CN108181015A - Half photovoltaic module hot spot temperature testing method - Google Patents
Half photovoltaic module hot spot temperature testing method Download PDFInfo
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- CN108181015A CN108181015A CN201711449474.4A CN201711449474A CN108181015A CN 108181015 A CN108181015 A CN 108181015A CN 201711449474 A CN201711449474 A CN 201711449474A CN 108181015 A CN108181015 A CN 108181015A
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- hot spot
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- 238000012360 testing method Methods 0.000 title claims abstract description 36
- 238000004088 simulation Methods 0.000 claims abstract description 9
- 230000005611 electricity Effects 0.000 claims description 15
- 238000001931 thermography Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 2
- 238000011105 stabilization Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013481 data capture Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0066—Radiation pyrometry, e.g. infrared or optical thermometry for hot spots detection
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of half photovoltaic module hot spot temperature testing methods, include the following steps：S1, chip select determine the electric leakage largest battery piece in half photovoltaic module；S2, area is selected, determines the worst masked area of half photovoltaic module；S3, hot spot is selected, selects hot spot in every selected electric leakage largest battery on piece, non-hot region is covered with the worst masked area；S4, it is exposed to the sun, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into and exposure is carried out in steady-state simulation case, determine the hot spot temperature of half photovoltaic module.The half photovoltaic module hot spot temperature testing method of the present invention can not only determine the worst masked area of half photovoltaic module, and can quickly, easy the hot spot temperature for analyzing half photovoltaic module, it provides the foundation for half photovoltaic module hot spot analysis, it is convenient that hot spot risk is assessed, to improve the reliability of half photovoltaic module.
Description
Technical field
The present invention relates to a kind of half photovoltaic module hot spot test methods, belong to technical field of photovoltaic power generation.
Background technology
Due to increasing rapidly for the photovoltaic module market demand, power station investor is to the component efficiency of photovoltaic module and component work(
The requirement of rate is higher and higher, and conventional photovoltaic assemblies just gradually exit competitive market, and half photovoltaic module has as one kind
High-power photovoltaic module starts to be widely used, study；Existing half photovoltaic module is typically by general photovoltaic electric
Pond, to being cut into two half, and will be together in series, then make in parallel to the half battery after cutting by laser scribing
Into half photovoltaic module, therefore half photovoltaic module can effectively reduce the current mismatch of cell piece in component, and electric current is in component
Internal own loss is reduced, therefore the output power of half battery component is higher about 10W than the full wafer battery component of same version type, and
There are the advantages such as temperature coefficient is low, and dim light is good.
However, since half photovoltaic module changes original assembly circuit connection mode, original hot spot test method
No longer it is applicable in.
In view of this, it is necessory to propose a kind of hot spot test method suitable for half photovoltaic module, with accurate evaluation
The hot spot risk of half photovoltaic module.
Invention content
The purpose of the present invention is to provide a kind of half photovoltaic module hot spot temperature testing method, this method can quickly,
The easy hot spot temperature for testing out half photovoltaic module, so as to assess the risk that hot spot occurs for half photovoltaic module.
For achieving the above object, the present invention provides a kind of half photovoltaic module hot spot temperature testing method, masters
Include the following steps：
S1, chip select determine the electric leakage largest battery piece in half photovoltaic module；
S2, area is selected, the battery strings in half photovoltaic module is grouped, in proportion simultaneously to being leaked in each battery strings group
Electric largest battery piece is covered, and the worst masked area of half photovoltaic module is determined with this；
S3, hot spot is selected, selects hot spot in every selected electric leakage largest battery on piece, covered with the worst masked area non-
Hot spot region, and every it is described electric leakage largest battery piece hot spot at and non-hot region paste thermocouple；
S4, it is exposed to the sun, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into and exposure is carried out in steady-state simulation case,
Determine the hot spot temperature of half photovoltaic module.
As a further improvement on the present invention, the step S1 is specially：
S11, every a piece of cell piece in covering half photovoltaic module, and test corresponding I-V curve successively；
S12, the corresponding I-V curve of cell piece in same battery strings is merged on a figure, with every string battery
The cell piece of leakage current maximum is as electric leakage largest battery piece in string.
