radiation organic EL part electron injecting layer material can be by least one inert metal
At least one complex that simple substance is formed at least one electron transport material, the electron injecting layer do not include active gold
Belong to, thus will not aoxidize to form oxide in use, so as to which top radiation organic EL part will not be caused to make
It is continuously decreased with light transmittance in the process, therefore, top radiation organic EL part of the prior art can be solved and used
The problem of light transmittance continuously decreases in the process.
Embodiment 1
Embodiment 1 can be by taking top radiation organic EL part as an example, and the top radiation organic EL part can
Using using silver-colored Ag as reflective metals layer material, with tin indium oxide (Indium tin oxide, ITO) for anode material, with 4,4,4-
Three (carbazole -9- bases) triphenylamines (TCTA) are hole injection layer material, are joined with N, N'- diphenyl-N, N'- (1- naphthalenes) -1,1'-
Benzene -4,4'- diamines (NPB) is hole transport layer material, with (9- carbazoles) biphenyl of 4,4'- bis- (CBP) for emitting layer material,
In, Ir (ppy)3The mass percent adulterated in luminescent layer is 15%, is with 4,7- diphenyl -1,10- phenanthroline (Bphen)
Electron transport layer materials, the ligand compound that the substance using the chemical structural formula in the embodiment of the present application as formula (4-1) is formed with Ag
Object is the material of electron injecting layer, wherein, the mass percent adulterated in the substance that Ag is formula (4-1) in chemical structural formula is
5%, using Ag as semitransparent cathode material.In addition, the thickness of the reflective metal layer of above-mentioned top radiation organic EL part is
10 nanometers, the thickness of transparent anode is 15nm, and the thickness of hole injection layer is 10 nanometers, and the thickness of hole transmission layer is received for 10
Rice, the thickness of luminescent layer is 30 nanometers, and the thickness of electron transfer layer is 20 nanometers, and the thickness of electron injecting layer is 10 nanometers, partly
The thickness of transparent cathode is 10 nanometers.1 top radiation organic EL part structure of embodiment is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (4-1)：5%Ag (10nm)/Ag (10nm)
Embodiment 2
The top radiation organic EL part structure that embodiment 2 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (4-1)：10%Ag (10nm)/Ag (10nm)
Embodiment 3
The top radiation organic EL part structure that embodiment 3 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (4-1)：25%Ag (10nm)/Ag (10nm)
Comparative example 1
The top radiation organic EL part structure that comparative example 1 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(30nm)/Ag(10nm)
Comparative example 2
The top radiation organic EL part structure that comparative example 2 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/Mg(2nm)：Ag(8nm)/Ag(10nm)
Wherein, it should be noted that the top that above-described embodiment 1, embodiment 2, embodiment 3, comparative example 1, comparative example 2 provide
The thickness all same of radiation organic EL part.
Table one
As shown in Table 1, have between cathode and electron transfer layer very big without using electron injecting layer in comparative example 1
Injection barrier, electronics are difficult to cause the driving voltage of comparative example 1 very high in injection device；Structural formula is in Examples 1 to 3
The electron transport material of formula (4-1) and the inert metal Ag of various concentration mix vapor deposition, wherein, when the mass fraction of Ag is 10%
When, top radiation organic EL part performance is best.Wherein, driving voltage is lower, electron injection efficiency is higher, illustrates top hair
It is better to penetrate organic electroluminescence device performance.Either driving voltage or efficiency, the performance of embodiment 2 are better than comparative example 2,
This illustrates that the work function for the electron transport material and the inert metal Ag complexes formed that structural formula is formula (4-1) is relatively low,
It can reduce the injection barrier of free electron, reduce the potential barrier that free electron is injected from cathode to electron transfer layer, thus can be with
Promote injection of the free electron from cathode to electron transfer layer, reduce driving voltage.In addition, by voltage and current as shown in Figure 2
Density relationship figure and brightness as shown in Figure 3 and current efficiency relational graph are it is found that the top emitting Organic Electricity that embodiment 2 provides
The performance of electroluminescence device is best.Wherein, Ag is used to represent that the top emitting that the material of electron injecting layer is Ag has in Fig. 2 and Fig. 3
Mg in organic electroluminescence devices, Fig. 2 and Fig. 3：Ag is used to represent that the material of electron injecting layer to be organic for the top emitting of magnesium silver alloy
5% for representing that the material of electron injecting layer is the Ag and quality that mass percent is 5% in electroluminescent device, Fig. 2 and Fig. 3
The top radiation organic EL device of the corresponding complex for being electronically entered material formation of formula (4-1) that percentage is 95%
10% for representing that the material of electron injecting layer is that the Ag that mass percent is 10% is with mass percent in part, Fig. 2 and Fig. 3
90% formula (4-1) is corresponding be electronically entered material formation complex top radiation organic EL part, Fig. 2 and
10% is formula that Ag that mass percent is 25% is 75% with mass percent for the material that represents electron injecting layer in Fig. 3
The top radiation organic EL part of (4-1) corresponding complex for being electronically entered material formation.
