CN108179469A - A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove - Google Patents
A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove Download PDFInfo
- Publication number
- CN108179469A CN108179469A CN201810148534.7A CN201810148534A CN108179469A CN 108179469 A CN108179469 A CN 108179469A CN 201810148534 A CN201810148534 A CN 201810148534A CN 108179469 A CN108179469 A CN 108179469A
- Authority
- CN
- China
- Prior art keywords
- exhaust
- ring
- exhaust pipe
- crucible
- outer ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052571 earthenware Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Abstract
The invention discloses a kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove.Exhaust apparatus includes exhaust ring, exhaust pipe；The exhaust ring is internally provided with the tap air channel, air inlet, gas outlet of annular；Exhaust pipe includes exhaust pipe bend and the tube body from the extension of exhaust pipe bend lower end；Exhaust gas is passed sequentially through tap air channel, gas outlet and exhaust pipe and is discharged gas by the air inlet bleed on exhaust ring.The exhaust ring is set as annular, when coordinating with the crucible in single crystal growing furnace, can avoid the excessive temperature differentials of crucible each position from the circumferentially uniform exhaust of crucible and the brilliant non-uniform hidden danger of interior minister occurs.And it can't be contacted between exhaust pipe and crucible, the heat of exhaust pipe can't influence the temperature of crucible again, and the temperature of crucible is made to reduce external action, be better able to accurately control to improve crystal growth quality.
Description
Technical field
The present invention relates to single crystal growing furnace field, the exhaust apparatus and corresponding single crystal growing furnace of especially a kind of single crystal growing furnace.
Background technology
Monocrystalline silicon is the crystal with basic complete lattice structure, is a kind of good semi-conducting material, purity is reachable
To more than 99.9999999%, it can be used for diode grade, rectifying device grade, circuit-level and solar battery grade single crystal product article
Production and deep processing manufacture, subsequent product integrated circuit and semiconductor separation part be widely used to every field,
It is also occupied an important position in military avionic equipment, the forward position in new material development.
Semiconductor grade monocrystal stove is crystal growth equipment important in monocrystalline silicon industrial chain, due to semiconductor grade silicon single crystal
Slowly growth forms body under conditions of high temperature, needs good temperature gradient control to form the cold heart, while need equal
The temperature field of even stabilization with realize monocrystal in crucible stablize grow.And in the exhaust process of crucible, go out in practice
Easily cause in crucible that thermal field is disorderly, heat is uneven and influences crystal growth quality the problem of existing when being the heat that crucible exhaust is taken away,
Crystal purity and yield rate are relatively low, seriously affect the production efficiency of high purity silicon monocrystalline.
Therefore a kind of new technical solution is needed to solve the above problems.
Invention content
The purpose of the present invention is to provide a kind of exhaust apparatus suitable for semiconductor grade single crystal growing furnace, can provide exhaust
While function, the influence changed to crucible temperature is reduced, improves crystal growth quality.
Present invention simultaneously provides a kind of single crystal growing furnaces using above-mentioned exhaust apparatus.
In order to achieve the above objectives, following technical solution can be used in exhaust apparatus of the present invention：
A kind of exhaust apparatus of semiconductor grade monocrystal stove, including exhaust ring and on the outside of exhaust ring and from up to down
The exhaust pipe of extension；The exhaust ring includes inner ring, around the outer ring of inner ring, the top plate of annular, annular chassis；Wherein top plate
Above inner ring and outer ring；Chassis is set below inner ring and outer ring；Inner ring, outer ring, top plate, chassis surround drawing for annular jointly
Gas channel；The inner ring is equipped with several air inlets；The outer ring is equipped with and the one-to-one gas outlet of exhaust pipe；The row
Tracheae includes exhaust pipe bend and the tube body from the extension of exhaust pipe bend lower end；The inside of the exhaust pipe bend is equipped with what is protruded out to outer ring
Connecting tube；The connecting tube is mounted on the outer ring gas outlet and passes through gas outlet and connected with tap air channel；The air inlet draws
Gas channel, gas outlet, connecting tube and exhaust pipe connect.
