CN108183391A - A kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers - Google Patents
A kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers Download PDFInfo
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- CN108183391A CN108183391A CN201810006341.8A CN201810006341A CN108183391A CN 108183391 A CN108183391 A CN 108183391A CN 201810006341 A CN201810006341 A CN 201810006341A CN 108183391 A CN108183391 A CN 108183391A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
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Abstract
The invention discloses a kind of methods for improving N-shaped GaSb base semiconductor laser material carrier doping concentrations.This method in doping in a steady stream stove by setting pyrolysis device to realize that polymer doped source is cracked into monoatomic molecules, doped source is made to be doped to material internal in the form of monoatomic molecules, involved pyrolysis device is equipped with needle-valve, the needle-valve can control the polymer doped source of proper strength to enter pyrolysis device, and the doped source of multimeric forms is made fully to be cracked into monoatomic molecules form in cracker.This method disclosed by the invention obtains the Te molecular beams of monoatomic molecules using the doped source pyrolysis device of special designing, solve the problems, such as tradition Te sources with caused by multimeric forms doping doping concentration is low, material epitaxy is ropy, can realize that doping concentration reaches 1 × 10 in the form of Te monoatomic molecules19cm‑3More than and, meet the requirement of 2 mu m waveband GaSb base semiconductor lasers element manufacturings.
Description
Technical field
The present invention relates to semiconductor laser material fields, and more particularly to one kind is by cracking polymer doped chemical, shape
It is adulterated into monoatomic molecules, improves the charge-carrier dopant concentration and epitaxial material of N-shaped GaSb base semiconductor laser dopant materials
The epitaxial growth method and device of crystal quality.
Background technology
Semiconductor laser have many advantages, such as small, light-weight, long lifespan, it is at low cost, be easy to mass production, extensively should
For opto-electronics, it has also become the core devices of current photoelectron scientific domain.Semiconductor laser laser ranging, swash
Optical radar, laser analog weapon, laser alertness, laser guidance tracking, ignition and blasting, automatically controls, detecting instrument laser communication
Etc. have been widely used, form wide market.It is brilliant with GaSb materials in GaSb base semiconductor laser materials
The matched ternary of lattice, the spectral region of quaternary alloy material are examined between 1.5~4.3 μm in fiber optic communication, gas characteristic spectral line
Survey and biochemical product detection etc. have very wide application prospect, and at present, GaSb sills are widely used in preparing
The laser and detector of infrared optical fiber transmission.In addition, the electron mobility of GaSb materials is more much higher than GaAs material so that it
There is good application prospect in terms of microwave device is made.But there is no the high-performance of 2 mu m waveband of output wavelength in China
GaSb base semiconductor lasers, and it is relatively low in the output power of the semiconductor laser of the wave band in the world, and only 300mW is left
It is right.
2 mu m waveband GaSb base semiconductor laser devices can not achieve high-performance high power laser light output the main reason for be
Since in epitaxial growth GaSb base semiconductor laser structures, the N-shaped doped layer material carrier in laser structure adulterates
Concentration can not achieve effective control, while can not obtain high charge-carrier dopant concentration, and acquisition charge-carrier dopant concentration 1 ×
1019cm-3It is and above extremely difficult.At present, although realizing GaSb sill high-concentration dopants in external document report,
Since doped source is mostly that multimeric forms exist, the effective mobility for leading to carrier is very low, so as to further influence GaSb
The output performance of laser of base semiconductor laser device, the output power of laser is only hundred milliwatt magnitudes, seriously limits this
The practical application of wave band GaSb base semiconductor lasers, therefore, 2 mu m waveband GaSb base semiconductor lasers device output powers are anxious
It needs to improve.It is to realize 2 mu m waveband high powers to solve GaSb base semiconductor laser material N-shaped high carrier doping concentrations and control
The matter of utmost importance of the GaSb base semiconductor laser devices of laser output realizes to GaSb sill N-shaped high-dopant concentrations it is high
One of problem solved is needed in power high-performance antimonide semiconductor laser epitaxial growth.
