CN105514183B - A kind of preparation method of crystal silicon solar batteries front electrode - Google Patents
A kind of preparation method of crystal silicon solar batteries front electrode Download PDFInfo
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- CN105514183B CN105514183B CN201510861174.1A CN201510861174A CN105514183B CN 105514183 B CN105514183 B CN 105514183B CN 201510861174 A CN201510861174 A CN 201510861174A CN 105514183 B CN105514183 B CN 105514183B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000007650 screen-printing Methods 0.000 claims abstract description 36
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 34
- 239000010959 steel Substances 0.000 claims abstract description 34
- 238000007639 printing Methods 0.000 claims abstract description 31
- 239000011267 electrode slurry Substances 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of preparation method of crystal silicon solar batteries front electrode, including the step of form main gate line and secondary grid line on the solar cell, this method includes：S101, offer one have the screen printing screens of main grid line graph, and main gate line is formed on the solar cell by silk-screen printing technique；S102, offer one have the steel mesh printing screen plate of secondary grid line figure, form secondary grid line on solar cell by steel mesh typography；S103, the solar cell for being formed with the main gate line and secondary grid line is sintered.This method prepares main gate line and secondary grid line respectively by two kinds of typographies, and the depth-width ratio for the secondary grid line that can be improved, can not only reduce grid line resistance brings power loss, while optical loss can also be reduced.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, and in particular to a kind of crystal silicon solar batteries front electrode
Preparation method.
Background technology
Crystal silicon solar batteries are a kind of solar energy can be transformed into the electronic component of electric energy.Crystalline silicon class is too
The preparation of positive energy battery is typically by processes such as making herbs into wool, diffusion, plated film, silk-screen printing, sintering.Making herbs into wool is divided into monocrystalline, polycrystalline system
Suede, single crystal battery is that the method for using alkali making herbs into wool forms pyramid matte in silicon chip surface, and polycrystalline battery uses the side of acid etch
Method can increase absorption of the sunshine in battery surface, reach sunken light in silicon chip surface formation pit matte, the matte of silicon face
Effect；Diffusing procedure is to silicon chip to be internally formed P-N junction by way of thermal diffusion, so when there is light irradiation, inside silicon chip
Voltage can be just formed, is the basis that solar cell generates electricity；Coating process is to reduce minority carrier in battery surface
It is compound, the conversion efficiency of crystal silicon solar cell sheet can be improved；Silkscreen process is exactly the electricity for making solar cell
Pole, so can just export electric current when light irradiation.Silk-screen printing is most widely used one in prepared by present crystal silicon battery
Technique is planted, then process sequence carries out the printing and drying of Al-BSF, finally carry out first to carry out backplate printing and drying
The printing of front electrode, drying, are being sintered, and allow silver paste and the battery formation contact for preparing that electrode is used.
In the front electrode of crystal silicon solar batteries, electrode structure generally includes crisscross main gate line and secondary grid line,
Main gate line is electrical connected with secondary grid line.When there is illumination, cell piece will produce electric current, and electric current passes through internal emitter flow chart
The secondary grid line of face electrode, collects and then is flowed in battery main gate line via secondary grid line and exported.Electric current is collected in secondary grid line
During can produce loss, it is this that we are known as the power loss of resistance.Battery main gate line and secondary grid line be in battery by
Smooth surface, will necessarily so block a part of light irradiation in battery surface, so that the effective area of shining light of battery is reduced, this part
We term it optical loss for loss.Increase main gate line and the quantity of secondary grid line can be improved for solar cell formation electric current
Capacity gauge, improves the conversion efficiency of battery, but if grid line width is accelerated to increase and block damage without reduction
Lose.
At present, the silk-screen printing technique that the preparation of front electrode is generally used, the main gate line of front electrode and secondary grid line
Figure formation in same screen mesh printing plate, directly prepared by silk-screen printing technique and form main gate line and secondary grid line, its
The figure of the front electrode prepared is as shown in figure 1, front electrode includes crisscross main gate line 1 and secondary grid line 2, master
Grid line 1 is electrical connected with secondary grid line 2.Normally, the quantity of secondary grid line 2 is 90, and the width of secondary grid line 2 is 40 μm, secondary grid line 2
Between spacing be 1.724mm；The quantity of main gate line 1 is 3, and the widest part of main gate line 1 is 1.5mm, and the narrower place of main gate line 1 is wide
Spend for 0.1mm, the spacing between main gate line 1 is 52mm.
