CN108257910B - 浅沟槽隔离沟槽的制作方法 - Google Patents
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- 238000002955 isolation Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000011241 protective layer Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 106
- 239000000463 material Substances 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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Abstract
本发明公开一种浅沟槽隔离沟槽的制作方法,包含提供一基底,然后形成一第一掩模覆盖基底,第一掩模包含多个次掩模,一第一沟槽设置于相邻的各个次掩模之间,接着形成一保护层填满第一沟槽,然后形成一第二掩模覆盖第一掩模,第二掩模包含一开口,其中设置于开口正下方的次掩模定义为一接合浅沟槽图案,之后以第二掩模为掩模,移除接合浅沟槽图案,以将第一掩模转变为一第三掩模,接续移除第二掩模并且移除保护层,最后以第三掩模为掩模,移除部分的基底,形成多个浅沟槽隔离沟槽。
Description
技术领域
本发明涉及一种浅沟槽隔离沟槽的制作方式,特别是涉及利用保护层更精准定义浅沟槽隔离沟槽位置的制作方法。
背景技术
半导体制作工艺中,为了使芯片上各个电子元件之间拥有良好的隔离,以避免元件相互干扰而产生短路现象,一般采用区域氧化法(localized oxidation isolation,LOCOS)或是浅沟槽隔离(shallow trench isolation,STI)方法来进行隔离与保护。由于LOCOS制作工艺中产生的场氧化层(field oxide)所占据芯片的面积太大,且生成过程会伴随鸟嘴现象的发生,因此,具有小尺寸隔离线宽、明确的主动区划分、均匀的隔离区深度、尺寸可调整以及绝佳的隔离区平坦架构等优点的浅沟槽隔离法,已渐渐成为目前半导体元件隔离技术的主流。
浅沟槽隔离的制作方法一般而言是在芯片表面的各元件间制作一沟槽,并填入绝缘层以产生电性隔离的效果。随着半导体元件的体积缩小,浅沟槽隔离的布局方式也随之调整,然而在制作浅沟槽隔离的沟槽时,会发生蚀刻到主动区域预定位置的情形。
发明内容
有鉴于此,本发明的目的在于提供一种浅沟槽隔离沟槽的制作方法,以避免定义浅沟槽隔离沟槽时,蚀刻到主动区域预定位置。
根据本发明的一较佳实施例,一种浅沟槽隔离沟槽的制作方法包含提供一基底,然后形成一第一掩模覆盖基底,第一掩模包含多个次掩模,其中一第一沟槽设置于相邻的各个次掩模之间,接着形成一保护层填满第一沟槽,然后形成一第二掩模覆盖第一掩模,第二掩模包含一开口,其中设置于开口正下方的次掩模定义为一接合浅沟槽图案,之后以第二掩模为掩模,移除接合浅沟槽图案,以将第一掩模转变为一第三掩模,接续移除第二掩模并且移除保护层,最后以第三掩模为掩模,移除部分的基底,形成多个浅沟槽隔离沟槽。
根据本发明的一较佳实施例,第一掩模包含一第一材料,保护层包含一第二材料,第一材料和第二材料相较一预定蚀刻剂具有一高选择比。
根据本发明的一较佳实施例,第一材料包含氮化硅,保护层包含氧化硅,预定蚀刻剂包含含氟气体。
附图说明
图1至图9为根据本发明的较佳实施例所绘示的浅沟槽隔离沟槽的制作方法示意图;
图10为根据本发明的较佳实施例所绘示的浅沟槽隔离和主动区域的位置的上视图;
