CN108174617B - Heat-bonding sheet and heat-bonding sheet with dicing tape - Google Patents
Heat-bonding sheet and heat-bonding sheet with dicing tape Download PDFInfo
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- CN108174617B CN108174617B CN201680058257.XA CN201680058257A CN108174617B CN 108174617 B CN108174617 B CN 108174617B CN 201680058257 A CN201680058257 A CN 201680058257A CN 108174617 B CN108174617 B CN 108174617B
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- layer
- heating
- bonding sheet
- heat
- dicing tape
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- 238000010438 heat treatment Methods 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims description 49
- 239000011230 binding agent Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000002923 metal particle Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 239000010419 fine particle Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 8
- 229910001111 Fine metal Inorganic materials 0.000 claims description 6
- 238000007373 indentation Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 149
- 239000004065 semiconductor Substances 0.000 description 68
- -1 polyethylene carbonate Polymers 0.000 description 47
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 46
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 43
- 239000000178 monomer Substances 0.000 description 31
- 230000001070 adhesive effect Effects 0.000 description 23
- 239000010408 film Substances 0.000 description 23
- 239000000853 adhesive Substances 0.000 description 22
- 229920000058 polyacrylate Polymers 0.000 description 20
- 238000001035 drying Methods 0.000 description 18
- 238000009835 boiling Methods 0.000 description 17
- 238000000576 coating method Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 230000005855 radiation Effects 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- 238000005304 joining Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
- 229920000515 polycarbonate Polymers 0.000 description 13
- 239000004417 polycarbonate Substances 0.000 description 13
- 238000005498 polishing Methods 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 229920005601 base polymer Polymers 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 230000000740 bleeding effect Effects 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000002966 varnish Substances 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 229940059574 pentaerithrityl Drugs 0.000 description 5
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- 238000009864 tensile test Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920000379 polypropylene carbonate Polymers 0.000 description 3
- 229960004063 propylene glycol Drugs 0.000 description 3
- 235000013772 propylene glycol Nutrition 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- AUZRCMMVHXRSGT-UHFFFAOYSA-N 2-methylpropane-1-sulfonic acid;prop-2-enamide Chemical compound NC(=O)C=C.CC(C)CS(O)(=O)=O AUZRCMMVHXRSGT-UHFFFAOYSA-N 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- YYIOIHBNJMVSBH-UHFFFAOYSA-N 2-prop-2-enoyloxynaphthalene-1-sulfonic acid Chemical group C1=CC=C2C(S(=O)(=O)O)=C(OC(=O)C=C)C=CC2=C1 YYIOIHBNJMVSBH-UHFFFAOYSA-N 0.000 description 2
- BWVZAZPLUTUBKD-UHFFFAOYSA-N 3-(5,6,6-Trimethylbicyclo[2.2.1]hept-1-yl)cyclohexanol Chemical compound CC1(C)C(C)C2CC1CC2C1CCCC(O)C1 BWVZAZPLUTUBKD-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- NYXVMNRGBMOSIY-UHFFFAOYSA-N OCCC=CC(=O)OP(O)(O)=O Chemical compound OCCC=CC(=O)OP(O)(O)=O NYXVMNRGBMOSIY-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 229920006243 acrylic copolymer Polymers 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 125000005587 carbonate group Chemical group 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- ORTVZLZNOYNASJ-UPHRSURJSA-N (z)-but-2-ene-1,4-diol Chemical compound OC\C=C/CO ORTVZLZNOYNASJ-UPHRSURJSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- 229940083957 1,2-butanediol Drugs 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- 229940035437 1,3-propanediol Drugs 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 description 1
- ZVEMLYIXBCTVOF-UHFFFAOYSA-N 1-(2-isocyanatopropan-2-yl)-3-prop-1-en-2-ylbenzene Chemical compound CC(=C)C1=CC=CC(C(C)(C)N=C=O)=C1 ZVEMLYIXBCTVOF-UHFFFAOYSA-N 0.000 description 1
- IAUGBVWVWDTCJV-UHFFFAOYSA-N 1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CCC(S(O)(=O)=O)NC(=O)C=C IAUGBVWVWDTCJV-UHFFFAOYSA-N 0.000 description 1
- 239000005968 1-Decanol Substances 0.000 description 1
- HYLLZXPMJRMUHH-UHFFFAOYSA-N 1-[2-(2-methoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOC HYLLZXPMJRMUHH-UHFFFAOYSA-N 0.000 description 1
- SNAQINZKMQFYFV-UHFFFAOYSA-N 1-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOC SNAQINZKMQFYFV-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- RERATEUBWLKDFE-UHFFFAOYSA-N 1-methoxy-2-[2-(2-methoxypropoxy)propoxy]propane Chemical compound COCC(C)OCC(C)OCC(C)OC RERATEUBWLKDFE-UHFFFAOYSA-N 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LZHUBCULTHIFNO-UHFFFAOYSA-N 2,4-dihydroxy-1,5-bis[4-(2-hydroxyethoxy)phenyl]-2,4-dimethylpentan-3-one Chemical compound C=1C=C(OCCO)C=CC=1CC(C)(O)C(=O)C(O)(C)CC1=CC=C(OCCO)C=C1 LZHUBCULTHIFNO-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- MTVLEKBQSDTQGO-UHFFFAOYSA-N 2-(2-ethoxypropoxy)propan-1-ol Chemical compound CCOC(C)COC(C)CO MTVLEKBQSDTQGO-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- RJBIZCOYFBKBIM-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]propane Chemical compound COCCOCCOC(C)C RJBIZCOYFBKBIM-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- LRRQSCPPOIUNGX-UHFFFAOYSA-N 2-hydroxy-1,2-bis(4-methoxyphenyl)ethanone Chemical compound C1=CC(OC)=CC=C1C(O)C(=O)C1=CC=C(OC)C=C1 LRRQSCPPOIUNGX-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- JEHFRMABGJJCPF-UHFFFAOYSA-N 2-methylprop-2-enoyl isocyanate Chemical compound CC(=C)C(=O)N=C=O JEHFRMABGJJCPF-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- YQEIMEGRSTXEMX-UHFFFAOYSA-N 3-methylbut-2-enoyl 3-methylbut-2-enoate Chemical compound CC(C)=CC(=O)OC(=O)C=C(C)C YQEIMEGRSTXEMX-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- NYUTUWAFOUJLKI-UHFFFAOYSA-N 3-prop-2-enoyloxypropane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCOC(=O)C=C NYUTUWAFOUJLKI-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- BWPYBAJTDILQPY-UHFFFAOYSA-N Methoxyphenone Chemical compound C1=C(C)C(OC)=CC=C1C(=O)C1=CC=CC(C)=C1 BWPYBAJTDILQPY-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 241000968352 Scandia <hydrozoan> Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- URLYGBGJPQYXBN-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methyl prop-2-enoate Chemical compound OCC1CCC(COC(=O)C=C)CC1 URLYGBGJPQYXBN-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 239000002253 acid Chemical group 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000009820 dry lamination Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- OPECTNGATDYLSS-UHFFFAOYSA-N naphthalene-2-sulfonyl chloride Chemical compound C1=CC=CC2=CC(S(=O)(=O)Cl)=CC=C21 OPECTNGATDYLSS-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- HJGMWXTVGKLUAQ-UHFFFAOYSA-N oxygen(2-);scandium(3+) Chemical compound [O-2].[O-2].[O-2].[Sc+3].[Sc+3] HJGMWXTVGKLUAQ-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011369 resultant mixture Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/085—Copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2248—Oxides; Hydroxides of metals of copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2286—Oxides; Hydroxides of metals of silver
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2469/00—Presence of polycarbonate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/277—Manufacturing methods involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
- H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
A sheet for thermal bonding has a layer whose hardness after being held at 300 ℃ for 2.5 minutes after being heated from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa is in the range of 1.5GPa to 10GPa in a measurement using a nanoindenter.
Description
Technical Field
The present invention relates to a heat bonding sheet and a heat bonding sheet with a dicing tape.
Background
In the manufacture of semiconductor devices, a method of bonding a semiconductor element to an adherend such as a metal lead frame (so-called die bonding method) has been changed from a conventional gold-silicon eutectic to a method using solder or a resin paste. Currently, a conductive resin paste is sometimes used.
In recent years, power semiconductor devices that control and supply electric power have become widespread. Since a current flows in the power semiconductor device at all times, the amount of heat generated is large. Therefore, an electrically conductive adhesive usable for a power semiconductor device desirably has high heat dissipation properties and low specific resistance.
Power semiconductor devices are required to operate at high speed with low loss. Conventionally, a Semiconductor using Si, such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), has been used as a power Semiconductor device. In recent years, devices using semiconductors such as SiC and GaN have been developed, and are expected to be widely used in the future.
