CN108172634A - 一种光电探测器 - Google Patents

一种光电探测器 Download PDF

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CN108172634A
CN108172634A CN201711381838.XA CN201711381838A CN108172634A CN 108172634 A CN108172634 A CN 108172634A CN 201711381838 A CN201711381838 A CN 201711381838A CN 108172634 A CN108172634 A CN 108172634A
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刘江涛
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Guizhou Minzu University
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Abstract

本发明提供了一种光电探测器，包括：光电探测层和第一电极层，第一电极层设置于光电探测层一侧表面，得到光电探测结构；光电探测层由二维材料或二维材料异质结构制备而成。由二维材料或二维材料异质结构对光敏感的同时极薄（厚度小于1nm（纳米）），以此与辐射粒子发生反应的几率极小，误触发几率极小；另外，二维材料平面内原子间作用力较强，结构稳定，辐射粒子产生的损伤较小。

Description

一种光电探测器
技术领域
本发明涉及半导体技术领域，尤其涉及一种光电探测器。
背景技术
随着航天航空技术的发展，各类新型的人造卫星、航天器被投放到太空当中。为了实现更多的功能，人造卫星、航天器都携带了大量的电子、光电子器件。然而，太空中的航天器会受到各种辐射，这些辐射会对集成电子芯片造成严重的损伤，影响到器件的性能，甚至会损毁这些集成电子芯片，造成不可挽回的损失。
另外，在核工业中，同样需要大量的智能化芯片，特别是核事故抢险中，需要使用机器人等精密电子、光电子器件，核武器***同样也会对各种电子、光电子元器件构成严重威胁。在使用过程中，各电子器件也会受到辐射影响，从而造成设备的失灵，探测器是其中一个较为关键的器件。
发明内容
针对上述问题，本发明提供了一种光电探测器，有效解决了现有光电探测器不能抗辐射的技术问题。
本发明提供的技术方案如下：
一种光电探测器，包括：光电探测层和第一电极层，所述第一电极层设置于所述光电探测层一侧表面，得到光电探测结构；
所述光电探测层由二维材料或二维材料异质结构制备而成。
进一步优选地，所述二维材料为石墨烯或二硫化钼或二硫化钨。
进一步优选地，所述二维材料异质结构为石墨烯-二硫化钼，或石墨烯-二硫化钨，或二硫化钼-二硫化钨。
进一步优选地，所述光电探测器中还包括一基底层和第二电极，所述基底层与光电探测层之间通过空气层隔离，所述第一电极于所述空气层四周位于所述基底层和光电探测层之间。
进一步优选地，所述光电探测器由多个光电探测结构叠加而成，前一光电探测结构中的电极层与后一光电探测结构中的光电探测层通过一绝缘层连接，各光电探测结构中的光电探测层之间通过一空气层隔离。
进一步优选地，所述光电探测器中还包括一密闭抗辐射容器，各光电探测结构置于所述密闭抗辐射容器中。
本发明提供的光电探测器带来的有益效果在于：
在本发明中，光电探测层由二维材料或二维材料异质结构构成，由二维材料或二维材料异质结构对光敏感的同时极薄（厚度小于1nm（纳米）），以此与辐射粒子发生反应的几率极小，误触发几率极小；另外，二维材料平面内原子间作用力较强，结构稳定，辐射粒子产生的损伤较小。
其次，在本发明中，利用空气层将基底层与光电探测层隔开，有利于减小辐射粒子与基底层相互作用时产生的二次辐射、缺陷、电离中心等对沟道层和栅极的影响，提高器件的可靠性。
再次，在本发明中的光电探测器由2个或多个光电探测结构叠加而成。由于辐射粒子同时与多个光电探测层反应产生赝信号的几率很小，以此大大减小或排除了由于辐射所导致赝信号的概率。需要特别指出的是，传统的光电探测器通常较厚，效率较低，辐射粒子与工作介质同时反应产生赝信号的几率较大，光通过一层工作介质后到达第二层是光强将大大减弱，采用叠加方式提高器件的可靠性并不合适，而二维材料或二维材料异质结光吸收率合适（2.3-20%），效率高，同时产生赝信号的几率小，可以采用叠加设计方式。
最后，将光电探测结构置于真空密闭抗辐射容器中得到光电探测器，有效降低探测器的照射剂量的同时，减小辐射粒子与空气反应所产生的二次辐射对探测器的影响。
附图说明
下面将以明确易懂的方式，结合附图说明优选实施方式，对上述特性、技术特征、优点及其实现方式予以进一步说明。
图1为本发明中光电探测器一种实施方式结构示意图；
图2为本发明中光电探测器另一种实施方式结构示意图；
图3为本发明中光电探测器另一种实施方式结构示意图；
图4为本发明中光电探测器另一种实施方式结构示意图。
附图标记：
1-光电探测层，2-第一电极，3-基底层，4-第二电极，5-空气层，6-绝缘层，7-第一空气层，8-第二空气层，9-第二光电探测层，10-第三电极，11-第一光电探测层，12-抗辐射容器。
具体实施方式
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对照附图说明本发明的具体实施方式。显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，并获得其他的实施方式。
如图1所示为本发明提供的光电探测器一种实施方式结构示意图，从图中可以看出，在该光电探测器中包括：光电探测层1和第一电极层2，所述第一电极层设置于光电探测层一侧表面，得到光电探测结构；光电探测层由二维材料或二维材料异质结构制备而成。
在本实施方式中，光电探测层由二维材料制备而成，具体该二维材料为石墨烯/二硫化钼/二硫化钨等，由各二维材料的光学、电学、力学、热学性质，与辐射粒子发生反应的几率极小，大大提高了光电探测器的抗辐射能力。在一实例中，光电探测层由单石墨烯制备而成，在工作过程中，当有光入射时，石墨烯的阻值随着光照的变化而改变，以此通过电极测量石墨烯的阻值即可测定入射光的强度。
在本实施方式中，光电探测层由二维材料异质结构制备而成，具体该二维材料异质结构为石墨烯-二硫化钼，或石墨烯-二硫化钨，或二硫化钼-二硫化钨等。在一实例中，光电探测层由单石墨烯-二硫化钼构成，在工作过程中，当有光入射时，单石墨烯-二硫化钼的阻值将改变，以此通过电极测量单石墨烯-二硫化钼的阻值即可测定入射光的强度。
对上述实施方式进行改进得到本实施方式，如图2所示，在本实施方式中，光电探测器中除了包括光电探测层1和第一电极层2之外，还包括一基底层3和第二电极4，其中，基底层3与光电探测层之间通过空气层5隔离，第一电极于空气层四周位于基底层和光电探测层之间，以此利于减小辐射与基底相互作用时所产生的二次辐射、缺陷、电离中心等等对二维材料异质结电阻及光电响应的影响，提高器件的可靠性。
对上述实施方式进行改进得到本实施方式，在本实施方式中，光电探测器由多个光电探测结构叠加而成，前一光电探测结构中的电极层与后一光电探测结构中的光电探测层通过一绝缘层连接，各光电探测结构中的光电探测层之间通过一空气层隔离。
在本实施方式中，光电探测器中包括多层光电探测层，且各光电探测层之间通过空气层隔离。由于辐射粒子同时与多个光电探测层反应产生赝信号的几率很小，以此减小或排除由于辐射所导致的赝信号。
在一实例中，如图3所示，在该光电探测器中包括两个光电探测结构，即包括第一光电探测层11和第二光电探测层9，还包括第一电极2、第二电极4、第三电极10、基地层3、第一空气层7、第二空气层8以及绝缘层6，其中，第一光电探测层和第二电极4之间通过绝缘层6连接，且第一光电探测层11和第二光电探测层9之间通过第二空气层8隔离，第一光电探测层11与基底层3之间通过第一空气层7隔离。
对上述实施方式进行改进得到本实施方式，在本实施方式中，光电探测器中还包括一密闭抗辐射容器，各光电探测结构置于密闭抗辐射容器中，其中，抗辐射容器用以降低探测器的照射剂量，真空环境用以减小辐射粒子与空气反应所产生的二次辐射对探测器的影响。
在一实例中，如图4所示，在该光电探测器中，光电探测器中包括两个光电探测结构，即包括第一光电探测层11和第二光电探测层9，还包括第一电极2、第二电极4、第三电极10、基地层3、第一空气层7、第二空气层8以及绝缘层6，其中，第一光电探测层和第二电极4之间通过绝缘层6连接，且第一光电探测层11和第二光电探测层9之间通过第二空气层8隔离，第一光电探测层11与基底层3之间通过第一空气层7隔离。此外，在该光电探测器中还包括一抗辐射容器12，且将该光电探测器置于该抗辐射容器中。
应当说明的是，上述实施例均可根据需要自由组合。以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (6)

