CN108232397A - Miniaturized merit divides ware - Google Patents
Miniaturized merit divides ware Download PDFInfo
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- CN108232397A CN108232397A CN201810252626.XA CN201810252626A CN108232397A CN 108232397 A CN108232397 A CN 108232397A CN 201810252626 A CN201810252626 A CN 201810252626A CN 108232397 A CN108232397 A CN 108232397A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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Abstract
The invention relates to the field of electronic devices, in particular to a miniaturized power divider, which comprises two power dividing branches, a microstrip connecting unit, a dielectric plate and a plurality of metal conductive through holes, wherein any power dividing branch comprises a going circuit and a reverse circuit which are connected through the microstrip connecting unit, the going circuit comprises going microstrip-coplanar waveguide transmission units which are sequentially connected end to end, the reverse circuit comprises reverse microstrip-coplanar waveguide transmission units which are connected end to end, the going microstrip-coplanar waveguide transmission units comprise a microstrip transmission line section which is connected end to end through the metal conductive through holes and is positioned at the top of the dielectric plate and a coplanar waveguide transmission line section which is positioned at the bottom of the dielectric plate, the reverse microstrip-coplanar waveguide transmission units comprise a microstrip transmission line section which is connected end to end through the metal conductive through holes and is positioned at the top of the dielectric plate and a coplanar waveguide transmission line section which is positioned at the bottom of the dielectric plate, the invention adopts the double-layer microstrip-coplanar waveguide Z-shaped crossed reverse-folded transmission line, and realizes the miniaturization of the power divider.
Description
Technical field
The present invention relates to field of electronic devices more particularly to a kind of miniaturization power splitters.
Background technology
As requirement of the people to microwave system and device miniaturization is growing, the miniaturizations of radio-frequency devices increasingly by
To concern, and the degree of miniaturization for forming the transmission line of radio-frequency devices primary structure be the key that determine radio-frequency devices size because
Element.
Power splitter (is called power divider), is to meet special functional demands (such as large-sized array in radio frequency link
The feeding network of array antenna) for radiofrequency signal all the way to be divided into the RF device of two-way or the equal or different energy of multiple-channel output
Two-way or the synthesis of multiple signals energy can also be exported, also be combiner at this time by part all the way in turn.
Power splitter is one of device indispensable in modern various wireless communication systems.It is widely used in various microwaves to penetrate
In frequency circuit, such as power synthesis network, frequency multiplier, frequency mixer and array antenna etc..The power splitter of planar structure due to
Have many advantages, such as it is small, at low cost, be easily integrated, be most widely used.With the continuous hair of the Modern high throughput communication technology
Exhibition, also proposed power splitter higher requirement.Basic demand has：Small, filter with low insertion loss, output terminal amplitude is consistent with phase,
Interport isolation is good, bandwidth, and circuit form is simple etc..
Power splitter can be divided into two kinds of microstrip type and cavity type from structure, and microstrip type utilizes quarter-wave micro-strip
Line, cavity type utilize resonator.Microstrip power divider is widely used in radio frequency with the factors such as its low section, easy of integration, inexpensive
In circuit, however, due to being limited by 1/4 wavelength transmission line, microstrip power divider is not easy to realize Miniaturization Design.Based on snakelike
Or the circuit board number of plies having in the miniaturization power divider structure of multilayered structure transmission line structure is excessive, complicated, of high cost
High, some integrated levels are high, easily by environmental disturbances.For example the Chinese invention patent CN201410302256.8 authorized is public
A kind of microstrip power divider of miniaturization has been opened, has reduced power splitter by the way that microstrip transmission line is arranged in multilayer circuit board
Volume, but because using the structure of three layer circuit boards, it is with high costs, complicated, and all transmission lines are micro-strip transmission
Line, the radiation interference of generation is big, is also highly susceptible to the interference of ambient enviroment, greatly limits the performance of power splitter.
Technology now is difficult to have both at low cost, high-performance and the demand of miniaturization simultaneously.
Invention content
According to more than the deficiencies in the prior art, the present invention provides one kind is small, circuit form is simple, antijamming capability
By force, low-cost miniaturization power splitter.
Present invention solves the technical problem that the technical solution used for：Including two work(branch sections, an input transmission line,
Two micro-strip connection units, two output ports, metal floor, dielectric-slab and several metallic conduction vias, the metallic conduction
Via runs through the upper and lower surface of dielectric-slab, and the metal floor is set to the lower surface of dielectric-slab, two work(branch nodules
Structure is symmetrical set, and any work(branch section includes a whereabouts circuit and a negater circuit, the whereabouts circuit
Output terminal is electrically connected with the input terminal of negater circuit by micro-strip connection unit, the whereabouts circuit of two work(branch sections it is defeated
Enter end and be commonly connected to input transmission line, the output terminal of the negater circuit of two work(branch sections is connected respectively to different defeated
Exit port, the whereabouts circuit including several along dielectric-slab are arranged, are connected successively by metallic conduction via from beginning to end from front to back
Whereabouts micro-strip-co-planar waveguide the unit connect, the whereabouts micro-strip-co-planar waveguide unit include being set to dielectric-slab lower surface
" Z " font coplanar waveguide transmission line section A and " Z " the shaped offset of microstrip transmission line section A for being set to dielectric-slab upper surface, the coplanar wave
It leads transmission line section A with the head and the tail of microstrip transmission line segment A by metallic conduction via to be connected, the negater circuit includes several edges
Dielectric-slab arranges, from back to front from beginning to end by the sequentially connected inverted microstrip of metallic conduction via-co-planar waveguide unit, described anti-
Include being set to the coplanar waveguide transmission line section B of " Z " font of dielectric-slab lower surface to micro-strip-co-planar waveguide unit and be set to
The head and the tail of " Z " shaped offset of microstrip transmission line section B, the coplanar waveguide transmission line section B and microstrip transmission line segment B of dielectric-slab upper surface
It is connected by metallic conduction via, the coplanar waveguide transmission line section A and coplanar waveguide transmission line section B are alternatively arranged, described micro-
Band transmission line section A and microstrip transmission line segment B is alternatively arranged.
