CN108183155B

CN108183155B - Semiconductor light emitting device

Info

Publication number: CN108183155B
Application number: CN201711274926.XA
Authority: CN
Inventors: 金台勋; 金载润; 成永圭; 龙戡翰; 李东烈; 李守烈
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2016-12-08
Filing date: 2017-12-06
Publication date: 2021-08-31
Anticipated expiration: 2037-12-06
Also published as: KR20180066379A; KR102601553B1; CN108183155A; US20180166618A1; US10199551B2

Abstract

The semiconductor light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked. The connection electrode is positioned on the light emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first semiconductor layer and the second semiconductor layer. The under bump metal pattern is on the connection electrode. The connection terminal is located on the under bump metal pattern. The connection metal layer includes a first metal element. The thermal conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reaction rate of the first metal element with the second metal element is lower than a second reaction rate of gold (Au) with the second metal element.

Description

Semiconductor light emitting device

Cross Reference to Related Applications

This application claims priority from korean patent application No. 10-2016-.

Technical Field

Exemplary embodiments of the inventive concept relate to semiconductors, and more particularly, to semiconductor light emitting devices.

Background

A semiconductor light emitting device such as a light emitting diode may be a device including a light emitting material. In the semiconductor light emitting device, electrons and holes of the junction type semiconductor may recombine with each other to generate energy, and the generated energy may be converted into light. The converted light may be emitted from the semiconductor light emitting device. Light emitting diodes may be used in lighting devices, display devices and light sources. As an example, gallium nitride (GaN) based light emitting diodes may be used in keypads for portable phones, turn signal lamps, and flash lamps for cameras.

The semiconductor light emitting device may include an electrical connection structure (e.g., a solder ball or bump) that may be electrically connected to other semiconductor devices and/or a printed circuit board.

Disclosure of Invention

Exemplary embodiments of the inventive concept provide a semiconductor light emitting device having enhanced reliability.

According to an exemplary embodiment of the inventive concept, a semiconductor light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked. The connection electrode is positioned on the light emitting structure. The connection electrode includes a connection metal layer electrically connected to at least one of the first semiconductor layer and the second semiconductor layer. An Under Bump Metallurgy (UBM) pattern is on the connection electrode. The connection terminal is located on the UBM pattern. The connection metal layer includes a first metal element. The thermal conductivity of the first metal element is higher than that of gold (Au). The connection terminal includes a second metal element. A first reaction rate of the first metal element with the second metal element is lower than a second reaction rate of gold (Au) with the second metal element.

According to an exemplary embodiment of the inventive concept, a semiconductor light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked. The connection electrode is on the light emitting structure. The UBM pattern is on the connection electrode. The protective insulating layer is disposed on the connection electrode and spaced apart from the UBM pattern along an upper surface of the connection electrode. The connection terminal is disposed on the UBM pattern. The connection terminal is in contact with the connection electrode. The connection electrode includes a connection metal layer electrically connected to at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is disposed between the connection metal layer and the UBM pattern and extends between the UBM pattern and the protective insulating layer.

According to an exemplary embodiment of the inventive concept, a semiconductor light emitting device includes a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked. The connection metal layer is positioned over the light emitting structure and electrically connected to at least one of the first semiconductor layer and the second semiconductor layer. The UBM pattern is on the connection metal layer. The protective insulating layer is on the connection metal layer and includes an opening partially exposing a top surface of the UBM pattern. The connection terminal is disposed on a top surface of the UBM pattern exposed through the opening. The connection metal layer includes a first metal element having a thermal conductivity higher than that of gold (Au). The connection terminal includes a second metal element. A first reaction rate of the first metal element with the second metal element is lower than a second reaction rate of gold (Au) with the second metal element.

Drawings

The above and other features of the present inventive concept will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:

fig. 1 is a schematic cross-sectional view illustrating an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 2A, 2B, 2C and 2D are enlarged views corresponding to a portion "a" of fig. 1, respectively;

fig. 3, 5 and 6 are schematic cross-sectional views respectively illustrating an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 4A, 4B, and 4C are enlarged views corresponding to a portion "a" of fig. 3, respectively;

fig. 7 and 8 are schematic cross-sectional views respectively illustrating an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 9A to 9E are sectional views illustrating a method of forming an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 10A and 10B are sectional views illustrating a method of forming an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 11A to 11C are sectional views illustrating a method of forming an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 12 is a schematic plan view illustrating a semiconductor light emitting device according to an exemplary embodiment of the inventive concept;

fig. 13 to 16 are sectional views taken along line I-I' of fig. 12;

fig. 17 is a schematic plan view illustrating a semiconductor light emitting device according to an exemplary embodiment of the inventive concept; and

fig. 18 and 19 are schematic cross-sectional views respectively illustrating semiconductor light emitting device packages according to exemplary embodiments of the inventive concept.

Detailed Description

Exemplary embodiments of the inventive concept will be described in more detail below with reference to the accompanying drawings. In this regard, the inventive concept may have different forms and should not be construed as being limited to the exemplary embodiments of the inventive concept described herein. In the description and drawings, like reference numerals may refer to like elements.

It will be understood that the spatially relative terms may include different orientations of the device in use or operation in addition to the orientation depicted in the specification and drawings.

A semiconductor light emitting device according to an exemplary embodiment of the inventive concept may include a light emitting structure and a plurality of electrical connection members disposed on the light emitting structure. The electrical connection member may electrically connect the light emitting structure to an external circuit. An electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept will be described below with reference to the accompanying drawings.

Fig. 1 is a schematic cross-sectional view illustrating an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept. Fig. 2A, 2B, 2C, and 2D are enlarged views corresponding to a portion "a" of fig. 1, respectively.

Referring to fig. 1, the electrical connection part 11 of the semiconductor light emitting device according to an exemplary embodiment of the inventive concept may include a connection electrode 140, an Under Bump Metal (UBM) pattern 160 (which may be referred to herein as "UBM pattern 160"), and a connection terminal 170. In an exemplary embodiment of the inventive concept, the connection terminal 170 may include an intermetallic compound 172 and a solder bump 174.