Embodiment 4
The top radiation organic EL part structure that embodiment 4 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (2-3)：10%Ag (10nm)/Ag (10nm)
Embodiment 5
The top radiation organic EL part structure that embodiment 5 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (3-1)：10%Ir (10nm)/Ag (10nm)
Embodiment 6
The top radiation organic EL part structure that embodiment 6 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (4-3)：10%Co (10nm)/Ag (10nm)
Embodiment 7
The top radiation organic EL part structure that embodiment 7 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (4-10)：10%Pt (10nm)/Ag (10nm)
Embodiment 8
The top radiation organic EL part structure that embodiment 8 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (5-6)：10%Ru (10nm)/Ag (10nm)
Embodiment 9
The top radiation organic EL part structure that embodiment 9 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (5-10)：10%Ni (10nm)/Ag (10nm)
Embodiment 10
The top radiation organic EL part structure that embodiment 10 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (5-17)：10%Au (10nm)/Ag (10nm)
Embodiment 11
The top radiation organic EL part structure that embodiment 11 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (6-2)：10%Cu (10nm)/Ag (10nm)
Embodiment 12
The top radiation organic EL part structure that embodiment 12 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (7-1)：10%Ag (10nm)/Ag (10nm)
Embodiment 13
The top radiation organic EL part structure that embodiment 13 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (8-3)：10%Ni (10nm)/Ag (10nm)
Embodiment 14
The top radiation organic EL part structure that embodiment 14 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (8-4)：10%Pt (10nm)/Ag (10nm)
Embodiment 15
The top radiation organic EL part structure that embodiment 15 provides is as follows：
Ag(10nm)/ITO(15nm)/HATCN(10nm)/NPB(30nm)/CBP:15wt%Ir (ppy)3/Bphen
(20nm)/formula (9-1)：10%Cu (10nm)/Ag (10nm)
Table two
As shown in Table 2,4~embodiment of embodiment 15 has selected the electronics of the different structure formula in the embodiment of the present application to pass
The complex that defeated material and different inert metals are formed is as electron injecting layer, top radiation organic EL part
Can be better than not using 1 performance of device comparative example of electron injecting layer, illustrating that different complexes all has reduces cathode
The injection barrier between electron transport material improves the effect of electron injection ability.
In order to solve the problems, such as that the centre of luminescence of organic electroluminescence device of the prior art quenching probability is higher, this Shen
Please embodiment a kind of preparation method of organic electroluminescence device is also provided.It should be noted that the preparation method can be used for making
Standby top radiation organic EL part, it can also be used to prepare bottom emitting organic electroluminescence device, the embodiment of the present application is to this
Without any restriction.
Wherein, above-mentioned organic electroluminescence device can include substrate, anode, hole injection layer, hole transmission layer, shine
Layer, electron transfer layer, electron injecting layer, cathode.The preparation method of the organic electroluminescence device is as described below：
Anode, hole injection layer, hole transmission layer, luminescent layer, the electronics being stacked on one another on being deposited successively on substrate pass
Defeated layer, electron injecting layer and cathode.
Above-mentioned anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and cathode material can be equal
For the anode being applied in organic electroluminescence device common in the art, hole injection layer, hole transmission layer, shine
The material of layer, electron transfer layer and cathode, and prepare the anode in organic electroluminescence device, hole injection layer, hole
Transport layer, luminescent layer, electron transfer layer and cathode method may be the prior art, therefore, details are not described herein again prepares
Above-mentioned anode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and cathode process, be only described in detail how
Upper electron injecting layer is deposited on the electron transport layer：
Using at least one inert metal simple substance of method vapor deposition and at least one electron transport material for mixing vapor deposition so that
At least one inert metal simple substance during vapor deposition, forms at least one coordinationization at least one electron transport material
Close object.
Above-mentioned at least one electron transport material can have coordination ability, and include N^O and/or N^N heterocycles.
Wherein, above-mentioned at least one inert metal simple substance and at least one electron transport material, can be to be referred in embodiment 1
At least one inert metal simple substance and at least one electron transport material, above-mentioned at least one inert metal simple substance and at least one
The mass ratio of kind electron transport material can be found in the mass ratio referred in embodiment 1, no longer be repeated herein.It is in addition, above-mentioned
The thickness of electron injecting layer can be 5 nanometers~30 nanometers.
It should be strongly noted that after vapor deposition finishes each film layer on substrate, can connect on anode, cathode respectively
Conducting wire is connected, and packaged.Wherein, the conducting wire connected on anode for being connect with positive pole, use by the conducting wire connected on cathode
It is connect in power cathode.