As a further improvement on the present invention, the step S2 is specially：
S21, the peak power output P that half photovoltaic module is measured under standard test environmentmaxAnd half photovoltaic module
Operating current Im；
S22, according to adjacent and in parallel principle, the battery strings in half photovoltaic module are divided into battery strings group；
S23, step diameter is covered according to 5% area, while covers whole electric leakage largest battery pieces in same battery strings group,
And the I-V curve of battery strings group under corresponding masked area is tested, to determine the keen current I of every group of battery strings groupk；
The operating current I of S24, comparison step S21mAnd the keen current I in step S23k, the keen current IkWith institute
State operating current ImClosest to when corresponding masked area be the worst masked area.
As a further improvement on the present invention, in the step S21, the solar energy irradiation intensity of the standard test environment
For 1000W/m2, cell piece temperature is 25 DEG C, air quality AM1.5；The operating current ImIt is defeated for half photovoltaic module maximum
Go out power PmaxCorresponding operating current.
As a further improvement on the present invention, largest battery piece is leaked electricity in the step S23, in same battery strings group successively
It is covered according to 5%, 10%, 15%, 20%, 25%, 30% area.
As a further improvement on the present invention, the step S3 is specially：
S31, primary election are hidden selected electric leakage largest battery piece entirely successively, and hot spot is detected with infrared thermography
Approximate location, find out non-hot region；
It is S32, selected, non-hot region is covered with the worst masked area, with the accurate position of infrared thermography detection hot spot
It puts；
S33, hot spot is captured, it is each at the hot spot of the described every largest battery piece that leaks electricity to glue 5 thermocouples, non-hot region
A selected reference point respectively pastes a thermocouple.
As a further improvement on the present invention, the step S4 is specially：
S41, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into steady-state simulation case, takes each battery successively
One group in string group covers non-hot region, exposure hotspot location and other battery strings groups by the worst masked area so that is surveyed
Hot(test)-spot temperature highest；
S42, every group of battery strings group is irradiated 1 hour or more successively, collects the temperature data of each period, treat that temperature is stablized
After count the hot spot temperature of maximum temperature value, as half photovoltaic module.
As a further improvement on the present invention, the irradiation intensity of steady-state simulation case described in the step S41 for 800~
1000W/m2, temperature is 25 ± 5 DEG C.
The beneficial effects of the invention are as follows：The half photovoltaic module hot spot temperature testing method of the present invention can not only determine half
The worst masked area of piece photovoltaic module, and can quickly, easy the hot spot temperature for analyzing half photovoltaic module, with side
Just the hot spot risk of half photovoltaic module is assessed, improves the reliability of half photovoltaic module.
Description of the drawings
Fig. 1 is the flow chart of half photovoltaic module hot spot temperature testing method of the present invention.
Fig. 2 is the I-V curve figure for choosing maximum drain batteries piece.
Fig. 3 is the largest battery piece covering schematic diagram that leaks electricity in battery strings group.
Fig. 4 is I-V curve schematic diagram when electric leakage largest battery piece is covered in Fig. 3.
Fig. 5 is the test schematic diagram of infrared thermography during S31 primary election of the present invention.
Fig. 6 is the test schematic diagram of infrared thermography in S32 refining process of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, it is right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Refering to Figure 1, the present invention provides a kind of half photovoltaic module hot spot temperature testing method, mainly include
Following steps：
S1, electric leakage largest battery piece in half photovoltaic module is determined；
S2, the battery strings in half photovoltaic module are grouped, it is maximum to leaking electricity in each battery strings group simultaneously in proportion
Cell piece is covered, and the worst masked area of half photovoltaic module is determined with this；
S3, hot spot is selected in every selected electric leakage largest battery on piece, non-hot area is covered with the worst masked area
Domain, and every it is described electric leakage largest battery piece hot spot at and non-hot region paste thermocouple；
S4, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into and exposure is carried out in steady-state simulation case, determines half
The hot spot temperature of piece photovoltaic module.
Description below part will illustrate step S1~S4.