The connection electrode 140 may be electrically connected to at least one semiconductor layer (e.g., the first semiconductor layer 112 or the second semiconductor layer 116, see, e.g., fig. 13) of the light emitting structure (e.g., the light emitting structure 110, see, e.g., fig. 13). The connection structure of the connection electrode 140 and each semiconductor layer will be described in more detail below. According to an exemplary embodiment of the inventive concept, the connection electrode 140 may include a metal layer having a single-layer structure or a multi-layer structure. In an exemplary embodiment of the inventive concept, the connection electrode 140 may include a single connection metal layer 144. The connection metal layer 144 may include a metal material that may serve as a heat dissipation layer for dissipating heat generated from the light emitting structure to the outside and may serve as an electrical interconnection line for connecting the semiconductor layer to an external circuit. As an example, the connection metal layer 144 may include a metal material having a relatively high thermal conductivity and a relatively low electrical resistance. In an exemplary embodiment of the inventive concept, the connection metal layer 144 may include a metal material having a relatively low reaction rate with a constituent material included in the connection terminal 170 at a relatively high temperature.

As an example, the connection metal layer 144 may include a first metal element M1 having a higher thermal conductivity than that of gold (Au). In addition, a first reaction rate (e.g., reaction rate) of the first metal element M1 with the second metal element M2 included in the connection terminal 170 may be lower than a second reaction rate (e.g., reaction rate) of gold (Au) with the second metal element M2. For example, the first metal element M1 may include copper (Cu), and the second metal element M2 may include tin (Sn). Copper (Cu) may have a higher thermal conductivity than gold (Au), and a first reaction rate (e.g., reaction rate) of copper (Cu) with tin (Sn) may be lower than a second reaction rate (e.g., reaction rate) of gold (Au) with tin (Sn).

The connection metal layer 144 may have a first thickness t 1. The first thickness t1 of the connection metal layer 144 may be about

To about

Within the range of (1). The thickness t1 may vary in view of the heat dissipation and/or resistance characteristics of the connection metal layer 144. As an example, the first thickness t1 of the connection metal layer 144 may be about

Or larger. As an example, when viewed in plan view (see, e.g., fig. 12), the total planar area of the connection metal layer 144 may be greater than the total planar area of the UBM pattern 160. For example, the total planar area of the connection metal layer 144 may be equal to or greater than twice the total planar area of the UBM pattern 160. The total planar area of the connection metal layer 144 may be equal to or greater than 80% of the total planar area of the semiconductor light emitting device.

The protective insulating layer 150 may be disposed on the connection electrode 140. The protective insulating layer 150 may include a first opening OP1 partially exposing the top surface of the connection electrode 140. For example, the protective insulating layer 150 may include a silicon oxide layer and/or a silicon nitride layer, which correspond to the passivation insulating layer.

The UBM pattern 160 may be disposed on the top surface of the connection electrode 140 exposed by the first opening OP 1. In an exemplary embodiment of the inventive concept, the UBM pattern 160 may be in direct contact with the top surface of the connection electrode 140 (e.g., the connection metal layer 144), but may be spaced apart from the protective insulating layer 150 along the upper surface of the connection electrode 140. As an example, the UBM pattern 160 may have sidewalls spaced apart from sidewalls of the first opening OP 1. Accordingly, the connection metal layer 144 between the protective insulating layer 150 and the UBM pattern 160 may be exposed. As an example, the top surface of the UBM pattern 160 may be substantially flat. The sidewalls of the UBM pattern 160 may be inclined toward the connection electrode 140 with respect to the top surface of the UBM pattern 160. The sidewalls of the UBM pattern 160 may have, for example, a concave inclination. The UBM pattern 160 may increase the interface bonding strength between the connection electrode 140 and the solder bump 174 and may provide an electrical path. In addition, the UBM pattern 160 may prevent the solder from diffusing into the connection electrode 140 in the reflow process. For example, UBThe M pattern 160 may include Ni, Cu, Cr, Au, NiO_x、CrO_x、Ti、TiO_x、Sn、SnO_xOr TiW.

The UBM pattern 160 may include a metal layer having a single layer structure or a multi-layer structure. In an exemplary embodiment of the inventive concept, referring to fig. 2A, the UBM pattern 160 may include a first sub-UBM pattern 162 and a second sub-UBM pattern 164 that are sequentially stacked. The first sub-UBM pattern 162 and the second sub-UBM pattern 164 may each include a metal material different from each other. For example, the first sub-UBM pattern 162 may include Ti, Cr, or Cu, and the second sub-UBM pattern 164 may include Ni. The first sub-UBM pattern 162 may serve as an adhesive layer or a barrier layer, and the second sub-UBM pattern 164 may serve as a wetting layer. In an exemplary embodiment of the inventive concept, referring to fig. 2B, the UBM pattern 160 may include a first sub-UBM pattern 162, a second sub-UBM pattern 164, and a third sub-UBM pattern 166 that are sequentially stacked. In this case, the first to third

sub-UBM patterns

162, 164 and 166 may each include a metal material different from each other. For example, the first to third

sub-UBM patterns

162, 164 and 166 may include Ti, Cu and Ni, respectively. The above-described structure of the UBM pattern 160 may be used in various exemplary embodiments of the inventive concept described in more detail below.

The solder bump 174 may be disposed on the UBM pattern 160, and the intermetallic compound 172 may be located between the UBM pattern 160 and the solder bump 174. As an example, the solder bump 174 may be bonded to the UBM pattern 160 through the intermetallic compound 172. The solder bump 174 may be firmly bonded to the UBM pattern 160 by the intermetallic compound 172 serving as an adhesive.

The solder bump 174 may be formed by performing a reflow process on the solder located on the UBM pattern 160, and the intermetallic compound 172 may be formed in the reflow process for forming the solder bump 174. The solder may include the second metal element M2 (e.g., Sn) or a compound including the second metal element M2. For example, the solder may comprise Sn, Sn-Pb, Sn-In, Sn-Ag, Sn-Au, Sn-Cu, Sn-Bi, Sn-Zn, Sn-Ag-Cu, Sn-Ag-Bi, Sn-Ag-Zn, Sn-Cu-Bi, Sn-Cu-Zn, Sn-Bi-Zn, Sn-Ag-Ce, or any combination thereof. The metal included in the solder may react with the metal included in the UBM pattern 160 to form an intermetallic compound 172. For example, the intermetallic compound 172 may include a 2-membered alloy of tin-nickel formed by a reaction of tin (Sn) of the solder with nickel (Ni) of the UBM pattern 160.

In the reflow process, the intermetallic compound 172 formed between the solder bump 174 and the UBM pattern 160 by the phase transition of the solder may extend onto the sidewall of the UBM pattern 160 by the wettability of the UBM pattern 160. Accordingly, the connection terminal 170 may extend into a space between the protective insulating layer 150 and the UBM pattern 160 to contact the connection metal layer 144. Therefore, referring to, for example, fig. 2C, the second metal element M2 (e.g., tin) in the connection terminal 170 may diffuse into the connection metal layer 144 through the contact area of the connection terminal 170 and the connection metal layer 144. Referring to fig. 2C, for example, the connection terminal 170 may be spaced apart from the protective insulating layer 150. However, exemplary embodiments of the inventive concept are not limited thereto. In exemplary embodiments of the inventive concept, the connection terminal 170 may be in direct contact with the protective insulating layer 150 adjacent to the UBM pattern 160 in a reflow process.

