CN108183391B - A method of improving the material doped concentration of N-shaped GaSb base semiconductor laser - Google Patents
A method of improving the material doped concentration of N-shaped GaSb base semiconductor laser Download PDFInfo
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- CN108183391B CN108183391B CN201810006341.8A CN201810006341A CN108183391B CN 108183391 B CN108183391 B CN 108183391B CN 201810006341 A CN201810006341 A CN 201810006341A CN 108183391 B CN108183391 B CN 108183391B
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- doped source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
Abstract
The invention discloses a kind of methods for improving N-shaped GaSb base semiconductor laser material carrier doping concentration.This method realizes that polymer doped source is cracked into monoatomic molecules by the way that pyrolysis device is arranged in doping in a steady stream furnace, doped source is set to be doped to material internal in the form of monoatomic molecules, related pyrolysis device is equipped with needle-valve, the polymer doped source that the needle-valve can control proper strength enters pyrolysis device, and the doped source of multimeric forms is made sufficiently to be cracked into monoatomic molecules form in cracker.This method disclosed by the invention obtains the Te molecular beam of monoatomic molecules using the doped source pyrolysis device of special designing, it solves the problems, such as that the tradition source Te is low with doping concentration caused by multimeric forms doping, material epitaxy is ropy, can realize that doping concentration reaches 1 × 10 in the form of Te monoatomic molecules19cm‑3Or more, meet the requirement of 2 mu m waveband GaSb base semiconductor laser element manufacturings.
Description
Technical field
The present invention relates to semiconductor laser material fields, in particular to a kind of to pass through cracking polymer doped chemical, shape
It is adulterated at monoatomic molecules, improves the charge-carrier dopant concentration and epitaxial material of N-shaped GaSb base semiconductor laser dopant material
The epitaxial growth method and device of crystal quality.
Background technique
Semiconductor laser have many advantages, such as small in size, light-weight, the service life is long, it is at low cost, be easy to mass production, answer extensively
For opto-electronics, it has also become the core devices of current photoelectron scientific domain.Semiconductor laser laser ranging, swash
Optical radar, laser communication, laser analog weapon, laser alertness, laser guidance tracking, ignition and blasting, automatic control, detecting instrument
Etc. have been widely used, form wide market.It is brilliant with GaSb material in GaSb base semiconductor laser material
The matched ternary of lattice, the spectral region of quaternary alloy material are examined between 1.5~4.3 μm in fiber optic communication, gas characteristic spectral line
Survey and biochemical product detection etc. have very wide application prospect, currently, GaSb sill is widely used in preparing
The laser and detector of infrared optical fiber transmission.In addition, the electron mobility ratio GaAs material of GaSb material is much higher, so that it
It is had a good application prospect in terms of making microwave device.But there is no the high-performance of 2 mu m waveband of output wavelength in China
GaSb base semiconductor laser, and it is lower in the output power of the semiconductor laser of the wave band in the world, and only 300mW is left
It is right.
2 mu m waveband GaSb base semiconductor laser devices can not achieve high-performance high power laser light output the main reason for be
Due to the n-type doping layer material charge-carrier dopant in epitaxial growth GaSb base semiconductor laser structure, in laser structure
Concentration can not achieve effective control, while can not obtain high charge-carrier dopant concentration, and acquisition charge-carrier dopant concentration 1 ×
1019cm-3Or more it is extremely difficult.Although currently, realize GaSb sill high-concentration dopant in external document report,
Since doped source is mostly that multimeric forms exist, cause the effective mobility of carrier very low, to further influence GaSb
The output performance of laser of base semiconductor laser device, the output power of laser are only hundred milliwatt magnitudes, seriously limit this
The practical application of wave band GaSb base semiconductor laser, therefore, 2 mu m waveband GaSb base semiconductor laser device output powers are anxious
It needs to improve.It solves GaSb base semiconductor laser material N-shaped high carrier doping concentration and control is to realize 2 mu m waveband high powers
The matter of utmost importance of the GaSb base semiconductor laser device of laser output realizes to GaSb sill N-shaped high-dopant concentration it is high
One of the problem for needing to solve in power high-performance antimonide semiconductor laser epitaxial growth.