In one embodiment, if preparing top radiation organic EL part using above-mentioned preparation method, in order to
So that the top radiation organic EL part prepared has preferable performance, that can also be deposited successively on substrate
Before this anode being laminated, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and cathode,
Metallic reflector is deposited above basic.It should be noted that above-mentioned anode can be transparent anode, above-mentioned cathode can be semi-transparent
Bright cathode.
Wherein, the material of above-mentioned metallic reflector, transparent anode and semitransparent cathode can be normal in the prior art
The material of the metallic reflector being applied in top radiation organic EL part, transparent anode and semitransparent cathode seen,
The method for preparing the metallic reflector in top radiation organic EL part, transparent anode and semitransparent cathode may be
The prior art is no longer repeated herein.
In addition, vapor deposition finishes metallic reflector, transparent anode, hole injection layer, hole transmission layer, shines on substrate
It, can also be optical coupled on vapor deposition above semitransparent cathode after layer, electron transfer layer, electron injecting layer and semitransparent cathode
Layer.The material of above-mentioned optically coupled layers can be common in the art is applied in top radiation organic EL part
The material of optically coupled layers, is no longer repeated herein.Wherein, semitransparent cathode electrode has due to high reflectance in top emitting
Microcavity effect is introduced in organic electroluminescence devices, resulting in chromaticity coordinates can change with time, and affect top emitting
The functionization of organic electroluminescence.In order to improve the optical coupled output characteristics of emission structure at top, above semitransparent cathode
Optically coupled layers are deposited, adjusts microcavity effect by adjusting the thickness of optically coupled layers, effectively improves semitransparent cathode
Transmissivity, improve the positive luminous efficiency of top radiation organic EL part.
Utilize the organic electroluminescent prepared by organic electroluminescence device preparation method provided by the embodiments of the present application
The complex property that the electron injecting layer of device includes relatively is stablized, the network between inert metal ion and electron transport material
Cooperation with larger, metal ion just do not allow it is easy to migrate to luminescent layer, so as to which organic electroluminescent of the prior art can be solved
The problem of probability of the centre of luminescence quenching of device is higher.
Utilize the organic electroluminescent prepared by organic electroluminescence device preparation method provided by the embodiments of the present application
Device, in addition to the probability that the centre of luminescence that can solve the problems, such as organic electroluminescence device of the prior art quenches is higher
Outside, it can also solve that organic electroluminescence device luminance of the prior art is relatively low, organic electroluminescence device production efficiency
Relatively low, the problem of yields is relatively low.Specifically, the material of the electron injecting layer of some organic electroluminescence devices of the prior art
Expect for active metal simple substance, alkali metal oxide or alkali metal fluoride, due to active metal, face is steamed on the electron transport layer
When plating those electron injecting layers, active metal is unstable, easily generates cotton-shaped dust, those cotton-shaped dust will be attached to electronics
In transport layer, lead to the electron injecting layer out-of-flatness prepared, this will cause the organic electroluminescence device luminance compared with
It is low, and can lead to that organic electroluminescence device production efficiency is relatively low, yields is relatively low.And it uses provided by the embodiments of the present application
The preparation method of organic electroluminescence device when preparing electron injecting layer, is deposited at least one using the method for mixing vapor deposition
Inert metal simple substance and at least one electron transport material so that at least one inert metal simple substance and at least one electronics
Transmission material forms at least one complex during vapor deposition.At least one complex is just electron injection
The material of layer.Since at least one inert metal simple substance and at least one electron transport material are not active metals, property is stablized,
Therefore cotton-shaped dust will not be generated in vapor deposition, there will not be cotton-shaped dust and be attached on electron transfer layer, just will not lead to electricity
Sub- implanted layer out-of-flatness, so as to just solve the problems, such as that organic electroluminescence device luminance of the prior art is relatively low, simultaneously
Just also solve the problems, such as that organic electroluminescence device production efficiency is relatively low, yields is relatively low.
Electron injecting layer in organic electroluminescence device provided by the embodiments of the present application is included by least one inertia gold
Belong to the complex that simple substance is formed at least one electron transport material.Wherein, at least one electron transport material tool
There is coordination ability, and include N^O and/or N^N heterocycles.The work function of above-mentioned complex that above-mentioned electron injecting layer includes compared with
It is low, match with the lumo energy of electron transfer layer, the injection barrier of free electron can be reduced, reduce free electron by cathode
The obstruction injected to electron transfer layer, thus injection of the free electron from cathode to electron transfer layer can be promoted, reduce driving
Voltage.In addition, the above-mentioned complex property that above-mentioned electron injecting layer includes relatively is stablized, inert metal simple substance and electron-transport
Complexing between material is larger, then metal ion just do not allow it is easy to migrate to luminescent layer, so as to solve in the prior art
Organic electroluminescence device the centre of luminescence quenching probability it is higher the problem of.