As an example, in the structure in which the connection terminal 170 is in contact with the connection metal layer 144, the connection metal layer 144 may include gold (Au) having a relatively low resistance characteristic. However, gold (Au) may have a relatively high reaction rate (e.g., reaction rate) with the second metal element M2 (e.g., tin (Sn)) included in the connection terminal 170. Therefore, referring to fig. 2D, the amount of the second metal element M2 (e.g., tin) diffused into the connection metal layer 144 may increase in the reflow process, and the volume of the connection metal layer 144 may expand by the reaction of gold and the second metal element M2 (e.g., tin) diffused into the connection metal layer 144. The volume expansion of the connection metal layer 144 may cause cracks in the connection metal layer 144 and other layers adjacent to the connection metal layer 144 (e.g., the intermetallic compound 172 and/or an insulating layer under the connection metal layer 144), and thus the solder bump 174 may be detached from the device, or the metal material (e.g., silver) of the connection terminal 170 may move into other layers through the cracks, which may cause an electrical short. According to an exemplary embodiment of the inventive concept, the connection metal layer 144 may include a first metal element M1 (e.g., copper). The first reaction rate of the first metal element M1 (e.g., copper) and the second metal element M2 (e.g., tin) is lower than the second reaction rate of gold (Au) and the second metal element M2, thereby suppressing the reaction between the first metal element M1 and the second metal element M2 diffused to the connection metal layer 144. Accordingly, the occurrence of cracks of the connection metal layer 144 and/or other layers adjacent thereto may be reduced or prevented, thereby improving the reliability of the semiconductor light emitting device according to exemplary embodiments of the inventive concept.

Fig. 3, 5 and 6 are schematic cross-sectional views respectively illustrating electrical connection parts of a semiconductor light emitting device according to exemplary embodiments of the inventive concept. Fig. 4A, 4B, and 4C are enlarged views corresponding to a portion "a" of fig. 3, respectively.

Each of the electrical connection parts 11 described with reference to fig. 3 and 5 may include a connection electrode 140 having a multi-layered metal structure including a connection metal layer 144. Other features of the electrical connection component 11 described with reference to fig. 3 and 5 may be substantially the same as the corresponding features of the electrical connection component 11 described above with reference to fig. 1. So that repetitive description may be omitted below.

Referring to fig. 3, the connection electrode 140 may include a connection metal layer 144 and a barrier layer 146 disposed on the connection metal layer 144. Barrier layer 146 may substantially cover the top surface of connection metal layer 144. For example, barrier layer 146 may be disposed between connection metal layer 144 and UBM pattern 160, and may extend between connection metal layer 144 and protective insulating layer 150. Accordingly, the barrier layer 146 may substantially cover the top surface of the connection metal layer 144 exposed between the UBM pattern 160 and the protective insulating layer 150. As an example, the barrier layer 146 may be disposed between the connection terminal 170 and the connection metal layer 144, and the connection terminal 170 does not need to be in direct contact with the connection metal layer 144. Referring to fig. 4A, the barrier layer 146 may prevent the second metal element M2 of the connection terminal 170 from diffusing into the connection metal layer 144.

Barrier layer 146 may include a metal material that prevents second metal element M2 from diffusing into connection metal layer 144 and electrically connects UBM pattern 160 to connection metal layer 144. For example, barrier layer 146 may include Cr, Ti, Pt, TiW, or any alloy including at least one of the foregoing. According to an exemplary embodiment of the inventive concept, the barrier layer 146 may have a single layer structure or a multi-layer structure. In exemplary embodiments of the inventive concept, the barrier layer 146 may be a single layer (see, e.g., fig. 4A). In this case, barrier layer 146 may include, but is not limited to, chromium (Cr). In an exemplary embodiment of the inventive concept, referring to fig. 4B, the barrier layer 146 may include a first barrier layer 146L and a second barrier layer 146U that are sequentially stacked. In this case, the first barrier layer 146L may include Cr, and the second barrier layer 146U may include Ti, Pt, or TiW. However, exemplary embodiments of the inventive concept are not limited thereto. For example, barrier layer 146 may include three or more layers.

The barrier layer 146 may have a second thickness t 2. The second thickness t2 of the barrier layer 146 may be less than the first thickness t1 of the connection metal layer 144, which may minimize the influence on the heat dissipation and resistance characteristics of the connection electrode 140. For example, the second thickness t2 of the barrier layer 146 may be at about

To about

Within the range of (1).

Referring to fig. 4A, the UBM pattern 160 may include a first sub-UBM pattern 162 and a second sub-UBM pattern 164 sequentially stacked. However, exemplary embodiments of the inventive concept are not limited thereto. In exemplary embodiments of the inventive concept, the UBM pattern 160 may include a single layer or three or more layers. Other features or components of the electrical connection component 11 described with reference to fig. 3 may be the same as those described with reference to fig. 1. Hereinafter, redundant description may be omitted.

According to an exemplary embodiment of the inventive concept, the connection electrode 140 may include the barrier layer 146, which may prevent diffusion of the second metal element M2 of the connection terminal 170, and thus may prevent defects (e.g., cracks caused by volume expansion of the connection metal layer 144) that may occur during the formation of the connection terminal 170. Therefore, the reliability of the semiconductor light emitting device can be further improved.

In an exemplary embodiment of the inventive concept, the UBM pattern 160 may laterally extend along the upper surface of the connection electrode 140 to contact the protective insulating layer 150 (see, e.g., fig. 4C). Therefore, the connection terminal 170 does not need to be in contact with the connection electrode 140. However, since the thickness of the UBM pattern 160 between the connection terminal 170 and the connection electrode 140 is relatively small, the second metal element M2 may penetrate to the connection electrode 140 through the UBM pattern 160. Even in this case, since the connection electrode 140 includes the barrier layer 146, defects (e.g., cracks caused by volume expansion of the connection metal layer 144) that may occur during the formation of the connection terminal 170 may be further prevented. In an exemplary embodiment of the inventive concept, in the connection electrode 140 described with reference to fig. 4C, the barrier layer 146 may be omitted.