The step S1 is specially：
S11, every a piece of cell piece in covering half photovoltaic module, and test corresponding chip select I-V curve successively；
S12, the corresponding chip select I-V curve of cell piece in same battery strings is merged on a figure, with every string
The cell piece of leakage current maximum is as electric leakage largest battery piece in battery strings.
It please refers to shown in Fig. 2, for during half photovoltaic module hot spot temperature testing method step S1 chip selects of the present invention
I-V curve is only illustrated by taking the chip select I-V curve of a string of battery strings as an example in the present specification, specifically, in the step
In rapid S1, when the corresponding chip select I-V curve of the cell piece in same battery strings merges when on a figure, it is now in most
The chip select I-V curve of top has maximum leakage current, then the corresponding cell piece of this chip select I-V curve is electric leakage largest battery
Piece.
The step S2 is specially：
S21, the peak power output P that half photovoltaic module is measured under standard test environmentmaxAnd half photovoltaic module
Operating current Im；
S22, according to adjacent and in parallel principle, the battery strings in half photovoltaic module are divided into battery strings group；
S23, step diameter is covered according to 5% area, while covers whole electric leakage largest battery pieces in same battery strings group,
And the I-V curve of battery strings group under corresponding masked area is tested, to determine the keen current I of every group of battery strings groupk；
The operating current I of S24, comparison step S21mAnd the keen current I in step S23k, the keen current IkWith institute
State operating current ImClosest to when corresponding masked area be the worst masked area.
In an embodiment of the present invention, the battery strings group in the step S22 includes two adjacent and in parallel string battery strings,
I.e. in the step S23, whole electric leakage largest battery pieces in same battery strings group have two panels, and in the embodiment of the present invention
In, the solar energy irradiation intensity of the step S21 Plays test environments is 1000W/m2, cell piece temperature is 25 DEG C, air
Quality is AM1.5, and the operating current ImFor half photovoltaic module peak power output PmaxCorresponding operating current.
It please refers to shown in Fig. 3, is the largest battery piece that leaks electricity in the same battery strings of half photovoltaic module in step S2 of the present invention
Schematic diagram when covered, wherein, the covering ratio for the largest battery piece that leaks electricity in every group of battery strings group is gradual according to 5% step diameter
Be incremented by, further, leak electricity in same battery strings group in the present invention largest battery piece successively according to 5%, 10%, 15%,
20%th, 25%, 30% area is covered；Refering to what is shown in Fig. 4, with masked area (a, b, c, d, and a ＜ b ＜ c ＜ d) by
It is cumulative big, keen current IkNumerical value is gradually reduced, as keen current IkWith operating current ImIt is worth (half photovoltaic module maximum output
Power PmaxCorresponding operating current) closest to when masked area be the worst masked area；Specifically, due to every group of electricity
The situation of largest battery piece of leaking electricity in the string group of pond and self performance have differences, therefore the largest battery piece that leaks electricity in different battery strings groups
The worst masked area there may be difference, i.e., the worst described masked area need to be confirmed according to actual test situation.
The step S3 is specially：
S31, primary election are hidden selected electric leakage largest battery piece entirely successively, and hot spot is detected with infrared thermography
Approximate location, find out non-hot region；
It is S32, selected, non-hot region is covered with the worst masked area, with the accurate position of infrared thermography detection hot spot
It puts；
S33, hot spot is captured, each viscous 5 thermocouples (choose the highest temperature at the hot spot of the described every largest battery piece that leaks electricity
Degree), the selected reference point of non-hot region (i.e. masked areas) respectively pastes a thermocouple.
Please refer to shown in Fig. 5 and Fig. 6, be step S31 primary election of the present invention during infrared thermography test image and
The test image of infrared thermography in step S32 refining process, it is maximum to electric leakage using black mask piece first during being somebody's turn to do
Cell piece is hidden entirely successively, to select non-hot region；After non-hot region is selected, using black mask piece according to the worst
Masked area covers non-hot region, to select the position at hot spot；Finally, leak electricity largest battery piece at described every
Hot spot at each glue 5 thermocouples, paste a thermocouple in the arbitrarily selected reference point in non-hot region；Wherein, in institute
It is the highest in order to select every electric leakage largest battery piece to state each viscous 5 thermocouples at the hot spot of every electric leakage largest battery piece
Temperature simultaneously carries out effective monitoring to the temperature at hot spot.