The microstrip transmission line is developed along with requirement of the people to microwave system and device miniaturization is growing
A kind of microwave transmission line come, its structure are the one side arrangement transmission lines in dielectric-slab, and the another side of dielectric-slab arranges metal
Floor, it has many advantages, such as small, light-weight, bandwidth and can be integrated, is widely used in microwave small system
In system；Coplanar waveguide transmission line is that a kind of one side in dielectric-slab arranges transmission line, in the coplanar interior specific range of transmission line
Arrange big metal floor, the transmission line structure that transmission line is made to be located inside the slot of the metal floor of fluting, because of co-planar waveguide
The both sides of transmission line by metal surround respectively, and the edge effect of transmission line has obtained effective inhibition.Because having between pairs of transmission line
The isolation on metal ground, coupling can also be ignored substantially.In addition, coplanar waveguide transmission line also has, transmission frequency is high, easy processing
Feature is widely used in microwave system.
Coplanar waveguide transmission line is set in the metal ground of microstrip line by the transmission line that the present invention uses, and uses Z-shaped friendship
The structure type of fold back is pitched, with reference to the advantages of two types line and the double-deck micro-strip-co-planar waveguide of its physical arrangement feature composition is Z-shaped
Intersect fold back transmission line, longer transmission line is placed in specific physical space, by such transmission line for designing power splitter,
Efficiently realize the miniaturization of power splitter.
Wherein, preferred embodiment is：
The one end of the head end of the whereabouts micro-strip-co-planar waveguide unit for coplanar waveguide transmission line section A, the co-planar waveguide
The other end of transmission line section A is connect by metallic conduction via with one end of microstrip transmission line segment A, the microstrip transmission line segment A
Tail end of the other end as whereabouts micro-strip-co-planar waveguide unit；The head end of the inverted microstrip-co-planar waveguide unit is coplanar
One end of waveguide transmission line segment B, the other end of the coplanar waveguide transmission line section B pass through metallic conduction via and microstrip transmission line
One end connection of section B, the tail end of the other end of the microstrip transmission line segment B as inverted microstrip-co-planar waveguide unit；It is described to go
To the head end that the input terminal of circuit is whereabouts micro-strip-co-planar waveguide unit, it is micro- that the output terminal of the whereabouts circuit is set as whereabouts
The tail end of band-co-planar waveguide unit；The input terminal of the negater circuit is the head end of inverted microstrip-co-planar waveguide unit, described
The output terminal of negater circuit is set as the tail end of inverted microstrip-co-planar waveguide unit.
The micro-strip connection unit includes metallic conduction via and " L " shaped offset of microstrip transmission for being set to dielectric-slab upper surface
Line segment C, one end of the microstrip transmission line segment C are connect with the output terminal of whereabouts circuit, the other end by metallic conduction via with
The input terminal connection of negater circuit.
Signal on two work(branch sections of the present invention moves towards all same, specially：
One input transmission line is set to the input terminal for the whereabouts circuit that two work(branch sections are connected at the top of dielectric-slab,
It connect simultaneously with two metallic conduction vias, and the other end of the two metallic conduction vias, which is connected respectively to downwards, is set to Jie
On one end of two different coplanar waveguide transmission line section A of scutum bottom, input signal is led from input transmission line by metal
Electric via is transferred to one end of coplanar waveguide transmission line section A, then is transferred to from the other end of coplanar waveguide transmission line section A next
A metallic conduction via is passed up to through the metallic conduction via on the microstrip transmission line segment A being set at the top of dielectric-slab, this
Sample is exactly transmission of the signal on a whereabouts micro-strip-co-planar waveguide unit, from the micro- of this whereabouts micro-strip-co-planar waveguide unit
Next whereabouts micro-strip-co-planar waveguide unit is entered by metallic conduction via after other end output with transmission line section A.
The micro-strip connection unit of " L " font, i.e. microstrip transmission line segment C, there are two orthogonal arm, this micro-strips for tool
One end of transmission line section C and the output terminal (microstrip transmission line segment namely in whereabouts micro-strip-co-planar waveguide unit of whereabouts circuit
The tail end of A) be connected, the other end connected down to by metallic conduction via negater circuit input terminal (also with regard to inverted microstrip-altogether
The head end of the coplanar waveguide transmission line section B of face Wave guide unit).