Summary of the invention
The present invention propose it is a kind of improve the material doped concentration of N-shaped GaSb base semiconductor laser method, this method be
When carrying out the growth of N-shaped GaSb base semiconductor laser material molecule beam epitaxy, by providing a kind of high temperature pyrolysis polymer
Device realizes effective cracking of polymer, solves the growth of N-shaped GaSb base semiconductor laser material epitaxy using Te and does doped source
The presence of polymer leads to doping concentration and the doping lower problem of quality when being doped material epitaxy growth, and the present invention proposes
This method carry out N-shaped GaSb base semiconductor laser material epitaxy growth when polymer doped source is effectively reduced, make more
Aggressiveness is cracked into monoatomic molecules doped source, realizes effective control to dopant material doping concentration, and improve dopant material
Epitaxial growth quality, to realize that 2 mu m waveband GaSb base semiconductor laser device of high power high-performance lays the foundation.
The present invention proposes that a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor laser, this method provide
A kind of doping furnace apparatus in a steady stream, this device can be to provide monoatomic molecules state when N-shaped GaSb sill epitaxial growth
Doped source, and this provenance furnace apparatus have needle-valve can the molecular beam line to source material regulate and control, this method into
Specific steps when row N-shaped GaSb sill epitaxial growth are as follows: 1. cleaning substrates, to lining before carrying out n-type doping Material growth
Bottom is handled, and the pollutant of substrate surface and the foreign gas of absorption are removed, after substrate surface preliminary treatment, outside
Prolong and carry out substrate surface oxide layer removal processing in growth apparatus, removes the oxide layer of substrate surface；2. by needed for epitaxial growth
The source furnace of each source material be warming up to respective required temperature；3. opening this hair in the case where fender plate is closed in a steady stream for doping
Designed needle valve switch 3~5 seconds on Te doped source pyrolysis furnace provided by bright, Te doped source is made sufficiently to be cracked into monatomic point
Sub- doped source；4. opening simultaneously the source fender plate in each source needed for epitaxial growth and the source fender plate of doped source, n-type doping material is carried out
The epitaxial growth of material.Using this doping furnace apparatus in a steady stream proposed by the present invention, the Te doped source of monoatomic molecules is obtained, finally
The epitaxial growth for realizing n-type doping GaSb material reaches and controls charge-carrier dopant concentration and improve dopant material crystal quality
Purpose.
The present invention proposes a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor laser, mentions in this method
Furnace apparatus is for generating the doped source line of monoatomic molecules state in a steady stream for a kind of doping out, and furnace apparatus has in a steady stream for this doping
The cracker that can be heated at high temperature, design has the needle-valve of adjustable doped source line on high-temperature heating cracker, leads to
It crosses control needle-valve and realizes the control for being used to be cracked into the doped source line size of monoatomic molecules state to doped source, institute of the present invention
Used doping furnace apparatus in a steady stream in the method for the material doped concentration of this raising N-shaped GaSb base semiconductor laser proposed
Including two parts, furnace part in a steady stream and doped source cracker part are respectively adulterated, the two devices pass through switching sealing
Flanged joint, the specific structure of this doping furnace in a steady stream include: 1. heating source power connections, 2. thermocouple connectors, 3. sealing flanges,
4. support rod, 5. thermocouples, 6. heating power supply lines, 7. heaters, 8.PBN crucible, 9. fixes sleeves, 10. cabinet heating source connectors,
11. cabinet thermocouple connector, 12. heating compartments, 13. box sealing flanges, 14. joint sealing flanges, 15. metering pin valves, 16. split
It is antipyretic to couple head, 17. cracking heating source power connections, 18. switching sealing flanges, 19. Pintsch process shells, 20. cracking perforation holes.
