CN1082253A - The method for making of passivated double polar body crystal grain of cylinder glass - Google Patents
The method for making of passivated double polar body crystal grain of cylinder glass Download PDFInfo
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- CN1082253A CN1082253A CN 93107505 CN93107505A CN1082253A CN 1082253 A CN1082253 A CN 1082253A CN 93107505 CN93107505 CN 93107505 CN 93107505 A CN93107505 A CN 93107505A CN 1082253 A CN1082253 A CN 1082253A
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Abstract
The present invention relates to a kind of method for making of passivated double polar body crystal grain of cylinder glass.The operation sequence of method for making of the present invention is: diffusion wafer lining photoresist, exposure and development, etched trench, removal photoresist, the cleaning of grid layer, the lining of glass paste grid layer, high temp glassization, nickel plating and sintering, liner and round iron sheet location gummed, sandblast and separation circle crystal grain promptly obtain passivated double polar body crystal grain of cylinder glass.The inventive method need not hindered plane of crystal through the immersion of multiple repeatedly chemical agent, obtains stable, the circular diode crystal grain that does not have the tip of electrical characteristics.
Description
The present invention relates to semiconductor applications, particularly the method for making of passivated double polar body crystal grain of cylinder glass.
Method for making by general traditional diode crystal grain is to adopt the straight line interlace mode to cut into some grid-like crystal grain with the wafer that laser is finished circuit design, and then uses various chemical medicaments just to finish through repeatedly soaking.The method for making of this kind diode crystal grain has following shortcoming:
1) crystal grain finished of cutting must can be finished the making of diode, not only complex procedures, and serious environment pollution through the immersion of various chemical medicaments repeatedly;
2) again because the crystal grain finished of cutting must can be finished making through the immersion of various chemical medicaments repeatedly, therefore, make the grain surface that completes injured easily, and diode finished product bad order rate is heightened;
3) cutting the crystal grain of finishing is the square shape, and therefore, discharge process takes place its four the top of the horns end easily, thereby makes it electrically unstable, can't use on the high electric equipment of precision requirement.
For improving the various shortcomings of above-mentioned traditional two polar crystal method for makings, the inventor has this industry experience for many years of being engaged in, and through repeatedly constantly studying intensively and testing, the inventive method is designed in development finally.
The object of the invention is: the method for making that a kind of passivated double polar body crystal grain of cylinder glass is provided, this method for making makes need not be through the immersion of multiple repeatedly chemical agent in back segment assembling manufacture process, do not hinder plane of crystal, obtain that electrical characteristics are stable, circular no most advanced and sophisticated diode crystal grain, and attenuating is to the pollution of environment.
The present invention seeks to reach like this: after expanding one deck photoresist that is covered on the number wafer, dry; Being covered with its surface design of one deck on the P of said wafer face has the light shield of some circular transparent ring, this wafer that is covered with light shield is sent in the exposure machine sensitization and with developing liquid developing; Wafer after developing is lost agent with acid solution, form groove; The wafer that etching is finished immerses in the mixed liquor of hydrogen peroxide and sulfuric acid, removes photoresist; The wafer of removing photoresist changed in the deionized water clean, remove the mixed liquor on surface, the grid layer is manifested, dewater then, dry; Fully tamp in the circular groove that etching is finished with glass paste; In quartz ampoule, 720 ℃ of following sintering 1 hour clean; In electroless-plating liquid after the nickel plating, in quartz ampoule, sintering under 650 ℃ and the logical blanket of nitrogen, nickel plating is once again; The glass liner that the upper end is equipped with one deck Chinese wax places on the electric hot plate, make Chinese wax be molten, wafer after the secondary nickel plating is placed on the glass liner that is equipped with Chinese wax, and make Chinese wax contain whole of wafer, to glue the adhesive tape that is provided with some roundlet iron plates more in advance and correctly paste driving fit on wafer, taking off this upper end cementation from electric hot plate has iron plate and lower end cementation that the wafer of glass liner is arranged, move on the flat board of natural cooling and cool off, tear cooled wafer off adhesive tape, send into sandblast in the sand-blasting machine; Sandblast be for wafer sticking be provided with the roundlet iron plate by sandblast on the clad can, after maintaining the achievements of one's predecessors, sandblast on the glass liner, forms many small circular crystal grain, this glass liner and many small circular iron plates are immersed in cleaning in the trichloroethanes, separate, and with magnet with the sucking-off of roundlet iron plate, promptly get passivated double polar body crystal grain of cylinder glass, thereby the object of the invention has just reached fully.
The present invention is described in detail below in conjunction with accompanying drawing.