Signal enters negater circuit from the output terminal of whereabouts circuit after micro-strip connection unit and metallic conduction via
Input terminal is transferred to tail end (namely the last one micro-strip of the last one inverted microstrip-co-planar waveguide unit along negater circuit
The tail end of transmission line section B), then exported from output port.
Isolation resistance is provided between the output terminal of the negater circuit of two work(branch sections.
The both ends of the isolation resistance are electrically connected the last one micro-strip in the negater circuit of two work(branch sections and pass
Between defeated line segment B, the Signal segregation degree of two output ports can be effectively improved.
The metallic conduction via is perpendicular to the upper and lower surface of dielectric-slab.
It is " Z " character form structure of the coplanar waveguide transmission line section A, " Z " character form structure of coplanar waveguide transmission line section B, micro-
" Z " character form structure of " Z " character form structure and microstrip transmission line segment B with transmission line section A includes middle-end and two ends, often
The end of a " Z " font is vertical with middle-end and extends round about respectively at the both ends of middle-end, and each " Z " font
The distance between two ends are equal.
The middle section of the microstrip transmission line segment A and the middle section of the coplanar waveguide transmission line section B immediately below it exist
Center in dielectric-slab normal orientation overlaps, and the middle section of the microstrip transmission line segment B and the co-planar waveguide immediately below it pass
Center of the middle section of defeated line segment A in dielectric-slab normal orientation overlaps.
In single work(branch section, the shortest distance between two ends in the structure of same " Z " font is defined as
L, the metallic conduction via on single work(branch section are set from front to back on dielectric-slab in the left and right sides, before unilateral
Spacing between the central axes of latter two metallic conduction via is defined as d, with conventional microstrip transmission line or coplanar wave guide transmission
Line is different, and the Z-shaped impedance operator for intersecting fold back transmission line of the novel double-layer micro-strip-co-planar waveguide and the length of l and spacing d have
It closes.The Z-shaped impedance for intersecting fold back transmission line of the novel double-layer micro-strip-co-planar waveguide and phase can be controlled by adjusting l and d
Position.
The material that the dielectric-slab is FR-4 makes, thickness 0.5mm, relative dielectric constant 4.4, and loss angle tangent is
0.02, the microstrip transmission line segment A, microstrip transmission line segment B, coplanar waveguide transmission line section A, coplanar waveguide transmission line section B are adopted
Made of metallic copper material, thickness 0.02mm, impedance are 70.7 Ω+j*0 Ω, the excessively electric hole of the metal it is a diameter of
0.3mm。
The invention has the advantages that：(1) transmission line is to be laid out respectively at one layer in the power splitter of the present patent application
The microstrip line and coplanar waveguide transmission line of the two sides of dielectric-slab, because of microstrip transmission line medium corresponding surface and coplanar wave guide transmission
Line medium does not have transmission line, therefore will arrange Coplanar stripline in the complete floor of non-co-planar microstrip transmission line structure, fully
Microstrip transmission line and the obverse space of coplanar waveguide transmission line medium is utilized, than in the prior art the knot of multilayer circuit board
Structure is simpler, effectively reduces cost, and can place longer transmission line in specific physical space in power splitter, and
It is more advantageous to the realization of miniaturization；(2) transmission line of small-sized power splitter of the invention is in the metal floor by microstrip transmission line
It arranges the structure type of coplanar waveguide transmission line, while transmission high-frequency signal is realized, can effectively inhibit microstrip transmission line
Electromagnetic radiation has stronger anti-interference, effectively increases transmittability of the power splitter to high-frequency signal.
Description of the drawings
Fig. 1 is surface structure schematic diagram of the present invention；
Fig. 2 is lower surface configuration schematic diagram of the present invention；
Fig. 3 is the dimensional structure diagram of the work(branch section of the present invention；
Fig. 4 be in the present invention in single work(branch section in different d transmission line phase characteristic schematic diagram；
Fig. 5 be in the present invention in single work(branch section in different d transmission line impedance operator schematic diagram；
Fig. 6 be in the present invention in single work(branch section in different l transmission line phase characteristic schematic diagram；
Fig. 7 be in the present invention in single work(branch section in different l transmission line impedance operator schematic diagram；
Fig. 8 is the input terminal return loss of the miniaturization power splitter of the embodiment of the present invention 1 and output port work(point ratio ginseng
Several emulation and test comparison schematic diagram；
Fig. 9 is the output port return loss of miniaturization power splitter of the embodiment of the present invention 1 and imitating for isolation parameter
True and test comparison schematic diagram；
Figure 10 is the miniaturization emulation of phase parameter of power splitter of the embodiment of the present invention 1 and test comparison schematic diagram；
Figure 11 is the dimensional structure diagram of double-deck micro-strip-coplanar waveguide transmission line；
Figure 12 is parameter L in double-deck micro-strip-coplanar waveguide transmission line structure0Variation to the shadow of the transmission line impedance characteristic
Loud schematic diagram；
Figure 13 is parameter w in double-deck micro-strip-coplanar waveguide transmission line structure1Variation to the shadow of the transmission line impedance characteristic
Loud schematic diagram；
Figure 14 is shadow of the variation to the transmission line impedance characteristic of parameter g in double-deck micro-strip-coplanar waveguide transmission line structure
Loud schematic diagram；
In figure：1st, input transmission line 100, microstrip transmission line D 101, coplanar waveguide transmission line D 2, microstrip transmission line segment C
3rd, output port 4, metal floor 5, dielectric-slab 6, metallic conduction via 71, coplanar waveguide transmission line section A 72, micro-strip pass
Defeated line segment A 81, coplanar waveguide transmission line section B 82, microstrip transmission line segment B 9, isolation resistance.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings.