Invention content
The present invention propose it is a kind of improve the material doped concentration of N-shaped GaSb base semiconductor lasers method, this method be
When carrying out the growth of N-shaped GaSb base semiconductor laser material molecules beam epitaxy, by providing a kind of high temperature pyrolysis polymer
Device realizes effective cracking of polymer, solves the growth of N-shaped GaSb base semiconductor lasers material epitaxy and does doped source using Te
The presence of polymer leads to the problem of doping concentration and relatively low doping quality when being doped material epitaxy growth, and the present invention proposes
This method carry out N-shaped GaSb base semiconductor lasers material epitaxy growth when effectively reduce polymer doped source, make more
Aggressiveness is cracked into monoatomic molecules doped source, realizes effective control to dopant material doping concentration, and improve dopant material
Epitaxial growth quality, to realize that 2 mu m waveband GaSb base semiconductor laser devices of high power high-performance lay the foundation.
The present invention proposes a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers, and this method provides
Furnace apparatus, this device can be to provide monoatomic molecules state during N-shaped GaSb sill epitaxial growths in a steady stream for a kind of doping
Doped source, and this introduces a collection furnace apparatus have needle-valve the molecular beam line of source material can be regulated and controled, this method into
During row N-shaped GaSb sill epitaxial growths the specific steps are：1. substrate is cleaned, to lining before the growth of N-shaped dopant material is carried out
Bottom is handled, and removes the pollutant of substrate surface and the foreign gas of absorption, after substrate surface preliminary treatment, outside
Substrate surface oxide layer removal processing is carried out in epitaxial growth equipment, removes the oxide layer of substrate surface；2. by needed for epitaxial growth
The source stove of each source material be warming up to respective required temperature；In the case that 3. fender plate is closed in a steady stream in doping, this hair is opened
Needle valve switch designed by bright provided Te doped source pyrolysis furnaces 3~5 seconds, makes Te doped sources fully be cracked into monatomic point
Sub- doped source；4. opening simultaneously the source fender plate in each source needed for epitaxial growth and the source fender plate of doped source, N-shaped doping material is carried out
The epitaxial growth of material.Using this doping furnace apparatus in a steady stream proposed by the present invention, the Te doped sources of monoatomic molecules are obtained, finally
It realizes the epitaxial growth of N-shaped doping GaSb materials, reaches and control charge-carrier dopant concentration and improve dopant material crystal quality
Purpose.
The present invention proposes a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers, is carried in this method
Go out a kind of doped source line for adulterating furnace apparatus in a steady stream and being used to generate monoatomic molecules state, furnace apparatus has in a steady stream for this doping
The cracker that can be heated at high temperature is designed with the needle-valve that can adjust doped source line on high-temperature heating cracker, leads to
Cross the control that control needle-valve realizes the doped source line size for being used to be cracked into monoatomic molecules state to doped source, institute of the present invention
Used doping furnace apparatus in a steady stream in the method for the material doped concentration of this raising N-shaped GaSb base semiconductor lasers proposed
Including two parts, stove part in a steady stream and doped source cracker part are respectively adulterated, the two devices are sealed by transferring
Flanged joint, this concrete structure for adulterating stove in a steady stream include：1. heating source power connection, 2. thermocouple connectors, 3. sealing flanges,
4. supporting rod, 5. thermocouples, 6. heating power supply lines, 7. heaters, 8.PBN crucibles, 9. fixes sleeves, 10. babinet heating source connectors,
11. babinet thermocouple connector, 12. heating compartments, 13. box sealing flanges, 14. joint sealing flanges, 15. metering pin valves, 16. split
It is antipyretic to couple head, 17. cracking heating source power connections, 18. switching sealing flanges, 19. Pintsch process shells, 20. cracking perforation holes.