Wherein, it cracks at perforation hole and is cracked into the outlet after monoatomic molecules doped source for doped source, set in cracking source perforation hole front end
It is equipped with the retaining device that can control the outgoing of Te doped source molecular beam and close, which controls the opening of the source Te line
With closing.Using it is this doping in a steady stream furnace apparatus can obtain it is material doped required for N-shaped GaSb base semiconductor laser
The molecular beam of monoatomic molecules doped source state, preferred n-shaped doped source are Te.
The present invention proposes that a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor laser, this method utilize
A kind of doping for generating the doped source line of monoatomic molecules state proposed furnace apparatus in a steady stream, using Pintsch process
Method obtains the Te doped source of doping monoatomic molecules state used, solves tradition Te doped source and is mixed in the form of polymer
To inside dopant material, lead to the problem of doping concentration is low, dopant material epitaxial growth quality reduces, it is proposed by the present invention this
Method can ensure that doped source Te is incorporated into inside epitaxial material in the form of monoatomic molecules, doping concentration can reach 1 ×
1019cm-3Or more, reach the n for realizing that the production of 2 mu m waveband GaSb base semiconductor laser device of high power high-performance requires
Type adulterates GaSb material.
Detailed description of the invention
Fig. 1 is the furnace structure schematic diagram in a steady stream of doping used in the present invention.
Fig. 2 is used in the present invention for cracking the pyrolysis furnace structure chart of doped source.
Specific embodiment
Below by the drawings and specific embodiments, N-shaped GaSb base semiconductor is improved to this realization proposed by the invention
The technical solution of laser material doping concentration method is described in further detail.
The present invention proposes a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor laser, in this method with
The doped source molecular beam of monoatomic molecules state enables dopant material to be incorporated into monoatomic state as dopant material
It is described this to mix wherein need a kind of special source furnace apparatus for generating monoatomic molecules doped source line in dopant material
Miscellaneous furnace apparatus in a steady stream has the cracker that can be heated at high temperature, and design has adjustable doping on high-temperature heating cracker
The needle-valve of source line realizes the doped source line size for being used to be cracked into monoatomic molecules state to doped source by control needle-valve
Control, the doping of this special designing in a steady stream furnace apparatus by adulterating furnace part in a steady stream and doped source cracker part two
A part composition, the two devices pass through switching sealing flange connection.Doped source is done with Te with molecular beam epitaxy technique below, outside
Prolong growing n-type GaSb material to be described in detail for embodiment.
Fig. 1 show the furnace structure schematic diagram in a steady stream of doping used in the present invention, and furnace structure specifically includes in a steady stream for the doping
Heating source power connection (1), thermocouple connector (2), sealing flange (3), support rod (4), thermocouple (5), heating power supply line (6) add
Hot device (7), PBN crucible (8), fixes sleeve (9).Fig. 2 is shown used in the present invention for cracking the pyrolysis furnace of doped source
Structure chart, the cracking furnace structure specifically include cabinet heating source connector (10), cabinet thermocouple connector (11), heating compartment (12),
Box sealing flange (13), joint sealing flange (14), metering pin valve (15) crack thermocouple connector (16), cracking heating source electricity
Source connector (17) is transferred sealing flange (18), and Pintsch process shell (19) cracks perforation hole (20).Wherein, doping in a steady stream furnace with split
Furnace is solved by switching sealing flange connection, furnace sealing flange (3) is connect with the box sealing flange (13) of pyrolysis furnace in a steady stream for doping
Constitute the doping of the invention for generating monoatomic molecules doped source line furnace apparatus in a steady stream.
Realize that the specific implementation step of the N-shaped GaSb material of high carrier doping concentration in the present embodiment is as follows:
Step 1: carrying out the epitaxial growth of N-shaped GaSb material using molecular beam epitaxy (MBE) technology, and substrate selects GaSb
Substrate is handled GaSb substrate before carrying out the growth of N-shaped GaSb material epitaxy.