图11为图10中沿AA’切线所绘示的侧示图。
主要元件符号说明
10 基底 12 材料层
14 氧化硅层 16 非晶硅层
18 氮化硅层 20 第一图案化光致抗蚀剂层
22 开口 23 沟槽
24 有机介电层 26 含硅底部抗反射层
28 氧化硅层 30 有机介电层
32 第二图案化光致抗蚀剂层 34 第一掩模
36 第一沟槽 38 保护层
40 第二掩模 42 有机介电层
44 含硅底部抗反射层 46 光致抗蚀剂
48 开口 50 接合浅沟槽图案
52 开口 54 周边区浅沟槽图案
58 浅沟槽隔离沟槽 60 绝缘层
132 次掩模 134 次掩模
158 沟槽 160 浅沟槽隔离
234 第三掩模 258 沟槽
260 接合浅沟槽隔离 358 沟槽
360 浅沟槽隔离 362 主动区域
364 主动区域
具体实施方式
如图1所示,首先提供一基底10,基底10分为一主动阵列区A和周边电路区B,基底10上覆盖一材料层12,材料层12可以为单层材料或多层堆叠材料,材料层12可以包含氧化硅、非晶硅、氮化硅、氮氧化硅等材料,根据本发明的较佳实施例,材料层12为多层堆叠材料包含一氧化硅层14、一非晶硅层16和一氮化硅层18由下至上堆叠,氧化硅层14的厚度较佳约为1300埃,非晶硅层16的厚度较佳约为700埃,氮化硅层18的厚度较佳约为400埃。接着形成一第一图案化掩模层20,第一图案化掩模层20上包含多个开口22,第一图案化掩模层20由一有机介电层24和一含硅底部抗反射层26(silicon-containing hard mask bottomanti-reflection coating,SHB)所组成。如图2所示,形成一氧化硅层28顺应地覆盖第一图案化掩模层20,氧化硅层28的厚度较佳介于20至23纳米之间,例如为21.5纳米。然后形成一牺牲层,例如有机介电层30覆盖氧化硅层28并且填入各个开口22,有机介电层30较佳和有机介电层24相较于相同蚀刻剂有相同的蚀刻率,如图3 所示,先回蚀刻有机介电层30,接着更换蚀刻剂,蚀刻在有机介电层30上表面的氧化硅层28以及蚀刻位于开口22侧壁上的氧化硅层28,此时形成一第二图案化掩模层32,第二图案化掩模层32由有机介电层24和剩余的氧化硅层28所组成,第二图案化掩模层32包含多个次掩模132,此外沟槽23 设置于相邻的各个次掩模132之间,沟槽23的宽度对应氧化硅层28的厚度,较佳介于20至23纳米之间,例如为21.5纳米。
如图4所示,以第二图案化掩模层32为掩模,图案化材料层12,以将第二图案化掩模层32上的图案转印到材料层12上,转印的方式较佳为干蚀刻,此时图案化后的材料层12成为一第一掩模34,之后移除第二图案化掩模层32中的有机介电层24,保留氧化硅层28,在另一实施例中,氧化硅层 28也可以被移除,在后续制作工艺中,以保留氧化硅层28为例。此外,当材料层12为多层堆叠材料时,第一掩模34形成在材料层12内最上层的材料层中,根据本发明的较佳实施例,如前文所述,材料层12包含了氧化硅层14、非晶硅层16和氮化硅层18由下至上堆叠,第一掩模34仅形成在氮化硅层18中,而且氧化硅层14和非晶硅层16上都没有图案。第一掩模34 包含多个次掩模134,此外一第一沟槽36设置于相邻的各个次掩模134之间,第一沟槽36的宽度较佳介于20至23纳米之间,例如为21.5纳米。
如图5所示,形成一保护层38顺应地覆盖各个次掩模134,并且填满各个第一沟槽36,保护层38较佳为单层材料,组成保护层38的材料与组成第一掩模34的材料相较于一预定蚀刻剂具有一高选择比,详细来说,当使用同一蚀刻剂时,对于第一掩模34的蚀刻率和保护层38的蚀刻率有很大的不同,可以蚀刻第一掩模34的蚀刻剂不能蚀刻保护层38。保护层38的材料包含氧化硅、氮化硅、非晶硅或氮氧化硅等,根据本发明的较佳实施例,保护层38较佳为氧化硅,保护层38的厚度较佳大于第一沟槽36的宽度的二分之一,例如大于12纳米,以确保填满第一沟槽36,保护层38可以利用原子层沉积制作工艺、化学沉积制作工艺、物理沉积制作工艺或是其它适合的方式制作。