Accompanying drawing 3 is the schematic diagram of diffusion wafer behind exposure imaging.
Accompanying drawing 4 is the schematic diagram of diffusion wafer after etching.
Accompanying drawing 5 is the schematic diagram of the grid layer lining glass paste of diffusion wafer.
Schematic perspective view when accompanying drawing 7 sticks on diffusion wafer on the tram each roundlet iron plate for desire.
Accompanying drawing 8 is for spreading the generalized section after glue together wafer and glass liner and each small circular iron plate location.
Accompanying drawing 9 by through after the sandblast the generalized section of the cylindric crystal grain of formation.
Relevant parts corresponding as follows among label and the present invention in the accompanying drawing:
The inventive method operation sequence can be consulted calcspar shown in the accompanying drawing 1.Its operation sequence is: the etched trench of a) exposure of diffusion wafer lining photoresist → b) and developing → c) → d) removes the grid layer of photoresist → e) and cleans → f) glass paste grid layer lining → and the g) sandblast of the liner of the nickel plating of high temp glassization → h) and sintering → i) and round iron sheet location gummed → j) and separate circle crystal grain, following division is as follows:
A) diffusion wafer lining photoresist
Preestablish the rotary speed of baking box and photoresist is ready for, the diffusion wafer 1 that cleaning is finished places on the wafer basket support, putting into saggar oven dry (half an hour is until 100 ℃) back again takes out, with this diffusion wafer 1 that toasted photoresist 2 that is covered piecewise, but the P face and the N face of wafer all need have obvious mark, as a means of identification.The habitual photoresist of used photoresist system is made up of the two-fold nitride of polyisoprene, ethylbenzene and aromatic series of dimethylbenzene, cyclisation.First-class photoresistance is carved 2 wafer place in about 75 ℃ baking box baking to take out after half an hour approximately, can change next step over to: exposure and developing, the wafer of gained lining photoresist is as shown in Figure 2;
B) exposure and development
Consult accompanying drawing 3, the P that also toasts the diffusion wafer 1 that finishes at first-class photoresist 2 faces up, N faces down, the light shield 3 of some circular transparent ring 5 is arranged being covered with on its surface of one deck design on the P face, wafer 1 is placed on the sheet glass 4, to be positioned at the sheet glass 4 of lower floor, the diffusion wafer 1 in middle level and the light shield on upper strata 3 clamp smooth, then send in the double-sided exposure machine, photoresist 2 sensitization simultaneously on wafer 1 two sides are taken out after about 10 seconds, that will expose this moment and get well manifests the wafer 1 that some round apertures are arranged at the P face and puts back on the wafer basket support, put into baking box again and toast half an hour approximately, reach 100 ℃ up to temperature; The wafer 1 that will finish through baking takes out, and develops with n-butyl acetate and as each developing process of 15 seconds in the toluene of auxiliary reagent and the acetone soln respectively; Change next step subsequently over to;
C) etched trench
Ready mixed acid is inserted in the acid tank, and this mixed acid is mixed by 9 parts of nitric acid, 9 parts of glacial acetic acid, 14 parts of hydrofluoric acid and 4 parts of sulfuric acid and forms, and makes mixed acid remain on about 10 ℃; Take out being placed on the wafer 1 that finishes that developed on the basket support, and whole basket is put into 10 ℃ acid tank, about 5 minutes of etching moulding, take out subsequently and bath in time, after promptly in the tank that flows, soaking 5～10 minutes, promptly have the circular groove 6 identical in this wafer 1 upper end after bath is soaked, as shown in Figure 4 with the circular transparent ring 5 of light shield 3, the sampling and testing etch depth reaches (127 ± 25.4) 10 up to the degree of depth of this circular groove 6
-6Till the rice (5 ± 1 mil), wafer i.e. no longer etching, enters subsequently to remove the photoresist step;
D) remove photoresist
The wafer 1 that etching is finished immerses in hydrogen peroxide and the sulfuric acid mixture liquid, and sulfuric acid is 37: 1 to the hydrogen peroxide ratio in this intermixture, removes the photoresist that is covered on this wafer 1 surface;
E) the grid layer cleans
The wafer 1 of removing photoresist is washed in deionized water to remove its surperficial mixed liquor, the grid layer is manifested, this wafer 1 was shaken 5 minutes in high-frequency ultrasonic wave, go up appended moisture content so that remove wafer 1 surface, do 5 minutes dehydration concussion later on again with isopropyl alcohol, wafer 1 after the dehydration with 100 ℃ of temperature oven dry, is finished the grid layer and is cleaned on electric hot plate;