Embodiment 1：
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, referring to the drawings and preferred reality is enumerated
Example is applied, the present invention is described in more detail.However, it is necessary to illustrate, many details listed in specification are only to be
Making one or more aspects of the reader to the present invention, there are one thorough explanations, even without these specific details can also
Realize the aspects of the invention.
As shown in Fig. 1~Figure 14, a kind of miniaturization power splitter of the present invention, including two work(branch sections, one it is defeated
Enter 1, two micro-strip connection unit of transmission line, two output ports 3, metal floor 4, dielectric-slab 5 and several metallic conduction vias
6, the metallic conduction via 6 runs through the upper and lower surface of dielectric-slab 5, and the metal floor 4 is set to the lower surface of dielectric-slab 5,
Two work(branch section structures are symmetrical set, and any work(branch section includes a whereabouts circuit and one reversely electric
Road, the output terminal of the whereabouts circuit are electrically connected with the input terminal of negater circuit by micro-strip connection unit, two work(point
The input terminal of the whereabouts circuit of minor matters is commonly connected to input transmission line 1, the output of the negater circuit of two work(branch sections
End is connected respectively to different output ports 3, and the whereabouts circuit arranges from front to back including several along dielectric-slab 5, head and the tail
Pass through 6 sequentially connected whereabouts micro-strip-co-planar waveguide unit of metallic conduction via, the whereabouts micro-strip-co-planar waveguide unit packet
Include " Z " font coplanar waveguide transmission line section A71 for being set to 5 lower surface of dielectric-slab and " Z " word for being set to 5 upper surface of dielectric-slab
The head and the tail of shaped microstrip transmission line section A72, the coplanar waveguide transmission line section A71 and microstrip transmission line segment A72 pass through metallic conduction
Via 6 is connected, the negater circuit arranges from back to front including several along dielectric-slab 5, from beginning to end by metallic conduction via 6 according to
The inverted microstrip of secondary connection-co-planar waveguide unit, the inverted microstrip-co-planar waveguide unit include being set to 5 following table of dielectric-slab
The coplanar waveguide transmission line section B81 of " Z " font in face and " Z " the shaped offset of microstrip transmission line section for being set to 5 upper surface of dielectric-slab
B82, the coplanar waveguide transmission line section B81 is connected with the head and the tail of microstrip transmission line segment B82 by metallic conduction via 6, described
Coplanar waveguide transmission line section A71 and coplanar waveguide transmission line section B81 are alternatively arranged, and the microstrip transmission line segment A72 and micro-strip pass
Defeated line segment B82 is alternatively arranged.
The microstrip transmission line is developed along with requirement of the people to microwave system and device miniaturization is growing
A kind of microwave transmission line come, its structure are the one side arrangement transmission lines in dielectric-slab, and the another side of dielectric-slab arranges metal
Floor, it has many advantages, such as small, light-weight, bandwidth and can be integrated, is widely used in microwave small system
In system；Coplanar waveguide transmission line is that a kind of one side in dielectric-slab arranges transmission line, in the coplanar interior specific range of transmission line
Arrange big metal floor, the transmission line structure that transmission line is made to be located inside the slot of the metal floor of fluting, because of co-planar waveguide
The both sides of transmission line by metal surround respectively, and the edge effect of transmission line has obtained effective inhibition.Because having between pairs of transmission line
The isolation on metal ground, coupling can also be ignored substantially.In addition, coplanar waveguide transmission line also has, transmission frequency is high, easy processing
Feature is widely used in microwave system.
The basic structure form for the transmission line that the present invention uses is arranges altogether in the complete metal floor of microstrip transmission line
Novel double-layer micro-strip-coplanar wave guide transmission structure of coplanar waveguide transmission line, this structure are realizing the same of transmission high-frequency signal
When, it can effectively inhibit the electromagnetic radiation of non-co-planar transmission line, finally realize that two kinds of transmission lines can transmit the mesh of electromagnetic signal
's.
As shown in figure 11, microstrip transmission line D100 is set to the top of dielectric-slab 5 along the longitudinal direction, and its rear end passes through metal
Conductive via 6 connects down to the rear end of coplanar waveguide transmission line D101, and the coplanar waveguide transmission line D101 is along the longitudinal direction
It is set to the bottom of dielectric-slab 5, the underface of microstrip transmission line D100.It is obtained through many experiments test, the novel double-layer micro-strip-
The impedance operator of coplanar waveguide transmission line is mainly by unidirectional length L0, microstrip transmission line D100 width w1And coplanar wave guide transmission
The influence of three parameters such as the gap width g between the transmission line and metallic channel of line, in design process, needed for user of service's adjustment
During impedance, by changing L0、w1And the parameters such as g can precisely adjust the bilayer micro-strip-coplanar waveguide transmission line real part and
Imaginary impedance.