Wherein, it cracks at perforation hole and is cracked into the outlet after monoatomic molecules doped source for doped source, set in cracking source perforation hole front end
It is equipped with the retaining device that can be controlled the outgoing of Te doped sources molecular beam and close, the opening of retaining device control Te sources line
With closing.Using it is this doping in a steady stream furnace apparatus can obtain it is material doped required for N-shaped GaSb base semiconductor lasers
The molecular beam of monoatomic molecules doped source state, preferred n-shaped doped source are Te.
The present invention proposes a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers, and this method utilizes
What is proposed is a kind of for generating the doping of the doped source line of monoatomic molecules state furnace apparatus in a steady stream, using Pintsch process
Method obtains the Te doped sources of doping monoatomic molecules state used, solves tradition Te doped sources and is mixed in the form of polymer
To inside dopant material, lead to the problem of doping concentration is low, dopant material epitaxial growth quality reduces, it is proposed by the present invention this
Method can ensure that doped source Te is incorporated into the form of monoatomic molecules inside epitaxial material, doping concentration can reach 1 ×
1019cm-3More than and, reach the n for the making requirement for realizing 2 mu m waveband GaSb base semiconductor laser devices of high power high-performance
Type adulterates GaSb materials.
Description of the drawings
Fig. 1 is the doping furnace structure schematic diagram in a steady stream used in the present invention.
Fig. 2 is the pyrolysis furnace structure chart for being used to crack doped source used in the present invention.
Specific embodiment
Below by the drawings and specific embodiments, N-shaped GaSb base semiconductors are improved to this realization proposed by the invention
The technical solution of laser material doping concentration method is described in further detail.
The present invention proposes a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers, in this method with
The doped source molecular beam of monoatomic molecules state enables dopant material to be incorporated into monoatomic state as dopant material
It is described this to mix wherein need a kind of special source furnace apparatus for generating monoatomic molecules doped source line in dopant material
Miscellaneous furnace apparatus in a steady stream has the cracker that can be heated at high temperature, and doping can be adjusted by being designed on high-temperature heating cracker
The needle-valve of source line, by the way that needle-valve realization is controlled to be used to be cracked into the doped source line size of monoatomic molecules state to doped source
Control, the doping of this special designing in a steady stream furnace apparatus by adulterating stove part in a steady stream and doped source cracker part two
A part composition, the two devices are connected by sealing flange of transferring.Doped source is done with Te with molecular beam epitaxy technique below, outside
Epitaxial growth N-shaped GaSb materials are described in detail for embodiment.
Fig. 1 show doping used in present invention furnace structure schematic diagram in a steady stream, and furnace structure specifically includes in a steady stream for the doping
Heating source power connection (1), thermocouple connector (2), sealing flange (3), supporting rod (4), thermocouple (5), heating power supply line (6) add
Hot device (7), PBN crucibles (8), fixes sleeve (9).Fig. 2 show the pyrolysis furnace for being used to crack doped source used in the present invention
Structure chart, the cracking furnace structure specifically include babinet heating source connector (10), babinet thermocouple connector (11), heating compartment (12),
Box sealing flange (13), joint sealing flange (14), metering pin valve (15), cracking thermocouple connector (16), cracking heating source electricity
Source connector (17), switching sealing flange (18), Pintsch process shell (19), cracking perforation hole (20).Wherein, doping in a steady stream stove with splitting
Solution stove is connected by sealing flange of transferring, and stove sealing flange (3) is connect with the box sealing flange (13) of pyrolysis furnace in a steady stream for doping
The present invention is formed for generating the doping of monoatomic molecules doped source line furnace apparatus in a steady stream.
Realize that the specific implementation step of the N-shaped GaSb materials of high carrier doping concentration in the present embodiment is as follows：
Step 1：The epitaxial growth of N-shaped GaSb materials, substrate selection GaSb are carried out using molecular beam epitaxy (MBE) technology
Substrate before the growth of N-shaped GaSb material epitaxies is carried out, is handled GaSb substrates.
First, substrate is loaded in molecular beam epitaxy system for fixing on the fixture of substrate and being sent into Sample Room, into
Specimen chamber is evacuated to 3.0 × 10-6Torr~3.0 × 10-7This vacuum environment range of Torr, vacuum degree heat up after reaching requirement
To 200 DEG C~210 DEG C, processing substrate 90~120 minutes, preliminary removal absorption is in impurity such as gas, the steam of substrate surface；
After Sample Room preliminary treatment substrate, substrate is sent to surge chamber and starts that substrate is further processed, delayed
It is 3.0 × 10 to rush room vacuum environment requirement-8Torr~9.0 × 10-9Torr, 400 DEG C~405 DEG C for the treatment of temperature, processing time 90
~120 minutes, further the foreign gas of removal absorption on substrate, improved substrate surface clean-up performance；
Finally, after the removal of impurity on substrate surface gas, substrate is sent to growth room, substrate surface is removed in growth room
Oxide layer, growth room's vacuum environment require reach 9.0 × 10-10Torr~3.0 × 10-10Torr, GaAs liner oxidation layer are gone
Except 635 DEG C of the temperature of processing, at the removal that GaAs substrate surface oxide layers are carried out under high electron energy diffractometer (RHEED) monitoring
Reason until clearly diffraction fringe occurs, shows that oxide layer processing is completed.
Step 2：Test the growth rate of each layer epitaxial material.It is carried out successively on the substrate of test vector generation for testing IC rate each
The growth of layer epitaxial material, growth temperature, the line in each source, V-III lines obtain the optimal of these materials than these parameters
Growth parameter(s), the optimal epitaxial growth conditions parameter that during epitaxial laser structure using test when obtains, epitaxial material
Growth rate obtained by RHEED monitoring calculations, in obtaining layers of material epitaxial process successively under RHEED monitorings
The epitaxial growth rate of layers of material is calculated by the RHEED oscillating curve data informations of test in RHEED oscillating curves.
Step 3：The molecular beam epitaxy of the N-shaped GaSb materials of Te doping is carried out on step 1 treated GaSb substrates
Growth.Stove is warming up to respective required temperature in a steady stream for Ga sources, Sb sources and doped source Te needed for growing n-type GaSb, and Ga source temperatures are
1000 DEG C, Sb sources cracking temperature is set as 900 DEG C, and furnace temperature is 200 DEG C to doped source Te in a steady stream, and the cracking furnace temperature in Te sources is
520 DEG C, 515 DEG C of N-shaped GaSb epitaxial growth temperatures, the epitaxial growth rate of N-shaped GaSb is 0.6ML/s, V/III lines than 2~
8, preferably V/III lines ratio is 6.Before N-shaped GaSb epitaxial growths are carried out, make each source stove flapper closure, open institute of the present invention
The needle-valve set on the Te doped source cracking source of offer 3~5 seconds, makes Te doped sources fully be cracked into monoatomic molecules doped source,
This is the committed step in the material doped concentration method of a kind of raising N-shaped GaSb base semiconductor lasers proposed by the invention,
Wherein special device of the cracker of Te doped sources designed by monoatomic molecules state Te doped sources provided by the present invention.So
The source fender plate in Ga sources, Sb sources and Te doped sources is opened simultaneously afterwards, proceeds by the epitaxial growth of N-shaped GaSb.
Step 4：Under RHEED monitorings, extension is carried out according to designed N-shaped GaSb material epitaxies growth optimized parameter
Growth, growth time 30 minutes, growth thickness about 300nm after epitaxial growth, close each fender plate, and will be each in a steady stream
Source stove cooling, while growth room cools down, and waits to transmit epitaxial wafer from growth room, surge chamber, Sample Room successively after cooling down, most
After take out, the N-shaped GaSb materials obtained to epitaxial growth carry out electrical testing and X ray double crystal diffraction curve is tested, and characterize institute
The charge-carrier dopant concentration of extension N-shaped GaSb and the crystal quality of epitaxial material.
