CN108231921A - A kind of printing process of PERC cell back fields - Google Patents
A kind of printing process of PERC cell back fields Download PDFInfo
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- CN108231921A CN108231921A CN201711483066.0A CN201711483066A CN108231921A CN 108231921 A CN108231921 A CN 108231921A CN 201711483066 A CN201711483066 A CN 201711483066A CN 108231921 A CN108231921 A CN 108231921A
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- Prior art keywords
- perc
- width
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- printing
- batteries
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 73
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 73
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 73
- 238000007639 printing Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008569 process Effects 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007650 screen-printing Methods 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 abstract description 16
- 239000004411 aluminium Substances 0.000 abstract description 16
- 239000013078 crystal Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000008859 change Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to battery process technical fields, specifically disclose a kind of printing process of PERC cell back fields.The present invention prints Al-BSF, and the pattern of Al-BSF printing screen is using the method for silk-screen printing：The direction parallel with PERC battery slotted lines is defined as Y-direction, the direction vertical with PERC battery slotted lines is defined as X-direction, and the radical of Y-direction is consistent with the quantity that PERC batteries are slotted, and width is 24 times of PERC battery groove widths, X-direction radical is 100 150,30 80 microns of width.The present invention effectively reduces the usage amount of aluminium paste, monolithic aluminium paste dosage reduces by 60 80%, the purpose for reducing production cost is finally reached, suitable for the making of crystal silicon solar PERC batteries by changing back side aluminium paste printing screen pattern.
Description
Technical field
The present invention relates to battery process technical field more particularly to a kind of printing processes of PERC cell back fields.
Background technology
AT＆T Labs of the U.S. in 1954 prepares the monocrystaline silicon solar cell of first piece of transfer efficiency 6% in the world,
By the continuous exploration of more than 60 years, solar cell power generation technology achieved huge progress, in solar cells crystal silicon
How solar cell improves battery conversion efficiency, reduces single watt of cost, be the skill that we study always in occupation of the market mainstream
Art subject.With being constantly thinned for crystal silicon battery thickness, the compound master for being increasingly becoming limitation battery conversion efficiency of cell backside
Want factor.PERC batteries are a kind of new construction batteries in order to solve back side Complex Problem, which effectively improves crystal silicon
The transfer efficiency of battery, so as to be applied in large-scale production.But the printing technology of existing Al-BSF can cause aluminium paste
A large amount of wastes, are unfavorable for the cost reduction of PERC batteries and large-scale industrial production.
Invention content
For existing PERC batteries it is of high cost the problems such as, the present invention provides a kind of printing process of PERC cell back fields.
To achieve the above object of the invention, the embodiment of the present invention employs following technical solution：
A kind of printing process of PERC cell back fields prints Al-BSF, and the screen printing using the method for silk-screen printing
The pattern of brush is：The direction parallel with PERC battery slotted lines is defined as Y-direction, and the direction vertical with PERC battery slotted lines is determined
For justice for X-direction, the radical of Y-direction is consistent with the quantity that PERC batteries are slotted, and width is 2-4 times of PERC battery groove widths, X
Direction radical be 100-150 roots, 30-80 microns of width.
Relative to the prior art, the printing process of PERC cell back fields provided by the invention, according to PERC battery structures spy
The printing feature of property and existing Al-BSF, the only aluminium paste of slotted section is contacted with silicon and is played a role, and area of slotting only accounts for
5% or so of silicon area by changing back side aluminium paste printing screen pattern, effectively reduces the usage amount of aluminium paste, monolithic
Aluminium paste dosage reduces 60-80%, the purpose for reducing production cost is finally reached, suitable for the system of crystal silicon solar PERC batteries
Make.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to needed in the embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the process flow chart of PERC batteries provided in an embodiment of the present invention；
Fig. 2 is local Al-BSF vertical view provided in an embodiment of the present invention；
Fig. 3 is existing PERC battery structures schematic diagram；
Fig. 4 is PERC battery structures schematic diagram provided in an embodiment of the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
The embodiment of the present invention provides a kind of printing process of PERC cell back fields, using the method printing aluminium back of the body of silk-screen printing
, and the pattern of the silk-screen printing is：The direction parallel with PERC battery slotted lines is defined as Y-direction, is opened with PERC batteries
The vertical direction of the line of rabbet joint is defined as X-direction, and the radical of Y-direction is consistent with the quantity that PERC batteries are slotted, and width is PERC batteries
2-4 times of groove width, X-direction radical be 100-150 roots, 30-80 microns of width.
The manufacturing technology of patterns flow of the Al-BSF printing screen of the present invention is simple, technical conditions requirement is low, and does not influence
The transfer efficiency of PERC batteries, the reduction of aluminium paste dosage are conducive to large-scale industrial production, reduce production cost.
Preferably, the PERC batteries are 6 cun of silicon chips.
Preferably, the pattern of the silk-screen printing is：The radical of Y-direction is consistent with the quantity that PERC batteries are slotted, width
It is 2.6-4 times of PERC battery groove widths, X-direction radical is 100,30-50 microns of width.
Preferably, the pattern of the silk-screen printing is：The radical of Y-direction is consistent with the quantity that PERC batteries are slotted, width
It is 2.6 times of PERC battery groove widths, X-direction radical is 100,30-50 microns of width.
Preferably, PERC batteries fluting radical is 150,45 microns of line width, and the pattern of the silk-screen printing is：Y-direction
Radical be 150, width is 120 microns, X-direction radical be 100,50 microns of width.
Preferably, PERC cell back fields are prepared using full Al-BSF printing technology.
The PERC batteries Al-BSF is full Al-BSF printing technology, with common crystal silicon battery Al-BSF printing technology one
It causes, does not change the manufacture craft of the PERC batteries of the present invention.
The technological process of PERC batteries includes crystal silicon chip making herbs into wool, non-flocking mirror polish, and making herbs into wool face phosphorus doping makes PN junction, wet
Method etch cleaner, burnishing surface deposition of aluminium oxide, front and back make silicon nitride film, to burnishing surface silicon nitride slot, printing just, the back of the body
Face electrode, sintering, test.Secondly printed back main gate line first is printed Al-BSF using Al-BSF printing screen, is finally printed
Front electrode, drying sintering obtain PERC batteries.
The printing process of PERC cell back fields provided by the invention does not influence PERC battery conversion efficiencies, does not change making
Technique by changing back side aluminium paste printing screen pattern, effectively reduces the usage amount of aluminium paste, monolithic aluminium paste dosage reduces
60-80% is finally reached the purpose for reducing production cost.
It is provided in an embodiment of the present invention in order to better illustrate, it is illustrated below by embodiment is further.
Embodiment 1
The present embodiment provides a kind of printing processes of PERC cell back fields, print Al-BSF using the method for silk-screen printing,
The PERC batteries fluting radical of selection is 150, and 45 microns of line width, the direction parallel with PERC battery slotted lines is defined as Y side
To the direction vertical with PERC battery slotted lines is defined as X-direction, and the pattern of Al-BSF printing screen (6 cun of silicon chips) is：Y side
To radical be 150, width is 120 microns, X-direction radical be 100,50 microns of width.The present invention provides PERC batteries
Al-BSF is full Al-BSF printing technology, consistent with common crystal silicon battery Al-BSF printing technology.PERC provided by the invention
The process flow chart of battery is as shown in Figure 1.During printing, secondly printed back main gate line first is printed using Al-BSF printing screen
Brush Al-BSF, finally prints front electrode, with reference to local Al-BSF vertical view, as shown in Fig. 2, drying sintering obtains PERC electricity
Pond.
Existing PERC battery structures as shown in figure 3, the PERC battery structures that prepare of the present invention as shown in figure 4, the present invention not
Change manufacture craft, PERC battery structures will not be changed.
PERC batteries prepared by embodiment 1 are compared with conventional batteries and routine PERC batteries, as a result such as 1 institute of table
Show.