如图6所示,形成一第二掩模40覆盖第一掩模34,第二掩模可以为单层材料或多层堆叠材料,在本发明的实施例中,第二掩模40为多层堆叠材料,多层堆叠材料包含一有机介电层42、一含硅底部抗反射层44和一光致抗蚀剂46由下至上堆叠,第二掩模40包含至少一开口48,开口48可以只位于光致抗蚀剂46中,也就是说开口48未延伸至含硅底部抗反射层44和有机介电层42中,当然视不同情况,开口也48可以贯穿整个第二掩模40。此外,开口48的位置用来定义后续两条浅沟槽隔离的接合区域,开口48正下方的次掩模134定义为一接合浅沟槽图案50(以斜线标示),保护层38接触接合浅沟槽图案50的相对两侧壁。在一实施例中,开口48的侧壁可以和接合浅沟槽图案50的侧壁切齐,在另一实施例中,开口48的侧壁可以切齐位于接合浅沟槽图案50两侧的保护层38的任一位置,在图示中,以开口48 的侧壁切齐在接合浅沟槽图案50两侧的保护层38的中间位置为例。第二掩模可以另包含一开口52,开口52的位置用来定义在周边电路区B内的浅沟槽隔离的位置,开口50正下方的次掩模134定义为一周边区浅沟槽图案 54(以斜线标示)。
如图7所示,以第二掩模40为掩模,移除接合浅沟槽图案50和周边区浅沟槽图案54,由于接合浅沟槽图案50两侧有保护层38夹住接合浅沟槽图案50,并且接合浅沟槽图案50和保护层38相较于同一蚀刻剂有高选择比,此选择比较佳在10以上,所以在移除接合浅沟槽图案50时,保护层38可以作为停止层,使得与接合浅沟槽图案50相邻的其它次掩模134不会被蚀刻掉。详细来说,在移除接合浅沟槽图案50和周边区浅沟槽图案54所使用步骤包含先用含氟气体干蚀刻位于接合浅沟槽图案50的上表面和周边区浅沟槽图案54的上表面的保护层38,之后再用三氟甲烷(CHF3)干蚀刻接合浅沟槽图案50和周边区浅沟槽图案54,此时,在第一沟槽36内的保护层38 就作为使用三氟甲烷蚀刻的停止层。在移除第一掩模34上的接合浅沟槽图案50和周边区浅沟槽图案54后,第一掩模34转变为一第三掩模234,此时第三掩模234上尚有保护层38、氧化硅层28和第二掩模40覆盖,之后移除第二掩模40。如图8所示,完全移除保护层38,此外由于在本实施例中,保护层38为氧化硅,因此氧化硅层28也会同时被移除,此时第三掩模234 完全曝露出来,移除保护层38的方式可以使用湿蚀刻,配合氢氟酸稀释溶液将保护层38完全去除。
如图8和图9所示,以第三掩模234为掩模,移除部分的基底10,以形成多个浅沟槽隔离沟槽58于基底中,移除基底10的方式较佳为干蚀刻,在干蚀刻基底10时可以特意以一个倾斜的角度蚀刻基底10,如此之后形成的浅沟槽隔离沟槽58的开口宽度就会比第三掩模234上的开口宽度小,举例来说,若第一沟槽36的宽度为21.5纳米,沟槽158的开口宽度可缩减至18 纳米。在本实施中是利用垂直的角度蚀刻基底10,因此形成的浅沟槽隔离沟槽58的开口宽度和第三掩模234上的开口宽度相同。此外,如前文所述,在本实施例中以材料层12为多层堆叠材料为例,又第三掩模234形成在多层堆叠材料中的最上层材料层,所以在形成浅沟槽隔离沟槽58时,需以第三掩模234为掩模,先蚀刻材料层12内的中下层材料,之后再继续蚀刻基底10,详细来说会以形成在氮化硅层18中的第三掩模234为掩模,蚀刻非晶硅层16和氧化层14,之后再继续蚀刻基底10,并且在蚀刻基底10时,非晶硅层16和氧化层14会被消耗变薄,甚至完全耗损。