As seen from Figure 12, it is different from conventional microstrip and coplanar waveguide transmission line, the novel double-layer micro-strip-coplanar wave
The impedance for leading transmission line is significantly changed as the variation of frequency can also generate.When phase shift is less than -90 °, with the increase of frequency,
Transmission line impedance real part and perception gradually increase, as the increase of frequency, transmission line impedance real part subtract when phase shift is more than -90 °
Small, capacitive enhancing.But for different L0, the amplitude that the bilayer micro-strip-coplanar waveguide transmission line real part and imaginary part change is not
Large change can be generated.It is worth noting that, when transmission line imaginary impedance is zero, real part resistance value is close to or up to maximum value, this
Shi Xiangyi is in 0.83 λ/2.The production this is because microstrip transmission line, coplanar waveguide transmission line and the two coupling alternately play a leading role
Raw joint effect.
As double-deck micro-strip-coplanar waveguide transmission line structure important component, the line width w of microstrip transmission line D1001With
And the gap width g between the transmission line and metallic channel of coplanar waveguide transmission line D101 is to influence the structural transmission impedance operator
Important parameter.Due to w1And the variation of g can ignore the influence for transmitting phase substantially, Figure 13 to Figure 14 is shown only respectively
Different w1With the change curve with frequency of bilayer micro-strip-coplanar waveguide transmission line impedance during g.As seen from the figure, w1Or g becomes larger,
Bilayer micro-strip-coplanar waveguide transmission line the impedance real part can all increase, with w1Become smaller or g becomes smaller, the bilayer micro-strip-coplanar wave
It leads transmission line impedance imaginary part and capacitive is gradually become by perception, this is because w1Or g becomes smaller can all introduce stronger capacitive coupling, makes
Capacitive in whole equivalent periodic line becomes larger.
Each microstrip transmission line of double-deck micro-strip-coplanar waveguide transmission line and coplanar waveguide transmission line are respectively provided with by the present invention
For " Z " font, and its head and the tail by metallic conduction via 6 is connected, is set as intersecting whereabouts circuit that fold back is laid with and reversely
Circuit, forms that double-deck micro-strip-co-planar waveguide is Z-shaped to intersect fold back transmission line, combines the excellent of microstrip line and coplanar waveguide transmission line
Point and physical arrangement feature, longer transmission line is placed in specific physical space, by this transmission line for designing power splitter,
Efficiently realize the miniaturization of power splitter.
The one end of the head end of the whereabouts micro-strip-co-planar waveguide unit for coplanar waveguide transmission line section A71, the coplanar wave
The other end for leading transmission line section A71 is connect by metallic conduction via 6 with one end of microstrip transmission line segment A72, and the micro-strip passes
Tail end of the other end of defeated line segment A72 as whereabouts micro-strip-co-planar waveguide unit；The inverted microstrip-co-planar waveguide unit
Head end is one end of coplanar waveguide transmission line section B81, and the other end of the coplanar waveguide transmission line section B81 passes through metallic conduction mistake
Hole 6 is connect with one end of microstrip transmission line segment B82, and the other end of the microstrip transmission line segment B82 is as inverted microstrip-coplanar wave
Lead the tail end of unit；The input terminal of the whereabouts circuit is the head end of whereabouts micro-strip-co-planar waveguide unit, the whereabouts circuit
Output terminal is set as the tail end of whereabouts micro-strip-co-planar waveguide unit；The input terminal of the negater circuit is inverted microstrip-coplanar wave
The head end of unit is led, the output terminal of the negater circuit is set as the tail end of inverted microstrip-co-planar waveguide unit.
The micro-strip connection unit includes metallic conduction via 6 and " L " shaped offset of microstrip biography for being set to 5 upper surface of dielectric-slab
Defeated line segment C2, one end of the microstrip transmission line segment C2 are connect with the output terminal of whereabouts circuit, and the other end passes through metallic conduction mistake
Hole 6 is connect with the input terminal of negater circuit.
Signal on two work(branch sections of the present embodiment moves towards all same, specially：
The top that one input transmission line 1 is set to dielectric-slab 5 is connected to the input of the whereabouts circuit of two work(branch sections
End, i.e. input transmission line 1 are connected respectively to downwards by two metallic conduction vias 6 is set to two of 5 bottom of dielectric-slab not
With coplanar waveguide transmission line section A71 one end on, the other end of signal from coplanar waveguide transmission line section A71 is transferred to next
A metallic conduction via 6 is passed up to the microstrip transmission line segment A72 for being set to 5 top of dielectric-slab through the metallic conduction via 6
On, such signal just completes the transmission on a whereabouts micro-strip-co-planar waveguide unit, from this whereabouts micro-strip-coplanar wave
Lead the microstrip transmission line segment A72 of unit the other end output after by metallic conduction via 6 enter next whereabouts micro-strip-altogether
Face Wave guide unit.