The step S4 is specially：
S41, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into steady-state simulation case (irradiation intensity for 800~
1000W/m2, temperature is 25 ± 5 DEG C) in, take one group in each battery strings group to cover non-hot area by the worst masked area successively
Domain, exposure hotspot location and other battery strings groups so that survey hot(test)-spot temperature highest；
S42, every group of battery strings group is irradiated 1 hour or more successively, collects the temperature data of each period, treat that temperature is stablized
After count the hot spot temperature of maximum temperature value, as half photovoltaic module.
In the step S42, since each battery strings group will be with the extension of exposure time hair in irradiation initial stage temperature data
Capture is moved, therefore need to count maximum temperature value after temperature stabilization in the hot spot temperature for measuring half photovoltaic module, to ensure
The hot spot temperature of the half photovoltaic module of measure is accurate.
In conclusion the half photovoltaic module hot spot temperature testing method of the present invention can determine half photovoltaic module most
Bad masked area is half photovoltaic module hot spot so as to quick, the easy hot spot temperature for analyzing half photovoltaic module
Analysis provides the foundation, convenient that hot spot risk is assessed, to further improve the reliability of half photovoltaic module.
The above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although with reference to preferred embodiment to this hair
It is bright to be described in detail, it will be understood by those of ordinary skill in the art that, it can modify to technical scheme of the present invention
Or equivalent replacement, without departing from the spirit and scope of technical solution of the present invention.
Claims (8)
1. a kind of half photovoltaic module hot spot temperature testing method, which is characterized in that include the following steps：
S1, chip select determine the electric leakage largest battery piece in half photovoltaic module；
S2, area is selected, the battery strings in half photovoltaic module is grouped, in proportion simultaneously to leaking electricity most in each battery strings group
Big battery piece is covered, and the worst masked area of half photovoltaic module is determined with this；
S3, hot spot is selected, selects hot spot in every selected electric leakage largest battery on piece, covered with the worst masked area non-hot
Region, and every it is described electric leakage largest battery piece hot spot at and non-hot region paste thermocouple；
S4, it is exposed to the sun, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into and exposure is carried out in steady-state simulation case, determined
The hot spot temperature of half photovoltaic module.
2. half photovoltaic module hot spot temperature testing method according to claim 1, it is characterised in that：The step S1 tools
Body is：
S11, every a piece of cell piece in covering half photovoltaic module, and test corresponding I-V curve successively；
S12, the corresponding I-V curve of cell piece in same battery strings is merged on a figure, in every string battery strings
The cell piece of leakage current maximum is as electric leakage largest battery piece.
3. half photovoltaic module hot spot temperature testing method according to claim 1, it is characterised in that：The step S2 tools
Body is：
S21, the peak power output P that half photovoltaic module is measured under standard test environmentmaxAnd the work of half photovoltaic module
Electric current Im；
S22, according to adjacent and in parallel principle, the battery strings in half photovoltaic module are divided into battery strings group；
S23, step diameter is covered according to 5% area, while covers whole electric leakage largest battery pieces in same battery strings group, and survey
The I-V curve of battery strings group under corresponding masked area is tried, to determine the keen current I of every group of battery strings groupk；
The operating current I of S24, comparison step S21mAnd the keen current I in step S23k, the keen current IkWith the work
Make electric current ImClosest to when corresponding masked area be the worst masked area.
4. half photovoltaic module hot spot temperature testing method according to claim 3, it is characterised in that：The step S21
In, the solar energy irradiation intensity of the standard test environment is 1000W/m2, cell piece temperature is 25 DEG C, and air quality is
AM1.5；The operating current ImFor half photovoltaic module peak power output PmaxCorresponding operating current.
5. half photovoltaic module hot spot temperature testing method according to claim 3, it is characterised in that：The step S23
In, the largest battery piece that leaks electricity in same battery strings group carries out successively according to 5%, 10%, 15%, 20%, 25%, 30% area
It covers.
