CN108198849A - 一种齐纳二极管及其制造方法 - Google Patents
一种齐纳二极管及其制造方法 Download PDFInfo
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- CN108198849A CN108198849A CN201711189305.1A CN201711189305A CN108198849A CN 108198849 A CN108198849 A CN 108198849A CN 201711189305 A CN201711189305 A CN 201711189305A CN 108198849 A CN108198849 A CN 108198849A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000015556 catabolic process Effects 0.000 claims abstract description 37
- 239000002019 doping agent Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 238000002955 isolation Methods 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 3
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- 238000009792 diffusion process Methods 0.000 description 7
- 238000000407 epitaxy Methods 0.000 description 4
- -1 phosphonium ion Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711189305.1A CN108198849B (zh) | 2017-11-24 | 2017-11-24 | 一种齐纳二极管及其制造方法 |
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CN201711189305.1A CN108198849B (zh) | 2017-11-24 | 2017-11-24 | 一种齐纳二极管及其制造方法 |
Publications (2)
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CN108198849A true CN108198849A (zh) | 2018-06-22 |
CN108198849B CN108198849B (zh) | 2021-07-13 |
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CN201711189305.1A Active CN108198849B (zh) | 2017-11-24 | 2017-11-24 | 一种齐纳二极管及其制造方法 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109192729A (zh) * | 2018-08-31 | 2019-01-11 | 上海华虹宏力半导体制造有限公司 | 半导体结构及其形成方法 |
CN109920778A (zh) * | 2019-03-27 | 2019-06-21 | 北京燕东微电子科技有限公司 | 半导体结构及其测试方法 |
CN111540805A (zh) * | 2020-05-28 | 2020-08-14 | 湖北京邦科技有限公司 | 半导体装置和光电探测*** |
CN113161426A (zh) * | 2021-04-27 | 2021-07-23 | 上海华虹宏力半导体制造有限公司 | 二极管及其制造方法 |
CN113611606A (zh) * | 2021-07-28 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | 稳压二极管及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
CN102290415A (zh) * | 2010-06-17 | 2011-12-21 | 安森美半导体贸易公司 | 半导体装置及其制造方法 |
CN103456798A (zh) * | 2012-06-05 | 2013-12-18 | 上海华虹Nec电子有限公司 | Tvs器件及制造方法 |
CN103972084A (zh) * | 2013-01-28 | 2014-08-06 | 上海华虹宏力半导体制造有限公司 | 埋型纵向齐纳二极管的制造方法 |
-
2017
- 2017-11-24 CN CN201711189305.1A patent/CN108198849B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
CN102290415A (zh) * | 2010-06-17 | 2011-12-21 | 安森美半导体贸易公司 | 半导体装置及其制造方法 |
CN103456798A (zh) * | 2012-06-05 | 2013-12-18 | 上海华虹Nec电子有限公司 | Tvs器件及制造方法 |
CN103972084A (zh) * | 2013-01-28 | 2014-08-06 | 上海华虹宏力半导体制造有限公司 | 埋型纵向齐纳二极管的制造方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109192729A (zh) * | 2018-08-31 | 2019-01-11 | 上海华虹宏力半导体制造有限公司 | 半导体结构及其形成方法 |
CN109920778A (zh) * | 2019-03-27 | 2019-06-21 | 北京燕东微电子科技有限公司 | 半导体结构及其测试方法 |
CN109920778B (zh) * | 2019-03-27 | 2024-02-06 | 北京燕东微电子科技有限公司 | 半导体结构及其测试方法 |
CN111540805A (zh) * | 2020-05-28 | 2020-08-14 | 湖北京邦科技有限公司 | 半导体装置和光电探测*** |
CN113161426A (zh) * | 2021-04-27 | 2021-07-23 | 上海华虹宏力半导体制造有限公司 | 二极管及其制造方法 |
CN113161426B (zh) * | 2021-04-27 | 2023-08-22 | 上海华虹宏力半导体制造有限公司 | 二极管及其制造方法 |
CN113611606A (zh) * | 2021-07-28 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | 稳压二极管及其制作方法 |
CN113611606B (zh) * | 2021-07-28 | 2024-03-19 | 上海华虹宏力半导体制造有限公司 | 稳压二极管及其制作方法 |
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CN108198849B (zh) | 2021-07-13 |
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Effective date of registration: 20200120 Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant after: Nanjing Xilijie Semiconductor Technology Co., Ltd. Address before: 310012 Wensanlu Road, Hangzhou Province, No. 90 East Software Park, science and technology building A1501 Applicant before: Silicon Lijie Semiconductor Technology (Hangzhou) Co., Ltd. |
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Address after: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant after: Nanjing Sili Microelectronics Technology Co., Ltd Address before: 210042 302, Xuanwu Road, 7, Xuanwu Road, Xuanwu District, Nanjing, Jiangsu, China, 7 Applicant before: Silergy Semiconductor Technology (Hangzhou) Ltd. |
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