F) glass paste grid layer lining
Get ready in advance and add appropriate amount of deionized water by glass dust and add 5% binding agent again and fully stir and form glass paste 7, behind supine wafer 1 cleaning, drying of P, the scraping blade made from flexible plastic (polyurethanes) fully tamps glass paste in the circular groove 6 that etching is finished, and the surface of wafer 1 is kept clean, the wafer 1 of filling in glass paste 7 is placed on the wafer basket support, changes next step over to;
G) high temp glassization
At first make diffusion quartz tube be in 720 ℃ of states, and after the control program that will toast the automatic push-and-pull time configures, the quartzy frame that is placed with wafer 1 is put into this quartz ampoule carry out sintering, start push button after buckling automatic pull bar, logical nitrogen in this quartz ampoule, influence its electrical characteristic to prevent the wafer oxidation, when wafer sintering after about 1 hour, glass paste can be finished high temp glassization, this wafer 1 of finishing after the high temp glassization is taken out, and clean with wiping after, can carry out nickel plating and sintering program;
H) nickel plating and sintering
In advance known electroless-plating liquid is prepared, and be heated to 75 ℃; After the wafer 1 surperficial activation processing in advance of having finished high temp glassization season, be placed on the nickel plating basket support, in electroless-plating liquid, carry out the 1st nickel plating, taking out the back cleans in water, in isopropanol bath, dewater again, on electric hot plate, dry again, again with its folded be sandwiched on the wafer basket support after, inserting the interior logical nitrogen sintering of about 650 ℃ sintered quartz pipe takes out after about 1 hour, again with the wafer behind this sintering 1 again nickel plating once (secondary nickel plating) form nickel coating 8, can carry out subsequent processing: liner and round iron sheet location gummed;
I) liner and round iron sheet location gummed
Shown in accompanying drawing 7 and 8, glass liner 10 is placed on about 120 ℃ electric hot plate 9, and make Chinese wax 11 be dissolved in the surface of this liner 10 in right amount, and the wafer after the secondary nickel plating 1 is cemented on the glass liner 10 of surperficial melting Chinese wax 11, also make Chinese wax 11 dissolve the surface that covers monoblock wafer 1 simultaneously, in addition, make at the sticking adhesive tape 13 that is provided with some roundlet iron plates 12 of bottom side and correctly cement in wafer 1 upper end by Chinese wax 11, the position of pasting with each roundlet iron plate just can be closely connected respectively each is filled in degree of being on the glass paste of high temp glassization in the circular groove on wafer, like this, can increase the weight of in each roundlet iron plate 12 upper end, make each roundlet iron plate 12 closer with the bonding of wafer 1, take off the wafer 1 that round iron sheet 12 that this upper end cementation has and lower end cementation have glass liner 10 from heating plate subsequently, move on the flat board of natural cooling and cool off, tear the wafer 1 of cooling off adhesive tape 13, send into sandblast in the sand-blasting machine;
J) sandblast and separation circle crystal grain
The sticking one side that is provided with roundlet iron plate 12 in wafer 1 surface is carried out sandblast; after sandblast is finished; should check whether the be not sticked position of roundlet iron plate 12 of this wafer 1 has been blown spray and worn; when wearing as spraying; can obviously see many wafer 1 parts that are subjected to 12 protections of roundlet iron plate and do not fallen from glass liner 10 by spray; these wafers that stay partly are exactly the passivated double polar body crystal grain of cylinder glass 14 that the present invention desires to make; (as shown in Figure 9); after treating that the sandblast step is finished; left glass liner 10 is finished in sandblast to be immersed in the trichloroethanes with many crystal grain 14 and cleans; separate; re-using supersonic oscillations removes the moisture content on crystal grain 14 surfaces; and with magnet roundlet iron plate 12 is inhaled and to be gone, what stay is the circular crystal grain 14 of circular glass lining.
The invention provides a kind of method for making of passivated double polar body crystal grain of cylinder glass, method for making of the present invention need not hindered the crystal top layer, and can reduce environmental pollution through the immersion of multiple repeatedly chemical agent, and the rounded nothing of crystal grain is most advanced and sophisticated, thereby the electrical characteristic of crystal grain is stable.Features simple and practical process has value on the industry.