The micro-strip connection unit of " L " font, i.e. microstrip transmission line segment C2, there are two orthogonal arms for tool, this is micro-
Output terminal (the microstrip transmission line namely in whereabouts micro-strip-co-planar waveguide unit with transmission line section C2 one end Yu whereabouts circuit
The tail end of section A72) it is connected, the input terminal that the other end connects down to negater circuit by metallic conduction via 6 is (also just reversely micro-
The head end of the coplanar waveguide transmission line section B81 of band-co-planar waveguide unit).
Signal enters negater circuit from the output terminal of whereabouts circuit after micro-strip connection unit and metallic conduction via 6
Input terminal is transferred to tail end (namely the last one micro-strip of the last one inverted microstrip-co-planar waveguide unit along negater circuit
The tail end of transmission line section B82), then exported from output port 3.
Isolation resistance 9 is provided between the output terminal of the negater circuit of two work(branch sections.
The both ends of the isolation resistance 9 are electrically connected the last one micro-strip in the negater circuit of two work(branch sections and pass
Between defeated line segment B82, the Signal segregation degree of two output ports of the present embodiment is effectively improved.
The metallic conduction via 6 is perpendicular to the upper and lower surface of dielectric-slab 5.
" Z " character form structure of the coplanar waveguide transmission line section A71, " Z " font knot of coplanar waveguide transmission line section B81
" Z " character form structure of structure, " Z " character form structure of microstrip transmission line segment A72 and microstrip transmission line segment B82 includes middle-end and two
A end, the end of each " Z " font is vertical with middle-end and extends round about respectively at the both ends of middle-end, and each
The distance between two ends of " Z " font are equal.
The middle section of the microstrip transmission line segment A72 and the middle part of the coplanar waveguide transmission line section B81 immediately below it
Center point in 5 normal orientation of dielectric-slab overlaps, the middle section of the microstrip transmission line segment B82 and coplanar immediately below it
Center of the middle section of waveguide transmission line segment A71 in 5 normal orientation of dielectric-slab overlaps.
In single work(branch section, the shortest distance between two ends in the structure of same " Z " font is defined as
L, the metallic conduction via 6 on single work(branch section are set from front to back on dielectric-slab 5 in the left and right sides, unilateral
Spacing between the central axes of former and later two metallic conduction vias 6 is defined as d, is passed with conventional microstrip transmission line or co-planar waveguide
Defeated line is different, the length of the Z-shaped impedance operator and l and spacing d for intersecting fold back transmission line of the novel double-layer micro-strip-co-planar waveguide
It is related.The Z-shaped impedance for intersecting fold back transmission line of the novel double-layer micro-strip-co-planar waveguide and phase can be controlled by adjusting l and d
Position.It is special that Fig. 4~Fig. 7 illustrates the two parameters phase for intersecting fold back transmission line Z-shaped to the novel double-layer micro-strip-co-planar waveguide
Property and impedance operator influence, wherein, Fig. 4 be the present invention in single work(branch section transmission line in different d phase characteristic
Figure, Fig. 5 are the impedance operator figure of single work(branch section transmission line in different d in the present invention, and Fig. 6 is single work(point in the present invention
The phase characteristic figure of minor matters transmission line in different l, Fig. 7 are the resistance of single work(branch section transmission line in different l in the present invention
Anti- performance plot.
It follows that with the increase of d and l, double-deck micro-strip-co-planar waveguide Z-type intersects the physical length of fold back transmission line
Elongated, phase shift speed becomes faster.But for impedance, nearby Frequency point is still the change of structural impedance period for -90 ° of phase shift
The inflection point of change.In frequency range of the phase shift less than -90 °, with the increase of d, the top layer microstrip transmission line structure of introducing and bottom
Layer coplanar waveguide transmission line structure is also longer, which also can slightly become smaller.On the other hand, for reactance
For, the increase of d also increases more while longer top layer microstrip transmission line structure and bottom coplanar waveguide transmission line is introduced
Strong capacitance characteristic, it is different from non-crossing double-deck micro-strip-co-planar waveguide Z-type transmission line, as l increases, double-deck micro-strip-coplanar wave
Leading the variance values of Z-type intersection fold back transmission line structure impedance real part and imaginary part can also increase.
The material that the dielectric-slab 5 is FR-4 makes, thickness 0.5mm, relative dielectric constant 4.4, loss angle tangent
It is 0.02, the microstrip transmission line segment A72, microstrip transmission line segment B82, coplanar waveguide transmission line section A71, coplanar waveguide transmission line
Section B81 is made of metallic copper material, and thickness 0.02mm, impedance are 70.7 Ω+j*0 Ω, the excessively electric hole 6 of the metal
A diameter of 0.3mm.
In the present embodiment, small-sized power splitter overall dimensions are designed as 11mm*8mm, it is preferable that d=1mm, w0=0.95mm,
w1=0.5mm, w2=0.3mm, g=0.1mm, l=3.5, such as Fig. 2, d are that same two metals in side are led in single work(branch section
The distance between electric 6 center of via, w0In " Z " character form structure for the microstrip transmission line segment B82 being connected with output port 3
The width at end, w1For microstrip transmission line segment A72 and " Z " font of the non-microstrip transmission line segment B82 being connected with output port 3
The width of the middle-end of structure, w2For the biography inside the metallic channel of coplanar waveguide transmission line section A71 and coplanar waveguide transmission line section B81
The width of defeated line, g are the transmission line of the transmission line of coplanar waveguide transmission line section A71 and coplanar waveguide transmission line section B81 to metal
Gap width between slot, l are the shortest distance between the central axis of two ends of each " Z " character form structure.To this reality
Emulation and the test result of the functional parameter of example miniaturization power splitter are applied as shown in Fig. 8, Fig. 9 and Figure 10, with conventional microstrip work(point
Device is compared, under the premise of performance is basically unchanged, the power splitter size reduction of the present embodiment 88%, and S in figure11For input terminal
Return loss, S12For the work(point ratio of input terminal to one of output port, S13Work(for input terminal to another output port
Divide ratio, S22For the return loss of an output port, S33For the return loss of another output port, S23For two output terminals
Mouthful signal between isolation, simulation result show, and during centre frequency 1GHz, work(divides port work(point than respectively S12=-
3.14dB and S13=-3.11dB, S11=-48.65dB, S22=-25.83dB, S33=-25.98dB, work(divide interport isolation S23
=-28.76dB.This shows that the power splitter work(point loss is less than 5.6% at working frequency points.However, generally too compact knot
Structure design often introduces stronger electromagnetic coupling, and the 3dB Wilkinson power dividers based on the structure design are at resonant frequency
Insertion loss very little, it was demonstrated that the structure also disclosure satisfy that the related electromagnetism of device is special reduce device overall dimensions while
The requirement of property.- 15dB impedance bandwidths are from 0.69GHz to 1.25GHz.On the other hand, test result is shown, -15dB impedance bandwidths
From 0.73GHz to 1.30GHz, reach 62.8%.The frequency range that work(divides port to be better than 15dB isolations is 0.43GHz to 1.69GHz.
Figure 10 is distributed for power splitter phase characteristic.The results show that in the range of 0.75GHz to 1.35GHz., output port phase difference exists
Within 0 ° ± 4 °.The results show that intersecting the power splitter of fold back transmission line based on double-deck micro-strip-co-planar waveguide Z-type is ensuring work(point
Under the premise of device performance, the design object of miniaturization is realized.
The above is the embodiment of the present invention, is not intended to limit the scope of the invention, every to utilize invention
The equivalent structure or equivalent flow shift that specification and accompanying drawing content are made directly or indirectly is used in other relevant skills
Art field, is included within the scope of the present invention.
Claims (8)
1. a kind of miniaturization power splitter, it is characterised in that：Connect including two work(branch sections, an input transmission line, two micro-strips
Order member, two output ports, metal floor, dielectric-slab and several metallic conduction vias, the metallic conduction via is through Jie
The upper and lower surface of scutum, the metal floor are set to the lower surface of dielectric-slab, and two work(branch section structures are symmetrical
Setting, any work(branch section include a whereabouts circuit and a negater circuit, the output terminal of the whereabouts circuit with it is anti-
It is electrically connected to the input terminal of circuit by micro-strip connection unit, the input terminal of the whereabouts circuit of two work(branch sections connects jointly
Input transmission line is connected to, the output terminal of the negater circuit of two work(branch sections is connected respectively to different output ports, institute
Whereabouts circuit is stated to arrange from front to back along dielectric-slab including several, is micro- by the sequentially connected whereabouts of metallic conduction via from beginning to end
Band-co-planar waveguide unit, " Z " font that the whereabouts micro-strip-co-planar waveguide unit includes being set to dielectric-slab lower surface are coplanar
Waveguide transmission line segment A and " Z " shaped offset of microstrip transmission line section A, the coplanar waveguide transmission line section A for being set to dielectric-slab upper surface
It is connected with the head and the tail of microstrip transmission line segment A by metallic conduction via, the negater circuit includes several along dielectric-slab from rear
Forward permutations pass through the sequentially connected inverted microstrip of metallic conduction via-co-planar waveguide unit, the inverted microstrip-common from beginning to end
Face Wave guide unit includes being set to the coplanar waveguide transmission line section B of " Z " font of dielectric-slab lower surface and be set on dielectric-slab
The head and the tail of " Z " shaped offset of microstrip transmission line section B, the coplanar waveguide transmission line section B and microstrip transmission line segment B on surface pass through metal
Conductive via is connected, and the coplanar waveguide transmission line section A and coplanar waveguide transmission line section B are alternatively arranged, the microstrip transmission line
Section A and microstrip transmission line segment B is alternatively arranged.