6. half photovoltaic module hot spot temperature testing method according to claim 1, it is characterised in that：The step S3 tools
Body is：
S31, primary election are hidden selected electric leakage largest battery piece entirely successively, and the big of hot spot is detected with infrared thermography
Position is caused, finds out non-hot region；
It is S32, selected, non-hot region is covered with the worst masked area, with the accurate location of infrared thermography detection hot spot；
S33, hot spot is captured, each at the hot spot of the described every largest battery piece that leaks electricity to glue 5 thermocouples, non-hot region is selected
One reference point respectively pastes a thermocouple.
7. half photovoltaic module hot spot temperature testing method according to claim 1, it is characterised in that：The step S4 tools
Body is：
S41, the positive and negative terminals short circuit of half photovoltaic module is connected, and put into steady-state simulation case, takes each battery strings group successively
In one group cover non-hot region, exposure hotspot location and other battery strings groups by the worst masked area so that institute's calorimetric point
Temperature highest；
S42, every group of battery strings group is irradiated 1 hour or more successively, collects the temperature data of each period, united after temperature stabilization
Count the hot spot temperature of maximum temperature value, as half photovoltaic module.
8. half photovoltaic module hot spot temperature testing method according to claim 7, it is characterised in that：The step S41
Described in steady-state simulation case irradiation intensity be 800~1000W/m2, temperature is 25 ± 5 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711449474.4A CN108181015B (en) | 2017-12-27 | 2017-12-27 | Hot spot temperature testing method for half photovoltaic module |
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|---|---|---|---|
| CN201711449474.4A CN108181015B (en) | 2017-12-27 | 2017-12-27 | Hot spot temperature testing method for half photovoltaic module |
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| Publication Number | Publication Date |
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| CN108181015A true CN108181015A (en) | 2018-06-19 |
| CN108181015B CN108181015B (en) | 2020-07-17 |
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ID=62547847
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113466253A (en) * | 2020-03-31 | 2021-10-01 | 苏州阿特斯阳光电力科技有限公司 | Method and equipment for detecting hot spot defect of solar cell |
| CN113765480A (en) * | 2021-10-28 | 2021-12-07 | 晶科能源(海宁)有限公司 | Photovoltaic module hot spot testing method and photovoltaic module hot spot testing device |
| CN114121697A (en) * | 2020-08-31 | 2022-03-01 | 盐城阿特斯阳光能源科技有限公司 | Hot spot risk detection method for solar cell |
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| CN106066916A (en) * | 2016-06-03 | 2016-11-02 | 河海大学常州校区 | A kind of photovoltaic module hot spot temperature computation method |
| CN107478335A (en) * | 2017-08-08 | 2017-12-15 | 河海大学常州校区 | A kind of method of microdefect solar module hot spot temperature computation |
| CN109284879A (en) * | 2017-07-19 | 2019-01-29 | 阿特斯阳光电力集团有限公司 | Photovoltaic module hot spot appraisal procedure |
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| US6036464A (en) * | 1995-08-18 | 2000-03-14 | Northrop Grumman Corporation | Heat blanket buffer assembly |
| CN106066916A (en) * | 2016-06-03 | 2016-11-02 | 河海大学常州校区 | A kind of photovoltaic module hot spot temperature computation method |
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| CN108181015B (en) | 2020-07-17 |
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Address after: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee after: CSI CELLS Co.,Ltd. Patentee after: CANADIAN SOLAR MANUFACTURING (CHANGSHU) Inc. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee before: CSI Cells Co.,Ltd. Patentee before: CANADIAN SOLAR MANUFACTURING (CHANGSHU) Inc. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
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Effective date of registration: 20220311 Address after: 215555 Yangyuan Changsheng Road, Xinzhuang Town, Changshu City, Suzhou City, Jiangsu Province Patentee after: CANADIAN SOLAR MANUFACTURING (CHANGSHU) Inc. Patentee after: CSI CELLS Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: 215129 199 deer Road, Suzhou hi tech Development Zone, Jiangsu, Suzhou Patentee before: CSI CELLS Co.,Ltd. Patentee before: CANADIAN SOLAR MANUFACTURING (CHANGSHU) Inc. Patentee before: Atlas sunshine Power Group Co.,Ltd. |
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Granted publication date: 20200717 |