Advantageous effect：The present invention exhaust apparatus by the air inlet bleed on exhaust ring, and pass sequentially through tap air channel,
Gas outlet, connecting tube and exhaust pipe discharge gas.It, can when coordinating with the crucible in single crystal growing furnace due to being set as annular
It is set around crucible and from the circumferentially uniform exhaust of crucible so that the temperature change of each position is uniform in crucible, avoids earthenware
The excessive temperature differentials of crucible each position and the brilliant non-uniform hidden danger of interior minister occurs.And exhaust pipe is drawn simultaneously certainly from the outside of exhaust ring
Upper and lower extension, can't contact, the heat of exhaust pipe can't influence the temperature of crucible again, make earthenware between exhaust pipe and crucible
The temperature of crucible reduces external action, is better able to accurately control to improve crystal growth quality.
The present invention also provides the single crystal growing furnaces for the exhaust apparatus for using above-mentioned semiconductor grade monocrystal stove, including crucible and enclose
Around the heater of crucible, exhaust ring is stated on the outside of heater upper end, and the air inlet on inner ring is connected with heater.
The advantageous effect that the technical solution of the single crystal growing furnace can reach is same as above, and is equally the temperature difference for avoiding crucible each position
It is excessive and the brilliant non-uniform hidden danger of interior minister occurs.And the temperature of crucible is made to reduce external action, it is better able to accurately control
To improve crystal growth quality.
Description of the drawings
Fig. 1 is the stereogram of exhaust apparatus of the present invention.
Fig. 2 is the internal view of exhaust apparatus of the present invention.
Fig. 3 is the stereogram of exhaust pipe in exhaust apparatus of the present invention.
Fig. 4 is exhaust apparatus and crucible, the schematic diagram of the heater cooperation of annular in single crystal growing furnace.
Specific embodiment
Embodiment one
The embodiment of the present invention one discloses a kind of exhaust apparatus of semiconductor grade monocrystal stove.
Incorporated by reference to shown in Fig. 1 to Fig. 3, the exhaust apparatus of the semiconductor grade monocrystal stove of the present embodiment, including exhaust ring 1 and
Mounted on 1 outside of exhaust ring and the exhaust pipe 2 extended from up to down；The exhaust ring 1 includes inner ring 11, around the outer of inner ring 11
Circle 12, the top plate 13 of annular, annular chassis 14.The lower end of the exhaust ring 1 is equipped with the insulation bushing 3 of annular.Wherein top plate
13 are set on 12 top of inner ring 11 and outer ring；Chassis 14 is set on 12 lower section of inner ring 11 and outer ring；Inner ring 11, outer ring 12, top plate 13, bottom
Disk 14 surrounds the tap air channel 15 of annular jointly；The inner ring is equipped with several air inlets 16；The outer ring 12 is equipped with and row
2 one-to-one gas outlet 17 of tracheae.The exhaust pipe 2 includes exhaust pipe bend 21 and the tube body from the extension of 21 lower end of exhaust pipe bend
22.The inside of the exhaust pipe bend 21 is equipped with the connecting tube 23 protruded out to outer ring 12.The connecting tube 23 is mounted on outside described and irises out
On gas port 17 and pass through gas outlet 17 and connected with tap air channel 15.The air inlet 16, tap air channel 15, gas outlet 17, connection
Pipe 23 and exhaust pipe 2 connect, and pass sequentially through tap air channel 15, gas outlet 17, connecting tube 23 from the gas in air inlet 16
And exhaust pipe 2 discharges gas.Wherein as shown in Figure 1, the exhaust pipe 2 sets 4, and is evenly distributed in exhaust ring 1
Outside.
In the present embodiment, the connecting tube 23 is fixed on the lateral surface of outer ring 12 by bolt 24；The bolt 24
In tap air channel 15, and stretch out the fixed outer ring 12 of connection and connecting tube 23 from inside to outside from tap air channel 15.Here installation
The space of tap air channel 15 is cleverly utilized in mode, does not need to be additionally provided to 24 the space occupied of bolt, makes exhaust apparatus
Compact overall structure.The periphery of the connecting tube 23 is equipped with the threaded hole 25 that coordinate with bolt 24, when bolt 24 screw rod oneself
It is threadedly coupled after tap air channel 15 is protruding with the formation of threaded hole 25.The top of the exhaust pipe bend 21 is inserted with exhaust cap
26。
Embodiment two
It please refers to shown in Fig. 4, the invention also discloses a kind of exhaust apparatus including above-mentioned semiconductor grade monocrystal stove
The embodiment of single crystal growing furnace, the exhaust apparatus in exhaust apparatus, that is, embodiment one in the embodiment.The single crystal growing furnace includes earthenware
Crucible 4 and the annular heater 5 (i.e. primary heater) around crucible 4.The exhaust ring 1 is mounted on the outside of 5 upper end of heater, and
Air inlet 16 on inner ring is connected with 4 inside of crucible.
Claims (7)
1. a kind of exhaust apparatus of semiconductor grade monocrystal stove, which is characterized in that including exhaust ring (1) and mounted on exhaust ring
(1) outside and the exhaust pipe (2) extended from up to down；
The exhaust ring (1) including inner ring (11), around the outer ring of inner ring (11) (12), annular top plate (13), annular bottom
Disk (14)；Wherein top plate (13) is above inner ring (11) and outer ring (12)；Chassis (14) is set on inner ring (11) and outer ring (12)
Lower section；Inner ring (11), outer ring (12), top plate (13), chassis (14) surround annular tap air channel (15) jointly；The inner ring
(11) several air inlets (16) are equipped with；The outer ring (12) is equipped with and the one-to-one gas outlet (17) of exhaust pipe (2)；
Tube body (22) of the exhaust pipe (2) including exhaust pipe bend (21) and from the extension of exhaust pipe bend (21) lower end；The exhaust
The inside of pipe bend (21) is equipped with the connecting tube (23) protruded out to outer ring；The connecting tube (23) is mounted on the outer ring gas outlet (17)
It goes up and passes through gas outlet (17) and connected with tap air channel (15)；The air inlet (16), tap air channel (15), gas outlet (17),
Connecting tube (23) and exhaust pipe (2) connect.
2. the exhaust apparatus of semiconductor grade monocrystal stove according to claim 1, it is characterised in that：The connecting tube (23)
The lateral surface of outer ring (12) is fixed on by bolt (24)；The bolt (24) is led in tap air channel (15) from bleed
Road (15) stretches out from inside to outside connects and fixes outer ring (12) and connecting tube (23).
3. the exhaust apparatus of semiconductor grade monocrystal stove according to claim 2, it is characterised in that：The connecting tube (23)
Periphery be equipped with the threaded hole (25) that coordinates with bolt (24).
4. the exhaust apparatus of semiconductor grade monocrystal stove according to claim 3, it is characterised in that：The exhaust pipe (2)
Setting 4, and it is evenly distributed in the outside of exhaust ring (1).
5. the exhaust apparatus of semiconductor grade monocrystal stove according to claim 4, it is characterised in that：The exhaust pipe bend
(21) top is inserted with exhaust cap (26).
6. the exhaust apparatus of semiconductor grade monocrystal stove according to claim 5, it is characterised in that：The exhaust ring (1)
Lower end be equipped with annular insulation bushing (3).
7. a kind of single crystal growing furnace for including the exhaust apparatus of semiconductor grade monocrystal stove as described in any one of claim 1 to 6, packet
Include crucible (4) and the heater (5) of the annular around crucible (4), it is characterised in that：The exhaust ring (1) is mounted on heater
(5) it on the outside of upper end, and is connected inside the air inlet (16) on inner ring and crucible (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810148534.7A CN108179469A (en) | 2018-02-13 | 2018-02-13 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810148534.7A CN108179469A (en) | 2018-02-13 | 2018-02-13 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108179469A true CN108179469A (en) | 2018-06-19 |
Family
ID=62552650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810148534.7A Pending CN108179469A (en) | 2018-02-13 | 2018-02-13 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108179469A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110760935A (en) * | 2019-11-29 | 2020-02-07 | 晶澳太阳能有限公司 | Single crystal furnace |
| CN112410874A (en) * | 2020-11-16 | 2021-02-26 | 连城凯克斯科技有限公司 | Exhaust device of semiconductor-grade silicon single crystal furnace |
| CN114411263A (en) * | 2022-01-14 | 2022-04-29 | 南京晶升装备股份有限公司 | Pipeline system for recycling heat energy of crystal growth furnace |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101709506A (en) * | 2009-05-11 | 2010-05-19 | 南安市三晶阳光电力有限公司 | Exhaust method and device of thermal field of single crystal furnace |
| CN201908153U (en) * | 2010-12-18 | 2011-07-27 | 江阴市华英光伏科技有限公司 | Thermal field exhaust device of single crystal furnace |
| CN202131392U (en) * | 2011-06-13 | 2012-02-01 | 江苏晶鼎电子材料有限公司 | Exhaust system of cavity of single crystal furnace |
| CN202139324U (en) * | 2011-07-13 | 2012-02-08 | 西安华晶电子技术股份有限公司 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
| CN203923441U (en) * | 2014-06-20 | 2014-11-05 | 河北宁通电子材料有限公司 | The single crystal growing furnace of built-in gas barrier |
| CN205635847U (en) * | 2016-05-26 | 2016-10-12 | 王玲玲 | Single crystal pulling furnace |
| CN206902281U (en) * | 2016-07-11 | 2018-01-19 | 青海拓日新能源科技有限公司 | A kind of single crystal growing furnace |
| CN208008945U (en) * | 2018-02-13 | 2018-10-26 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
-
2018
- 2018-02-13 CN CN201810148534.7A patent/CN108179469A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101709506A (en) * | 2009-05-11 | 2010-05-19 | 南安市三晶阳光电力有限公司 | Exhaust method and device of thermal field of single crystal furnace |
| CN201908153U (en) * | 2010-12-18 | 2011-07-27 | 江阴市华英光伏科技有限公司 | Thermal field exhaust device of single crystal furnace |
| CN202131392U (en) * | 2011-06-13 | 2012-02-01 | 江苏晶鼎电子材料有限公司 | Exhaust system of cavity of single crystal furnace |
| CN202139324U (en) * | 2011-07-13 | 2012-02-08 | 西安华晶电子技术股份有限公司 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
| CN203923441U (en) * | 2014-06-20 | 2014-11-05 | 河北宁通电子材料有限公司 | The single crystal growing furnace of built-in gas barrier |
| CN205635847U (en) * | 2016-05-26 | 2016-10-12 | 王玲玲 | Single crystal pulling furnace |
| CN206902281U (en) * | 2016-07-11 | 2018-01-19 | 青海拓日新能源科技有限公司 | A kind of single crystal growing furnace |
| CN208008945U (en) * | 2018-02-13 | 2018-10-26 | 南京晶能半导体科技有限公司 | A kind of exhaust apparatus and single crystal growing furnace of semiconductor grade monocrystal stove |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110760935A (en) * | 2019-11-29 | 2020-02-07 | 晶澳太阳能有限公司 | Single crystal furnace |
| CN112410874A (en) * | 2020-11-16 | 2021-02-26 | 连城凯克斯科技有限公司 | Exhaust device of semiconductor-grade silicon single crystal furnace |
| CN114411263A (en) * | 2022-01-14 | 2022-04-29 | 南京晶升装备股份有限公司 | Pipeline system for recycling heat energy of crystal growth furnace |
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