A semiconductor using SiC or GaN has characteristics such as a large band gap and a high dielectric breakdown field, and low loss, high-speed operation, and high-temperature operation are possible. The high-temperature operation is advantageous for automobiles and small-sized power conversion devices, which have a severe thermal environment. A semiconductor device for use in a severe thermal environment is supposed to operate at a high temperature of about 250 ℃, and a solder or a conductive adhesive, which is a conventional bonding/adhesion material, has problems in thermal characteristics and reliability. Therefore, a paste material containing sintered metal particles has been proposed (for example, see patent document 1). The paste material containing sintered metal particles contains nano-micron sized metal particles, and these metal particles are melted at a temperature lower than a general melting point due to the nano-sized effect, and sintering between the particles is performed.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2014-111800
Disclosure of Invention
Problems to be solved by the invention
However, since the paste material containing the sintered metal particles is in a paste state, bleeding and adhesion to the chip surface may occur at the time of die bonding of the semiconductor chip. Therefore, a tilt may occur, which may cause a reduction in yield and a variation in performance in manufacturing a semiconductor device. In particular, when a high voltage is applied, if the chip is tilted, the bonding distance becomes uneven, and the characteristics of the device deteriorate.
Further, when the sintered layer is brittle, peeling occurs due to long-term use, and high reliability cannot be obtained.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a heat bonding sheet which can suppress bleeding at the time of bonding and adhesion to the surface of an object to be bonded, and can obtain a strong sintered layer after sintering, and a heat bonding sheet with a dicing tape having the heat bonding sheet.
Means for solving the problems
In order to solve the above-described conventional problems, the present inventors have studied a thermal joining sheet and a thermal joining sheet with a dicing tape including the thermal joining sheet. As a result, they have found that the following constitution can suppress bleeding at the time of pasting and adhesion to the surface of the pasting object and can obtain a strong sintered layer after sintering, thereby completing the present invention.
That is, the heat bonding sheet of the present invention is characterized in that,
which has a layer that becomes a sintered layer by heating,
the hardness of the aforementioned layer after heating by heating condition A described below was in the range of 1.5GPa to 10GPa as measured by a nanoindenter.
< heating Condition A >
The layer was heated from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then held at 300 ℃ for 2.5 minutes.
According to the above configuration, since the sheet is not a paste, bleeding at the time of pasting and adhesion to the surface of the pasting object can be suppressed.
Further, the steel sheet has a layer which becomes a sintered layer by heating, and the hardness of the layer after heating by the above heating condition A is in the range of 1.5GPa to 10GPa as measured by a nanoindenter. The heating condition a is a heating condition determined on the assumption that the layer is sintered by heating. Since the hardness is 1.5GPa or more, the sintered layer obtained by heating the layer is strong. Further, since the hardness is 10GPa or less, the sintered layer obtained by heating the layer has appropriate flexibility.
Further, the heat bonding sheet of the present invention is characterized in that,
which has a layer that becomes a sintered layer by heating,
the elastic modulus of the layer after heating under the following heating condition A is in the range of 30GPa to 150GPa as measured by a nanoindenter.
< heating Condition A >
The layer was heated from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then held at 300 ℃ for 2.5 minutes.
According to the above configuration, since the sheet is not a paste, bleeding at the time of pasting and adhesion to the surface of the pasting object can be suppressed.
Further, the film has a layer which becomes a sintered layer by heating, and the elastic modulus of the layer after heating under the above-mentioned heating condition A is in the range of 30GPa to 150GPa as measured by using a nanoindenter. The heating condition a is a heating condition determined on the assumption that the layer is sintered by heating. Since the elastic modulus is 30GPa or more, the sintered layer obtained by heating the layer is strong. Further, since the elastic modulus is 150GPa or less, the sintered layer obtained by heating the layer has appropriate flexibility.
In the above configuration, the layer preferably has a deformation amount in a range of 1600nm to 1900nm, which is obtained by the deformation amount measuring method B described below.
< method of measuring distortion amount B >
(1) Heating the layer from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then holding the heated layer at 300 ℃ for 2.5 minutes to obtain a layer for measuring deformation,
(2) And a step of pressing the layer for measuring deformation into the substrate with a pressing depth of 2 μm using a nanoindenter to measure the deformation after the pressing is released and before the pressing.
When the amount of deformation is 1900nm or less, the obtained sintered layer is strong and reliability is improved. On the other hand, when the deformation amount is 1600nm or more, the sintered layer obtained has improved reliability because it has an elastic deformation region.
In the above configuration, the layer preferably contains a pyrolytic binder that is solid at 23 ℃.
When the layer contains a pyrolytic adhesive which is solid at 23 ℃, the sheet shape can be easily maintained before the heat bonding step. In addition, pyrolysis is likely to occur in the heat bonding step.
In the above configuration, it is preferable that the layer contains fine metal particles, and the fine metal particles are at least 1 kind selected from the group consisting of silver, copper, an oxide of silver, and an oxide of copper.
When the metal fine particles are contained and the metal fine particles are at least 1 selected from the group consisting of silver, copper, an oxide of silver, and an oxide of copper, the heat bonding can be more suitably performed.
Further, a heat bonding sheet with a dicing tape according to the present invention includes:
a dicing tape, and
the heating bonding sheet is laminated on the dicing tape.
According to the above-described heat bonding sheet with a dicing tape, since it is integrated with the dicing tape, the step of bonding to the dicing tape can be omitted. Further, since the heat bonding sheet is provided, bleeding at the time of bonding and adhesion to the surface of the object to be bonded can be suppressed. Further, since the heat bonding sheet including the layer is provided, the sintered layer obtained by heating the layer is strong.
Drawings
Fig. 1 is a schematic cross-sectional view illustrating a heat bonding sheet with a dicing tape according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view showing a heat-joining sheet with a dicing tape according to another embodiment of the present invention.
Fig. 3 is a schematic sectional view showing a heat bonding sheet with a separator on both sides.
Fig. 4 is a schematic cross-sectional view for explaining a method of manufacturing a semiconductor device according to this embodiment.
Fig. 5 is a diagram showing an example of a load-displacement curve.
Fig. 6 is a diagram for explaining a projected image of the indenter.
Detailed Description
(Heat bonding sheet with dicing tape)
The following describes a heat bonding sheet and a heat bonding sheet with a dicing tape according to an embodiment of the present invention. As the heat bonding sheet of the present embodiment, a heat bonding sheet in a state where a dicing tape is not bonded can be cited as an example of the heat bonding sheet with a dicing tape described below. Therefore, the following description will be made of the heating joining sheet with the dicing tape, and the description will be made of the heating joining sheet. Fig. 1 is a schematic cross-sectional view illustrating a heat bonding sheet with a dicing tape according to an embodiment of the present invention. Fig. 2 is a schematic sectional view showing another heating joining sheet with a dicing tape according to another embodiment of the present invention.
As shown in fig. 1, the thermal bonding sheet with dicing tape 10 has a structure in which the thermal bonding sheet 3 is stacked on a dicing tape 11. The dicing tape 11 is configured such that the pressure-sensitive adhesive layer 2 is laminated on the base material 1, and the thermal bonding sheet 3 is provided on the pressure-sensitive adhesive layer 2. As shown in fig. 2, the heat bonding sheet with dicing tape 12 may be configured such that the heat bonding sheet with dicing tape 3' is formed only on the work attaching portion.
(Heat bonding sheet)
The heat bonding sheets 3 and 3' are sheet-like. Since the sheet is not a paste, bleeding at the time of pasting and adhesion to the surface of the pasting object can be suppressed.
The heating joining sheets 3 and 3' of the present embodiment include a layer 31 which becomes a sintered layer by heating. In the present embodiment, a case where the layer to become the sintered layer by heating of the heating joining sheet is 1 layer will be described, but the present invention is not limited to this example. The layer to be a sintered layer by heating in the present invention may be a laminate of a plurality of layers to be sintered layers by heating.
In the present embodiment, a case where the heating joining sheet includes a layer which becomes a sintered layer by heating will be described, but the present invention is not limited to this example. The heat bonding sheet of the present invention may have 2 or more layers. For example, a layer which becomes a sintered layer by heating and another layer (a layer which does not become a sintered layer by heating) may be stacked.
That is, the heat bonding sheet in the present invention is not particularly limited in its structure as long as it has a layer that becomes a sintered layer by heating.
(layer to become sintered layer by heating)
The hardness of the layer 31 (hereinafter, also referred to as "layer 31") which becomes a sintered layer by heating is preferably in the range of 1.5GPa to 10GPa in the measurement using a nanoindenter after heating under the following heating condition a. The hardness is more preferably in the range of 2.0GPa to 8GPa, and still more preferably in the range of 2.5GPa to 7 GPa. The heating condition a described below is a heating condition determined assuming a condition in which the layer is sintered by heating. The hardness measurement method using the nanoindenter was the method described in examples.