Claims (5)
1, a kind of method for making of circular slab glassivation diode crystal grain is characterized in that having the following step:
A) drying behind lining one deck photoresist on the diffusion wafer;
B) exposure and develop: on the P of said wafer face, be covered with the light shield that its surface design of one deck has some circular transparent ring, this wafer that is covered with light shield is sent into exposure machine sensitization and develop with developer;
C) etched trench: the wafer after will developing forms groove with the acid solution etching;
D) remove photoresist: the wafer that etching is finished immerses in hydrogen peroxide and the sulfuric acid mixture liquid, removes photoresist;
E) the grid layer cleans: the wafer that will remove photoresist cleans in deionized water, removes its surperficial mixed liquor, and the grid layer is manifested, and dewaters then, dries;
F) glass paste grid layer lining: fully tamp in the circular groove that etching is finished with glass paste;
G) high temp glassization: in quartz ampoule, about 1 hour of 720 ℃ of following sintering clean;
H) nickel plating and sintering: in electroless-plating liquid after the nickel plating, in quartz ampoule, sintering under 650 ℃ and the logical blanket of nitrogen, nickel plating is once again;
I) liner and round iron sheet location gummed: the glass liner that the upper end is equipped with one deck Chinese wax places on the electric hot plate, make Chinese wax be molten, wafer after the secondary nickel plating is placed on this glass liner that is equipped with Chinese wax, and make Chinese wax contain whole of wafer, to glue the adhesive tape that is provided with some roundlet iron plates more in advance and correctly paste driving fit on wafer, taking off this upper end cementation from electric hot plate has round iron sheet and lower end cementation that the wafer of glass liner is arranged, move on the flat board of natural cooling and cool off, cooled wafer is torn out adhesive tape, send into sandblast in the sand-blasting machine;
J) sandblast and separation circle crystal grain: the sticking one side that is provided with the roundlet iron plate of wafer surface is carried out sandblast, after sandblast is finished, on the glass liner, form many small circular crystal grain, this glass liner and a lot of small circular crystal grain is immersed in the trichloroethanes cleans, separate, and with magnet with the sucking-off of roundlet iron plate, promptly get passivated double polar body crystal grain of cylinder glass.
2, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at c) used etching acid solution is mixed by 9 parts of nitric acid, 9 parts of glacial acetic acid, 14 parts of hydrofluoric acid and 4 parts of sulfuric acid in the step.
3, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at d) remove that sulfuric acid and hydrogen peroxide ratio are 37: 1 in the mixed liquor that photoresist uses in the step.
4, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at f) said glass paste adds deionized water by glass dust and adds 5% bonding agent again and fully stir and form in the step.
5, according to the method for making of the said passivated double polar body crystal grain of cylinder glass of claim 1, it is characterized in that: at i) will be on wafer in the step in the sticking adhesive tape sticking driving fit that is provided with some roundlet iron plates of its bottom side, the position of stickup with each roundlet iron plate just can be closely connected respectively each is filled in degree of being on the glass paste of high temp glassization in the circular groove on wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93107505 CN1082253A (en) | 1993-06-26 | 1993-06-26 | The method for making of passivated double polar body crystal grain of cylinder glass |
| CN 93120319 CN1032887C (en) | 1993-06-26 | 1993-12-03 | Method for making passivated double polar body crystal grain of cylinder glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93107505 CN1082253A (en) | 1993-06-26 | 1993-06-26 | The method for making of passivated double polar body crystal grain of cylinder glass |
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| Publication Number | Publication Date |
|---|---|
| CN1082253A true CN1082253A (en) | 1994-02-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93107505 Pending CN1082253A (en) | 1993-06-26 | 1993-06-26 | The method for making of passivated double polar body crystal grain of cylinder glass |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302523C (en) * | 2004-12-21 | 2007-02-28 | 天津中环半导体股份有限公司 | Glass deactivating forming process for table top rectifier |
| CN101819992A (en) * | 2010-03-31 | 2010-09-01 | 固镒电子(芜湖)有限公司 | Rectifier grain, production method thereof and suction cup mould |
| CN105244268A (en) * | 2015-10-20 | 2016-01-13 | 中国振华集团永光电子有限公司（国营第八七三厂） | GPP chip breaking method |
-
1993
- 1993-06-26 CN CN 93107505 patent/CN1082253A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302523C (en) * | 2004-12-21 | 2007-02-28 | 天津中环半导体股份有限公司 | Glass deactivating forming process for table top rectifier |
| CN101819992A (en) * | 2010-03-31 | 2010-09-01 | 固镒电子(芜湖)有限公司 | Rectifier grain, production method thereof and suction cup mould |
| CN101819992B (en) * | 2010-03-31 | 2012-10-17 | 固镒电子(芜湖)有限公司 | Rectifier grain, production method thereof and suction cup mould |
| CN105244268A (en) * | 2015-10-20 | 2016-01-13 | 中国振华集团永光电子有限公司（国营第八七三厂） | GPP chip breaking method |
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| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |