CN108231640A - 基板处理装置 - Google Patents
基板处理装置 Download PDFInfo
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- CN108231640A CN108231640A CN201711284838.8A CN201711284838A CN108231640A CN 108231640 A CN108231640 A CN 108231640A CN 201711284838 A CN201711284838 A CN 201711284838A CN 108231640 A CN108231640 A CN 108231640A
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Abstract
本发明提供一种基板处理装置。即使利用批量式的基板处理装置对翘曲了的基板进行处理时也能够进行多个基板的统一输送。基板处理装置具有:载置台,其载置基板收纳容器,该基板收纳容器收纳有从该基板处理装置的外部接收的多个基板;单张式的位置调整部,其对基板的旋转方向位置进行逐张调整;第1基板输送机构,其进行如下操作:将收纳到基板收纳容器的多个基板中的1张基板取出而向位置调整部输送的操作;在位置调整部将旋转方向位置调整后的该1张基板向所述基板收纳容器输送的操作;第2基板输送机构,其将被第1基板输送机构输送并收纳到基板收纳容器的、旋转方向位置被调整后的多个基板从基板收纳容器统一取出。
Description
技术领域
本发明涉及对多个基板进行成批处理的基板处理装置。
背景技术
近年来,3DNAND等具有多层层叠构造的集成电路被实际应用化。在其制造工序中,发现在与对位用的凹口具有特定的位置关系的情况下产生半导体晶圆(基板)的比较大的翘曲这样的现象。
作为批量式的基板处理装置,存在例如清洗装置,在利用基板引导件等基板保持器具以将多张例如50张基板以立起姿势沿着水平方向排列的状态保持着的状态下,通过使该基板浸渍于贮存到处理槽的处理液中,来进行处理。在批量式的基板处理装置中,为了使生产率提高,将各25张以有规律的间距收纳于两个FOUP(基板收纳容器)的基板组合,而形成由50张以半间距排列的基板构成的批次,将其统一地进行液处理(参照例如专利文献1)。
在以批量式的基板处理装置对上述的翘曲了的基板进行管理的情况下,在要将基板收纳容器内的基板统一取出时,无法将基板输送装置的臂***相邻基板之间,有可能无法进行基板的取出。
现有技术文献
专利文献
专利文献1:日本特开2015-056631号公报
发明内容
发明要解决的问题
本发明目的在于提供一种即使是以批量式的基板处理装置对翘曲了的基板进行管理时、也能够进行多个基板的统一输送的技术。
用于解决问题的方案
根据本发明的一实施方式,可提供一种基板处理装置,其具备对多个基板进行成批处理的处理部,该基板处理装置具有:载置台,其载置基板收纳容器,该基板收纳容器收纳有从该基板处理装置的外部接收的多个基板;单张式的位置调整部,其对基板的旋转方向位置进行逐张调整;第1基板输送机构,其进行如下操作:将收纳到所述基板收纳容器的多个基板中的1张基板取出而向所述位置调整部输送的操作;将旋转方向位置被所述位置调整部调整后的该1张基板向所述基板收纳容器输送的操作;第2基板输送机构,其将被所述第1基板输送机构输送且收纳到所述基板收纳容器的旋转方向位置被调整后的所述多个基板从所述基板收纳容器统一取出。
发明的效果
根据本发明,即使基板翘曲、也能够在从基板收纳容器取出基板之际容易地统一取出。
附图说明
图1是表示本发明的基板处理装置的一实施方式的批量式的基板液处理***的概略立体图。
图2是图1所示的基板液处理***的概略俯视图。
图3是对前开式晶圆传送盒管理部和晶圆管理部中的前开式晶圆传送盒和晶圆的输送进行说明的概略立体图。
图4是说明凹口***的结构的概略剖视图。
图5是对晶圆排列机构的结构和作用进行说明的概略侧视图。
图6是对晶圆排列机构的结构和作用进行说明的概略侧视图。
图7是对化学溶液槽及其附属的机构的结构进行说明的概略剖视图。
图8是说明化学溶液槽内的晶圆的状态的概略侧视图。
图9是说明在晶圆产生的翘曲的概略俯视图。
图10是说明晶圆的取出的概略俯视图。
附图标记说明
W、基板(晶圆);4、处理部;12、容器输送机构(前开式晶圆传送盒输送装置12);13、保管部(前开式晶圆传送盒保持构件);15A、第2载置台(晶圆出入台);15B、第1载置台(晶圆出入台);19、第2基板输送机构(统一输送装置);20、批次形成部;60、第1基板输送机构(单张输送装置);70、位置调整部(凹口***)。
具体实施方式
以下,参照附图对本发明的实施方式进行说明。
如图1和图2所示,本发明的基板处理装置的一实施方式的批量式的基板液处理***1主要大致分成输入输出部(2、3)和对晶圆W(基板)进行成批处理(液处理)的处理部4。输入输出部具有以收纳晶圆W的前开式晶圆传送盒F为单位对晶圆W进行管理的前开式晶圆传送盒管理部2;对从前开式晶圆传送盒F(基板收纳容器、Front Opening Unified Pod)取出来的晶圆W进行管理的晶圆管理部3。
在前开式晶圆传送盒管理部2中,主要进行如下操作:从该基板液处理***1的外部接收前开式晶圆传送盒F和向外部交出前开式晶圆传送盒F;收纳有晶圆W的前开式晶圆传送盒F以及空的前开式晶圆传送盒F的保管。
在晶圆管理部3中,主要进行如下操作:从前开式晶圆传送盒F取出晶圆W;设为适于利用处理部4对取出来的晶圆W进行成批处理的排列状态;设为适于将被处理部4进行了成批处理的晶圆W收纳于前开式晶圆传送盒F的排列状态;然后将晶圆收纳于前开式晶圆传送盒F。此外,在此“排列状态”是包括晶圆W的姿势、晶圆W彼此的间隔、晶圆的排列方向中的至少一个的概念。
也就是说,在输入输出部(2、3)中,进行从自该基板液处理***1的外部接收前开式晶圆传送盒F到适于利用处理部4对晶圆W进行成批处理的排列状态的操作及其反向操作。
在前开式晶圆传送盒F内,多个(例如25张)晶圆W以水平姿势沿着铅垂方向相互隔开预定的间隔(普通间距)地被收纳。在前开式晶圆传送盒F的一侧面形成有晶圆W的输入输出用的开口,该开口能够通过安装固定盖体(未图示)来封闭。此外,在以下的说明中,以在1个前开式晶圆传送盒F收纳25张晶圆W的前提进行说明。也就是说,收纳于两个前开式晶圆传送盒F的晶圆的总数是50张,50张晶圆W形成1个批次(处理批次)。
前开式晶圆传送盒管理部2具有:前开式晶圆传送盒输入输出台5,其用于载置前开式晶圆传送盒F;前开式晶圆传送盒存放部6,其保管前开式晶圆传送盒F;前开式晶圆传送盒输送装置12(容器输送机构),其输送前开式晶圆传送盒。
前开式晶圆传送盒存放部6具备能够保持前开式晶圆传送盒F的多个前开式晶圆传送盒保持构件13。前开式晶圆传送盒保持构件13在前开式晶圆传送盒输送装置12的输送区域的两侧配置成多层(或者多列多层)。前开式晶圆传送盒存放部6即保管部将收纳有处理前的晶圆W的前开式晶圆传送盒F暂时保管,另外,将取出了晶圆W的空的前开式晶圆传送盒F暂时保管。
前开式晶圆传送盒存放部6与晶圆管理部3之间被分隔壁16分隔开。在分隔壁16呈上下两层(图2中仅看得见上侧的窗16A)形成有两个窗16A、16B。在前开式晶圆传送盒存放部,与窗16A,16B相邻地分别设置有晶圆出入台15A(第2载置台)和晶圆出入台15B(第1载置台)(图2中仅看得见上侧的晶圆出入台15A)。能够以前开式晶圆传送盒F的盖体与所对应的窗16A、16B面对的方式将前开式晶圆传送盒F载置于晶圆出入台15A、15B。
在晶圆出入台15A,15B各自的附近分别设置有用于进行所载置的前开式晶圆传送盒F的盖体的开闭的盖体开闭机构17(图2中仅看得见上侧的盖体开闭机构17;图3中,省略图示)。
前开式晶圆传送盒输送装置12由多关节输送机器人构成,由支承臂12a支承前开式晶圆传送盒F而进行前开式晶圆传送盒F的输送。前开式晶圆传送盒输送装置12能够沿着X方向(水平方向)、Y方向(水平方向)、Z方向(铅垂方向)移动,能够在前开式晶圆传送盒输入输出台5、前开式晶圆传送盒保持构件13和晶圆出入台15A、15B之间输送前开式晶圆传送盒F。
在晶圆管理部3,在窗16A、16B各自的附近配设有对前开式晶圆传送盒F内的晶圆W的收纳状态(张数、跳槽(日文:ジャンプスロット)的有无等)进行检查的晶圆检查装置18(图2中仅看得见上侧的晶圆检查装置18)。
在晶圆管理部3设置有统一输送装置19(第2基板输送机构)、单张输送装置60(第1基板输送机构)、凹口***(位置调整部)70、以及批次形成部20。凹口***70设置于晶圆出入台15A、15B的更下方。由于设置凹口***70,因此,也能够视作晶圆管理部3朝向前开式晶圆传送盒管理部2的晶圆出入台15B的下方伸出。