< heating Condition A >
The layer 31 was heated from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then held at 300 ℃ for 2.5 minutes.
When the hardness is 1.5GPa or more, the sintered layer obtained by heating the layer 31 is strong. When the hardness is 10GPa or less, the sintered layer obtained by heating the layer 31 has appropriate flexibility.
The hardness can be controlled by the type, content, average particle diameter, type and content of the pyrolytic binder, type and content of the low boiling point binder, heating conditions (for example, temperature, time, temperature rise rate, etc.) for forming the sintered layer by heating, and atmosphere (for example, atmospheric atmosphere, nitrogen atmosphere, or reducing gas atmosphere, etc.) for forming the sintered layer.
The elastic modulus of the layer 31 after heating under the following heating condition a is preferably in the range of 30GPa to 150GPa in the measurement using a nanoindenter. The elastic modulus is more preferably in the range of 35GPa to 120GPa, and still more preferably in the range of 40GPa to 100 GPa. The heating condition a described below is a heating condition determined assuming a condition in which the layer is sintered by heating. The method for measuring the elastic modulus using the nanoindenter was the method described in examples.
< heating Condition A >
The layer 31 was heated from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then held at 300 ℃ for 2.5 minutes.
When the elastic modulus is 30GPa or more, the sintered layer obtained by heating the layer is strong. When the elastic modulus is 150GPa or less, the sintered layer obtained by heating the layer 31 has appropriate flexibility.
The elastic modulus can be controlled by the type, content, average particle diameter, type and content of the pyrolytic binder, type and content of the low boiling point binder, heating conditions (for example, temperature, time, temperature rise rate, and the like) for forming the sintered layer by heating, and atmosphere (for example, atmospheric atmosphere, nitrogen atmosphere, or reducing gas atmosphere) for forming the sintered layer.
The amount of deformation of the layer 31 obtained by the deformation amount measuring method B described below is preferably in the range of 1600nm to 1900 nm. The above-mentioned deformation amount is more preferably in the range of 1620nm to 1880nm, and still more preferably in the range of 1650nm to 1850 nm.
< method of measuring distortion amount B >
(1) Heating the layer from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then holding the heated layer at 300 ℃ for 2.5 minutes to obtain a layer for measuring deformation,
(2) And a step of pressing the layer for measuring deformation into the substrate with a pressing depth of 2 μm using a nanoindenter to measure the deformation after the pressing is released and before the pressing.
The method for measuring the deformation amount described in more detail in the examples was used.
When the amount of deformation is 1900nm or less, the obtained sintered layer is strong and reliability is improved. On the other hand, when the deformation amount is 1600nm or more, the sintered layer obtained has improved reliability because it has an elastic deformation region.
The tensile modulus of the layer 31 obtained by the tensile test method described below is preferably 10MPa to 3000MPa, more preferably 12MPa to 2900MPa, and still more preferably 15MPa to 2500 MPa.
Tensile test method:
(1) as a test sample, a heat bonding sheet (heat bonding sheet for tensile test) having a thickness of 200 μm, a width of 10mm and a length of 40mm was prepared,
(2) the tensile test was carried out at a chuck pitch of 10mm, a tensile speed of 50 mm/min and 23 ℃,
(3) the tensile modulus was determined as the slope of the linear portion of the obtained stress-strain diagram.
When the tensile modulus of the layer 31 is 10MPa or more, bleeding of the constituent material of the thermal bonding sheet and adhesion to the chip surface at the time of die bonding can be further suppressed. When the tensile modulus is 3000MPa or less, for example, the semiconductor wafer can be fixed at the time of dicing.
The carbon concentration of the layer 31 obtained by energy dispersive X-ray analysis after the temperature rise from 23 ℃ to 400 ℃ is performed under the atmospheric atmosphere at the temperature rise rate of 10 ℃/min is preferably 15 wt% or less, more preferably 12 wt% or less, and still more preferably 10 wt% or less. When the carbon concentration is 15 wt% or less, the layer 31 is substantially free of organic substances after the temperature is raised to 400 ℃. As a result, the heat resistance after the heat bonding step is excellent, and high reliability and thermal characteristics can be obtained even in a high-temperature environment.
The peak of the layer 31 when subjected to differential thermal analysis at 23 ℃ to 500 ℃ in an atmospheric atmosphere at a temperature rise rate of 10 ℃/min is preferably 150 to 350 ℃, more preferably 170 to 320 ℃, and still more preferably 180 to 310 ℃. When the peak is present at 150 to 350 ℃, it can be said that the organic matter (for example, the resin component constituting the layer 31) is thermally decomposed in this temperature range. As a result, the heat resistance after the heat bonding step is further excellent.
The layer 31 preferably contains metal particles in an amount of 60 to 98 wt% based on the entire layer 31. The content of the metal fine particles is more preferably in the range of 65 to 97% by weight, and still more preferably in the range of 70 to 95% by weight. When the metal fine particles are contained in the range of 60 to 98 wt%, 2 articles (for example, a semiconductor chip and a lead frame) can be bonded by sintering or melting the metal fine particles.
The metal fine particles include sintered metal particles.
As the above-mentioned sinterable metal particles, fine metal particles and aggregates of fine metal particles can be suitably used. Examples of the metal fine particles include fine particles made of a metal. Examples of the metal include gold, silver, copper, silver oxide, and copper oxide. Among them, at least 1 kind selected from the group consisting of silver, copper, silver oxide, and copper oxide is preferable. When the metal fine particles are at least 1 selected from the group consisting of silver, copper, silver oxide, and copper oxide, the heat bonding can be more suitably performed.
The average particle diameter of the sinterable metal particles is preferably 0.0005 μm or more, more preferably 0.001 μm or more. The lower limit of the average particle size may be 0.01. mu.m, 0.05. mu.m, or 0.1. mu.m. On the other hand, the average particle diameter of the sinterable metal particles is preferably 30 μm or less, and more preferably 25 μm or less. The upper limit of the average particle size may be 20 μm, 15 μm, 10 μm or 5 μm.
The average diameter of the crystallites of the sintered metal particles is preferably 0.01nm or more and 60nm or less, more preferably 0.1nm or more and 50nm or less, and still more preferably 0.5nm or more and 45nm or less. When the average diameter of the crystallites is in the above range, an excessive increase in the sintering temperature of the sinterable metal particles can be suppressed.
The average particle diameter of the sinterable metal particles is measured by the following method. That is, the sintered metal particles are observed by SEM (scanning electron microscope) to measure the average particle diameter. Note that SEM observation is preferable: for example, when the sintered metal particles are in the micron size, they are observed at 5000 times, when they are in the submicron size, they are observed at 50000 times, and when they are in the nanometer size, they are observed at 300000 times.
The shape of the sintered metal particles is not particularly limited, and examples thereof include spherical, rod-like, scaly and amorphous shapes.
The low boiling point binder is liquid at 23 ℃. In the present specification, "liquid" includes semi-liquid. Specifically, the viscosity at 23 ℃ obtained by viscosity measurement with a dynamic viscoelasticity measuring apparatus (rheometer) is 100000 pas or less.
The conditions for viscosity measurement are as follows.
A rheometer: MERIII manufactured by Thermo SCIENTFIC
Specific examples of the low boiling point binder include monohydric and polyhydric alcohols such as pentanol, hexanol, heptanol, octanol, 1-decanol, ethylene glycol, diethylene glycol, propylene glycol, butanediol, α -terpineol, 1, 6-hexanediol, isobornyl cyclohexanol (MTPH), ethylene glycol butyl ether, ethylene glycol phenyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, diethylene glycol butyl ether, diethylene glycol isobutyl ether, diethylene glycol hexyl ether, triethylene glycol methyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, propylene glycol propyl ether, dipropylene glycol methyl ether, dipropylene glycol ethyl ether, dipropylene glycol propyl ether, and the like, Ethers such as dipropylene glycol butyl ether, dipropylene glycol dimethyl ether, tripropylene glycol methyl ether, tripropylene glycol dimethyl ether, ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, dipropylene glycol methyl ether acetate (DPMA), and the like. These may be used in combination of 2 or more. Among them, 2 binders having different boiling points are preferably used in combination. When 2 kinds of binders having different boiling points are used, the sheet shape is excellent in terms of maintenance.
The layer 31 preferably contains a pyrolyzable binder that is solid at 23 ℃. When the pyrolytic adhesive is contained, the sheet shape can be easily maintained before the heat bonding step. In addition, pyrolysis is likely to occur in the heat bonding step.