Firstly, substrate is loaded in molecular beam epitaxy system for fixing on the fixture of substrate and being sent into Sample Room, into
Specimen chamber is evacuated to 3.0 × 10-6Torr~3.0 × 10-7This vacuum environment range of Torr, vacuum degree heat up after reaching requirement
It to 200 DEG C~210 DEG C, handles substrate 90~120 minutes, preliminary removal is adsorbed on the impurity such as gas, the steam of substrate surface；
After Sample Room preliminary treatment substrate, substrate is sent to surge chamber and starts that substrate is further processed, delayed
It rushes room vacuum environment and requires to be 3.0 × 10-8Torr~9.0 × 10-9Torr, handles the time 90 by 400 DEG C~405 DEG C for the treatment of temperature
~120 minutes, further the foreign gas of removal absorption on substrate, improved substrate surface clean-up performance；
Finally, substrate is sent to growth room, substrate surface is removed in growth room after the removal of impurity on substrate surface gas
Oxide layer, growth room's vacuum environment require reach 9.0 × 10-10Torr~3.0 × 10-10Torr, GaAs liner oxidation layer are gone
Except 635 DEG C of temperature of processing, under high electron energy diffractometer (RHEED) monitoring at the removal of progress GaAs substrate surface oxide layer
Reason shows that oxide layer processing is completed until clearly diffraction fringe occurs.
Step 2: the growth rate of each layer epitaxial material is tested.It is successively carried out on the substrate of test vector generation for testing IC rate each
The growth of layer epitaxial material, growth temperature, the line in each source, V-III line obtain the optimal of these materials than these parameters
Growth parameter(s), the optimal epitaxial growth conditions parameter obtained when epitaxial laser structure using test, epitaxial material
Growth rate obtained by RHEED monitoring calculation, RHEED monitoring under successively obtain in layers of material epitaxial process
The epitaxial growth rate of layers of material is calculated by the RHEED oscillating curve data information of test for RHEED oscillating curve.
Step 3: the molecular beam epitaxy of the N-shaped GaSb material of Te doping is carried out on step 1 treated GaSb substrate
Growth.Furnace is warming up to respective required temperature in a steady stream by the source Ga, the source Sb needed for growing n-type GaSb and doped source Te, and Ga source temperature is
1000 DEG C, the source Sb cracking temperature is set as 900 DEG C, and furnace temperature is 200 DEG C to doped source Te in a steady stream, and the cracking furnace temperature in the source Te is
520 DEG C, 515 DEG C of N-shaped GaSb epitaxial growth temperature, the epitaxial growth rate of N-shaped GaSb is 0.6ML/s, V/III line than 2~
8, preferably V/III line ratio is 6.Before carrying out N-shaped GaSb epitaxial growth, make each source furnace flapper closure, opens institute of the present invention
Needle-valve 3~5 seconds be arranged on the Te doped source cracking source of offer, make Te doped source sufficiently be cracked into monoatomic molecules doped source,
This is the committed step in the material doped concentration method of a kind of raising N-shaped GaSb base semiconductor laser proposed by the invention,
Wherein the cracker of Te doped source is special device designed by monoatomic molecules state Te doped source provided by the present invention.So
The source fender plate in the source Ga, the source Sb and Te doped source is opened simultaneously afterwards, starts the epitaxial growth for carrying out N-shaped GaSb.
Step 4: under RHEED monitoring, extension is carried out according to designed N-shaped GaSb material epitaxy growth optimized parameter
Growth growth time 30 minutes, growth thickness about 300nm, after epitaxial growth, closes each fender plate in a steady stream, and will be each
Source furnace cooling, while growth room cool down, wait cool down after by epitaxial wafer successively from growth room, surge chamber, Sample Room transmit, most
After take out, the N-shaped GaSb material obtained to epitaxial growth carries out electrical testing and X-ray double crystal diffraction curve test, characterizes institute
The charge-carrier dopant concentration of extension N-shaped GaSb and the crystal quality of epitaxial material.