Fig. 2 is the structural representation of screen mesh printing plate, as shown in Fig. 2 screen mesh printing plate 3 is made of using woven wire, half tone
Visuals just inevitably has the node that wire 3a and wire 3a intersect, and they hinder passing through for slurries, and slurry
And toughness, the obstruction for causing slurry to be subject to during penetrating is more serious, limits depth-width ratio.Especially for secondary grating figure
Shape 2a part, because the width of secondary grid line 2 is inherently smaller, prepares secondary grid line 2 using silk-screen printing, limits secondary grid line
2 depth-width ratio.Fig. 3 is the 3D shape appearance figures of the secondary grid line prepared using silk-screen printing, as shown in figure 3, due to screen mesh printing plate
There is wire and wire node, the secondary grid line surface irregularity prepared increases resistance, is unfavorable for electric current in figure
Collect.
In the popularization and application of solar energy, maximum obstacle is exactly that cost is too high, optimizes the process conditions of each operation, is to carry
High efficiency, the effective way for reducing cost.If secondary grid line width can be effectively reduced, secondary grid line height is improved, so not
Grid line resistance can only be reduced brings power loss, while optical loss can also be reduced.
The content of the invention
In view of the deficiency that prior art is present, the invention provides a kind of preparation side of crystal silicon solar batteries front electrode
Method, this method prepares main gate line and secondary grid line respectively by two kinds of typographies, the depth-width ratio for the secondary grid line that can be improved, not only
Grid line resistance can be reduced brings power loss, while optical loss can also be reduced.
To achieve these goals, present invention employs following technical scheme：
A kind of preparation method of crystal silicon solar batteries front electrode, including main gate line and pair are formed on the solar cell
The step of grid line, this method includes：S101, offer one have the screen printing screens of main grid line graph, pass through screen printing dataller
Skill forms main gate line on the solar cell；S102, offer one have the steel mesh printing screen plate of secondary grid line figure, are printed by steel mesh
Dataller's skill forms secondary grid line on solar cell；S103, the solar cell for being formed with the main gate line and secondary grid line is burnt
Knot.
Wherein, step S101 is specifically included：The screen printing screens are arranged on the solar cell first, so
Electrode slurry is added on the screen printing screens afterwards, finally moving scraper makes electrode slurry pass through the silk-screen printing net
Version, forms the main gate line on the solar cell.
Wherein, in silk-screen printing technique, the translational speed of scraper is 180~220mm/s, and scraper pressure is 7~9kgf,
The off-network spacing of screen printing screens is 1.25~1.35mm.
Wherein, the quantity of the main gate line is 4~6, and the width of the main gate line is 0.68~1.0mm.
Wherein, the quantity of the main gate line is 5, and the width of the main gate line is 0.8mm.
Wherein, step S102 is specifically included：The steel mesh printing screen plate is arranged on the solar cell first, so
Electrode slurry is added on the steel mesh printing screen plate afterwards, finally moving scraper makes electrode slurry pass through the steel mesh printing net
Version, forms the secondary grid line on the solar cell.
Wherein, in steel mesh typography, the translational speed of scraper is 220~240mm/s, scraper pressure is 4.5~
5.5kgf, the off-network spacing of screen printing screens is 1.48~1.55mm.
Wherein, the quantity of the secondary grid line is 100~110, and the width of the secondary grid line is 0.20~0.25 μm.
Wherein, the quantity of the secondary grid line is 106, and the width of the secondary grid line is 0.25 μm, adjacent two secondary grid lines
Spacing be 1.7213mm.
Wherein, the main gate line includes the multiple solid parts and multiple hollow-out parts that are sequentially connected, the solid part and described
Hollow-out parts alternate intervals are set.
Compared to prior art, the preparation method of the crystal silicon solar batteries front electrode provided in the embodiment of the present invention,
The preparation of front electrode is divided to two typographies, prepares to form main gate line by silk-screen printing technique, passes through steel mesh typography
Prepare and form secondary grid line.Due in steel mesh printing screen plate used in steel mesh typography, in its figure without wire and
Wire node, the secondary grid line that width is small, density is big is prepared using this kind of half tone, and electrode slurry can pass through steel mesh printing
Half tone, its secondary grid line prepared has bigger depth-width ratio, and the height more even uniform of secondary grid line, finally gives
Front electrode can not only reduce grid line resistance bring power loss, while optical loss can also be reduced to improve light
Photoelectric transformation efficiency.Also, the front electrode prepared using this method, the consumption of electrode slurry can save 10% or so,
Reduce production cost.
Brief description of the drawings
Fig. 1 is the structural representation of existing crystal silicon solar batteries front electrode；
Fig. 2 is the structural diagrams of screen printing screens；
Fig. 3 is the 3D shape appearance figures of the secondary grid line prepared using silk-screen printing technique；
Fig. 4 is the process chart of the preparation method of front electrode of solar battery provided in an embodiment of the present invention；
Fig. 5 is the structural diagrams of steel mesh printing screen plate；
Fig. 6 is the 3D shape appearance figures of the secondary grid line prepared using steel mesh typography；
Fig. 7 is the structural representation for the front electrode of solar battery that the embodiment of the present invention is prepared.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in accompanying drawing and according to
What the embodiments of the present invention of accompanying drawing description were merely exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show and according to the solution of the present invention closely related structure and/or process step, and eliminate little with relation of the present invention
Other details.
A kind of preparation method of crystal silicon solar batteries front electrode is present embodiments provided, this method is included in solar energy
The step of main gate line and secondary grid line are formed on battery.Refering to Fig. 4, this method comprises the following steps：
S101, offer one have the screen printing screens of main grid line graph, by silk-screen printing technique in solar cell
Upper formation main gate line.Specifically, in the step, the screen printing screens are arranged on the solar cell first, so
Electrode slurry is added on the screen printing screens afterwards, finally moving scraper makes electrode slurry pass through the silk-screen printing net
Version, forms the main gate line on the solar cell.Wherein, in silk-screen printing technique, the translational speed of scraper can be with
Select as 180~220mm/s, scraper pressure can be selected as 7~9kgf, the off-network spacing of screen printing screens can select be
1.25~1.35mm.Most preferably, the translational speed selection of scraper is 200mm/s, and scraper pressure selection is 8kgf, silk screen
The off-network spacing selection of printing screen plate is 1.3mm.
S102, offer one have the steel mesh printing screen plate of secondary grid line figure, by steel mesh typography on solar cell
Form secondary grid line.Specifically, in the step, the steel mesh printing screen plate is arranged on the solar cell first, then
Electrode slurry is added on the steel mesh printing screen plate, finally moving scraper makes electrode slurry pass through the steel mesh printing screen plate,
The secondary grid line is formed on the solar cell.Wherein, in steel mesh typography, the translational speed of scraper can be selected
For 220~240mm/s, scraper pressure can be selected as 4.5~5.5kgf, the off-network spacing of screen printing screens can select be
1.48~1.55mm.Most preferably, the translational speed selection of scraper is 230mm/s, and scraper pressure selection is 5kgf, silk screen
The off-network spacing selection of printing screen plate is 1.5mm.
S103, the solar cell for being formed with the main gate line and secondary grid line is sintered, obtains crystal silicon solar batteries
Front electrode.
Wherein, the structural diagrams of steel mesh printing screen plate used in step S102 are as shown in figure 5, steel mesh printing screen plate 100
Figure 101 in do not have wire and wire node, prepare the secondary grid line that width is small, density is big, electricity using this kind of half tone
Pole slurry can be passed through, and its secondary grid line prepared has bigger depth-width ratio.Also, 3D patterns as shown in Figure 6
Figure, the height more even uniform of its secondary grid line prepared, therefore the front electrode finally given can not only reduce grid
Line resistance brings power loss, while can also reduce optical loss to improve photoelectric transformation efficiency.
Fig. 7 is the structural representation for the front electrode of solar battery that preparation method as above is obtained.As shown in fig. 7, system
Standby obtained front electrode includes (X-direction in such as Fig. 7) a plurality of main gate line 10 arranged in parallel in the first direction, and along the
Two directions (Y-direction in such as Fig. 7) a plurality of secondary grid line 20 arranged in parallel, a plurality of secondary grid line 20 and a plurality of main gate line
10 are electrically connected with each other；Wherein, second direction is mutually perpendicular to first direction.Secondary grid line 20 is mainly used in collecting solar cell
The photogenerated current of generation, the electric current that main gate line 10 is used to collect secondary grid line 10 collects output.
Wherein, the quantity of the main gate line 10 is set according to the actual needs, and the quantity of main gate line 10 is more, electric current export
Performance is better, but shading-area is also bigger, production cost is higher, it is therefore desirable to which balanced balanced current exports performance and shading-area
Relation, can generally select to be set to 3~6.The length of every main gate line 10 needs the size according to crystal silicon solar batteries
(area) is set, and is generally set between 130~160mm.Wherein, the distance between two adjacent main gate lines 10 are typically set at
The quantity of battery size divided by main gate line 10, the main gate line 10 most kept to the side with a distance from battery edge from being typically set at battery size
Divided by 2 times of the quantity of main gate line 10.The preparation method provided using the present embodiment, 4~6 are set in the quantity of main gate line 10
When advantage it is more obvious, the solar cell of particularly current 5 main gate lines 10 of use developed.In such as Fig. 7, this reality
Applying the front electrode in example includes 5 main gate lines 10, and the width of main gate line 10 is 0.8mm.The width of main gate line is needed according to master
The quantity of grid line 10 is controlled to design by the figure of screen printing screens, may be set in 0.68~1.0mm model
In enclosing.
Wherein, the quantity of the secondary grid line 20 and length need to be set according to the size (area) of crystal silicon solar batteries.
The preparation method provided using the present embodiment, the quantity of secondary grid line 20 generally can be set as 100~110, secondary grid line 20
Width can be 0.20~0.25 μm, be controlled by the figure of steel mesh printing screen plate.Specific in the present embodiment, the secondary grid
The quantity of line 20 is 106 (the secondary grid line 20 that partial amt is illustrate only in Fig. 7), and the width of the secondary grid line 20 is 0.25 μ
M, the spacing of adjacent two secondary grid lines 20 is 1.7213mm.
Wherein, as shown in fig. 7, the main gate line 10 includes the multiple solid part 10a being sequentially connected and multiple hollow-out parts
10b, the solid part 10a and the hollow-out parts 10b alternate intervals are set.Solid part 10a is mainly used in the welding of later stage battery,
Using solid construction so that bonding area is big, pulling-out force is big between welding and battery, welds more firm；Hollow-out parts 10b can subtract
Small shading-area and reduction silver paste consumption.
In summary, the preparation method of the crystal silicon solar batteries front electrode provided in the embodiment of the present invention, front electricity
The preparation of pole is divided to two typographies, prepares to form main gate line by silk-screen printing technique, and shape is prepared by steel mesh typography
Into secondary grid line.Due in steel mesh printing screen plate used in steel mesh typography, not having wire and wire in its figure
Node, the secondary grid line that width is small, density is big is prepared using this kind of half tone, and electrode slurry can pass through steel mesh printing screen plate,
Its secondary grid line prepared has bigger depth-width ratio, and the height more even uniform of secondary grid line, finally gives just
What face electrode can not only reduce grid line resistance brings power loss, turns while optical loss can also be reduced so as to improve photoelectricity
Change efficiency.Also, the front electrode prepared using this method, the consumption of electrode slurry can save 10% or so, reduction
Production cost.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (1)
1. a kind of preparation method of crystal silicon solar batteries front electrode, including main gate line and secondary grid are formed on the solar cell
The step of line, it is characterised in that this method includes：
S101, provide one there are the screen printing screens of main grid line graph, pass through silk-screen printing technique shape on the solar cell
Into main gate line；The screen printing screens are arranged on the solar cell first, then in the screen printing screens
Upper addition electrode slurry, finally moving scraper makes electrode slurry pass through the screen printing screens, on the solar cell
Form the main gate line；In silk-screen printing technique, the translational speed of scraper is 180~220mm/s, scraper pressure is 7~
9kgf, the off-network spacing of screen printing screens is 1.25~1.35mm；The quantity of the main gate line is 5, the main gate line
Width is 0.8mm, and the main gate line includes the multiple solid parts and multiple hollow-out parts that are sequentially connected, the solid part and described is engraved
Empty portion's alternate intervals are set；
S102, offer one have the steel mesh printing screen plate of secondary grid line figure, are formed by steel mesh typography on solar cell