Table 1
As can be seen from Table 1, the printing process of ERC cell back fields provided in an embodiment of the present invention, does not influence PERC batteries
Transfer efficiency does not change manufacture craft, by changing back side aluminium paste printing screen pattern, effectively reduces the usage amount of aluminium paste
Monolithic aluminium paste dosage reduces 60-80%.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modification, equivalent replacement or improvement made within refreshing and principle etc., should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of printing process of PERC cell back fields, it is characterised in that：Al-BSF, and institute are printed using the method for silk-screen printing
The pattern for stating silk-screen printing is：The direction parallel with PERC battery slotted lines is defined as Y-direction, vertical with PERC battery slotted lines
Direction be defined as X-direction, the radical of Y-direction is consistent with the quantity that PERC batteries are slotted, and width is PERC battery groove widths
2-4 times, X-direction radical be 100-150 roots, 30-80 microns of width.
2. the printing process of PERC cell back fields as described in claim 1, it is characterised in that：The PERC batteries are 6 cun of silicon
Piece.
3. such as the printing process of claim 1-2 any one of them PERC cell back fields, it is characterised in that：The silk-screen printing
Pattern be：The radical of Y-direction is consistent with the quantity that PERC batteries are slotted, and width is 2.6-4 times of PERC battery groove widths,
X-direction radical is 100,30-50 microns of width.
4. the printing process of PERC cell back fields as claimed in claim 3, it is characterised in that：The pattern of the silk-screen printing
For：The radical of Y-direction is consistent with the quantity that PERC batteries are slotted, and width is 2.6 times of PERC battery groove widths, X-direction root
Number is 100,30-50 microns of width.
5. such as the printing process of claim 1-2 any one of them PERC cell back fields, it is characterised in that：PERC batteries are slotted
Radical is 150,45 microns of line width, and the pattern of the silk-screen printing is：The radical of Y-direction is 150, and width is 120 microns,
X-direction radical is 100,50 microns of width.
6. the printing process of PERC cell back fields as described in claim 1, it is characterised in that：Using full Al-BSF printing technology
Prepare PERC cell back fields.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711483066.0A CN108231921A (en) | 2017-12-29 | 2017-12-29 | A kind of printing process of PERC cell back fields |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711483066.0A CN108231921A (en) | 2017-12-29 | 2017-12-29 | A kind of printing process of PERC cell back fields |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108231921A true CN108231921A (en) | 2018-06-29 |
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ID=62646242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711483066.0A Pending CN108231921A (en) | 2017-12-29 | 2017-12-29 | A kind of printing process of PERC cell back fields |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593204A (en) * | 2011-01-10 | 2012-07-18 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
| CN202633327U (en) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | Facade grid line electrode of crystalline silicon solar cell |
| CN203277400U (en) * | 2013-05-21 | 2013-11-06 | 江苏爱多光伏科技有限公司 | Solar cell back field with reticular structure |
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN203491270U (en) * | 2013-08-31 | 2014-03-19 | 山东力诺太阳能电力股份有限公司 | Back electrode structure of crystalline silicon solar cell |
| CN106449877A (en) * | 2016-10-17 | 2017-02-22 | 浙江晶科能源有限公司 | PERC preparation method |
| CN106876495A (en) * | 2017-03-03 | 2017-06-20 | 浙江爱旭太阳能科技有限公司 | A kind of p-type PERC double-sided solar batteries and preparation method thereof |
-
2017
- 2017-12-29 CN CN201711483066.0A patent/CN108231921A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593204A (en) * | 2011-01-10 | 2012-07-18 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
| CN202633327U (en) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | Facade grid line electrode of crystalline silicon solar cell |
| CN203277400U (en) * | 2013-05-21 | 2013-11-06 | 江苏爱多光伏科技有限公司 | Solar cell back field with reticular structure |
| CN203491270U (en) * | 2013-08-31 | 2014-03-19 | 山东力诺太阳能电力股份有限公司 | Back electrode structure of crystalline silicon solar cell |
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN106449877A (en) * | 2016-10-17 | 2017-02-22 | 浙江晶科能源有限公司 | PERC preparation method |
| CN106876495A (en) * | 2017-03-03 | 2017-06-20 | 浙江爱旭太阳能科技有限公司 | A kind of p-type PERC double-sided solar batteries and preparation method thereof |
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