Referring to fig. 5, the connection electrode 140 may further include a reflective metal layer 142 positioned under the connection metal layer 144. As an example, the connection electrode 140 may include a reflective metal layer 142, a connection metal layer 144, and a barrier layer 146, which are sequentially stacked. The connection metal layer 144 and the barrier layer 146 may be the same as described above, and thus, a repetitive description thereof may be omitted below. The reflective metal layer 142 may include a metal or alloy having a relatively high reflectivity in a wavelength band of light emitted from the light emitting structure. Therefore, the reflection efficiency of the light emitting structure may be increased to improve the light extraction efficiency of the semiconductor light emitting device. For example, the reflective metal layer 142 may include Ag, Al, Cr, Ni, Au, Ti, or any combination or alloy thereof. In an exemplary embodiment of the inventive concept, the barrier layer 146 may be omitted in the connection electrode 140 described with reference to fig. 5. As an example, the connection electrode 140 may include a reflective metal layer 142 and a connection metal layer 144 that are sequentially stacked.

Referring to fig. 6, the UBM pattern 160 may have sidewalls substantially perpendicular to the top surface of the connection electrode 140. Other features or components of the electrical connection part 11 described with reference to fig. 6 may be the same as those described above, and thus, a repetitive description may be omitted. In an exemplary embodiment of the inventive concept, the connection electrode 140 may include a reflective metal layer 142, a connection metal layer 144, and a barrier layer 146, which are sequentially stacked. However, exemplary embodiments of the inventive concept are not limited thereto. In an exemplary embodiment of the inventive concept, at least one of the reflective metal layer 142 and the blocking layer 146 may be omitted in the connection electrode 140 described with reference to fig. 6.

Fig. 7 and 8 are schematic cross-sectional views respectively illustrating electrical connection parts of a semiconductor light emitting device according to exemplary embodiments of the inventive concept. The description of the same features or components as those described above may be omitted below.

Referring to fig. 7 and 8, the protective insulating layer 150 may be in contact with the UBM pattern 160. For example, the protective insulating layer 150 may substantially cover sidewalls of the UBM pattern 160 and may extend onto a top surface of the UBM pattern 160. The first opening OP1 of the protective insulating layer 150 may partially expose the top surface of the UBM pattern 160. The connection terminal 170 may be disposed on the top surface of the UBM pattern 160 exposed by the first opening OP 1. Since the protective insulating layer 150 is in contact with the UBM pattern 160, the electrical connection part 11 may have a structure in which the connection terminal 170 is not in contact with the connection electrode 140. For example, the connection terminal 170 may be in contact with the protective insulating layer 150, but may be spaced apart from the connection electrode 140. Accordingly, defects (e.g., cracks caused by volume expansion of the connection metal layer 144) that may occur in the process of forming the connection terminal 170 may be further prevented. Therefore, the reliability of the semiconductor light emitting device can be further improved.

The connection electrode 140 may include a single connection metal layer 144 (see, e.g., fig. 7). Alternatively, the connection electrode 140 may include a metal layer having a multi-layered structure including the connection metal layer 144 (see, e.g., fig. 8). In an exemplary embodiment of the inventive concept, one of the reflective metal layer 142 and the blocking layer 146 may be omitted in the connection electrode 140 described with reference to fig. 8.

A method of forming an electrical connection part according to an exemplary embodiment of the inventive concept will be described in more detail below.

Fig. 9A to 9E are sectional views illustrating a method of forming an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept. The description of the same features or components as those described above may be omitted below.

Referring to fig. 9A, a connection electrode 140 and a protective insulating layer 150 may be formed on a substrate. In an exemplary embodiment of the inventive concept, the connection electrode 140 may include a reflective metal layer 142, a connection metal layer 144, and a barrier layer 146, which are sequentially stacked. Each of the reflective metal layer 142, the connection metal layer 144, and the barrier layer 146 may be formed using a sputtering process, an electron beam (e-beam) deposition process, or an electroplating process. In exemplary embodiments of the inventive concept, at least one of the reflective metal layer 142 or the blocking layer 146 may be omitted in the connection electrode 140. The protective insulating layer 150 may be formed to cover substantially the entire top surface of the connection electrode 140 by a Chemical Vapor Deposition (CVD) process, a sputtering process, or an electron beam deposition process.

Referring to fig. 9B, a photoresist pattern MP may be formed on the protective insulating layer 150. The photoresist pattern MP may include a second opening OP2 exposing a portion of the protective insulating layer 150. A lower portion of the inner sidewall of the photoresist pattern MP may be laterally recessed to define an undercut region UC under a portion of the photoresist pattern MP adjacent to the second opening OP 2. As an example, the second opening OP2 may have a structure of an undercut region UC extending below a portion of the photoresist pattern MP.

Referring to fig. 9C, the protective insulating layer 150 exposed by the second opening OP2 may be removed. The removal of the protective insulating layer 150 may be performed using a wet etching process. During the wet etch process, the protective insulating layer 150 may be laterally etched by the undercut region UC of fig. 9B. Accordingly, the first opening OP1 may be formed in the protective insulating layer 150. The width of the first opening OP1 may be greater than the width of the second opening OP2, and the first opening OP1 may expose the connection electrode 140.

Referring to fig. 9D, a UBM layer 160L may be formed on the connection electrode 140. For example, the UBM layer 160L may be formed using a sputtering process. The UBM layer 160L may be formed to substantially cover the top surface of the connection electrode 140 exposed through the second opening OP2 and the top surface and inner sidewalls of the photoresist pattern MP. Since the second opening OP2 has a structure extending to the undercut region UC of fig. 9B, the deposition material may also be deposited on the top surface of the connection electrode 140 under the undercut region UC during the sputtering process. As an example, the UBM layer 160L may include a first portion P1 formed on the connection electrode 140 and a second portion P2 formed on the photoresist pattern MP. The first portion P1 may have a sidewall extending under the undercut region UC of the photoresist pattern MP and inclined with respect to the top surface of the connection electrode 140.

Referring to fig. 9E, the photoresist pattern MP may be removed. The removal of the photoresist pattern MP may be performed using a lift-off process. During the removal of the photoresist pattern MP, the second portion P2 of the UBM layer 160L may also be removed. A first portion P1 of the UBM layer 160L remaining after the removal of the photoresist pattern MP may be defined as the UBM pattern 160.