统一输送装置19在晶圆出入台15A上的前开式晶圆传送盒F与批次形成部20之间进行晶圆W的输送。统一输送装置19由多轴臂机器人构成,在其顶端具有晶圆保持臂19a。晶圆保持臂19a构成为,能够以前开式晶圆传送盒F内的晶圆W的排列间距即普通间距(例如10mm)同时保持25张晶圆W。晶圆保持臂19a不使所保持的晶圆W落下,能够在三维空间内采取任意的位置和姿势。
单张输送装置60在晶圆出入台15B上的前开式晶圆传送盒F与凹口***70之间逐张进行晶圆W的输送。如图3所示,单张输送装置60具有能沿着铅垂方向移动的移动体61和能相对于移动体61沿着前后方向彼此独立地进退的晶圆保持臂62、63。
在一个空的晶圆保持臂62从凹口***70取掉晶圆W之后,支承有另一晶圆W的另一晶圆保持臂63能够立即进行将该另一晶圆W置于凹口***70的操作(对于前开式晶圆传送盒F也是同样的)。也就是说,单张输送装置60在晶圆出入台15B上的前开式晶圆传送盒F与凹口***70之间移动时必定持有1张晶圆,由此,缩短了为了由凹口***70进行晶圆W的定位所需要的时间(在此是晶圆W的输送时间)。
如在图4中概略地表示那样,凹口***70具有对晶圆W的下表面中央部进行真空吸附而使晶圆W绕铅垂轴线旋转的旋转卡盘71、隔着晶圆W的周缘部相对配置的线激光传感器(检测光照射部兼受光部)72和反射板73。凹口***70基于在从线激光传感器72的光照射部射出之后被反射板73反射而向线激光传感器72的受光部入射的激光的光量变化对凹口N的位置进行检测,使旋转卡盘71旋转,以使凹口N位于指定好的角度位置。在该状态下从单张输送装置60取出晶圆W。
在前开式晶圆传送盒F的内部,多个张晶圆W隔开预定的间隔(在本实施方式中,普通间距)而平行地排列,以水平姿势收容。另一方面,统一输送装置19通过使多个晶圆保持臂19a沿着晶圆W从晶圆W的外周外方朝向中央部直线状移动,将各晶圆保持臂19a从晶圆W与晶圆W之间的间隙朝向晶圆W的中央部***。通过使***后的晶圆保持臂19a朝向晶圆W移动而晶圆W被晶圆保持臂19a支承。在如此排列好的晶圆W中,在晶圆W是平坦的情况下,间隔被维持恒定,不与晶圆W碰撞就能够顺利地将晶圆保持臂19a***晶圆W与晶圆W之间。
不过,在翘曲较大的晶圆W以随机的朝向收纳到前开式晶圆传送盒F的情况下,有时外周端位于部分地(局部地)下翘的位置的晶圆W、外周端位于部分地(局部地)上翘的位置的晶圆W混在一起。在这样的前开式晶圆传送盒F中,若沿着位于下翘的位置的晶圆W使多个晶圆保持臂19a从晶圆W的外周外方朝向中央部直线状移动,则也存在特别是位于上翘的位置的晶圆W与晶圆保持臂19a的一部分就接触(碰撞)、无法同时取出全部的晶圆W的情况。因此,在本实施方式中,采用了利用逐张输送而不产生上述那样的碰撞的问题的单张输送装置60和图4所示的方式的凹口***70。使用图9和图10来随后叙述这点的详细情况。
晶圆管理部3内的批次形成部20是为了进行批次(是指要被统一处理的50张晶圆W的组)的形成和分解、从晶圆管理部3向处理部4的晶圆W的输出、以及从处理部4向晶圆管理部3的晶圆W的输入而设置的。批次形成部20具有进行批次的形成和从晶圆管理部3向处理部4的晶圆W的输出的第1区域20a、进行从处理部4向晶圆管理部3的晶圆W的输入和批次的分解的第2区域20b。
在第1区域20a和第2区域20b分别设置有第1排列机构21a和第2排列机构21b。第1排列机构21a将从统一输送装置19供给来的以普通间距排列好的25张处理前的晶圆W(第1晶圆)和另外25张处理前的晶圆W(第2晶圆)组合而形成由以半间距(例如5mm)排列好的50张晶圆W构成的批次。第2排列机构21b将以半间距排列好的50张处理后的晶圆W分解成以普通间距排列好的25张第1晶圆W的组和25张第2晶圆W的组。
第1排列机构21a和第2排列机构21b均具有相同的构造。如图5和图6所示,各排列机构21a、21b具有沿着垂直方向延伸的引导件210、能沿着引导件210升降的晶圆手211、以及固定到引导件210的晶圆保持件212。晶圆手211构成为能够以半间距保持50张晶圆。晶圆保持件212构成为,能以普通间距保持25张晶圆W,且晶圆手211能够沿着上下方向通过。