在完成浅沟槽隔离沟槽58后,若还有残留的氧化硅层14,则可使用湿蚀刻,配合氢氟酸稀释溶液将氧化层14完全去除。在浅沟槽隔离沟槽58中,沟槽158之后在后续填入绝缘材料后会成为浅沟槽隔离,而沟槽258在后续填入绝缘材料后会成为接合浅沟槽隔离,用来连结两个相邻的浅沟槽隔离,沟槽358在后续填入绝缘材料后会成为周边电路区的浅沟槽隔离。沟槽158的开口宽度较佳介于 13至18纳米之间,沟槽258的开口宽度较佳介于46至54纳米之间,沟槽 358的开口宽度依据周边电路区所需的浅沟槽隔离宽度而异,较佳介于13 至54纳米之间,而沟槽158、沟槽258和沟槽358的深度较佳介于2500至3500纳米之间。
图11为浅沟槽隔离和主动区域的位置的上视图。图10为图11中沿AA’切线所绘示的侧示图。请同时参阅图10和图11,在沟槽158、沟槽258和沟槽358内填入绝缘层60以形成浅沟槽隔离160、接合浅沟槽隔离260和浅沟槽隔离360。此时浅沟槽隔离160和接合浅沟槽隔离260在基底10的主动阵列区A内定义出主动区域362,位于周边电路区B的浅沟槽隔离360在基底10的周边电路区B内定义出主动区域364。
本发明利用保护层确保移除接合浅沟槽图案时不会损害相邻的次掩模,以防止后续形成的浅沟槽隔离侵占到主动区域的位置。
以上所述仅为本发明的较佳实施例,凡依本发明权利要求所做的均等变化与修饰,皆应属本发明的涵盖范围。
Claims (7)
1.一种浅沟槽隔离沟槽的制作方法,包含:
提供一基底;
形成一第一掩模覆盖该基底,该第一掩模包含多个第一次掩模,其中一第一沟槽设置于相邻的各该第一次掩模之间;
形成一保护层填满该第一沟槽;
形成一第二掩模覆盖该第一掩模,该第二掩模包含一开口,其中设置于该开口正下方的该次掩模定义为一接合浅沟槽图案;
以该第二掩模为掩模,移除该接合浅沟槽图案,以将该第一掩模转变为一第三掩模;
移除该第二掩模;
移除该保护层;以及
以该第三掩模为掩模,移除部分的该基底,形成多个浅沟槽隔离沟槽,
其中所述形成一第一掩模覆盖该基底包括:
在所述基底上覆盖一材料层;
接着形成第一图案化掩模层,所述第一图案化掩模层中包含多个开口;
形成顺应地覆盖所述第一图案化掩模层的氧化硅层;
然后形成一牺牲层,该牺牲层覆盖所述氧化硅层且填入所述多个开口;
回蚀刻所述牺牲层;
然后更换蚀刻剂,蚀刻在所述牺牲层上表面的所述氧化硅层以及蚀刻位于所述开口的侧壁上的所述氧化硅层,以形成第二图案化掩模层,其中所述第二图案化掩模层包含多个第二次掩模,且第二沟槽设置于相邻的所述第二次掩模之间;
以所述第二图案化掩模层为掩模,图案化所述材料层,从而图案化后的所述材料层形成所述第一掩模。
2.如权利要求1所述的浅沟槽隔离沟槽的制作方法,其中该第一掩模包含第一材料,该保护层包含第二材料,该第一材料和该第二材料相较一预定蚀刻剂具有一高选择比。
3.如权利要求2所述的浅沟槽隔离沟槽的制作方法,其中该第一材料包含氮化硅,该保护层包含氧化硅,该预定蚀刻剂包含含氟气体。
4.如权利要求1所述的浅沟槽隔离沟槽的制作方法,另包含在以该第二掩模为掩模,移除该接合浅沟槽图案时,同时部分移除与该接合浅沟槽图案相邻的该保护层。
5.如权利要求1所述的浅沟槽隔离沟槽的制作方法,其中该开口和该接合浅沟槽图案切齐。
6.如权利要求1所述的浅沟槽隔离沟槽的制作方法,其中该开口的侧壁和与该接合浅沟槽图案相邻的该保护层切齐。
7.如权利要求1所述的浅沟槽隔离沟槽的制作方法,另包含:
在形成该多个浅沟槽隔离沟槽后,移除该第三掩模;以及
形成绝缘层填入该多个浅沟槽隔离沟槽。
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