2. a kind of miniaturization power splitter according to claim 1, it is characterised in that：Whereabouts micro-strip-co-planar waveguide the list
The head end of member is one end of coplanar waveguide transmission line section A, and the other end of the coplanar waveguide transmission line section A passes through metallic conduction mistake
Hole is connect with one end of microstrip transmission line segment A, and the other end of the microstrip transmission line segment A is as whereabouts micro-strip-co-planar waveguide list
The tail end of member；The one end of the head end of the inverted microstrip-co-planar waveguide unit for coplanar waveguide transmission line section B, the coplanar wave
The other end for leading transmission line section B is connect by metallic conduction via with one end of microstrip transmission line segment B, the microstrip transmission line segment
Tail end of the other end of B as inverted microstrip-co-planar waveguide unit；The input terminal of the whereabouts circuit is whereabouts micro-strip-coplanar
The head end of Wave guide unit, the output terminal of the whereabouts circuit are set as the tail end of whereabouts micro-strip-co-planar waveguide unit；It is described reversed
The input terminal of circuit is the head end of inverted microstrip-co-planar waveguide unit, the output terminal of the negater circuit be set as inverted microstrip-
The tail end of co-planar waveguide unit.
3. a kind of miniaturization power splitter according to claim 2, it is characterised in that：The micro-strip connection unit includes metal
Conductive via and " L " the shaped offset of microstrip transmission line section C for being set to dielectric-slab upper surface, one end of the microstrip transmission line segment C with
The output terminal connection of whereabouts circuit, the other end are connected by the input terminal of metallic conduction via and negater circuit.
4. a kind of miniaturization power splitter according to claim 2, it is characterised in that：The reversed electricity of two work(branch sections
Isolation resistance is provided between the output terminal on road.
5. a kind of miniaturization power splitter according to claim 4, it is characterised in that：The metallic conduction via is perpendicular to Jie
The upper and lower surface of scutum.
6. a kind of miniaturization power splitter according to Claims 1 to 5 any claim, it is characterised in that：It is described coplanar
" Z " character form structure of waveguide transmission line segment A, " Z " character form structure of coplanar waveguide transmission line section B, microstrip transmission line segment A " Z "
" Z " character form structure of character form structure and microstrip transmission line segment B include middle-end and two ends, and each " Z " font is described
End is vertical with middle-end and extends round about respectively at the both ends of middle-end, and between two ends of each " Z " font
Apart from equal.
7. a kind of miniaturization power splitter according to claim 6, it is characterised in that：The centre of the microstrip transmission line segment A
The center of part and the middle section of the coplanar waveguide transmission line section B immediately below it in dielectric-slab normal orientation overlaps, described
The middle section of microstrip transmission line segment B and the middle section of the coplanar waveguide transmission line section A immediately below it are in dielectric-slab normal direction side
Upward center overlaps.
8. a kind of miniaturization power splitter according to claim 7, it is characterised in that：The dielectric-slab is the material system of FR-4
Make, thickness 0.5mm, relative dielectric constant 4.4, loss angle tangent 0.02, the microstrip transmission line segment A, micro-strip transmission
Line segment B, coplanar waveguide transmission line section A, coplanar waveguide transmission line section B are made of metallic copper material, thickness 0.02mm,
Impedance is 70.7 Ω+j*0 Ω, a diameter of 0.3mm in the excessively electric hole of the metal.
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|---|---|---|---|
| CN201810252626.XA CN108232397A (en) | 2018-03-26 | 2018-03-26 | Miniaturized merit divides ware |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810252626.XA CN108232397A (en) | 2018-03-26 | 2018-03-26 | Miniaturized merit divides ware |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020147063A1 (en) * | 2019-01-17 | 2020-07-23 | 罗森伯格技术（昆山）有限公司 | Filter |
| WO2020177605A1 (en) * | 2019-03-01 | 2020-09-10 | 青岛理工大学 | Miniature dual-frequency wilkinson power divider |
| CN113156375A (en) * | 2021-03-30 | 2021-07-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Passive phase modulation chip of millimeter wave phased array T/R assembly |
| CN115173017A (en) * | 2022-06-28 | 2022-10-11 | 中国电子科技集团公司第四十三研究所 | Miniature 90-degree power divider adopting folding coupling line structure |
-
2018
- 2018-03-26 CN CN201810252626.XA patent/CN108232397A/en not_active Withdrawn
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| Title |
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| 田海燕: ""天线及其馈电网络小型化的研究"", 《中国博士学位论文全文数据库（电子期刊）》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020147063A1 (en) * | 2019-01-17 | 2020-07-23 | 罗森伯格技术（昆山）有限公司 | Filter |
| US11984635B2 (en) | 2019-01-17 | 2024-05-14 | Prose Technologies (Suzhou) Co., Ltd. | Filter |
| WO2020177605A1 (en) * | 2019-03-01 | 2020-09-10 | 青岛理工大学 | Miniature dual-frequency wilkinson power divider |
| CN113156375A (en) * | 2021-03-30 | 2021-07-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Passive phase modulation chip of millimeter wave phased array T/R assembly |
| CN115173017A (en) * | 2022-06-28 | 2022-10-11 | 中国电子科技集团公司第四十三研究所 | Miniature 90-degree power divider adopting folding coupling line structure |
| CN115173017B (en) * | 2022-06-28 | 2024-04-09 | 中国电子科技集团公司第四十三研究所 | Miniature 90-degree power divider adopting folding coupling line structure |
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