1.一种光电探测器，其特征在于，所述光电探测器中包括：光电探测层和第一电极层，所述第一电极层设置于所述光电探测层一侧表面，得到光电探测结构；
所述光电探测层由二维材料或二维材料异质结构制备而成。
2.如权利要求1所述的光电探测器，其特征在于，所述二维材料为石墨烯或二硫化钼或二硫化钨。
3.如权利要求1所述的光电探测器，其特征在于，所述二维材料异质结构为石墨烯-二硫化钼，或石墨烯-二硫化钨，或二硫化钼-二硫化钨。
4.如权利要求1或2或3所述的光电探测器，其特征在于，所述光电探测器中还包括一基底层和第二电极，所述基底层与光电探测层之间通过空气层隔离，所述第一电极于所述空气层四周位于所述基底层和光电探测层之间。
5.如权利要求1或2或3所述的光电探测器，其特征在于，所述光电探测器由多个光电探测结构叠加而成，前一光电探测结构中的电极层与后一光电探测结构中的光电探测层通过一绝缘层连接，各光电探测结构中的光电探测层之间通过一空气层隔离。
6.如权利要求5所述的光电探测器，其特征在于，所述光电探测器中还包括一密闭抗辐射容器，各光电探测结构置于所述密闭抗辐射容器中。
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