Secondary grid line；The steel mesh printing screen plate is arranged on the solar cell first, then on the steel mesh printing screen plate
Electrode slurry is added, finally moving scraper makes electrode slurry pass through the steel mesh printing screen plate, the shape on the solar cell
Into the secondary grid line；In steel mesh typography, the translational speed of scraper is 220~240mm/s, scraper pressure is 4.5~
5.5kgf, the off-network spacing of steel mesh printing screen plate is 1.48~1.55mm；The quantity of the secondary grid line is 106, the secondary grid
The width of line is 0.25 μm, and the spacing of adjacent two secondary grid lines is 1.7213mm；
S103, the solar cell for being formed with the main gate line and secondary grid line is sintered.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510861174.1A CN105514183B (en) | 2015-11-30 | 2015-11-30 | A kind of preparation method of crystal silicon solar batteries front electrode |
| PCT/CN2016/089964 WO2017092365A1 (en) | 2015-11-30 | 2016-07-14 | Preparation method for front side electrode of crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510861174.1A CN105514183B (en) | 2015-11-30 | 2015-11-30 | A kind of preparation method of crystal silicon solar batteries front electrode |
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| Publication Number | Publication Date |
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| CN105514183A CN105514183A (en) | 2016-04-20 |
| CN105514183B true CN105514183B (en) | 2017-10-17 |
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| WO (1) | WO2017092365A1 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514183B (en) * | 2015-11-30 | 2017-10-17 | 黄河水电光伏产业技术有限公司 | A kind of preparation method of crystal silicon solar batteries front electrode |
| CN107662401A (en) * | 2016-07-31 | 2018-02-06 | 青岛瑞元鼎泰新能源科技有限公司 | A kind of equipment and technique for printing dereliction grid cell piece front electrode |
| CN106024996B (en) * | 2016-08-04 | 2017-11-07 | 宁波尤利卡太阳能科技发展有限公司 | Crystal-silicon solar cell front electrode printing process |
| CN107685533A (en) * | 2016-08-05 | 2018-02-13 | 青岛瑞元鼎泰新能源科技有限公司 | A kind of double net half tone device and method for printing dereliction grid cell piece front electrode |
| CN107791664A (en) * | 2016-09-06 | 2018-03-13 | 青岛瑞元鼎泰新能源科技有限公司 | A kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode |
| CN107146825A (en) * | 2017-06-22 | 2017-09-08 | 通威太阳能（合肥）有限公司 | Method for step-by-step printing of polycrystalline cell piece and step-by-step printing of polycrystalline cell piece |
| CN108447920A (en) * | 2018-04-11 | 2018-08-24 | 张家港国龙光伏科技有限公司 | High conversion secondary printing solar panel |
| CN108773219A (en) * | 2018-04-18 | 2018-11-09 | 中建材浚鑫科技有限公司 | A kind of Novel mesh-free knot screen printing process |
| CN108365027A (en) * | 2018-04-24 | 2018-08-03 | 通威太阳能（合肥）有限公司 | P-type crystalline silicon double-sided solar cell and cell manufacturing method |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820022A (en) * | 2009-12-25 | 2010-09-01 | 欧贝黎新能源科技股份有限公司 | Printing stencil for manufacturing crystalline silicon solar battery electrode |
| CN102136308A (en) * | 2010-11-23 | 2011-07-27 | 湖南威能新材料科技有限公司 | Organic carrier for silver paste and preparation method thereof as well as silver paste containing organic carrier and solar cell manufactured from silver paste |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070251570A1 (en) * | 2002-03-29 | 2007-11-01 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
| CN102479883A (en) * | 2009-11-27 | 2012-05-30 | 无锡尚德太阳能电力有限公司 | Method for forming positive electrode of solar cell |
| CN202293614U (en) * | 2011-09-28 | 2012-07-04 | 中节能太阳能科技（镇江）有限公司 | Positive silver screen printing plate of screen printing crystalline silicon solar cell |
| CN102555562A (en) * | 2011-12-28 | 2012-07-11 | 晶澳（扬州）太阳能科技有限公司 | Printing process of solar battery plate |
| CN102945866A (en) * | 2012-11-27 | 2013-02-27 | 英利能源（中国）有限公司 | N type solar cell, printing method thereof and printing silk screen |
| CN105514183B (en) * | 2015-11-30 | 2017-10-17 | 黄河水电光伏产业技术有限公司 | A kind of preparation method of crystal silicon solar batteries front electrode |
-
2015
- 2015-11-30 CN CN201510861174.1A patent/CN105514183B/en active Active
-
2016
- 2016-07-14 WO PCT/CN2016/089964 patent/WO2017092365A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820022A (en) * | 2009-12-25 | 2010-09-01 | 欧贝黎新能源科技股份有限公司 | Printing stencil for manufacturing crystalline silicon solar battery electrode |
| CN102136308A (en) * | 2010-11-23 | 2011-07-27 | 湖南威能新材料科技有限公司 | Organic carrier for silver paste and preparation method thereof as well as silver paste containing organic carrier and solar cell manufactured from silver paste |
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| CN105514183A (en) | 2016-04-20 |
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