Realize that a kind of the application raising N-shaped GaSb base semiconductor laser materials claimed are mixed by above step
The method of miscellaneous concentration, this method can obtain the N-shaped GaSb materials of high-dopant concentration, realize that charge-carrier dopant concentration meets device system
Standby requirement, the N-shaped GaSb materials for the high carrier concentration that this method is obtained have preferable crystal quality.The present invention is carried
This method gone out, for generating the doping of the doped source line of monoatomic molecules state furnace apparatus in a steady stream, is somebody's turn to do by using a kind of
Device is formed by adulterating stove part in a steady stream and doped source cracker part, and needle-valve is designed in cracking source device, designed
Needle-valve so as to which doped source be enable fully to be cracked into monoatomic molecules, this method passes through profit for controlling doped source beam intensity
With the source furnace apparatus of special designing, monoatomic molecules Te doped source beams used when adulterating are obtained using the method for Pintsch process
Stream, solving tradition Te doped sources, doping concentration is low, dopant material due to inside incorporation dopant material, being caused in the form of polymer
The problem of epitaxial growth quality reduces, this method proposed by the present invention may insure doped source Te in the form of monoatomic molecules
It is incorporated into inside epitaxial material, charge-carrier dopant concentration can reach 1 × 1019cm-3More than and, reach dosed carrier concentration
Realize the making requirement of 2 mu m waveband GaSb base semiconductor laser devices of high power high-performance.
Claims (7)
- A kind of 1. method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers, which is characterized in that this method utilizes one Kind high temperature pyrolysis device generates monoatomic molecules form Te doped source molecular beams, the high temperature pyrolysis device and doped source Source stove combines composition doped source molecular beam generation device, is designed with needle-valve on the high temperature pyrolysis device, passes through adjusting The needle-valve can control that stove is ejected into the intensity of doped source molecular beam line in high temperature pyrolysis device in a steady stream from doping, realize Incoming polymer Te doped sources, which will be sprayed, in high temperature pyrolysis device from doping in a steady stream stove is fully cracked into monatomic point The Te doped sources of sub- form are obtained for the monoatomic molecules shape used in epitaxial growth N-shaped GaSb base semiconductor laser materials Needle-valve on Te doped source crackers is opened 3 by the Te molecular beams of formula first before material epitaxy growth is doped The Te sources of multimeric forms is enable within~5 seconds to be fully cracked into the Te molecular beams of monoatomic molecules form, are then opened each Source fender plate carries out the epitaxial growth of N-shaped GaSb base semiconductor laser materials, this method proposed by the invention by using Pyrolysis device obtains the doped source line of the Te monoatomic molecules, and the Te doped sources of this monoatomic molecules form are used In the GaSb base semiconductor laser materials of epitaxial growth N-shaped doping, proposed by the invention this solves traditional Te Doped source cannot be heated at high temperature in the stove of source, solve Te doped source source oven temperature degree it is low when Te doped sources with the shape of polymer Formula is incorporated into inside dopant material, causes the problem of epitaxial material doping concentration is low, epitaxial material crystal quality is low, the present invention carries This method gone out can be by adjusting the cracking temperature of needle-valve and high temperature pyrolysis device on the high temperature pyrolysis device And adulterate the heating temperature of stove in a steady stream, it is ensured that the material doped doped source Te used of N-shaped GaSb base semiconductor lasers is with single original The form of sub- molecule is incorporated into inside epitaxial material, it is proposed by the present invention this solves due to polymer Te is adulterated when lead The doping concentration of cause and crystalline quality of material problem, this raising N-shaped GaSb base semiconductor laser materials proposed by the present invention The Te molecular beams of the method for charge-carrier dopant concentration monoatomic molecules form, which are doped, can reach charge-carrier dopant concentration To 1 × 1019cm-3More than and, meet the making requirement of 2 mu m waveband GaSb base semiconductor laser devices of high power high-performance.
- 2. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers as described in claim 1, feature It is, this method realizes that the doped source of N-shaped GaSb base semiconductor laser materials is Te, and the Te doped sources are monoatomic molecules Form, the Te doped sources in the form of monoatomic molecules are incorporated into inside epitaxial material, realize higher charge-carrier dopant concentration and The epitaxial growth of the N-shaped GaSb base semiconductor laser materials of higher crystal quality.
