CN108209900A - Intracranial pressure sensor, detection device and preparation method - Google Patents
Intracranial pressure sensor, detection device and preparation method Download PDFInfo
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- CN108209900A CN108209900A CN201711498603.9A CN201711498603A CN108209900A CN 108209900 A CN108209900 A CN 108209900A CN 201711498603 A CN201711498603 A CN 201711498603A CN 108209900 A CN108209900 A CN 108209900A
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/03—Detecting, measuring or recording fluid pressure within the body other than blood pressure, e.g. cerebral pressure; Measuring pressure in body tissues or organs
- A61B5/031—Intracranial pressure
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
- A61B2562/02—Details of sensors specially adapted for in-vivo measurements
- A61B2562/0247—Pressure sensors
Abstract
The disclosure provides a kind of intracranial pressure sensor, including：Presser sensor capacitance, capacitance change with intracranial pressure and are changed, including：Pressure sensitive layer, deformation quantity change with intracranial pressure and are changed；First electrode layer and the second electrode lay are respectively formed in the both sides of the pressure sensitive layer, form capacitance structure, and its spacing changes with the deformation quantity of the pressure sensitive layer and changed；And flexible wrapping layer, it is wrapped on the outside of the pressure sensitive layer, the first electrode layer and the second electrode lay, is attached between skull and dura mater；And fixed inductance, LC oscillating circuits are formed with the presser sensor capacitance, are implanted in skull, for capacitance signal to be converted to resonant frequency signal, and coupled to external detection equipment, obtain intracranial pressure force value.The sensor capacitance part for being implanted into encephalic uses flexible material, minimum to intracranial tissue damage, can greatly reduce intracranialing hemorrhage complication risks of Denging；Flexible material is easily bonded with meninx, is measured more accurate.
Description
Technical field
The present invention relates to a kind of technical field of medical equipment more particularly to intracranial pressure sensor, detection device and preparations
Method.
Background technology
Intracranial pressure is pressure of the cranial cavities such as brain tissue, cerebrospinal fluid, blood content to cranial cavity inner wall, in brain trauma and nerve
It is all of great significance in the clinical diagnosis of medical patient.Normal intracranial pressure range is between 70 to 180mm H2O, clinically by cranium
Internal pressure continues more than 5min more than 180mm H2O is known as increased intracranial pressure.Increased intracranial pressure can cause a series of Neurology
With the pathological change of neurosurgery, initial stage is mainly shown as with katzeniammer, vomiting, papilloedema etc.；Serious encephalic
Pressure, which increases, can also result in the complication such as hydrocephalus, brain tumor, meningitis or even in a short time crisis life.Therefore, develop cranium
For the Accurate Diagnosis state of an illness and in time, determining clinical treatment all has very important significance inspection of inner pressure method.
Existing intracranial pressure detection technique can be divided into implanted and non-built-in mode two according to whether sensor is implanted into encephalic
Class.Implanted intracranial pressure detection technique compares non-built-in mode intracranial pressure detection technique, can be straight by environmental disturbances factor smaller
Contact measurement intracranial pressure force value is connect, it is more extensive in clinical practice.At present, the implanted intracranial pressure of application is clinically obtained
Power detection technique is wired, that is, being implanted in the sensor of encephalic needs to connect with external detection equipment by conduit, is holding
There are inconveniences in continuous monitoring process, if intracranial infection risk is big, nurse difficulty.It is more in recent years for this problem
Wireless and passive technology is employed in item research, which connect with external equipment by implanted sensor without conducting wire and do not need to adopt
It is that sensor is powered with any type of power supply such as battery, can effectively reduces infection risk, be led in intracranial pressure long term monitoring
Domain has great application potential.
However during the disclosure is realized, it is found by the applicant that the passive intracranial pressure inspection of implantation type wireless in the prior art
Implantable sensor is hard material used by survey technology, will be based on hard material including silicon, glass and plastics etc.
In sensor implantation encephalic even brain tissue, there is equivalent risk of intracranialing hemorrhage, and size sensor is larger, to implanted sensor
Surrounding tissue has push effect, so that there are a degree of distortions for institute's measuring pressure.
Invention content
(1) technical problems to be solved
Based on the above problem, the disclosure provides a kind of intracranial pressure sensor, detection device and preparation method, existing to alleviate
Some implantable sensors due to using hard material, be easy to cause and intracranial hemorrhage, and there are a degree of for measurement result
The technical issues of distortion.
(2) technical solution
In an exemplary embodiment of the disclosure, a kind of intracranial pressure sensor is provided, including：Presser sensor electricity
To hold, capacitance changes with intracranial pressure and is changed, including：Pressure sensitive layer, deformation quantity change with intracranial pressure and are changed；
First electrode layer and the second electrode lay are respectively formed in the both sides of the pressure sensitive layer, form capacitance structure, its spacing is with institute
The deformation quantity for stating pressure sensitive layer changes and changes；And flexible wrapping layer, it is wrapped in the pressure sensitive layer, first electricity
On the outside of pole layer and the second electrode lay, it is attached between skull and dura mater；And fixed inductance, with the presser sensor capacitance
LC oscillating circuits are formed, are implanted in skull, for capacitance signal to be converted to resonant frequency signal, and coupled to external detection
Equipment obtains intracranial pressure force value.
In the disclosure, cavity is formed on the pressure sensitive layer, tapered protrusion array, institute are provided in the cavity
It states first electrode layer or the second electrode lay is fastened in the cavity, and support and be located on the tapered protrusion array.
In the disclosure, the first electrode layer includes：First sub-electrode layer；Second sub electrode layer, with the described first son
Electrode layer is disposed adjacent and shape is identical；The first sub-electrode layer and the second electrode lay and the second sub electrode layer
Double capacitance cascaded structures are formed with the second electrode lay.
In the disclosure, it is both provided with conducting wire tie point on the first sub-electrode layer and the second sub electrode layer；Institute
It states to correspond on flexible wrapping layer and is provided with wire guide at the conducting wire tie point.
In the disclosure, the fixed inductance is magnetic core wire-wound inductor, and between 10 between 50mH, diameter is less than inductance value
8mm, highly less than 8mm；And/or the thickness of the flexible wrapping layer is between 10 to 20 μm.
In the disclosure, the pressure sensitive layer includes PDMS, and the first electrode layer and the second electrode lay include
Metallic gold, the flexibility wrapping layer include Parylene.
In another exemplary embodiment of the disclosure, a kind of intracranial pressure detection device is also provided, including：The disclosure
The intracranial pressure sensor of offer；And external detection equipment, and the fixed inductance magnetic coupling, for by resonant frequency signal
Be converted to intracranial pressure force value.
In the further exemplary embodiment of the disclosure, a kind of preparation method is also provided, using MEMS processing technologys, packet
It includes：Step A：Parylene is deposited on two pieces of glass substrates respectively, forms two pieces of flexible wrapping layers；Step B：One piece wherein
First electrode layer is formed on the flexibility wrapping layer, the second electrode lay is formed on another piece of flexible wrapping layer；Step C：
The first electrode layer and the second electrode lay are oppositely arranged, and form pressure sensitive layer wherein；Step D：Remove glass
Glass substrate etches flexible wrapping layer, forms wire guide；Step E：Fixed inductance is electrically connected with first electrode layer by wire guide
It connects, forms LC oscillating circuits, the intracranial pressure sensor of disclosure offer is provided.
In the disclosure, the step C includes：Step C1：The spin coating on the reversing mould with conical indentation array
PDMS tips upside down on the step B the second electrode lays formed on PDMS, cures PDMS and removes reversing mould, obtains tapered protrusion
Array；Step C2：Spin coating PDMS in the first electrode layer formed in step B, PDMS is to exposing first electrode layer, and formed for etching
With the cavity of tapered protrusion microwell array；Step C3：The step C1 and step C2 PDMS formed are bonded, it is quick to form pressure
Feel layer.
In the disclosure, it in the step C1, using potassium hydroxide corrosive liquid corrosion of silicon substrate, is formed recessed with taper
It breaks through enemy lines the reversing moulds of row.
(3) advantageous effect
It can be seen from the above technical proposal that intracranial pressure sensor, detection device and preparation method that the disclosure provides
Have the advantages that one of them or a portion：
(1) the sensor capacitance part of implantation encephalic uses flexible material, minimum to intracranial tissue damage, can greatly reduce
It intracranials hemorrhage and waits complication risks；Flexible material is easily bonded with meninx, is measured more accurate；
(2) pressure sensitive layer uses the cavity structure with tapered protrusion array, and it is sensitive can effectively to promote cell pressure
Degree, while capacitance relative dielectric constant can be increased during compressive deformation；
(3) presser sensor capacitance can reduce the lead that electrical connection is formed with fixed inductance using double capacitance cascaded structures
Difficulty；
(4) presser sensor capacitance is made of the material for having flexible and bio-compatibility, is further reduced to user
The stimulation of brain；
(5) pliable pressure sensitization capacitance is prepared using MEMS processing technologys, the sensor capacitance part of implantation encephalic can be made
Small, thickness is thin, minimum to intracranial tissue push effect, and manufacturing cost is low, convenient for being promoted the use of in clinic.
Description of the drawings
Fig. 1 is the exploded perspective view of presser sensor capacitance in the intracranial pressure sensor that the disclosure provides.
Fig. 2 is the structure diagram of pressure sensitive layer in the intracranial pressure sensor that the disclosure provides.
Fig. 3 is the working state schematic representation of intracranial pressure detection device that the disclosure provides.
Fig. 4 is the flow diagram of preparation method that the disclosure provides.
【Embodiment of the present disclosure main element symbol description in attached drawing】
10- presser sensor capacitances；20- fixed inductances；30- external detection equipments；
11- pressure sensitive layers；12 first electrode layers；
13- the second electrode lays；14- flexibility wrapping layers；
111- cavitys；112- tapered protrusion arrays；
121- the first sub-electrode layers；122- second sub electrode layers；
123- conducting wire tie points；141- wire guides；
1121- reversing moulds.
Specific embodiment
In the disclosure, sensor capacitance is made by flexible material, it is minimum to intracranial tissue damage after implantation skull is interior, it can
Greatly reduce intracranialing hemorrhage grade for complication risks；Flexible material is easily bonded with meninx, is measured more accurate.
Purpose, technical scheme and advantage to make the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Fig. 1 is the exploded perspective view of presser sensor capacitance in the intracranial pressure sensor that the disclosure provides.
In an exemplary embodiment of the disclosure, as shown in Figure 1, a kind of intracranial pressure sensor is provided, including：Pressure
Power sensitization capacitance 10, capacitance change with intracranial pressure and are changed, including：Pressure sensitive layer 11, deformation quantity is with intracranial pressure
Power changes and changes；First electrode layer 12 and the second electrode lay 13 are respectively formed in the both sides of pressure sensitive layer 11, form capacitance
Structure, its spacing change with the deformation quantity of pressure sensitive layer 11 and are changed；And flexible wrapping layer 14, it is wrapped in pressure sensitive layer
11st, 13 outside of first electrode layer 12 and the second electrode lay, is attached between skull and dura mater；And fixed inductance 20, with pressure
Sensitization capacitance 10 forms LC oscillating circuits, is implanted in skull, for capacitance signal to be converted to resonant frequency signal, and couples
To external detection equipment 30, intracranial pressure force value is obtained.
By the variation of intracranial pressure, squeeze pressure sensitive layer 11 makes pressure sensitive layer 11 generate deformation, so as to make first
The spacing of electrode layer 12 and the second electrode lay 13 changes, and then forms the capacitance for changing with intracranial pressure and changing, and leads to
It crosses fixed inductance 20 and the capacitance signal of variation is converted into the resonant frequency signal changed with intracranial pressure, then pass through electromagnetic coupling
It is transferred to external detection equipment 30, you can obtain intracranial pressure force value, be wrapped in by wrapping layer 14 flexible made of flexible material
The most external of presser sensor capacitance structure, reduce intracranial tissue damage while, can also greatly reduce intracranial hemorrhage wait concurrently
Disease risk；And flexible material is easily bonded with meninx, is measured more accurate.
Fig. 2 is the structure diagram of pressure sensitive layer in the intracranial pressure sensor that the disclosure provides.
In the disclosure, as shown in Fig. 2, being formed with cavity 111 on pressure sensitive layer 11, taper is provided in cavity 111
Array of protrusions 112, first electrode layer 12 or the second electrode lay 13 are fastened in cavity 111, and are supported and be located at tapered protrusion array 112
On, it using such setting, can effectively be promoted under similary pressure, the deformation degree of pressure sensitive layer 11, and then promote intracranial pressure
The pressure-sensitivity of force snesor, and the relative dielectric constant of presser sensor capacitance 10 can be increased during compressive deformation.
In the disclosure, first electrode layer 12 includes：First sub-electrode layer 121；Second sub electrode layer 122, with the first son
Electrode layer 121 is disposed adjacent and shape is identical；First sub-electrode layer 121 and the second electrode lay 13 and second sub electrode layer 122
Double capacitance cascaded structures are formed with the second electrode lay 13, using such setting, conducting wire tie point can be provided only on to the first son
On electrode layer 121 and the second electrode lay 13, i.e., conducting wire is only drawn from the side of first electrode layer 12, without from presser sensor capacitance
10 both sides difference lead, reduces the lead difficulty that electrical connection is formed with fixed inductance 20.
In the disclosure, as shown in Figure 1, being both provided with conducting wire company on the first sub-electrode layer 121 and second sub electrode layer 122
Contact 123.
In the disclosure, as shown in Figure 1, being provided with wire guide at corresponding lead tie point 123 on flexible wrapping layer 14
141。
In the disclosure, fixed inductance 20 is magnetic core wire-wound inductor, and between 10 between 50mH, diameter is less than inductance value
8mm, highly less than 8mm, using small-sized magnetic core wire-wound inductor, in the case where meeting stiffness of coupling, it is easier to be implanted into
In user's skull.
In the disclosure, the thickness of flexible wrapping layer 14 is between 10 to 20 μm.
In the disclosure, pressure sensitive layer 11 includes PDMS (Polydimethylsiloxane- dimethyl silicone polymers),
First electrode layer 12 and the second electrode lay 13 include metallic gold, and flexible wrapping layer 14 includes Parylene (Parylene), adopts
Intracranial pressure sensor is made with the material for having flexible and bio-compatibility, it, can be further after user's brain is implanted into
Reduce the stimulation to brain.
Fig. 3 is the working state schematic representation of intracranial pressure detection device that the disclosure provides.
In another exemplary embodiment of the disclosure, as shown in figure 3, a kind of intracranial pressure detection device is also provided,
Including：The intracranial pressure sensor that the disclosure provides；And external detection equipment 30, and 20 magnetic coupling of fixed inductance, for will
Resonant frequency signal is converted to intracranial pressure force value.
Fig. 4 is the flow diagram of preparation method that the disclosure provides.
In the further exemplary embodiment of the disclosure, as shown in figure 4, a kind of preparation method is also provided, using MEMS
Processing technology, including：Step A：Parylene is deposited on two pieces of glass substrates respectively, forms two pieces of flexible wrapping layers 14；Step
Rapid B：First electrode layer 12 is formed on one piece of flexible wrapping layer 14 wherein, the second electricity is formed on another piece of flexible wrapping layer 14
Pole layer 13；Step C：First electrode layer 12 and the second electrode lay 13 are oppositely arranged, and form pressure sensitive layer 11 wherein；Step
Rapid D：Glass substrate is removed, flexible wrapping layer is etched, forms wire guide 141；Step E：By fixed inductance 20 and first electrode layer
12 are electrically connected by wire guide 141, form LC oscillating circuits, obtain the intracranial pressure sensor of disclosure offer.
In the disclosure, step C includes：Step C1：The spin coating PDMS on the reversing mould with conical indentation array, will
The second electrode lay 13 that step B is formed is tipped upside down on PDMS, is cured PDMS and is removed reversing mould, obtains tapered protrusion array；
Step C2：Spin coating PDMS in the first electrode layer 12 formed in step B, etching PDMS are formed to exposing first electrode layer 12
With 112 matched cavity 111 of tapered protrusion array；Step C3：The step C1 and step C2 PDMS formed are bonded, are formed
Pressure sensitive layer 11.
In the disclosure, it in step C1, using potassium hydroxide corrosive liquid corrosion of silicon substrate, is formed with conical indentation battle array
The reversing mould of row.
In the disclosure, in step C1, after the step B the second electrode lays formed are tipped upside down on PDMS, it is placed in vacuum ring
Border, for removing the bubble in PDMS.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that it in attached drawing or says
In bright book text, the realization method that is not painted or describes is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or replaced to it.
According to above description, intracranial pressure sensor, detection device that those skilled in the art should be to disclosure offer
And preparation method has clear understanding.
In conclusion intracranial pressure sensor, detection device and preparation method that the disclosure provides pass through flexible material system
Make sensor capacitance, it is minimum to intracranial tissue damage after implantation skull is interior, it can greatly reduce intracranialing hemorrhage complication risks of Denging；It is soft
Property material be easily bonded with meninx, measure it is more accurate.
It should also be noted that, the direction term mentioned in embodiment, for example, " on ", " under ", "front", "rear", " left side ",
" right side " etc. is only the direction of refer to the attached drawing, is not used for limiting the protection domain of the disclosure.Through attached drawing, identical element by
Same or similar reference numeral represents.When understanding of this disclosure may be caused to cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference mark between bracket should not be configured to the limit to claim
System.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the method for the disclosure should be construed to reflect following intention：I.e. required guarantor
The disclosure of shield requires features more more than the feature being expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim is in itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. a kind of intracranial pressure sensor, including：
Presser sensor capacitance, capacitance change with intracranial pressure and are changed, including：
Pressure sensitive layer, deformation quantity change with intracranial pressure and are changed；
First electrode layer and the second electrode lay are respectively formed in the both sides of the pressure sensitive layer, form capacitance structure, its spacing
Change with the deformation quantity of the pressure sensitive layer and change；And
Flexible wrapping layer is wrapped on the outside of the pressure sensitive layer, the first electrode layer and the second electrode lay, is attached at
Between skull and dura mater；And
Fixed inductance forms LC oscillating circuits with the presser sensor capacitance, is implanted in skull, for capacitance signal to be converted
For resonant frequency signal, and coupled to external detection equipment, obtain intracranial pressure force value.
2. intracranial pressure sensor according to claim 1, it is formed with cavity on the pressure sensitive layer, in the cavity
Tapered protrusion array is provided with, the first electrode layer or the second electrode lay are fastened in the cavity, and are supported and be located at institute
It states on tapered protrusion array.
3. intracranial pressure sensor according to claim 1, the first electrode layer include：
First sub-electrode layer；
Second sub electrode layer is disposed adjacent with the first sub-electrode layer and shape is identical；
The first sub-electrode layer and the second electrode lay and the second sub electrode layer and the second electrode lay are formed
Double capacitance cascaded structures.
4. intracranial pressure sensor according to claim 3, on the first sub-electrode layer and the second sub electrode layer
It is both provided with conducting wire tie point；
It is corresponded on the flexibility wrapping layer and is provided with wire guide at the conducting wire tie point.
5. intracranial pressure sensor according to claim 1, the fixed inductance is magnetic core wire-wound inductor, inductance value between
10 between 50mH, and diameter is less than 8mm, highly less than 8mm；And/or
The thickness of the flexibility wrapping layer is between 10 to 20 μm.
6. intracranial pressure sensor according to claim 1, the pressure sensitive layer includes PDMS, the first electrode layer
Metallic gold is included with the second electrode lay, the flexibility wrapping layer includes Parylene.
7. a kind of intracranial pressure detection device, including：
Such as above-mentioned intracranial pressure sensor according to any one of claims 1 to 6；And
External detection equipment, and the fixed inductance magnetic coupling, for resonant frequency signal to be converted to intracranial pressure force value.
8. a kind of preparation method, using MEMS processing technologys, including：
Step A：Parylene is deposited on two pieces of glass substrates respectively, forms two pieces of flexible wrapping layers；
Step B：First electrode layer is formed on one piece of flexible wrapping layer wherein, the shape on another piece of flexible wrapping layer
Into the second electrode lay；
Step C：The first electrode layer and the second electrode lay are oppositely arranged, and form pressure sensitive layer wherein；
Step D：Glass substrate is removed, flexible wrapping layer is etched, forms wire guide；
Step E：Fixed inductance with first electrode layer by wire guide is electrically connected, LC oscillating circuits is formed, obtains as above-mentioned
Intracranial pressure sensor according to any one of claims 1 to 6.
9. preparation method according to claim 8, the step C includes：
Step C1：The spin coating PDMS on the reversing mould with conical indentation array, the second electrode lay that step B is formed are buckled to
On PDMS, cure PDMS and remove reversing mould, obtain tapered protrusion array；
Step C2：Spin coating PDMS in the first electrode layer formed in step B, PDMS is to exposing first electrode layer, and formed for etching
With the cavity of tapered protrusion microwell array；
Step C3：The step C1 and step C2 PDMS formed are bonded, form pressure sensitive layer.
10. preparation method according to claim 9, in the step C1, using potassium hydroxide corrosive liquid corrosion of silicon base
Plate forms the reversing mould with conical indentation array.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711498603.9A CN108209900A (en) | 2017-12-29 | 2017-12-29 | Intracranial pressure sensor, detection device and preparation method |
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| CN110575600A (en) * | 2019-09-24 | 2019-12-17 | 河北工业大学 | Be applied to miniature pressure sensor of interventional therapy integration in pipe head outer wall |
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| CN112336391A (en) * | 2019-08-09 | 2021-02-09 | 海宁先进半导体与智能技术研究院 | Spinal nerve root stress sensing microsystem |
| CN112515646A (en) * | 2020-11-20 | 2021-03-19 | 浙江清华柔性电子技术研究院 | Pressure sensor and preparation method and use method thereof |
| CN113180604A (en) * | 2021-04-28 | 2021-07-30 | 中国科学院空天信息创新研究院 | Preparation method of multi-modal sensor for acquiring intracranial physiological and biochemical information |
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| CN112515646A (en) * | 2020-11-20 | 2021-03-19 | 浙江清华柔性电子技术研究院 | Pressure sensor and preparation method and use method thereof |
| CN113180604A (en) * | 2021-04-28 | 2021-07-30 | 中国科学院空天信息创新研究院 | Preparation method of multi-modal sensor for acquiring intracranial physiological and biochemical information |
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