Realize that a kind of the application raising N-shaped GaSb base semiconductor laser material claimed is mixed by above step
The method of miscellaneous concentration, this method can get the N-shaped GaSb material of high-dopant concentration, realize that charge-carrier dopant concentration meets device system
The N-shaped GaSb material of standby requirement, this method high carrier concentration obtained has preferable crystal quality.The present invention is mentioned
This method out, should by using a kind of doping for generating the doped source line of monoatomic molecules state furnace apparatus in a steady stream
Device is formed by adulterating furnace part in a steady stream and doped source cracker part, and design has needle-valve in cracking source device, designed
Needle-valve for controlling doped source beam intensity to enabling doped source to be sufficiently cracked into monoatomic molecules, this method passes through benefit
With the source furnace apparatus of special designing, monoatomic molecules Te doped source beam used when adulterating is obtained using the method for Pintsch process
Stream, solving tradition Te doped source, doping concentration is low, dopant material due to inside incorporation dopant material, being caused in the form of polymer
The problem of epitaxial growth quality reduces, this method proposed by the present invention may insure doped source Te in the form of monoatomic molecules
It is incorporated into inside epitaxial material, charge-carrier dopant concentration can reach 1 × 1019cm-3Or more, reach dosed carrier concentration
Realize the production requirement of 2 mu m waveband GaSb base semiconductor laser device of high power high-performance.
Claims (2)
1. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor laser, which is characterized in that this method utilizes one
Kind high temperature pyrolysis device generates monoatomic molecules form Te doped source molecular beam, the high temperature pyrolysis device and doped source
Source furnace combines composition doped source molecular beam generation device, and design has needle-valve on the high temperature pyrolysis device, passes through adjusting
The needle-valve can control that furnace is ejected into the intensity of doped source molecular beam line in high temperature pyrolysis device in a steady stream from doping, realize
Incoming polymer Te doped source will be sprayed from doping in a steady stream furnace in high temperature pyrolysis device be sufficiently cracked into monatomic point
The Te doped source of sub- form is obtained for monoatomic molecules shape used in epitaxial growth N-shaped GaSb base semiconductor laser material
Needle-valve on Te doped source cracker is opened 3 first before being doped material epitaxy growth by the Te molecular beam of formula
So that the source Te of multimeric forms is sufficiently cracked into the Te molecular beam of monoatomic molecules form, then opens each
The epitaxial growth of source fender plate progress N-shaped GaSb base semiconductor laser material.
2. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor laser as described in claim 1, feature
It is, the Te doped source of monoatomic molecules form is generated in high temperature pyrolysis device, and the high temperature pyrolysis device is to the source Te
Cracking temperature is 300 DEG C~600 DEG C.
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| CN201810006341.8A CN108183391B (en) | 2018-01-04 | 2018-01-04 | A method of improving the material doped concentration of N-shaped GaSb base semiconductor laser |
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| CN201810006341.8A CN108183391B (en) | 2018-01-04 | 2018-01-04 | A method of improving the material doped concentration of N-shaped GaSb base semiconductor laser |
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| CN108183391B true CN108183391B (en) | 2019-09-27 |
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| CN1025526C (en) * | 1992-12-15 | 1994-07-20 | 中国科学院上海技术物理研究所 | Blue-green semiconductor laser material and its preparation method |
| US8076700B2 (en) * | 2008-06-10 | 2011-12-13 | The United States Of America As Represented By The Secretary Of The Navy | P-N junction for use as an RF mixer from GHZ to THZ frequencies |
| GB0821122D0 (en) * | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
| CN102660775A (en) * | 2012-04-24 | 2012-09-12 | 长春理工大学 | Method for treating GaSb substrate by using two-step method of sulfur passivation and rapid thermal annealing |
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