In the present specification, "solid state" specifically means that the viscosity at 23 ℃ obtained by the viscosity measurement using the aforementioned rheometer is more than 100000Pa · s.
In the present specification, the "pyrolytic adhesive" refers to an adhesive that can be pyrolyzed in the heat bonding step. The pyrolytic adhesive is preferably substantially not left in the sintered layer (heated layer 31) after the heat bonding step. The pyrolytic binder may be, for example, a material having a carbon concentration of 15 wt% or less, which is obtained by energy dispersive X-ray analysis after a temperature rise from 23 ℃ to 400 ℃ is performed under an atmospheric atmosphere at a temperature rise rate of 10 ℃/min, even if the layer 31 contains the pyrolytic binder. For example, when a material that is more easily pyrolyzed is used as the pyrolyzable binder, even if the content is large, it can be made such that substantially no residue remains in the sintered layer (the heated layer 31) after the heat bonding step.
Examples of the pyrolytic binder include polycarbonate, acrylic resin, ethyl cellulose, polyvinyl alcohol, and the like. These materials may be used alone or in combination of 2 or more. Among them, polycarbonate is preferable from the viewpoint of high pyrolysis property.
The polycarbonate is not particularly limited as long as it can be thermally decomposed in the heat bonding step, and examples thereof include: aliphatic polycarbonates having an aliphatic chain and no aromatic compound (e.g., benzene ring) between carbonate groups (-O-CO-O-) in the main chain; an aromatic polycarbonate comprising an aromatic compound between carbonate groups (-O-CO-O-) in the main chain. Among them, aliphatic polycarbonates are preferable.
Examples of the aliphatic polycarbonate include polyethylene carbonate and polypropylene carbonate. Among them, polypropylene carbonate is preferable from the viewpoint of solubility in an organic solvent in the preparation of a varnish for sheet formation.
Examples of the aromatic polycarbonate include aromatic polycarbonates having a bisphenol a structure in the main chain.
The weight average molecular weight of the polycarbonate is preferably in the range of 10000 to 1000000. The weight average molecular weight is a value calculated by measuring by GPC (gel permeation chromatography) and converting to polystyrene.
The acrylic resin may be, for example, in the range that can be thermally decomposed in the heat bonding step: and polymers (acrylic copolymers) containing 1 or 2 or more species of esters of acrylic acid or methacrylic acid having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms, as a component. Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a tert-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, a cyclohexyl group, a 2-ethylhexyl group, an octyl group, an isooctyl group, a nonyl group, an isononyl group, a decyl group, an isodecyl group, an undecyl group, a lauryl group, a tridecyl group, a tetradecyl group, a stearyl group, an octadecyl group, and a dodecyl group.
Examples of the other monomer for forming the polymer (acrylic copolymer) include, but are not particularly limited to, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid, anhydride monomers such as maleic anhydride and itaconic anhydride, hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) -methyl acrylate, styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, and the like, Sulfonic acid group-containing monomers such as sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid, and acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.
In the acrylic resin, the weight average molecular weight is more preferably 1 to 100 ten thousand, and still more preferably 3 to 70 ten thousand. This is because, when the amount is within the above numerical range, adhesiveness before the heat bonding step and pyrolysis property at the time of the heat bonding step are excellent. The weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
Among the acrylic resins, those pyrolyzed at 200 to 400 ℃ are preferred.
The layer 31 may contain, for example, a plasticizer in addition to the above components.
The heat bonding sheets 3 and 3' can be produced by a conventional method. For example, the heat bonding sheet 3 or 3' can be produced by preparing a varnish containing the above components for forming the layer 31, coating the varnish on a substrate separator to have a predetermined thickness to form a coating film, and then drying the coating film.
The solvent used for the varnish is not particularly limited, and is preferably an organic solvent or an alcohol solvent capable of uniformly dissolving, kneading or dispersing the above components. Examples of the organic solvent include: ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone and cyclohexanone, and toluene and xylene. Examples of the alcohol solvent include ethylene glycol, diethylene glycol, 1, 2-propanediol, 1, 3-propanediol, 1, 2-butanediol, 1, 3-butanediol, 1, 4-butanediol, 2-butene-1, 4-diol, 1,2, 6-hexanetriol, glycerol, octanediol, 2-methyl-2, 4-pentanediol, and terpineol.
The coating method is not particularly limited. Examples of the solvent coating method include: die coaters, gravure coaters, roll coaters, reverse coaters, comma coaters, Pipe knife coaters (Pipe coater), screen printing, and the like. Among them, a die coater is preferable from the viewpoint of high uniformity of coating thickness. The drying conditions of the coating film are not particularly limited, and the drying may be carried out at a drying temperature of 70 to 160 ℃ for a drying time of 1 to 5 minutes, for example. Even after the coating film is dried, the solvent may not be completely vaporized depending on the type of the solvent and may remain in the coating film.
When the layer 31 contains the low boiling point binder, a part of the low boiling point binder may volatilize depending on the drying conditions. Therefore, the ratio of each component constituting the layer 31 may vary according to the aforementioned drying conditions. For example, even in the case of the layer 31 formed of the same varnish, the higher the drying temperature and the longer the drying time, the more the content of the metal fine particles and the content of the pyrolytic binder in the entire layer 31 become. Therefore, the drying conditions are preferably set so that the contents of the metal fine particles and the pyrolytic binder in the layer 31 become desired amounts.
As the base separator, a plastic film, paper, or the like, which is surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent, with polyethylene terephthalate (PET), polyethylene, polypropylene, or the like, can be used.
As a method for producing the heat bonding sheets 3,3 ', for example, a method for producing the heat bonding sheets 3, 3' by mixing the above-described respective components with a mixer and subjecting the resultant mixture to press molding is also suitable. Examples of the mixer include a planetary mixer.
The thickness of the heat bonding sheets 3 and 3' at 23 ℃ before heating is preferably 5 to 100 μm, more preferably 10 to 80 μm. When the thickness at 23 ℃ is 5 μm or more, bleeding can be further suppressed. On the other hand, when the thickness is 100 μm or less, the occurrence of a tilt during the heat bonding can be further suppressed.
(cutting tape)
The dicing tape 11 is configured such that the pressure-sensitive adhesive layer 2 is laminated on the base material 1.
The base material 1 is a strength base of the heat bonding sheets 10 and 12 with dicing tape, and preferably has ultraviolet transparency. Examples of the substrate 1 include: polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homo-polypropylene, polybutene, and polymethylpentene; polyesters such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene- (meth) acrylic acid copolymers, ethylene- (meth) acrylate (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethanes, polyethylene terephthalate, and polyethylene naphthalate; polycarbonate, polyimide, polyether ether ketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aramid (paper), glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, metal (foil), paper, and the like.
Examples of the material of the substrate 1 include polymers such as crosslinked products of the above resins. The plastic film may be used without stretching, or a plastic film subjected to uniaxial or biaxial stretching treatment may be used as necessary. With the resin sheet provided with heat shrinkability by stretching or the like, the adhesive area between the adhesive layer 2 and the heat bonding sheets 3, 3' can be reduced by heat shrinking the base material 1 after dicing, and the semiconductor chips can be easily recovered.
The surface of the substrate 1 may be subjected to a conventional surface treatment such as a chemical treatment or a physical treatment such as a chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, or an ionizing radiation treatment in order to improve adhesion to an adjacent layer, holding properties, or the like; coating treatment with a primer (e.g., an adhesive substance described later).
The thickness of the substrate 1 is not particularly limited, and may be appropriately determined, and is usually about 5 to 200 μm.
The pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 2 is not particularly limited, and for example, a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber pressure-sensitive adhesive can be used. As the pressure-sensitive adhesive, acrylic adhesives based on acrylic polymers are preferred in view of cleaning ability of electronic parts such as semiconductor wafers and glass which are less likely to be contaminated with ultrapure water and organic solvents such as alcohols.
Examples of the acrylic polymer include acrylic polymers using as a monomer component 1 or 2 or more kinds of alkyl (meth) acrylates (e.g., linear or branched alkyl esters having 1 to 30 carbon atoms, particularly 4 to 18 carbon atoms, such as alkyl (meth) acrylates including methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl, tridecyl, tetradecyl, hexadecyl, octadecyl, and eicosyl esters) and cycloalkyl (meth) acrylates (e.g., cyclopentyl, cyclohexyl esters). The term (meth) acrylate refers to acrylate and/or methacrylate, and all of the terms (meth) acrylate and (meth) acrylate in the present invention have the same meaning.
The aforementioned acrylic polymer may contain, as necessary, units corresponding to other monomer components copolymerizable with the aforementioned alkyl (meth) acrylate or cycloalkyl ester for the purpose of modification of cohesion, heat resistance, and the like. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; anhydride monomers such as maleic anhydride and itaconic anhydride; hydroxyl group-containing monomers such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, (meth) sulfopropyl acrylate, and (meth) acryloyloxynaphthalenesulfonic acid; phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; acrylamide, acrylonitrile, and the like. These copolymerizable monomer components may be used in 1 or 2 or more. The amount of the copolymerizable monomer is preferably 40% by weight or less based on the total monomer components.
Further, the acrylic polymer may contain a polyfunctional monomer or the like as a comonomer component as necessary for crosslinking. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. These polyfunctional monomers may be used in 1 or 2 or more. The amount of the polyfunctional monomer used is preferably 30% by weight or less of the total monomer components in view of adhesion properties and the like.
The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of 2 or more monomers. The polymerization may be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, or the like. The content of the low molecular weight substance is preferably small in order to prevent contamination of a clean adherend and the like. From this point of view, the number average molecular weight of the acrylic polymer is preferably 10 ten thousand or more, more preferably about 20 to 300 ten thousand, and particularly preferably about 30 to 100 ten thousand.
In the above-mentioned adhesive, an external crosslinking agent may be suitably used in order to increase the number average molecular weight of an acrylic polymer or the like as a base polymer. Specific examples of the external crosslinking method include: a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine crosslinking agent and reacting them. When the external crosslinking agent is used, the amount thereof is suitably determined in accordance with the balance between the external crosslinking agent and the base polymer to be crosslinked, and further in accordance with the use as an adhesive. It is generally preferable to add about 5 parts by weight or less, and further 0.1 to 5 parts by weight, to 100 parts by weight of the base polymer. Further, in the binder, additives such as conventionally known various tackifiers and anti-aging agents may be used in addition to the above components as required.
The pressure-sensitive adhesive layer 2 may be formed using a radiation-curable pressure-sensitive adhesive. The radiation-curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays and easily reduce the adhesive strength, and by irradiating only the portion 2a of the pressure-sensitive adhesive layer 2 shown in fig. 2 corresponding to the work-piece-adhering portion with radiation, a difference in adhesive strength from the other portion 2b can be provided.
In addition, by curing the radiation-curable pressure-sensitive adhesive layer 2 in accordance with the heating bonding sheet 3' shown in fig. 2, the portion 2a having a significantly reduced adhesive strength can be easily formed. Since the heat bonding sheet 3 'is attached to the portion 2a which is cured and has a reduced adhesive force, the interface between the portion 2a of the adhesive layer 2 and the heat bonding sheet 3' has a property of being easily peeled off at the time of pickup. On the other hand, the portion not irradiated with the radiation has sufficient adhesive force, and the portion 2b is formed. Note that irradiation of the adhesive layer with radiation may be performed after cutting and before pickup.
As described above, in the pressure-sensitive adhesive layer 2 of the thermal bonding sheet 10 with a dicing tape shown in fig. 1, the portion 2b formed of the uncured radiation-curable pressure-sensitive adhesive is bonded to the thermal bonding sheet 3, and the holding force at the time of dicing can be ensured. In this way, the radiation curable pressure-sensitive adhesive can support the heat bonding sheet 3 for fixing a chip-shaped workpiece (semiconductor chip or the like) to an adherend such as a substrate with good adhesion/peeling balance. In the adhesive layer 2 of the thermal bonding sheet 11 with a dicing tape shown in fig. 2, the aforementioned portion 2b can fix a wafer ring.
The radiation-curable pressure-sensitive adhesive is not particularly limited as long as it has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. Examples of the radiation-curable pressure-sensitive adhesive include addition-type radiation-curable pressure-sensitive adhesives obtained by blending a radiation-curable monomer component and an oligomer component with the above-mentioned general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive and a rubber pressure-sensitive adhesive.
Examples of the radiation-curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1, 4-butanediol di (meth) acrylate. The radiation-curable oligomer component includes various oligomers such as urethane type, polyether type, polyester type, polycarbonate type, polybutadiene type, etc., and the molecular weight thereof is preferably in the range of about 100 to 30000. The amount of the radiation-curable monomer component and oligomer component to be blended may be determined as appropriate depending on the type of the pressure-sensitive adhesive layer, and the amount of the monomer component and oligomer component to be blended may be determined as appropriate to reduce the adhesive force of the pressure-sensitive adhesive layer. Usually, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight, based on 100 parts by weight of a base polymer such as an acrylic polymer constituting the binder.
In addition, examples of the radiation-curable pressure-sensitive adhesive include, in addition to the additive radiation-curable pressure-sensitive adhesive described above: an internal radiation curing type adhesive using a polymer having a carbon-carbon double bond in a side chain or a main chain of the polymer or at a terminal of the main chain as a base polymer. The internal radiation-curable pressure-sensitive adhesive does not need to contain or contain a large amount of oligomer components and the like which are low-molecular components, and therefore, the oligomer components and the like do not move in the pressure-sensitive adhesive over time, and a pressure-sensitive adhesive layer having a stable layer structure can be formed, which is preferable.
The base polymer having a carbon-carbon double bond may be a polymer having a carbon-carbon double bond and having an adhesive property, without any particular limitation. As such a base polymer, an acrylic polymer is preferably used as a basic skeleton. The basic skeleton of the acrylic polymer is exemplified by the acrylic polymers described above.
The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed, and introduction of a carbon-carbon double bond into a polymer side chain is easy in view of molecular design. For example, the following methods can be mentioned: a method in which an acrylic polymer and a monomer having a functional group are copolymerized in advance, and then a compound having a functional group reactive with the functional group and a carbon-carbon double bond is subjected to polycondensation or addition reaction while maintaining the radiation curability of the carbon-carbon double bond.
Examples of combinations of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridine group, a hydroxyl group and an isocyanate group, and the like. Among these combinations of functional groups, a combination of a hydroxyl group and an isocyanate group is preferable from the viewpoint of easiness of follow-up reaction. In addition, as long as the acrylic polymer having the carbon-carbon double bond is produced by a combination of these functional groups, the functional groups may be present on either side of the acrylic polymer and the compound, and in the preferred combination, the acrylic polymer has a hydroxyl group and the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, and the like. Further, as the acrylic polymer, a polymer obtained by copolymerizing the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, an ether compound of diethylene glycol monovinyl ether, or the like can be used.
The internal radiation-curable pressure-sensitive adhesive may use the base polymer having a carbon-carbon double bond (particularly, an acrylic polymer) alone, or may contain the radiation-curable monomer component or oligomer component to such an extent that the properties are not deteriorated. The radiation-curable oligomer component and the like are usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
The radiation-curable pressure-sensitive adhesive contains a photopolymerization initiator when cured by ultraviolet rays or the like. Examples of the photopolymerization initiator include α -ketol compounds such as 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α -hydroxy- α, α' -dimethylacetophenone, 2-methyl-2-hydroxypropiophenone, and 1-hydroxycyclohexyl phenyl ketone; acetophenone compounds such as methoxyacetophenone, 2-dimethoxy-2-phenylacetophenone, 2-diethoxyacetophenone and 2-methyl-1- [4- (methylthio) -phenyl ] -2-morpholinopropan-1-one; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, and anisoin methyl ether; ketal compounds such as benzil dimethyl ketal; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; optically active oxime compounds such as 1-benzophenone-1, 1-propanedione-2- (O-ethoxycarbonyl) oxime; benzophenone-based compounds such as benzophenone, benzoylbenzoic acid, and 3, 3' -dimethyl-4-methoxybenzophenone; thioxanthone compounds such as thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2, 4-dimethylthioxanthone, isopropylthioxanthone, 2, 4-dichlorothioxanthone, 2, 4-diethylthioxanthone and 2, 4-diisopropylthioxanthone; camphorquinone; a halogenated ketone; acyl phosphine oxides; acyl phosphonates and the like. The amount of the photopolymerization initiator is, for example, about 0.05 to 20 parts by weight per 100 parts by weight of a base polymer such as an acrylic polymer constituting the adhesive.
Examples of the radiation-curable pressure-sensitive adhesive include: JP-A60-196956 discloses a rubber adhesive or an acrylic adhesive containing an addition polymerizable compound having 2 or more unsaturated bonds, a photopolymerizable compound such as an alkoxysilane having an epoxy group, and a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine, and an onium salt compound.
The radiation-curable pressure-sensitive adhesive layer 2 may contain a compound that is colored by irradiation with radiation, if necessary. By including a compound colored by irradiation with radiation in the pressure-sensitive adhesive layer 2, only the portion irradiated with radiation can be colored. That is, the portion 2a corresponding to the work attaching portion 3a shown in fig. 1 can be colored. Therefore, it is possible to directly determine whether or not the pressure-sensitive adhesive layer 2 has been irradiated with radiation by visual inspection, and the work sticking portion 3a is easily recognized, so that the work is easily stuck. In addition, when the semiconductor chip is detected by the optical sensor or the like, the detection accuracy is improved, and the semiconductor chip is not erroneously picked up. The compound colored by irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but becomes colored by irradiation with radiation, and examples thereof include leuco dyes and the like. The ratio of the compound to be colored by irradiation with radiation may be appropriately set.
The thickness of the pressure-sensitive adhesive layer 2 is not particularly limited, and is preferably about 1 to 50 μm from the viewpoints of prevention of chipping of the cut surface of the chip, compatibility of fixing and holding the heat bonding sheets 3 and 3', and the like. Preferably 2 to 30 μm, and more preferably 5 to 25 μm.
The dicing tape 11 of the present embodiment can be produced, for example, as follows.
First, the substrate 1 can be formed by a conventionally known film forming method. Examples of the film forming method include a rolling film forming method, a casting method in an organic solvent, a inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination method.
Next, a pressure-sensitive adhesive composition solution is applied to the substrate 1 to form a coating film, and then the coating film is dried under predetermined conditions (if necessary, crosslinked by heating) to form the pressure-sensitive adhesive layer 2. The coating method is not particularly limited, and examples thereof include roll coating, screen coating, and gravure coating. The drying is carried out at a drying temperature of 80 to 150 ℃ for a drying time of 0.5 to 5 minutes. Alternatively, the pressure-sensitive adhesive layer 2 may be formed by applying the pressure-sensitive adhesive composition to the separator to form a coating film, and then drying the coating film under the above-described drying conditions. Thereafter, the adhesive layer 2 is bonded to the substrate 1 together with the separator. Thereby, the dicing tape 11 is produced.
The heat- bonding sheets 10 and 12 with the dicing tape can be manufactured by a conventional method. The thermal bonding sheet 10 with a dicing tape is manufactured by, for example, bonding the adhesive layer 2 of the dicing tape 11 and the thermal bonding sheet 3.
In the heat bonding sheet 10 with a dicing tape, the heat bonding sheet 3 is preferably covered with a barrier film. For example, the following methods can be mentioned: a method of bonding the dicing tape 11 and the heat bonding sheet 3, peeling off the base separator laminated on the heat bonding sheet 3, and attaching a separator to the exposed surface of the heat bonding sheet 3 of the heat bonding sheet 10 with the dicing tape after peeling off the base separator. That is, the dicing tape 11, the heat bonding sheet 3, and the separator are preferably stacked in this order.
In the above-described embodiment, a heating bonding sheet with a dicing tape in which a dicing tape and a heating bonding sheet are stacked has been described. However, the heat bonding sheet of the present invention may be provided in a state where it is not bonded to the dicing tape.
When the heat bonding sheet is in a form not adhering to the dicing tape, it is preferable to form the heat bonding sheet with the separator on both surfaces thereof sandwiched between 2 sheets of separators. That is, it is preferable to use a thermal bonding sheet having a first separator, a thermal bonding sheet, and a second separator laminated in this order, and having separators on both surfaces of the first separator and the second separator.
Fig. 3 is a schematic cross-sectional view showing an embodiment of a heat bonding sheet having a separator on both sides.
The thermal bonding sheet 30 with a separator on both sides shown in fig. 3 has a structure in which a 1 st separator 32, a thermal bonding sheet 3, and a 2 nd separator 34 are sequentially laminated. As the 1 st barrier film 32 and the 2 nd barrier film 34, the same barrier films as the substrate barrier film can be used.
When the heat bonding sheet is in a form in which the dicing tape is not bonded, a separator may be laminated on only one surface of the heat bonding sheet.
(method of manufacturing semiconductor device)
The method for manufacturing a semiconductor device according to the present embodiment includes the steps of: a step of preparing the sheet for heat bonding, and
and a heat bonding step of heat-bonding a semiconductor chip to an adherend via the heat bonding sheet (hereinafter also referred to as embodiment 1).
The method for manufacturing a semiconductor device according to the present embodiment may further include: a step of preparing the above-described heat-bonding sheet with dicing tape,
A bonding step of bonding the thermal bonding sheet of the thermal bonding sheet with dicing tape to the back surface of the semiconductor wafer,
A dicing step of dicing the semiconductor wafer together with the thermal bonding sheet to form chip-shaped semiconductor chips,
A picking-up step of picking up the semiconductor chip together with the thermal bonding sheet from the thermal bonding sheet with dicing tape, and
and a heat bonding step of heat-bonding the semiconductor chip to an adherend via the heat bonding sheet (hereinafter also referred to as embodiment 2).
The method for manufacturing a semiconductor device according to embodiment 1 is different from the method for manufacturing a semiconductor device according to embodiment 2 in that a heat bonding sheet with a dicing tape is used, and the method for manufacturing a semiconductor device according to embodiment 1 uses a heat bonding sheet alone. The method for manufacturing a semiconductor device according to embodiment 1 may be the same as the method for manufacturing a semiconductor device according to embodiment 2, provided that the step of bonding the thermal bonding sheet to the dicing tape is performed after the thermal bonding sheet is prepared. Therefore, a method for manufacturing a semiconductor device according to embodiment 2 will be described below.
In the method of manufacturing a semiconductor device according to the present embodiment, first, the thermal bonding sheets 10 and 12 with dicing tapes are prepared (preparation step). The heat bonding sheets 10 and 12 with dicing tapes can be used as follows by appropriately peeling the release films optionally provided on the heat bonding sheets 3 and 3'. Hereinafter, a case in which the thermal bonding sheet 10 with a dicing tape is used will be described as an example with reference to fig. 4.
First, the semiconductor wafer 4 is pressed against the semiconductor wafer bonding portion 3a of the thermal bonding sheet 3 in the thermal bonding sheet 10 with a dicing tape, and is bonded, held, and fixed (bonding step). This step is performed while being pressed by a pressing means such as a pressure roller. The temperature for fixing is not particularly limited, and is preferably in the range of 23 to 90 ℃.
As the semiconductor wafer 4, it is preferable that an electrode pad (pad) is formed on one surface and a silver thin film is formed on the outermost surface of the other surface (hereinafter, also referred to as the back surface). The thickness of the silver thin film is, for example, 10nm to 1000 nm. Further, a titanium thin film may be formed between the semiconductor wafer 4 and the silver thin film. The thickness of the titanium thin film is, for example, 10nm to 1000 nm. When the silver thin film is formed, the semiconductor chip 5 and the thermal bonding sheet 3 can be firmly thermally bonded in a thermal bonding step described later. In addition, when the titanium thin film is formed, the reliability of the electrode is improved. The silver thin film and the titanium thin film may be formed by vapor deposition, for example.
Next, the semiconductor wafer 4 is diced (dicing step). In this way, the semiconductor wafer 4 is cut into pieces having a predetermined size, and the semiconductor chips 5 are manufactured. The dicing method is not particularly limited, and for example, dicing can be performed from the circuit surface side of the semiconductor wafer 4 by a conventional method. In this step, for example, a cutting method called full cut (full cut) in which cutting is performed until the heating joining sheet 10 with the dicing tape is attached may be employed. The cutting device used in this step is not particularly limited, and a conventionally known device can be used. Further, since the semiconductor wafer 4 is bonded and fixed by the thermal bonding sheet 10 with a dicing tape, chipping and scattering of chips can be suppressed, and breakage of the semiconductor wafer 4 can be suppressed.
Next, the semiconductor chip 5 is picked up in order to peel the semiconductor chip 5 adhesively fixed to the thermal bonding sheet 10 with a dicing tape (pickup step). The method of picking up is not particularly limited, and various conventionally known methods can be employed. Examples thereof include: and a method of lifting up the respective semiconductor chips 5 from the side of the thermal bonding sheet 10 with a dicing tape by a needle, and picking up the lifted-up semiconductor chips 5 by a pickup device.
The pick-up condition is preferably 5 to 100 mm/sec, more preferably 5 to 10 mm/sec, in view of preventing chipping.
Here, in the case where the pressure-sensitive adhesive layer 2 is of an ultraviolet-curable type, the pickup is performed after the pressure-sensitive adhesive layer 2 is irradiated with ultraviolet rays. This reduces the adhesive strength of the pressure-sensitive adhesive layer 2 to the thermal bonding sheet 3, and facilitates the peeling of the semiconductor chip 5. As a result, the semiconductor chip 5 can be picked up without being damaged. Conditions such as irradiation intensity and irradiation time in the ultraviolet irradiation are not particularly limited, and may be appropriately set as needed. As the light source for ultraviolet irradiation, a known light source can be used. In the case where the pressure-sensitive adhesive layer is irradiated with ultraviolet rays and cured in advance, and the cured pressure-sensitive adhesive layer is bonded to the heat bonding sheet, the ultraviolet irradiation is not required here.
Next, the picked-up semiconductor chip 5 is die-bonded (heat-bonded) to the adherend 6 with the heat-bonding sheet 3 interposed therebetween (heat-bonding step). The adherend 6 may be a lead frame, a TAB film, a substrate, a separately produced semiconductor chip, or the like. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or may be a non-deformable adherend (semiconductor wafer or the like) that is hardly deformed.
Examples of the lead frame include metal lead frames such as Cu lead frames and 42 alloy lead frames. As the substrate, a conventionally known substrate can be used. Examples of the organic substrate include organic substrates made of glass epoxy resin, BT (bismaleimide triazine), polyimide, and the like. In the case of using a metal lead frame, the metal lead frame can be integrated with the fine metal particles by thermal bonding. The substrate may be an insulated circuit board in which a copper circuit board is laminated on an insulated substrate such as a ceramic board. By using the insulating circuit board, a power semiconductor device for controlling and supplying power, for example, can be manufactured.
In the heat bonding step, the metal fine particles are sintered by heating, and the pyrolytic binder is pyrolyzed as necessary. In addition, the residual low-boiling-point binder which is not completely volatilized in the drying step is volatilized. The heating may be performed at a temperature of preferably 180 to 400 ℃, more preferably 190 to 370 ℃, and still more preferably 200 to 350 ℃. The heating may be carried out for a time of preferably 0.3 to 300 minutes, more preferably 0.5 to 240 minutes, and still more preferably 1 to 180 minutes. In addition, the heat bonding may be performed under a pressurized condition. The pressurizing condition is preferably 1 to 500kg/cm2More preferably 5 to 400kg/cm2Within the range of (1). The thermal joining under pressure may be, for exampleThe method is carried out in a device which can simultaneously perform heating and pressurization, such as a flip chip bonding machine. In addition, parallel plate pressing may be performed.
Next, as shown in fig. 4, as necessary, the tip of the terminal portion (inner lead) of the adherend 6 is electrically connected to an electrode pad (not shown) on the semiconductor chip 5 by a bonding wire 7 (wire bonding step). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature for wire bonding may be in the range of 23 to 300 ℃, preferably 23 to 250 ℃. The heating is carried out for several seconds to several minutes. The wire connection may be performed by using a combination of vibration energy based on ultrasonic waves and crimping energy based on application of pressure in a state of being heated to be within the aforementioned temperature range.
Next, as shown in fig. 4, the semiconductor chip 5 is encapsulated with an encapsulating resin 8 as necessary (encapsulating step). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6. This step can be performed by molding the sealing resin with a mold. As the encapsulating resin 8, for example, an epoxy resin is used. The heating temperature in resin encapsulation is usually 175 ℃ for 60 to 90 seconds, but the present invention is not limited thereto, and curing may be carried out at 165 to 185 ℃ for several minutes, for example. Thereby, the encapsulating resin 8 is cured. In the present sealing step, a method of embedding the semiconductor chip 5 in a sheet-like sealing sheet may be employed (see, for example, japanese patent application laid-open No. 2013-7028). In addition to molding of the sealing resin by a mold, a gel sealing type in which a silicone gel is poured into a box-shaped container may be used.
Next, if necessary, heating is performed to completely cure the encapsulating resin 8 that was not sufficiently cured in the encapsulating step (post-curing step). The heating temperature in this step varies depending on the type of the encapsulating resin, and is, for example, in the range of 165 to 185 ℃ and the heating time is about 0.5 to 8 hours.
The thermal bonding sheet and the thermal bonding sheet with a dicing tape according to the present invention can be suitably used also in the case where a plurality of semiconductor chips are stacked and three-dimensionally mounted. In this case, the thermal bonding sheet and the spacer may be stacked between the semiconductor chips, or only the thermal bonding sheet may be stacked between the semiconductor chips without stacking the spacer, and the manufacturing conditions and the application may be appropriately changed.
The heat bonding sheet and the heat bonding sheet with a dicing tape according to the present invention are not limited to the above-described examples, and can be used for heat bonding 2 objects.
[ examples ]
The present invention will be described in detail below with reference to examples, but the present invention is not limited to the following examples as long as the gist of the present invention is not exceeded.
The components used in the examples are explained below.
Copper particles A: copper particles having an average particle diameter of 200nm and an average crystallite diameter of 31nm and produced by the metal mining industry from Mitsui
Paste containing metal fine particles a: the amount of the low boiling point binder contained in ANP-1 (a paste in which nano-sized silver particles are dispersed in a low boiling point binder) prepared by nano-particle research is suitably adjusted.
Pyrolytic binder a (polypropylene carbonate resin): QPAC40 manufactured by Empower corporation, solid at 23 ℃
Pyrolytic binder B (acrylic resin): MM-2002-1 manufactured by Bin Kabushiki Kaisha, solid at 23 deg.C
Low boiling point binder a (isobornyl cyclohexanol): terusolve MTPH manufactured by Nippon Terpene Chemicals, Inc. and being liquid at 23 deg.C
An organic solvent A: methyl Ethyl Ketone (MEK)
[ production of sheet for Heat bonding ]
The components and the solvent shown in Table 1 were put into a stirring vessel of a complex mixer (hybrid mixer) (HM-500, manufactured by KEYENCE) at the compounding ratio shown in Table 1, and stirred/mixed for 3 minutes in a stirring mode.
The resulting varnish was coated on a release-treated film (MRA 50 manufactured by Mitsubishi Plastics, inc.) and dried. The drying conditions are shown in table 1. Thus, sheets for thermal bonding having a thickness of 40 μm were obtained in examples and comparative examples.
[ measurement Using nanoindenter ]
A silicon chip (silicon chip having a thickness of 350 μm, a length of 5mm and a width of 5mm) was prepared, the back surface of which was formed with a Ti layer (thickness 50nm) and an Ag layer (thickness 100nm) in this order. The heat bonding sheets of examples and comparative examples were bonded to the Ag layer surface of the prepared silicon chip.
The bonding conditions were 70 ℃ temperature, 0.3MPa pressure, and 10 mm/sec speed.
A copper plate (thickness of copper plate: 3mm) entirely covered with an Ag layer (thickness: 5 μm) was prepared. The heat bonding sheet with the silicon chip was bonded to the prepared copper plate under the following conditions. Thus, a sample for evaluation was obtained. A sintering apparatus (Hakuto co., ltd. system, HTM-3000) was used for bonding.
< bonding conditions >
After heating from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa (flat press), the plate was held at 300 ℃ for 2.5 minutes. Thereafter, the air was cooled to 170 ℃ and thereafter, water was cooled to 80 ℃. The water cooling is performed by a water-cooled cooling plate attached to the inside of the pressurizing plate. Example 4 was bonded under a nitrogen atmosphere.
Thereafter, the sample was embedded in an epoxy resin (cured resin (two-component type, SCANDIPLEX a, SCANDIPLEX B) of SCANDIA corporation).
< embedding conditions >
SCANDIPLEX A: scandiplex ═ 9: 4 (volume ratio)
Standing at 45 ℃ for 1-2 hours
After the embedding, the cross section of the silicon chip on the diagonal line was exposed by mechanical polishing. For mechanical polishing, rough polishing is performed, and then precision polishing is performed. The grinding apparatus for rough grinding was RotoPol-31 manufactured by Struers. In addition, a precision polishing apparatus manufactured by ALLIED, MultiPrep, was used as a polishing apparatus for precision polishing. The rough polishing conditions and the precise polishing conditions were as follows.
< conditions of coarse grinding >
Water-resistant abrasive paper: struers corporation, SiCfoil #220
Disc rotation speed: 150rpm
< precision polishing conditions >
Water-resistant abrasive paper: struers corporation, SiCfoil #220, #1000
Disc rotation speed: 100rpm
Loading: 200 to 500g
Thereafter, the vicinity of the center of the exposed surface is ion-polished. The apparatus was used with a section polisher SM-09010 manufactured by JEOL, and the ion polishing conditions were as follows.
< ion polishing conditions >
Accelerating voltage of 5-6 kV
The processing time is 8-10 hours
The flying-off amount of the self-shielding plate is 25-50 μm
The exposed sintered layer was press-fitted at the center of the cross section and 3 points 20 μm to the left and right from the center under the following press-fitting conditions using a nanoindenter (manufactured by hysitron inc., triboinderer). Thereby, a load-displacement curve was obtained. In addition, a projected image of the indenter (an image of a trace appearing by the pressing of the indenter) was obtained.
< Press-in Condition >
Using a pressure head: berkovich (triangular pyramid type)
The determination method comprises the following steps: single indentation measurement mode
Measuring temperature: 25 ℃ (room temperature)
Setting the pressing depth: 2 μm
And obtaining the values of hardness, elastic modulus and deformation amount by calculation according to the load-displacement curve and the projection area of the pressure head. The hardness and the elastic modulus were calculated in detail by an apparatus. The detailed calculation method is specifically described in, for example, Handbook of Micro/nano simulation (Second Edition) Edited by Bharat Bhushan, CRC Press (ISBN 0-8493-. The results are shown in Table 1.
Here, a load-displacement curve is explained. Fig. 5 is a diagram showing an example of a load-displacement curve. The horizontal axis represents a displacement amount (press-in amount), and the vertical axis represents a load. At the time of press-in, a load is applied while press-in, and therefore, the upper right is plotted from the position where the displacement amount is 0 and the load is 0. Thereafter, when the press-fitting was released at the time when the displacement amount became 2 μm, a part of the deformed bonding layer was restored. At this time, the displacement when the load was 0 was read as the deformation amount.
Next, a projection image of the indenter will be described. Fig. 6 is a diagram for explaining a projection image of the indenter. In fig. 6, the lower layer is a copper plate, the middle layer is a sintered layer, and the upper layer is a silicon chip. The black triangles on the sintered layer are traces (projected images) after the indenter was pressed in. The projected area of the indenter is determined by the area of the image. Fig. 6 is a diagram for explaining a projection image of an indenter using a nanoindenter, and is not a projection image diagram of the indenter of the example and the comparative example.
[ residual bonding area ratio after reliability test ]
The evaluation samples of examples and comparative examples were prepared by the same method as that for the measurement using the nanoindenter.
Next, the sample for evaluation was put into a thermal shock tester (TSE-103 ES manufactured by ESPEC Corp.) and subjected to thermal shock of-40 ℃ to 200 ℃ for 100 cycles. Here, the temperature was maintained at-40 ℃ and 200 ℃ for 15 minutes, respectively.
After 100 cycles, imaging was performed to confirm a portion where the silicon chip and the copper plate were bonded through the sintered layer using an ultrasonic tomography apparatus [ SAT ] (FineSAT II manufactured by Hitachi Kenki FineTech co., ltd.). The transducer (probe) used was PQ-50-13: WD [ frequency 50MHz ].
In the obtained image, the area of the portion where the bonding remains (remaining area) is obtained, and the ratio of the remaining area to the entire area (remaining bonding area ratio) is calculated. The residual joint area ratio was evaluated as "o" when it was 50% or more, and as "x" when it was less than 50%. The results are shown in Table 1. In the image obtained by the ultrasonic tomography apparatus, the portion where the silicon chip and the substrate were peeled off was seen as white, and the portion where the bonding remained was seen as gray.
[ Table 1]
In comparative example 1, an acrylic resin having a lower thermal decomposition property than polycarbonate was used as the thermally decomposable polymer. In addition, the content of the pyrolyzable polymer was more than that of the example. Further, the drying conditions at the time of sheet formation were milder than those of examples 2 and 3. Therefore, the low boiling point binder remained more than in examples 2 and 3. For the above reasons, it is considered that comparative example 1 also retained a large amount of the pyrolyzable polymer and the low boiling point binder in the sheet after firing, as compared with the examples. As a result, it is considered that the sintered layer of comparative example 1 becomes brittle.
Description of the reference numerals
1 base material
2 adhesive layer
3. 3' Heat bonding sheet
4 semiconductor wafer
5 semiconductor chip
6 adherend
7 bonding wire
8 encapsulating resin
10. 12 heating joining sheet with cutting belt
11 cutting belt
30 Heat-bondable sheet having separator on both surfaces
31 become a layer of a sintered layer by heating
32 st 1 isolating film
34 No. 2 isolation film
Claims (5)
1. A heat-bonding sheet characterized by having a layer which becomes a sintered layer by heating,
the hardness of the layer after heating by the following heating condition A is in the range of 1.5GPa to 10GPa as measured by a nanoindenter,
< heating Condition A >
Heating the layer from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, holding the layer at 300 ℃ for 2.5 minutes,
the layer comprises a pyrolyzable binder that is solid at 23 ℃.
2. A heat-bonding sheet characterized by having a layer which becomes a sintered layer by heating,
the elastic modulus of the layer after heating under the following heating condition A is in the range of 30GPa to 150GPa as measured by a nanoindenter,
< heating Condition A >
Heating the layer from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, holding the layer at 300 ℃ for 2.5 minutes,
the layer comprises a pyrolyzable binder that is solid at 23 ℃.
3. The sheet for thermal bonding according to claim 1, wherein the layer has a deformation amount in a range of 1600nm to 1900nm as measured by the deformation amount measuring method B,
< method of measuring distortion amount B >
(1) A step of heating the layer from 80 ℃ to 300 ℃ at a heating rate of 1.5 ℃/sec under a pressure of 10MPa, and then holding the layer at 300 ℃ for 2.5 minutes to obtain a layer for measuring a deformation,
(2) and a step of pressing the layer for measuring deformation into the substrate with an indentation depth of 2 μm using a nanoindenter, and measuring the amount of deformation after the pressing is released and before the pressing.
4. The sheet for thermal bonding according to any one of claims 1 to 3, wherein the layer contains fine metal particles,
the metal fine particles are at least 1 selected from the group consisting of silver, copper, an oxide of silver, and an oxide of copper.
5. A heat bonding sheet with a dicing tape, comprising:
a dicing tape, and
the heat bonding sheet according to any one of claims 1 to 4 laminated on the dicing tape.
Applications Claiming Priority (5)
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JP2015-194206 | 2015-09-30 | ||
JP2015194206 | 2015-09-30 | ||
JP2016184505A JP6858520B2 (en) | 2015-09-30 | 2016-09-21 | Sheet for heat bonding and sheet for heat bonding with dicing tape |
JP2016-184505 | 2016-09-21 | ||
PCT/JP2016/078570 WO2017057429A1 (en) | 2015-09-30 | 2016-09-28 | Thermal bonding sheet, and thermal bonding sheet with dicing tape |
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CN108174617A CN108174617A (en) | 2018-06-15 |
CN108174617B true CN108174617B (en) | 2021-06-01 |
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US (1) | US10707184B2 (en) |
EP (1) | EP3358608A4 (en) |
JP (1) | JP6858520B2 (en) |
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JP6682235B2 (en) * | 2014-12-24 | 2020-04-15 | 日東電工株式会社 | Heat bonding sheet and heat bonding sheet with dicing tape |
JP6967839B2 (en) * | 2016-03-23 | 2021-11-17 | 日東電工株式会社 | Heat bonding sheet, heat bonding sheet with dicing tape, manufacturing method of bonded body, power semiconductor device |
JP6864505B2 (en) | 2016-06-24 | 2021-04-28 | 日東電工株式会社 | Heat-bonding sheet and heat-bonding sheet with dicing tape |
CN110476233B (en) * | 2017-03-29 | 2023-09-29 | 日东电工株式会社 | Heating bonding sheet and dicing tape with heating bonding sheet |
JP7007827B2 (en) * | 2017-07-28 | 2022-01-25 | 日東電工株式会社 | Die bond film, dicing die bond film, and semiconductor device manufacturing method |
EP3711879A4 (en) * | 2017-11-13 | 2021-08-25 | Nitto Denko Corporation | Composition for sinter bonding, sheet for sinter bonding, and dicing tape having sheet for sinter bonding |
CN111417735B (en) | 2017-12-18 | 2022-10-04 | Dic株式会社 | Copper fine particle sintered body |
KR102573004B1 (en) * | 2018-11-29 | 2023-08-30 | 가부시끼가이샤 레조낙 | Manufacturing method of junction body and semiconductor device, and copper paste for junction |
JP7170968B2 (en) * | 2019-02-22 | 2022-11-15 | 株式会社大阪ソーダ | Joining method using conductive adhesive |
JP7198693B2 (en) * | 2019-03-15 | 2023-01-04 | 日東電工株式会社 | Sheet for sinter bonding and sheet for sinter bonding with substrate |
JP2023098498A (en) * | 2021-12-28 | 2023-07-10 | 三菱マテリアル株式会社 | Bonding sheet, and method for producing bonded body |
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JP6858520B2 (en) | 2021-04-14 |
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CN108174617A (en) | 2018-06-15 |
US20180269175A1 (en) | 2018-09-20 |
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US10707184B2 (en) | 2020-07-07 |
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