The foregoing is merely embodiments herein, are not limited to the application.For those skilled in the art
For, the application can have various modifications and variations.All any modifications made within spirit herein and principle are equal
Replace, improve etc., it should be included within the scope of claims hereof.
Claims (10)
1. a kind of organic electroluminescence device, including electron injecting layer, which is characterized in that the electron injecting layer is included by least
At least one complex that a kind of inert metal simple substance and at least one electron transport material are formed, wherein, it is described at least
A kind of electron transport material has coordination ability, and includes N^O and/or N^N heterocycles.
2. organic electroluminescence device as described in claim 1, which is characterized in that at least one inert metal simple substance packet
Include titanium Ti, vanadium V, chromium Cr, manganese Mn, iron Fe, cobalt Co, nickel, copper Cu, zinc Zn, zirconium Zr, niobium Nb, molybdenum Mo, technetium Tc, ruthenium Ru, rhodium Rh,
At least one of lead Pd, silver Ag, cadmium Cd, tantalum Ta, tungsten W, rhenium Re, osmium Os, iridium Ir, gold Au, platinum Pt or mercury Hg.
3. organic electroluminescence device as described in claim 1, which is characterized in that at least one inert metal simple substance packet
Include cobalt Co, nickel, copper Cu, ruthenium Ru, silver Ag, iridium Ir, gold at least one of Au or platinum Pt.
4. organic electroluminescence device as described in claim 1, which is characterized in that at least one electron transport material pair
The electron-transport material of main part answered, which is selected from, to be had such as at least one of formula (1) to the material of formula (12)：
Wherein, R1、R2、R3、R4、R5、R6、R7、R8Selected from hydrogen-based, alkyl (- CnH2n+1), conjugation aromatic group, conjugation heterocycle, methoxy
Base (- OCH3), amino and alkyl-substituted amino (- NRxH2-x), cyano (- CN) and cyano substituted alkyl chain (- CnH2n- CN), halogen
Race's base (- X) and halogenated alkyl chain, aldehyde radical and ketone group (- CHO ,-COR2) and carboxaldehyde radicals substituted alkyl chain (- CnH2n- CHO), ester group (-
) and ester group substituted alkyl chain (- C COORnH2n- COOR) or levulinic ketone group (- COCH2COR) and levulinic ketone group substituted alkyl chain (-
CnH2n-COCH2At least one of COR), the conjugation aromatic group is phenyl (- Ph), naphthalene or anthryl, and the conjugation is miscellaneous
Ring is pyridyl group (- Py) or quinolyl.
5. organic electroluminescence device as described in claim 1, which is characterized in that at least one electron transport material choosing
From at least one of such as (2-1) to the material of structural formula of (9-1)：
6. organic electroluminescence device as described in claim 1, which is characterized in that it is described at least one inert metal simple substance with
The volume ratio of at least one electron transport material is 1:99~99:1 or described at least one inert metal simple substance with it is described
The mass ratio of at least one electron transport material is 1:99~99:1.
7. organic electroluminescence device as described in claim 1, it is characterised in that it is described at least one inert metal simple substance with
The mass ratio of at least one electron transport material is 5:95~30:70.
8. organic electroluminescence device as described in claim 1, which is characterized in that the thickness of the electron injecting layer is received for 5
Rice~30 nanometers.
9. a kind of preparation method of organic electroluminescence device, the organic electroluminescence device includes substrate, anode, hole note
Enter layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, cathode, which is characterized in that the method includes：
The anode, hole injection layer, hole transmission layer, luminescent layer, the electricity being stacked on one another on vapor deposition successively on the substrate
Sub- transport layer, electron injecting layer and cathode,
Wherein, when the electron injecting layer is deposited, using mix at least one inert metal simple substance of method vapor deposition of vapor deposition with
At least one electron transport material so that at least one inert metal simple substance is being deposited at least one electron transport material
In the process, at least one complex is formed, wherein, at least one electron transport material has coordination ability, and wrap
Containing N^O and/or N^N heterocycles.
10. the preparation method of organic electroluminescence device as claimed in claim 9, which is characterized in that when the organic electroluminescence
Luminescent device be top radiation organic EL part when, on the substrate successively vapor deposition on be stacked on one another the anode,
Before hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and cathode, the method is also wrapped
It includes：
Upper metallic reflector is deposited on the substrate, wherein, the anode is transparent anode, and the cathode is translucent the moon
Pole；After the semitransparent cathode is deposited, optically coupled layers are deposited on the semitransparent cathode.
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| JP2015069714A (en) * | 2013-09-26 | 2015-04-13 | 国立大学法人九州大学 | Organic electroluminescent element |
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