Referring again to fig. 5, a solder bump 174 may be formed on the UBM pattern 160. For example, solder may be deposited on the UBM pattern 160, and a reflow process may be performed on the solder to form the solder bump 174. During the reflow process, the intermetallic compound 172 may be formed between the solder bump 174 and the UBM pattern 160. For example, the UBM pattern 160 and solder (e.g., tin) may be partially melted to form an intermetallic compound 172 (e.g., a 2-membered alloy of tin-nickel (SnNi)). The intermetallic compound 172 may extend to substantially cover sidewalls of the UBM pattern 160, and thus the connection terminal 170 may extend in a space between the protective insulating layer 150 and the UBM pattern 160 to contact the connection electrode 140. In an exemplary embodiment of the inventive concept, solder formed on the package substrate may be bonded to the UBM pattern 160, and then a reflow process may be performed to form the solder bump 174. According to example embodiments of the inventive concept, the connection metal layer 144 may include a material including the first metal element M1 (e.g., copper (Cu)), and/or the connection electrode 140 may include the barrier layer 146, and thus defects (e.g., cracks caused by volume expansion of the connection metal layer 144) that may occur during a reflow process may be prevented. Accordingly, a semiconductor light emitting device with enhanced reliability can be realized.

Fig. 10A and 10B are sectional views illustrating a method of forming an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept. The description of the same features or components as those described above may be omitted below.

Referring to fig. 10A, a UBM layer 160L may be formed on the connection electrode 140 on which the protective insulating layer 150 and the photoresist pattern MP are formed. The UBM layer 160L may include a first portion P1 on the connection electrode 140 and a second portion P2 on the photoresist pattern MP. In exemplary embodiments of the inventive concept, the UBM layer 160L may be formed through a deposition process having lower fluidity on a deposition surface than the deposition process of the UBM layer 160L described with reference to fig. 9D. For example, the UBM layer 160L may be formed using an electron beam deposition process. In this case, the first portion P1 of the UBM layer 160L need not be formed on the connection electrode 140 under the undercut region UC (see, e.g., fig. 9D), and may have a sidewall substantially perpendicular to the top surface of the connection electrode 140. In addition, the second portion P2 of the UBM layer 160L may substantially cover the top surface of the photoresist pattern MP without covering the inner sidewalls of the photoresist pattern MP exposed by the second opening OP 2. In exemplary embodiments of the inventive concept, the UBM layer 160L may be formed using an electroplating process. A method of forming the connection electrode 140, the protective insulating layer 150, and the photoresist pattern MP may be substantially the same as the method described with reference to fig. 9A and 9B, and thus a repetitive description may be omitted.

Referring to fig. 10B, the photoresist pattern MP may be removed. The method of removing the photoresist pattern MP may be substantially the same as described with reference to fig. 9E. During the removal of the photoresist pattern MP, the second portion P2 of the UBM layer 160L may also be removed, but the first portion P1 of the UBM layer 160L may remain to form the UBM pattern 160.

Referring again to fig. 6, a connection terminal 170 may be formed on the UBM pattern 160, and thus, the electrical connection part 11 described with reference to fig. 6 may be formed. The method of forming the connection terminal 170 may be substantially the same as the method described with reference to fig. 5.

Fig. 11A to 11C are sectional views illustrating a method of forming an electrical connection part of a semiconductor light emitting device according to an exemplary embodiment of the inventive concept. The description of the same features or components as those described above may be omitted below.

Referring to fig. 11A, a UBM pattern 160 may be formed on the connection electrode 140. In exemplary embodiments of the inventive concept, the formation of the UBM pattern 160 may include forming a mask pattern on the connection electrode 140, forming a UBM layer on the connection electrode 140 on which the mask pattern is formed, and removing the mask pattern. In exemplary embodiments of the inventive concept, the formation of the UBM pattern 160 may include forming a UBM layer on the connection electrode 140, forming a mask pattern on the UBM layer, and etching the UBM layer using the mask pattern as an etch mask. The mask pattern may include a photoresist material, and the UBM layer may be formed using a sputtering process or an electron beam deposition process. Referring to fig. 11A, the connection electrode 140 may include a reflective metal layer 142, a connection metal layer 144, and a barrier layer 146, which are sequentially stacked. However, exemplary embodiments of the inventive concept are not limited thereto.

Referring to fig. 11B, a protective insulating layer 150 may be formed on the connection electrode 140. The protective insulating layer 150 may substantially cover the upper surface and the side surface of the UBM pattern 160.

Referring to fig. 11C, a first opening OP1 may be formed in the protective insulating layer 150. The first opening OP1 may partially expose the top surface of the UBM pattern 160. A mask pattern may be formed on the protective insulating layer 150, and the protective insulating layer 150 may be etched using the mask pattern as an etching mask to form the first opening OP 1.

Referring again to fig. 8, a solder bump 174 may be formed in the first opening OP1 of the protective insulating layer 150. For example, solder may be deposited on the UBM pattern 160, and a reflow process may be performed on the solder to form the solder bump 174. During the reflow process, the intermetallic compound 172 may be formed between the solder bump 174 and the UBM pattern 160. Thus, the electrical connection member 11 described with reference to fig. 8 can be formed.

In exemplary embodiments of the inventive concept, the protective insulating layer 150 may be in contact with the UBM pattern 160, and thus the material (e.g., metal) of the connection terminal 170 may be prevented from being diffused into the connection electrode 140 during the reflow process. As a result, defects (e.g., cracks caused by volume expansion of the connection metal layer 144) that may occur during the reflow process may be prevented.

The semiconductor light emitting device including the above-described electrical connection member will be described in more detail below.

Fig. 12 is a schematic plan view illustrating a semiconductor light emitting device according to an exemplary embodiment of the inventive concept. Fig. 13 to 16 are sectional views taken along line I-I' of fig. 12. Fig. 17 is a schematic plan view illustrating a semiconductor light emitting device according to an exemplary embodiment of the inventive concept.

Referring to fig. 12 and 13, the semiconductor light emitting device 20 may include a substrate 100, a light emitting structure 110, insulating

layers

120, 130, and 150, and

electrical connection members

11a and 11 b. The light emitting structure 110 may include a first semiconductor layer 112, an active layer 114, and a second semiconductor layer 116 sequentially stacked on the substrate 100. The

electrical connection parts

11a and 11b may include a first electrical connection part 11a electrically connected to the first semiconductor layer 112 and a second electrical connection part 11b electrically connected to the second semiconductor layer 116. The insulating

layers

120, 130, and 150 may include a first insulating layer 120, a second insulating layer 130, and a protective insulating layer 150. The substrate 100 may be, for example, a sapphire substrate, and may be provided as a substrate for growing a semiconductor. A buffer layer may be disposed between the substrate 100 and the first semiconductor layer 112. The buffer layer may relieve stress generated by lattice mismatch between the substrate 100 and the first semiconductor layer 112.

The light emitting structure 110 may include a first region R1 and a second region R2. The first region R1 may correspond to an etched region of the light emitting structure 110 in which the second semiconductor layer 116 and the active layer 114 are etched to expose the top surface of the first semiconductor layer 112. The second region R2 may correspond to a mesa region of the light emitting structure 110, which is not etched during the formation of the first region R1. The second region R2 may be thicker than the first region R1.