基板液处理***1还具备在晶圆管理部3与处理部4之间输送晶圆W的晶圆输送装置22。晶圆输送装置22具有3根卡盘杆22a,在各卡盘杆22a以半间距形成有50条(或者51~52条)晶圆保持槽。因而,晶圆输送装置22能够将50张晶圆W以立起姿势(晶圆的面沿着铅垂方向的姿势)以半间距保持为沿着水平方向排列好的状态。晶圆输送装置22能沿着从晶圆管理部3向处理部4水平地延伸的导轨23在图2中沿着X方向(水平方向)移动。
处理部4具备液处理单元7和干燥单元8。晶圆输送装置22沿着导轨23移动,在液处理单元7与干燥单元8之间进行晶圆W的交接。
如图2所示,液处理单元7从距晶圆管理部3较远的一侧依次配置有第1化学溶液槽31、第1水洗槽32、第2化学溶液槽33、第2水洗槽34、第3化学溶液槽35以及第3水洗槽36。在这些槽31、32、33、34、35、36分别设置有晶圆保持部37a、37b、37c、37d、37e、37f。
晶圆保持部37a~37f彼此具有相同的结构,分别能够将50张晶圆W以立起姿势以半间距保持为沿着水平方向排列的状态(参照图7和图8)。晶圆保持部37a~37f能够利用未图示的各升降机构沿着铅垂方向移动,由此,能够在其与晶圆输送装置22之间将以立起姿势以半间距沿着水平方向排列好的50张晶圆W统一交接,另外,能够使所保持的晶圆W浸渍于贮存到所对应的槽31~36内的处理液中。
在第1化学溶液槽31、第2化学溶液槽33、第3化学溶液槽35贮存有不同种类的化学溶液。作为化学溶液,想到用于进行有机性污垢去除、表面金属杂质去除的被加热成130℃左右的SPM液、用于去除微粒等附着物的SC-1液(氨、过氧化氢以及水的混合溶液)、用于对在晶圆W的表面形成的氧化膜进行湿蚀刻的蚀刻液、例如稀氢氟酸、或氢氟酸和氟化铵的混合物(缓冲氢氟酸(BHF))、用于进行硅氮化膜的湿蚀刻的被加热成160℃~180℃左右的磷酸水溶液(H3PO4aq)等各种各样的化学溶液。
第1水洗槽32、第2水洗槽34和第3水洗槽36分别用于利用由第1化学溶液槽31、第2化学溶液槽33和第3化学溶液槽35进行的液处理将附着到晶圆W的化学溶液去除,使用例如溢流冲洗、快速倾卸冲洗等各种水洗方法。
第1化学溶液槽31、第1水洗槽32、第2化学溶液槽33、第2水洗槽34、第3化学溶液槽35和第3水洗槽36以及附属于这些槽的机构的结构彼此大致相同。参照图7和图8代表性地对第1化学溶液槽31和附属于其的机构的结构的一个例子简单地进行说明。第1化学溶液槽31具有内槽311和外槽312。在内槽311充满有化学溶液(处理液)。以立起姿势沿着图7的纸面垂直方向保持有以半间距排列好的50张晶圆W的晶圆保持部37a下降而位于内槽311内的化学溶液中。化学溶液被从喷嘴313朝向晶圆W喷射,与此相伴,内槽311内的化学溶液向外槽312溢流。溢流出来的化学溶液经由设置有泵314和过滤器315的循环管线316被再次向喷嘴313输送。晶圆保持部37a具有安装到基座372a的多个例如4根晶圆保持棒371a。在各晶圆保持棒371a形成有以半间距排列好的50条(或51~52条)晶圆保持槽373a。晶圆W的周缘部被***各晶圆保持棒371a的晶圆保持槽373a内。
在干燥单元8配设有水洗槽24和对晶圆输送装置22的卡盘杆22a进行清洗的卡盘清洗机构26。在水洗槽24的上部设置有使用例如异丙醇(IPA)蒸气等干燥促进气体来对晶圆W进行干燥的干燥室(未图示)。在干燥单元8还设置有具有与前述的晶圆保持部37a~37f同样的结构的晶圆保持部25。晶圆保持部25能够在其与晶圆输送装置22之间进行晶圆W的交接,另外,能够通过升降使晶圆W在水洗槽24与干燥室之间移动。
如在图1中概略地表示那样,在前开式晶圆传送盒管理部2的外壳内设置有控制部40。该控制部40具有对构成基板液处理***1的各种机构、单元、器件等进行控制的微处理器(MPU)的控制器41、用户接口42、以及存储有处理所需要的信息的存储部43。
用户接口42和存储部43与控制器41连接。用户接口42具备操作者为了对基板液处理***1的各构成部进行管理而进行指令的输入操作等的键盘、使基板液处理***1的各构成部的运转状况可视化地显示的显示器。在存储部43储存有用于在控制器41的控制下实现由基板液处理***1执行的各种处理的控制程序、用于根据处理条件而使基板液处理***1的各构成部执行预定的处理的控制程序即制程。制程等控制程序存储于存储部43中的存储介质。存储介质既可以是硬盘那样的固定介质,也可以是CDROM、DVD、闪存等移动性的介质。