- 3. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers as described in claim 1, feature It is, the Te doped sources of the monoatomic molecules form used in this method are obtained by high temperature pyrolysis device, the high temperature hot tearing Solution device is bonded the generation device of Te doped sources with doped source stove, by the Te of multimeric forms in high temperature pyrolysis device Source is cracked into the Te doped source molecular beams of monoatomic molecules form, for the doped source used in the base and doped materials of N-shaped GaSb.
- 4. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers as described in claim 1, feature It is, is designed with needle-valve on the high temperature pyrolysis device of the Te doped sources of monoatomic molecules form for generating, the needle-valve can To control and adjust, from doping, stove to the beam intensity of the polymer Te doped sources in high temperature pyrolysis device, passes through adjusting in a steady stream The needle-valve obtains the Te for from the doping polymer Te doped source lines of desired flow that stove ejects in a steady stream, making multimeric forms Doped source can fully be cracked into the Te doped source lines of monoatomic molecules form in high temperature pyrolysis device, be given birth to for extension Long higher carrier concentration and the N-shaped GaSb base semiconductor laser materials compared with high-crystal quality.
- 5. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers as described in claim 1, feature It is, the needle-valve on doped source cracker is opened 3~5 seconds first before epitaxial growth is doped, makes polymer Te sources It is fully cracked in high temperature pyrolysis device, it is ensured that Te sources are monoatomic molecules form during epitaxial growth, then open extension institute The baffle of each stove in a steady stream is needed to carry out the epitaxial growth of N-shaped GaSb base semiconductor laser materials.
- 6. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers as described in claim 1, feature It is, the Te doped sources of monoatomic molecules form are generated in high temperature pyrolysis device, and the described high temperature pyrolysis device is to Te sources Cracking temperature be 300 DEG C~600 DEG C.
- 7. a kind of method for improving the material doped concentration of N-shaped GaSb base semiconductor lasers as described in claim 1, feature It is, by using this method proposed by the invention, by the use of the Te of monoatomic molecules form as doped source, makes the doped source It can be incorporated into inside epitaxial material in the form of monoatomic molecules, charge-carrier dopant concentration is made to reach 1 × 1019cm-3More than and Relatively high-crystal quality N-shaped GaSb base semiconductor laser materials, further meet 2 mu m waveband GaSb bases of high power high-performance Semiconductor laser makes the requirement to N-shaped doping GaSb materials.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1075831A (en) * | 1992-12-15 | 1993-09-01 | 中国科学院上海技术物理研究所 | A kind of blue-green semiconductor laser material and preparation method thereof |
| US20090302352A1 (en) * | 2008-06-10 | 2009-12-10 | The Government Of The United States Of America, As Represenied By The Secretary Of The Navy | P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies |
| CN102217106A (en) * | 2008-11-19 | 2011-10-12 | 纳米技术有限公司 | Semiconductor nanoparticle-based light emitting devices and associated materials and methods |
| CN102660775A (en) * | 2012-04-24 | 2012-09-12 | 长春理工大学 | Method for treating GaSb substrate by using two-step method of sulfur passivation and rapid thermal annealing |
-
2018
- 2018-01-04 CN CN201810006341.8A patent/CN108183391B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1075831A (en) * | 1992-12-15 | 1993-09-01 | 中国科学院上海技术物理研究所 | A kind of blue-green semiconductor laser material and preparation method thereof |
| US20090302352A1 (en) * | 2008-06-10 | 2009-12-10 | The Government Of The United States Of America, As Represenied By The Secretary Of The Navy | P-N Junction for Use as an RF Mixer from GHZ to THZ Frequencies |
| CN102217106A (en) * | 2008-11-19 | 2011-10-12 | 纳米技术有限公司 | Semiconductor nanoparticle-based light emitting devices and associated materials and methods |
| CN102660775A (en) * | 2012-04-24 | 2012-09-12 | 长春理工大学 | Method for treating GaSb substrate by using two-step method of sulfur passivation and rapid thermal annealing |
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