The first semiconductor layer 112 may include a semiconductor material doped with N-type impurities, and may be, for example, an N-type nitride semiconductor layer. The second semiconductor layer 116 may include a semiconductor material doped with P-type impurities, and may be, for example, a P-type nitride semiconductor layer. The first semiconductor layer 112 and the second semiconductor layer 116 may have Al_xIn_yGa_(1-xy)N (wherein x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1)And may comprise, for example, GaN, AlGaN, InGaN, or AlInGaN.

The active layer 114 disposed between the first semiconductor layer 112 and the second semiconductor layer 116 may emit light having a predetermined energy by recombination of electrons and holes. The active layer 114 may include a material having a smaller energy band gap than the energy band gaps of the first and second semiconductor layers 112 and 116. For example, when the first and second semiconductor layers 112 and 116 include a GaN-based compound semiconductor, the active layer 114 may include an InGaN-based compound semiconductor having an energy band gap smaller than that of the GaN-based compound semiconductor. The active layer 114 may have a Multiple Quantum Well (MQW) structure in which quantum well layers and quantum barrier layers are alternately stacked, for example, an InGaN/GaN structure. However, exemplary embodiments of the inventive concept are not limited thereto. In an exemplary embodiment of the inventive concept, the active layer 114 may have a Single Quantum Well (SQW) structure.

The first insulating layer 120 may be disposed on the first and second regions R1 and R2 of the light emitting structure 110. The first insulating layer 120 may partially expose the top surface of the second semiconductor layer 116 on the second region R2 and the top surface of the first semiconductor layer 112 on the first region R1. The first insulating layer 120 may include an insulating material (e.g., silicon oxide) having a refractive index lower than that of the second semiconductor layer 116. However, exemplary embodiments of the inventive concept are not limited thereto.

The contact electrode 125 may be disposed on the top surface of the second semiconductor layer 116 exposed by the first insulating layer 120. As an example, the contact electrode 125 may be located in the second region R2 of the light emitting structure 110 and may be in direct contact with the top surface of the second semiconductor layer 116 in the second region R2. In exemplary embodiments of the inventive concept, the contact electrode 125 may include Ag, Al, any combination thereof, or any alloy thereof. In exemplary embodiments of the inventive concept, the contact electrode 125 may include a metal or alloy including at least one of Ag, Al, Ni, Au, Ag, Ti, Cr, Pd, Cu, Pt, Sn, W, Rh, Ir, Ru, Mg, or Zn.

A second insulating layer 130 substantially covering the contact electrode 125 may be disposed on the first insulating layer 120. The second insulating layer 130 may include at least one third opening OP3 exposing the first semiconductor layer 112 in the first region R1 and at least one fourth opening OP4 exposing the contact electrode 125 in the second region R2. In exemplary embodiments of the inventive concept, each of the third and fourth openings OP3 and OP4 may include a plurality of openings. The second insulating layer 130 may include the same material as the first insulating layer 120. For example, the second insulating layer 130 may include silicon oxide or silicon nitride.

The

connection electrodes

140a and 140b may be disposed on the second insulating layer 130. The

connection electrodes

140a and 140b may include a first connection electrode 140a connected to the first semiconductor layer 112 through a third opening OP3 in the second insulating layer 130, and a second connection electrode 140b connected to the contact electrode 125 through a fourth opening OP4 in the second insulating layer 130. The first connection electrode 140a may include a first reflective metal layer 142a, a first connection metal layer 144a, and a first barrier layer 146a, which are sequentially stacked. The second connection electrode 140b may include a second reflective metal layer 142b, a second connection metal layer 144b, and a second barrier layer 146b in this order. The first reflective metal layer 142a may be in direct contact with the second insulating layer 130 positioned thereunder and in direct contact with the first semiconductor layer 112 exposed through the third opening OP 3. The first connection metal layer 144a may cover substantially the entire top surface of the first reflective metal layer 142a, and the first barrier layer 146a may cover substantially the entire top surface of the first connection metal layer 144 a. For example, when viewed in a plan view, the planar shape of the first reflective metal layer 142a and/or the planar shape of the first barrier layer 146a may be substantially the same as the planar shape of the first connection metal layer 144 a. However, exemplary embodiments of the inventive concept are not limited thereto.

The second reflective metal layer 142b may be in direct contact with the second insulating layer 130 disposed thereunder and in direct contact with the contact electrode 125 exposed through the fourth opening OP 4. The second connection metal layer 144b may cover substantially the entire top surface of the second reflective metal layer 142b, and the second barrier layer 146b may cover substantially the entire top surface of the second connection metal layer 144 b. For example, when viewed from a plan view, the planar shape of the second reflective metal layer 142b and/or the planar shape of the second barrier layer 146b may be substantially the same as the planar shape of the second connection metal layer 144 b. However, exemplary embodiments of the inventive concept are not limited thereto. The

reflective metal layers

142a and 142b, the

connection metal layers

144a and 144b, and the

barrier layers

146a and 146b may include the same materials as the reflective metal layer 142, the connection metal layer 144, and the barrier layer 146 of the electrical connection part 11 described above, respectively.

Each of the

connection metal layers

144a and 144b may have about

To about

Is measured. As an example, each of the

connection metal layers

144a and 144b may have about

Or a greater thickness. In addition, the total planar area of the

connection metal layers

144a and 144b may be greater than the total planar area of the

UBM patterns

160a and 160b when viewed in a plan view. For example, the total planar area of the

connection metal layers

144a and 144b may be equal to or greater than twice the total planar area of the

UBM patterns

160a and 160 b. The total planar area of the

connection metal layers

144a and 144b may be equal to or greater than about 80% of the total planar area of the semiconductor light emitting device 20. Each of the

barrier layers

146a and 146b may have a thickness less than that of each of the

connection metal layers

144a and 144b, respectively. For example, each of

barrier layers

146a and 146b may have a thickness from about

About

Is measured.

The protective insulating layer 150 may be disposed on the first and

second connection electrodes

140a and 140 b. The protective insulating layer 150 may extend into the first region R1 to cover the second insulating layer 130, and may include a fifth opening OP5 partially exposing top surfaces of the first and

second connection electrodes

140a and 140b on the second region R2. For example, the protective insulating layer 150 may include a silicon oxide layer and/or a silicon nitride layer corresponding to the passivation insulating layer.