接着,对基板液处理***1的动作进行说明。分别以水平姿势以普通间距收纳25张晶圆W的两个前开式晶圆传送盒F被外部的输送机载置于前开式晶圆传送盒输入输出台5。由收纳于这两个前开式晶圆传送盒的50张晶圆W形成批次。以下,在本说明书中,出于方便说明,将两个前开式晶圆传送盒F中的一者称为第1前开式晶圆传送盒F,将另一者称为第2前开式晶圆传送盒F,将收纳于第1前开式晶圆传送盒F的晶圆W称为第1晶圆W,将收纳于第2前开式晶圆传送盒F的晶圆W称为第2晶圆W。
前开式晶圆传送盒输入输出台5上的第1前开式晶圆传送盒F被前开式晶圆传送盒输送装置12向晶圆出入台15B输送(参照图3的箭头A1)。第1前开式晶圆传送盒F也有时被暂且保管到前开式晶圆传送盒保持构件13之后向晶圆出入台15B输送。盖体开闭机构17从晶圆出入台15B上的第1前开式晶圆传送盒F拆卸盖体,利用晶圆检查装置18进行晶圆W收纳状态(张数、跳槽等)的检查。
之后,单张输送装置60将收纳于晶圆出入台15B上的第1前开式晶圆传送盒F的第1晶圆W逐张取出而向凹口***70输入(参照图3的箭头A2),将第1晶圆W的旋转方向位置调整成所指定好的位置。具体而言,使晶圆W的凹口N(参照图9)位于所指定的角度位置。之后,单张输送装置60使第1晶圆W返回晶圆出入台15B上的第1前开式晶圆传送盒F(参照图3的箭头A3)。第1前开式晶圆传送盒F内的全部的晶圆W的旋转方向位置调整一结束,盖体开闭机构17就将盖体安装固定于第1前开式晶圆传送盒F,前开式晶圆传送盒输送装置12将收纳位置调整完毕的晶圆W的第1前开式晶圆传送盒F从晶圆出入台15B向晶圆出入台15A输送(参照图3的箭头A4)。
接着,在盖体开闭机构17A从晶圆出入台15A上的第1前开式晶圆传送盒F拆卸掉盖体之后,统一输送装置19的晶圆保持臂19a被***第1前开式晶圆传送盒F内,从第1前开式晶圆传送盒F取出25张水平姿势的第1晶圆W。统一输送装置19在将第1晶圆W转换成立起姿势之后交给第1排列机构21a的晶圆手211(参照图3的箭头A5)。此时,晶圆手211位于晶圆保持件212的下方(参照图5)。
针对第2前开式晶圆传送盒F,也以与上述同样的顺序载置于晶圆出入台15B,使用单张输送装置60以及凹口***70也对第2前开式晶圆传送盒F内的全部的第2晶圆W进行对位,之后,前开式晶圆传送盒输送装置12将第2前开式晶圆传送盒F从晶圆出入台15B向晶圆出入台15A输送。此外,既存在第2前开式晶圆传送盒F内的第2晶圆W的对位方向和第1前开式晶圆传送盒F内的第1晶圆W的对位方向相同的情况,也存在不同的情况(详细随后叙述)。
统一输送装置19也同样地从晶圆出入台15A上的第2前开式晶圆传送盒F取出25张晶圆W,将晶圆交给晶圆保持件212。接下来,使晶圆手211上升而使晶圆保持件212通过。在其通过时晶圆保持件212上的第2晶圆W被***晶圆手211上的第1晶圆W之间,并且被交给晶圆手211。由此,第1晶圆和第2晶圆交替地排列,晶圆手211以半间距保持50张晶圆W。也就是说,形成由以立起姿势以半间距沿着水平方向排列的50张晶圆W构成的批次。对于上述的动作,要参照图5和图6。
接着,在使晶圆输送装置22位于以半间距保持有50张晶圆W的第1排列机构21a的晶圆手211的正下方的位置的状态下,使晶圆手211下降,从而晶圆W从晶圆手211交给晶圆输送装置22。
盖体开闭机构17将盖体安装固定于取出晶圆W后的第1前开式晶圆传送盒F以及第2前开式晶圆传送盒F。空的第1前开式晶圆传送盒F以及第2前开式晶圆传送盒F被前开式晶圆传送盒输送装置12向前开式晶圆传送盒保持构件13输送,并被保管于前开式晶圆传送盒保持构件13。
此外,替代将第1前开式晶圆传送盒F或第2前开式晶圆传送盒F从晶圆出入台15B向晶圆出入台15A直接输送,也可以是,向前开式晶圆传送盒保持构件13输送而暂且由前开式晶圆传送盒保持构件13保管。在该情况下,作为一个例子,能够进行以下的输送控制。即,首先,直到第2前开式晶圆传送盒F的全部的晶圆W的对位结束为止将第1前开式晶圆传送盒F由前开式晶圆传送盒保持构件13暂时保持。并且,在第2前开式晶圆传送盒F的对位结束了之后,前开式晶圆传送盒输送装置12将第1前开式晶圆传送盒F从前开式晶圆传送盒保持构件13向晶圆出入台15A输送,统一输送装置19从第1前开式晶圆传送盒F取出25张水平姿势的第1晶圆W。然后,与此连续地,前开式晶圆传送盒输送装置12从晶圆出入台15B向晶圆出入台15A直接输送,同样地,统一输送装置19从第2前开式晶圆传送盒F取出25张水平姿势的第1晶圆W。
另外,作为另一个例子,能够进行以下的输送控制。即,首先,直到第2前开式晶圆传送盒F的全部的晶圆W的对位结束为止将第1前开式晶圆传送盒F由前开式晶圆传送盒保持构件13暂时保持。并且,在第2前开式晶圆传送盒F的对位结束了之后,第2前开式晶圆传送盒F也由前开式晶圆传送盒保持构件13暂时保持。在两个前开式晶圆传送盒F被前开式晶圆传送盒保持构件13保持了之后,前开式晶圆传送盒输送装置12将第1前开式晶圆传送盒F和第2前开式晶圆传送盒F从前开式晶圆传送盒保持构件13向晶圆出入台15A连续地输送,统一输送装置19从第1前开式晶圆传送盒F取出25张水平姿势的第1晶圆W,接着从第2前开式晶圆传送盒F取出25张水平姿势的第2晶圆W。
通过进行以上那样的控制,也能够在基板处理的安排上的除了应该进行批次形成、基板的液处理的时间以外的时间预先进行或者完成需要长时间的使用了凹口***70的晶圆W的对位动作,因此,能够使***整体上的基板处理的生产率提高。
晶圆输送装置22将50张晶圆W统一地向处理部4输送。晶圆输送装置22首先将晶圆W交给位于液处理单元7的第1化学溶液槽31的上方的晶圆保持部37a。晶圆保持部37a下降,使晶圆W浸渍到第1化学溶液槽31内的化学溶液中预定时间,之后上升而将晶圆W从第1化学溶液槽31提起,之后,将晶圆W交给晶圆输送装置22。接着,晶圆输送装置22将晶圆W交给位于第1水洗槽32的上方的晶圆保持部37b。晶圆保持部37b下降,使晶圆W浸渍到第1水洗槽32内的冲洗液中预定时间,之后上升而从第1水洗槽32提起,之后,将晶圆W交给晶圆输送装置22。之后,与上述同样地晶圆W被交给晶圆保持部37c而被浸渍于第2化学溶液槽33内的化学溶液中预定时间,之后,被返回晶圆输送装置22,接下来,被交给晶圆保持部37d而被浸渍于第2水洗槽34内的冲洗液中预定时间,之后,被返回晶圆输送装置22。而且,晶圆W被交给晶圆保持部37e而被浸渍于第3化学溶液槽35内的化学溶液中预定时间,之后,被返回晶圆输送装置22,接下来,被交给晶圆保持部37f而被浸渍于第3水洗槽36内的冲洗液中预定时间,被返回晶圆输送装置22。
无需在第1化学溶液槽31和第1水洗槽32的组、第2化学溶液槽33和第2水洗槽34的组、第3化学溶液槽35和第3水洗槽36的组中的全部的组中对晶圆W进行液处理,也可以是在所选择的任意的1个以上的组中进行液处理。此外,化学溶液槽和水洗槽的组数并不限定于3组,既可以是4组以上,也可以是两组以下。
晶圆输送装置22将在液处理单元7结束了液处理的晶圆W交给干燥单元8的晶圆保持部25。晶圆保持部25将晶圆W浸渍于水洗槽24而进行水洗,之后从水洗槽24提起,向位于水洗槽24的正上方的未图示的干燥室内输入。在干燥室内进行使用了IPA蒸气的干燥处理。
之后,晶圆输送装置22从干燥单元8的晶圆保持部25接收晶圆W,输送到批次形成部20的第2区域20b。接下来,第2排列机构21b的晶圆手211从晶圆输送装置22接收晶圆。在使晶圆手211下降的过程中,保持于晶圆手211的50张晶圆W中的25张第2晶圆W被交给晶圆保持件212。由此,成为25张第1晶圆W以普通间距保持到晶圆手211的状态,并且,成为25张第2晶圆W以普通间距保持到晶圆保持件212的状态。
空的第1前开式晶圆传送盒F被前开式晶圆传送盒输送装置12载置于晶圆出入台15A,盖体开闭机构17打开该第1前开式晶圆传送盒F的盖体。接下来,统一输送装置19从晶圆手211取出第1晶圆W,将第1晶圆W以水平姿势收纳于第1前开式晶圆传送盒F。之后,利用晶圆检查装置18A检查第1前开式晶圆传送盒F内的第1晶圆W的收纳状态,在检查结束后,第1前开式晶圆传送盒F的盖体被盖体开闭机构17A关闭。收纳有清洗处理后的第1晶圆W的第1前开式晶圆传送盒F被前开式晶圆传送盒输送装置12向前开式晶圆传送盒保持构件13中的一个输送,并被保持于此。
对晶圆保持件212上的第2晶圆W也进行与上述同样的动作。即,空的第2前开式晶圆传送盒F被前开式晶圆传送盒输送装置12载置于晶圆出入台15A,统一输送装置19将晶圆保持件212上的第2晶圆W收纳于第2前开式晶圆传送盒F,第2前开式晶圆传送盒F被前开式晶圆传送盒输送装置12向另一前开式晶圆传送盒保持构件13输送。通过以上步骤,针对形成一个处理批次(批次)的50张晶圆W的一系列的序列结束。收纳有处理完毕的晶圆的第1前开式晶圆传送盒F以及第2前开式晶圆传送盒F在适当的时刻经由前开式晶圆传送盒输入输出台5被从基板液处理***1输出。
图9是概略地表示在作为产生了翘曲的晶圆W的一个例子的形成有作为多层器件的3D-NAND的晶圆W产生的翘曲的倾向的图。在图9中以虚线表示等高线,赋予等高线的数值概略地表示以晶圆W的中心部的高度为零时的各位置的高度水平。通过发明人等的研究,可知:只要在晶圆W上形成的器件构造相同,就以凹口N的位置为基准产生相同的翘曲(高度)的分布。
在具有翘曲的晶圆W以凹口N的位置随机的状态收纳到前开式晶圆传送盒F的情况下,存在统一输送装置19从前开式晶圆传送盒F不一次性取出50张晶圆W的情况。为了解决该问题,首先,使收纳于前开式晶圆传送盒F内的晶圆W的凹口N的位置一致是有效的。由此,只要各晶圆W的翘曲的倾向相同,晶圆W面内的与相邻晶圆W之间的距离就大致均等。另外,以位于统一输送装置19的晶圆保持臂19a的向前开式晶圆传送盒F内***时的移动路径的晶圆W的投影面积(从晶圆保持臂19a的移动方向观察到的投影面积(翘曲若较大,则投影面积变大))变小的方式调整晶圆W的旋转方向位置也是有效的。另外,使位于统一输送装置19的晶圆保持臂19a的第1手指19a-1和第2手指19a-2(参照图10)的向前开式晶圆传送盒F内***时的移动路径的晶圆W的高度均等也是有效的。
另外,若以半间距排列具有较大翘曲的晶圆W,则产生晶圆W的面内的与相邻晶圆W之间的间隔变得非常小的部位。在那样的部位,处理液不向相邻的晶圆间的间隙充分地流通,有可能有损处理结果的面内均匀性。
在将收纳到第1前开式晶圆传送盒F1的25张第1晶圆W和收纳到第2前开式晶圆传送盒F2的25张第2晶圆W组合而形成由50张晶圆W构成的批次的情况下,能存在以下的排列。
(排列1)以50张晶圆W的图案形成面全部朝向相同的方向的方式晶圆W被排列(被称为面对背,“FACE TO BACK”或背对面,“BACK TO FACE”的)。
(排列2)以使图案形成面彼此(或者非图案形成面彼此)相对的晶圆W对形成25对的方式晶圆W被排列(被称为面对面,“FACE TO FACE”(或者背靠背,“BACK TO BACK”))。
在排列1的情况下,通过使全部的晶圆W的凹口N的角度位置相同,能够使晶圆W的面内的与相邻晶圆W之间的间隔大致均匀是显而易见的。通过如此设置,能够防止有损处理结果的面内均匀性。也就是说,在排列1的情况下,也可以仅考虑由统一输送装置19进行的从前开式晶圆传送盒F取出晶圆W的取出容易性而决定凹口N的朝向。
由于图9所示的晶圆W的翘曲的倾向,在排列2的情况下,通过使第1晶圆W的凹口N与第2晶圆W的凹口N的角度位置错开90度,能够使晶圆W的面内的与相邻晶圆W之间的间隔的分布均匀地靠近是显而易见。通过如此设置,能够提高处理结果的面内均匀性。另外,也能够防止在批次形成后的输送或处理中晶圆W彼此接触。
此外,在排列2的情况下,优选的是,利用凹口***70进行旋转方向位置的调整,以便在进行例如液处理时全部的第1晶圆W的凹口N位于从朝向正上方的角度位置顺时针旋转了45度的角度位置、且全部的第2晶圆W的凹口N位于从朝向正上方的角度位置逆时针旋转了45度的角度位置。通过如此设置,能够兼顾由统一输送装置19进行的从前开式晶圆传送盒F取出晶圆W的取出容易性和处理结果的面内均匀性。
控制器41也可以基于储存到存储部43的制程、或者从主计算机发送来的制程全自动地进行凹口***70对第1晶圆W和第2晶圆W的旋转方向位置的调整(凹口N的朝向的调整)。取而代之,操作者也可以经由用户接口42指定第1晶圆W和第2晶圆W的旋转方向位置。
不过,存在具有从上述的基板处理***1的结构去除掉单张输送装置60和凹口***70而成的结构的现有的装置。通过将这样的现有的装置与具备单张输送装置60和凹口***70的箱型的单元连结,也可以改造成与上述的基板处理***1同样的装置。
在上述实施方式中,基板是半导体晶圆W,但并不限于此,只要是具有能利用凹口***70进行定位的圆盘形的形状、且翘曲的分布与凹口具有特定的位置关系的基板即可。
Claims (6)
1.一种基板处理装置,其具备对多个基板进行成批处理的处理部,该基板处理装置具有:
载置台,其载置基板收纳容器,该基板收纳容器收纳有从该基板处理装置的外部接收的多个基板;
单张式的位置调整部,其对基板的旋转方向位置进行逐张调整;
第1基板输送机构,其进行如下操作:将收纳到所述基板收纳容器的多个基板中的1张基板取出而向所述位置调整部输送的操作;将在所述位置调整部旋转方向位置被调整后的该1张基板向所述基板收纳容器输送的操作;
第2基板输送机构,其将被所述第1基板输送机构输送并收纳到所述基板收纳容器的旋转方向位置被调整后的所述多个基板从所述基板收纳容器统一取出。
2.根据权利要求1所述的基板处理装置,其中,
所述载置台包括在所述第1基板输送机构从所述基板收纳容器取出所述基板时载置所述基板收纳容器的第1载置台,
所述第1载置台与所述位置调整部沿着上下方向排列。
3.根据权利要求2所述的基板处理装置,其中,
所述载置台包括在所述第2基板输送机构从所述基板收纳容器取出所述基板时载置所述基板收纳容器的第2载置台,
该基板处理装置还具备在所述第1载置台与所述第2载置台之间输送所述基板收纳容器的容器输送机构。
4.根据权利要求3所述的基板处理装置,其中,
所述第1载置台与所述第2载置台沿着上下方向排列。
5.根据权利要求3或4所述的基板处理装置,其中,
该基板处理装置还具备将收纳有旋转方向位置被调整后的所述多个基板的基板收纳容器暂时保管的保管部,
在1个基板收纳容器被保管于所述保管部而针对其下一个基板收纳容器、所述多个基板的旋转方向位置被调整了之后,所述容器输送机构将所述基板收纳容器从所述保管部向所述第2载置台输送,所述第2基板输送机构从输送来的所述基板收纳容器将所述多个基板统一取出,
所述容器输送机构连续地将所述下一个基板收纳容器从所述第1载置台向所述第2载置台输送,所述第2基板输送机构从输送来的所述基板收纳容器将所述多个基板统一取出。
6.根据权利要求3或4所述的基板处理装置,其中,
该基板处理装置还具备将收纳有旋转方向位置被调整后的所述多个基板的基板收纳容器暂时保管的保管部,
在两个基板收纳容器被保管到所述保管部了之后,所述容器输送机构将所述两个基板收纳容器从所述保管部向所述第2载置台连续地输送,所述第2基板输送机构针对输送来的所述两个基板收纳容器连续地进行从所述基板收纳容器将所述多个基板统一取出的动作。
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JP7349240B2 (ja) * | 2018-10-05 | 2023-09-22 | 東京エレクトロン株式会社 | 基板倉庫及び基板検査方法 |
KR20200102612A (ko) * | 2019-02-21 | 2020-09-01 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP7336956B2 (ja) * | 2019-10-10 | 2023-09-01 | 東京エレクトロン株式会社 | 基板処理システム、及び基板処理方法 |
JP7412137B2 (ja) * | 2019-11-06 | 2024-01-12 | 東京エレクトロン株式会社 | 基板処理装置及び基板収納容器保管方法 |
JP2022081065A (ja) * | 2020-11-19 | 2022-05-31 | 東京エレクトロン株式会社 | 基板処理装置、及び基板処理方法 |
CN113299586B (zh) * | 2021-07-28 | 2021-10-19 | 四川通妙科技有限公司 | 一种芯片晶圆暂存装置及芯片晶圆暂存取件方法 |
CN115020308B (zh) * | 2022-08-08 | 2022-11-22 | 上海果纳半导体技术有限公司武汉分公司 | 晶圆传输装置、设备平台***及其晶圆传输方法 |
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CN108231640B (zh) | 2023-06-13 |
KR20180066841A (ko) | 2018-06-19 |
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US10818532B2 (en) | 2020-10-27 |
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