The

UBM patterns

160a and 160b may be disposed on the top surfaces of the

connection electrodes

140a and 140b exposed through the fifth opening OP5, respectively. For example, the

UBM patterns

160a and 160b may include a first UBM pattern 160a disposed on the first connection electrode 140a and a second UBM pattern 160b disposed on the second connection electrode 140 b. The

UBM patterns

160a and 160b may be the same as or similar to the UBM pattern 160 of the electrical connection part 11 described in detail above. For example, the

UBM patterns

160a and 160b may have a single layer structure or a multi-layer structure, and may include Ni, Cu, Cr, Au, NiO_x、CrO_x、Ti、TiO_x、Sn、SnO_xOr TiW. The number of each of the first and

second UBM patterns

160a and 160b described with reference to fig. 12 is two. However, exemplary embodiments of the inventive concept are not limited thereto. In exemplary embodiments of the inventive concept, the number of each of the first and

second UBM patterns

160a and 160b may be 1, or may be three or more.

The first connection terminal 170a may be disposed on the first UBM pattern 160a, and the second connection terminal 170b may be disposed on the second UBM pattern 160 b. The first and

second connection terminals

170a and 170b may be the same as or similar to the connection terminals 170 of the electrical connection component 11 described in detail above. For example, each of the first and

second connection terminals

170a and 170b may include an intermetallic compound and a solder bump, as with the connection terminal 170 of the electrical connection component 11.

The first connection electrode 140a, the first UBM pattern 160a, and the first connection terminal 170a may be included in the first electrical connection part 11 a. The second connection electrode 140b, the second UBM pattern 160b, and the second connection terminal 170b may be included in the second electrical connection part 11 b. In an exemplary embodiment of the inventive concept, referring to fig. 14, the

barrier layers

146a and 146b in the

connection electrodes

140a and 140b may be omitted. In an exemplary embodiment of the inventive concept, referring to fig. 15, the

reflective metal layers

142a and 142b in the

connection electrodes

140a and 140b may be omitted. In this case, an additional contact electrode 127 may be disposed in the third opening OP3 of the second insulating layer 130 and may be in contact with the first semiconductor layer 112. The additional contact electrode 127 may include the same material as the contact electrode 125. The first connection metal layer 144a may be electrically connected to the first semiconductor layer 112 through an additional contact electrode 127. In an exemplary embodiment of the inventive concept, referring to fig. 16, the protective insulating layer 150 may be in contact with the

UBM patterns

160a and 160b, and the

connection terminals

170a and 170b on the

UBM patterns

160a and 160b need not be in contact with the

connection electrodes

140a and 140 b.

Various modifications may be made to the arrangement and number of the above components as required. For example, referring to fig. 17, each first region R1 of the light emitting structure body 110 may be formed in an island shape, and each of the third openings OP3 of the second insulating layer 130 may be formed in an island shape in each first region R1. As an example, one first UBM pattern 160a may be provided, but four second UBM patterns 160b may be provided (see, e.g., fig. 17).

A semiconductor light emitting device package including the above semiconductor light emitting device will be described in more detail below.

Fig. 18 and 19 are schematic cross-sectional views illustrating semiconductor light emitting device packages according to exemplary embodiments of the inventive concepts.

Referring to fig. 18, the semiconductor light emitting device package 1 according to an exemplary embodiment of the inventive concept may include a package main body 10a, at least two

lead frames

12 and 14, a semiconductor light emitting device 20, and a sealing layer 30. The lead frames 12 and 14 may include a first lead frame 12 and a second lead frame 14. The semiconductor light emitting device 20 may be the same as one of the semiconductor light emitting devices described with reference to fig. 12 to 17, and thus, a repetitive description may be omitted.

The semiconductor light emitting device 20 may be positioned over the first and second lead frames 12 and 14. The semiconductor light emitting device 20 may be positioned over the

connection terminals

170a and 170b and may be disposed on the

UBM patterns

160a and 160 b. As an example, the first UBM pattern 160a may be electrically connected to the first lead frame 12 through a first connection terminal 170a, and the second UBM pattern 160b may be electrically connected to the second lead frame 14 through a second connection terminal 170 b. The first UBM pattern 160a and the first connection terminal 170a may be included in the first electrical connection part 11a, and the second UBM pattern 160b and the second connection terminal 170b may be included in the second electrical connection part 11 b. Each of the first and second

electrical connection parts

11a and 11b may include a single electrical connection part or a plurality of electrical connection parts.

The package main body 10a may include a reflective cup for improving reflection efficiency and light extraction efficiency of light, and a sealing layer 30 formed of a transparent material may be disposed in the reflective cup to seal the semiconductor light emitting device 20. The sealing layer 30 may include a resin in which a fluorescent substance is dispersed. The fluorescent substance may include, for example, a green fluorescent substance and/or a red fluorescent substance.

The electrical signal applied to the lead frames 12 and 14 may be transmitted to the active layer 114 through the

electrical connection parts

11a and 11b (see, for example, fig. 13), and thus electrons and holes may be recombined with each other in the active layer 114. Light generated by electron-hole recombination may be emitted upward through the substrate 100 of fig. 13. As an example, the semiconductor light emitting device 20 may have a flip chip structure that emits light through the substrate 100.

Referring to fig. 19, the semiconductor light emitting device package 2 may include a mounting substrate 10b, a semiconductor light emitting device 20, and a sealing layer 30. The semiconductor light emitting device 20 may be the same as one of the semiconductor light emitting devices 20 described with reference to fig. 12 to 17, and thus, a repetitive description may be omitted.

The semiconductor light emitting device 20 may be positioned on the mounting substrate 10b and may be electrically connected to the first and

second circuit patterns

16 and 18. For example, the first UBM pattern 160a may be electrically connected to the first circuit pattern 16 through a first connection terminal 170a, and the second UBM pattern 160b may be electrically connected to the second circuit pattern 18 through a second connection terminal 170 b. For example, the mounting substrate 10b may be a Printed Circuit Board (PCB), a metal core PCB (mcpcb), a multi-layer PCB (mpcb), or a flexible PCB (fpcb). The semiconductor light emitting device 20 may be sealed by a sealing layer 30. Accordingly, a Chip On Board (COB) type package structure can be realized. The package structure including the semiconductor light emitting device 20 according to the exemplary embodiments of the inventive concept is not limited to the above-described embodiments, but may be in other various forms (e.g., chip scale package forms) as needed.

According to exemplary embodiments of the inventive concept, the connection electrode electrically connected to the semiconductor layer of the semiconductor light emitting device may include a connection metal layer including a metal material having a relatively low reaction rate with a solder material of the connection terminal, and/or the connection electrode may include a barrier layer preventing diffusion of the solder material. Therefore, in the process of forming the connection terminal, it is possible to prevent cracks from occurring in the connection metal layer and/or other layers adjacent to the connection metal layer. Accordingly, a semiconductor light emitting device with enhanced reliability can be realized.

While the present inventive concept has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present inventive concept.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked;

a connection electrode over the light emitting structure, the connection electrode including a connection metal layer electrically connected to at least one of the first semiconductor layer and the second semiconductor layer;

an under bump metal pattern on the connection electrode;

a connection terminal on the under bump metal pattern; and

a protective insulating layer disposed on the connection electrode and spaced apart from the under bump metal pattern along an upper surface of the connection electrode;

wherein the connection metal layer includes a first metal element, wherein a thermal conductivity of the first metal element is higher than a thermal conductivity of gold (Au),

wherein the connection terminal includes a second metal element,

wherein a first reaction rate of the first metal element with the second metal element is lower than a second reaction rate of gold (Au) with the second metal element, and

wherein the connection terminal is spaced apart from the protective insulating layer along an upper surface of the connection electrode, wherein the connection terminal covers upper and side surfaces of the under bump metal pattern, and wherein a width of the connection terminal is wider than a width of the under bump metal pattern and the connection terminal is in direct contact with the upper surface of the connection electrode.

2. The semiconductor light emitting device of claim 1, wherein the first metal element comprises copper (Cu), and

wherein the second metal element includes tin (Sn).

3. The semiconductor light emitting device of claim 1, wherein the connection electrode further comprises a barrier layer between the connection metal layer and the under bump metal pattern, and

wherein the barrier layer extends along an upper surface of the connection electrode and is in contact with the protective insulating layer.

4. The semiconductor light emitting device of claim 3, wherein the barrier layer comprises at least one of Cr, Ti, Pt, or TiW.

5. The semiconductor light emitting device of claim 3, wherein the barrier layer comprises a first barrier layer and a second barrier layer that are sequentially stacked, and

wherein the first barrier layer and the second barrier layer comprise different metal materials from each other.

6. The semiconductor light emitting device of claim 3 wherein the barrier layer has a thickness less than a thickness of the connection metal layer.

7. The semiconductor light emitting device of claim 1, wherein the connection electrode further comprises a reflective metal layer between the light emitting structure and the connection metal layer, and

wherein the reflective metal layer is connected to one of the first semiconductor layer and the second semiconductor layer.

8. The semiconductor light emitting device of claim 1, further comprising:

a first insulating layer between the light emitting structure and the connection electrode,

wherein the light emitting structure includes a first region and a second region having a thickness greater than that of the first region,

wherein the first insulating layer covers a portion of the light emitting structure in the second region in a direction orthogonal to an upper surface of the light emitting structure, and

wherein the first insulating layer includes an opening exposing the second semiconductor layer in the second region.

9. The semiconductor light emitting device according to claim 8, wherein the connection electrode is connected to the second semiconductor layer through the opening.

10. The semiconductor light emitting device of claim 9, wherein the connection electrode is a first connection electrode, the semiconductor light emitting device further comprising:

a second connection electrode over the first insulating layer in the first region, the second connection electrode being spaced apart from the first connection electrode, and the second connection electrode including a second connection metal layer including a same material as that of the first connection metal layer; and

a contact electrode in the first region, wherein the contact electrode is in contact with the first semiconductor layer in the first region,

wherein the second connection electrode is located in an opening formed in the first insulating layer in the first region, and wherein the second connection electrode is in contact with the contact electrode.

11. The semiconductor light emitting device of claim 8, further comprising:

a contact electrode in the opening in the first insulating layer, wherein the contact electrode is in contact with the second semiconductor layer,

wherein the connection metal layer is electrically connected to the second semiconductor layer through the contact electrode.

12. A semiconductor light emitting device comprising:

a connection electrode on the light emitting structure;

an under bump metal pattern on the connection electrode;

a protective insulating layer disposed on the connection electrode and spaced apart from the under bump metal pattern along an upper surface of the connection electrode; and

a connection terminal disposed on the under bump metal pattern, wherein the connection terminal is in direct contact with an upper surface of the connection electrode,

wherein the connection electrode includes:

a connection metal layer electrically connected to at least one of the first semiconductor layer and the second semiconductor layer; and

a barrier layer disposed between the connection metal layer and the under bump metal pattern, and disposed between the under bump metal pattern and the protective insulating layer, and

wherein the connection terminal is spaced apart from the protective insulating layer along an upper surface of the connection electrode, wherein the connection terminal covers upper and side surfaces of the under bump metal pattern, and wherein a width of the connection terminal is wider than a width of the under bump metal pattern.

13. The semiconductor light emitting device according to claim 12, wherein the connection metal layer comprises a first metal element having a thermal conductivity higher than that of gold (Au),

wherein the connection terminal includes a second metal element, and

wherein a first reaction rate of the first metal element with the second metal element is lower than a second reaction rate of gold (Au) with the second metal element.

14. A semiconductor light emitting device comprising:

a light emitting structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer;

a contact electrode disposed on the second semiconductor layer;

an insulating layer formed on the second semiconductor layer and the contact electrode, wherein the insulating layer includes a hole exposing the contact electrode;

a connection electrode disposed on the insulating layer, wherein the connection electrode is in direct contact with the contact electrode in the hole, and wherein the connection electrode includes a first metal element containing copper (Cu), and a thermal conductivity of the first metal element is higher than a thermal conductivity of gold (Au);

an under bump metal pattern disposed on the connection electrode;

a connection terminal disposed on the under bump metal pattern, wherein the connection terminal is in direct contact with an upper surface of the connection electrode; and

a protective insulating layer disposed on the connection electrode and spaced apart from the under bump metal pattern along an upper surface of the connection electrode,

wherein the connection terminal is spaced apart from the protective insulating layer along an upper surface of the connection electrode, wherein the connection terminal covers upper and side surfaces of the under bump metal pattern, and wherein a width of the connection terminal is wider than a width of the under bump metal pattern, and

wherein the connection terminal includes a second metal element, and a first reaction rate of the first metal element with the second metal element is lower than a second reaction rate of gold (Au) with the second metal element.

15. The semiconductor light emitting device of claim 14, wherein the connection electrode comprises a reflective metal layer, a connection metal layer, and a barrier layer.

16. The semiconductor light emitting device of claim 15, wherein the reflective metal layer is disposed between the insulating layer and the connection metal layer, and wherein the barrier layer is disposed between the connection metal layer and the under bump metal pattern.

17. The semiconductor light emitting device of claim 16, wherein the reflective metal layer is located in a hole between the connection metal layer and the contact electrode.